WO2010082625A1 - Information pattern carrier and method for optically reading information pattern - Google Patents
Information pattern carrier and method for optically reading information pattern Download PDFInfo
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- WO2010082625A1 WO2010082625A1 PCT/JP2010/050412 JP2010050412W WO2010082625A1 WO 2010082625 A1 WO2010082625 A1 WO 2010082625A1 JP 2010050412 W JP2010050412 W JP 2010050412W WO 2010082625 A1 WO2010082625 A1 WO 2010082625A1
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- core
- information pattern
- semiconductor quantum
- light
- information
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- 238000000034 method Methods 0.000 title claims description 29
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- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 9
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Images
Classifications
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- B42—BOOKBINDING; ALBUMS; FILES; SPECIAL PRINTED MATTER
- B42D—BOOKS; BOOK COVERS; LOOSE LEAVES; PRINTED MATTER CHARACTERISED BY IDENTIFICATION OR SECURITY FEATURES; PRINTED MATTER OF SPECIAL FORMAT OR STYLE NOT OTHERWISE PROVIDED FOR; DEVICES FOR USE THEREWITH AND NOT OTHERWISE PROVIDED FOR; MOVABLE-STRIP WRITING OR READING APPARATUS
- B42D25/00—Information-bearing cards or sheet-like structures characterised by identification or security features; Manufacture thereof
- B42D25/30—Identification or security features, e.g. for preventing forgery
- B42D25/305—Associated digital information
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/56—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing sulfur
- C09K11/562—Chalcogenides
- C09K11/565—Chalcogenides with zinc cadmium
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B42—BOOKBINDING; ALBUMS; FILES; SPECIAL PRINTED MATTER
- B42D—BOOKS; BOOK COVERS; LOOSE LEAVES; PRINTED MATTER CHARACTERISED BY IDENTIFICATION OR SECURITY FEATURES; PRINTED MATTER OF SPECIAL FORMAT OR STYLE NOT OTHERWISE PROVIDED FOR; DEVICES FOR USE THEREWITH AND NOT OTHERWISE PROVIDED FOR; MOVABLE-STRIP WRITING OR READING APPARATUS
- B42D25/00—Information-bearing cards or sheet-like structures characterised by identification or security features; Manufacture thereof
- B42D25/20—Information-bearing cards or sheet-like structures characterised by identification or security features; Manufacture thereof characterised by a particular use or purpose
- B42D25/29—Securities; Bank notes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D11/00—Inks
- C09D11/50—Sympathetic, colour changing or similar inks
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D11/00—Inks
- C09D11/52—Electrically conductive inks
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/57—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing manganese or rhenium
- C09K11/572—Chalcogenides
- C09K11/574—Chalcogenides with zinc or cadmium
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/58—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing copper, silver or gold
- C09K11/582—Chalcogenides
- C09K11/584—Chalcogenides with zinc or cadmium
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/88—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B42D—BOOKS; BOOK COVERS; LOOSE LEAVES; PRINTED MATTER CHARACTERISED BY IDENTIFICATION OR SECURITY FEATURES; PRINTED MATTER OF SPECIAL FORMAT OR STYLE NOT OTHERWISE PROVIDED FOR; DEVICES FOR USE THEREWITH AND NOT OTHERWISE PROVIDED FOR; MOVABLE-STRIP WRITING OR READING APPARATUS
- B42D25/00—Information-bearing cards or sheet-like structures characterised by identification or security features; Manufacture thereof
- B42D25/30—Identification or security features, e.g. for preventing forgery
- B42D25/36—Identification or security features, e.g. for preventing forgery comprising special materials
- B42D25/378—Special inks
- B42D25/382—Special inks absorbing or reflecting infrared light
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B42D—BOOKS; BOOK COVERS; LOOSE LEAVES; PRINTED MATTER CHARACTERISED BY IDENTIFICATION OR SECURITY FEATURES; PRINTED MATTER OF SPECIAL FORMAT OR STYLE NOT OTHERWISE PROVIDED FOR; DEVICES FOR USE THEREWITH AND NOT OTHERWISE PROVIDED FOR; MOVABLE-STRIP WRITING OR READING APPARATUS
- B42D25/00—Information-bearing cards or sheet-like structures characterised by identification or security features; Manufacture thereof
- B42D25/30—Identification or security features, e.g. for preventing forgery
- B42D25/36—Identification or security features, e.g. for preventing forgery comprising special materials
- B42D25/378—Special inks
- B42D25/387—Special inks absorbing or reflecting ultraviolet light
Definitions
- the present invention relates to an information recording medium on which an information pattern such as a barcode or a QR code is printed, an information pattern carrier such as a management target, and an optical reading method of the information pattern.
- Patent Document 1 prints an information pattern such as a barcode containing a phosphor, irradiates the information pattern with a semiconductor laser to excite the phosphor, receives light emitted from the phosphor, and optically transmits the information pattern.
- An optical reader that reads with a reader is disclosed.
- this apparatus when reading, since the wavelength peaks of the excitation light from the semiconductor laser diode and the fluorescence from the phosphor are separated from each other, only the emission spectrum of the phosphor can be read.
- this security system since it is difficult to forge the phosphor mark and the technology for reading the phosphor mark is difficult to forge, it is possible to provide relatively high security.
- Patent Document 2 proposes an optical reading system using a light emitting diode, which can be made smaller and less expensive than an apparatus using a semiconductor laser diode.
- This optical reading system optically reads a printed layer printed with invisible ink, and the phosphor is made of an inorganic oxide to which neodymium is added as an activation element.
- the light emission center wavelength of the light emitting element that excites the phosphor is separated from the wavelength region in which the light receiving element that receives the fluorescence from the printing layer can receive light.
- Patent Document 3 in an optical data carrier containing metal particles, an increase in the volume of the data carrier due to thermal expansion as a result of the absorption of radiation causes a shift of the absorbed light to a longer wavelength. It is disclosed.
- the inventor of the present application can adopt light from a light emitting diode as excitation light, can be miniaturized, can be an inexpensive optical reading system, has a strong light emission from a phosphor, and is a method different from Patent Document 1.
- the inventors have eagerly searched for a printing layer and an optical reading method that can receive light emitted from a printing layer (information pattern) excited by excitation light and can avoid receiving excitation light.
- the inventor of the present application pays attention to the shift of the wavelength to the longer wavelength side due to thermal expansion in Patent Document 3, and uses this for avoiding reception of excitation light at the time of reading, and is one step higher for the invisible information pattern. Accumulated thoughts to gain security.
- the present invention has been devised in view of the above circumstances.
- the object of the present invention is to provide a barcode or QR formed on an information pattern carrier such as an information recording medium or a management object so that it cannot be recognized with the naked eye. It is extremely difficult to maliciously develop an optical reading device that can clearly read information patterns such as codes when reading, and can read the information of this information pattern even if it notices the existence of the information pattern,
- An object of the present invention is to provide an information pattern carrier and an information pattern optical reading method capable of realizing a high security system and realizing invisible traceability that provides high quality assurance.
