WO2010102229A1 - Wire-bonded integrated circuit package without package substrate and including metal traces linking to external connection pads routed under integrated circuit die. - Google Patents
Wire-bonded integrated circuit package without package substrate and including metal traces linking to external connection pads routed under integrated circuit die. Download PDFInfo
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- WO2010102229A1 WO2010102229A1 PCT/US2010/026394 US2010026394W WO2010102229A1 WO 2010102229 A1 WO2010102229 A1 WO 2010102229A1 US 2010026394 W US2010026394 W US 2010026394W WO 2010102229 A1 WO2010102229 A1 WO 2010102229A1
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- Prior art keywords
- integrated circuit
- metal layer
- die
- routable
- circuit assembly
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W42/00—Arrangements for protection of devices
- H10W42/20—Arrangements for protection of devices protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons
- H10W42/261—Arrangements for protection of devices protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons characterised by their shapes or dispositions
- H10W42/276—Arrangements for protection of devices protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons characterised by their shapes or dispositions the arrangements being on an external surface of the package, e.g. on the outer surface of an encapsulation
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/01—Manufacture or treatment
- H10W70/04—Manufacture or treatment of leadframes
- H10W70/042—Etching
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/40—Leadframes
- H10W70/421—Shapes or dispositions
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/01—Manufacture or treatment
- H10W74/019—Manufacture or treatment using temporary auxiliary substrates
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
- H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/7424—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used as a support during the manufacture of self-supporting substrates
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/40—Leadframes
- H10W70/411—Chip-supporting parts, e.g. die pads
- H10W70/417—Bonding materials between chips and die pads
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/0198—Manufacture or treatment batch processes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/073—Connecting or disconnecting of die-attach connectors
- H10W72/07302—Connecting or disconnecting of die-attach connectors using an auxiliary member
- H10W72/07304—Connecting or disconnecting of die-attach connectors using an auxiliary member the auxiliary member being temporary, e.g. a sacrificial coating
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/073—Connecting or disconnecting of die-attach connectors
- H10W72/07331—Connecting techniques
- H10W72/07337—Connecting techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy
- H10W72/07338—Connecting techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy hardening the adhesive by curing, e.g. thermosetting
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/075—Connecting or disconnecting of bond wires
- H10W72/07502—Connecting or disconnecting of bond wires using an auxiliary member
- H10W72/07504—Connecting or disconnecting of bond wires using an auxiliary member the auxiliary member being temporary, e.g. a sacrificial coating
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/851—Dispositions of multiple connectors or interconnections
- H10W72/874—On different surfaces
- H10W72/884—Die-attach connectors and bond wires
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
- H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
Definitions
- the invention relates generally to integrated circuit packaging, and more specifically to a routablc array metal integrated circuit package.
- circuits are usually relatively large or complex circuits such as computer processors, memory arrays, or other such devices.
- the actual circuits in the integrated circuit are typically formed using semiconductor devices formed on a substrate, such as doped silicon transistors, resistors, and capacitors formed on a silicon substrate.
- the combination of a substrate and circuitry formed on the substrate is often referred to as a ''die'', and usually has circuitry that is so small that it is impossible to see the individual electronic components or circuit traces with the naked eye. Due to the small size of the circuit elements formed on the substrate, the die is also relatively fragile and can be easily damaged by scratching.
- circuits that operate at high power such as high performance processors or controllers, also produce more heat than the integrated circuit die can dissipate, and so are not usable without some means of dissipating generated heat.
- Integrated circuit packages typically include pins, solder balls, or other electrical conductors that are coupled via small lead wires to various parts of the die's electrical circuits, enabling easy and reliable electrical connection from the package's exterior to the die's circuitry.
- These packages provide a variety functions not related to electrical connection, including carrying heat away from the die to the exterior of the circuit package and perhaps to an external heat sink, and protecting the relatively fragile die from environmental factors such as abrasion, moisture, and shock.
- packaging an integrated circuit die has several challenges itself. Although a typical integrated circuit die is too small to form connections to without specialized equipment, it is still desirable to keep the size of die packaged die small so that it can be easily integrated into compact or portable electronic devices.
- the cost of the package is a significant concern, as complex packages that provide good heat management, good protection of the die, and easy connectivity to external circuitry can be a significant part of the cost of a packaged integrated circuit. It is therefore desired to package integrated circuit dice in a manner that addresses such commercial needs.
- One example embodiment of the invention comprises an integrated circuit assembly including an integrated circuit die, and a routable metal layer comprising metal traces linking a plurality of wire bond pads to a plurality of external connection pads such thai the metal traces are routable under the die area,
- An electrically nonconductive adhesive layer couples the integrated circuit die to the routable metal layer, and a plurality of wire bonds link circuitry on the integrated circuit die to the wire bond pads in the routable metal layer.
