WO2010094374A1 - Photodétecteur et matrice de photodétecteurs - Google Patents

Photodétecteur et matrice de photodétecteurs Download PDF

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Publication number
WO2010094374A1
WO2010094374A1 PCT/EP2010/000182 EP2010000182W WO2010094374A1 WO 2010094374 A1 WO2010094374 A1 WO 2010094374A1 EP 2010000182 W EP2010000182 W EP 2010000182W WO 2010094374 A1 WO2010094374 A1 WO 2010094374A1
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WO
WIPO (PCT)
Prior art keywords
photosensor
region
semiconductor substrate
doped
bulk material
Prior art date
Application number
PCT/EP2010/000182
Other languages
German (de)
English (en)
Inventor
Dirk Leipold
Marco Annese
Original Assignee
Espros Photonics Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Espros Photonics Ag filed Critical Espros Photonics Ag
Publication of WO2010094374A1 publication Critical patent/WO2010094374A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1463—Pixel isolation structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1464—Back illuminated imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14623—Optical shielding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes

Definitions

  • the invention relates to a photosensor having at least one integrated CMOS circuit according to the preamble of claim 1 and of claim 2 or a photosensor matrix according to the preamble of claim 15.
  • CMOS circuits for reading.
  • the components of the individual CMOS circuits are embedded, for example, in wells, which in turn lie in a doped layer.
  • the remainder of the bulk material of the semiconductor substrate underneath is generally doped differently with respect to the doped layer arranged above it, in which the corresponding wells for the CMOS circuits are also embedded. If electron-hole pairs are generated by incident photons, the corresponding charge carriers can migrate to the photodiode contacts, provided that the electron-hole pairs were generated within the doped layer or at least in a sufficiently close region to the latter.
  • the object of the invention is to propose an improved photosensor or an improved photosensor matrix which enables a high light quantum yield.
  • the object is, starting from a photosensor or a photosensor matrix of the type mentioned by the characterizing features of claim 1, claim 2 or claim 15 solved.
  • a photosensor according to the invention with at least one integrated CMOS circuit is characterized in that the photodiode is formed from a doped region located in the semiconductor substrate and the remaining bulk material of the semiconductor substrate, wherein the active CMOS components of the remaining bulk material of the semiconductor substrate spiked region be spatially separated.
  • a CMOS circuit always includes active devices, e.g. Field effect transistors. Passive components are resistors, capacitors and inductors.
  • photodiodes are generally paid for as active devices.
  • the photodiode used to detect the photons is formed in the semiconductor material.
  • a semiconductor substrate is usually used.
  • circuits are usually manufactured on such "wafers".
  • the entire unprocessed substrate material of a wafer extending from top to bottom is commonly referred to as bulk material.
  • individual regions are doped in the semiconductor substrate.
  • these regions may emanate from the top of the semiconductor substrate.
  • the wells for the CMOS components are incorporated on the surface of the semiconductor substrate.
  • the doped regions separate the CMOS devices from the remaining bulk material of the semiconductor substrate.
  • the Contacts of the photodiode are arranged so that there is a photodiode contact with the doped region, and the photodiode itself is formed on the one hand by the doped region and on the other by the remaining bulk material.
  • the second photodiode contact is thus in connection with the remaining bulk material, possibly via a further doped point.
  • the photodiode is thus designed such that charge carriers which are generated in the bulk material migrate to the corresponding photodiode contact, depending on how the bias voltage of the photodiode is applied.
  • the corresponding charge carriers can also flow away via the doped region for contacting, wherein the corresponding CMOS components can be shielded from charge carriers ,
  • the entire volume below the CMOS circuit thus effectively forms the photodiode.
  • This allows a majority of the wafer, which extends almost the full wafer thickness, to be usable for the detection of photons.
  • a high light quantum yield is made possible. In particular, this can be made useful if due to the wavelength of the incident and to be detected light large penetration depths of the light in the Halbleitermate ⁇ al are possible.
  • An essential further idea of the invention lies in a photosensor according to the invention for the detection of photons with at least one CMOS integrated circuit in that the photodiode is formed of a doped region located in the semiconductor substrate and at least a portion of the bulk material of the semiconductor substrate, the region being formed as a buried layer and the portion of the bulk material being on top of Region opposite the CMOS devices, and wherein the CMOS active devices are shielded from the portion of the bulk material by the region from charge carriers generated by photons in the portion of the bulk material.
  • the difference of this inventive photosensor in contrast to the inventive photosensor mentioned in claim 1 is that here the active CMOS devices are not completely embedded in a doped region and thus completely separated spatially from the rest of the bulk material.
  • this doped region formed as a buried layer.
