WO2010045639A1 - Method and apparatus for reacting thin films on low-temperature substrates at high speeds - Google Patents
Method and apparatus for reacting thin films on low-temperature substrates at high speeds Download PDFInfo
- Publication number
- WO2010045639A1 WO2010045639A1 PCT/US2009/061172 US2009061172W WO2010045639A1 WO 2010045639 A1 WO2010045639 A1 WO 2010045639A1 US 2009061172 W US2009061172 W US 2009061172W WO 2010045639 A1 WO2010045639 A1 WO 2010045639A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- thin film
- low
- gaseous atmosphere
- temperature substrate
- metal
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 49
- 239000010409 thin film Substances 0.000 title claims abstract description 42
- 238000000034 method Methods 0.000 title claims abstract description 22
- 229910052751 metal Inorganic materials 0.000 claims abstract description 18
- 239000002184 metal Substances 0.000 claims abstract description 18
- 239000007789 gas Substances 0.000 claims abstract description 11
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000001257 hydrogen Substances 0.000 claims abstract description 7
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 7
- 229920000642 polymer Polymers 0.000 claims abstract description 4
- 229910052724 xenon Inorganic materials 0.000 claims description 12
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 12
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 8
- 239000005751 Copper oxide Substances 0.000 claims description 7
- 229910000431 copper oxide Inorganic materials 0.000 claims description 7
- 229930195733 hydrocarbon Natural products 0.000 claims description 4
- 150000002430 hydrocarbons Chemical class 0.000 claims description 4
- 239000004215 Carbon black (E152) Substances 0.000 claims description 3
- 230000001360 synchronised effect Effects 0.000 claims description 3
- MUMZUERVLWJKNR-UHFFFAOYSA-N oxoplatinum Chemical compound [Pt]=O MUMZUERVLWJKNR-UHFFFAOYSA-N 0.000 claims description 2
- 150000002736 metal compounds Chemical class 0.000 claims 5
- 229910003445 palladium oxide Inorganic materials 0.000 claims 1
- JQPTYAILLJKUCY-UHFFFAOYSA-N palladium(ii) oxide Chemical compound [O-2].[Pd+2] JQPTYAILLJKUCY-UHFFFAOYSA-N 0.000 claims 1
- 229910003446 platinum oxide Inorganic materials 0.000 claims 1
- 229910044991 metal oxide Inorganic materials 0.000 abstract description 14
- 150000004706 metal oxides Chemical class 0.000 abstract description 14
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 abstract description 4
- 238000001723 curing Methods 0.000 description 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 14
- 229910052802 copper Inorganic materials 0.000 description 14
- 239000010949 copper Substances 0.000 description 14
- 239000002245 particle Substances 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 239000010408 film Substances 0.000 description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000000976 ink Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 150000004770 chalcogenides Chemical class 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 239000002923 metal particle Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- KZNMRPQBBZBTSW-UHFFFAOYSA-N [Au]=O Chemical compound [Au]=O KZNMRPQBBZBTSW-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 239000003610 charcoal Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- -1 copper oxide Chemical class 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910001922 gold oxide Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 238000007648 laser printing Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000008450 motivation Effects 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- HBEQXAKJSGXAIQ-UHFFFAOYSA-N oxopalladium Chemical compound [Pd]=O HBEQXAKJSGXAIQ-UHFFFAOYSA-N 0.000 description 1
- 238000007649 pad printing Methods 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 150000004771 selenides Chemical class 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000011232 storage material Substances 0.000 description 1
- 150000004763 sulfides Chemical class 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 150000004772 tellurides Chemical class 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/105—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by conversion of non-conductive material on or in the support into conductive material, e.g. by using an energy beam
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1655—Process features
- C23C18/1658—Process features with two steps starting with metal deposition followed by addition of reducing agent
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1655—Process features
- C23C18/1664—Process features with additional means during the plating process
- C23C18/1667—Radiant energy, e.g. laser
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0393—Flexible materials
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/08—Treatments involving gases
- H05K2203/087—Using a reactive gas
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
- H05K2203/1157—Using means for chemical reduction
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/12—Using specific substances
- H05K2203/125—Inorganic compounds, e.g. silver salt
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/15—Position of the PCB during processing
- H05K2203/1545—Continuous processing, i.e. involving rolls moving a band-like or solid carrier along a continuous production path
Definitions
- the present invention relates to curing methods in general, and, in particular, to a method and apparatus for reacting thin films on low-temperature substrates at high speeds.