- An information pattern carrier of the present invention includes an information pattern formed of a colored ink containing core / shell type semiconductor quantum dots, and a mask which is formed on the information pattern to make the information pattern invisible. Yes.
- the information pattern is configured so that the semiconductor quantum dot emits light having a wavelength that has been thermally expanded and shifted to the longer wavelength side when irradiated with an excitation light having energy higher than the band gap of the semiconductor quantum dot. ing.
- the information pattern carrier of the present invention is formed of a colored ink containing core / shell type semiconductor quantum dots, and is made the same color as the color of the ground color of the information recording medium or management object or the underlying colored layer.
- the information pattern is made invisible.
- the information pattern is configured so that the semiconductor quantum dot emits light having a wavelength that has been thermally expanded and shifted to the longer wavelength side when irradiated with an excitation light having energy higher than the band gap of the semiconductor quantum dot. ing.
- An information pattern carrier such as an information recording medium or an object to be managed has an information pattern printed thereon with a colored ink and formed in an invisible state.
- the semiconductor quantum dots are excited by excitation light during reading to thermally expand, and light having a wavelength transitioning to the long wavelength side that is emitted at that time is received to decode the information. For this reason, since the information pattern is visible when the carrier is manufactured, it is easy to form the pattern. After the manufacturing, the information pattern is invisible, so that the presence of the information pattern is not noticed except during reading.
- the core / shell type semiconductor quantum dot emits strong light, and the wavelength region of the light is greatly separated from the excitation light by the transition of the emission wavelength due to thermal expansion. Is clearly read.
- the emission wavelength is changed, it is difficult to imitate the reading device.
- the colored ink enhances the heat absorbability due to the irradiation of excitation light, and the temperature easily changes, so that the semiconductor quantum dots are easily expanded. It is difficult to easily imitate / manufacture colored ink, and security can be improved. Therefore, the information pattern can be reliably decoded by the optical reading device that can compensate for the handling in which the information pattern cannot be recognized with the naked eye and can decode the shifted wavelength.
- the colored ink is preferably colored with any colorant of dyes, leuco dyes or pigments having a particle size of submicron. By using these colorants, coloring that absorbs visible light can be easily obtained without inhibiting the irradiation of the excitation light to the semiconductor quantum dots by adjusting the concentration.
- the core / shell type semiconductor quantum dots have CdSe / ZnS as a core. Since it can disperse
- Core / shell type semiconductor quantum dots A core obtained by adding Te to ZnSe nanoparticles, and a shell of ZnS nanoparticles, (B) (Zn (1-2 x ) In x Ag x S) is used as a core or shell; (C) Core ZnS nanoparticles containing Mn ions, (D) using ZnS nanoparticles as a core, (E) using Zn—In—Ag—S based semiconductor nanoparticles as a core; (F) silicon nanoparticles as the core or shell, It is also preferable that it is any one of these.
- these semiconductor quantum dots strong light emission and wavelength transition due to thermal expansion of the semiconductor quantum dots can be suitably obtained.
- Core / shell type semiconductor quantum dots (G) Using silicon nanoparticles as a core and erbium as a shell, (H) Erbium as a core and silicon nanoparticles as a shell, It is also preferable that it is any one of these. Since erbium has a high coefficient of thermal expansion, the wavelength transition increases when the semiconductor quantum dot expands greatly when thermally expanded. Therefore, information can be read more clearly and security can be improved.
- the optical reading method of the present invention is made invisible by forming a colored ink containing core / shell type semiconductor quantum dots on an information recording medium or an object to be managed, and forming a mask thereon.
- An information pattern optical reading method in which the semiconductor quantum dot is thermally expanded by irradiating the information pattern with an excitation light whose energy is higher than the band gap of the semiconductor quantum dot, and the long wavelength side from the thermally expanded semiconductor quantum dot The light having the wavelength shifted to is emitted, the emitted light is received by an optical sensor having sensitivity to the shifted long wavelength side portion, and the information pattern is read.
- Another optical reading method of the present invention is formed with a colored ink containing core / shell type semiconductor quantum dots on an information recording medium or a management object, and is made the same color as the ground color or the color of the underlying colored layer.
- An optical reading method for an information pattern that is made invisible by irradiating the semiconductor quantum dot with an excitation beam having energy higher than the band gap of the semiconductor quantum dot to thermally expand the semiconductor quantum dot.
- Light having a wavelength shifted to the long wavelength side is emitted from the dot, and the emitted light is received by an optical sensor having sensitivity to the shifted long wavelength side portion, and the information pattern is read.
- An information pattern printed on an information pattern carrier such as an information recording medium or an object to be managed is printed with colored ink, and is invisible.
- the semiconductor quantum dots are excited by excitation light to thermally expand, and light is emitted at that time.
- the core / shell type semiconductor quantum dot emits strong light, and the wavelength region of the light is greatly separated from the excitation light by the transition of the light emission wavelength due to thermal expansion, so that the excitation light is not read. Information is clearly read. Further, since the emission wavelength is changed, it is difficult to imitate the reading device.
- the colored ink enhances the heat absorbability due to the irradiation of excitation light, and the temperature easily changes, so that the semiconductor quantum dots are easily expanded. It is difficult to easily imitate / manufacture colored ink, and security can be improved. Therefore, the information pattern can be reliably decoded by the optical reading device that can compensate for the handling in which the information pattern cannot be recognized with the naked eye and can decode the shifted wavelength.
- the colored ink is colored with any one of a dye, a leuco dye, or a pigment having a particle size of submicron.
- a dye a leuco dye, or a pigment having a particle size of submicron.
- the core / shell type semiconductor quantum dots have CdSe / ZnS as a core. Since it can disperse
- Core / shell type semiconductor quantum dots A core obtained by adding Te to ZnSe nanoparticles, and a shell of ZnS nanoparticles, (B) (Zn (1-2 x ) In x Ag x S) is used as a core or shell; (C) Core ZnS nanoparticles containing Mn ions, (D) using ZnS nanoparticles as a core, (E) using Zn—In—Ag—S based semiconductor nanoparticles as a core; (F) silicon nanoparticles as the core or shell, It is also preferable that it is any one of these.
- these semiconductor quantum dots strong light emission and wavelength transition due to thermal expansion of the semiconductor quantum dots can be suitably obtained.
- Core / shell type semiconductor quantum dots (G) Using silicon nanoparticles as a core and erbium as a shell, (H) Erbium as a core and silicon nanoparticles as a shell, It is also preferable that it is any one of these. Since erbium has a high coefficient of thermal expansion, the wavelength transition increases when the semiconductor quantum dot expands greatly when thermally expanded. Therefore, information can be read more clearly and security can be improved.
