WO2010048084A2 - Électrode et modèle de couplage de puissance pour un processus uniforme dans une chambre de pecvd à grande surface - Google Patents

Électrode et modèle de couplage de puissance pour un processus uniforme dans une chambre de pecvd à grande surface Download PDF

Info

Publication number
WO2010048084A2
WO2010048084A2 PCT/US2009/061161 US2009061161W WO2010048084A2 WO 2010048084 A2 WO2010048084 A2 WO 2010048084A2 US 2009061161 W US2009061161 W US 2009061161W WO 2010048084 A2 WO2010048084 A2 WO 2010048084A2
Authority
WO
WIPO (PCT)
Prior art keywords
electrode
backing plate
ferrites
current
ferrite
Prior art date
Application number
PCT/US2009/061161
Other languages
English (en)
Other versions
WO2010048084A3 (fr
Inventor
Jozef Kudela
Tsutomu Tanaka (Tom)
Original Assignee
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/493,866 external-priority patent/US20100104772A1/en
Priority claimed from US12/493,721 external-priority patent/US20100104771A1/en
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Publication of WO2010048084A2 publication Critical patent/WO2010048084A2/fr
Publication of WO2010048084A3 publication Critical patent/WO2010048084A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma

Definitions

  • Figures 5C and 5D show the effect of placing magnetic material or ferrites on the edges of the electrode.
  • Figure 6 shows the effects of utilizing multiple ferrite boundaries on plasma distribution.
  • Embodiments discussed herein generally include electrodes having parallel ferrite boundaries that suppress RF currents perpendicular to the ferrite boundary and absorb magnetic field components parallel to the boundary.
  • the ferrites cause the standing wave to stretch outside the ferrites and shrink inside the ferrite.
  • a plurality of power sources are coupled to the electrode.
  • the phase of the RF or VHF current delivered from the power sources may be modulated to move the standing wave that is perpendicular to the ferrites in a direction parallel to the ferrites.
  • the RF or VHF current on the uncovered electrode area will be a plane wave, quasi-uniform (in a direction perpendicular to the ferrites) propagating in the direction parallel to the ferrites.
  • the uniformity of the generated plasma can be altered to provide an improved plasma processing result.
  • the ferrite elements may also be used to alter the RF standing wave patterns and generated field lines in various directions within the plasma processing chamber. In general, RF currents that are formed in a direction perpendicular to the boundary of the ferrite element are suppressed due to the preferential flow of the generated magnetic field through the ferrite element rather than through free-space, and the RF currents in a direction parallel to the ferrite boundary will be enhanced.
  • the substrate 110 may be placed on a susceptor 108 when in the apparatus 100.
  • the susceptor 108 may be raised and lowered on a shaft 112.
  • the shaft 112 and the susceptor 108 may comprise a conductive material, such as aluminum.
  • the apparatus 100 may be evacuated by a vacuum pump 114.
  • a valve 116 may be coupled between the chamber and the vacuum pump 114 to adjust the vacuum level of the apparatus 100.
  • the ferrites 132 also need not be at the edge of the backing plate 126 or directly in contact with the backing plate 126.
  • the ferrites 132 can be proximate to the backing plate 126.
  • the ferrite's 132 relative permeability, orientation and geometry will shape the fields created by the delivery of RF current to the backing plate 126 and gas distribution showerhead 128. By orienting the ferrites 132, the generated standing waves in the processing area 146 of the PECVD apparatus 100 will be altered.
  • bar shaped ferrites 132 may extend along the edge of the backing plate 126 perpendicular to the slit valve opening 106 instead of the edges parallel to the slit valve opening 106. Additionally, if desired, the ferrites 132 may be present on other edges. However, if ferrites 132 are present on other edges, it may be necessary to have some gaps therebetween to permit the RF current to travel down to the gas distribution showerhead 128. In other embodiments, the ferrites 132 may be configured in a circular, arc, or other desired shape to further reduce non-uniformities in the plasma formed in the processing area 146. The ferrites 132 are used to permit the applied current to follow a predetermined path such that the plasma is substantially uniform in a predetermined direction.
  • Figure 1C is a schematic isometric view of the backing plate 126 of Figure 1 B that shows the RF current suppressed from passing along the backing plate 126 where the ferrites 132 are situated such that little or no RF current passes along the side parallel to the ferrite 132.
  • the RF current may pass freely down the side 152.
  • the ferrite 132 may, however, reduce or prevent the RF current from traveling down the side in the area 154 directly underneath the ferrite 132.
  • the apparatus 100 there are four walls 102. Of those four walls 102, three of the walls 102 are substantially identical and look substantially identical to the RF current (in absence of the ferrites) when it travels thereon returning to the power source 120 as shown by arrows "B".
  • the fourth wall 102 is different than the other walls 102 and looks different to the RF current as it returns to the power source 120.
  • the fourth wall 102 has the slit valve opening 106 formed therethrough.
  • the RF current travels a circuitous path along the wall 102 having the slit valve opening 106.
  • the RF current actually travels around the slit valve opening 106.
