WO2010034274A1 - Dispositif émettant un rayonnement - Google Patents

Dispositif émettant un rayonnement Download PDF

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Publication number
WO2010034274A1
WO2010034274A1 PCT/DE2009/001116 DE2009001116W WO2010034274A1 WO 2010034274 A1 WO2010034274 A1 WO 2010034274A1 DE 2009001116 W DE2009001116 W DE 2009001116W WO 2010034274 A1 WO2010034274 A1 WO 2010034274A1
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WO
WIPO (PCT)
Prior art keywords
semiconductor chips
emitting device
radiation
longitudinal axis
radiation emitting
Prior art date
Application number
PCT/DE2009/001116
Other languages
German (de)
English (en)
Inventor
Siegfried Herrmann
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of WO2010034274A1 publication Critical patent/WO2010034274A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0756—Stacked arrangements of devices
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
    • F21V29/50—Cooling arrangements
    • F21V29/70—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
    • F21V29/85—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems characterised by the material
    • F21V29/89—Metals
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2103/00—Elongate light sources, e.g. fluorescent tubes
    • F21Y2103/10—Elongate light sources, e.g. fluorescent tubes comprising a linear array of point-like light-generating elements
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/648—Heat extraction or cooling elements the elements comprising fluids, e.g. heat-pipes

Definitions

  • a radiation emitting device is given.
  • An object to be solved is to provide a radiation-emitting device that can be used for general lighting purposes.
  • the latter comprises at least two optoelectronic semiconductor chips.
  • the semiconductor chips are designed to at least partially electromagnetic radiation in the ultraviolet or in the visible
  • the semiconductor chips emit UV radiation or blue light, this radiation or this light is preferably at least partially converted into electromagnetic radiation having a greater wavelength by means of a conversion means.
  • Conversion means may be applied as a layer on at least a portion of the semiconductor chips.
  • a plurality of semiconductor chips in particular emitting in the blue, green and red spectral ranges, to be combined with one another in the radiation-emitting device and, as a result, white mixed light to be generated.
  • the semiconductor chips can be formed, for example, as thin-film chips, as described in the document WO 2005/081319 A1, the disclosure content of which is hereby incorporated by reference with respect to the semiconductor chip described there as well as the production method described therein.
  • At least two semiconductor chips are arranged one above the other in at least one stack.
  • the majority of the semiconductor chips for example, more than 80% or all
  • a stack comprises at least two optoelectronic semiconductor chips.
  • the stack has a longitudinal axis.
  • the longitudinal axis cuts all semiconductor chips.
  • the longitudinal axis is in the direction of the major axis of the radiation emitting device having the largest dimension or in the direction of an axis of symmetry of the device.
  • the longitudinal axis can be a fictitious line.
  • the longitudinal axis is not a straight line. That is, the longitudinal axis may be in the form of a curved and / or convoluted line.
  • the longitudinal axis, and thus the stack is U-shaped or spiral-shaped, approximately similar to a curved rod or tube.
  • the longitudinal axis has at least one radius of curvature, wherein the radius of curvature is at least half of a diameter of the semiconductor chips in a direction perpendicular to the longitudinal axis.
  • the at least one radius of curvature is greater than the diameter of the semiconductor chips.
  • the Radius of curvature at least 1 mm, in particular at least 10 mm.
  • a main emission of the device occurs laterally with respect to the longitudinal axis of the stack.
  • an angle-dependent intensity distribution in a direction perpendicular to the longitudinal axis of the stack has a maximum.
  • the radiation emitted by the device may have an intensity distribution which is the
  • Intensity distribution with respect to the radiation angle of a Hertzian dipole or a dipole radiator is similar or equivalent.
  • no or negligible radiation is emitted in a direction parallel to the longitudinal axis. It is possible that all of the radiation emitted by the device is emitted via emitting surfaces, wherein the emitting surfaces have a normal vector which is oriented within manufacturing tolerances perpendicular to the longitudinal axis of the stack.
