WO2010071594A1 - A nanostructured device - Google Patents
A nanostructured device Download PDFInfo
- Publication number
- WO2010071594A1 WO2010071594A1 PCT/SE2009/051479 SE2009051479W WO2010071594A1 WO 2010071594 A1 WO2010071594 A1 WO 2010071594A1 SE 2009051479 W SE2009051479 W SE 2009051479W WO 2010071594 A1 WO2010071594 A1 WO 2010071594A1
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- WIPO (PCT)
- Prior art keywords
- nanowires
- group
- contact
- junction
- nanowire
- Prior art date
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Classifications
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/0405—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising semiconducting carbon, e.g. diamond, diamond-like carbon
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/068—Nanowires or nanotubes comprising a junction
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
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- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
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- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Nanotechnology (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Electromagnetism (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Led Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200980151050.7A CN102257645B (en) | 2008-12-19 | 2009-12-21 | A nanostructured device |
EP09833757.9A EP2359416B1 (en) | 2008-12-19 | 2009-12-21 | A nanostructured device |
JP2011542074A JP5383823B2 (en) | 2008-12-19 | 2009-12-21 | Nanostructured devices |
US13/133,371 US8664636B2 (en) | 2008-12-19 | 2009-12-21 | Nanostructured device |
US14/174,015 US9287443B2 (en) | 2008-12-19 | 2014-02-06 | Nanostructured device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE0850167A SE533531C2 (en) | 2008-12-19 | 2008-12-19 | Nanostructured device |
SE0850167-8 | 2008-12-19 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/133,371 A-371-Of-International US8664636B2 (en) | 2008-12-19 | 2009-12-21 | Nanostructured device |
US14/174,015 Continuation US9287443B2 (en) | 2008-12-19 | 2014-02-06 | Nanostructured device |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2010071594A1 true WO2010071594A1 (en) | 2010-06-24 |
Family
ID=42269047
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/SE2009/051479 WO2010071594A1 (en) | 2008-12-19 | 2009-12-21 | A nanostructured device |
Country Status (7)
Country | Link |
---|---|
US (2) | US8664636B2 (en) |
EP (1) | EP2359416B1 (en) |
JP (1) | JP5383823B2 (en) |
KR (1) | KR20110103394A (en) |
CN (1) | CN102257645B (en) |
SE (1) | SE533531C2 (en) |
WO (1) | WO2010071594A1 (en) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20120013076A (en) * | 2010-08-04 | 2012-02-14 | 삼성엘이디 주식회사 | Nanorod-based semiconductor light emitting device and method of manufacturing the same |
WO2012156620A2 (en) | 2011-05-18 | 2012-11-22 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | In-series electrical connection of light-emitting nanowires |
WO2012163899A1 (en) * | 2011-06-01 | 2012-12-06 | Commissariat à l'énergie atomique et aux énergies alternatives | Semiconductor structure for emitting light, and method for manufacturing such a structure |
US8350249B1 (en) * | 2011-09-26 | 2013-01-08 | Glo Ab | Coalesced nanowire structures with interstitial voids and method for manufacturing the same |
JP2013254876A (en) * | 2012-06-07 | 2013-12-19 | El-Seed Corp | Group iii nitride semiconductor device and manufacturing method therefor |
JP2014530504A (en) * | 2011-09-26 | 2014-11-17 | グロ アーベーGlo Ab | Nanowire-sized photoelectric structure and method of manufacturing the same |
JP2014533897A (en) * | 2011-12-01 | 2014-12-15 | コミサリア ア レネルジィ アトミーク エ オ ゼネ ルジイ アルテアナティーフCommissariata L’Energie Atomique Et Aux Energies Alternatives | Optoelectronic device comprising a nanowire having a core / shell structure |
JP2015500565A (en) * | 2011-12-07 | 2015-01-05 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | Optoelectronic semiconductor chip |
US9035278B2 (en) | 2011-09-26 | 2015-05-19 | Glo Ab | Coalesced nanowire structures with interstitial voids and method for manufacturing the same |
EP2912700A4 (en) * | 2012-10-26 | 2016-04-06 | Glo Ab | Nanowire led structure and method for manufacturing the same |
Families Citing this family (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008079078A1 (en) * | 2006-12-22 | 2008-07-03 | Qunano Ab | Elevated led and method of producing such |
SE533531C2 (en) * | 2008-12-19 | 2010-10-19 | Glo Ab | Nanostructured device |
KR20130136906A (en) | 2010-06-18 | 2013-12-13 | 글로 에이비 | Nanowire led structure and method for manufacturing the same |
KR101269053B1 (en) * | 2011-11-09 | 2013-06-04 | 삼성전자주식회사 | Nano lod light emitting device and method of manufacturing the same |
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Also Published As
Publication number | Publication date |
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EP2359416A4 (en) | 2014-06-04 |
JP5383823B2 (en) | 2014-01-08 |
JP2012513115A (en) | 2012-06-07 |
CN102257645B (en) | 2014-01-01 |
SE0850167A1 (en) | 2010-06-20 |
KR20110103394A (en) | 2011-09-20 |
CN102257645A (en) | 2011-11-23 |
SE533531C2 (en) | 2010-10-19 |
EP2359416B1 (en) | 2015-10-21 |
US20110240959A1 (en) | 2011-10-06 |
US20140246650A1 (en) | 2014-09-04 |
US9287443B2 (en) | 2016-03-15 |
US8664636B2 (en) | 2014-03-04 |
EP2359416A1 (en) | 2011-08-24 |
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