WO2010059560A1 - Dispositifs photovoltaïques comprenant des hétérojonctions - Google Patents
Dispositifs photovoltaïques comprenant des hétérojonctions Download PDFInfo
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- WO2010059560A1 WO2010059560A1 PCT/US2009/064562 US2009064562W WO2010059560A1 WO 2010059560 A1 WO2010059560 A1 WO 2010059560A1 US 2009064562 W US2009064562 W US 2009064562W WO 2010059560 A1 WO2010059560 A1 WO 2010059560A1
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- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 238000004544 sputter deposition Methods 0.000 claims abstract description 7
- 239000004065 semiconductor Substances 0.000 claims description 164
- 238000000151 deposition Methods 0.000 claims description 35
- 229910052751 metal Inorganic materials 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 17
- 229910052793 cadmium Inorganic materials 0.000 claims description 14
- 229940071182 stannate Drugs 0.000 claims description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 239000011701 zinc Substances 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 229910045601 alloy Inorganic materials 0.000 claims description 7
- 239000000956 alloy Substances 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- 229910016909 AlxOy Inorganic materials 0.000 claims description 6
- 229910020781 SixOy Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 229910052718 tin Inorganic materials 0.000 claims description 6
- 229910052725 zinc Inorganic materials 0.000 claims description 6
- 229910052726 zirconium Inorganic materials 0.000 claims description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 5
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 5
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 238000005546 reactive sputtering Methods 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 claims description 3
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical group [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 2
- QBMOKCWBZBOOTK-UHFFFAOYSA-N [O--].[O--].[O--].[O--].[Zr+4].[Sn+4] Chemical compound [O--].[O--].[O--].[O--].[Zr+4].[Sn+4] QBMOKCWBZBOOTK-UHFFFAOYSA-N 0.000 claims 2
- IZHOVLXXYOZDLW-UHFFFAOYSA-N [O-2].[Al+3].[Sn+4] Chemical compound [O-2].[Al+3].[Sn+4] IZHOVLXXYOZDLW-UHFFFAOYSA-N 0.000 claims 2
- BTFOWJRRWDOUKQ-UHFFFAOYSA-N [Si]=O.[Sn] Chemical compound [Si]=O.[Sn] BTFOWJRRWDOUKQ-UHFFFAOYSA-N 0.000 claims 2
- 229910000925 Cd alloy Inorganic materials 0.000 claims 1
- BRPRTVCQOQBVGM-UHFFFAOYSA-N oxosilicon;zinc Chemical compound [Zn].[Si]=O BRPRTVCQOQBVGM-UHFFFAOYSA-N 0.000 claims 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 claims 1
- UPAJIVXVLIMMER-UHFFFAOYSA-N zinc oxygen(2-) zirconium(4+) Chemical compound [O-2].[O-2].[O-2].[Zn+2].[Zr+4] UPAJIVXVLIMMER-UHFFFAOYSA-N 0.000 claims 1
- 229910001928 zirconium oxide Inorganic materials 0.000 claims 1
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 202
- 230000008021 deposition Effects 0.000 description 22
- 239000000463 material Substances 0.000 description 19
- 150000001875 compounds Chemical class 0.000 description 16
- -1 cadmium telluride compound Chemical class 0.000 description 11
- 229910044991 metal oxide Inorganic materials 0.000 description 11
- 229910004613 CdTe Inorganic materials 0.000 description 9
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 7
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 7
- 239000010408 film Substances 0.000 description 6
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 6
- 239000006096 absorbing agent Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 230000032258 transport Effects 0.000 description 5
- SKJCKYVIQGBWTN-UHFFFAOYSA-N (4-hydroxyphenyl) methanesulfonate Chemical compound CS(=O)(=O)OC1=CC=C(O)C=C1 SKJCKYVIQGBWTN-UHFFFAOYSA-N 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 4
- 239000002674 ointment Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- 230000009466 transformation Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 239000011358 absorbing material Substances 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 238000000224 chemical solution deposition Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 239000004408 titanium dioxide Substances 0.000 description 2
- 238000007704 wet chemistry method Methods 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910007709 ZnTe Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 125000005402 stannate group Chemical group 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03925—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIIBVI compound materials, e.g. CdTe, CdS
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Definitions
- This invention relates to photovoltaic devices and heterojunctions.