  • a distance between two adjacent semiconductor chips in the direction of the longitudinal axis is at least 1 mm.
  • the mutually facing main sides of the adjacent semiconductor chips are at least 1 mm apart.
  • the distance may also be at least 2 mm, in particular at least 3 mm.
  • the latter comprises at least two optoelectronic semiconductor chips, wherein the semiconductor chips are arranged one above the other in a stack.
  • a Main radiation of the device takes place laterally with respect to a longitudinal axis of the stack.
  • a distance between two adjacent semiconductor chips in the direction of the longitudinal axis is at least 1 mm.
  • Such a radiation-emitting device may be designed in shape as a fluorescent tube or as an energy-saving lamp and is used for general lighting purposes.
  • neighboring semiconductor chips arranged along the longitudinal axis do not touch each other.
  • each semiconductor chip of the stack has, along the longitudinal axis, each
  • a distance between two adjacent semiconductor chips along the longitudinal axis is at most 100 mm, in particular at most 10 mm.
  • At least one electrical contact point is located between two adjacent semiconductor chips, via which the adjacent semiconductor chips are electrically connected to one another.
  • the contact point is located on the main side of the semiconductor chip.
  • the contact point occupies, compared to the entire main surface of the semiconductor chip, preferably only a small area, for example less than 20% or less than 5%.
  • the contact point can be designed as a solder contact.
  • surface-shaped or finger-like contact structures may be located over the main surface of the semiconductor chip to improve and homogenize the power supply.
  • Contact structures may be made of or consist of an electrically conductive transparent oxide, TCO for short. Finger-like contact structures can be produced with a metal, for example via vapor deposition.
  • the contact points or the structures for electrical contacting of the semiconductor chips, for example, are not framed.
  • the contact points form a simply contiguous area such that the contact points do not completely surround or enclose any area that is not covered by a material of the contact points.
  • the contact points have, for example, a round or circular floor plan. That is, a projection of the contact points on a plane parallel to the main surfaces of the semiconductor chips has a round or circular shape.
  • the contact points of two adjacent semiconductor chips are contacted with one another via at least one, in particular via exactly one electrical connection.
  • the electrical connection may comprise a metallic wire or be designed as a conductor track.
  • the semiconductor chips of the stack are electrically connected in series via the electrical connection. It is possible that the electrical connection also serves for the mechanical connection and / or attachment of the semiconductor chips.
  • the semiconductor chips are designed as substrateless thin-film chips. Such semiconductor chips are described in the publication DE 10 2007 004 304 A1, the disclosure content of which is hereby incorporated by reference with regard to the semiconductor chips described there and the production method described therein.
  • a thickness of the semiconductor chips in a direction perpendicular to the main surface is preferably less than 20 ⁇ m, in particular less than 10 ⁇ m.
  • Semiconductor chips preferably have no growth substrate and no carrier substrate.
  • the semiconductor chips may consist of an epitaxially grown, self-supporting layer sequence, wherein the semiconductor chips may have applied on the layer sequence applied electrical contact structures whose thickness is preferably smaller than the thickness of the layer sequence.
  • the distance between two adjacent semiconductor chips is greater than a hundred times, in particular greater than five hundred times, the thickness of the semiconductor chips.
  • At least two, preferably all semiconductor chips are configured to emit the radiation on two mutually opposite main sides of the semiconductor chips.
  • the radiation generated in the semiconductor chip can leave it on its two main sides.
  • the semiconductor chips of the device thus have, in particular, no growth substrate which has a reflective or absorptive effect with respect to the radiation generated during operation of the semiconductor chip.
  • this is, at least partially, cylindrical-shaped.
  • the device thus has, for example, the shape of a round bar, a circular cylinder or a tubular shape.
