WO2010051365A2 - Improving dark currents and reducing defects in image sensors and photovoltaic junctions - Google Patents
Improving dark currents and reducing defects in image sensors and photovoltaic junctions Download PDFInfo
- Publication number
- WO2010051365A2 WO2010051365A2 PCT/US2009/062545 US2009062545W WO2010051365A2 WO 2010051365 A2 WO2010051365 A2 WO 2010051365A2 US 2009062545 W US2009062545 W US 2009062545W WO 2010051365 A2 WO2010051365 A2 WO 2010051365A2
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
- H01L21/76237—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials introducing impurities in trench side or bottom walls, e.g. for forming channel stoppers or alter isolation behavior
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Element Separation (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP09824126.8A EP2342751A4 (en) | 2008-10-31 | 2009-10-29 | Improving dark currents and reducing defects in image sensors and photovoltaic junctions |
CN2009801425561A CN102203944B (en) | 2008-10-31 | 2009-10-29 | Improving dark currents and reducing defects in image sensors and photovoltaic junctions |
JP2011534761A JP2012507871A (en) | 2008-10-31 | 2009-10-29 | Improve dark current and reduce defects in image sensors and photovoltaic junctions |
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11001308P | 2008-10-31 | 2008-10-31 | |
US61/110,013 | 2008-10-31 | ||
US14863909P | 2009-01-30 | 2009-01-30 | |
US61/148,639 | 2009-01-30 | ||
US12/607,643 | 2009-10-28 | ||
US12/607,643 US8815634B2 (en) | 2008-10-31 | 2009-10-28 | Dark currents and reducing defects in image sensors and photovoltaic junctions |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2010051365A2 true WO2010051365A2 (en) | 2010-05-06 |
WO2010051365A3 WO2010051365A3 (en) | 2010-08-12 |
Family
ID=42129549
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2009/062545 WO2010051365A2 (en) | 2008-10-31 | 2009-10-29 | Improving dark currents and reducing defects in image sensors and photovoltaic junctions |
Country Status (7)
Country | Link |
---|---|
US (1) | US8815634B2 (en) |
EP (1) | EP2342751A4 (en) |
JP (1) | JP2012507871A (en) |
KR (1) | KR20110094181A (en) |
CN (1) | CN102203944B (en) |
TW (1) | TW201030953A (en) |
WO (1) | WO2010051365A2 (en) |
Cited By (2)
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TWI505454B (en) * | 2011-07-26 | 2015-10-21 | Sharp Kk | Solid-state imaging apparatus and driving method thereof, manufacturing method of solid-state imaging apparatus, and electronic information device |
US11948956B2 (en) | 2018-10-08 | 2024-04-02 | Samsung Electronics Co., Ltd. | Image sensors including an amorphous region and an electron suppression region |
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EP2304803A1 (en) * | 2008-06-11 | 2011-04-06 | Solar Implant Technologies Inc. | Solar cell fabrication using implantation |
US8749053B2 (en) | 2009-06-23 | 2014-06-10 | Intevac, Inc. | Plasma grid implant system for use in solar cell fabrications |
KR20120137361A (en) * | 2010-02-09 | 2012-12-20 | 인테벡, 인코포레이티드 | An adjustable shadow mask assembly for use in solar cell fabrications |
TWI469368B (en) * | 2010-11-17 | 2015-01-11 | Intevac Inc | Direct current ion implantation for solid phase epitaxial regrowth in solar cell fabrication |
SG10201508582WA (en) | 2011-11-08 | 2015-11-27 | Intevac Inc | Substrate processing system and method |
JP5856868B2 (en) * | 2012-02-17 | 2016-02-10 | 国立大学法人九州工業大学 | Fabrication method of CMOS and trench diode on the same substrate |
KR102025718B1 (en) * | 2012-05-15 | 2019-09-26 | 삼성전자주식회사 | Semiconductor device and method of fabricating the same |
US20140048897A1 (en) * | 2012-08-16 | 2014-02-20 | Omnivision Technologies, Inc. | Pixel with negatively-charged shallow trench isolation (sti) liner |
MY178951A (en) | 2012-12-19 | 2020-10-23 | Intevac Inc | Grid for plasma ion implant |
JP2014130922A (en) * | 2012-12-28 | 2014-07-10 | Toshiba Corp | Semiconductor device and manufacturing method of the same |
