WO2010106541A1 - Method for the preparation of boron nitride powder - Google Patents
Method for the preparation of boron nitride powder Download PDFInfo
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- WO2010106541A1 WO2010106541A1 PCT/IL2010/000220 IL2010000220W WO2010106541A1 WO 2010106541 A1 WO2010106541 A1 WO 2010106541A1 IL 2010000220 W IL2010000220 W IL 2010000220W WO 2010106541 A1 WO2010106541 A1 WO 2010106541A1
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- process according
- boric acid
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- 238000000034 method Methods 0.000 title claims abstract description 40
- 239000000843 powder Substances 0.000 title claims abstract description 35
- 229910052582 BN Inorganic materials 0.000 title claims abstract description 27
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 title claims abstract description 27
- 238000002360 preparation method Methods 0.000 title claims abstract description 8
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 claims abstract description 54
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 claims abstract description 48
- 239000004327 boric acid Substances 0.000 claims abstract description 42
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 35
- 235000013877 carbamide Nutrition 0.000 claims abstract description 25
- 239000004202 carbamide Substances 0.000 claims abstract description 24
- 238000010438 heat treatment Methods 0.000 claims abstract description 24
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims abstract description 14
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 14
- -1 boron imide Chemical class 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims abstract description 11
- 239000000203 mixture Substances 0.000 claims abstract description 11
- 229910052796 boron Inorganic materials 0.000 claims abstract description 10
- 238000002156 mixing Methods 0.000 claims abstract description 5
- 238000006243 chemical reaction Methods 0.000 claims description 26
- 239000000376 reactant Substances 0.000 claims description 20
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 15
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims description 14
- 238000005406 washing Methods 0.000 claims description 10
- 229910052757 nitrogen Inorganic materials 0.000 claims description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 7
- 239000002245 particle Substances 0.000 claims description 5
- 239000012298 atmosphere Substances 0.000 claims description 4
- AUTNMGCKBXKHNV-UHFFFAOYSA-P diazanium;3,7-dioxido-2,4,6,8,9-pentaoxa-1,3,5,7-tetraborabicyclo[3.3.1]nonane Chemical compound [NH4+].[NH4+].O1B([O-])OB2OB([O-])OB1O2 AUTNMGCKBXKHNV-UHFFFAOYSA-P 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims description 4
- 229910003544 H2B4O7 Inorganic materials 0.000 claims description 2
- 239000000356 contaminant Substances 0.000 claims description 2
- 238000011109 contamination Methods 0.000 abstract description 2
- 238000004458 analytical method Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 229910003460 diamond Inorganic materials 0.000 description 4
- 239000010432 diamond Substances 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000012299 nitrogen atmosphere Substances 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000634 powder X-ray diffraction Methods 0.000 description 2
- 238000002411 thermogravimetry Methods 0.000 description 2
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical class C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001642 boronic acid derivatives Chemical class 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 229910003472 fullerene Inorganic materials 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 150000003672 ureas Chemical class 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/064—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with boron
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/064—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with boron
- C01B21/0646—Preparation by pyrolysis of boron and nitrogen containing compounds
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/02—Amorphous compounds
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
- C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
- C01P2002/76—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by a space-group or by other symmetry indications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/01—Particle morphology depicted by an image
- C01P2004/03—Particle morphology depicted by an image obtained by SEM
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/11—Powder tap density
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/12—Surface area
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/80—Compositional purity
Definitions
- This invention is directed to a process for the preparation of boron nitride powder, particularly a fine powder with a low degree of contamination, which demonstrates good caking, heat conductivity and dielectric properties.
- Ceramic materials such as boron nitride (BN) have useful properties including high melting temperature, low density, high strength, stiffness, hardness, wear resistance, and corrosion resistance. Many ceramics are good electrical and thermal insulators. [003] For most applications using ceramics, a fine powder with small particle sizes, as small as nano-sized particles, is required. Small particle-size powders are not easily obtained by current methodology and usually require additional grinding and cleaning operations.
- Boron nitride (BN) is a white powder with high chemical and thermal stability and high electrical resistance. Boron nitride possesses three polymorphic forms; one analogous to diamond, one analogous to graphite and one analogous to fullerenes.
- Boron nitride can be used to make crystals that are extremely hard, second in hardness only to diamond, and the similarity of this compound to diamond extends to other applications. Like diamond, boron nitride acts as an electrical insulator and is an excellent conductor of heat. [005] Boron nitride, like graphite, has the ability to lubricate, in both extreme cold and hot conditions, is suited for extreme pressure applications, is environmentally friendly and is inert to most chemicals powders.
- BN is used in electronics, e.g. as a substrate for semiconductors, microwave-transparent windows, structural material for seals, electrodes as well as catalyst carriers in fuel cells and batteries.
- BN can be prepared as amorphous BN (a-BN), hexagonal BN (h-BN), turbostratic BN (t-BN) and cubic BN (c-BN).