  • the device may be designed in the shape of any mathematical cylinder having two mutually parallel, planar surfaces which are interconnected along their edges by mutually parallel straight lines.
  • this has a diameter of> 1 mm and ⁇ 20 mm.
  • diameter is meant the mean extent of the radiation-emitting device in a direction perpendicular to the longitudinal axis. If the device comprises at least one heat sink and / or at least one heat sink, then the device can have a diameter in the stated value range, at least without the heat sink or the heat sink.
  • the extent of the radiation-emitting device in a direction parallel to the longitudinal axis is ⁇ 5 mm, preferably ⁇ 50 mm, in particular ⁇ 300 mm.
  • the ratio of the length of the radiation-emitting device, along the longitudinal axis, and the diameter of the radiation-emitting device, in a direction perpendicular to the longitudinal axis is ⁇ 10, in particular ⁇ 50.
  • the main emission has a - _
  • the axis of symmetry is preferably formed by the longitudinal axis of the stack of semiconductor chips.
  • the radiation emitted by the device which is emitted in a certain direction, is within the scope of
  • the latter comprises at least five, in particular at least 15 semiconductor chips. As a result, a particularly bright emitting device can be realized.
  • At least two adjacent semiconductor chips are arranged congruently one above another in the direction of the longitudinal axis. That is to say, if a semiconductor chip is projected onto a plane perpendicular to the longitudinal axis, the projection of an adjacent semiconductor chip, for example, is congruent with the projection of the first-mentioned semiconductor chip within the manufacturing and measurement tolerances.
  • an optical waveguide material is located between at least two adjacent semiconductor chips in a direction along the longitudinal axis.
  • such an optical waveguide material is located between all, respectively adjacent semiconductor chips.
  • the optical fiber material is, for example, with a glass, a plastic or a " ⁇ -
  • the optical waveguide material is permeable with respect to the radiation emitted by the semiconductor chips.
  • the optical fiber material acts scattering for the radiation generated during operation of the device.
  • the optical waveguide material may contain admixtures which specifically influence the optical and / or mechanical and / or thermal and / or electrical properties of the optical waveguide material.
  • At least one semiconductor chip is embedded in the optical waveguide material. More than 80% of the semiconductor chips, in particular all semiconductor chips, are preferably embedded in the optical waveguide material. Embedded may mean that the semiconductor chips are completely surrounded and enclosed by the optical fiber material and the contact points.
  • the semiconductor chips are individually and / or electrically controllable in groups.
  • all semiconductor chips of a stack and / or all groups of semiconductor chips are electrically connected in parallel and can be supplied with current independently of each other.
  • the various stacks may be electrically connected in parallel to one another, in which case it is possible for all the semiconductor chips of a stack to be electrically connected in series.
  • all semiconductor chips of a stack or all semiconductor chips of the device that emit in a specific spectral range are one
  • the electrical connections are, at least partially, mounted on an outer surface of the optical waveguide material, in particular on the radiating surface.
  • the electrical connections are about as
  • Conductors designed, for example, are applied via a printing or vapor deposition on the optical fiber material.
  • At least two adjacent semiconductor chips are electrically connected to one another via a radiation-transmissive connection means which is conductive essentially only in the direction parallel to the longitudinal axis.
  • the connecting means has a plurality of thin channels parallel to the longitudinal axis, which are filled with an electrically conductive material. This plurality of channels with the electrically conductive material is in particular connected to the contact points of the adjacent semiconductor chips, whereby the electrical
  • the electrically conductive material in the channels can be designed with a metal, a matrix material of the substrate surrounding the channels, for example with a glass.
  • a connection means which may be shaped like a disk, has no or only a negligible transverse conductivity, ie an electrical conductivity in a direction perpendicular to the longitudinal axis. It is possible that the semiconductor chips are respectively applied to such a connecting means and a plurality of such connecting means with applied thereto
  • an angle between a normal vector of the main side of at least one of the semiconductor chips and the longitudinal axis is smaller than 3 °.