- the information pattern carrier such as the information recording medium or the management object is printed with the colored ink and is made invisible by the mask or the colored ink having the same color as the carrier.
- the semiconductor quantum dots are thermally expanded while being excited by excitation light at the time of reading, and light having a wavelength that shifts to the long wavelength side that is emitted at that time is received to decode the information. For this reason, since the information pattern is invisible after manufacture, the presence of the information pattern is not noticed except during reading.
- the core / shell type semiconductor quantum dot When reading, the core / shell type semiconductor quantum dot emits strong light, and the wavelength of the emitted light is shifted by thermal expansion, so the wavelength region is far away from the excitation light, so the information is clear without reading the excitation light. To be read. Further, since the emission wavelength is changed, it is difficult to imitate the reading device.
- the colored ink enhances the heat absorbability due to the irradiation of excitation light, and the temperature easily changes, so that the semiconductor quantum dots are easily expanded. It is difficult to easily imitate / manufacture colored ink, and security can be improved. Therefore, the information pattern can be reliably decoded by the optical reading device that can compensate the handling in which the information pattern cannot be recognized with the naked eye and can decode the shifted wavelength.
- FIG. 1 is a schematic view of a reading apparatus for carrying out the optical reading method of the first embodiment.
- FIG. 2 is a graph showing the relationship between the wavelength and intensity of light emitted by exciting semiconductor quantum dots at room temperature.
- FIG. 3 is a graph showing the relationship between the wavelength and intensity of light emitted by expanding and exciting semiconductor quantum dots.
- FIG. 4 is a schematic view of a reading apparatus for carrying out the optical reading method of the second embodiment.
- FIG. 5 is a schematic view of a reading apparatus for carrying out the optical reading method of the third embodiment.
- FIG. 6 is a graph showing the relationship between the wavelength and intensity of light emitted by exciting the semiconductor quantum dots by heat shrinking according to the optical reading method of the third embodiment.
- FIG. 1 is a schematic diagram of a reading apparatus for carrying out the information pattern carrier and the optical reading method of the present embodiment.
- the reading device 1 is for reading information on the information recording card 10 ⁇ / b> A, and generally includes a light emitting diode 15 and an optical reading mechanism 2.
- the information recording card 10A includes an information recording medium 11 and an information pattern carrier 11A on the information recording medium 11.
- the information pattern carrier 11A makes the information pattern 12 invisible by printing the information pattern 12 such as a visible barcode or QR code printed on the information pattern 12 after printing the information pattern 12. And a mask printing body 13 for the purpose.
- the information recording card 10A is in the form of a card on which information is recorded. For example, a cash card, various prepaid cards, a telephone card, a traffic card, a health insurance card, or the like is applied.
- the information recording medium 11 is a main body of the information recording card 10A on which the information pattern 12 is printed.
- the information recording medium 11 is made of a vinyl chloride sheet or the like in which a white pigment such as titanium oxide is dispersed and held, and has a property of reflecting infrared rays, visible rays, and ultraviolet rays.
- the information pattern 12 is formed by printing on the information recording medium 11 with colored ink containing core / shell type semiconductor quantum dots.
- the colored ink includes semiconductor quantum dots, a coloring material, and a binder for dispersing and holding them.
- Semiconductor quantum dots are nanometer-sized semiconductor fine particles.
- the core / shell type refers to a type in which a core made of an inner material is covered with a shell made of an outer material.
- a CdSe / ZnSe core / shell type semiconductor quantum dot is used.
- the colorant is a material that absorbs visible light.
- the coloring material is a dye, a leuco pigment, or a pigment having a particle size of submicron, and includes a concentration that does not hinder the irradiation of the excitation light to the core / shell type semiconductor quantum dots. Suppose that By using these colorants and adjusting the concentration, it is possible to easily obtain a color that does not inhibit irradiation and a color that absorbs visible light.
- the particle size of the pigment is submicron (less than 1 ⁇ m), preferably the particle diameter is in the range of 0.6 to 0.8 ⁇ m, it can retain translucency like a color filter, so that a colored ink other than black is used. In this case, it is particularly preferable to use an appropriate amount of pigment having a particle size in the range of 0.6 to 0.8 ⁇ m.
- the colored ink is black ink using carbon black as a coloring material.
- the information pattern is made invisible by forming an opaque mask 13 on the information pattern 12.
- invisible means that it is almost impossible to see with the eye or cannot be seen at all (including so-called invisible).
- the mask 13 is formed by mask printing in which the pattern is painted over the entire surface with the same color as the information pattern 12.
- the mask printing uses printing that does not absorb or block the excitation light H1 so as not to inhibit the excitation of the information pattern 12 by the excitation light H1.
- the coloring material for printing that does not absorb the excitation light H1 includes a dye, a leuco dye, or a pigment having a submicron particle size.
- a masking film (not shown) is formed on the mask printing, and the ink forming the mask printing cannot be removed.
- the information recording card 10A is configured to be able to scan and move relative to the light-emitting diode 15 and the optical sensor 16 in a straight line.
- the scanning movement is performed by a mechanical mechanism (not shown) provided in the optical reading mechanism 2, but may be performed by a manual operation.
- the light emitting diode 15 irradiates the core / shell type semiconductor quantum dots included in the information pattern 12 with the excitation light H1.
- the light emitting diode 15 is selected so that the excitation light H1 has higher energy than the band gap of the semiconductor quantum dots.
- the core / shell type semiconductor quantum dots included in the information pattern 12 are excited by the irradiation of the excitation light H1, and the thermal expansion of the semiconductor quantum dots also occurs.
- the optical reading mechanism 2 includes an optical sensor 16 and an information determination unit 17.
- the optical sensor 16 receives the light beam H2 emitted when the core / shell type semiconductor quantum dots included in the information pattern 12 are excited.
- the optical sensor 16 has a wavelength of a long wavelength side portion of light emitted by shifting to the long wavelength side in a state where the information pattern 12 including the core / shell type semiconductor quantum dots is thermally expanded, specifically, as shown in FIG. It is necessary to have sensitivity in the range Y on the long wavelength side.
- a photodiode is used for the optical sensor 16.
- the optical sensor 16 is configured to receive light emitted from the information pattern 12 when the time required for the temperature rise of the information pattern 12 has elapsed.
- the temperature before the information pattern 12 is heated and the temperature after the information pattern 12 are heated can be measured by, for example, a radiation temperature sensor directed to the information pattern 12, and the temperature before the information pattern 12 is heated (for example, 15 ° C. to 30 ° C.). ° C) to a temperature after heating (for example, 60 ° C to 85 ° C), and light reception is performed at this time.
- the information determination unit 17 amplifies an electrical signal (rectangular signal) obtained by receiving light by the optical sensor 16 and forms an electrical code information signal corresponding to the code information of the information pattern 12.