- layers of semiconductor material can be applied to a substrate with one layer serving as a window layer and a second layer serving as the absorber layer.
- the window layer can allow the penetration of solar radiation to the absorber layer, where the optical power is converted into electrical power.
- Some photovoltaic devices can use transparent thin films that are also conductors of electrical charge.
- the conductive thin films can include transparent conductive layers that contain a transparent conductive oxide (TCO), such as cadmium stannate.
- TCO transparent conductive oxide
- Aback electrode can be formed on the back surface of a semiconductor layer.
- the back electrode can include electrically conductive material.
- a photovoltaic device can include a transparent conductive layer on a substrate, a first semiconductor layer including a Mi_ x G x O y compound semiconductor, the first semiconductor layer positioned over the transparent conductive layer, and a second semiconductor layer including a cadmium telluride compound semiconductor, the second semiconductor layer positioned between a first semiconductor layer and a back metal contact.
- the M may be one of zinc or tin and the G may be one of aluminum, silicon, or zirconium and y, the oxygen content, may be determined by x and the valences of element M and G as in a stoichiometric compound, where y is equal to ((valence of M)(l-x)+(valence of G)(x))/2). Vacancies can be permitted.
- the M ⁇ x G x O y compound and the cadmium telluride compound can form a heterojunction.
- the cadmium telluride compound can be an alloy or doped composition of cadmium telluride.
- a method of manufacturing a photovoltaic device can include depositing a first semiconductor layer on a substrate, the first semiconductor layer including a Mi_ x G x O y compound semiconductor and depositing a second semiconductor layer between the first semiconductor layer and a back metal contact, the second semiconductor layer including a cadmium telluride compound.
- the method can further include depositing an interfacial layer between the first semiconductor layer and the second semiconductor layer to enhance a rectifying junction between the Mi_ x G x O y semiconductor and cadmium telluride compound.
- a system for generating electrical energy can include a multilayered photovoltaic cell including a transparent conductive layer on a substrate, a first semiconductor layer including a M ⁇ x G x O y compound semiconductor, the first semiconductor layer positioned over the transparent conductive layer, a second semiconductor layer including a cadmium telluride compound semiconductor, the second semiconductor layer positioned between a first semiconductor layer and a back metal contact, and a first electrical connection connected to a transparent conductive layer, and a second electrical connection connected to a back metal electrode adjacent to a second semiconductor layer.
- a system can further include an interfacial layer that enhances the rectifying junction between the Mi_ x G x O y and cadmium telluride compound semiconductors.
- FIG. 1 is a schematic of a photovoltaic device having multiple layers.
- FIG. 2 is a schematic of a system for generating electrical energy.
- Photovoltaic devices can include a rectifying junction between p-type or high resistivity cadmium telluride and a doped or undoped n-type semiconductor.
- the n-type semiconductor can be covered with a high resistivity buffer layer that may contain doped or undoped transparent oxides such as Sn ⁇ 2 , Si ⁇ 2 , Sn ⁇ 2 :Cd, Sn ⁇ 2 :Zn or CdZn ⁇ 2 .
- Previous attempts at constructing junctions between CdTe and various II- VI n-type semiconductors have not achieved commercially viable performance.
- previous attempts at constructing junctions between CdTe to p-type materials including such as Gi 2 Te and ZnTe have not achieved commercially viable performance.
- Both rectifying and low resistance junctions with a semiconductor layer may include thin film interfacial layers designed to improve electrical performance of the devices.
- Interfacial layers can include, for example, oxides between the cadmium telluride and metal electrode of the photovoltaic device.
- Interfacial layers can be deposited by wet chemistry, sputter etching and sputter o deposition, e-beam evaporation followed by thermal annealing, chemical bath deposition, atomic layer deposition method and other methods known to those in the art.
- a preferred process would be to make the cadmium stannate and then deposit on top of it a buffer layer that is in ideal band alignment to the cadmium telluride. Because oxides are easily made in a reactive sputtering process during the making of the cadmium stannate,5 there is a huge advantage for finding oxides that can meet the requirements.