- An overfill material encapsulates the integrated circuit die, the plurality of wire bonds, and one side of the package's external connection pads.
- a plurality of solder balls are formed on the plurality of external connection pads.
- Figures I a-I g show an example integrated circuit assembly fabricated using a sacrificial metal base substrate carrier, consistent with a prior art example.
- Figure 2a shows a side view of an integrated circuit assembly having a routable metal layer, consistent with some embodiments of the invention.
- Figure 2b is a bottom view of the integrated circuit assembly having a routable metal layer of Figure 2a, consistent with an example embodiment of the invention.
- Figures 3a-3f illustrate an example method of forming an integrated circuit assembly having a routable metal layer using a sacrificial base layer and localized solder stop, consistent with an example embodiment of the invention.
- Figures 4a-4b illustrate an alternate method of forming an integrated circuit assembly having a roulable metal layer using a sacrificial base layer using a full solder mask, consistent with an example embodiment of the invention.
- Figure 5 is a top view of a series of integrated circuit assemblies formed on a sacrificial metal strip base layer, consistent with an example embodiment of the invention.
- the invention disclosed herein comprises in one example embodiment an integrated circuit assembly comprising an integrated circuit die, and a routable metal layer comprising metal traces linking a plurality of wire bond pads to a plurality of external connection pads such that the metal traces are routable under the die area,
- An electrically nonconductive adhesive layer couples the integrated circuit die to the routable metal layer, and a plurality of wire bonds link circuitry on the integrated circuit die to the wire bond pads in the roulable metal layer.
- An overfill material encapsulates at least the integrated circuit die and the plurality of wire bonds, and one side of the package's external connection pads.
- a plurality of solder balls are formed on the plurality of external connection pads,
- Packaging for integrated circuits is typically designed Io protect a relatively fragile integrated circuit die from its environment, to provide reliable electrical connection between the die and external circuitry, and in many cases to carry heat away from the die. Designing the packaging takes into consideration not only physical constraints such as these, but also the cost arid complexity of the packaging process and the equipment required to package the dice.
- Figures Ia-Ig show a sacrificial metal base strip packaging process. This example process starts by using a metal base strip onto which a package is formed, and from which the completed package is eventually separated,
- a copper base strip 101 has a plating resist pattern applied to the surface of the copper base strip, as shown at 102.
- the bottom side of the copper base strip also has an unpatterned, solid layer of plating resist coating to prevent any plating metal deposition onto the bottom surface.
- the resist pattern on the top side allows a plating step shown in Figure Ib to deposit plating material in the patterned resist openings to form wire-bond metal pads 103 and die attach pad 104.
- the plating material is one or more metal layers, such as gold, palladium, nickel, and copper.
- Palladium and gold work well for surfaces of metal layers to which wires will later be bonded, while metals such as nickel or copper are often used for the body of a plating step due to their high conductivity and relatively low cost. Gold is also resistant to oxidation, and so is often used for external plating of metal layers to prevent oxidation of the underlying solderable metal.
- the resist material 102 applied in Figure Ia is removed in Figure Ic, leaving only the metal pads 103 and 104 formed in Figure ib on the copper strip 101.
- region 104 forms a base for attachment of the integrated circuit die, as shown in Figure I d.
- the die 105 is attached to the metal plating region 104, such as by use of an epoxy or other adhesive.
- the various circuits on the integrated circuit die are then connected to metal pads 103 formed during the plating process by using fine wire in what is known as a wirebond process.
- the wires 106 connect various electrical contact points on the integrated circuit die to the metal pads 103, such thai the metal pads 103 can be eventually coupled to electrical connections external to the completed package to couple the integrated circuit to external circuitry.
- the assembly is covered with an over-mold material as shown at 107 in Figure If to encapsulate and protect the die and the wiring and metal pads.
- This over-mold material is an electrically nonconductivc material, such as epoxy or another suitable material.
- the encapsulated assembly is then processed to remove the sacrificial metal base strip 101 from the assembly, resulting in the die assembly shown in Figure Ig.
- the copper base strip in this example is removed from the die assembly by a chemical etch that removes copper efficiently but does not attach to or react with the exposed metal used in the plated metal pads 103 and 104.
- the metal pads 103 and 104 in the assembly shown in Figure Ig can then be coupled to the next level board assembly using solder or conductive adhesive compound, or through other means.
- the metal pad 104 that supports the die is the same metal that is used to form the pads 103, but no metal pad formed in the plating process of Figure Ib is connected to any other metal pad.
- the bond wires shown at 106 of Figure Ie couple the die's circuits to the metal pads 103, enabling connection to external circuitry. Because the bond wires cannot cross one another without risking electrically coupling one wire to the other due Io accidental contact, this packaging system does not provide the ability to cross or route wires to different pads.