  • the RF current traveling along the wall 102 having the slit valve opening 106 has a longer inductive path to return to the power source 120 as compared to the three other walls 102.
  • Some RF current may, however, may return to the source 120 along the walls 102 parallel to the slit valve opening 106 (y-direction in Figure 1A-1C) (and hence, the ferrites 132), but the amount of RF current that flows along the walls 102 parallel to the slit valve opening 106 (and hence, the ferrites 132) is insignificant relative to the RF current returning to the source 120 along the walls 102 perpendicular to the slit valve opening 106 (and hence, the ferrites 132). Therefore, because little or no RF current returns to the source 120 along the walls 102 parallel to the slit valve opening 106 (and hence, the ferrites 132), the negative effect of the slit valve opening 106 may be substantially reduced, or in some cases, eliminated.
  • the ferrites cause the standing wave to stretch outside the ferrites and thus shrinking its affect in the regions found between the ferrites 132.
  • the RF current on the uncovered electrode area will be a quasi-uniform plane wave in a direction perpendicular to the ferrites, but will propagate in the direction parallel to the ferrites.
  • the single RF feed location induces the same fields/currents on the gas distribution showerhead 128 as if two "mirror feeds" had been induced to the bottom of the showerhead at the edges of the gas distribution showerhead 128.
  • the mirror feeds would be spaced by two electrode widths (2w), be same phased, and be prorated in amplitude.
  • a standing wave would be formed on the gas distribution showerhead 128 with a maximum in the center.
  • the single RF feed will induce a standing wave pattern that has a maximum in the center of the bottom surface of the gas distribution showerhead 128.
  • processing gas is introduced from the gas source 118 through the backing plate 126 and into the plenum 148. Then, the processing gas passes through the gas passages 130 formed in the gas distribution showerhead 128 and into the processing area 146.
  • the RF current flows along the tube 122, the back surface of the backing plate 126, the suspension 134, and the front surface of the showerhead 128.
  • the RF fields then ignite the processing gas to form a plasma that causes the excited gas species found in the processing area 146 to deposit a desired material onto the substrate 110.
  • the RF current propagates through the processing area 146 to the substrate 110 and along the shadow frame 138, the straps 142, the walls 102, and the lid 124 back to the power source 120.
  • the straps 142 may be present along the walls 102 perpendicular to the ferrites 132 but not present on the walls parallel to the ferrites 132.
  • the straps 142 may be coupled to all walls 102.
  • ferrite has been used in the present application, it is to be understood that any ferromagnetic material may be used including non-oriented, amorphous ferromagnetic material. Additionally, magnets may be used. The permeability of the ferrites may be predetermined to suit the needs of the user.
  • each power source 202A, 220B is coupled to the backing plate 226 at multiple locations. However, it is to be understood that each power source 220A, 220B may be coupled to the backing plate 226 at one location. In one embodiment, the backing plate 226 may have a size of greater than about 60,000 square centimeters.
  • Some RF or VHF current may, however, return to the sources 220A, 220B along the walls 202 parallel to the slit valve opening 206 (and hence, the ferrites 232), but the amount of RF or VHF current that flows along the walls 202 parallel to the slit valve opening 206 (and hence, the ferrites 232) is insignificant relative to the RF or VHF current returning to the sources 220A, 220B along the walls 202 perpendicular to the slit valve opening 206 (and hence, the ferrites 232).
  • the negative effect of the slit valve opening 206 may be substantially reduced, or in some cases, eliminated.
  • the ferrites 232 By suppressing RF or VHF current with the ferrites spanning a length of the backing plate 226 parallel to the slit valve opening 206, the RF or VHF current in the direction of the slit valve opening (and opposite thereto) is controlled. However, because no ferrites 232 are perpendicular to the slit valve opening 206 (or vice versa), the RF or VHF current that runs parallel to the slit valve opening 206 (or vice versa) is not controlled. Thus, the ferrites 232 remove one degree of uncertainty to control of the RF or VHF current. The control of the RF or VHF current in the direction parallel to the slit valve opening 206 aids in plasma uniformity and thus, deposition uniformity.
  • processing gas is introduced from the gas source 218 through the backing plate 226 and into the plenum 248. Then, the processing gas passes through the gas passages 230 formed in the gas distribution showerhead 228 and into the processing area 246.
  • the RF or VHF current flows along the tube 222, the back surface of the backing plate 226, the bracket 234, and the front surface of the showerhead 228.
  • the induced RF or VHF fields then ignite the processing gas into a plasma which deposits material onto the substrate 210.
  • the RF or VHF current propagates through the plasma to the substrate 210 and along the shadow frame 238, the straps 242, the walls 202, and the lid 224 back to the power source 220A, 220B.
  • the straps 242 may be present along the walls 202 perpendicular to the ferrites 232 but not present on the walls parallel to the ferrites 232.
  • the straps 242 may be coupled to all walls 202.