- Both SnO 2 and ZnO have a conduction band offset to CdTe of about -0.5V.
- A0 possible route would be to replace ZnO or Sn ⁇ 2 by a material which is a compound of ZnO or Sn ⁇ 2 with a higher band offset oxide.
- Such higher conduction band offset materials are: Si ⁇ 2 , AI 2 O 3 and Zr ⁇ 2 . All of them have a positive conduction band offset ranging from 0.85V for ZrO 2 , 2V for Al 2 O 3 , and more than 3V for SiO 2 .
- the device structure can be: substrate/barrier-color suppression stack/cadmium5 stannate/ M ⁇ x G x O y /CdTe/back contact stack, where M is Zn or Sn, and G is Al, Si or Zr.
- the oxygen content, y may be determined by x and the valences of element M and G as in a stoichiometric compound.
- the layer does not need to be strongly conductive. Instead, the layer can be selected to match or closely match the conduction band offset of cadmium telluride. 0
- preferred values of x are as follows: for Sn ⁇ x Si x O y , x can be in the range of 0.05 to 0.25. For Sni_ x Al x O y , x can be in the range of 0.10 to 0.30.
- x can be in the range of 0.30 to 0.60.
- x can be in the range of 0.10 to 0.25.
- x can be in the range of 0.05 to 0.30.
- x can be in the range of 0.30 to 0.50.
- Thickness of the layer of Mi_ x G x O y can be in the range of 300Angstroms to 1500 Angstroms
- the substrate/barrier-color suppression stack/cadmium stannate/ Mi_ x G x O y can be made using room temperature sputtering, e.g., physical vapor deposition, from ceramic or metallic targets (in a reactive sputtering process).
- M ⁇ x G x O y may be deposited in the same vacuum sputter coater where the cadmium stannate is deposited.
- the deposition process may involve reactive sputtering of an alloy target M ⁇ x G x using an atmosphere of argon and oxygen mixture in the vacuum sputtering coater.
- the substrate which may be glass, can be optionally annealed. After annealing the device can be coated with cadmium telluride, for example, by vapor transport deposition.
- M ⁇ x G x O y can be made quickly and efficiently in a reactive sputtering process from extremely cheap targets.
- M ⁇ x G x O y has the potential to be a better diffusion barrier and more stable and inert structure than Sn ⁇ 2 or ZnO, facilitating phase transformation of cadmium stannate that is isolated from the annealing environment.
- Mi_ x G x O y may not be damaged by the cadmium stannate phase transformation and may maintain proper band alignment to CdTe due to its improved inertness compared to Sn ⁇ 2 or Zn.
- M ⁇ x G x O y is a single layer that will serve both as a buffer layer as well as a heterojunction partner to CdTe, eliminating a process step (CdS) and eliminating a significant problem (CdS coverage or pinholes).
- M ⁇ x G x O y can be made significantly thicker than CdS due to its high band gap, and thus its reduced absorption.
- the claimed devices and methods incorporate innovative combinations of semiconductors and employs device architectures that overcome limitations on existing device structures and enable enhanced photovoltaic device performance.
- a photovoltaic device 10 can include a transparent conductive layer 110 on a substrate 100, a first semiconductor layer 120, the first semiconductor layer including a zinc-metal oxide or silicon metal oxide semiconductor 102, the first semiconductor layer positioned over the transparent conductive layer, and a second semiconductor layer 140, the second semiconductor layer including a cadmium telluride semiconductor 104, the second semiconductor layer positioned between a first semiconductor layer and a back metal contact 150.
- a photovoltaic device 10 can include a transparent conductive layer 110 on a substrate 100, a first semiconductor layer 120, the first semiconductor layer including a zinc-metal oxide or silicon metal oxide semiconductor 102, the first semiconductor layer positioned over the transparent conductive layer, and a second semiconductor layer 140, the second semiconductor layer including a cadmium telluride semiconductor 104, the second semiconductor layer positioned between a first semiconductor layer and a back metal contact 150.