- One example embodiment of the invention addresses some problems with the assembly of Figure 1 by providing a sacrificial metal base strip packaging process that includes a routable layer that is formed by pattern plating. This provides improved flexibility in routing circuit traces to facilitate external connections
- Figures 2a and 2b show a pattern-plated sacrificial metal strip die package including a Ball Grid Array (BGA) format, consistent with an example embodiment of the invention. Other package formats without solder balls are also commonly used.
- BGA Ball Grid Array
- the die package is inverted from the example die package shown in Figure Ig, and includes a routable metal layer in place of the large pad 104 onto which the die is mounted in Figure 1.
- a routable metal layer of conductive ⁇ races 204 is formed on the sacrificial metal layer, including in the area in which the die is mounted.
- the traces are coupled to the die via wire bond connections to metal wirebond pads 203, which are coupled via the metal layer conductive traces 204 to package pads 201 .
- Solder balls 202 are here formed on package pads 201 in openings in solder mask layer 206, for connection to external circuitry.
- an electrically non-conductive die-attach adhesive material 205 such as epoxy compound, is used for die-attach. This provides a compact, efficient package, with enhanced flexibility in configuration due to the routable metal traces in the metal layer.
- a bottom view of the example package of Figure 2a is shown in Figure 2b.
- conductive traces 204 are shown to link various solder balls 202 to various metal wirebond pads 203, such that a wirebond connection from the die Io the wirebond pad 203 is electrically coupled via conductive traces 204 to the solder balls 202.
- Some solder balls, such as power and ground connections, may be connected to multiple pads on the routable metal layer so that multiple power and ground connections can be made between the various circuits on the die and the external power source.
- Figures 3a-3f illustrate a method of forming a die package having a routable metal layer using a sacrificial metal strip integrated circuit packaging process, consistent with an example embodiment of the invention.
- the sacrificial metal strip is a copper metal base 301, and a routable or patterned metal circuit layer 302 is formed on the strip, such as by using a photo-defmabie plating resist materia] and photo-mask as described in greater detail with respect to the example of Figure 1.
- the metal layer here has one or more layers of metal in a metal-stack, where different types of metal may be used in different layers to provide different properties.
- the metal routable layer 302 which comprises wirebonding pad features 203, package pad features 201 , and routing trace features 204 as illustrated in figures 2a and 2b, includes in one embodiment a wire-bondable metal on the top surface, such as palladium, silver, or gold.
- a diffusion barrier metal layer such as nickel is immediately below the wire-bondable metal layer, and a conductive metal such as copper is next.
- a solder diffusion barrier metal such as nickel is formed, and the bottom layer is an oxidation prevention metal such as silver, gold, or palladium,
- more layers, other layers, or only select layers from the above example are included in the routable metal layer 302.
- the die is attached to the routable metal layer in Figure 3b via an electrically nonconductive cpoxy layer 303, or via another nonconductive adhesive material.
- the die is therefore not directly electrically connected to any routable metal traces routed under the die, but is instead coupled to the routable metal layer via bond wires 304.
- the bond wires 304 are attached to various pads 305, which are coupled via the routable metal layer to external circuit connections.
- the assembly is then encased as shown in Figure 3c with an overraold material 306, which protects the die and the bond wires from abrasion, moisture, and other environmental factors.
- the sacrificial metal strip copper base is then removed as shown in Figure 3d (shown upside-down), such as by chemical etching. This leaves the routable metal layer and the die-attach cpoxy exposed from the overmold applied in Figure 3c.
- the sacrificial metal strip is in some examples a long or continuous metal strip that is cut into individual die packages near the end of the packaging process, such as by sawing the metal strip or the die package, as shown in Figure 5.
- solder balls are applied to the exposed solder ball regions 309 of the routable metal layer as shown in Figure 3d.
- solder stop 307 is applied at various points to constrain solder from flowing onto metal traces 204 during solder bail attachment to the pad areas as shown at 308 in Figure 3f.
- Figures 4a and 4b present an alternate method of applying solder balls, using a full solder mask layer instead of solder stop as employed in Figures 3e and 3f.
- a permanent solder mask 401 is applied to the entire bottom side of the integrated circuit package except for the area over the package metal pads that will receive solder balls, as shown at 402 in Figure 4b.
- This solder mask layer can be of a photo-definable or non-photo-definable characteristic, in ink or dry-i ⁇ lm form, and can be applied using screening or lamination process in various embodiments.
- a series of integrated circuit assemblies can be formed on a long or continuous sacrificial metal strip base layer, such as is shown in Figure 5.
- the individual integrated circuit packages 501 are then separated from one another, such as by sawing, in the final stages of integrated circuit package production.
- the routable metal layer integrated circuit assembly technology described herein therefore provides a variety of advantages over prior art integrated circuit mounting technologies such as the example illustrated in Figure 1, including providing the advantage of full layer routing capability.