  • the semiconductor chips are oriented so that the normal vectors of the main sides of the semiconductor chips are oriented substantially parallel to the longitudinal axis of the stack of the semiconductor chips.
  • the main emission of the device then takes place substantially in a direction parallel to the main sides of the at least one semiconductor chip.
  • an angle between the normal vector of the main side is at least one
  • semiconductor chips and the longitudinal axis between 10 ° and 45 ° inclusive.
  • the semiconductor chips are tilted with respect to the longitudinal axis. It is also possible that adjacent semiconductor chips both tilted with respect to the longitudinal axis and against each other, for example
  • Such an arrangement of the semiconductor chips enables efficient main radiation in a direction perpendicular to the longitudinal axis and a homogeneous, rotationally symmetrical radiation of the device.
  • this is designed, at least in part, U-shaped.
  • at least two stacks of semiconductor chips, arranged parallel to one another with respect to their longitudinal axes, can be connected via, for example, a semiconductor chip
  • this is designed with a hollow cylinder whose axis of symmetry is oriented parallel to the longitudinal axis of the stack.
  • the hollow cylinder is at least one, preferably all semiconductor chips of the at least one stack or the device.
  • cooling of the semiconductor chips takes place at least partially via a gas and / or liquid convection.
  • the semiconductor chips are mounted in a hollow cylinder in which a gas and / or a liquid circulates or flows through a gas and / or a liquid.
  • the gas and / or the liquid are preferably permeable to the radiation generated by the device. If the cooling takes place via a liquid, the liquid preferably has one
  • Refractive index which lies between that of the semiconductor chips and that of the material of the hollow cylinder.
  • this comprises at least one
  • the heat sink is designed, for example, with a metal and is preferably in thermal contact with at least one semiconductor chip. It is possible that each semiconductor chip of the device is associated with exactly one heat sink. Preferably, the heat sink has a high thermal conductivity and a high heat capacity, so that heat generated in the operation of the semiconductor chips of the heat sink can be picked up and derived from the semiconductor chips.
  • Light conductor material each mounted at least one semiconductor chip.
  • At least one heat sink is located at each of the main surfaces of these semiconductor chips, which are remote from the optical waveguide material. Between heat sinks and semiconductor chips, there may be at least one coating which, for example, reflects radiation emitted by the semiconductor chips.
  • the end surfaces are, in particular, those surfaces of the optical waveguide material which are not intended to emit radiation. If the optical waveguide material is shaped, for example, as a circular cylinder, the bottom and top surfaces of the circular cylinder represent the end faces.
  • At least one of the heat sinks is designed in the form of a plug connection.
  • the device can be attached to an external connection device and / or electrically connected.
  • At least two semiconductor chips are arranged next to one another, ie laterally, in a direction perpendicular to the longitudinal axis. The juxtaposed
  • Semiconductor chips are, for example, in a plane perpendicular to the longitudinal axis. These semiconductor chips can be applied to a common carrier, such as a glass plate be.
  • the semiconductor chips arranged next to one another preferably emit in mutually different wavelength ranges.
  • the main surfaces of the semiconductor chips arranged side by side preferably point in the same direction, for example in the direction of the longitudinal axis. That is, the normal vectors of the major surfaces are then oriented parallel to the longitudinal axis.
  • three semiconductor chips are arranged next to one another in a plane perpendicular to the longitudinal axis.
  • One of these semiconductor chips preferably emits in the red, another semiconductor chip in the green and a third semiconductor chip in the blue spectral range.
  • a white light-emitting device can be achieved.
  • the semiconductor chips have a square, a rectangular, a hexagonal, a circular, a triangular or a diamond-shaped plan.
  • the semiconductor chips are arranged in a hollow cylinder which has a glass.
  • a hollow cylinder offers the semiconductor chips protection against external influences and has a high permeability with respect to the radiation generated by the device.
