WO2010101390A4 - Power supply for anodizing, anodizing method, and anodized film - Google Patents

Power supply for anodizing, anodizing method, and anodized film Download PDF

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Publication number
WO2010101390A4
WO2010101390A4 PCT/KR2010/001292 KR2010001292W WO2010101390A4 WO 2010101390 A4 WO2010101390 A4 WO 2010101390A4 KR 2010001292 W KR2010001292 W KR 2010001292W WO 2010101390 A4 WO2010101390 A4 WO 2010101390A4
Authority
WO
WIPO (PCT)
Prior art keywords
pulse wave
pulse
voltage
modulated
level
Prior art date
Application number
PCT/KR2010/001292
Other languages
French (fr)
Other versions
WO2010101390A3 (en
WO2010101390A2 (en
Inventor
Young-Soo Kim
Yong-Bong Shin
Original Assignee
Kost Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kost Corporation filed Critical Kost Corporation
Priority to US13/254,187 priority Critical patent/US20120000784A1/en
Priority to CN2010800203468A priority patent/CN102439201A/en
Publication of WO2010101390A2 publication Critical patent/WO2010101390A2/en
Publication of WO2010101390A3 publication Critical patent/WO2010101390A3/en
Publication of WO2010101390A4 publication Critical patent/WO2010101390A4/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02—Anodisation
    • C25D11/04—Anodisation of aluminium or alloys based thereon
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/005—Apparatus specially adapted for electrolytic conversion coating
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02—Anodisation
    • C25D11/024—Anodisation under pulsed or modulated current or potential

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Water Treatment By Electricity Or Magnetism (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

An anodizing method for growing an anodized layer on a surface of aluminum in electrolyte is disclosed. The method comprises applying a DC/AC-combined pulse wave between an anode and a cathode. The DC/AC-combined pulse wave is provided by combining a DC pulse wave with an AC wave, and has a peak voltage at a start point of each pulse. The grown anodized layer may be equal to or less than 300μm in thickness, and the diameter of a cell in the anodized layer may range between 50nm and 100nm. The power supply used for anodizing may comprise a rectifying modulator unit, an AC modulating unit, a pulse wave synthesizing unit, and a control unit.

Claims

AMENDED CLAIMS
received by the International Bureau on 21 February 2011 (21.02.2011 )
[Claim 1 ]
An apparatus for providing a combined pulse wave for anodizing process, the apparatus comprising:
a first pulse wave generation unit configured to provide a first pulse wave;
a second pulse wave generation unit configured to provide a second pulse wave; and a pulse wave synthesizing unit configured to combine the first pulse wave and the second pulse wave.
[Claim 2 J
The apparatus according to claim 1, further comprising:
A control unit configured to control an operation of the first pulse wave generation unit, the second pulse wave generation unit, and the pulse wave synthesizing unit.
[Claim 3 ]
The apparatus according to claim 1, wherein,
the first pulse wave is a first modulated DC pulse wave,
the first pulse wave generation unit is a first rectifying unit configured to provide the first modulated DC pulse wave by rectifying an AC voltage wave from an AC power supply to produce a first DC pulse wave and modulating a first and/or a first amplitude of the first DC pulse wave,
the second pulse wave is a second modulated DC pulse wave, and
the second pulse wave generation unit is a second rectifying unit configured to provide the second modulated DC pulse wave by rectifying the AC voltage wave from the AC power supply to produce a second DC pulse wave and modulating a second and/or a second amplitude of the second DC pulse wave.
[Claim 4]
The apparatus according to claim 3, wherein,
the first pulse wave generation unit operates independently from the second pulse wave generation unit.
[Claim 5]
The apparatus according to claim 3, further comprising an AC modulating unit configured to provide an AC pulse wave by modulating a third period or a third amplitude of the AC voltage wave from the AC power supply, wherein,
the pulse wave synthesizing unit is configured to combine the first modulated DC pulse wave, the second modulated DC pulse wave, and the AC pulse wave.
[Claim 6]
The apparatus according to claim 5, wherein, at least one of the first pulse wave generation unit, the second pulse wave generation unit, and the AC modulating unit comprises a 600 kHz FET (Field Effect Transistor) and a capacitor with an electrostatic capacity of 1500uF and a rated voltage of 400V.
[Claim 7)
The apparatus according to claim 5, further comprising:
a first on/off switch between the first rectifying unit and one of the AC power supply and the pulse wave synthesizing unit;
a second on/off switch between the second rectifying unit and one of the AC power supply and the pulse wave synthesizing unit; and
a third on/off switch between the AC modulating unit and one of the AC power supply and the pulse wave synthesizing unit.
[Claim 8]
The apparatus according to claim 1, wherein,
the first pulse wave is a first modulated DC pulse wave,
the first pulse wave generation unit is a first rectifying unit configured to provide the first modulated DC pulse wave by rectifying an AC voltage wave from an AC power supply to produce a first DC pulse wave and modulating a first and/or a first amplitude of the first DC pulse wave,
the second pulse wave is an AC pulse wave, and
the second pulse wave generation unit is an AC modulating unit configured to provide an AC pulse wave by modulating a third period or a third amplitude of the AC voltage wave from the AC power supply.
[Claim 9]
An anodizing method for growing an anodized layer on a surface of an aluminum piece, the method comprising:
providing an anode and a cathode in electrolyte, the anode comprising the aluminum piece; and
applying a pulse wave between the anode and the cathode,
wherein the pulse wave comprises a first modulated DC pulse wave component and an AC wave component, and the pulse wave has a peak voltage at a start point of each pulse.
[Claim 11]
An anodizing method according to claim 9, wherein the pulse wave comprises the first modulated DC pulse wave component, a second modulated DC pulse wave component, and the AC wave component.
[Claim 12]
The anodizing method according to claim 9, wherein each pulse shape of the pulse wave is convex upward while the voltage level decreases from the voltage peak with time.
[Claim 13]
The anodizing method according to claim 9, wherein negative voltage is applied between the anode and the cathode during the interval from an end point of a pulse to a start point of following pulse.
[Claim 14]
The anodizing method according to claim 11, wherein the first modulated DC pulse wave component has different phase from the second modulated DC pulse wave component.
[Claim 15]
The anodizing method according to claim 9, wherein a maximum voltage level or an average voltage level of each pulse of the pulse wave changes with time.
[Claim 16]
The anodizing method according to claim 9, wherein a trajectory of the maximum voltage level or the average voltage level of each pulse of the pulse wave follows sine waveform.
[Claim 17]
The anodizing method according to claim 16, wherein the trajectory is formed at least by,
increasing a voltage level from an initial level to a predetermined first level, maintaining the voltage level at the first level for a first predetermined time, increasing the voltage from the first level to a second level, the second level being higher than the first level, and
maintaining the voltage level at the second level for a second predetermined time.
[Claim 18]
The anodizing method according to claim 9, wherein at least one of a period with negative voltage of the pulse wave and a period with positive voltage of the pulse wave changes with time.
[Claim 19]
An aluminum-containing piece with anodized layer formed by a process comprising a step of applying a pulse wave between an anode and a cathode, wherein,
the anodized layer is formed on a surface of the aluminum containing, and a diameter of a cell in the anodized layer ranges between 50nm and lOOnm, and a thickness of the anodized layer is between 20 m and 300 πι.
PCT/KR2010/001292 2009-03-04 2010-03-02 Power supply for anodizing, anodizing method, and anodized film WO2010101390A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US13/254,187 US20120000784A1 (en) 2009-03-04 2010-03-02 Power supply for anodizing, anodizing method, and anodized film
CN2010800203468A CN102439201A (en) 2009-03-04 2010-03-02 Power supply for anodizing, anodizing method, and anodized film

