WO2010076422A1 - Method for assembling two substrates in a vacuum at a negative temperature, and machine for implementing said method - Google Patents
Method for assembling two substrates in a vacuum at a negative temperature, and machine for implementing said method Download PDFInfo
- Publication number
- WO2010076422A1 WO2010076422A1 PCT/FR2009/001438 FR2009001438W WO2010076422A1 WO 2010076422 A1 WO2010076422 A1 WO 2010076422A1 FR 2009001438 W FR2009001438 W FR 2009001438W WO 2010076422 A1 WO2010076422 A1 WO 2010076422A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- thin
- substrates
- vacuum
- pressure
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 67
- 238000000034 method Methods 0.000 title claims abstract description 35
- 239000000463 material Substances 0.000 claims abstract description 60
- 238000000151 deposition Methods 0.000 claims abstract description 23
- 238000003825 pressing Methods 0.000 claims abstract description 23
- 230000000295 complement effect Effects 0.000 claims abstract description 6
- 229910052738 indium Inorganic materials 0.000 claims description 16
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 16
- 230000008021 deposition Effects 0.000 claims description 11
- 239000003575 carbonaceous material Substances 0.000 claims description 6
- 229910052787 antimony Inorganic materials 0.000 claims description 5
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 5
- 229910052797 bismuth Inorganic materials 0.000 claims description 5
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 5
- 229910052793 cadmium Inorganic materials 0.000 claims description 5
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052716 thallium Inorganic materials 0.000 claims description 5
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 claims description 5
- 239000011368 organic material Substances 0.000 claims description 3
- 239000004744 fabric Substances 0.000 claims description 2
- 239000010409 thin film Substances 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 37
- 238000003466 welding Methods 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000010070 molecular adhesion Effects 0.000 description 1
- 238000000329 molecular dynamics simulation Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 238000012958 reprocessing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- PTISTKLWEJDJID-UHFFFAOYSA-N sulfanylidenemolybdenum Chemical compound [Mo]=S PTISTKLWEJDJID-UHFFFAOYSA-N 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
- C09J5/02—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers involving pretreatment of the surfaces to be joined
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16B—DEVICES FOR FASTENING OR SECURING CONSTRUCTIONAL ELEMENTS OR MACHINE PARTS TOGETHER, e.g. NAILS, BOLTS, CIRCLIPS, CLAMPS, CLIPS OR WEDGES; JOINTS OR JOINTING
- F16B11/00—Connecting constructional elements or machine parts by sticking or pressing them together, e.g. cold pressure welding
- F16B11/004—Connecting constructional elements or machine parts by sticking or pressing them together, e.g. cold pressure welding by cold pressure welding
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2400/00—Presence of inorganic and organic materials
- C09J2400/20—Presence of organic materials
- C09J2400/22—Presence of unspecified polymer
- C09J2400/226—Presence of unspecified polymer in the substrate
Definitions
- the present invention relates to a method for assembling two substrates under vacuum and a machine 5 for implementing such a method.
- the invention relates to a method of assembling a first substrate with a second substrate, comprising the following steps carried out under vacuum and at a negative temperature:
- the connecting material is chosen from: bismuth, antimony, lead, thallium, cadmium or indium.
- the joining material is indium.
- the thickness of the two thin layers is identical.
- the thickness of each of the thin layers is at least 200 nm +/- 5%.
- the thickness of each of the thin layers is equal to 800 nm +/- 5%.
- the material of the thin layers has a purity of at least 99.95%.
- the materials of each of the substrates are chosen from: organic, rigid carbonaceous material, flexible carbonaceous material, or thermoformed organic material.
- the process is carried out at a temperature below -150 ° C.
- the pressing pressure is at least 45 pascal +/- 3%.
- the vacuum pressure is less than 10 ⁇ 6 mbar.
- the invention also relates to a machine for assembling a first substrate with a second substrate comprising:
- said deposition modules are able to deposit thin layers of identical thicknesses.
- the machine further comprises a cryogenic plant for reaching and maintaining in the chamber a temperature below -150 ° C. ⁇ - -
- the pressing means is capable of applying a pressure at least equal to 45 pascal +/- 3%.
- the machine also comprises at least one vacuum pump capable of producing in the chamber a vacuum pressure of less than 10 ⁇ 6 mbar.
- the machine comprises at least one pair of pressure rollers capable of pressing two substrates of flexible sheet material.
- the machine comprises a first pair of guide rollers, at least one pair of pressure rollers and a cryogenic module able to regulate the temperature of the guide rolls at -150 ° C +/- 0 C and the temperature of the pressure rollers at -150 ° C +/- 2 ° C.
- FIGS. 1-3 illustrate the different steps of the assembly method according to the invention
- FIG. 1 shows a diagrammatically a first substrate 1 and a second substrate 2. These two substrates are intended to be assembled by welding / bonding the first substrate 1 by its surface 3 with the second substrate 2 by its surface 4.
- a condition of the process is that these two surfaces 3, 4 are complementary. This means that the surfaces 3, 4 are shaped to fit perfectly one on the other. In the case of rigid substrates 1 2, the surfaces 3, 4 have shapes which adapt perfectly. This condition is still achieved when at least one of the substrates 1, 2 is flexible or deformable and that its surface is deformed to fit the surface of the other substrate when the two substrates 1, 2 are pressed against one another.
- 1- 'otherT shows a diagrammatically a first substrate 1 and a second substrate 2. These two substrates are intended to be assembled by welding / bonding the first substrate 1 by its surface 3 with the second substrate 2 by its surface 4.
- a condition of the process is that these two surfaces 3, 4 are complementary. This means that the surfaces 3, 4 are shaped to fit perfectly one on the other. In the case of rigid substrates
- the two substrates 1 and 2 are separated as illustrated in FIG. 1.
- one or more prior steps known to those skilled in the art, may be advantageous or necessary. in order to prepare the substrate 1, 2 to better receive said deposit.
- sputter deposition is advantageously preceded by ionic etching.
- the substrate 1, 2, considered at the start of the process according to the invention may be blank or have already undergone one or more preliminary thin layer deposits.
- each of the respective surfaces 3, 4 of the substrates 1, 2, to be assembled receives a thin layer deposition of an assembly material.
- a first means 7 deposits on the first surface 3 a deposit 5.
- a second means 8 deposits on the second surface 4 a deposit 6.
- the first depositing means 7 may be merged with the second depositing means 8.
- the first surface 3 of the first substrate 1 and the second surface 4 of the second substrate 2 are brought into contact in order to make the complementary shapes coincide and to present the joining material 5, 6.
- a pressing force 9, 10, of the two substrates 1, 2, against each other is then applied. This pressing carries out the assembly between them of the two layers, which thus fix the two substrates.
- the assembly can then be put back into a vacuum and temperature condition. It retains its welding / adhesion properties and produces a particularly strong assembly.
- an assembly using indium as an assembly material has a peel strength of 20 to 22 N / mm 2 .
- the basic principle of the assembly is the realization of two pure layers 5, 6, respectively filed Fitting material on each substrate ⁇ ⁇ 2 ⁇ Tra- '* setting into pressure contact of two pure layers 5, 6, and having complementary shapes allows interpenetration at the atomic level of the two layers. This results in a molecular diffusion bonding of the two layers.
- a necessary condition for the mutual molecular diffusion of the layers 5, 6 is that both are made with the same joining material.
- the deposition, the contacting and the pressing are carried out under vacuum, and the layers 5, 6, of assembly material are not altered, for example by oxidation, between the deposit and pressing. Once assembled, the layers of assembly material are isolated from the environment and this isolation gives the assembly a very good durability.