- a typical BGA package uses an organic substrate for routing. Eliminating an organic substrate in the routable metal layer integrated circuit examples illustrated in Figures 2-4 makes these examples significantly less expensive than prior technologies, and substantially reduces the height of the finished integrated circuit assembly which allows for thinner devices such as ceil phones, personal digital assistant devices, global positioning systems, and other portable or handheld electronic devices.
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- Wire Bonding (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
An integrated circuit assembly comprises an integrated circuit die, and a routable metal layer comprising metal traces linking a plurality of wire bond pads to a plurality of external connection pads such that the metal traces are routable under the die area. An electrically nonconductive adhesive layer couples the integrated circuit die to the routable metal layer, and a plurality of wire bonds link circuitry on the integrated circuit die to the wire bond pads in the routable metal layer. An overfill material encapsulates at least the integrated circuit die and the plurality of wire bonds, and a plurality of solder balls are formed on the plurality of external connection pads.
Description
WIRE-BONDED INTEGRATED CIRCUIT PACKAGE WITHOUT PACKAGE SUBSTRATE AND INCLUDING METAL TRACES LINKING TO EXTERNAL CONNECTION PADS ROUTED UNDER INTEGRATED CIRCUIT DIE
Benefit of priority is hereby claimed to U.S. Patent Application Serial Number 12/399,200, filed March 6, 2009, and entitled "Routable Array Metal Integrated Circuit Package'', which is incorporated herein by reference its entirety.
The invention relates generally to integrated circuit packaging, and more specifically to a routablc array metal integrated circuit package.
Most electronic or computerized devices have electronic circuits that include one or more integrated circuits, often called "chips". These integrated
15 circuits are usually relatively large or complex circuits such as computer processors, memory arrays, or other such devices. The actual circuits in the integrated circuit are typically formed using semiconductor devices formed on a substrate, such as doped silicon transistors, resistors, and capacitors formed on a silicon substrate.
20 The combination of a substrate and circuitry formed on the substrate is often referred to as a ''die'', and usually has circuitry that is so small that it is impossible to see the individual electronic components or circuit traces with the naked eye. Due to the small size of the circuit elements formed on the substrate, the die is also relatively fragile and can be easily damaged by scratching. Some
25 circuits that operate at high power, such as high performance processors or controllers, also produce more heat than the integrated circuit die can dissipate, and so are not usable without some means of dissipating generated heat.
For these and other reasons, almost all integrated circuit dice are provided to the manufacturers of devices such as computers or cell phones in packages that
30 are designed to protect the integrated circuit while making it easy to connect to other circuitry. Integrated circuit packages typically include pins, solder balls, or other electrical conductors that are coupled via small lead wires to various parts of
the die's electrical circuits, enabling easy and reliable electrical connection from the package's exterior to the die's circuitry. These packages provide a variety functions not related to electrical connection, including carrying heat away from the die to the exterior of the circuit package and perhaps to an external heat sink, and protecting the relatively fragile die from environmental factors such as abrasion, moisture, and shock.
But, packaging an integrated circuit die has several challenges itself. Although a typical integrated circuit die is too small to form connections to without specialized equipment, it is still desirable to keep the size of die packaged die small so that it can be easily integrated into compact or portable electronic devices. The cost of the package is a significant concern, as complex packages that provide good heat management, good protection of the die, and easy connectivity to external circuitry can be a significant part of the cost of a packaged integrated circuit. It is therefore desired to package integrated circuit dice in a manner that addresses such commercial needs.
One example embodiment of the invention comprises an integrated circuit assembly including an integrated circuit die, and a routable metal layer comprising metal traces linking a plurality of wire bond pads to a plurality of external connection pads such thai the metal traces are routable under the die area, An electrically nonconductive adhesive layer couples the integrated circuit die to the routable metal layer, and a plurality of wire bonds link circuitry on the integrated circuit die to the wire bond pads in the routable metal layer. An overfill material encapsulates the integrated circuit die, the plurality of wire bonds, and one side of the package's external connection pads. A plurality of solder balls are formed on the plurality of external connection pads.
Brief Description of the Figures Figures I a-I g show an example integrated circuit assembly fabricated using a sacrificial metal base substrate carrier, consistent with a prior art example. Figure 2a shows a side view of an integrated circuit assembly having a
routable metal layer, consistent with some embodiments of the invention.
Figure 2b is a bottom view of the integrated circuit assembly having a routable metal layer of Figure 2a, consistent with an example embodiment of the invention. Figures 3a-3f illustrate an example method of forming an integrated circuit assembly having a routable metal layer using a sacrificial base layer and localized solder stop, consistent with an example embodiment of the invention.