- a system 200 for generating electrical energy can include a multilayered photovoltaic cell 20 including a transparent conductive layer 210 on a substrate 230, a first semiconductor layer 220, the first semiconductor layer including a zinc-metal oxide or silicon metal oxide semiconductor 202, the first semiconductor layer positioned over the transparent conductive layer, a second semiconductor layer 240, the second semiconductor layer including a cadmium telluride semiconductor 204, the second semiconductor layer positioned between a first semiconductor layer and a back metal contact 250, and a first electrical connection 270b connected to a transparent conductive layer, and a second electrical connection 270a connected to a back metal electrode adjacent to a second semiconductor layer.
- a system can further include an interfacial layer 260 that enhances a rectifying junction between the cadmium telluride layer 240 and the M ⁇ x G x O y semiconductor layer 220.
- a first semiconductor layer can include a wide bandgap semiconductor.
- a first semiconductor layer can include a zinc-metal oxide or silicon metal oxide semiconductor or alloys thereof.
- a zinc-metal oxide or silicon metal oxide semiconductor compound can be a material with a chemical formula M ⁇ x G x O y , wherein M is selected from a group including zinc and tin and G is selected from a group including aluminum, silicon, and zirconium.
- a zinc-metal oxide or silicon metal oxide can be a zinc aluminum oxide, for example.
- a second semiconductor layer can include a cadmium telluride compound or alloys thereof.
- a heteroj unction can be formed between the Mi_ x G x O y compound and the CdTe compound.
- An interfacial layer can enhance a rectifying junction, such as a rectifying heterojunction between a M ⁇ x G x O y compound and a CdTe compound.
- An interfacial layer can be positioned on either side of a semiconductor layer or on both sides of a semiconductor layer.
- a semiconductor layer can include cadmium telluride for example.
- Low resistance hole transport between a semiconductor layer and a metal contact or a semiconductor layer and another semiconductor layer can be achieved by using high work function materials.
- a method of manufacturing a photovoltaic device can include depositing a first semiconductor layer on a substrate, the first semiconductor layer including a M ⁇ x G x O y compound semiconductor and depositing a second semiconductor layer between the first semiconductor layer and a back metal contact, the second semiconductor layer including a cadmium telluride compound.
- the method can further include depositing an interfacial layer between the first semiconductor layer and the second semiconductor layer to enhance a rectifying junction between the M ⁇ x G x O y semiconductor and cadmium telluride compound.
- a system for generating electrical energy can include a multilayered photovoltaic cell including a transparent conductive layer on a substrate, a first semiconductor layer including a Mi_ x G x O y compound semiconductor, the first semiconductor layer positioned over the transparent conductive layer, a second semiconductor layer including a CdTe compound semiconductor, the second semiconductor layer positioned between a first semiconductor layer and a back metal contact, and a first electrical connection connected to a transparent conductive layer and a second electrical connection connected to a back metal electrode adjacent to a second semiconductor layer.
- a system can further include an interfacial layer that enhances a rectifying junction between the M ⁇ x G x O y semiconductor and cadmium telluride compound.
- a semiconductor could be positioned adjacent to a copper-doped film.
- an undoped zinc telluride film could be positioned adjacent to a cadmium telluride layer and a second degenerately copper-doped zinc telluride film could be positioned the opposite side of the undoped zinc telluride film.
- interfaces between a first semiconductor layer and a second semiconductor layer, or between a semiconductor layer and a metal layer can have significant impact on device performance.
- interfaces may provide electrical defects that produce mid-gap energy levels to promote the recombination of electrons from the conduction band with holes from the valence band. Recombination of electrons and holes can be a loss mechanism for photovoltaic devices. Negative impacts of interfaces on device performance can be mitigated by several ways, such as careful selection of heterojunction partners to minimize the lattice mismatch between the two materials, grading material composition from one heteroj unction material to the other, and passivating the interface with oxygen, sulfur, hydrogen or other materials to tie up dangling bonds responsible for the mid-gap energy states.