- One approach to making electrical conductors on circuits is to print metal- containing ink onto a substrate, and to then heat the substrate for sintering the particles in the metal-containing ink to form a conducting path.
- metals suitable for electrical conduction need to be heated to a very high temperature, which is often in the range of a couple hundred degrees centigrade of their melting point.
- silver is a good metal for making conductive traces because it can be heated in air and that its oxides, which are comparatively low in conductivity, decompose at relatively low temperatures.
- the fact that silver being the most electrically conductive metal often outweighs its high cost when comes to choosing a metal for making conductive traces.
- Copper Another metal that is being constantly pursued in the manufacturing of conductive traces is copper because of its low cost. Copper has about 90% of the conductivity of silver but is usually 50 to 100 times cheaper than silver on a mass basis. However, silver inks still dominate the printed electronics market because the additional cost of making and processing the copper inks to avoid oxidation is generally higher than the difference in cost of the bulk materials. Basically, when copper particles are heated in air, they oxidize before they sinter, which results in a non-conductor.
- a gaseous atmosphere is initially provided.
- a layer of thin film located on top of a low- temperature substrate is then transported through the gaseous atmosphere.
- the layer of thin film is exposed to multiple pulsed electromagnetic emissions to allow the layer of thin film to be chemically reacted with the gaseous atmosphere.
- Figure 1 is a diagram of a curing apparatus, in accordance with a preferred embodiment of the present invention.
- Figure 2 is a high-level logic flow diagram of a method for reacting thin films on a low-temperature substrate, in accordance with a preferred embodiment of the present invention.
- metal oxides can be reduced by hydrogen or hydrocarbons at an elevated temperature if they have a positive reduction potential.
- examples include oxides of copper, gold, platinum, and palladium.
- Copper can be made by mixing copper oxide bearing ore with charcoal via a heating process. When oxidized copper particles or even pure copper oxide is heated in a reducing atmosphere, the particles can sinter to form a conductor.
- a very conductive trace can be formed if the particles are heated to their sintering temperature in an inert or reducing atmosphere. Since the melting point of copper is nearly 1,085 0 C, the temperature required for sintering demands that only high-temperature substrates, such as glass or ceramic, can be utilized. This relatively high temperature requirement on substrates prevents the usage of inexpensive substrates such as paper or plastic.
- the copper oxide can be heated to near the substrate's decomposition temperature and the low- temperature substrate can be placed in a reducing atmosphere.
- the low temperature dramatically increases the amount of time needed to minutes or even hours depending on the substrate thickness.
- sintering is very limited.
- the substrate temperature and gas atmosphere requirements can be overcome if an intense, short pulse of light is utilized to cure the substrate.
- Reducible metal oxide can be placed between two electrical contacts in a hydrogen atmosphere, and electrical current can be repetitively pulsed through the oxide to heat the oxide and to reduce the oxide.
- this technique requires electrical contacts and its throughput is relatively limited.
- curing is defined as thermal processing, which includes reacting a thin film with a gaseous atmosphere.
- Thin film is defined as a coating less than 100 microns thick.
- a low-temperature substrate can be made of paper, plastic or polymer.
- An electromagnetic emission may include electromagnetic radiation comprising gamma rays, x-rays, ultraviolet, visible light, infrared, millimeter waves, microwaves, or radio waves.
- Electromagnetic emission sources include lasers, induction heaters, microwave generators, flashlamps, light emitting diodes, etc.
- a curing apparatus 100 includes a conveyor belt system 110, a strobe head 120, a relay rack 130 and a reel-to-reel feeding system 140.
- Curing apparatus 100 is capable of curing a thin film 102 mounted on a low-temperature substrate 103 situated on a web being moved across a conveyor belt at a relative high speed.
- Conveyer belt system 110 can operate at speeds from 0 to 1,000 ft/min, for example, to move substrate 103.
- Curing apparatus 100 can accommodate a web of any width in 6-inch increments.
- Thin film 102 can be added on substrate 103 by one or combinations of existing technologies such as screen printing, inkjet printing, gravure, laser printing, xerography, pad printing, painting, dip-pen, syringe, airbrush, flexographic, chemical vapor deposition (CVD), evaporation, sputtering, etc.
- existing technologies such as screen printing, inkjet printing, gravure, laser printing, xerography, pad printing, painting, dip-pen, syringe, airbrush, flexographic, chemical vapor deposition (CVD), evaporation, sputtering, etc.