  • the semiconductor chips may be sealed airtight in the hollow cylinder, for example.
  • this comprises optical Scattering elements which are mounted between at least two adjacent semiconductor chips.
  • the optical scattering elements may be located in the optical waveguide material or added to such a material.
  • a heterogeneously constructed dielectric is located between at least two adjacent semiconductor chips.
  • Such a dielectric may comprise different materials with different refractive indices, so that the light generated by the semiconductor chips is deflected in a direction perpendicular to the longitudinal axis of the stack of semiconductor chips.
  • Such a heterogeneously constructed dielectric may have prismatic structures and / or scattering elements with facets.
  • the semiconductor chips consist of the epitaxial layer sequence and of the electrical contact structures whose thickness is smaller than the thickness of the layer sequence.
  • the semiconductor chips are mechanically interconnected via the optical fiber material, which is rod-shaped.
  • the semiconductor chips are electrically connected in series via the electrical connections, wherein the electrical connections between two adjacent
  • a radiation-emitting device may take the outer shape of a fluorescent tube or an energy-saving lamp.
  • a luminous means is provided which comprises at least one radiation-emitting device, for example as described in connection with one or more of the abovementioned embodiments.
  • this has an electrical control unit, so that the luminous means can be operated via, for example, 50 Hz or 60 Hz alternating current with a voltage of 115 V or 230 V.
  • the light source can have an Edison thread, so that the light source can be screwed into a socket for a light bulb, for example. It is also possible that the lighting means has plug connections. About such connectors, the bulb can be used in brackets, for example for
  • Fluorescent tubes are used.
  • the outer dimensions of the luminous means are preferably designed such that the luminous means can be used with the at least one radiation-emitting device instead of, for example, a fluorescent tube or an incandescent lamp.
  • Some application areas in which radiation-emitting devices and / or illuminants described here can be used are, for example, the backlighting of displays or display devices. Furthermore, the devices described here can be used in illumination devices for projection purposes, in headlights or light emitters and in general lighting.
  • FIG. 1 shows a schematic three-dimensional representation of an exemplary embodiment of a radiation-emitting device described here
  • FIG. 2 shows schematic plan views of exemplary embodiments of devices described here
  • FIGS 3 to 9 are schematic representations of further embodiments of here described
  • Figure 10 is a schematic representation of a
  • Figure 11 is a schematic side view of another
  • Embodiment of a radiation emitting device described herein Embodiment of a radiation emitting device described herein.
  • FIG. 1 shows an exemplary embodiment of a radiation-emitting device 1.
  • Substrateless thin-film semiconductor chips 2 are arranged in a stack 3.
  • the stack 3 has a longitudinal axis A along the
  • the semiconductor chips 2 each have two mutually opposite main sides 20 over which the radiation generated in the semiconductor chip 2 substantially leaves this.
  • a thickness T of the semiconductor chips 2 is approximately 6 ⁇ m.
  • the semiconductor chips 2 of the stack 3 are in one
  • the optical fiber material 5 has the shape of a cylindrical rod.
  • a radiating surface 9 forms an outer boundary surface of the optical waveguide material 5.
  • the radiating surface 9 in this case points away from the longitudinal axis A. End faces 12 of the
  • Optical fiber material 5 are aligned parallel to the main sides 20 of the semiconductor chips 2.
  • the radiation generated by the semiconductor chips 2 leaves the device 1 via the emission surface 9. No or only negligible radiation exits from the device 1 via the end faces 12.
  • the semiconductor chips 2 are arranged such that a normal vector N of the main surfaces 20 of the semiconductor chips 2 is oriented parallel to the longitudinal axis A.
  • a distance D between the mutually facing main surfaces 20 of adjacent semiconductor chips 2 is greater than 3 mm.
  • the ratio of the distance D between adjacent semiconductor chips 2 and the thickness T of the semiconductor chips 2 is thus greater than 500.