- the assembly material thus deposited in a thin layer is a metal advantageously chosen from: bismuth, antimony, lead, thallium, cadmium or indium. All the materials that are candidates for assembly material have not been identified so far. Likewise, the characteristic or characteristics of the material that makes it suitable for performing the welding / bonding are not precisely determined. It is certain that the six materials mentioned previously work. Given their relative dispersion in Mendeleev's table, other materials might be candidates.
- the eligibility criteria for an assembly material are, inter alia: its ease of implementation for supplying a deposition module, its electrical conductivity, its capacity to be deposited in a thin layer, its physicochemical stability at low application temperatures. process, its cost, its dangerousness, ...
- bismuth, antimony, lead, thallium, and cadmium are polluting components and dangerous for the environment and for the man, which makes delicate the Handling, maintenance and reprocessing operations at end of life. Also it is best to avoid them.
- bismuth, antimony, thallium, cadmium are very expensive materials. The cheaper lead a priori, becomes also as soon as we consider the purity necessary for the implementation-of-the-process.
- Indium does not have these two disadvantages and is as a candidate "particularly advantageous. Indium has good conductivity and good adhesion 1.
- Indium is simple and easy to deposit and allows uniform deposits. Indium has a physicochemical compatibility with metals such as Cu, Cu / Ni, Cu / Ag, Aisi
- Indium has a mechanical compatibility with the materials (previously deposited substrate or layer materials) without modifying the electrical performance of previously deposited layers. Indium is perfectly isotropic, ie its spatial physical properties do not change, whatever the molecular dynamic direction.
- the thicknesses of each of the two thin layers 5, 6 respectively deposited on each of the surfaces 3, 4 should be identical.
- each of the thin layers is at least equal to 200 nm +/- 5%.
- a purity of at least 99.95% of the constituent material of the thin layers is a good quality condition of the welding / bonding obtained.
- each of the substrates 1 ⁇ ⁇ , ⁇ 2y can be selected from numerous materials. Thus it is possible to apply the assembly process to materials such as glass, metals or crystals. It should be possible to deposit a thin layer of connecting material. However, it is also possible to deposit intermediate bonding layers, if necessary, if the connecting material proves incompatible with the substrate 1, 2.
- the substrate 1, 2 consists of a material chosen from: organic fabric, carbonaceous material rigid, flexible carbonaceous material, or thermoformed organic material.
- a particularly interesting application uses flexible materials in sheet or thin film.
- the assembly material In order to make possible the molecular diffusion which allows the assembly, it is appropriate that during the contacting and pressing of the two deposited thin films 5, 6, the assembly material reaches creep performance placing it under favorable conditions. to molecular adhesion, allowing fusion at the molecular level of the two deposited layers 5, 6.
- An optimum temperature achieving these conditions, especially in the case of indium and under the conditions of vacuum pressure and pressing pressure considered, is equal to -150 0 C +/- 2 ° C.
- the molecular inter-diffusion of the two layers 5, 6 is favored by a pressing pressure of the two substrates 1, 2, at least equal to 45 pascal +/- 3%.
- a minimum vacuum pressure makes it possible to avoid the risk of surface oxidation of the deposited layers 5, 6, which is always possible with the high purities of assembly material used.
- the vacuum pressure is advantageously less than -10 -6 mbar, or even -10- ⁇ -mbar-
- a machine 11 comprises a vacuum chamber 12.
- the machine 11 comprises a first module 7 capable of depositing a thin layer 5 of assembly material, on a first surface 3 of a first substrate 1 and a second module 8, which can be confused with the first module 7, able to deposit a thin film 6 of the same material on a second surface 4 of a second substrate 2.
- the deposit can be made by any device capable of deposit a thin layer of material under vacuum. Thus it is possible to deposit by electrolytic deposition, vacuum evaporation, sputtering or any other device / process known to those skilled in the art. In the context of the process according to the invention, in view of the assembly materials envisaged, the deposition is preferably carried out by sputtering.
- the machine further comprises means for contacting said first surface 3 and said second surface 4, and means for pressing said first surface 3 against said second surface 4 by applying a pressure force.
- the machine is advantageously capable of depositing thin layers of identical thickness. Similarly, it is advantageous to deposit the two layers of material, assembly on the two substrates at the same time, in order to obtain two diffusion surfaces in the same physicochemical state.
- the machine 11 In order to place the layers 5, 6 of assembly material at the temperature permitting the molecular diffusion and therefore the welding, the machine 11 also comprises at least one cryogenic unit making it possible to reach and maintain in the chamber 12 a temperature lower adapted.
- this temperature In the case in particular of indium, this temperature is at least equal to -150 ° C.
- the cryogenic plant is " advantageously “ capable of achieving this temperature in the enclosure 12, or at least at the level of the substrates 1, 2, and under vacuum conditions, and then regulate it with an accuracy of the order of +/- 20 ° C. In the case of indium, this temperature is -150 ° C. ⁇ 20 ° C.
- the machine is still such that the pressing means is able to apply a configurable pressure and advantageously controlled with an accuracy of the order of +/- 3%. Under the conditions of implementation of the process, this pressure is at least 45 pascal +/- 3%.
- the machine also has at least one vacuum pump capable of producing in the chamber a vacuum pressure of less than 10 ⁇ 6 mbar.
- a particularly interesting embodiment relates to substrates 1, 2, of small thickness, a few tenths of mm, flexible, sheets or continuous films.
- FIG. 4 An embodiment of the machine 11 is shown schematically in FIG. 4.
- the machine 11 comprises, in an enclosure 12, at least one pair of pressure rollers 13 able to press two substrates 1, .2, flexible sheet material.
- the substrates 1, 2 come from the bottom, where they have undergone a deposition 5, 6, of assembly material within a deposition module (not shown) placed in said enclosure 12.
- the substrates 1 , 2 pass over a first pair of guide rollers 14, then between two pressure rollers 13.
- a cryogenic module is able to regulate the temperature of the guide rollers 14 to -150 0 C +/- 10 0 C and the temperature of the rollers 13 to -150 0 C +/- 2 ° C, in order to communicate these temperatures to the substrates 1, 2, during their passage over or between said rollers 13, 14.
- the substrates 1, 2 assembled by pressing form a single assembly 15 who leaves the machine 11 from below.
- the chamber 12 consists entirely of a double wall forming a cavity with a thickness of 50 mm.
- the . Specific cryogenic equipment built into this chamber include:
- a first "Polycold" system making it possible to obtain negative temperatures of less than: -15 ° C. to +/- 10 ° C., the threshold for adjusting the temperature is: -110 ° C.,
- a first brazed pipe network on the internal faces of the enclosure 12 a second network of pipes brazed on thermal radiators.
- the two networks are connected between the first polycold and the thermal radiators.
- the heat radiators are placed near the substrates 1, 2, when the latter enter the chamber 12 for pressing, thus creating a first volume of low temperature.
- the vacuum is a bad heat exchanger, the knowledge of the actual temperature is imperative and requires to set up measurement means to know the different temperatures depending on the location.
- thermocouple positioned in a vacuum
- cryogenic thermocouples are positioned: two cryogenic thermocouples placed inside each of the two pressing rollers 13,
- the rollers 13, 14 are made of stainless steel AISI 420.
- the contact surfaces with the substrates 1, 2 are advantageously coated with a non-stick deposit such as molybdenum sulphide pulverized in the mass and polished.
- the guide rollers 14 are responsible for directing the substrates 1, 2 towards the pressure rollers 14 by lowering the temperature of the substrates " 1, 2.
- the pressure rollers 13 are automatically adjusted in pressure according to the physicochemical nature of the substrates 1, 2, and deposits 5, 6.