- Strobe head 120 which is preferably water cooled, includes a high-intensity pulsed xenon flash lamp 121 for curing thin film 102 located on substrate 103.
- Pulsed xenon flash lamp 121 can provide pulses for different intensity, pulse length, and pulse repetition frequency.
- pulsed xenon flash lamp 121 can provide 10 microseconds to 50 milliseconds pulses with a 3" by 6" wide beam at a pulse repetition rate of up to 1 kHz.
- the spectral content of the emissions from the pulsed xenon flash lamp 121 ranges from 200 nm to 2,500 nm. The spectrum can be adjusted by replacing the quartz lamp with a cerium doped quartz lamp to remove most of the emission below 350 nm.
- the quartz lamp can also be replaced with a sapphire lamp to extend the emission from approximately 140 nm to approximately 4,500 nm. Filters may also be added to remove other portions of the spectrum.
- Flash lamp 121 can also be a water wall flash lamp that is sometimes referred to a Directed Plasma Arc (DPA) lamp.
- DPA Directed Plasma Arc
- Relay rack 130 includes an adjustable power supply 131, a conveyor control module 132, and a strobe control module 134.
- Adjustable power supply 131 can produce pulses with an energy of up to 4 kilojoules per pulse.
- Adjustable power supply 131 is connected to pulsed xenon flash lamp 121, and the intensity of the emission from pulsed xenon flash lamp 121 can be varied by controlling the amount of current passing through pulsed xenon flash lamp 121.
- Adjustable power supply 131 controls the emission intensity of pulsed xenon flash lamp 121.
- the power, pulse duration and pulse repetition frequency of the emission from pulsed xenon flash lamp 121 are electronically adjusted and synchronized to the web speed to allow optimum curing of thin film 102 without damaging substrate 103, depending on the optical, thermal and geometric properties of thin film 102 and substrate 103.
- Conveyor belt system 110 moves thin film 102 under strobe head 120 where thin film 102 is cured by rapid pulses from pulsed xenon flash lamp 121.
- the power, duration and repetition rate of the emissions from pulsed xenon flash lamp 121 are controlled by strobe control module 134, and the speed at which substrate 103 is being moved past strobe head 120 is determined by conveyor control module 132.
- a sensor 150 which can be a mechanical, electrical, or optical sensor, is utilized to sense the speed of conveyor belt system 110.
- the conveyor belt speed of conveyor belt system 110 can be sensed by detecting a signal from a shaft encoder connected to a wheel that made contact with the moving conveyor belt.
- the pulse repetition rate can be synchronized with the conveyor belt speed of conveyor belt system 110 accordingly.
- the synchronization of the strobe pulse rate / is given by:
- Overlap factor O is the average number of strobe pulses that are received by a substrate. For example, with a web speed of 200 ft/min, and overlap factor of 5, and a curing head width of 2.75 inches, the pulse rate of a strobe is 72.7 Hz.
- An enclosure 160 surrounds substrate 103 and contains a reducing atmosphere 161.
- a transparent window 162 passes light from flash lamp 121.
- flash lamp 121 When flash lamp 121 is pulsed, film 102 is momentarily heated and chemically reacts with atmosphere 161.
- a rapid pulse train is combined with moving substrate 103, a uniform cure can be attained over an arbitrarily large area as each section of thin film 102 is exposed to multiple pulses, which approximates a continuous curing system such as an oven.
- a gaseous atmosphere containing a reducing gas such as reducing atmosphere 161 from Figure 1
- the gaseous atmosphere contains hydrogen or a hydrocarbon such as methane, propane, etc.
- a layer of thin film located on top of a low-temperature substrate is move through the gaseous atmosphere, as depicted in block 222.
- the thin film preferably contains a reducible metal oxide such as copper oxide (CuO), gold oxide (Ag 2 O), platinum oxide (PtO) and palladium oxide (PdO), etc.
- a reducible metal oxide such as copper oxide (CuO), gold oxide (Ag 2 O), platinum oxide (PtO) and palladium oxide (PdO), etc.
- copper is desirable as a conductor for printed electronics.
- a printed copper film often contains copper oxide, which is a barrier to electronic conduction.
- the low-temperature substrate can be made of polymer or paper.