- the light emitting diode 15 emits light, and the information The pattern 12 is irradiated with excitation light H1 having energy higher than the band gap of the semiconductor quantum dots.
- the excitation light H1 excites the semiconductor quantum dots and heats the information pattern 12 to thermally expand the semiconductor quantum dots.
- Excited semiconductor quantum dots emit light whose wavelength has shifted due to thermal expansion. Specifically, when the CdSe / ZnSe core / shell type semiconductor quantum dots including those having different particle diameters are excited without being thermally expanded, as shown in FIG. A plurality of lights having different wavelengths are emitted every time. On the other hand, when excited in a thermally expanded state, as shown in FIG. 3, it emits light whose wavelength has greatly shifted to the long wavelength side. Even when the core particles of the core / shell type semiconductor quantum dots have a single particle diameter, the relationship in which the wavelength is largely shifted to the longer wavelength side by thermal expansion is the same. Since the semiconductor quantum dot is a core / shell type of CdSe / ZnSe, the obtained light emission is particularly strong.
- the light emitted from the semiconductor quantum dots is received by the optical sensor 16 having sensitivity to the long wavelength side portion Y and converted into an electrical signal.
- the information determination unit 17 patterns this electrical signal and checks whether the information pattern 12 can be read, and further checks whether the code information of the information pattern 12 matches the data recorded in the database. The authenticity of the information pattern 12 is determined.
- the information pattern 12 can be excited by a normal inexpensive light emitting diode 15 and strong light can be emitted from the semiconductor quantum dots (quantum size effect).
- semiconductor quantum dots are excited with thermal expansion and light emission is shifted to the long wavelength side, information patterns can be clearly detected without the excitation light and light emission overlapping, and ordinary inexpensive silicon photodiodes It is possible to detect with high sensitivity by a light receiving element such as.
- the optical reading device 1 has a configuration in which the light emitted from the semiconductor quantum dots is shifted to the long wavelength side to emit light, and thus the optical sensor having sensitivity to the long wavelength side portion receives the emitted light and decodes the information. For this reason, it is difficult to imitate the optical reading device, and an optical reading method that provides high security or quality assurance can be realized. As a result, it is possible to prevent forgery, alteration, and tampering of credit cards, cash cards, telephone cards, ID cards, student ID cards, stamp cards, point cards, etc., and to reduce the size and space of the system. Invisible traceability can be realized.
- An information pattern such as a barcode or QR code is formed in an invisible state on the information recording medium 11 so that the information pattern is not recognized with the naked eye.
- the ink of this embodiment is imitated. Manufacturing is difficult.
- the light source of the information pattern is a core / shell type semiconductor quantum dot, and based on that we developed a reading device that can receive light emitted by normal excitation of the semiconductor quantum dot and decode the information
- the wavelength of the emitted light is shifted to the longer wavelength side, the information pattern cannot be decoded by such a normal reading device.
- the information pattern 12 is printed on the information recording medium 11 with the colored ink, the information pattern 12 is visible, so that the printed pattern can be easily confirmed.
- the temperature of the information pattern 12 is likely to increase due to the irradiation of excitation light, and the semiconductor quantum dots are likely to thermally expand.
- the heat absorption due to irradiation of excitation light is good. Since it is difficult to easily imitate and manufacture the composition of the colored ink, high security can be realized in this respect.
- the information pattern 12 is printed using ink colored with a pigment having a particle size of submicron, the information pattern 12 having high weather resistance and fading resistance can be obtained with respect to the color.
- the high chemical stability of shell-type semiconductor quantum dots it is possible to realize a system that provides high quality assurance over a long period of time.
- CdSe / ZnS core / shell type semiconductor quantum dots are used for the colored ink, it can be dispersed well with toluene or the like and does not aggregate, and it can be used as an ink and can print information patterns well. .
- the reading device may be provided with heating means for thermally expanding the semiconductor quantum dots.
- heating means for thermally expanding the semiconductor quantum dots.
- an electric heater for applying high heat to the lower side of the information recording card 10 on which the information pattern 12 is printed as a heating means and thermally expanding the semiconductor quantum dots of the information pattern 12 may be provided.
- a means for irradiating the information pattern 12 with heat rays may be provided as a heating means.
- the excitation light H1 of the light emitting diode 15 may be condensed via the condenser lens and irradiated to the information pattern 12.
- the light emitting diode 15 one having a high output may be selected, a plurality of light emitting diodes may be used for irradiation, or a light emitting diode that emits infrared light and a light emitting diode that emits ultraviolet light may be used in combination.
- an information pattern of a management target object other than a card shape may be read.
- management objects include products other than cards and barcodes, QRs, etc. printed as information patterns 12, such as books with a spine on a book or a sticker printed with information patterns 12. There is.
- FIG. 4 is a schematic view of a reading apparatus for carrying out the optical reading method of the second embodiment.
- the information recording card 10B of this embodiment includes an information pattern carrier 11B.
- the information pattern carrier 11B is printed on the information recording medium (or management target) 11 and the base on which the information recording medium 11 is printed but does not form an information pattern.
- a printing layer 14 and an information pattern 12 such as a barcode or QR code printed on the information recording medium 11 are provided.
- symbol is attached
- the information pattern 12 is made invisible by making the color of the information pattern 12 the same as the color of the ground colored printing layer 14 that is printed on the information recording medium 11 before the information pattern 12. is doing.
- the color ink used for the information pattern 12 is the same color as that of the base print layer 14. That is, both the base printing layer 14 and the information pattern 12 use a carbon black pigment having a particle size of submicron.
- the information pattern 12 is handled in an invisible state except at the time of reading, and at the time of reading, since the colored ink absorbs visible light, the information pattern 12 is irradiated by excitation light. 12 easily rises in temperature, and the semiconductor quantum dots are likely to thermally expand, thereby enabling reading. Further, since it is difficult to easily imitate or manufacture the composition of the colored ink, high security can be realized also in this respect.
- the base print layer 14 is omitted, and the color of the information pattern 12 is set to the same color as the ground color of the surface on which the information recording medium 11 or the information pattern 12 of the management target is printed. 12 may be invisible.
- the same coloring material as the pigment kneaded in the material of the information recording card 10B may be used for the colored ink of the information pattern 12, and the information pattern 12 may be directly printed on the information recording card 10B.
- FIG. 5 is a schematic view of a reading apparatus for carrying out the optical reading method of the third embodiment.
- a cooling unit 3 that thermally contracts the semiconductor quantum dots by cooling the semiconductor quantum dots is provided.
- symbol is attached
- the cooling means 3 cools the information pattern 12 and cools the semiconductor quantum dots.
- the cooling means 3 is an electric cooler provided adjacent to or in contact with the surface of the information recording medium 11 on which the information pattern 12 is not printed, and can be cooled to a temperature of ⁇ 10 to 0 ° C. is there.