- the assembly machine requires a precise calibration and calibration phase, in particular as regards the cryogenic parameters, all the parameters thus determined being integrated into a machine control automaton in order to guarantee the reproducibility of the process. realized.
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention relates to a method for assembling a first substrate (1) to a second substrate (2), characterised in that it comprises the following steps in a vacuum and at a negative temperature: depositing a thin film (5) of an assembling material onto a first surface (3) of the first substrate (1); depositing a thin film (6) of the same material onto a second surface (4) of the second substrate (2) having a shape complementary to that of the first surface (3); contacting said first surface (3) with said second surface (4); pressing said first surface (3) against said second surface (4). The invention also relates to a machine for implementing said method.
Description
PROCEDE PERMETTANT D ' ASSEMBLER DEUX SUBSTRATS SOUS VIDE A TEMPERATURE NEGATIVE ET MACHINE PERMETTANT LA MISE EN OEUVRE DE CE PROCEDEMETHOD FOR ASSEMBLING TWO SUBSTRATES IN VACUUM AT NEGATIVE TEMPERATURE AND MACHINE FOR CARRYING OUT SAID METHOD
La présente invention concerne un procédé permettant d'assembler deux substrats sous vide et une machine 5 permettant la mise en œuvre d'un tel procédé.The present invention relates to a method for assembling two substrates under vacuum and a machine 5 for implementing such a method.
Dans le domaine de l'assemblage il n'existait pas de procédé pouvant être mis en œuvre sous vide.In the field of assembly there was no method that can be implemented under vacuum.
L'invention a pour objet un procédé d'assemblage d'un premier substrat avec un deuxième substrat, comprenant les0 étapes suivantes réalisées sous vide et à température négative :The invention relates to a method of assembling a first substrate with a second substrate, comprising the following steps carried out under vacuum and at a negative temperature:
- dépôt d'une couche mince de matériau d'assemblage, sur une première surface du premier substrat, dépôt d'une couche mince de même matériau sur une5 deuxième surface du deuxième substrat de forme complémentaire à ladite première surface,depositing a thin layer of assembly material, on a first surface of the first substrate, depositing a thin layer of the same material on a second surface of the second substrate of complementary shape to said first surface;
- mise en contact de ladite première surface et de ladite deuxième surface, pressage de ladite première surface contre ladite0 deuxième surface.contacting said first surface and said second surface, pressing said first surface against said second surface.
Selon une autre caractéristique de l'invention, le matériau d'assemblage est choisi parmi : bismuth, antimoine, plomb, thallium, cadmium ou'_ indium.According to another characteristic of the invention, the connecting material is chosen from: bismuth, antimony, lead, thallium, cadmium or indium.
Selon une caractéristique préférentielle de l'invention,5 le matériau d'assemblage est de l' indium.According to a preferred feature of the invention, the joining material is indium.
Selon une autre caractéristique de l'invention, l'épaisseur des deux couches minces est identique.According to another characteristic of the invention, the thickness of the two thin layers is identical.
Selon- une autre caractéristique de l-'-invention, l'épaisseur de chacune des couches minces est au moins égale0 à 200 nm +/-5%. v According to another feature of the invention, the thickness of each of the thin layers is at least 200 nm +/- 5%. v
Selon une autre caractéristique de l'invention, • l'épaisseur de chacune des couches minces est égale à 800 nm +/-5%.According to another characteristic of the invention, the thickness of each of the thin layers is equal to 800 nm +/- 5%.
Selon une autre caractéristique de l'invention, le5 matériau des couches minces présente une pureté d'au moins 99,95%.According to another characteristic of the invention, the material of the thin layers has a purity of at least 99.95%.
Selon une autre caractéristique de l'invention, les matériaux de chacun des substrats sont choisis parmi : tissu
organique, matériau carboné rigide, matériau carboné souple, ou matériau organique thermoformé.According to another characteristic of the invention, the materials of each of the substrates are chosen from: organic, rigid carbonaceous material, flexible carbonaceous material, or thermoformed organic material.
Selon une autre caractéristique de l'invention, le procédé est réalisé à une température inférieure à -1500C. Selon une autre caractéristique de l'invention, la pression de pressage est au moins égale à 45 pascal +/-3%.According to another characteristic of the invention, the process is carried out at a temperature below -150 ° C. According to another characteristic of the invention, the pressing pressure is at least 45 pascal +/- 3%.
Selon une autre caractéristique de l'invention, la pression de vide est inférieure à 10~6 mbar.According to another characteristic of the invention, the vacuum pressure is less than 10 ~ 6 mbar.
L'invention concerne encore une machine d'assemblage d'un premier substrat avec un deuxième substrat comprenant :The invention also relates to a machine for assembling a first substrate with a second substrate comprising:
- une -enceinte sous v,ide, un module de dépôt d'une couche mince de matériau d'assemblage, sur une première surface du premier substrat,a sub-cavity, a module for depositing a thin layer of assembly material, on a first surface of the first substrate,
- un module de dépôt d'une couche mince de même, matériau sur une deuxième surface du deuxième substrat,a module for depositing a thin layer of the same material on a second surface of the second substrate,
- un moyen de mise en contact de ladite première surface et de ladite deuxième surface,means for bringing said first surface and said second surface into contact,
- un moyen de pressage de ladite première surface contre ladite deuxième surface - une centrale cryogénique permettant d'atteindre et de maintenir dans l'enceinte une température négative.- A means for pressing said first surface against said second surface - a cryogenic plant to reach and maintain in the chamber a negative temperature.
Selon une autre caractéristique de l'invention, lesdits modules de dépôt sont aptes à déposer des couches minces d'épaisseurs identiques. Selon une autre caractéristique de l'invention, la machine comprend encore une centrale cryogénique permettant d'atteindre et de maintenir dans l'enceinte une température inférieure à -1500C. ~ — —According to another characteristic of the invention, said deposition modules are able to deposit thin layers of identical thicknesses. According to another characteristic of the invention, the machine further comprises a cryogenic plant for reaching and maintaining in the chamber a temperature below -150 ° C. ~ - -
Selon une autre caractéristique de l'invention, le moyen de pressage est apte à appliquer une pression au moins égale à 45 pascal +/-3%.According to another characteristic of the invention, the pressing means is capable of applying a pressure at least equal to 45 pascal +/- 3%.
Selon une autre caractéristique de l'invention, la machine comprend encore au moins une pompe à vide capable de réaliser dans l'enceinte une pression de vide inférieure à 10~6 mbar.According to another characteristic of the invention, the machine also comprises at least one vacuum pump capable of producing in the chamber a vacuum pressure of less than 10 ~ 6 mbar.
Selon une autre caractéristique de l'invention, la machine comprend au moins une paire de rouleaux presseurs aptes à presser deux substrats de matériau souple en feuille.
Selon une autre caractéristique de l'invention, la machine comprend une première paire de rouleaux de guidage, au moins une paire de rouleaux presseurs et un module cryogénique apte à réguler la température des rouleaux de guidage à -1500C +/-100C et la température des rouleaux presseurs à -150°C +/-2°C.According to another characteristic of the invention, the machine comprises at least one pair of pressure rollers capable of pressing two substrates of flexible sheet material. According to another characteristic of the invention, the machine comprises a first pair of guide rollers, at least one pair of pressure rollers and a cryogenic module able to regulate the temperature of the guide rolls at -150 ° C +/- 0 C and the temperature of the pressure rollers at -150 ° C +/- 2 ° C.