- Amphiphilic molecules can also be used at the interfaces to alter electrical performance by creating a dipole layer on surfaces or at interfaces. Furthermore, even in the absence of lattice mismatch, the symmetry of a crystal lattice can be distorted by the existence of an interface between two materials of different electrical properties such that dipole layers form at the interface due to differences in the nature of chemical bonding between atoms of the heteroj unction partners.
- Both rectifying and low resistance junctions with a semiconductor layer such as a semiconductor layer including a cadmium telluride, may include thin film interfacial layers designed to improve electrical performance of the devices. Interfacial layers can include, for example, oxides between the cadmium telluride and metal electrode of the photovoltaic device. Interfacial layer can be by wet chemistry, sputter etching and sputter deposition, e- beam evaporation followed by thermal annealing, chemical bath deposition, or atomic layer deposition method.
- Previous devices employ a conventional cadmium sulfide layer as a wide bandgap n- type heteroj unction partner to cadmium telluride layer.
- a thick cadmium sulfide layer absorbs photons equivalent to approximately 6 mA/cm 2 out of approximately 30 mA/cm that could be absorbed by the cadmium telluride.
- it can be advantageous to use a thin cadmium sulfide layer to pass light with energy above the cadmium sulfide bandgap.
- the lower limit on cadmium sulfide layer thickness can be due to the requirement that the heterojunction partner contain sufficient charge to balance the negative space charge in the cadmium telluride.
- An n-type junction to cadmium telluride can therefore contain a second high resistivity n-type buffer layer on the side of the cadmium sulfide layer opposite to the cadmium telluride layer.
- the high resistivity buffer layer can both add to the positive space charge and mitigate effects of shunts through the cadmium sulfide film.
- Such buffer layers are described, for example in U.S. Patent 5,279,678, which is incorporated by reference in its entirety.
- An improved photovoltaic device can include an interfacial layer that accounts for the chemical potential of a semiconductor at the interface between a semiconductor layer, such as a cadmium telluride layer, and a high work function or wide bandgap semiconductor. Low resistance transport of holes between the semiconductor layer, such as a cadmium telluride layer and a back metal electrode can be achieved using a high work function or wide bandgap semiconductor in an interfacial layer between the semiconductor layer and the back metal electrode.
- a photovoltaic cell can have multiple layers.
- the multiple layers can include a bottom layer that can be a transparent conductive layer, a capping layer, a window layer, an absorber layer and a top layer.
- Each layer can be deposited at a different deposition station of a manufacturing line with a separate deposition gas supply and a vacuum- sealed deposition chamber at each station as required.
- the substrate can be transferred from deposition station to deposition station via a rolling conveyor until all of the desired layers are deposited. Additional layers can be added using other techniques such as sputtering. Electrical conductors can be connected to the top and the bottom layers respectively to collect the electrical energy produced when solar energy is incident onto the absorber layer.
- a top substrate layer can be placed on top of the top layer to form a sandwich and complete the photovoltaic cell.
- the bottom layer can be a transparent conductive layer, and can be, for example, a transparent conductive oxide such as cadmium stannate oxide, tin oxide, or tin oxide doped with fluorine.
- a transparent conductive oxide such as cadmium stannate oxide, tin oxide, or tin oxide doped with fluorine.
- Deposition of a semiconductor layer at high temperature directly on the transparent conductive oxide layer can result in reactions that negatively impact of the performance and stability of the photovoltaic device.
- Deposition of a capping layer of material with a high chemical stability such as silicon dioxide, dialuminum trioxide, titanium dioxide, diboron trioxide and other similar entities
- a high chemical stability such as silicon dioxide, dialuminum trioxide, titanium dioxide, diboron trioxide and other similar entities
- a capping layer can reduce the surface roughness of the transparent conductive oxide layer by filling in irregularities in the surface, which can aid in deposition of the window layer and can allow the window layer to have a thinner cross-section. The reduced surface roughness can help improve the uniformity of the window layer.
- Other advantages of including the capping layer in photovoltaic cells can include improving optical clarity, improving consistency in band gap, providing better field strength at the junction and providing better device efficiency as measured by open circuit voltage loss. Capping layers are described, for example, in U.S. Patent Publication 20050257824, which is incorporated by reference in its entirety.