- the optical sensor 16A provided in the optical reading mechanism 2A a sensor having sensitivity in the wavelength region indicated by Ya shown in FIG. 6 which is a range deviated from the wavelength region shown in FIG. 2 to the short wavelength side is used.
- the cooling unit 3 cools the information pattern 12 and causes the semiconductor quantum dots to thermally contract. Then, the light emitting diode 15 emits light, and the information pattern 12 is irradiated with excitation light H1 having energy higher than the band gap of the semiconductor quantum dots.
- the semiconductor quantum dots subjected to heat shrinkage emit light having a wavelength that shifts to the short wavelength side shown in FIG. 6 as compared to the wavelength emitted from the semiconductor quantum dots when not thermally contracted (FIG. 2). This emitted light is received by the optical sensor 16A having sensitivity to the long wavelength side portion Ya, and an electric signal is generated.
- the information determination unit 17 patterns this electrical signal and checks whether the information pattern 12 can be read, and further checks whether the code information of the information pattern 12 matches the data recorded in the database. The authenticity of the information pattern 12 is determined.
- the core / shell type semiconductor quantum dot that is the light emission source of the information pattern 12 is excited so as to be accompanied by thermal contraction, and the light emission at that time is shifted to the short wavelength side. Since the optical sensor that has sensitivity to the part receives this emitted light and decodes the information, the information can be decoded for the first time by using a special optical reading device, which further enhances security or quality assurance. The system to give can be realized.
- the cooling unit 3 may be a unit that blows low-temperature air or low-temperature gas as long as the information pattern 12 and the information recording card 11 are not damaged.
- the present invention is not limited to the above-described embodiments, but includes variously modified forms within the technical scope without departing from the gist of the invention described in the claims.
- CdSe / ZnSe core / shell type semiconductor quantum dots are used.
- security information is printed with visible ink containing the following core / shell type semiconductor quantum dots, good.
- A a core / shell type semiconductor quantum dot having a core obtained by adding Te to ZnSe nanoparticles and a shell containing ZnS nanoparticles;
- B a core / shell type semiconductor quantum dot in which the core / shell type semiconductor quantum dot has ZnS nanoparticles containing Mn ions as a core;
- C ZnS nanoparticles doped with In 3+ and Ag + (Zn (1-2 x ) In x Ag x S) by thermally decomposing a thiol complex containing Zn 2+ , In 3+ and Ag + Core / shell type semiconductor quantum dots,
- D a core / shell type semiconductor quantum dot whose core is a ZnS nanoparticle containing Mn ions;
- E A core / shell semiconductor quantum dot having Zn—In—Ag—S based semiconductor nanoparticles as a core, or
- the core / shell type semiconductor quantum dots contained in the visible ink are: (G) a core / shell type semiconductor quantum dot having silicon nanoparticles as a core and erbium as a shell, or (H) A core / shell type semiconductor quantum dot having erbium as a core and silicon nanoparticles as a shell may be used.
- the thermal expansion coefficient of erbium is 7.6 ⁇ 10 ⁇ 6 / ° C. at 20 ° C., which is about three times the thermal expansion coefficient of silicon, which is 2.5 ⁇ 10 ⁇ 6 / ° C. at 20 ° C. Therefore, it is most preferable to use erbium in order to realize wavelength shift due to expansion.
- the silicon nanoparticles are preferably 1.9 nm to 4.3 nm, and the erbium nanoparticles are preferably 1.9 nm to 4.3 nm.
- the semiconductor quantum dots are dispersed in water and the water temperature is increased within a range of 22 ° C. to 90 ° C., and then excitation light having a wavelength of 325 nm is used. It has been confirmed that light emission with a wavelength of 720 to 740 nm can be obtained from semiconductor quantum dots.
- the erbium nanoparticles When erbium nanoparticles are used as the core and silicon nanoparticles are used as the shell, the erbium nanoparticles should be 1.9 nm to 4.3 nm, and the silicon nanoparticles should be 1.9 nm to 4.3 nm. preferable.
- the semiconductor quantum dots are dispersed in water and the water temperature is increased in the range of 22 ° C. to 90 ° C., and then excitation at a wavelength of 325 nm is performed. It has been confirmed that strong light emission with a wavelength of 720 to 740 nm can be obtained from semiconductor quantum dots when irradiated with light.
- silicon nanoparticles having oxygen doped on the surface, or silicon oxide nanoparticles whose inside is oxidized are used as a core or shell, and a core / shell type semiconductor quantum dot using erbium as a shell or core, This is preferable because it emits stronger light.
- the core / shell type semiconductor quantum dot having silicon nanoparticles as the core a plurality of hydrocarbon groups are bonded to respective Si atoms in the silicon nanoparticles, and the surface of the Si atoms is covered with the hydrocarbon groups.
- This semiconductor quantum dot can prevent a decrease in emission wavelength and emission efficiency, and can emit visible light by ultraviolet excitation. Further, preferably it is possible to adjust the particle size by the reaction conditions of the Mg 2 Si and SiCl 4 (silicon tetrachloride).
- the present invention can be used not only for authenticating various cards, but also for reading traceable visual information for tracking product items. Note that the present invention does not exclude using a semiconductor laser diode as a light source of excitation light.
- the present invention can prevent counterfeiting, falsification, and falsification of cards and certificates, and can reduce the size and space of the system, realize invisible traceability, and in fields where information retention is required. It can contribute widely.
Abstract
Description
(a)ZnSeナノ粒子にTeを加えたものをコアとし、ZnSナノ粒子をシェルとする、
(b)(Zn(1-2x)InxAgxS)をコア又はシェルとする、
(c)Mnイオンを含んだZnSナノ粒子をコアとする、
(d)ZnSナノ粒子をコアとする、
(e)Zn-In-Ag-S系半導体ナノ粒子をコアとする、
(f)シリコンナノ粒子をコア又はシェルとする、
のいずれか1つであることも好ましい。これらの半導体量子ドットを用いることで、強い発光と、半導体量子ドットの熱膨張による波長の遷移が好適に得られる。 Core / shell type semiconductor quantum dots
(A) A core obtained by adding Te to ZnSe nanoparticles, and a shell of ZnS nanoparticles,
(B) (Zn (1-2 x ) In x Ag x S) is used as a core or shell;
(C) Core ZnS nanoparticles containing Mn ions,
(D) using ZnS nanoparticles as a core,
(E) using Zn—In—Ag—S based semiconductor nanoparticles as a core;
(F) silicon nanoparticles as the core or shell,
It is also preferable that it is any one of these. By using these semiconductor quantum dots, strong light emission and wavelength transition due to thermal expansion of the semiconductor quantum dots can be suitably obtained.