- Each segment (i.e., the curing head width) of the layer of thin film is then exposed to at least one pulse from a flash lamp, such as flash lamp 121 from Figure 1, while the layer of thin film is being transported through the gaseous atmosphere, as shown in block 223, to allow the layer of thin film to be chemically reacted with the gaseous atmosphere.
- a flash lamp such as flash lamp 121 from Figure 1
- the pulses from the strobe system reduce the thin film of metal oxide, such as copper oxide, on the low-temperature substrate to form a conductive metal film, such as copper film, in less than one second without damaging the low-temperature substrate.
- the speed at which the reaction progresses is diffusion limited.
- the diffusion rate is related to the temperature of the curing system.
- the temperature is limited by the decomposition temperature of the low-temperature substrate.
- the pulsed light heats the metal oxide to a very high temperature without decomposing the low-temperature substrate. This dramatically reduces the time to reduce the metal oxide.
- the present invention provides a method and apparatus for reacting thin films on low-temperature substrates.
- One advantage of the present invention is that a metal thin firm can be obtained even when pure metal oxide is initially deposited.
- One of the motivations to deposit metal oxide particles is that they are more readily available than their metal counterparts, particularly when they are in a nanoparticle form. It is particularly difficult to make very fine (tens of ran) metal particles while maintaining their purity.
- the very fine metal particles are usually coated with either an oxide and/or a capping group.
- metal oxide particles can be more easily dispersed, and can be more easily printed on a variety of substrates.
- Another advantage of the present invention is that it requires no registration. If the thin film is a printed pattern, only that pattern is reacted while the imprinted portions of the low-temperature substrate that generally are less absorptive of the light pulses are left cool.
- Nitridation with ammonia or amines for the formation of nitrides.
- the partial pressure of O 2 within the ammonia or amine gas stream for the formation of oxynitrides is a significant component of Nitridation.
- Chalcogenides are sulfides (S 2" ), selenides (Se 2" ), and tellurides (Te 2" ). This covers a large family of semiconductors (II - VI semiconductors), e.g., ZnS, ZnSe, CdS, CdSe, CdTe, etc.
- pnictides from various precursor gases. Pnictides are phosphides (P 3" ), arsenides (As 3" ), and antimonides (Sb 3" ). This also covers the synthesis of a large family of semiconductors (III - V class semiconductors), e.g., GaP, GaAs, InP, InAs, InSb, etc.
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Chemically Coating (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
- Manufacture And Refinement Of Metals (AREA)
- Conductive Materials (AREA)
- Manufacturing Of Electric Cables (AREA)
- Electrodes Of Semiconductors (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Life Sciences & Earth Sciences (AREA)
- Pest Control & Pesticides (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Thermal Sciences (AREA)
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
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CN2009801453843A CN102217429B (en) | 2008-10-17 | 2009-10-19 | Method and apparatus for reacting thin films on low-temperature substrates at high speeds |
JP2011532314A JP5401550B2 (en) | 2008-10-17 | 2009-10-19 | Method and apparatus for reacting thin film on low temperature substrate at high speed |
CA2740786A CA2740786C (en) | 2008-10-17 | 2009-10-19 | Method and apparatus for reacting thin films on low-temperature substrates at high speeds |
EP09821387.9A EP2347638B1 (en) | 2008-10-17 | 2009-10-19 | Method and apparatus for reacting thin films on low-temperature substrates at high speeds |
HK12102513.0A HK1162093A1 (en) | 2008-10-17 | 2012-03-13 | Method and apparatus for reacting thin films on low-temperature substrates at high speeds |
Applications Claiming Priority (2)
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US19653108P | 2008-10-17 | 2008-10-17 | |