D'autres caractéristiques, détails et avantages de l'invention ressortiront plus clairement de la description détaillée donnée ci-après à titre indicatif en relation avec des dessins sur lesquels :Other characteristics, details and advantages of the invention will emerge more clearly from the detailed description given below as an indication in relation to drawings in which:
- les figures 1-3 illustrent les différentes étapes du procédé d'assemblage selon l'invention,FIGS. 1-3 illustrate the different steps of the assembly method according to the invention,
- la figure 4 présente un schéma d'un mode de réalisation d'une machine d'assemblage. A la figure 1 sont schématisés un premier substrat 1 et un second substrat 2. Ces deux substrats sont destinés à être assemblés par soudage/collage du premier substrat 1 par sa surface 3 avec le second substrat 2 par sa surface 4. Une condition du procédé est que ces deux surfaces 3, 4 soient complémentaires. Ceci signifie que les surfaces 3, 4 sont conformées pour s'emboîter parfaitement l'une sur l'autre. Dans le cas de substrats 1,2 rigides les surfaces 3, 4 présentent des formes s 'adaptant parfaitement. Cette condition est encore réalisée lorsque l'un au moins des substrats 1, 2 est souple ou déformable et que sa surface se déforme pour venir épouser la surface de l'autre substrat lorsque les deux substrats 1, 2 sont pressés l'un contre —1-' autreT- Figure 4 shows a diagram of an embodiment of an assembly machine. In FIG. 1 are diagrammatically a first substrate 1 and a second substrate 2. These two substrates are intended to be assembled by welding / bonding the first substrate 1 by its surface 3 with the second substrate 2 by its surface 4. A condition of the process is that these two surfaces 3, 4 are complementary. This means that the surfaces 3, 4 are shaped to fit perfectly one on the other. In the case of rigid substrates 1 2, the surfaces 3, 4 have shapes which adapt perfectly. This condition is still achieved when at least one of the substrates 1, 2 is flexible or deformable and that its surface is deformed to fit the surface of the other substrate when the two substrates 1, 2 are pressed against one another. 1- 'otherT
Au départ du procédé les deux substrats 1 et 2 sont séparés comme illustrés à la figure 1. En fonction du procédé utilisé pour réaliser le dépôt, une ou plusieurs étapes préalables, connues de l'homme de l'art, peuvent être avantageuses ou nécessaires afin de préparer le substrat 1, 2 à mieux recevoir ledit dépôt. Ainsi un dépôt par pulvérisation cathodique est avantageusement précédé d'un décapage ionique.At the start of the process, the two substrates 1 and 2 are separated as illustrated in FIG. 1. Depending on the process used for depositing, one or more prior steps, known to those skilled in the art, may be advantageous or necessary. in order to prepare the substrate 1, 2 to better receive said deposit. Thus sputter deposition is advantageously preceded by ionic etching.
De même le substrat 1, 2, considéré au départ du procédé selon l'invention peut être vierge ou encore avoir déjà subi
un ou plusieurs dépôts de couches minces préalables.Similarly, the substrate 1, 2, considered at the start of the process according to the invention may be blank or have already undergone one or more preliminary thin layer deposits.
Selon une première étape illustrée à la figure 2, chacune des surfaces 3, 4, respectives des substrats 1, 2, à assembler, reçoit un dépôt en couche mince d'un matériau d'assemblage. Un premier moyen 7 dépose sur la première surface 3 un dépôt 5. Un deuxième moyen 8 dépose sur la deuxième surface 4 un dépôt 6. Selon un mode de réalisation le premier moyen de dépôt 7 peut être confondu avec le deuxième moyen de dépôt 8. ^ Comme illustré à la figure 3, la première surface 3 du premier substrat 1 et la deuxième surface 4 du deuxième substrat 2 sont mises en contact, afin de faire coïncider les formes complémentaires et de présenter l'un contre l'autre les dépôts de matériau d'assemblage 5, 6. Un effort de pressage 9, 10, des deux substrats 1, 2, l'un contre l'autre est ensuite appliqué. Ce pressage réalise l'assemblage entre elles des deux couches, qui fixent ainsi les deux substrats.According to a first step illustrated in FIG. 2, each of the respective surfaces 3, 4 of the substrates 1, 2, to be assembled, receives a thin layer deposition of an assembly material. A first means 7 deposits on the first surface 3 a deposit 5. A second means 8 deposits on the second surface 4 a deposit 6. According to one embodiment the first depositing means 7 may be merged with the second depositing means 8. As illustrated in FIG. 3, the first surface 3 of the first substrate 1 and the second surface 4 of the second substrate 2 are brought into contact in order to make the complementary shapes coincide and to present the joining material 5, 6. A pressing force 9, 10, of the two substrates 1, 2, against each other is then applied. This pressing carries out the assembly between them of the two layers, which thus fix the two substrates.
L'assemblage peut ensuite être remis en condition de vide et de température ,- ambiante. Il conserve ses propriétés de soudage/adhérence et produit un assemblage particulièrement résistant .The assembly can then be put back into a vacuum and temperature condition. It retains its welding / adhesion properties and produces a particularly strong assembly.
La performance mécanique d'un tel assemblage est extrêmement bonne. Ainsi un assemblage utilisant de 1 ' indium comme matériau d'assemblage présente une résistance à l'arrachement de 20 à 22N/mm2.The mechanical performance of such an assembly is extremely good. Thus, an assembly using indium as an assembly material has a peel strength of 20 to 22 N / mm 2 .
Le principe de base de l'assemblage est la réalisation de deux couches pures 5, 6, de matériau d'assemblage respectivement déposées sur chaque substrat ï~, 2 ~~Tra—'mise* en contact sous pression des deux couches pures 5, 6, et présentant des formes complémentaires permet une interpénétration au niveau atomique des deux couches. Il s'ensuit un soudage par diffusion moléculaire des deux couches. Une condition nécessaire à la diffusion moléculaire mutuelle des couches 5, 6, est qu'elles soient réalisées toutes deux avec le même matériau d'assemblage.The basic principle of the assembly is the realization of two pure layers 5, 6, respectively filed Fitting material on each substrate ï ~ 2 ~~ Tra- '* setting into pressure contact of two pure layers 5, 6, and having complementary shapes allows interpenetration at the atomic level of the two layers. This results in a molecular diffusion bonding of the two layers. A necessary condition for the mutual molecular diffusion of the layers 5, 6 is that both are made with the same joining material.
Le dépôt, la mise en contact et le pressage sont réalisés sous vide, ainsi les couches 5, 6, de matériau d'assemblage ne sont pas altérée, par exemple par oxydation, entre le
dépôt et le pressage. Une fois assemblées, les couches de matériau d'assemblage sont isolées de l'environnement et cet isolement confère à l'assemblage une très bonne longévité.The deposition, the contacting and the pressing are carried out under vacuum, and the layers 5, 6, of assembly material are not altered, for example by oxidation, between the deposit and pressing. Once assembled, the layers of assembly material are isolated from the environment and this isolation gives the assembly a very good durability.
Le matériau d'assemblage ainsi déposé en couche mince est un métal avantageusement choisi parmi : bismuth, antimoine, plomb, thallium, cadmium ou indium. Tous les matériaux candidats à être matériau d'assemblage n'ont à ce jour pas été identifiés. De même la ou les caractéristiques du matériau qui le rende apte à réaliser le soudage/collage ne sont pas déterminées avec précision. Il est certain que les six matériaux cités précédemment fonctionnent. Compte tenu de leur relative dispersion dans la table de Mendeleiev, d'autres matériaux pourraient être candidats.The assembly material thus deposited in a thin layer is a metal advantageously chosen from: bismuth, antimony, lead, thallium, cadmium or indium. All the materials that are candidates for assembly material have not been identified so far. Likewise, the characteristic or characteristics of the material that makes it suitable for performing the welding / bonding are not precisely determined. It is certain that the six materials mentioned previously work. Given their relative dispersion in Mendeleev's table, other materials might be candidates.