Figures 4a-4b illustrate an alternate method of forming an integrated circuit assembly having a roulable metal layer using a sacrificial base layer using a full solder mask, consistent with an example embodiment of the invention.
Figure 5 is a top view of a series of integrated circuit assemblies formed on a sacrificial metal strip base layer, consistent with an example embodiment of the invention.
Detailc
In the following detailed description of example embodiments of the invention, reference is made to specific example embodiments of the invention by way of drawings and illustrations. These examples are described in sufficient detail to enable those skilled in the art to practice the invention, and serve to illustrate how the invention may be applied to various purposes or embodiments. Other embodiments of the invention exist and are within the scope of the invention, and logical, mechanical, electrical, and other changes may be made without departing from the subject or scope of the present invention.
Features or limitations of various embodiments of the invention described herein, however essential to the example embodiments in which they are incorporated, do not limit other embodiments of the invention or the invention as a whole, and any reference to the invention, its elements, operation, and application do not limit the invention as a whole but serve only to define these example embodiments. The following detailed description does not, therefore, limit the scope of the invention, which is defined only by the appended claims.
The invention disclosed herein comprises in one example embodiment an integrated circuit assembly comprising an integrated circuit die, and a routable metal layer comprising metal traces linking a plurality of wire bond pads to a
plurality of external connection pads such that the metal traces are routable under the die area, An electrically nonconductive adhesive layer couples the integrated circuit die to the routable metal layer, and a plurality of wire bonds link circuitry on the integrated circuit die to the wire bond pads in the roulable metal layer. An overfill material encapsulates at least the integrated circuit die and the plurality of wire bonds, and one side of the package's external connection pads. In a further example, a plurality of solder balls are formed on the plurality of external connection pads,
Packaging for integrated circuits is typically designed Io protect a relatively fragile integrated circuit die from its environment, to provide reliable electrical connection between the die and external circuitry, and in many cases to carry heat away from the die. Designing the packaging takes into consideration not only physical constraints such as these, but also the cost arid complexity of the packaging process and the equipment required to package the dice. One solution to packaging a die is illustrated in Figures Ia-Ig, which show a sacrificial metal base strip packaging process. This example process starts by using a metal base strip onto which a package is formed, and from which the completed package is eventually separated,
In Figure Ia, a copper base strip 101 has a plating resist pattern applied to the surface of the copper base strip, as shown at 102. The bottom side of the copper base strip also has an unpatterned, solid layer of plating resist coating to prevent any plating metal deposition onto the bottom surface. The resist pattern on the top side allows a plating step shown in Figure Ib to deposit plating material in the patterned resist openings to form wire-bond metal pads 103 and die attach pad 104. In various embodiments, the plating material is one or more metal layers, such as gold, palladium, nickel, and copper. Palladium and gold work well for surfaces of metal layers to which wires will later be bonded, while metals such as nickel or copper are often used for the body of a plating step due to their high conductivity and relatively low cost. Gold is also resistant to oxidation, and so is often used for external plating of metal layers to prevent oxidation of the underlying solderable metal.
Once the metal plating process is completed, the resist material 102 applied in Figure Ia is removed in Figure Ic, leaving only the metal pads 103 and
104 formed in Figure ib on the copper strip 101. Here, region 104 forms a base for attachment of the integrated circuit die, as shown in Figure I d. The die 105 is attached to the metal plating region 104, such as by use of an epoxy or other adhesive. The various circuits on the integrated circuit die are then connected to metal pads 103 formed during the plating process by using fine wire in what is known as a wirebond process. As shown in Figure Ie, the wires 106 connect various electrical contact points on the integrated circuit die to the metal pads 103, such thai the metal pads 103 can be eventually coupled to electrical connections external to the completed package to couple the integrated circuit to external circuitry.
After the die is coupled via the wirebond wires to the metal pads formed in the plating process, the assembly is covered with an over-mold material as shown at 107 in Figure If to encapsulate and protect the die and the wiring and metal pads. This over-mold material is an electrically nonconductivc material, such as epoxy or another suitable material.
The encapsulated assembly is then processed to remove the sacrificial metal base strip 101 from the assembly, resulting in the die assembly shown in Figure Ig. The copper base strip in this example is removed from the die assembly by a chemical etch that removes copper efficiently but does not attach to or react with the exposed metal used in the plated metal pads 103 and 104. The metal pads 103 and 104 in the assembly shown in Figure Ig can then be coupled to the next level board assembly using solder or conductive adhesive compound, or through other means. The metal pad 104 that supports the die is the same metal that is used to form the pads 103, but no metal pad formed in the plating process of Figure Ib is connected to any other metal pad. The bond wires shown at 106 of Figure Ie couple the die's circuits to the metal pads 103, enabling connection to external circuitry. Because the bond wires cannot cross one another without risking electrically coupling one wire to the other due Io accidental contact, this packaging system does not provide the ability to cross or route wires to different pads.