- a-BN is prepared at relatively low temperatures, while both h-BN and t-BN are prepared at higher temperatures.
- c-BN may be prepared by high pressure and high temperature treatment of h-BN.
- US 6306358 discloses a method for preparing a-BN powder at temperature below 1000 0 C, mostly in the range of 850-950 0 C.
- boric anhydride B 2 O 3
- the yield of the process is relatively low.
- This invention is directed to a process for the preparation of amorphous boron nitride (a-BN) comprising:
- step (a) Mixing powders of boric acid and a carbamide at a temperature in the range of about 250-300 0 C, thereby forming: ammonium polyborates; boron imide or a mixture thereof and ammonia; and b. heating of the materials formed in step (a) to a temperature in the range of about
- Fig. Ia shows a-BN powder
- Fig. Ib shows an example of an X-ray powder diffraction diagram of a-BN according to an embodiment of the invention
- Fig. 2 shows an example of an X-ray powder diffraction diagram of h-BN/t-
- Figs. 3a-b represents EM photomicrographs showing h-BN/t-BN powder, showing the high degree of purity thereof;
- Figs. 4a-b shows tables describing physical and chemical properties of the h-
- Fig. 5 shows calorimetric analysis of the process according to an embodiment of the invention. DETAILED DESCRIPTION OF THE INVENTION
- This invention provides a process for the preparation of ceramic powders of
- the prepared BN is amorphous BN, i.e., a-BN.
- the a-BN is prepared according to this invention by the following steps: mixing powders of boric acid and a nitrogen comprising compound at a temperature in the range of about 250-300 0 C, thereby forming: ammonium polyborates ((NH 4 ) X B y O 2 ); boron imide, or a mixture thereof and ammonia; andheating of the ammonium polyborates and the boron imide formed to a temperature in the range of about 500-600 0 C, thereby forming a powder of a-BN.
- a compound containing nitrogen may be for example, ammonia, ammonium and carbamides, including urea.
- the a-BN is prepared according to an embodiment of this invention by the following steps: mixing powders of boric acid and a carbamide, such as urea ((NH 2 ⁇ CO, at a temperature in the range of about 250-300 0 C, thereby forming: ammonium polyborates
- FIG. 1 shows the a-BN provided by the process of this invention and Figure Ib shows the XRD diagram of the prepared a-BN.
- the ammonium polyborates react with the ammonia when heated to about 500-600 0 C thereby forming a-BN. Further, according to this invention heating the boron imide to about 500-600 0 C provides a-BN.
- the second step of the above process is performed when about less than 50% of the initial weight of the boric acid reactant remains in the reaction vessel. According to another embodiment the second step of the above process is performed when about 55-75% of the initial weight of the boric acid reactant remains in the reaction vessel. According to a further embodiment of the invention, the second step is performed when about 60-65% of the initial weight of the boric acid reactant remains.
- the second step is performed when about 70% of the initial weight of the boric acid reactant remains in the reaction vessel. According to a further embodiment of the invention, the second step is performed when about 40-50% of the initial weight of the boric acid reactant remains in the reaction vessel. According to a further embodiment of the invention, the second step is performed when about 30-40% of the initial weight of the boric acid reactant remains in the reaction vessel. According to a further embodiment of the invention, the second step is performed when about 20-30% of the initial weight of the boric acid reactant remains in the reaction vessel. According to a further embodiment of the invention, the second step is performed when about 10-20% of the initial weight of the boric acid reactant remains in the reaction vessel.
- the boric acid is selected from H 3 BO 3, H 2 B 4 O 7 or HBO 2 .
- salts of boric acid may be used instead of the boric acid.
- the chemical formula of the ammonium polyborates is (NFL t ) x ByO z , wherein x is between 1-4, y is between 1-10 and z is between 2-17.
- the ammonium polyborates may, for example, without being limited, (NH 4 ) 2 B 4 O 7 , NH 4 B 5 O 8 or (NH 4 ) 4 B I0 Oi 7 .
- any of the polyborates may be hydrated.
- the ammonium polyborate formed may be ammonium tetraborate.
- the chemical reactions that may take place in the reaction vessel in the first step of the above process are:
- part of the urea in the reaction vessel reacts with the water produced in the above reactions thereby forming ammonia according to the following reaction:
- the boron imide produced in the first step breaks down, upon heating to 500-600 0 C, to a-BN and ammonia according to the following reaction:
- the w/w ratio of the carbamide and the boric acid reactants is from about 3:4 to 2:1. According to a further embodiment of the invention, the w/w ratio of the carbamide and the boric acid is about between 1.0-1.5:1.0. According to a further embodiment of the invention, the ratio of the carbamide and the boric acid is about 3.75:4. According to a further embodiment of the invention, the ratio of the carbamide and the boric acid is about 3.5:4. According to a further embodiment of the invention, the ratio of the carbamide and the boric acid is about 3.25:4. According to a further embodiment of the invention, the ratio of the carbamide and the boric acid is about 2.75:4.