  • this buried, doped region can essentially perform the same functions as the doped region mentioned in claim 1. In particular, this also for the most part achieves a spatial separation of the CMOS components from the remaining bulk material of the semiconductor substrate.
  • the buried layer can be designed such that it also shields the CMOS components in a corresponding manner from charge carriers generated by incident photons. Again, almost the full wafer thickness can be used to form the photodiode.
  • the choice of one of the two photosensors can depend on several factors. For example, this can also be decided by which production method with respect to the individual process steps that the wafer is finally to go through.
  • the doped region for example horizontally, ie parallel to the wafer Surface can run.
  • the doped region can also emanate from the wafer surface.
  • the doped region has recesses. If, for example, one looks at the wafer surface from above, the doped region may be formed on the surface of the wafer, which, however, is repeatedly interrupted by recesses. These recesses can consist of the same material or have the same doping as the remaining bulk material of the semiconductor substrate, which, viewed from the surface, is located below the doped region.
  • CMOS devices are arranged within the recesses. It is usually sufficient to form the recesses for the provision of photodiode contacts for applying a blocking voltage for the photodiode. As already mentioned above, in this case a further photodiode contact can be applied in the region of the doped region. The blocking voltage of the photodiode is applied between these two photodiode contacts accordingly.
  • a particularly preferred embodiment of the invention provides that an exposure access is formed on the side facing away from the integrated CMOS circuit. This arrangement makes it possible in particular to make full use of the area of the remaining bulk material outside the doped region, which is also a part of the photodiode, for the detection of photons, when it is directly illuminated.
  • the semiconductor substrate has a particularly high purity (with a specific resistance in the order of magnitude of 1 k ⁇ cm or a particularly low density of points), for example made of zone-grown silicon (English: float-zone silicon). is made.
  • the doped region can be made, for example, by ion implantation.
  • the semiconductor substrate without the highly doped region, in particular therefore the remaining bulk material below the highly doped region and the region of the recesses, are preferably lightly doped, and unlike the highly doped region.
  • the doped region may be formed as a highly doped (p +) layer, while the semiconductor substrate or the remaining bulk material is weakly n-doped (n--).
  • n-- n-doped
  • the doped region has a specific resistance in the order of ⁇ cm.
  • the semiconductor substrate in the bulk material outside the doped region may have a resistivity of the order of k ⁇ cm.
  • avalanche effect makes it possible for charge carriers generated by photon radiation to be accelerated and to generate additional charge carrier pairs on their way through collisions. Thus, a charge carrier multiplication takes place, whereby highly sensitive sensors are possible.
  • the photosensor is to be exposed from the back, that is to say on the side opposite the CMOS circuit, then it is advantageous to make the electrically conductive layer of light as transparent as possible.
  • this can basically be accomplished via the thickness of the layer material.
  • the selection of the corresponding materials can also take place additionally with regard to the corresponding wavelengths of the irradiated light.
  • the electrically conductive layer from a metal or, for example, from indium tin oxide (abbreviation: ITO).
  • ITO indium tin oxide
  • a highly doped material such as a (n ++) doped material, may be used to form the electrically conductive layer.
  • This electrically conductive layer can accordingly with a Contacting be provided for applying a voltage.
  • Photons in the optical range typically have a penetration depth of about 10 ⁇ m in a silicon substrate.
  • Infrared (IR) light can generally penetrate deeper, for example, about 30 ⁇ m.
  • IR Infrared
  • the light quantum yield in the infrared range due to the recombination by Storstellen is relatively low. If erfmdungsgegorge highly pure Substratmate ⁇ al used, it is avoided that a large part of the charge carriers generated in the depth in the semiconductor substrate a short time later recombine and thus can not be detected.
  • the light quantum efficiency can be significantly improved in this embodiment of the invention.
  • a photosensor matrix is characterized in that it has a matrix of at least two photosensors according to one of the preceding embodiments.
  • FIG. 1 shows a schematic representation of a photosensor according to the invention
  • Figure 2 is a schematic representation of a
  • Figure 3 is a schematic representation of a
  • Photosensor according to the invention with a doped region as a buried layer
  • FIG. 4 shows a photosensor matrix according to the invention
  • Figure 5 is a schematic representation of a conventional photosensor according to the prior art.
  • FIG. 1 shows a photosensor 1 comprising a semiconductor substrate 2.
  • highly doped (p +) regions have been produced by ion implantation. However, these doped regions 3 do not extend over the entire surface of the substrate 2, but are interrupted by recesses 4.
  • doped wells 5A, 5B have been produced, in which the corresponding CMOS circuits 5 are formed.
  • the CMOS circuits 5 are spatially separated by the corresponding regions 3 from the remaining bulk material of the semiconductor substrate.
  • the remaining bulk material 6 extends into the recesses 4.
  • the doped regions 3 usually have a depth of a few microns, measured from the surface of the substrate on.