Les critères d'éligibilité d'un matériau d'assemblage sont entre autres : sa facilité de mise en œuvre pour alimenter un module de dépôt, sa conductibilité électrique, sa capacité à être déposé en couche mince, sa stabilité physicochimique aux basses températures de mise en œuvre du procédé, son coût, sa dangerosité, ... Parmi ces six matériaux, bismuth, antimoine, plomb, thallium, et cadmium sont des composants polluants et dangereux pour l'environnement et pour l'homme, ce qui rend délicats les opérations de manipulation, de maintenance et de retraitement en fin de vie. Aussi il est préférable de les éviter. De plus bismuth, antimoine, thallium, cadmium sont des matériaux très coûteux. Le plomb moins cher a priori, le devient aussi dès que l'on considère la pureté nécessaire à la mise -en.-œuvre—du—procédé. De plus —leurs -conditions—de dépôt sont complexes : instabilité pendant le dépôt, dépôt en forme d'îlots. Ces matériaux sont moins facilement compatibles sur le plan physico-chimique avec les matériaux des substrats ou1 des couches déposées précédentes, et il peut se produire des phénomènes de rejet, c'est à dire que les dépôts n'adhèrent pas entre eux à cause de création d' inter- couches. Les températures nécessaires à l'obtention des conditions de fluage nécessaires au soudage/collage sont encore plus basses.The eligibility criteria for an assembly material are, inter alia: its ease of implementation for supplying a deposition module, its electrical conductivity, its capacity to be deposited in a thin layer, its physicochemical stability at low application temperatures. process, its cost, its dangerousness, ... Among these six materials, bismuth, antimony, lead, thallium, and cadmium are polluting components and dangerous for the environment and for the man, which makes delicate the Handling, maintenance and reprocessing operations at end of life. Also it is best to avoid them. Also bismuth, antimony, thallium, cadmium are very expensive materials. The cheaper lead a priori, becomes also as soon as we consider the purity necessary for the implementation-of-the-process. Moreover, their conditions of deposit are complex: instability during the deposit, deposit in the form of islands. These materials are less easily physicochemically compatible with the substrates materials or 1 of the previous deposited layers, and there may be phenomena of rejection, ie deposits do not adhere to each other because of Inter layer creation. The temperatures necessary to obtain the creep conditions necessary for welding / bonding are even lower.
L 'indium ne présente pas ces deux inconvénients et est
ainsi un candidat "particulièrement avantageux. L'indium présente une bonne conductibilité et une bonne1 adhérence.Indium does not have these two disadvantages and is as a candidate "particularly advantageous. Indium has good conductivity and good adhesion 1.
L'indium est simple et facile à déposer et permet des dépôts uniformes. L'indium présente une compatibilité physico chimique avec les métaux tels que le Cu, Cu/Ni, Cu/Ag, AisiIndium is simple and easy to deposit and allows uniform deposits. Indium has a physicochemical compatibility with metals such as Cu, Cu / Ni, Cu / Ag, Aisi
(inox) , Au, Cu/Ag, Al, Al/Ag et tous les alliages possibles avec ces matériaux. L'indium présente une compatibilité mécanique avec les matériaux (substrat ou matériaux de couches déposées précédemment) sans générer de modification des performances électriques des couches antérieurement déposées. L'indium est parfaitement isotrope, c'est à dire que ses propriétés physiques spatiales ne changent pas, quelque soit la direction dynamique moléculaire.(stainless steel), Au, Cu / Ag, Al, Al / Ag and all possible alloys with these materials. Indium has a mechanical compatibility with the materials (previously deposited substrate or layer materials) without modifying the electrical performance of previously deposited layers. Indium is perfectly isotropic, ie its spatial physical properties do not change, whatever the molecular dynamic direction.
Afin que le soudage/collage opère de manière optimale, il convient que les épaisseurs de chacune des deux _ couches minces 5, 6, respectivement déposées sur chacune des surfaces 3, 4, soient identiques.In order for the welding / bonding to work optimally, the thicknesses of each of the two thin layers 5, 6 respectively deposited on each of the surfaces 3, 4 should be identical.
Afin que le soudage/collage opère de manière optimale, il convient pour que l'interpénétration par diffusion moléculaire puisse se réaliser que ladite épaisseur de chacune des couches minces soit au moins égale à 200 nm +/- 5%.So that the welding / bonding operates optimally, it is appropriate for the interpenetration molecular diffusion can be realized that said thickness of each of the thin layers is at least equal to 200 nm +/- 5%.
Avantageusement, une épaisseur de 800nm +/-5%, notamment dans le cas de l'indium, est préférée. De même, une pureté d'au moins 99,95% du matériau constitutif des couches minces, est une condition de bonne qualité du soudage/collage obtenu.Advantageously, a thickness of 800 nm +/- 5%, especially in the case of indium, is preferred. Similarly, a purity of at least 99.95% of the constituent material of the thin layers is a good quality condition of the welding / bonding obtained.
Les matériaux constitutifs^ de chacun des substrats ~1~,—2y~ peuvent être choisis parmi de nombreux matériaux. Ainsi il est possible d'appliquer le procédé d'assemblage à des matériaux tels que verre, métaux ou encore cristaux. Il convient qu'il soit possible d'y déposer une couche mince de matériau d'assemblage. Cependant il est aussi possible de déposer des couches intermédiaires d'accrochage en cas de besoin, si le matériau d'assemblage se révélait incompatible du substrat 1, 2. De manière préférentielle pour les applications envisagées le substrat 1, 2, est constitué d'un matériau choisi parmi : tissu organique, matériau carboné
rigide, matériau carboné souple, ou matériau organique thermoformé . ^ The materials of each of the substrates 1 ~ ~, ~ 2y can be selected from numerous materials. Thus it is possible to apply the assembly process to materials such as glass, metals or crystals. It should be possible to deposit a thin layer of connecting material. However, it is also possible to deposit intermediate bonding layers, if necessary, if the connecting material proves incompatible with the substrate 1, 2. Preferably for the intended applications, the substrate 1, 2 consists of a material chosen from: organic fabric, carbonaceous material rigid, flexible carbonaceous material, or thermoformed organic material.
Une application particulièrement intéressante utilise des matériaux souples se présentant en feuille ou en film mince. Afin de rendre possible la diffusion moléculaire qui permet l'assemblage, il convient que lors de la mise en contact et du pressage des deux couches minces déposées 5, 6, le matériau d'assemblage atteigne des performances de fluage le plaçant dans des conditions propices à l'adhérence moléculaire, permettant une fusion à l'échelon moléculaire des deux couches déposées 5, 6.A particularly interesting application uses flexible materials in sheet or thin film. In order to make possible the molecular diffusion which allows the assembly, it is appropriate that during the contacting and pressing of the two deposited thin films 5, 6, the assembly material reaches creep performance placing it under favorable conditions. to molecular adhesion, allowing fusion at the molecular level of the two deposited layers 5, 6.
Lesdites performances de fluage sont obtenues dès que la température de réalisation de ces étapes devient négative.Said creep performance is obtained as soon as the temperature of completion of these steps becomes negative.
Cependant- un effet d'amélioration net de la qualité de l'assemblage est particulièrement observable lorsque ces étapes sont réalisées à une température inférieure à -15O0C.However, a net improvement effect of the quality of the assembly is particularly observable when these steps are carried out at a temperature below -15O 0 C.