  • ferrites 232 have been discussed as being located behind the backing plate 226 on the atmosphere side of the chamber, the ferrites 232 may be placed in other locations as well. When the ferrites 232 are placed on the front surface of the gas distribution showerhead 228, the ferrites 232 may be enclosed in a cover such as a dielectric or ceramic cover to prevent the ferrites 232 from sputtering. Other potential locations for the ferrites 232 include under the susceptor 208, adjacent the backing plate 226, and adjacent the chamber walls 202 between the substrate 210 and the gas distribution showerhead 228. Additionally, while ferrites 232 have been described, it is to be understood that any ferromagnetic material, conducting or non-conducting, non-oriented, or ferromagnetic material, or oriented material such as magnets may be used.
  • Figure 3A is a schematic isometric top view of an electrode having a single, substantially centered RF feed location 304 according to one embodiment.
  • Figure 3A shows ferrite boundaries along two sides of the electrode.
  • the ferrite boundaries on the electrode edges move part of the standing wave profile into the ferrites (i.e., the standing wave pattern on the uncovered electrode area will be spread and thus, more uniform).
  • the RF currents may be enhanced in the direction parallel to the ferrite boundary and suppressed in the direction perpendicular to the ferrite boundary.
  • a plane wave like propogation between the ferrite boundaries i.e., magnetic field components parallel to the ferrite boundaries move into the ferrites may be present.
  • FIG. 3B is a schematic top view of an apparatus 320 according to one embodiment.
  • the apparatus includes an electrode 322 having ferrites 324 that span the length of two parallel sides of the electrode 322.
  • the electrode 322 may be hypothetically divided in half at the center line 334 and separate power sources 326, 328 may be applied to each half 330, 332 of the electrode 322.
  • the power sources 326, 328 may be coupled to the halves 330, 332 at locations spaced from the edges 336, 338 of the halves 330, 332.
  • the power sources 326, 328 may be coupled to the halves 330, 332 at the edges 336, 338.
  • FIG. 3C is a schematic isometric view of an apparatus 350 according to one embodiment.
  • ferrites 352 span a length of an electrode 356 along an edge 360.
  • the electrode 356 is positioned opposite the susceptor 358.
  • a plurality of power sources 354A, 354B are shown coupled to the electrode 356, each coupled at a plurality of contact points 364, 366, 368, 370, 372, 374, 376, 378.
  • One power source 354B is coupled to an edge 362 of the electrode 356.
  • the other power source 354A is coupled at a plurality of contact points 364, 366, 368, 370 at an edge opposite to the edge 362.
  • the boundary condition is affected by the magnetic material.
  • a high magnetic permeability material will force the magnetic field, and thus the wave front, to be perpendicular to the edges and help form plane waves.
  • a high magnetic permeability may increase the electrical length to the side and effectively extend the electrode.
  • the center high maximum of the standing wave when viewed isometrically, will have a dome shape such as shown in Figure 3D.
  • the RF current is flowing to the bottom surface of the electrode from all directions and thus, confluences at the center to create the dome shape shown in Figure 3D.
  • the dome shape may be pulled off center due to the slit valve effect.
  • the standing wave maximum or peak spreads out in a direction perpendicular to the transversely oriented ferrite boundaries as compared to when no ferrites are present. Because the maximum or peak of the standing wave is substantially constant across substantially the entire distance between the ferrites, the plasma density may be substantially uniform across the electrode in the x-direction (showerhead in PECVD) as shown in Figure 3E. It is believed that the RF current flowing to the bottom surface of the electrode from the sides that did not have ferrites thereon will form the standing wave in the y-direction, as shown in Figure 3E. Thus, the RF current is flowing to the bottom surface of the electrode from only two sides.
  • the ferrites have thus eliminated or substantially reduced the non-uniformity that would have been created by RF current flowing from the sides along which the ferrites are oriented (x- direction).
  • the standing wave maximum is not compressed towards the center from the other two sides. In fact, little or no compression of the standing wave maximum towards the center occurs from the other two sides. Without the compression from the other two sides, the standing wave maximum or peak from the two sides having RF current flowing therefrom may be substantially uniformly spread across the width of the electrode.
  • the standing wave profile shown in Figure 3E has a maximum or peak spanning the substantial width of the electrode.
  • the standing wave of Figure 3D will have a dome shape with the highest point that may be in the substantial center of the electrode or even shifted to a side due to the slit valve effect.
  • the standing wave in the y-direction may span across substantially the entire width of the electrode perpendicular to the ferrite material (x-direction).
  • the ferrites are positioned in a direction perpendicular to the highest point of the standing wave (y- direction shown in Figure 3A). Therefore, the standing wave can be extended in the direction perpendicular to the ferrite material such that the plasma may be substantially uniformly distributed in the direction perpendicular to the ferrites.