(g)シリコンナノ粒子をコアとし、エルビウムをシェルとする、
(h)エルビウムをコアとし、シリコンナノ粒子をシェルとする、
のいずれか1つであることも好ましい。エルビウムは熱膨張率が高いので、半導体量子ドットを熱膨張させた際に大きく膨張することで波長の遷移が大きくなる。そのため、より情報を鮮明に読み取ることができ、セキュリティを高めることができる。 Core / shell type semiconductor quantum dots
(G) Using silicon nanoparticles as a core and erbium as a shell,
(H) Erbium as a core and silicon nanoparticles as a shell,
It is also preferable that it is any one of these. Since erbium has a high coefficient of thermal expansion, the wavelength transition increases when the semiconductor quantum dot expands greatly when thermally expanded. Therefore, information can be read more clearly and security can be improved.
(a)ZnSeナノ粒子にTeを加えたものをコアとし、ZnSナノ粒子をシェルとする、
(b)(Zn(1-2x)InxAgxS)をコア又はシェルとする、
(c)Mnイオンを含んだZnSナノ粒子をコアとする、
(d)ZnSナノ粒子をコアとする、
(e)Zn-In-Ag-S系半導体ナノ粒子をコアとする、
(f)シリコンナノ粒子をコア又はシェルとする、
のいずれか1つであることも好ましい。これらの半導体量子ドットを用いることで、強い発光と、半導体量子ドットの熱膨張による波長の遷移が好適に得られる。 Core / shell type semiconductor quantum dots
(A) A core obtained by adding Te to ZnSe nanoparticles, and a shell of ZnS nanoparticles,
(B) (Zn (1-2 x ) In x Ag x S) is used as a core or shell;
(C) Core ZnS nanoparticles containing Mn ions,
(D) using ZnS nanoparticles as a core,
(E) using Zn—In—Ag—S based semiconductor nanoparticles as a core;
(F) silicon nanoparticles as the core or shell,
It is also preferable that it is any one of these. By using these semiconductor quantum dots, strong light emission and wavelength transition due to thermal expansion of the semiconductor quantum dots can be suitably obtained.
(g)シリコンナノ粒子をコアとし、エルビウムをシェルとする、
(h)エルビウムをコアとし、シリコンナノ粒子をシェルとする、
のいずれか1つであることも好ましい。エルビウムは熱膨張率が高いので、半導体量子ドットを熱膨張させた際に大きく膨張することで波長の遷移が大きくなる。そのため、より情報を鮮明に読み取ることができ、セキュリティを高めることができる。 Core / shell type semiconductor quantum dots
(G) Using silicon nanoparticles as a core and erbium as a shell,
(H) Erbium as a core and silicon nanoparticles as a shell,
It is also preferable that it is any one of these. Since erbium has a high coefficient of thermal expansion, the wavelength transition increases when the semiconductor quantum dot expands greatly when thermally expanded. Therefore, information can be read more clearly and security can be improved.
10A、10B 情報記録カード
11 情報記録媒体
11A、11B 情報パターン担体
12 情報パターン
13 マスク
14 下地印刷層
15 発光ダイオード
16、16A 光センサ
17 情報判定部
2 光学読み取り機構
3 冷却手段
H1 励起光
H2 励起により発光する光線 DESCRIPTION OF
図1は、本実施形態の情報パターン担体及び光学読み取り方法を実施するための読み取り装置の概略図である。読み取り装置1は、情報記録カード10Aの情報を読み取るためのもので、発光ダイオード15と、光学読み取り機構2とを備えて概略構成される。 [First Embodiment]
FIG. 1 is a schematic diagram of a reading apparatus for carrying out the information pattern carrier and the optical reading method of the present embodiment. The
図4は、第2の実施形態の光学読み取り方法を実施するための読み取り装置の概略図である。本実施形態の情報記録カード10Bは、情報パターン担体11Bを備え、情報パターン担体11Bは情報記録媒体(又は管理対象物)11と、情報記録媒体11に印刷されているが情報パターンを形成しない下地印刷層14と、情報記録媒体11に印刷されたバーコード又はQRコード等の情報パターン12とを備えている。なお、第1の実施形態と重複する部分については同符号を付して説明を省略する。 [Second Embodiment]
FIG. 4 is a schematic view of a reading apparatus for carrying out the optical reading method of the second embodiment. The
図5は、第3の実施形態の光学読み取り方法を実施するための読み取り装置の概略図である。本実施形態の読み取り装置1Aでは、半導体量子ドットを冷却することにより半導体量子ドットを熱収縮させる冷却手段3が設けられている。なお、第1の実施形態と重複する部分については同符号を付して説明を省略する。 [Third Embodiment]
FIG. 5 is a schematic view of a reading apparatus for carrying out the optical reading method of the third embodiment. In the
(b)コア/シェル型の半導体量子ドットが、Mnイオンを含んだZnSナノ粒子をコアとする、コア/シェル型の半導体量子ドット、
(c)Zn2+、In3+及びAg+を含むチオール錯体を熱分解することにより、In3+及びAg+がドープされたZnSナノ粒子(Zn(1-2x)InxAgxS)であるコア/シェル型の半導体量子ドット、
(d)コアがMnイオンを含んだZnSナノ粒子であるコア/シェル型の半導体量子ドット、
(e)Zn-In-Ag-S系半導体ナノ粒子をコアとするコア/シェル型の半導体量子ドット、又は
(f)シリコンナノ粒子をコア又はシェルとするコア/シェル型の半導体量子ドット。 (A) a core / shell type semiconductor quantum dot having a core obtained by adding Te to ZnSe nanoparticles and a shell containing ZnS nanoparticles;
(B) a core / shell type semiconductor quantum dot in which the core / shell type semiconductor quantum dot has ZnS nanoparticles containing Mn ions as a core;
(C) ZnS nanoparticles doped with In 3+ and Ag + (Zn (1-2 x ) In x Ag x S) by thermally decomposing a thiol complex containing Zn 2+ , In 3+ and Ag + Core / shell type semiconductor quantum dots,
(D) a core / shell type semiconductor quantum dot whose core is a ZnS nanoparticle containing Mn ions;
(E) A core / shell semiconductor quantum dot having Zn—In—Ag—S based semiconductor nanoparticles as a core, or (f) a core / shell semiconductor quantum dot having silicon nanoparticles as a core or shell.
(g)シリコンナノ粒子をコアとし、エルビウムをシェルとするコア/シェル型の半導体量子ドット、又は、
(h)エルビウムをコアとし、シリコンナノ粒子をシェルとするコア/シェル型の半導体量子ドット
であってもよい。エルビウムの熱膨張率は、20℃において、7.6×10-6/℃であり、これは、20℃において、2.5×10-6/℃であるシリコンの熱膨張率の約3倍に当たるため、エルビウムを採用することは、膨張による波長のシフトを実現する上で最も好ましい。 In addition, the core / shell type semiconductor quantum dots contained in the visible ink are:
(G) a core / shell type semiconductor quantum dot having silicon nanoparticles as a core and erbium as a shell, or
(H) A core / shell type semiconductor quantum dot having erbium as a core and silicon nanoparticles as a shell may be used. The thermal expansion coefficient of erbium is 7.6 × 10 −6 / ° C. at 20 ° C., which is about three times the thermal expansion coefficient of silicon, which is 2.5 × 10 −6 / ° C. at 20 ° C. Therefore, it is most preferable to use erbium in order to realize wavelength shift due to expansion.