One example embodiment of the invention addresses some problems with the assembly of Figure 1 by providing a sacrificial metal base strip packaging
process that includes a routable layer that is formed by pattern plating. This provides improved flexibility in routing circuit traces to facilitate external connections Figures 2a and 2b show a pattern-plated sacrificial metal strip die package including a Ball Grid Array (BGA) format, consistent with an example embodiment of the invention. Other package formats without solder balls are also commonly used. In Figure 2a, the die package is inverted from the example die package shown in Figure Ig, and includes a routable metal layer in place of the large pad 104 onto which the die is mounted in Figure 1.
Here, a routable metal layer of conductive {races 204 is formed on the sacrificial metal layer, including in the area in which the die is mounted. The traces are coupled to the die via wire bond connections to metal wirebond pads 203, which are coupled via the metal layer conductive traces 204 to package pads 201 . Solder balls 202 are here formed on package pads 201 in openings in solder mask layer 206, for connection to external circuitry. To prevent the die, which is typically silicon material, from electrically shorting to the package pad metal 201 and metal traces 204, an electrically non-conductive die-attach adhesive material 205, such as epoxy compound, is used for die-attach. This provides a compact, efficient package, with enhanced flexibility in configuration due to the routable metal traces in the metal layer. A bottom view of the example package of Figure 2a is shown in Figure 2b.
Here, conductive traces 204 are shown to link various solder balls 202 to various metal wirebond pads 203, such that a wirebond connection from the die Io the wirebond pad 203 is electrically coupled via conductive traces 204 to the solder balls 202. Some solder balls, such as power and ground connections, may be connected to multiple pads on the routable metal layer so that multiple power and ground connections can be made between the various circuits on the die and the external power source. An example is shown in Figure 2b at pads 207, which are coupled to one another and to a single solder ball via metal traces on the routable metal layer, Figures 3a-3f illustrate a method of forming a die package having a routable metal layer using a sacrificial metal strip integrated circuit packaging process, consistent with an example embodiment of the invention. In Figure 3a, the sacrificial metal strip is a copper metal base 301, and a routable or patterned
metal circuit layer 302 is formed on the strip, such as by using a photo-defmabie plating resist materia] and photo-mask as described in greater detail with respect to the example of Figure 1. The metal layer here has one or more layers of metal in a metal-stack, where different types of metal may be used in different layers to provide different properties.
For example, the metal routable layer 302, which comprises wirebonding pad features 203, package pad features 201 , and routing trace features 204 as illustrated in figures 2a and 2b, includes in one embodiment a wire-bondable metal on the top surface, such as palladium, silver, or gold. A diffusion barrier metal layer such as nickel is immediately below the wire-bondable metal layer, and a conductive metal such as copper is next. Below that a solder diffusion barrier metal such as nickel is formed, and the bottom layer is an oxidation prevention metal such as silver, gold, or palladium, In alternate embodiments, more layers, other layers, or only select layers from the above example are included in the routable metal layer 302.
The die is attached to the routable metal layer in Figure 3b via an electrically nonconductive cpoxy layer 303, or via another nonconductive adhesive material. The die is therefore not directly electrically connected to any routable metal traces routed under the die, but is instead coupled to the routable metal layer via bond wires 304. The bond wires 304 are attached to various pads 305, which are coupled via the routable metal layer to external circuit connections.
The assembly is then encased as shown in Figure 3c with an overraold material 306, which protects the die and the bond wires from abrasion, moisture, and other environmental factors. The sacrificial metal strip copper base is then removed as shown in Figure 3d (shown upside-down), such as by chemical etching. This leaves the routable metal layer and the die-attach cpoxy exposed from the overmold applied in Figure 3c. The sacrificial metal strip is in some examples a long or continuous metal strip that is cut into individual die packages near the end of the packaging process, such as by sawing the metal strip or the die package, as shown in Figure 5.
Solder balls are applied to the exposed solder ball regions 309 of the routable metal layer as shown in Figure 3d. In Figure 3e, solder stop 307 is applied at various points to constrain solder from flowing onto metal traces 204
during solder bail attachment to the pad areas as shown at 308 in Figure 3f.