Abstract

Les modes de réalisation de l’invention décrits ici concernent généralement des électrodes qui présentent des limites de ferrite parallèles supprimant les courants RF perpendiculaires à la limite de la ferrite et absorbant les composants de champ magnétique parallèles à la limite. Les ferrites ont pour effet que l’onde stationnaire s’allonge vers l’extérieur des ferrites et se rétracte à l’intérieur de la ferrite. Une pluralité de sources d’énergie est connectée à l’électrode. La phase du courant VHF délivré par les sources d’énergie peut être modulée afin de déplacer l’onde stationnaire qui est perpendiculaire aux ferrites dans une direction parallèle aux ferrites. Par conséquent, le courant VHF sur la zone non couverte de l’électrode sera une onde plane quasi-uniforme (dans une direction perpendiculaire aux ferrites) se propageant dans la direction parallèle aux ferrites.
PCT/US2009/061161 2008-10-24 2009-10-19 Électrode et modèle de couplage de puissance pour un processus uniforme dans une chambre de pecvd à grande surface WO2010048084A2 (fr)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
US10836508P 2008-10-24 2008-10-24
US10839308P 2008-10-24 2008-10-24
US61/108,365 2008-10-24
US61/108,393 2008-10-24
US12/493,866 US20100104772A1 (en) 2008-10-24 2009-06-29 Electrode and power coupling scheme for uniform process in a large-area pecvd chamber
US12/493,721 2009-06-29
US12/493,866 2009-06-29
US12/493,721 US20100104771A1 (en) 2008-10-24 2009-06-29 Electrode and power coupling scheme for uniform process in a large-area pecvd chamber

Publications (2)

Publication Number Publication Date
WO2010048084A2 true WO2010048084A2 (fr) 2010-04-29
WO2010048084A3 WO2010048084A3 (fr) 2010-07-29