Une température optimale réalisant ces conditions, notamment dans le cas de 1 ' indium et dans les conditions de pression de vide et de pression de pressage considérées, est égale à -1500C +/-2°C.An optimum temperature achieving these conditions, especially in the case of indium and under the conditions of vacuum pressure and pressing pressure considered, is equal to -150 0 C +/- 2 ° C.
L'inter diffusion moléculaire des deux couches 5, 6, est favorisée par une pression de pressage des deux substrats 1, 2, au moins égale à 45 pascal +/-3%.The molecular inter-diffusion of the two layers 5, 6 is favored by a pressing pressure of the two substrates 1, 2, at least equal to 45 pascal +/- 3%.
Une pression de vide minimale permet d'éviter les risques d'oxydation de surface des couches déposées 5, 6, toujours possible avec les hautes puretés de matériau d'assemblage utilisées. La pression de vide est avantageusement inférieure à—10"6 mbar, voire--même- 10-~—mbar—A minimum vacuum pressure makes it possible to avoid the risk of surface oxidation of the deposited layers 5, 6, which is always possible with the high purities of assembly material used. The vacuum pressure is advantageously less than -10 -6 mbar, or even -10- ~ -mbar-
Afin de mettre en œuvre ledit procédé d'assemblage, une machine 11 comprend _ une enceinte 12 sous vide. Dans la continuité de cette enceinte 12, la machine 11 comprend un premier module 7 apte à déposer une couche mince 5 de matériau d'assemblage, sur une première surface 3 d'un premier substrat 1 et un second module 8, pouvant être confondu avec le premier module 7, apte à déposer une couche mince 6 de même matériau sur une deuxième surface 4 d'un deuxième substrat 2.In order to implement said assembly method, a machine 11 comprises a vacuum chamber 12. In the continuity of this chamber 12, the machine 11 comprises a first module 7 capable of depositing a thin layer 5 of assembly material, on a first surface 3 of a first substrate 1 and a second module 8, which can be confused with the first module 7, able to deposit a thin film 6 of the same material on a second surface 4 of a second substrate 2.
Le dépôt peut être réalisé par tout dispositif capable de
déposer une couche mince de matériau sous vide. Ainsi il est possible de déposer par dépôt électrolytique, par évaporation sous vide, par pulvérisation cathodique ou par tout autre dispositif/procédé connu de l'homme du métier. Dans le cadre du procédé selon l'invention, compte tenu des matériaux d'assemblage envisagés, le dépôt est préférentiellement réalisé par pulvérisation cathodique.The deposit can be made by any device capable of deposit a thin layer of material under vacuum. Thus it is possible to deposit by electrolytic deposition, vacuum evaporation, sputtering or any other device / process known to those skilled in the art. In the context of the process according to the invention, in view of the assembly materials envisaged, the deposition is preferably carried out by sputtering.
La machine comprend encore un moyen permettant de mettre en contact ladite - première surface 3 et ladite deuxième surface 4, et un moyen permettant de presser ladite première surface 3 contre ladite deuxième surface 4 en appliquant un effort de pression.The machine further comprises means for contacting said first surface 3 and said second surface 4, and means for pressing said first surface 3 against said second surface 4 by applying a pressure force.
La machine est avantageusement apte à déposer des couches minces d'épaisseurs identiques. De même il est avantageux de déposer les deux couches de matériau, d'assemblage sur les deux substrats en même temps, afin d'obtenir deux surfaces de diffusion dans un même état physico-chimique .The machine is advantageously capable of depositing thin layers of identical thickness. Similarly, it is advantageous to deposit the two layers of material, assembly on the two substrates at the same time, in order to obtain two diffusion surfaces in the same physicochemical state.
Afin de placer les couches 5, 6, de matériau d'assemblage à la température permettant la diffusion moléculaire et donc le soudage, la machine 11 comprend encore au moins une centrale cryogénique permettant d'atteindre et de maintenir dans l'enceinte 12 une température inférieure adaptée. Dans le cas notamment de l'indium, cette température est au moins égale à -1500C.In order to place the layers 5, 6 of assembly material at the temperature permitting the molecular diffusion and therefore the welding, the machine 11 also comprises at least one cryogenic unit making it possible to reach and maintain in the chamber 12 a temperature lower adapted. In the case in particular of indium, this temperature is at least equal to -150 ° C.
Pour chaque matérUau, une température idéale où les caractéristiques de fluage sont atteintes peut être déterminée". La centrale— cryogénique est" "avantageusement" capable de réaliser cette température dans l'enceinte 12, ou au moins au niveau des substrats 1, 2, et dans les conditions de vide, et de la réguler ensuite avec une précision de l'ordre de +/-20C. Dans le cas de l'indium cette température est de -1500C +/-20C.For each material, an ideal temperature where the creep characteristics are achieved can be determined. " The cryogenic plant is " advantageously " capable of achieving this temperature in the enclosure 12, or at least at the level of the substrates 1, 2, and under vacuum conditions, and then regulate it with an accuracy of the order of +/- 20 ° C. In the case of indium, this temperature is -150 ° C. ± 20 ° C.
La machine est encore telle que le moyen de pressage est apte à appliquer une pression configurable et avantageusement asservie avec une précision de l'ordre de +/-3%. Dans les conditions de mise en œuvre du procédé cette pression est au moins égale à 45 pascal +/-3%.
La machine dispose encore d'au moins une pompe à vide capable de réaliser dans l'enceinte une pression de vide inférieure à 10~6 mbar.The machine is still such that the pressing means is able to apply a configurable pressure and advantageously controlled with an accuracy of the order of +/- 3%. Under the conditions of implementation of the process, this pressure is at least 45 pascal +/- 3%. The machine also has at least one vacuum pump capable of producing in the chamber a vacuum pressure of less than 10 ~ 6 mbar.
Un mode de réalisation particulièrement intéressant concerne des substrats 1, 2, de faible épaisseur, quelques dixièmes de mm, souples, en feuilles ou en films continus.A particularly interesting embodiment relates to substrates 1, 2, of small thickness, a few tenths of mm, flexible, sheets or continuous films.
Afin de traiter de tels substrats 1, 2, un mode de réalisation de la machine 11 est schématisé à la figure 4. La machine 11 comprend, dans une enceinte 12, au moins une paire de rouleaux presseurs 13 aptes à presser deux substrats 1,.2, de matériau souple en feuille. Sur la figure, les substrats 1, 2, arrivent du bas, où ils ont subi un dépôt 5, 6, de matériau d'assemblage au sein d'un module de dépôt (non représenté) placé dans ladite enceinte 12. Les substrats 1, 2 passent sur une première paire de rouleaux de guidage 14, puis entre deux rouleaux presseurs 13. Un module cryogénique est apte à réguler la température des rouleaux de guidage 14 à -1500C +/-100C et la température des rouleaux presseurs 13 à -1500C +/-2°C, afin de communiquer ces températures aux substrats 1, 2, durant leur passage sur ou entre lesdits rouleaux 13, 14. Les substrats 1, 2 assemblés par pressage forment un unique assemblage 15 qui quitte la machine 11 par le bas .In order to treat such substrates 1, 2, an embodiment of the machine 11 is shown schematically in FIG. 4. The machine 11 comprises, in an enclosure 12, at least one pair of pressure rollers 13 able to press two substrates 1, .2, flexible sheet material. In the figure, the substrates 1, 2 come from the bottom, where they have undergone a deposition 5, 6, of assembly material within a deposition module (not shown) placed in said enclosure 12. The substrates 1 , 2 pass over a first pair of guide rollers 14, then between two pressure rollers 13. A cryogenic module is able to regulate the temperature of the guide rollers 14 to -150 0 C +/- 10 0 C and the temperature of the rollers 13 to -150 0 C +/- 2 ° C, in order to communicate these temperatures to the substrates 1, 2, during their passage over or between said rollers 13, 14. The substrates 1, 2 assembled by pressing form a single assembly 15 who leaves the machine 11 from below.