- the window layer and the absorbing layer can include, for example, a binary semiconductor such as a layer of Mi_ x G x O y coated by a layer of cadmium telluride.
- a top layer can cover the semiconductor layers.
- the top layer can include a metal such as, for example, aluminum, molybdenum, nickel, titanium, tungsten, or alloys thereof. Deposition of semiconductor layers in the manufacture of photovoltaic devices is described, for example, in U.S. Pat. Nos. 5,248,349, 5,372,646, 5,470,397, 5,536,333, 5,945,163, 6,037,241, and 6,444,043, each of which is incorporated by reference in its entirety.
- the deposition can involve transport of vapor from a source to a substrate, or sublimation of a solid in a closed system.
- An apparatus for manufacturing photovoltaic cells can include a conveyor, for example a roll conveyor with rollers. Other types of conveyors are possible. The conveyor transports substrate into a series of one or more deposition stations for depositing layers of material on the exposed surface of the substrate. Conveyors are described in provisional U.S. Application 11/692,667, which is incorporated by reference in its entirety.
- the deposition chamber can be heated to reach a processing temperature of not less than about 450° C and not more than about 700° C, for example the temperature can range from 450-550° C, 550-650° C, 570-600° C, 600-640° C or any other range greater than 450° C and less than about 700° C.
- the deposition chamber includes a deposition distributor connected to a deposition vapor supply.
- the distributor can be connected to multiple vapor supplies for deposition of various layers or the substrate can be moved through multiple and various deposition stations with its own vapor distributor and supply.
- the distributor can be in the form of a spray nozzle with varying nozzle geometries to facilitate uniform distribution of the vapor supply.
- the bottom layer of a photovoltaic cell can be a transparent conductive layer.
- a thin capping layer can be on top of and at least covering the transparent conductive layer in part.
- the next layer deposited is the first semiconductor layer, which can serve as a window layer and can be thinner based on the use of a transparent conductive layer and the capping layer.
- the next layer deposited is the second semiconductor layer, which serves as the absorber layer.
- Other layers, such as layers including dopants, can be deposited or otherwise placed on the substrate throughout the manufacturing process as needed.
- the transparent conductive layer can be a transparent conductive oxide, such as a metallic oxide like cadmium stannate oxide.
- This layer can be deposited between the front contact and the first semiconductor layer, and can have a resistivity sufficiently high to reduce the effects of pinholes in the first semiconductor layer . Pinholes in the first semiconductor layer can result in shunt formation between the second semiconductor layer and the first contact resulting in a drain on the local field surrounding the pinhole. A small increase in the resistance of this pathway can dramatically reduce the area affected by the shunt.
- a capping layer can be provided to supply this increase in resistance.
- the capping layer can be a very thin layer of a material with high chemical stability.
- the capping layer can have higher transparency than a comparable thickness of semiconductor material having the same thickness. Examples of materials that are suitable for use as a capping layer include silicon dioxide, dialuminum trioxide, titanium dioxide, diboron trioxide and other similar entities.
- Capping layer can also serve to isolate the transparent conductive layer electrically and chemically from the first semiconductor layer preventing reactions that occur at high temperature that can negatively impact performance and stability.
- the capping layer can also provide a conductive surface that can be more suitable for accepting deposition of the first semiconductor layer. For example, the capping layer can provide a surface with decreased surface roughness.
- the semiconductor layers can include a variety of other materials, as can the materials used for the buffer layer and the capping layer.
- the device may contain interfacial layers between a second semiconductor layer and a back metal electrode to reduce resistive losses and recombination losses at the interface between the second semiconductor and the back metal electrode. Accordingly, other embodiments are within the scope of the following claims.