US61/196,531 | 2008-10-17 |
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WO2010045639A1 true WO2010045639A1 (en) | 2010-04-22 |
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PCT/US2009/038289 WO2010044904A1 (en) | 2008-10-17 | 2009-03-25 | Method for reducing thin films on low temperature substrates |
PCT/US2009/061172 WO2010045639A1 (en) | 2008-10-17 | 2009-10-19 | Method and apparatus for reacting thin films on low-temperature substrates at high speeds |
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PCT/US2009/038289 WO2010044904A1 (en) | 2008-10-17 | 2009-03-25 | Method for reducing thin films on low temperature substrates |
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US (2) | US20110262657A1 (en) |
EP (2) | EP2347032B1 (en) |
JP (7) | JP5922929B2 (en) |
KR (3) | KR20150125016A (en) |
CN (4) | CN102245804A (en) |
CA (3) | CA2740618C (en) |
HK (1) | HK1162093A1 (en) |
WO (2) | WO2010044904A1 (en) |
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WO2013076999A1 (en) * | 2011-11-25 | 2013-05-30 | Showa Denko K.K. | Conductive pattern formation method |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040231141A1 (en) * | 2001-07-06 | 2004-11-25 | Masaru Nishinaka | Laminate and its producing method |
US20040234916A1 (en) * | 2003-05-21 | 2004-11-25 | Alexza Molecular Delivery Corporation | Optically ignited or electrically ignited self-contained heating unit and drug-supply unit employing same |
US20080020304A1 (en) | 2004-11-24 | 2008-01-24 | Schroder Kurt A | Electrical, Plating And Catalytic Uses Of Metal Nanomaterial Compositions |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3239373A (en) * | 1962-04-24 | 1966-03-08 | Louis S Hoodwin | Printed circuit process |
FR1427315A (en) * | 1964-02-24 | 1966-02-04 | Yawata Iron & Steel Co | Process for the formation of electrically insulating coatings on electric sheets |
US4159414A (en) * | 1978-04-25 | 1979-06-26 | Massachusetts Institute Of Technology | Method for forming electrically conductive paths |
FR2537898A1 (en) * | 1982-12-21 | 1984-06-22 | Univ Paris | METHOD FOR REDUCING METAL COMPOUNDS BY THE POLYOLS, AND METAL POWDERS OBTAINED BY THIS PROCESS |
US4592929A (en) * | 1984-02-01 | 1986-06-03 | Shipley Company Inc. | Process for metallizing plastics |
US4526807A (en) * | 1984-04-27 | 1985-07-02 | General Electric Company | Method for deposition of elemental metals and metalloids on substrates |
US4668533A (en) * | 1985-05-10 | 1987-05-26 | E. I. Du Pont De Nemours And Company | Ink jet printing of printed circuit boards |
JPH0537126A (en) * | 1991-07-30 | 1993-02-12 | Toshiba Corp | Wiring substrate and information memory medium using metallic oxide |
US6326130B1 (en) * | 1993-10-07 | 2001-12-04 | Mallinckrodt Baker, Inc. | Photoresist strippers containing reducing agents to reduce metal corrosion |
DE69506333T2 (en) * | 1994-07-11 | 1999-07-15 | Agfa-Gevaert N.V., Mortsel | Inkjet printing process |
US5938848A (en) * | 1996-06-27 | 1999-08-17 | Nordson Corporation | Method and control system for applying solder flux to a printed circuit |
JP4463473B2 (en) * | 2000-12-15 | 2010-05-19 | ジ・アリゾナ・ボード・オブ・リージェンツ | Metal patterning method using precursor-containing nanoparticles |
JP4416080B2 (en) * | 2003-01-29 | 2010-02-17 | 富士フイルム株式会社 | Printed wiring board forming ink, printed wiring board forming method, and printed wiring board |
US20040185388A1 (en) * | 2003-01-29 | 2004-09-23 | Hiroyuki Hirai | Printed circuit board, method for producing same, and ink therefor |
JP2004277627A (en) * | 2003-03-18 | 2004-10-07 | Asahi Kasei Corp | Ink for inkjet printing and method for forming metal-containing thin film by using the same |
JP2004277868A (en) * | 2003-03-19 | 2004-10-07 | Mitsubishi Paper Mills Ltd | Preparation method of conductive composition |
JP2005071805A (en) * | 2003-08-25 | 2005-03-17 | Fuji Photo Film Co Ltd | Composition containing particle of metal oxide and/or metal hydroxide, and metal particle; printed wiring board using it; its manufacturing method; and ink used for it |
US7547647B2 (en) * | 2004-07-06 | 2009-06-16 | Hewlett-Packard Development Company, L.P. | Method of making a structure |