Selon un mode de réalisation, l'enceinte 12 est entièrement constituée d'une double paroi formant une cavité d'une épaisseur de 50 mm.According to one embodiment, the chamber 12 consists entirely of a double wall forming a cavity with a thickness of 50 mm.
A l'intérieur de cette cavité circule de l'eau cyclée à 300 ~±itres-/seconde,- issue d' un -système—de—refroidissement en circuit fermé, dont la température ne dépasse pas la limite du point de rosée.Inside this cavity flows cycled water at 300 ~ ± itres- / second, - resulting from a -cooling-cooling system, whose temperature does not exceed the limit of the dew point.
Les . équipements cryogéniques spécifiques intégrés dans cette enceinte comprennent :The . Specific cryogenic equipment built into this chamber include:
- un premier système "Polycold" permettant d'obtenir des températures négatives inférieures à : -15O0C à +/- 100C, - le seuil de réglage de la température est de : - 1100C,a first "Polycold" system making it possible to obtain negative temperatures of less than: -15 ° C. to +/- 10 ° C., the threshold for adjusting the temperature is: -110 ° C.,
- un premier réseau de canalisation brasé sur les faces internes de l'enceinte 12, un second réseau de canalisations brasé sur des
radiateurs thermiques.a first brazed pipe network on the internal faces of the enclosure 12, a second network of pipes brazed on thermal radiators.
Les deux réseaux sont reliés entre le premier polycold et les radiateurs thermiques.The two networks are connected between the first polycold and the thermal radiators.
Les radiateurs thermiques sont placés à proximité des substrats 1, 2, lorsque ^ ces derniers pénètrent dans l'enceinte 12 de pressage, créant ainsi un premier volume de basse température.The heat radiators are placed near the substrates 1, 2, when the latter enter the chamber 12 for pressing, thus creating a first volume of low temperature.
Le vide est un mauvais échangeur thermique, la connaissance de la température réelle est impérative et impose de mettre en place des moyens de mesure afin de connaître les différentes températures en fonction de la localisation.The vacuum is a bad heat exchanger, the knowledge of the actual temperature is imperative and requires to set up measurement means to know the different temperatures depending on the location.
Cinq thermocouples cryogéniques sont positionnés :Five cryogenic thermocouples are positioned:
- deux thermocouples cryogéniques en contact avec les radiateurs thermiques,- two cryogenic thermocouples in contact with the thermal radiators,
- un thermocouple cryogénique positionné dans le vide,a cryogenic thermocouple positioned in a vacuum,
- deux thermocouples cryogéniques en contact avec les parois de l'enceinte 12.two cryogenic thermocouples in contact with the walls of the enclosure 12.
Un second système "Polycold" aux performances réfrigérantes identiques au premier et pourvu d'une précision de régulation de température plus fine : - 1500C +/- 2°C, est relié' directement aux rouleaux de guidage 14 et de pressageA second system "Polycold" refrigerant performance identical to the first and provided with a finer temperature control accuracy: - 150 0 C +/- 2 ° C, is connected directly to the guide rollers 14 and pressing
13.13.
Quatre thermocouples cryogéniques sont positionnés : - deux thermocouples cryogéniques placés à l'intérieur de chacun des deux rouleaux de pressage 13,Four cryogenic thermocouples are positioned: two cryogenic thermocouples placed inside each of the two pressing rollers 13,
- deux thermocouples cryogéniques positionnés sur le coté externe—des—rouleaux .two cryogenic thermocouples positioned on the outer side of the rollers.
Les rouleaux 13, 14, sont en acier inox AISI 420. Les surfaces de contact avec les substrats 1, 2, sont avantageusement revêtues d'un dépôt anti-adhérent tel que du sulfure de molybdène pulvérisé dans la masse et poli.The rollers 13, 14 are made of stainless steel AISI 420. The contact surfaces with the substrates 1, 2 are advantageously coated with a non-stick deposit such as molybdenum sulphide pulverized in the mass and polished.
Les rouleaux de guidage 14 sont chargés de diriger les substrats 1, 2, vers les rouleaux presseurs 14 en baissant la température des substrats" 1, 2.The guide rollers 14 are responsible for directing the substrates 1, 2 towards the pressure rollers 14 by lowering the temperature of the substrates " 1, 2.
Les rouleaux presseurs 13 sont automatiquement réglés en pression en fonction de la nature physico chimique des substrats 1, 2,' et des dépôts 5, 6.
La machine d'assemblage nécessite une phase de calibration et d'étalonnage "précis, notamment en ce qui concerne les paramètres cryogéniques. L'ensemble des paramètres ainsi déterminés est intégré dans un automate de pilotage de la machine afin de garantir la reproductibilité du procédé réalisé.
The pressure rollers 13 are automatically adjusted in pressure according to the physicochemical nature of the substrates 1, 2, and deposits 5, 6. The assembly machine requires a precise calibration and calibration phase, in particular as regards the cryogenic parameters, all the parameters thus determined being integrated into a machine control automaton in order to guarantee the reproducibility of the process. realized.
Claims
1. Procédé d'assemblage d'un premier substrat (1) avec un deuxième substrat (2) caractérisé en ce qu'il comprend les étapes suivantes réalisées sous vide et à température négative :1. A method of assembling a first substrate (1) with a second substrate (2), characterized in that it comprises the following steps carried out under vacuum and at a negative temperature:
- dépôt d'une couche (5) mince de matériau d'assemblage, sur une première surface (3) du premier substrat (1), - dépôt d'une couche (6) mince de même matériau sur une deuxième surface (4) du deuxième substrat (2) de forme complémentaire à ladite première surface (3),- Deposition of a thin layer (5) of assembly material, on a first surface (3) of the first substrate (1), - Deposition of a thin layer (6) of the same material on a second surface (4) second substrate (2) of complementary shape to said first surface (3),
- mise en contact de ladite première surface (3) et de ladite deuxième surface (4), - pressage de ladite première surface (3) contre ladite deuxième surface (4) .contacting said first surface (3) and said second surface (4), pressing said first surface (3) against said second surface (4).
2. Procédé selon la revendication 1, où ledit matériau d'assemblage est choisi parmi : bismuth, antimoine, plomb, thallium, cadmium ou indium.2. The method of claim 1, wherein said joining material is selected from: bismuth, antimony, lead, thallium, cadmium or indium.
3. Procédé selon la revendication 1 ou 2, où ledit matériau d'assemblage est de l' indium.3. The method of claim 1 or 2, wherein said joining material is indium.
4. Procédé selon l'une quelconque des revendications 1 à 3, où l'épaisseur des deux couches (5, 6) minces est identique.4. Method according to any one of claims 1 to 3, wherein the thickness of the two layers (5, 6) thin is identical.
5. Procédé selOn~"1 ' une"quelconque~des "revendications" 1 ~ k~~A~, où l'épaisseur de chacune des couches (5, 6) minces est au moins égale à 200 nm +/-5%.5. The method ~ "1 a" one ~ "claims" 1 ~ k ~~ A ~, wherein the thickness of each of the layers (5, 6) thin is at least equal to 200 nm +/- 5% .