Claims (12)
- コア/シェル型の半導体量子ドットを含有する着色インクで形成された情報パターンと、該情報パターン上に被着形成されており該情報パターンを非可視化するマスクとを備えた情報パターン担体であって、該情報パターンは、前記半導体量子ドットのバンドギャップよりもエネルギが高い励起光線を照射された際に、前記半導体量子ドットが、熱膨張して長波長側に遷移した波長を有する光を発光するように構成されていることを特徴とする情報パターン担体。 An information pattern carrier comprising an information pattern formed of a colored ink containing a core / shell type semiconductor quantum dot, and a mask formed on the information pattern so as to be invisible. The information pattern emits light having a wavelength at which the semiconductor quantum dot thermally expands and shifts to a longer wavelength side when irradiated with an excitation light having energy higher than the band gap of the semiconductor quantum dot. An information pattern carrier configured as described above.
- コア/シェル型の半導体量子ドットを含有する着色インクで形成されており、情報記録媒体又は管理対象物の地色又は下地着色層の色と同一色化することによって非可視化された情報パターンを備えた情報パターン担体であって、該情報パターンは、前記半導体量子ドットのバンドギャップよりもエネルギが高い励起光線を照射された際に、前記半導体量子ドットが、熱膨張して長波長側に遷移した波長を有する光を発光するように構成されていることを特徴とする情報パターン担体。 It is formed with colored ink containing core / shell type semiconductor quantum dots, and has an information pattern that is made invisible by making it the same color as the ground color of the information recording medium or management object or the color of the underlying colored layer When the information pattern is irradiated with an excitation light having an energy higher than the band gap of the semiconductor quantum dot, the semiconductor quantum dot thermally expands and shifts to a longer wavelength side. An information pattern carrier configured to emit light having a wavelength.
- 前記着色インクは、染料、ロイコ色素、又は粒子径がサブミクロンの顔料のいずれか1つの着色材で着色されていることを特徴とする請求の範囲1又は2に記載の情報パターン担体。 3. The information pattern carrier according to claim 1, wherein the colored ink is colored with any one of a dye, a leuco pigment, or a pigment having a particle diameter of submicron.
- 前記コア/シェル型の半導体量子ドットが、CdSe/ZnSをコアとしていることを特徴とする請求の範囲1から3のいずれか1項に記載の記載の情報パターン担体。 The information pattern carrier according to any one of claims 1 to 3, wherein the core / shell type semiconductor quantum dots have CdSe / ZnS as a core.
- 前記コア/シェル型の半導体量子ドットが、
(a)ZnSeナノ粒子にTeを加えたものをコアとし、ZnSナノ粒子をシェルとする、
(b)(Zn(1-2x)InxAgxS)をコア又はシェルとする、
(c)Mnイオンを含んだZnSナノ粒子をコアとする、
(d)ZnSナノ粒子をコアとする、
(e)Zn-In-Ag-S系半導体ナノ粒子をコアとする、
(f)シリコンナノ粒子をコア又はシェルとする、
の上記(a)~(f)のうちいずれか1つであることを特徴とする請求の範囲1から4のいずれか1項に記載の情報パターン担体。 The core / shell type semiconductor quantum dots are:
(A) A core obtained by adding Te to ZnSe nanoparticles, and a shell of ZnS nanoparticles,
(B) (Zn (1-2 x ) In x Ag x S) is used as a core or shell,
(C) Core ZnS nanoparticles containing Mn ions,
(D) using ZnS nanoparticles as a core,
(E) using Zn—In—Ag—S based semiconductor nanoparticles as a core;
(F) silicon nanoparticles as the core or shell,
5. The information pattern carrier according to claim 1, wherein the information pattern carrier is any one of the above (a) to (f). - 前記コア/シェル型の半導体量子ドットが、
(g)シリコンナノ粒子をコアとし、エルビウムをシェルとする、
(h)エルビウムをコアとし、シリコンナノ粒子をシェルとする、
の上記(g)、(h)のうちいずれか1つであることを特徴とする請求の範囲1から4のいずれか1項に記載の情報パターン担体。 The core / shell type semiconductor quantum dots are:
(G) Using silicon nanoparticles as a core and erbium as a shell,
(H) Erbium as a core and silicon nanoparticles as a shell,
The information pattern carrier according to any one of claims 1 to 4, wherein the information pattern carrier is any one of (g) and (h). - 情報記録媒体又は管理対象物上にコア/シェル型の半導体量子ドットを含有する着色インクで形成され、その上にマスクが形成されることによって非可視化された情報パターンの光学読み取り方法であって、前記情報パターンに前記半導体量子ドットのバンドギャップよりもエネルギが高い励起光線を照射して前記半導体量子ドットを熱膨張させ、該熱膨張した半導体量子ドットから、長波長側に遷移した波長に遷移した波長を有する光を発光させ、該遷移した長波長側部分に感度を有する光センサによって前記発光光を受光し、前記情報パターンを読み取ることを特徴とする光学読み取り方法。 An optical reading method of an information pattern formed by coloring ink containing core / shell type semiconductor quantum dots on an information recording medium or an object to be managed and made invisible by forming a mask on the ink, The information pattern is irradiated with an excitation beam having energy higher than the band gap of the semiconductor quantum dot to thermally expand the semiconductor quantum dot, and the transition from the thermally expanded semiconductor quantum dot to the wavelength shifted to the longer wavelength side is performed. An optical reading method, wherein light having a wavelength is emitted, the emitted light is received by an optical sensor having sensitivity to the transitioned long wavelength side portion, and the information pattern is read.
- 情報記録媒体又は管理対象物上にコア/シェル型の半導体量子ドットを含有する着色インクで形成され、その地色又は下地着色層の色と同一色化することによって非可視化された情報パターンの光学読み取り方法であって、前記情報パターンに前記半導体量子ドットのバンドギャップよりもエネルギが高い励起光線を照射して前記半導体量子ドットを熱膨張させ、該熱膨張した半導体量子ドットから、長波長側に遷移した波長を有する光を発光させ、該遷移した長波長側部分に感度を有する光センサによって前記発光光を受光し、前記情報パターンを読み取ることを特徴とする光学読み取り方法。 Optical of an information pattern formed by a colored ink containing core / shell type semiconductor quantum dots on an information recording medium or management object and made invisible by making it the same color as the background color or the color of the underlying colored layer In the reading method, the information pattern is irradiated with an excitation beam having energy higher than a band gap of the semiconductor quantum dot to thermally expand the semiconductor quantum dot, and from the thermally expanded semiconductor quantum dot to a longer wavelength side An optical reading method comprising: emitting light having a transitioned wavelength; receiving the emitted light by an optical sensor having sensitivity to the transitioned long wavelength side portion; and reading the information pattern.