Family

ID=42119916

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2009/061161 WO2010048084A2 (fr) 2008-10-24 2009-10-19 Électrode et modèle de couplage de puissance pour un processus uniforme dans une chambre de pecvd à grande surface

Country Status (2)

Country Link
TW (1) TW201024455A (fr)
WO (1) WO2010048084A2 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI596644B (zh) * 2012-03-22 2017-08-21 藍姆研究公司 流體分配元件組件及電漿處理設備
TWI466163B (zh) * 2012-10-30 2014-12-21 Zavtrod 空心陰極放電蝕刻裝置及其方法
CN108257841B (zh) * 2016-12-29 2020-10-23 中微半导体设备(上海)股份有限公司 一种具有多区可调磁环的等离子处理装置及其处理方法
US11499231B2 (en) 2020-04-09 2022-11-15 Applied Materials, Inc. Lid stack for high frequency processing

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6204607B1 (en) * 1998-05-28 2001-03-20 Applied Komatsu Technology, Inc. Plasma source with multiple magnetic flux sources each having a ferromagnetic core
KR20050001842A (ko) * 2003-06-26 2005-01-07 삼성전자주식회사 플라즈마 챔버
US20050061445A1 (en) * 1999-05-06 2005-03-24 Tokyo Electron Limited Plasma processing apparatus

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6204607B1 (en) * 1998-05-28 2001-03-20 Applied Komatsu Technology, Inc. Plasma source with multiple magnetic flux sources each having a ferromagnetic core
US20050061445A1 (en) * 1999-05-06 2005-03-24 Tokyo Electron Limited Plasma processing apparatus
KR20050001842A (ko) * 2003-06-26 2005-01-07 삼성전자주식회사 플라즈마 챔버

Also Published As

Publication number Publication date
TW201024455A (en) 2010-07-01
WO2010048084A3 (fr) 2010-07-29

Similar Documents

Publication Publication Date Title
US20100104771A1 (en) Electrode and power coupling scheme for uniform process in a large-area pecvd chamber
US7342361B2 (en) Plasma source
US7994724B2 (en) Inductive plasma applicator
IES20050301A2 (en) Plasma source
KR101463934B1 (ko) 혼합형 플라즈마 반응기
US20100104772A1 (en) Electrode and power coupling scheme for uniform process in a large-area pecvd chamber
KR101274515B1 (ko) 플라즈마 처리장치
US11515122B2 (en) System and methods for VHF plasma processing
WO2010048084A2 (fr) Électrode et modèle de couplage de puissance pour un processus uniforme dans une chambre de pecvd à grande surface
KR100719804B1 (ko) 다중 안테나 구조
JPH1027782A (ja) プラズマ処理方法及び装置
KR101572100B1 (ko) 복합 주파수를 이용한 대면적 플라즈마 반응기
KR101585893B1 (ko) 복합형 플라즈마 반응기
KR100552524B1 (ko) 박막형성장치
KR20070097232A (ko) 반도체 기판 공정 챔버에 사용되는 다중 플라즈마 발생소스
KR20110131834A (ko) 선형 플라즈마 발생기 및 이를 이용한 플라즈마 처리 시스템
KR101112745B1 (ko) 가변형 용량 결합 전극을 구비한 플라즈마 반응기
JP4057541B2 (ja) プラズマ発生システム
KR101585891B1 (ko) 혼합형 플라즈마 반응기
KR100785404B1 (ko) 유도 결합형 플라즈마 안테나 및 이를 이용한 기판 처리장치와 방법
KR101297267B1 (ko) 플라즈마 처리 장치
KR101585890B1 (ko) 수직 듀얼 챔버로 구성된 대면적 플라즈마 반응기
KR101609319B1 (ko) 복합형 플라즈마 반응기
KR101969077B1 (ko) 플라즈마 안테나 및 이를 이용한 기판 처리 장치
KR100883561B1 (ko) 자속 채널에 결합된 기판 처리 챔버를 구비한 플라즈마반응기

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 09822502

Country of ref document: EP

Kind code of ref document: A2

NENP Non-entry into the national phase in:

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 09822502

Country of ref document: EP

Kind code of ref document: A2