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020090018473A KR101061102B1 (en) 2009-03-04 2009-03-04 Power supply for anodizing, anodizing and anodizing
KR10-2009-0018473 2009-03-04

Publications (3)

Publication Number Publication Date
WO2010101390A2 WO2010101390A2 (en) 2010-09-10
WO2010101390A3 WO2010101390A3 (en) 2011-02-24
WO2010101390A4 true WO2010101390A4 (en) 2011-04-07

Family

ID=42710102

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/001292 WO2010101390A2 (en) 2009-03-04 2010-03-02 Power supply for anodizing, anodizing method, and anodized film

Country Status (4)

Country Link
US (1) US20120000784A1 (en)
KR (1) KR101061102B1 (en)
CN (1) CN102439201A (en)
WO (1) WO2010101390A2 (en)

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Publication number Priority date Publication date Assignee Title
JP6604722B2 (en) * 2013-01-18 2019-11-13 株式会社フジミインコーポレーテッド Articles with metal oxide-containing films
KR101633222B1 (en) * 2015-03-31 2016-06-23 지상중전기 주식회사 Power supply apparatus for aluminium anodic oxidation
KR102459575B1 (en) * 2016-01-06 2022-10-27 삼성디스플레이 주식회사 Display device
KR101908405B1 (en) * 2017-02-14 2018-10-16 (주)로드피아 Appararus of controlling power source for anodizing treatment and method thereof
EP3719181A3 (en) * 2019-04-05 2020-11-18 Eloxalwerk Ludwigsburg Helmut Zerrer GmbH Oxide layer and method of forming a thermally relaxed oxide layer
CN111235618B (en) * 2020-01-16 2021-10-29 长沙鼎日成金属表面处理有限公司 Anodic oxidation electrophoresis process for high-silicon high-copper aluminum alloy parts
CN111364081B (en) * 2020-04-02 2021-11-23 南京理工大学 Preparation method of porous alumina template with gradient change of aperture and thickness
CN112760694B (en) * 2020-12-30 2021-08-24 牡丹江师范学院 Method for preparing high-temperature-resistant oxide film on surface of titanium alloy through double-electrode discharge

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US4046649A (en) * 1974-08-13 1977-09-06 Westinghouse Electric Corporation Forward-reverse pulse cycling anodizing and electroplating process
JP2000282294A (en) * 1999-03-31 2000-10-10 Kobe Steel Ltd Formation of anodically oxidized film excellent in thermal crack resistance and corrosion resistance and anodically oxidized film-coated member
US6916414B2 (en) * 2001-10-02 2005-07-12 Henkel Kommanditgesellschaft Auf Aktien Light metal anodization
JP4631047B2 (en) * 2004-01-05 2011-02-16 国立大学法人広島大学 Structure comprising anodized alumina film, method for producing the same, and use thereof
JP2005304197A (en) 2004-04-13 2005-10-27 Idx Corp Anodizing power supply
EP1666258B1 (en) * 2004-12-01 2011-10-05 FUJIFILM Corporation Repellency increasing structure and method of producing the same, liquid ejection head and method of producing the same, and stain-resistant film
JP2006199023A (en) * 2004-12-21 2006-08-03 Fuji Photo Film Co Ltd Liquid-repellency increasing structure and manufacturing method for the same, liquid ejection head and stain-resistant film
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JP2007154302A (en) 2005-11-30 2007-06-21 Idx Corp Power source system for aluminum alloy anodic oxidation

Also Published As

Publication number Publication date
WO2010101390A3 (en) 2011-02-24
WO2010101390A2 (en) 2010-09-10
KR20100099904A (en) 2010-09-15
KR101061102B1 (en) 2011-09-01
CN102439201A (en) 2012-05-02
US20120000784A1 (en) 2012-01-05

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