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Abstract
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CA2744342A CA2744342A1 (fr) | 2008-11-19 | 2009-11-16 | Dispositifs photovoltaiques comprenant des heterojonctions |
AU2009316838A AU2009316838A1 (en) | 2008-11-19 | 2009-11-16 | Photovoltaic devices including heterojunctions |
CN2009801549808A CN102282297A (zh) | 2008-11-19 | 2009-11-16 | 包括异质结的光伏装置 |
EP09828076.1A EP2370616A4 (fr) | 2008-11-19 | 2009-11-16 | Dispositifs photovoltaïques comprenant des hétérojonctions |
ZA2011/03778A ZA201103778B (en) | 2008-11-19 | 2011-05-24 | Photovoltaic devices including heterojunctions |
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US11601208P | 2008-11-19 | 2008-11-19 | |
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US (1) | US20100206372A1 (fr) |
EP (1) | EP2370616A4 (fr) |
CN (1) | CN102282297A (fr) |
AU (1) | AU2009316838A1 (fr) |
CA (1) | CA2744342A1 (fr) |
TW (1) | TW201027779A (fr) |
WO (1) | WO2010059560A1 (fr) |
ZA (1) | ZA201103778B (fr) |
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WO2012024557A3 (fr) * | 2010-08-20 | 2012-11-08 | First Solar, Inc. | Contact avant pour dispositif photovoltaïque |
CN102959120A (zh) * | 2010-06-30 | 2013-03-06 | 第一太阳能有限公司 | 锡酸钙溅射靶 |
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US20130311329A1 (en) * | 2012-03-29 | 2013-11-21 | Digimarc Corporation | Image-related methods and arrangements |
KR101292058B1 (ko) * | 2011-12-15 | 2013-08-01 | 삼성코닝정밀소재 주식회사 | 구리배선, 박막 트랜지스터 및 이에 사용되는 확산 방지막 증착용 스퍼터링 타겟 |
US9147582B2 (en) * | 2011-12-19 | 2015-09-29 | First Solar, Inc. | Manufacturing methods for semiconductor devices |
WO2013119550A1 (fr) * | 2012-02-10 | 2013-08-15 | Alliance For Sustainable Energy, Llc | Dispositifs photovoltaïques à film mince mini-conducteur avec une couche tampon à conductivité minimale |
EP2823081A1 (fr) | 2012-03-05 | 2015-01-14 | First Solar, Inc | Procédé et appareil destinés à former un oxyde conducteur transparent à l'aide d'hydrogène |
US20150270423A1 (en) | 2012-11-19 | 2015-09-24 | Alliance For Sustainable Energy, Llc | Devices and methods featuring the addition of refractory metals to contact interface layers |
JP6174251B2 (ja) * | 2014-05-22 | 2017-08-02 | 東芝三菱電機産業システム株式会社 | バッファ層の成膜方法 |
US10014423B2 (en) * | 2016-09-30 | 2018-07-03 | International Business Machines Corporation | Chalcogen back surface field layer |
CN110965025B (zh) * | 2019-12-20 | 2021-07-23 | 平顶山学院 | 一种CdS/Si纳米薄膜异质结的制备方法 |
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- 2009-11-16 WO PCT/US2009/064562 patent/WO2010059560A1/fr active Application Filing
- 2009-11-16 CN CN2009801549808A patent/CN102282297A/zh active Pending
- 2009-11-16 CA CA2744342A patent/CA2744342A1/fr not_active Abandoned
- 2009-11-16 AU AU2009316838A patent/AU2009316838A1/en not_active Abandoned
- 2009-11-16 EP EP09828076.1A patent/EP2370616A4/fr not_active Withdrawn
- 2009-11-18 US US12/620,984 patent/US20100206372A1/en not_active Abandoned
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CN102959120A (zh) * | 2010-06-30 | 2013-03-06 | 第一太阳能有限公司 | 锡酸钙溅射靶 |
CN102959120B9 (zh) * | 2010-06-30 | 2018-08-21 | 第一太阳能有限公司 | 锡酸镉溅射靶 |
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Also Published As
Publication number | Publication date |
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EP2370616A1 (fr) | 2011-10-05 |
EP2370616A4 (fr) | 2015-01-21 |
AU2009316838A1 (en) | 2010-05-27 |
CN102282297A (zh) | 2011-12-14 |
US20100206372A1 (en) | 2010-08-19 |
TW201027779A (en) | 2010-07-16 |
CA2744342A1 (fr) | 2010-05-27 |
ZA201103778B (en) | 2012-01-25 |
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