- the ratio of the carbamide and the boric acid is about 2.5:4. According to a further embodiment of the invention, the ratio of the carbamide and the boric acid is about 2.25:4. According to a further embodiment of the invention, the ratio of the carbamide and the boric acid is about 1:2.
- the process of this invention may further comprises heating the a-BN to a temperature between about 1200-1800 0 C under an atmosphere of nitrogen, ammonia, or both a mixture thereof, so as to provide h-BN and/or t-BN. According to one embodiment of this invention, the heating of the a-BN is performed when about 40-45% of the initial weight of the boric acid reactant remains.
- the heating of the a-BN is performed when about 35-40% of the initial weight of the boric acid reactant remains. According to one embodiment of this invention, the heating of the a-BN is performed when about 30-35% of the initial weight of the boric acid reactant remains. According to one embodiment of this invention, the heating of the a-BN is performed when about 25-30% of the initial weight of the boric acid reactant remains. According to one embodiment of this invention, the heating of the a-BN is performed when about 20-25% of the initial weight of the boric acid reactant remains. According to one embodiment of this invention, the heating of the a-BN is performed when about 15-20% of the initial weight of the boric acid reactant remains.
- the heating of the a-BN is performed when about 10-15% of the initial weight of the boric acid reactant remains.
- lower range temperatures i.e., about 1200-1400 0 C the percentage of t-BN rises, while higher temperatures, i.e., about 1400- 1800 0 C result in lower amounts of t-BN and higher amounts of h-BN.
- Figure 2 shows the XRD pattern obtained from the h-BN/t-BN powder prepared according to this invention at 1500 0 C.
- the a-BN is ground to particles smaller than about 2-3 micron, before heating to about 1200 0 C -1800 0 C to prepare the h-BN/t-BN.
- the t-BN/h-BN powder is cleaned from remaining boric acid, boric anhydride, or any other contaminants, by washing with hot water in temperature that is higher than about 7O 0 C and/or alcohol. Since the alcohol is capable of providing cleaner material, when highly pure material is desired, according to this invention, the t-BN/h-BN is washed first with water and then with alcohol. According to a further embodiment, the washing with hot water is performed until the remaining amount of boric anhydride in the reaction vessel is less than about 0.5% w/w.
- the washing with hot water is performed until the remaining amount of boric anhydride in the reaction vessel is less than about 1-2% w/w. According to a further embodiment, the washing with hot water is performed until the remaining amount of boric anhydride in the reaction vessel is less than about 2-3% w/w. According to a further embodiment, the washing with hot water is performed until the remaining amount of boric anhydride in the reaction vessel is less than about 3-4% w/w. According to a further embodiment, the washing with hot water is performed until the remaining amount of boric anhydride in the reaction vessel is less than about 4-5% w/w. According to a further embodiment, the washing with alcohol is performed until the remaining amount of boric anhydride is less than about 0.1% w/w.
- the water used to wash the product materials is distilled or demineralized water, wherein the concentration of the h- BN/t-BN powder in the water is less than about 2-5%.
- the powder is separated from the water by centrifuge.
- the h-BN/t-BN materials are washed there may still be up to 1% residual oxygen (not from boric anhydride) that probably results from free orbitals on the surface of the h-BN/tBN material that react with the oxygen in the air.
- a light gas such as hydrogen or helium
- a heavier gas such as argon or nitrogen
- the h-BN/t-BN products contain up to about 2% impurities. According to another embodiment of this invention, the h-BN/t-BN product contains up to about 1% impurities. According to yet another embodiment of this invention, the h-BN/t-BN product contains up to about 0.5% impurities. According to yet another embodiment of this invention, the amount of impurities found in the h-BN/t-BN product is less than 0.5%.
- Figure 3 a shows an electron microscope picture of the h-BN/t-BN powder prepared according of this invention, demonstrating the high degree of purity of the product.
- Figure 3b shows additional electron microscope pictures of the h-BN/t-BN powder prepared according to this invention.
- h-BN/t-BN powder prepared according to this invention indicates the following composition: carbon 0.053%, oxygen 0.608%, nitrogen 55.8%, calcium 280 ppm, silicon 100 ppm and sol. Borates 0.133% mean particle size of 5.5 ⁇ m.
- BN prepared according to this invention are provided in Figures 4a and 4b.
- the time of endurance for preparing the t-BN is 1.5-3 hours at a temperature of 1200-1500 0 C.
- the time of endurance for preparing the h-BN is 3 hours at a temperature of 1500-1800 0 C.
- 300 g H 3 BO 3 are mixed with 600 g (NHj) 2 CO at 25O 0 C for 2 hours and then heated to 500 0 C for 0.25 hour for obtaining 120 gr of a-BN.
- the reaction vessel is then heated to a temperature of 1200 0 C for 3 hours in a nitrogen atmosphere for obtaining 84.6 gr t-BN.