JP6265709B2 (en) | 2013-11-27 | 2018-01-24 | ルネサスエレクトロニクス株式会社 | Semiconductor device and manufacturing method thereof |
US9748290B2 (en) * | 2014-02-03 | 2017-08-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Mechanisms for forming image sensor with lateral doping gradient |
US9984917B2 (en) | 2014-05-21 | 2018-05-29 | Infineon Technologies Ag | Semiconductor device with an interconnect and a method for manufacturing thereof |
KR102252647B1 (en) | 2014-07-11 | 2021-05-17 | 삼성전자주식회사 | Pixel of an image sensor and image sensor |
JP2016134614A (en) * | 2015-01-22 | 2016-07-25 | ルネサスエレクトロニクス株式会社 | Method of manufacturing semiconductor device |
JP6491509B2 (en) * | 2015-03-25 | 2019-03-27 | キヤノン株式会社 | Solid-state imaging device and manufacturing method thereof |
TWI550716B (en) * | 2015-07-08 | 2016-09-21 | 力晶科技股份有限公司 | Method of fabricating semiconductor device |
US9847363B2 (en) * | 2015-10-20 | 2017-12-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device with a radiation sensing region and method for forming the same |
CN106981495B (en) * | 2016-01-15 | 2019-10-25 | 中芯国际集成电路制造(上海)有限公司 | A kind of cmos image sensor and preparation method thereof |
KR102394284B1 (en) * | 2017-04-10 | 2022-05-04 | 에스케이하이닉스 주식회사 | Image sensor and method for fabricating the same |
US10304886B2 (en) * | 2017-09-28 | 2019-05-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Back-side deep trench isolation (BDTI) structure for pinned photodiode image sensor |
US10672810B2 (en) * | 2017-10-31 | 2020-06-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | CMOS image sensor with shallow trench edge doping |
EP3891248A4 (en) | 2018-12-03 | 2022-01-19 | FUJIFILM Electronic Materials U.S.A, Inc. | Etching compositions |
US11721774B2 (en) * | 2020-02-27 | 2023-08-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Full well capacity for image sensor |
US20220059582A1 (en) * | 2020-08-20 | 2022-02-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus and methods for effective impurity gettering |
CN113764542A (en) * | 2021-08-31 | 2021-12-07 | 天津大学 | Method for improving infrared response of silicon-based detector by helium ion implantation |
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-
2009
- 2009-10-28 US US12/607,643 patent/US8815634B2/en not_active Expired - Fee Related
- 2009-10-29 KR KR1020117012200A patent/KR20110094181A/en not_active Application Discontinuation
- 2009-10-29 JP JP2011534761A patent/JP2012507871A/en active Pending
- 2009-10-29 CN CN2009801425561A patent/CN102203944B/en not_active Expired - Fee Related
- 2009-10-29 EP EP09824126.8A patent/EP2342751A4/en not_active Withdrawn
- 2009-10-29 WO PCT/US2009/062545 patent/WO2010051365A2/en active Application Filing
- 2009-10-30 TW TW098136893A patent/TW201030953A/en unknown
Non-Patent Citations (1)
Title |
---|
See references of EP2342751A4 * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI505454B (en) * | 2011-07-26 | 2015-10-21 | Sharp Kk | Solid-state imaging apparatus and driving method thereof, manufacturing method of solid-state imaging apparatus, and electronic information device |
US9793315B2 (en) | 2011-07-26 | 2017-10-17 | Sharp Kabushiki Kaisha | Solid-state imaging apparatus for converting incident light entered from one surface into electrical signals on another surface |
US11948956B2 (en) | 2018-10-08 | 2024-04-02 | Samsung Electronics Co., Ltd. | Image sensors including an amorphous region and an electron suppression region |
Also Published As
Publication number | Publication date |
---|---|
TW201030953A (en) | 2010-08-16 |
EP2342751A2 (en) | 2011-07-13 |
WO2010051365A3 (en) | 2010-08-12 |
KR20110094181A (en) | 2011-08-22 |
US20100110239A1 (en) | 2010-05-06 |
CN102203944A (en) | 2011-09-28 |
JP2012507871A (en) | 2012-03-29 |
US8815634B2 (en) | 2014-08-26 |
CN102203944B (en) | 2013-10-09 |
EP2342751A4 (en) | 2013-08-21 |
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