- 前記着色インクは、染料、ロイコ色素、又は粒子径がサブミクロンの顔料のいずれか1つの着色材で着色されていることを特徴とする請求の範囲7又は8に記載の光学読み取り方法。 9. The optical reading method according to claim 7, wherein the colored ink is colored with any one of a dye, a leuco dye, or a pigment having a particle diameter of submicron.
- 前記コア/シェル型の半導体量子ドットが、CdSe/ZnSをコアとしていることを特徴とする請求の範囲7から9のいずれか1項に記載の光学読み取り方法。 10. The optical reading method according to any one of claims 7 to 9, wherein the core / shell type semiconductor quantum dots have CdSe / ZnS as a core.
- 前記コア/シェル型の半導体量子ドットが、
(a)ZnSeナノ粒子にTeを加えたものをコアとし、ZnSナノ粒子をシェルとする、
(b)(Zn(1-2x)InxAgxS)をコア又はシェルとする、
(c)Mnイオンを含んだZnSナノ粒子をコアとする、
(d)ZnSナノ粒子をコアとする、
(e)Zn-In-Ag-S系半導体ナノ粒子をコアとする、
(f)シリコンナノ粒子をコア又はシェルとする、
の上記(a)~(f)のうちいずれか1つであることを特徴とする請求の範囲7から10のいずれか1項に記載の光学読み取り方法。 The core / shell type semiconductor quantum dots are:
(A) A core obtained by adding Te to ZnSe nanoparticles, and a shell of ZnS nanoparticles,
(B) (Zn (1-2 x ) In x Ag x S) is used as a core or shell;
(C) Core ZnS nanoparticles containing Mn ions,
(D) using ZnS nanoparticles as a core,
(E) using Zn—In—Ag—S based semiconductor nanoparticles as a core;
(F) silicon nanoparticles as the core or shell,
The optical reading method according to any one of claims 7 to 10, wherein any one of (a) to (f) above is provided. - 前記コア/シェル型の半導体量子ドットが、
(g)シリコンナノ粒子をコアとし、エルビウムをシェルとする、
(h)エルビウムをコアとし、シリコンナノ粒子をシェルとする、
の上記(g)、(h)のうちいずれか1つであることを特徴とする請求の範囲7から10のいずれか1項に記載の光学読み取り方法。 The core / shell type semiconductor quantum dots are:
(G) Using silicon nanoparticles as a core and erbium as a shell,
(H) Erbium as a core and silicon nanoparticles as a shell,
The optical reading method according to any one of claims 7 to 10, wherein any one of (g) and (h) is provided.
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2014185224A (en) * | 2013-03-22 | 2014-10-02 | Nagoya Univ | Semiconductor nanoparticle and fluorescent probe for labeling biological samples |
CN110456071A (en) * | 2019-08-01 | 2019-11-15 | 济南大学 | A kind of preparation method of the electrochemical luminescence sensor of quantum dot functional metal organic framework detection N- akrencephalon pro-BNP |
CN112969594A (en) * | 2018-10-31 | 2021-06-15 | 韩国机械研究院 | Structural colored substrate, method for manufacturing structural colored substrate, and security verification system using structural colored substrate manufactured thereby |
WO2021161860A1 (en) * | 2020-02-10 | 2021-08-19 | 三菱ケミカル株式会社 | Composition containing semiconductor nanoparticles, color filter, and image display device |
JP7387889B2 (en) | 2019-10-17 | 2023-11-28 | フラウンホーファー-ゲゼルシャフト ツア フォルデルング デア アンゲヴァンテン フォルシュング エー ファウ | Optical security identifier suitable for track and trace and/or serialization systems |
Families Citing this family (4)
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---|---|---|---|---|
CN105882184B (en) * | 2014-11-05 | 2019-02-22 | 北京印刷学院 | A kind of method for anti-counterfeit using function ink and printing element synergistic effect |
US9734444B2 (en) * | 2015-06-05 | 2017-08-15 | Empire Technology Development Llc | Solid-state barcodes and methods for their preparation and use |
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Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11209675A (en) * | 1998-01-28 | 1999-08-03 | Toshiba Tec Corp | Fluorescent ink and recorded information reading apparatus |
WO2008010822A2 (en) * | 2005-09-12 | 2008-01-24 | Ultradots, Inc. | Authenticating and identifying objects using nanoparticles |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1265216C (en) * | 2000-04-15 | 2006-07-19 | Ovd基尼格拉姆股份公司 | Pattern |
CN2546918Y (en) * | 2002-06-10 | 2003-04-23 | 中山国安火炬科技发展有限公司 | Gravure latent image local holographic comprehensive antifake label |
-
2010
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11209675A (en) * | 1998-01-28 | 1999-08-03 | Toshiba Tec Corp | Fluorescent ink and recorded information reading apparatus |
WO2008010822A2 (en) * | 2005-09-12 | 2008-01-24 | Ultradots, Inc. | Authenticating and identifying objects using nanoparticles |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014185224A (en) * | 2013-03-22 | 2014-10-02 | Nagoya Univ | Semiconductor nanoparticle and fluorescent probe for labeling biological samples |
CN112969594A (en) * | 2018-10-31 | 2021-06-15 | 韩国机械研究院 | Structural colored substrate, method for manufacturing structural colored substrate, and security verification system using structural colored substrate manufactured thereby |
EP3854602A4 (en) * | 2018-10-31 | 2022-07-06 | Korea Institute of Machinery & Materials | Structural coloration substrate, method for manufacturing structural coloration substrate, and security verification system using structural coloration substrate manufactured thereby |
CN110456071A (en) * | 2019-08-01 | 2019-11-15 | 济南大学 | A kind of preparation method of the electrochemical luminescence sensor of quantum dot functional metal organic framework detection N- akrencephalon pro-BNP |
CN110456071B (en) * | 2019-08-01 | 2023-01-13 | 济南大学 | Preparation method of electrochemical luminescence sensor for detecting N-terminal brain natriuretic peptide precursor by quantum dot functionalized metal organic framework structure |
JP7387889B2 (en) | 2019-10-17 | 2023-11-28 | フラウンホーファー-ゲゼルシャフト ツア フォルデルング デア アンゲヴァンテン フォルシュング エー ファウ | Optical security identifier suitable for track and trace and/or serialization systems |
WO2021161860A1 (en) * | 2020-02-10 | 2021-08-19 | 三菱ケミカル株式会社 | Composition containing semiconductor nanoparticles, color filter, and image display device |
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CN102282568A (en) | 2011-12-14 |
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