- 300 g H 3 BO 3 are mixed with 600 g (NH 2 ) 2 CO at 25O 0 C for 2 hours and then heated to 600 0 C for 0.5 hour for obtaining 130 gr of a-BN. The reaction vessel is then heated to a temperature of 1500 0 C for 2 hours under an atmosphere of nitrogen for obtaining 104.5 gr t-BN.
- 600 g (NH 2 ) 2 CO at 25O 0 C for 2 hours and then heated to 600 0 C for 0.5 hour for obtaining 130 gr of a-BN.
- the reaction vessel is then heated to a temperature of 1500 0 C for 2 hours under an atmosphere of nitrogen for obtaining 104.5 gr t-BN.
- 300 g H 3 BO 3 are mixed with 600 g (NH 2 ) 2 CO at 25O 0 C for 2 hours and then heated to 600 0 C for 0.5 hour for obtaining 135 gr of a-BN. The reaction vessel is then heated to a temperature of 1500 0 C for 5 hours in a nitrogen atmosphere for obtaining 101.2 gr h- BN.
- 300 g H 3 BO 3 are mixed with 600 g (NH 2 ) 2 CO at 25O 0 C for 2 hours and then heated to 600 0 C for 1.0 hour for obtaining 132 gr of a-BN. The reaction vessel is then heated to a temperature of 1800 0 C for 3 hours in a nitrogen atmosphere for obtaining 88.6 gr h-BN.
- 600 g (NH 2 ) 2 CO at 25O 0 C for 2 hours and then heated to 600 0 C for 1.0 hour for obtaining 132 gr of a-BN.
- the reaction vessel is then heated to a temperature of 1800 0 C for 3 hours in a nitrogen atmosphere for obtaining 88.6 gr h-BN.
- thermogravimetric analysis 25.5600 mg of a mixture of urea and boric acid taken as a ratio of 2:1 was used. Heating was conducted from 25 0 C to 1000 0 C at a rate 1O 0 C per minute in a nitrogen atmosphere (200 ml per minute). The results indicate that heating above 600 0 C for production of the amorphous BN is not effective.
- calorimetric analysis 6.2900 mg of a mixture of urea / boric acid, taken as a ratio of 2:1 was used.
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Abstract
This invention is directed to a process for the preparation of boron nitride powder, particularly a fine powder with a low degree of contamination, which demonstrates good caking, heat conductivity and dielectric properties. Specifically, a process for the preparation of amorphous boron nitride (a-BN) is provided wherein the process comprises: mixing powders of boric acid and a carbamide at a temperature in the range of about 250-300°C, thereby forming: ammonium polyborates; boron imide or a mixture thereof and ammonia; and heating of the materials formed in step (a) to a temperature in the range of about 500-600°C, thereby forming a powder of a-BN.
Description
METHOD FOR THE PREPARATION OF BORON NITRIDE POWDER
FIELD OF THE INVENTION
[001] This invention is directed to a process for the preparation of boron nitride powder, particularly a fine powder with a low degree of contamination, which demonstrates good caking, heat conductivity and dielectric properties.
BACKGROUND OF THE INVENTION
[002] Ceramic materials, such as boron nitride (BN), have useful properties including high melting temperature, low density, high strength, stiffness, hardness, wear resistance, and corrosion resistance. Many ceramics are good electrical and thermal insulators. [003] For most applications using ceramics, a fine powder with small particle sizes, as small as nano-sized particles, is required. Small particle-size powders are not easily obtained by current methodology and usually require additional grinding and cleaning operations. [004] Boron nitride (BN) is a white powder with high chemical and thermal stability and high electrical resistance. Boron nitride possesses three polymorphic forms; one analogous to diamond, one analogous to graphite and one analogous to fullerenes. Boron nitride can be used to make crystals that are extremely hard, second in hardness only to diamond, and the similarity of this compound to diamond extends to other applications. Like diamond, boron nitride acts as an electrical insulator and is an excellent conductor of heat. [005] Boron nitride, like graphite, has the ability to lubricate, in both extreme cold and hot conditions, is suited for extreme pressure applications, is environmentally friendly and is inert to most chemicals powders.
[006] Due to its excellent dielectric and insulating properties, BN is used in electronics, e.g. as a substrate for semiconductors, microwave-transparent windows, structural material for seals, electrodes as well as catalyst carriers in fuel cells and batteries. [007] BN can be prepared as amorphous BN (a-BN), hexagonal BN (h-BN), turbostratic BN (t-BN) and cubic BN (c-BN). Generally, a-BN is prepared at relatively low temperatures, while both h-BN and t-BN are prepared at higher temperatures. c-BN may be prepared by high pressure and high temperature treatment of h-BN. [008] There are several known processes in the art for preparing BN powders, such as those presented in US 6306358. However, the methods known in the art are generally
inefficient, and tend to produce powders that need to be cleaned and/or ground before used. US 6306358, for example, discloses a method for preparing a-BN powder at temperature below 10000C, mostly in the range of 850-9500C. However, since boric anhydride (B2O3), which is one of the reactants in the process, evaporates at such high temperatures, the yield of the process is relatively low.