6. Procédé selon la revendication 5, où l'épaisseur de chacune des couches (5, 6) minces est égale à 800 nm +/-5%.6. The method of claim 5, wherein the thickness of each of the thin layers (5, 6) is equal to 800 nm +/- 5%.
7. Procédé selon l'une quelconque des revendications 1 à 6, où le matériau des couches (5, 6) minces présente une pureté d'au moins 99, 95%. The method of any one of claims 1 to 6, wherein the material of the thin layers (5, 6) has a purity of at least 99.95%.
8. Procédé selon l'une quelconque des revendications 1 à 7, où les matériaux de chacun des substrats (1, 2) sont choisis parmi : tissu organique, matériau carboné rigide, matériau carboné souple, ou matériau organique thermoformé.8. Method according to any one of claims 1 to 7, wherein the materials of each of the substrates (1, 2) are selected from: organic fabric, rigid carbon material, flexible carbon material, or thermoformed organic material.
55
9. Procédé selon l'une quelconque des revendications 1 à 8, réalisé à une température inférieure à -1500C.9. Process according to any one of claims 1 to 8, carried out at a temperature below -150 ° C.
10 10. Procédé selon l'une quelconque des revendications 1 à 9, où la pression de pressage est au moins égale à 45 pascal +/- 3%.The process according to any one of claims 1 to 9, wherein the pressing pressure is at least 45 pascal +/- 3%.
11. Procédé selon l'une quelconque des revendications 1 à 10, 15 où la pression de vide est inférieure à 10~6 mbar.11. A process according to any one of claims 1 to 10, wherein the vacuum pressure is less than 10 ~ 6 mbar.
12. Machine d'assemblage d'un premier substrat (1) avec un deuxième substrat (2) caractérisée en ce qu'elle comprend :12. Machine for assembling a first substrate (1) with a second substrate (2) characterized in that it comprises:
- une enceinte sous vide (12), 0 - un module de dépôt (7) d'une couche" (5) mince d'un matériau d'assemblage, sur une première surface (3) du premier substrat (1) ,- a vacuum chamber (12), 0 - a deposit module (7) of a layer "(5) a thin bonding material, on a first surface (3) of the first substrate (1),
- un module de dépôt (8) d'une couche (6) mince de même matériau sur une deuxième surface (4) du deuxième substrat 5 (2),a deposition module (8) of a thin layer (6) of the same material on a second surface (4) of the second substrate (2),
- un moyen (13) de mise en contact de ladite première surface (3) et de ladite deuxième surface (4),means (13) for bringing said first surface (3) and said second surface (4) into contact,
~- un" moyen (13) de pre'ssage" "de ladite première surface ~(~3) contre ladite deuxième surface (4) 0 - une centrale cryogénique permettant d'atteindre et de maintenir dans l'enceinte (12) une température négative. ~ - a 'means (13) of pre' ng "" said first surface ~ (~ 3) against said second surface (4) 0 - a cryogenic plant to achieve and maintain in the enclosure (12) a negative temperature.
13. Machine selon la revendication 12, où lesdits modules (7, 8) de dépôt sont aptes à déposer des couches (5, 6) minces13. Machine according to claim 12, wherein said deposit modules (7, 8) are capable of depositing thin layers (5, 6).
35 d'épaisseurs identiques.Of identical thicknesses.
14. Machine selon la revendication 12 ou 13, comprenant encore une centrale cryogénique permettant d'atteindre et de maintenir dans l'enceinte (12) une température inférieure à - 1500C.14. Machine according to claim 12 or 13, further comprising a cryogenic plant for reaching and maintain in the enclosure (12) a temperature below - 150 0 C.
15. Machine selon l'une quelconque des revendications 12 à 14, où le moyen (13) de pressage est apte à appliquer une pression au moins égale à 45 pascal +/-3%.15. Machine according to any one of claims 12 to 14, wherein the means (13) for pressing is capable of applying a pressure at least equal to 45 pascal +/- 3%.
16. Machine selon l'une quelconque des revendications 12 à16. Machine according to any one of claims 12 to
15, comprenant encore au moins une pompe à vide capable de réaliser dans l'enceinte une pression de vide inférieure à15, further comprising at least one vacuum pump capable of producing in the chamber a vacuum pressure less than
1(T6 mbar.1 (T 6 mbar.
17. Machine selon l'une quelconque des revendications 12 à17. Machine according to any one of claims 12 to
16, comprenant au moins une paire de rouleaux presseurs (13) aptes à presser deux substrats (1, 2) de matériau souple en feuille .16, comprising at least one pair of pressure rollers (13) capable of pressing two substrates (1, 2) of flexible sheet material.
18. Machine selon la revendication 17, comprenant une première paire de rouleaux de guidage (14), au moins une paire de rouleaux presseurs (13) et un module cryogénique apte à réguler la température des rouleaux de guidage (14) à -1500C +/-100C et la température des rouleaux presseurs (13) à -150°C +/-20C. 18. Machine according to claim 17, comprising a first pair of guide rollers (14), at least one pair of pressure rollers (13) and a cryogenic module adapted to regulate the temperature of the guide rollers (14) to -150 0 C +/- 10 0 C and the temperature of the pressure rollers (13) at -150 ° C +/- 2 ° C.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR08/07175 | 2008-12-19 | ||
FR0807175A FR2940320B1 (en) | 2008-12-19 | 2008-12-19 | PROCESS FOR ASSEMBLING TWO VACUUM SUBSTRATES AND MACHINE FOR CARRYING OUT SAID METHOD |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2010076422A1 true WO2010076422A1 (en) | 2010-07-08 |
Family
ID=40801775
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/FR2009/001438 WO2010076422A1 (en) | 2008-12-19 | 2009-12-17 | Method for assembling two substrates in a vacuum at a negative temperature, and machine for implementing said method |
Country Status (2)
Country | Link |
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FR (1) | FR2940320B1 (en) |
WO (1) | WO2010076422A1 (en) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4011982A (en) * | 1975-09-15 | 1977-03-15 | Airco, Inc. | Surface joining by bonding of metal and deposited metal |
US5052611A (en) * | 1989-04-20 | 1991-10-01 | Indium Corporation Of America, Inc. | Method of forming a gasket of indium and braid |
US5148958A (en) * | 1991-12-23 | 1992-09-22 | Xerox Corporation | Thin film vacuum cold welding system |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2742922C2 (en) * | 1977-09-23 | 1984-03-08 | Siemens AG, 1000 Berlin und 8000 München | Method for the indirect connection of two parts |
GB2059339A (en) * | 1979-09-24 | 1981-04-23 | Challis A A L | Bonding two surfaces together |
US5811050A (en) * | 1994-06-06 | 1998-09-22 | Gabower; John F. | Electromagnetic interference shield for electronic devices |
EP1861333B1 (en) * | 2004-11-04 | 2018-12-26 | Microchips Biotech, Inc. | Compression and cold weld sealing methods and devices |
-
2008
- 2008-12-19 FR FR0807175A patent/FR2940320B1/en not_active Expired - Fee Related
-
2009
- 2009-12-17 WO PCT/FR2009/001438 patent/WO2010076422A1/en active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4011982A (en) * | 1975-09-15 | 1977-03-15 | Airco, Inc. | Surface joining by bonding of metal and deposited metal |
US5052611A (en) * | 1989-04-20 | 1991-10-01 | Indium Corporation Of America, Inc. | Method of forming a gasket of indium and braid |
US5148958A (en) * | 1991-12-23 | 1992-09-22 | Xerox Corporation | Thin film vacuum cold welding system |
Also Published As
Publication number | Publication date |
---|---|
FR2940320A1 (en) | 2010-06-25 |
FR2940320B1 (en) | 2011-12-23 |
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