Figures 4a and 4b present an alternate method of applying solder balls, using a full solder mask layer instead of solder stop as employed in Figures 3e and 3f. In Figure 4a, a permanent solder mask 401 is applied to the entire bottom side of the integrated circuit package except for the area over the package metal pads that will receive solder balls, as shown at 402 in Figure 4b, This solder mask layer can be of a photo-definable or non-photo-definable characteristic, in ink or dry-iϊlm form, and can be applied using screening or lamination process in various embodiments. As previously discussed in the example presented in Figure 3, a series of integrated circuit assemblies can be formed on a long or continuous sacrificial metal strip base layer, such as is shown in Figure 5. The individual integrated circuit packages 501 are then separated from one another, such as by sawing, in the final stages of integrated circuit package production. The routable metal layer integrated circuit assembly technology described herein therefore provides a variety of advantages over prior art integrated circuit mounting technologies such as the example illustrated in Figure 1, including providing the advantage of full layer routing capability. A typical BGA package uses an organic substrate for routing. Eliminating an organic substrate in the routable metal layer integrated circuit examples illustrated in Figures 2-4 makes these examples significantly less expensive than prior technologies, and substantially reduces the height of the finished integrated circuit assembly which allows for thinner devices such as ceil phones, personal digital assistant devices, global positioning systems, and other portable or handheld electronic devices. Although specific embodiments have been illustrated and described herein, it will be appreciated by those of ordinary skill in the art that any arrangement that achieve the same purpose, structure, or function may be substituted for the specific embodiments shown. This application is intended to cover any adaptations or variations of die example embodiments of the invention described herein. It is intended that this invention be limited only by the claims, and the full scope of equivalents thereof
Claims
1. An integrated circuit assembly, comprising: an integrated circuit die; a roulable metal layer comprising metal traces linking a plurality of wire bond pads to a plurality of external connection pads such that the metal traces are routable under the die area; an electrically nonconductivc adhesive layer coupling the integrated circuit die to the routable metal layer: and a plurality of wire bonds linking circuitry on the integrated circuit die to the wire bond pads in the routable metal layer,
2. The integrated circuit assembly of claim 1 , further comprising a sacrificial metal strip upon which the routable metal layer is formed, such that the strip is removable from the rest of the integrated circuit assembly.
3. The integrated circuit assembly of claim 1, further comprising an overfill material encapsulating at least the integrated circuit die and the plurality of wire bonds,
4. fhc integrated circuit assembly of claim 3. wherein the overfill further fills at least some gaps between metal traces in the routable metal layer,
5. The integrated circuit assembly of claim 1, wherein a plurality of solder balls are formed on the plurality of external connection pads.
6. The integrated circuit assembly of claim 5, wherein at least one of solder stop or a solder mask are used to place the solder balls,
7. fhc integrated circuit assembly of claim 1. wherein the routable metal layer comprises a plurality of traces routed in the area in which the die is adhesively attached to the routable metal layer.
8. The integrated circuit assembly of claim 7, wherein the electrically nonconductive adhesive layer material fills gaps between two or more traces routed in the routabie metal layer in the area in which the die is adhesively attached to the routabie metal layer.
9. The integrated circuit assembly of claim 1, wherein the routabie metal layer comprises one or more layers of metal comprising at least one of gold, silver, palladium, nickel, and copper.
10. A method of forming an integrated circuit assembly, comprising: forming a roulable metal layer on a sacrificial base layer; attaching an integrated circuit die to the routabie metal layer using an electrically nonconductive adhesive; attaching wire bond wires coupling circuitry on the die to the routabie metal layer; encapsulating at least the die and the wire bond wires in an electrically nonconductive protective overfill material; and removing the sacrificial base layer from the rest of the integrated circuit assembly.
11. The method of claim 10, wherein the sacrificial base layer comprises a metal layer that is chemically removed from the integrated circuit assembly.
12. The method of claim 10, further comprising filling at least some gaps between metal traces in the routabie metal layer with the electrically nonconductive protective overfill material.
13. The method of claim 10, wherein the routabie metal layer further comprises a plurality of external connection pads, the method further comprising forming a plurality of solder balls on the plurality of external connection pads,
14. The method of claim 13, further comprising applying at least one of solder stop or a solder mask near the external connection pads to constrain the location of the formed solder bails.
15. The method of claim 13, further comprising mounting the integrated circuit assembly to a circuit board via the plurality of solder balls,
16. The method of claim 10, wherein the routable metal layer comprises a plurality of traces routed in the area in which the die is adhesively attached to the routable metal layer.
17. The method of claim 16, further comprising filling gaps between two or more traces routed in the routable metal layer in the area in which the die is adhesively attached to the routable metal layer with the electrically nonconductivε adhesive used to attach the die to the routable metal layer.
18. An integrated circuit assembly, comprising: an integrated circuit die; a routable metal layer comprising metal traces linking a plurality of wire bond pads to a plurality of external connection pads such thai the metal traces are routable under the die area; an electrically non conductive adhesive layer coupling the integrated circuit die to the routable metal layer; a plurality of wire bonds linking circuitry on the integrated circuit die to the wire bond pads in the routable metal layer; an overfill material encapsulating at least the integrated circuit die and the plurality of wire bonds; and a plurality of solder balls formed on the plurality of external connection pads.