[009] Therefore, there is a need in the art for a process for preparing various forms of BN, which would be efficient, and would provide pure powders.
SUMMARY OF THE INVENTION
[0010] This invention is directed to a process for the preparation of amorphous boron nitride (a-BN) comprising:
a. Mixing powders of boric acid and a carbamide at a temperature in the range of about 250-3000C, thereby forming: ammonium polyborates; boron imide or a mixture thereof and ammonia; and b. heating of the materials formed in step (a) to a temperature in the range of about
500-6000C, thereby forming a powder of a-BN.
BRIEF DESCRIPTION OF THE DRAWINGS
[0011] Fig. Ia shows a-BN powder;
[0012] Fig. Ib shows an example of an X-ray powder diffraction diagram of a-BN according to an embodiment of the invention;
[0013] Fig. 2: shows an example of an X-ray powder diffraction diagram of h-BN/t-
BN XRD diagram;
[0014] Figs. 3a-b: represents EM photomicrographs showing h-BN/t-BN powder, showing the high degree of purity thereof; [0015] Figs. 4a-b shows tables describing physical and chemical properties of the h-
BN/t-BN powder.
[0016] Fig. 5 shows calorimetric analysis of the process according to an embodiment of the invention.
DETAILED DESCRIPTION OF THE INVENTION
[0017] In the following detailed description, numerous specific details are set forth in order to provide a thorough understanding of the invention. However, it will be understood by those skilled in the art that the present invention may be practiced without these specific details. In other instances, well-known methods, procedures, and components have not been described in detail so as not to obscure the present invention.
[0018] This invention provides a process for the preparation of ceramic powders of
BN. In one embodiment of this invention, the prepared BN is amorphous BN, i.e., a-BN. [0019] The a-BN is prepared according to this invention by the following steps: mixing powders of boric acid and a nitrogen comprising compound at a temperature in the range of about 250-3000C, thereby forming: ammonium polyborates ((NH4)XByO2); boron imide, or a mixture thereof and ammonia; andheating of the ammonium polyborates and the boron imide formed to a temperature in the range of about 500-6000C, thereby forming a powder of a-BN. By "about" it is meant plus or minus 30%, 20% , 10% or 5%. [0020] A compound containing nitrogen may be for example, ammonia, ammonium and carbamides, including urea.
[0021 ] The a-BN is prepared according to an embodiment of this invention by the following steps: mixing powders of boric acid and a carbamide, such as urea ((NH2^CO, at a temperature in the range of about 250-3000C, thereby forming: ammonium polyborates
((NH4)XByO2); boron imide, or a mixture thereof and ammonia; and subsequent heating of the ammonium polyborates and the boron imide formed to a temperature in the range of about 500-6000C, thereby forming a powder of a-BN. [0022] Figure Ia shows the a-BN provided by the process of this invention and Figure Ib shows the XRD diagram of the prepared a-BN.
[0023] According to this invention, the ammonium polyborates react with the ammonia when heated to about 500-6000C thereby forming a-BN. Further, according to this invention heating the boron imide to about 500-6000C provides a-BN. [0024] According to this invention, the second step of the above process is performed when about less than 50% of the initial weight of the boric acid reactant remains in the reaction vessel. According to another embodiment the second step of the above process is performed when about 55-75% of the initial weight of the boric acid reactant remains in the reaction
vessel. According to a further embodiment of the invention, the second step is performed when about 60-65% of the initial weight of the boric acid reactant remains. According to a further embodiment of the invention, the second step is performed when about 70% of the initial weight of the boric acid reactant remains in the reaction vessel. According to a further embodiment of the invention, the second step is performed when about 40-50% of the initial weight of the boric acid reactant remains in the reaction vessel. According to a further embodiment of the invention, the second step is performed when about 30-40% of the initial weight of the boric acid reactant remains in the reaction vessel. According to a further embodiment of the invention, the second step is performed when about 20-30% of the initial weight of the boric acid reactant remains in the reaction vessel. According to a further embodiment of the invention, the second step is performed when about 10-20% of the initial weight of the boric acid reactant remains in the reaction vessel. The term "about" is used herein to mean ±10%. [0025] In one embodiment of this invention, the boric acid is selected from H3BO3, H2B4O7 or HBO2. In another embodiment of the invention, salts of boric acid may be used instead of the boric acid.