  • the substrate 2 usually has a thickness of about 50 ⁇ m.
  • the remaining bulk material 4,6 has a weak (n-) doping. It is virtually completely depopulated by the highly doped (p +) region of charge carriers (electrons). This creates a relatively steep Potential drop in the direction of the side on which the CMOS circuits 5 are located. Photodiodes are through the regions
  • a contact of the respective photodiode represents the p-doped regions 3 and is e.g. set to ground potential.
  • a second contact 8 of the photodiode is in the region of the recess
  • the photodiode is operated in the reverse direction. In this case the contact 8 is set to + 5V. In the region of the recess, the semiconductor material is n-doped (region 9).
  • insulating silicon oxide layers (S1O2) 10, 11 are applied. These serve
  • the wiring planes 12 are regularly realized by aluminum connections 13.
  • the illumination access for the photodiode is located on the side of the substrate 2 opposite the CMOS circuits 5.
  • incident photons generate 15 electron-hole pairs 16, 17. Due to the applied blocking voltage, the electrons 16 travel towards the recess 4 and the photodiode contact 8, respectively, which is e.g. is at + 5V, while the holes 17 are traveling towards the doped region 3, which is e.g. is at ground potential 7. Further, since the substrate 2 is preferably made of silicon material made by the zone-pulling method, the carriers can widely propagate without a high recombination rate in this material.
  • FIG. 2 shows a similar schematic representation of a photosensor 101, which, however, makes use of the avalanche effect.
  • This comprises a semiconductor substrate 102, which also consists of Siliziummatenal, z. B. using the Zonenziehvons was produced. On one side of the silicon wafer were (p +) doped regions educated. In this CMOS circuits 105 are integrated. In between are recesses 104, which are components of the remaining bulk material 106.
  • the photodiode contacts 107, 108 are analogous to FIG. 1, with a corresponding blocking voltage applied to them, for example: contact 107 is connected to ground potential, while contact 108 is for example at +5 V.
  • n-doped region 109 In the region of the recess, there is an n-doped region 109. Overall, the bulk material 106 together with the predominant part of the recess 104 is weakly (n--) -doped.
  • non-conductive SiO 2 layers 110, 111 are applied to the wafer, which are used to insulate interconnections 112 of the CMOS circuits 105, consisting of contact holes 113 and aluminum pads 114.
  • the photons 115 a On the CMOS Circuits 105 opposite side of the wafer are the photons 115 a. On this page is therefore the exposure access. The incident photons 115 again generate the corresponding electron-hole pairs 116, 117.
  • ITO indium tin oxide layer
  • the ITO layer 118 is largely transparent to the incident photons.
  • the incident photons 115 create electron-hole pairs, with the electrons 116 traveling toward the +5 V contact 108 as the holes 117 move toward the -200V ITO layer. Due to the high voltage, the corresponding potential gradient is enormously increased. This greatly accelerated electrons 116 generate by impact more electron-hole pairs. This avalanche-like generation of new charge carrier pairs is referred to as the avalanche effect.
  • FIG. 3 shows a photosensor 201, which is constructed analogously to the photosensor 1 shown in FIG. Also, in Figure 3, the corresponding reference numerals have been selected analogously, but all reference numerals begin with the number 200. However, the structure shows only a difference with respect to the (p + ) -doped region. This doped region 203 is formed as a buried layer.
  • FIG. 4 shows a photosensor matrix 300, which shows by way of example an arrangement of 4 photosensors 301 according to the invention, which were fabricated on a silicon wafer 302.
  • FIG. 5 shows a photosensor 401 according to the prior art, which is therefore already commercially available.
  • This first structure also has a silicon substrate 402.
  • Such a substrate is usually manufactured by means of the Czochralski method.
  • the substrate 402 has a highly doped (n +) layer.
  • the corresponding CMOS circuits 405 are incorporated.
  • this highly doped (n +) layer 403 may also have passive components.
  • the highly doped (n +) layer 403 is connected to the ground potential via a corresponding contact 407, while the p-type doping 409 within the (n +) -doped layer 403 via a contact 408 on +5 V is.
  • Insulating layers of silicon dioxide (SiO 2 ) 410, 411 and 411A are deposited on the side on which the CMOS circuits 405 are located. These layers include interconnections 412 for the CMOS circuits with conductive channels 413 and aluminum interconnects 414 and corresponding aluminum pads, respectively. The illumination of the photosensor takes place via the side on which the corresponding CMOS circuits 405 are located.
  • the remaining bulk material 406 which in this case is (p-) -doped, that is weakly p-doped.
  • the photons 415 can penetrate the silicon oxide layers and generate in the highly doped (n +) layer 403 or in the remaining (p -) - doped bulk material 406 generate electron-hole pairs 416, 417.
  • Some of the electrons 416 migrate correspondingly to the heavily doped layer 403, which is grounded, while the corresponding holes 417 migrate toward the +5 V contact 408.
  • Some of the electron-hole pairs 416, 417 that were generated too deep in the bulk data 406 recombine because the path they had to travel to the heavily doped layer 403 is too far.
  • the photodiode is formed between the region 409 and the (n +) doped layer 403, which does not extend over the complete bulk material.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Light Receiving Elements (AREA)