  • the semiconductor chips 2 lie congruently one above another with respect to the longitudinal axis A. In other words, projections of the semiconductor chips 2 lie on a plane perpendicular to the longitudinal axis A one above the other.
  • FIG. 2 shows various schematic plan views of radiation-emitting devices 1.
  • the longitudinal axis A of the devices 1 is oriented in Figure 2 each perpendicular to the plane and not drawn. _
  • the semiconductor chips 2 have a square outline.
  • the semiconductor chips 2 are surrounded by a rod-shaped optical waveguide material 5 or embedded in this.
  • Optical material 5 includes, for example, a glass or a plastic.
  • Optical fiber material 5 may have a coating, roughening or structuring, so that the efficiency with respect to the coupling-out of the radiation generated by the semiconductor chips 2 is increased out of the device 1.
  • the semiconductor chips 2 have a hexagonal outline, in accordance with FIG. 2C a round outline.
  • the semiconductor chips 2 of the stack 3 are arranged congruently with respect to the longitudinal axis A in each case within the framework of the manufacturing tolerances.
  • three semiconductor chips 2 a, 2 b, 2 c are arranged in a plane perpendicular to the longitudinal axis A.
  • the semiconductor chips 2a, 2b, 2c have a rhomboidal plan view. This makes it possible for the semiconductor chips 2a, 2b, 2c to be densely packed in the plane.
  • Each one of the semiconductor chips 2a, 2b, 2c emits in the red, green and blue spectral range, so that overall white mixed light can result.
  • adjacent planes of semiconductor chips 2a, 2b, 2c can be rotated relative to one another with respect to the longitudinal axis A, for example by 120 °.
  • the semiconductor chips 2 of the stack 3 are not arranged congruently, but are rotated relative to one another about the longitudinal axis not shown and laterally displaced.
  • the color impression of the radiation emitted by the device 1 can be adjusted in a wide range, for example only in certain regions of the device 1.
  • the semiconductor chips 2 are surrounded by the optical waveguide material 5, via which the semiconductor chips 2 of the stack 3 are mechanically rigidly connected to one another.
  • the light guide material 5 is shaped like a cylinder.
  • the optical waveguide material 5 is surrounded by a cladding 17, which has an elliptical floor plan.
  • the sheath 17 may be designed as a hollow body, so that in the sheath 17, the optical waveguide material 5 can be introduced with the stack 3 of the semiconductor chips 2 and between the optical waveguide material 5 and the sheath 17 is a cavity 21.
  • the envelope 17 By shaping the envelope 17 as an ellipse, the light guide material 5 can be placed in the envelope 17 in a defined manner with the stack 3; a type of guide rail is formed by the elliptical shape.
  • Optical fiber material 5 may optionally be a cooling medium 19.
  • the cooling medium 19 which includes a gas and / or a liquid, heat generated by the semiconductor chips 2 can be dissipated therefrom, at least in part, during operation of the device 1.
  • the cooling medium 19 is permeable with respect to the radiation generated by the device 1 during operation.
  • FIG. 3 illustrates the use of a radiation-emitting device 1, for example according to FIG. 1, in conjunction with a reflector 16, see schematic three-dimensional representation in FIG. 3A and schematic side view in FIG. 3B. About the reflector 16, the
  • a portion f of the stack 3 or of the light-conducting material 5 which is located inside the reflector 16 is approximately 50% of a diameter d of FIG
  • Fiber optic material 5 In order to achieve, for example, a stronger focusing of the radiation, the proportion f should be greater.
  • the device 1, as shown in Figure 4, has a hollow cylinder 7, which includes a glass or a plastic.
  • the semiconductor chips 2 of the stack 3 are mounted along the longitudinal axis A within the hollow cylinder 7.
  • the radiating surface 9 is formed by an outer surface of the hollow cylinder 7 facing away from the longitudinal axis A.