[0026] According to an embodiment of the invention, the chemical formula of the ammonium polyborates is (NFLt)xByOz, wherein x is between 1-4, y is between 1-10 and z is between 2-17. The ammonium polyborates may, for example, without being limited, (NH4)2B4O7, NH4B5O8 or (NH4)4B I0Oi7. According to an embodiment of the invention, any of the polyborates may be hydrated. According to an embodiment of this invention, when the carbamide reactant is urea, the ammonium polyborate formed may be ammonium tetraborate. According to this embodiment, the chemical reactions that may take place in the reaction vessel in the first step of the above process are:
4H3BO3+(NH2)2CO ^ (NH4)2B4O7+CO2+4H2O 4H3BO3+3(NH2)2CO <→ 2B2(NH)3+3CO2+9H2O 2H3BO3 ^ B2O3+3H2O
[0027] Additionally, part of the urea in the reaction vessel reacts with the water produced in the above reactions thereby forming ammonia according to the following reaction:
(NH2)2CO+H2O *→ 2NH3+CO2
[0028] Then, in the second step, upon heating to about 500-6000C, the ammonium tetraborate reacts with ammonia, thereby forming a-BN, according to the following reaction:
(NH4)ZB4O^NH3 → 4a-BN+7H2O
[0029] Further, the boron imide produced in the first step breaks down, upon heating to 500-6000C, to a-BN and ammonia according to the following reaction:
B2(NH)3 → 2a-BN+NH3
thus providing a-BN and additional ammonia that may react with ammonium tetraborate for the formation of further a-BN.
[0030] According to an embodiment of the invention, the w/w ratio of the carbamide and the boric acid reactants is from about 3:4 to 2:1. According to a further embodiment of the invention, the w/w ratio of the carbamide and the boric acid is about between 1.0-1.5:1.0. According to a further embodiment of the invention, the ratio of the carbamide and the boric acid is about 3.75:4. According to a further embodiment of the invention, the ratio of the carbamide and the boric acid is about 3.5:4. According to a further embodiment of the invention, the ratio of the carbamide and the boric acid is about 3.25:4. According to a further embodiment of the invention, the ratio of the carbamide and the boric acid is about 2.75:4. According to a further embodiment of the invention, the ratio of the carbamide and the boric acid is about 2.5:4. According to a further embodiment of the invention, the ratio of the carbamide and the boric acid is about 2.25:4. According to a further embodiment of the invention, the ratio of the carbamide and the boric acid is about 1:2. [0031] According to an embodiment of this invention, the process of this invention may further comprises heating the a-BN to a temperature between about 1200-18000C under an atmosphere of nitrogen, ammonia, or both a mixture thereof, so as to provide h-BN and/or t-BN. According to one embodiment of this invention, the heating of the a-BN is performed when about 40-45% of the initial weight of the boric acid reactant remains. According to one embodiment of this invention, the heating of the a-BN is performed when about 35-40% of the initial weight of the boric acid reactant remains. According to one embodiment of this invention, the heating of the a-BN is performed when about 30-35% of
the initial weight of the boric acid reactant remains. According to one embodiment of this invention, the heating of the a-BN is performed when about 25-30% of the initial weight of the boric acid reactant remains. According to one embodiment of this invention, the heating of the a-BN is performed when about 20-25% of the initial weight of the boric acid reactant remains. According to one embodiment of this invention, the heating of the a-BN is performed when about 15-20% of the initial weight of the boric acid reactant remains. According to one embodiment of this invention, the heating of the a-BN is performed when about 10-15% of the initial weight of the boric acid reactant remains. [0032] According to this invention, when lower range temperatures are used, i.e., about 1200-14000C the percentage of t-BN rises, while higher temperatures, i.e., about 1400- 18000C result in lower amounts of t-BN and higher amounts of h-BN. Figure 2 shows the XRD pattern obtained from the h-BN/t-BN powder prepared according to this invention at 15000C. [0033] According to an embodiment of this invention, the a-BN is ground to particles smaller than about 2-3 micron, before heating to about 12000C -18000C to prepare the h-BN/t-BN.
[0034] Once the h-BN/t-BN is prepared, according to an embodiment of the invention, the t-BN/h-BN powder is cleaned from remaining boric acid, boric anhydride, or any other contaminants, by washing with hot water in temperature that is higher than about 7O0C and/or alcohol. Since the alcohol is capable of providing cleaner material, when highly pure material is desired, according to this invention, the t-BN/h-BN is washed first with water and then with alcohol. According to a further embodiment, the washing with hot water is performed until the remaining amount of boric anhydride in the reaction vessel is less than about 0.5% w/w. According to a further embodiment, the washing with hot water is performed until the remaining amount of boric anhydride in the reaction vessel is less than about 1-2% w/w. According to a further embodiment, the washing with hot water is performed until the remaining amount of boric anhydride in the reaction vessel is less than about 2-3% w/w. According to a further embodiment, the washing with hot water is performed until the remaining amount of boric anhydride in the reaction vessel is less than about 3-4% w/w. According to a further embodiment, the washing with hot water is performed until the remaining amount of boric anhydride in the reaction vessel is less than
about 4-5% w/w. According to a further embodiment, the washing with alcohol is performed until the remaining amount of boric anhydride is less than about 0.1% w/w. [0035] According to an embodiment of the invention, the water used to wash the product materials is distilled or demineralized water, wherein the concentration of the h- BN/t-BN powder in the water is less than about 2-5%. According to another embodiment, the powder is separated from the water by centrifuge.