Abstract

L'invention concerne un photodétecteur (1, 101) comportant au moins un circuit CMOS (5, 105) intégré dans un substrat de semiconducteur (2, 102, 202), des composants CMOS actifs et une photodiode réalisée dans le matériau semiconducteur. Le but de l'invention est de permettre l'obtention d'un rendement quantique élevé. A cet effet, la photodiode est réalisée à partir d'une zone dopée (3, 103) se trouvant dans le substrat de semiconducteur et du matériau en vrac restant (6, 106) du substrat de semiconducteur, les composants CMOS actifs étant spatialement séparés du matériau en vrac restant du substrat de semiconducteur par la zone dopée. L'invention concerne également une matrice de photodétecteurs (300).
PCT/EP2010/000182 2009-02-20 2010-01-15 Photodétecteur et matrice de photodétecteurs WO2010094374A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE200910009814 DE102009009814A1 (de) 2009-02-20 2009-02-20 Photosensor und Photosensormatrix
DE102009009814.3 2009-02-20

Publications (1)

Publication Number Publication Date
WO2010094374A1 true WO2010094374A1 (fr) 2010-08-26

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9410901B2 (en) * 2014-03-17 2016-08-09 Kla-Tencor Corporation Image sensor, an inspection system and a method of inspecting an article

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040005729A1 (en) * 2002-03-19 2004-01-08 Takashi Abe Solid state image pickup device and method of producing solid state image pickup device
US20060043519A1 (en) * 2004-08-31 2006-03-02 Sony Corporation Solid-state imaging device, camera module and electronic equipment module
US20080217723A1 (en) * 2007-03-08 2008-09-11 Teledyne Licensing, Llc Backside illuminated cmos image sensor with pinned photodiode
US20080224181A1 (en) * 2007-03-14 2008-09-18 Shinji Uya Back irradiating type solid state imaging device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040005729A1 (en) * 2002-03-19 2004-01-08 Takashi Abe Solid state image pickup device and method of producing solid state image pickup device
US20060043519A1 (en) * 2004-08-31 2006-03-02 Sony Corporation Solid-state imaging device, camera module and electronic equipment module
US20080217723A1 (en) * 2007-03-08 2008-09-11 Teledyne Licensing, Llc Backside illuminated cmos image sensor with pinned photodiode
US20080224181A1 (en) * 2007-03-14 2008-09-18 Shinji Uya Back irradiating type solid state imaging device

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