19. The integrated circuit assembly of claim 18, wherein the plurality of solder balls electrically couple the integrated circuit assembly to a printed circuit board.
20. The integrated circuit assembly of claim 19, wherein the integrated circuit assembly attached to the printed circuit board is encapsulated with an electrically non conductive overfill material.
21. The integrated circuit assembly of claim 18, wherein the integrated circuit assembly is further encased in at least one of a protective polymer, ceramic, or metal case.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/399,200 | 2009-03-06 | ||
| US12/399,200 US8531022B2 (en) | 2009-03-06 | 2009-03-06 | Routable array metal integrated circuit package |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2010102229A1 true WO2010102229A1 (en) | 2010-09-10 |
Family
ID=42104427
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/US2010/026394 Ceased WO2010102229A1 (en) | 2009-03-06 | 2010-03-05 | Wire-bonded integrated circuit package without package substrate and including metal traces linking to external connection pads routed under integrated circuit die. |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US8531022B2 (en) |
| TW (1) | TWI491001B (en) |
| WO (1) | WO2010102229A1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9324641B2 (en) * | 2012-03-20 | 2016-04-26 | Stats Chippac Ltd. | Integrated circuit packaging system with external interconnect and method of manufacture thereof |
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|---|---|---|---|---|
| US5830800A (en) * | 1997-04-11 | 1998-11-03 | Compeq Manufacturing Company Ltd. | Packaging method for a ball grid array integrated circuit without utilizing a base plate |
| US7245023B1 (en) * | 2004-06-11 | 2007-07-17 | Bridge Semiconductor Corporation | Semiconductor chip assembly with solder-attached ground plane |
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| US6001671A (en) * | 1996-04-18 | 1999-12-14 | Tessera, Inc. | Methods for manufacturing a semiconductor package having a sacrificial layer |
| US6635957B2 (en) * | 1998-06-10 | 2003-10-21 | Asat Ltd. | Leadless plastic chip carrier with etch back pad singulation and die attach pad array |
| JP2002076051A (en) | 2000-09-01 | 2002-03-15 | Nec Corp | Bonding pad structure and bonding method for semiconductor device |
| US6238952B1 (en) * | 2000-02-29 | 2001-05-29 | Advanced Semiconductor Engineering, Inc. | Low-pin-count chip package and manufacturing method thereof |
| JP3883784B2 (en) * | 2000-05-24 | 2007-02-21 | 三洋電機株式会社 | Plate-shaped body and method for manufacturing semiconductor device |
| KR100347706B1 (en) * | 2000-08-09 | 2002-08-09 | 주식회사 코스타트반도체 | New molded package having a implantable circuits and manufacturing method thereof |
| US6903449B2 (en) * | 2003-08-01 | 2005-06-07 | Micron Technology, Inc. | Semiconductor component having chip on board leadframe |
| US20070108583A1 (en) * | 2005-08-08 | 2007-05-17 | Stats Chippac Ltd. | Integrated circuit package-on-package stacking system |
| JP4871280B2 (en) * | 2005-08-30 | 2012-02-08 | スパンション エルエルシー | Semiconductor device and manufacturing method thereof |
| JP2008108826A (en) * | 2006-10-24 | 2008-05-08 | Elpida Memory Inc | Semiconductor device |
| US7989930B2 (en) * | 2007-10-25 | 2011-08-02 | Infineon Technologies Ag | Semiconductor package |
| US7646083B2 (en) * | 2008-03-31 | 2010-01-12 | Broadcom Corporation | I/O connection scheme for QFN leadframe and package structures |
| MY163911A (en) | 2009-03-06 | 2017-11-15 | Shenzhen Standarad Patent & Trademark Agent Ltd | Leadless integrated circuit package having high density contacts |
| US8455304B2 (en) | 2010-07-30 | 2013-06-04 | Atmel Corporation | Routable array metal integrated circuit package fabricated using partial etching process |
-
2009
- 2009-03-06 US US12/399,200 patent/US8531022B2/en active Active
-
2010
- 2010-03-05 TW TW099106499A patent/TWI491001B/en active
- 2010-03-05 WO PCT/US2010/026394 patent/WO2010102229A1/en not_active Ceased
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5830800A (en) * | 1997-04-11 | 1998-11-03 | Compeq Manufacturing Company Ltd. | Packaging method for a ball grid array integrated circuit without utilizing a base plate |
| US7245023B1 (en) * | 2004-06-11 | 2007-07-17 | Bridge Semiconductor Corporation | Semiconductor chip assembly with solder-attached ground plane |
Also Published As
| Publication number | Publication date |
|---|---|
| US8531022B2 (en) | 2013-09-10 |
| TWI491001B (en) | 2015-07-01 |
| US20100224981A1 (en) | 2010-09-09 |
| TW201044535A (en) | 2010-12-16 |
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