[0036] Once the h-BN/t-BN materials are washed there may still be up to 1% residual oxygen (not from boric anhydride) that probably results from free orbitals on the surface of the h-BN/tBN material that react with the oxygen in the air. Thus, according to a further embodiment of this invention, after the h-BN/t-BN material is washed with water and/or alcohol, it is heated to about 3000C under a light gas, such as hydrogen or helium, thereby causing the oxygen to leave the surface. Then, under hermitic conditions, a heavier gas, such as argon or nitrogen, is streamed over the h-BN/t-BN material. [0037] According to this invention, the h-BN/t-BN products contain up to about 2% impurities. According to another embodiment of this invention, the h-BN/t-BN product contains up to about 1% impurities. According to yet another embodiment of this invention, the h-BN/t-BN product contains up to about 0.5% impurities. According to yet another embodiment of this invention, the amount of impurities found in the h-BN/t-BN product is less than 0.5%. [0038] Figure 3 a shows an electron microscope picture of the h-BN/t-BN powder prepared according of this invention, demonstrating the high degree of purity of the product. Figure 3b shows additional electron microscope pictures of the h-BN/t-BN powder prepared according to this invention. An analysis of the h-BN/t-BN powder prepared according to this invention indicates the following composition: carbon 0.053%, oxygen 0.608%, nitrogen 55.8%, calcium 280 ppm, silicon 100 ppm and sol. Borates 0.133% mean particle size of 5.5 μm.
[0039] The physical and chemical properties of two different batches of the h-BN/t-
BN prepared according to this invention are provided in Figures 4a and 4b. The time of endurance for preparing the t-BN is 1.5-3 hours at a temperature of 1200-15000C. The time of endurance for preparing the h-BN is 3 hours at a temperature of 1500-18000C.
[0040] Various aspects of the invention are described in greater detail in the following Examples, which represent embodiments of this invention, and are by no means to be interpreted as limiting the scope of this invention.
EXAMPLES
Example 1
[0041] 300 g H3BO3 are mixed with 600 g (NHj)2CO at 25O0C for 2 hours and then heated to 5000C for 0.25 hour for obtaining 120 gr of a-BN. The reaction vessel is then heated to a temperature of 12000C for 3 hours in a nitrogen atmosphere for obtaining 84.6 gr t-BN.
Example 2
[0042] 300 g H3BO3 are mixed with 600 g (NH2)2CO at 25O0C for 2 hours and then heated to 6000C for 0.5 hour for obtaining 130 gr of a-BN. The reaction vessel is then heated to a temperature of 15000C for 2 hours under an atmosphere of nitrogen for obtaining 104.5 gr t-BN. Example 3
[0043] 300 g H3BO3 are mixed with 600 g (NH2)2CO at 25O0C for 2 hours and then heated to 6000C for 0.5 hour for obtaining 135 gr of a-BN. The reaction vessel is then heated to a temperature of 15000C for 5 hours in a nitrogen atmosphere for obtaining 101.2 gr h- BN.
Example 4
[0044] 300 g H3BO3 are mixed with 600 g (NH2)2CO at 25O0C for 2 hours and then heated to 6000C for 1.0 hour for obtaining 132 gr of a-BN. The reaction vessel is then heated to a temperature of 18000C for 3 hours in a nitrogen atmosphere for obtaining 88.6 gr h-BN. Example 5
[0045] To simulate the process, we conducted a thermogravimetric analysis using
TG-50 and a calorimetric analysis using DSC-823E. Both Analyzers of the company Mettler Toledo, USA. [0046] For the thermogravimetric analysis 25.5600 mg of a mixture of urea and boric acid taken as a ratio of 2:1 was used. Heating was conducted from 250C to 10000C at a rate 1O0C per minute in a nitrogen atmosphere (200 ml per minute). The results indicate that heating above 6000C for production of the amorphous BN is not effective.
[0047] For the calorimetric analysis 6.2900 mg of a mixture of urea / boric acid, taken as a ratio of 2:1 was used. Analysis was conducted in an atmosphere of nitrogen (80 ml per minute) in the temperature range from 300C to 6000C at a heating rate 10°C/min. The results are shown in Figure 5. [0048] While certain features of the invention have been illustrated and described herein, many modifications, substitutions, changes, and equivalents will now occur to those of ordinary skill in the art. It is, therefore, to be understood that the appended claims are intended to cover all such modifications and changes as fall within the true spirit of the invention.
Claims
What is claimed is: 1. A process for the preparation of amorphous boron nitride (a-BN) comprising: a. mixing powders of boric acid and a carbamide at a temperature in the range of about 250-3000C, thereby forming: ammonium polyborates; boron imide or a mixture thereof and ammonia; and b. heating of the materials formed in step (a) to a temperature in the range of about 500-6000C, thereby forming a powder of a-BN.