  • the cooling medium 19 may circulate in the form of a gas or a liquid in order to ensure a high heat dissipation away from the semiconductor chips 2 during operation of the device 1.
  • An adaptation of the optical refractive index between the semiconductor chip 2 and the hollow cylinder 7 can take place via the cooling medium 19. It is possible that the cooling medium 19 simultaneously forms the optical waveguide material 5.
  • FIG. 1 A schematic side view of a further embodiment of a radiation-emitting device 1 is shown in FIG.
  • the diameter d of Device 1 is approximately 1 mm
  • a length L of the device 1 along the longitudinal axis A is approximately 50 mm.
  • the thickness T of the semiconductor chips 2 is about 10 ⁇ m.
  • the main surfaces 20 of the semiconductor chips 2 are oriented perpendicular to the radiating surface 9.
  • the contact points 4 of adjacent semiconductor chips 2 are electrically conductively connected to one another via an electrical connection 11 and are thus connected in series electrically on the main sides 20 of the semiconductor chips 2.
  • the electrical connection 11 may be designed in the form of a wire, which is introduced in the optical waveguide material 5, for example via an injection or casting process.
  • the end faces 12a, 12b of the device 1 are parallel to the main sides 20 of the
  • the end face 12 a is formed by the optical waveguide material 5, the end face 12 b by the semiconductor chip 2.
  • the end faces 12a, 12b with a
  • the coating 13 is designed to be reflective of the radiation generated by the semiconductor chips 2 during operation of the device 1, so that no radiation leaves the device 1 via the end faces 12a, 12b.
  • the optical waveguide material 5 can have a scattering effect for the radiation generated by the semiconductor chips 2, so that a uniform emission of the main radiation over the entire radiating surface 9 is ensured.
  • the radiation emitted by the device 1 has an intensity maximum in a direction perpendicular to the longitudinal axis A.
  • the radiation characteristic of the device 1 is similar or in this case corresponds to that of a Hertzian dipole or a dipole radiator. If the semiconductor chips 2, as in accordance with FIG. 4, are located in a hollow cylinder 7, the electrical connections 11 can also serve for the mechanical connection or attachment of the semiconductor chips 2, in particular if the device 1 has no optical waveguide material 5 which embeds the semiconductor chips 2.
  • Fiber optic material 5 may be applied, for example in the form of thin interconnects that do not or not significantly affect the optical properties of the device 1.
  • the semiconductor chip 2 with the main side 20b is applied to a connecting means 6.
  • the connecting means 6 comprises a matrix material 22, which consists of glass or a plastic.
  • the electrical connections 11 are designed in the form of channels filled with a metal.
  • the connecting means 6 has a multiplicity of electrical connections 11 over the entire diameter d, so that a comparatively homogeneous energization of the semiconductor chip 2 over the main area 20b is possible.
  • the connection means 6 with the electrical connections 11 is electrically connected to the semiconductor chip 2 via the contact points 4, which may be shaped as a solder reservoir.
  • the electrical connections 11 are aligned parallel to the longitudinal axis A.
  • the connecting means 6 has an electrical conductivity only or predominantly in a direction parallel to the longitudinal axis A.
  • a Transverse conductivity of the connecting means 6, in a direction perpendicular to the longitudinal axis A, is negligible.
  • FIG. 6B shows a schematic side view of a further exemplary embodiment of a device 1 in which a plurality of connecting means 6 with semiconductor chips 2, as shown for example in FIG. 6A, are stacked on one another and thus forms the stack 3.
  • the electrical connections 11 are not shown in FIG. 6B.
  • the end face 12a is formed by the connecting means 6, the end face 12b of the semiconductor chip 2.
  • both end faces 12a, 12b are formed by the connecting means 6 or by the semiconductor chips 2 and also have a coating, for example according to FIG.
  • the connecting means 6 have a comparatively large thickness compared to the semiconductor chips 2. It is thus possible that a diameter d of the device 1 in the range of several millimeters can be realized.