WO2006072959A1 (en) * | 2005-01-10 | 2006-07-13 | Yissum Research Development Company Of The Hebrew University Of Jerusalem | Aqueous-based dispersions of metal nanoparticles |
WO2006076610A2 (en) * | 2005-01-14 | 2006-07-20 | Cabot Corporation | Controlling ink migration during the formation of printable electronic features |
US20060258136A1 (en) * | 2005-05-11 | 2006-11-16 | Guangjin Li | Method of forming a metal trace |
US20070193026A1 (en) | 2006-02-23 | 2007-08-23 | Chun Christine Dong | Electron attachment assisted formation of electrical conductors |
US8764960B2 (en) * | 2006-08-07 | 2014-07-01 | Inktec Co., Ltd. | Manufacturing methods for metal clad laminates |
US10231344B2 (en) * | 2007-05-18 | 2019-03-12 | Applied Nanotech Holdings, Inc. | Metallic ink |
-
2009
- 2009-03-25 CN CN2009801503274A patent/CN102245804A/en active Pending
- 2009-03-25 KR KR1020157030385A patent/KR20150125016A/en not_active Application Discontinuation
- 2009-03-25 JP JP2011532100A patent/JP5922929B2/en active Active
- 2009-03-25 WO PCT/US2009/038289 patent/WO2010044904A1/en active Application Filing
- 2009-03-25 EP EP09820923.2A patent/EP2347032B1/en active Active
- 2009-03-25 CN CN201510329127.2A patent/CN104894538A/en active Pending
- 2009-03-25 CA CA2740618A patent/CA2740618C/en active Active
- 2009-03-25 CA CA2910493A patent/CA2910493C/en active Active
- 2009-03-25 US US13/124,781 patent/US20110262657A1/en not_active Abandoned
- 2009-03-25 KR KR1020117011229A patent/KR101600559B1/en active IP Right Grant
- 2009-10-19 CA CA2740786A patent/CA2740786C/en active Active
- 2009-10-19 JP JP2011532314A patent/JP5401550B2/en not_active Expired - Fee Related
- 2009-10-19 CN CN2009801453843A patent/CN102217429B/en active Active
- 2009-10-19 CN CN201310495062.XA patent/CN103796425B/en active Active
- 2009-10-19 KR KR1020117011230A patent/KR101604437B1/en active IP Right Grant
- 2009-10-19 EP EP09821387.9A patent/EP2347638B1/en active Active
- 2009-10-19 US US12/581,606 patent/US20100098874A1/en not_active Abandoned
- 2009-10-19 WO PCT/US2009/061172 patent/WO2010045639A1/en active Application Filing
-
2012
- 2012-03-13 HK HK12102513.0A patent/HK1162093A1/en not_active IP Right Cessation
-
2013
- 2013-10-28 JP JP2013222959A patent/JP2014033227A/en active Pending
-
2014
- 2014-11-04 JP JP2014224144A patent/JP2015034352A/en not_active Withdrawn
-
2016
- 2016-08-09 JP JP2016156258A patent/JP6328702B2/en active Active
-
2018
- 2018-04-18 JP JP2018079858A patent/JP2018131691A/en active Pending
-
2019
- 2019-08-09 JP JP2019147583A patent/JP2019189947A/en not_active Withdrawn
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040231141A1 (en) * | 2001-07-06 | 2004-11-25 | Masaru Nishinaka | Laminate and its producing method |
US20040234916A1 (en) * | 2003-05-21 | 2004-11-25 | Alexza Molecular Delivery Corporation | Optically ignited or electrically ignited self-contained heating unit and drug-supply unit employing same |
US20080020304A1 (en) | 2004-11-24 | 2008-01-24 | Schroder Kurt A | Electrical, Plating And Catalytic Uses Of Metal Nanomaterial Compositions |
Non-Patent Citations (1)
Title |
---|
See also references of EP2347638A4 * |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2013077447A1 (en) * | 2011-11-24 | 2013-05-30 | 昭和電工株式会社 | Conductive-pattern formation method and composition for forming conductive pattern via light exposure or microwave heating |
WO2013077448A1 (en) * | 2011-11-24 | 2013-05-30 | 昭和電工株式会社 | Conductive-pattern formation method and composition for forming conductive pattern via light exposure or microwave heating |
JPWO2013077448A1 (en) * | 2011-11-24 | 2015-04-27 | 昭和電工株式会社 | Conductive pattern forming method and composition for forming conductive pattern by light irradiation or microwave heating |
US9318243B2 (en) | 2011-11-24 | 2016-04-19 | Showa Denko K.K. | Conductive-pattern forming method and composition for forming conductive pattern by photo irradiation or microwave heating |
WO2013076999A1 (en) * | 2011-11-25 | 2013-05-30 | Showa Denko K.K. | Conductive pattern formation method |
JP2014534605A (en) * | 2011-11-25 | 2014-12-18 | 昭和電工株式会社 | Conductive pattern forming method |
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