2. The process according to claim 1, wherein the ammonium polyborates reacts with the ammonia when heated to about 500-6000C thereby forming a-BN.
3. The process according to claim 1, wherein heating the boron imide to about 500-6000C provides a-BN.
4. The process according to claim 1, wherein the carbamide is urea.
5. The process according to claim 1, wherein step (b) is performed when about 55-75% of the initial weight of the boric acid remains in the reaction vessel.
6. The process according to claim 1, wherein step (b) is performed when about 60-65% of the initial weight of the boric acid remains in the reaction vessel.
7. The process according to claim 1 , wherein the boric acid is H3BO3, H2B4O7 or HBO2.
8. The process according to claim 1, wherein the ammonium polyborate formed consists essentially from ammonium tetraborate.
9. The process according to claim 1, wherein the w/w ratio of the carbamide and the boric acid reactants is from about 3:4 to 2: 1.
10. The process according to claim 1, wherein the w/w ratio of the carbamide and the boric acid reactants is about between 1.0-1.5:1.0.
11. The process according to claim 1 , further comprising heating the a-BN to a temperature between about 1200-18000C under an atmosphere of nitrogen, ammonia, or a mixture thereof, thereby providing h-BN, t-BN, or a combination of h-BN and t-BN.
12. The process according to claim 11, wherein said a-BN is ground to particles smaller than about 2-3 micron prior to heating the a-BN.
13. The process according to claim 11, wherein the further heating of the a-BN is performed when about 40-45% of the initial weight of the boric acid remains in the reaction vessel.
14. The process according to claim 11, wherein remaining boric acid, boric anhydride and other contaminants are removed from the t-BN and the h-BN by washing with water, alcohol, or a mixture thereof.
15. The process according to claim 14, wherein the washing with water is performed until the remaining amount of boric anhydride is less than about 0.5% w/w.
16. The process according to claim 14, wherein the washing with alcohol is performed until when the remaining amount of boric anhydride is less than about 0.1% w/w.
17. The process according to claim 13, further comprising heating the h-BN and t-BN to about 3000C under a light gas; and streaming a heavy gas over the h-BN and t-BN under hermitic conditions.
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JP2012500367A JP2012520823A (en) | 2009-03-19 | 2010-03-17 | Method for the preparation of boron nitride powder |
US13/535,376 US20130011317A1 (en) | 2009-03-19 | 2012-06-28 | Method for the preparation of boron nitride powder |
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KR101805541B1 (en) * | 2011-06-24 | 2017-12-08 | 삼성에스디아이 주식회사 | Composite cathode active material, cathode and lithium battery comprising the material, and preparation method thereof |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4764489A (en) * | 1987-12-10 | 1988-08-16 | E. I. Du Pont De Nemours And Company | Preparation of mixed boron and aluminum nitrides |
US6348179B1 (en) * | 1999-05-19 | 2002-02-19 | University Of New Mexico | Spherical boron nitride process, system and product of manufacture |
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JPH01203205A (en) * | 1988-02-08 | 1989-08-16 | Asahi Chem Ind Co Ltd | Production of boron nitride powder |
JPH07172806A (en) * | 1993-12-17 | 1995-07-11 | Kawasaki Steel Corp | Production of amorphous boron nitride powder |
JP3461651B2 (en) * | 1996-01-24 | 2003-10-27 | 電気化学工業株式会社 | Hexagonal boron nitride powder and its use |
JP3839539B2 (en) * | 1997-01-20 | 2006-11-01 | 修 山本 | Crystalline disordered layered boron nitride powder and method for producing the same |
US6306358B1 (en) * | 1998-06-02 | 2001-10-23 | Osamu Yamamoto | Crystalline turbostratic boron nitride powder and method for producing same |
JP3854303B2 (en) * | 2006-04-07 | 2006-12-06 | 修 山本 | Method for producing crystalline disordered layer boron nitride powder |
JP2010520846A (en) * | 2007-02-22 | 2010-06-17 | ボロン コンパウンズ エルティーディー. | Method for preparing ceramic material |
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4764489A (en) * | 1987-12-10 | 1988-08-16 | E. I. Du Pont De Nemours And Company | Preparation of mixed boron and aluminum nitrides |
US6348179B1 (en) * | 1999-05-19 | 2002-02-19 | University Of New Mexico | Spherical boron nitride process, system and product of manufacture |
Non-Patent Citations (2)
Title |
---|
BARTNITSKAYA ET AL.: "Structural-chemical aspects of the catalytic synthesis of graphite-like boron nitride", JOURNAL POWDER METALLURGY AND METAL CERAMICS, vol. 37, no. 1-2, January 1998 (1998-01-01), XP055087465, Retrieved from the Internet <URL:URL:http://www.springerlink.com/content/ft02854227364577> [retrieved on 20100622] * |
See also references of EP2408711A4 * |
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CN102515120A (en) * | 2011-12-05 | 2012-06-27 | 沈阳大学 | Preparation method of hollow hexagonal boron nitride microsphere |
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