  • the length L of the device 1 is adjustable and variable in an efficient manner by the number of connecting means 6 with semiconductor chips 2 stacked one above the other.
  • the main surfaces 20 of the semiconductor chips 2, as shown in FIG. 7, are provided with a roughening 14 in order to improve the light extraction efficiency out of the semiconductor chip 2.
  • Boundary surfaces of the semiconductor chips 2, whose normal vector is oriented perpendicular to the longitudinal axis A, are provided with a passivation 15.
  • the passivation 15 can have a reflective effect for the electromagnetic radiation generated by the semiconductor chips 2 or can be made permeable. - Zo -
  • each main side 20 of the semiconductor chips 2 two of the contact points 4 are applied, which for example have a circular outline. Via the contact points 4 and the electrical connections 11, the semiconductor chips 2 are electrically connected in series. Alternatively, the electrical connections 11 can also be guided via the emission surface 9 and the passivations 15, so that the semiconductor chips 2 can be electrically connected in parallel. In this way, for example, the color point of the radiation emitted by the device 1 during operation can be varied, in particular if the semiconductor chips 2 emit radiation of different wavelength ranges.
  • the optical waveguide material 5 is located between the semiconductor chips 2.
  • the diffusing elements 8 are added to the optical waveguide material 5, via which a light decoupling efficiency can be increased via the radiating surface 9.
  • the light guide material 5 is thus constructed heterogeneous.
  • the optical waveguide material 5 has different materials with different refractive indices.
  • a material having a lower refractive index than in regions that are farther away from the longitudinal axis A can be used.
  • a conversion agent, a filter medium or a means for increasing the thermal conductivity of the optical waveguide material 5 may be added to the optical waveguide material 5.
  • contact points 4 per main surface 20 of the semiconductor chip 2 can surface electrical Contact structures which are designed approximately with a transparent conductive oxide, in short a TCO, may be applied to the main sides 20.
  • TCO transparent conductive oxide
  • finger-shaped or radial, for example metallic current distribution structures are applied by the contact points 4.
  • the normal vector N of the main surface 20 of the semiconductor chips 2 encloses an angle ⁇ with the longitudinal axis A of the device 1.
  • the angle ⁇ is in the range between 10 ° and 45 ° inclusive, according to Figure 8 approximately 16 °.
  • the semiconductor chips 2 are arranged parallel to one another. By tilted relative to the longitudinal axis A arrangement of the semiconductor chips 2, the light extraction via the radiating surface 9 can be improved.
  • adjacent semiconductor chips 2 are rotated for example by 60 °, 90 ° or 120 ° about the longitudinal axis A against each other. As a result, a further homogenization of the radiation emitted by the device 1 is possible.
  • the device 1 according to FIG. 9 comprises two separately manufactured stacks 3 a, 3 b, which each have three semiconductor chips 2.
  • the end faces 12 of the stacks 3 a, 3 b are formed by the optical waveguide material 5.
  • the end faces 12 of the optical waveguide material 5 are surmounted by contact regions 40. Via the contact regions 40, the stacks 3a, 3b can be electrically connected in series. It is thus ensured via the contact areas 40 efficient contacting of individual or even multiple stacks 3a, 3b.
  • individual stacks 3a, 3b represents a module. Several modules can be combined with one another, similar to batteries. By using modular stacks 3a, 3b, it is possible without changes to the stacks 3 itself, for example, to adjust the electrical power consumption and thus the brightness of the device 1. According to FIG. 9, the individual stacks 3a, 3b are introduced into a hollow cylinder 7, which is formed from a glass.
  • End faces 12 of the stack 3 a, 3 b may be formed by the semiconductor chips 2.
  • the contact regions 40 can also be designed flat and cover a proportion of, for example, more than 20% of the end face.
  • FIG. 10 illustrates an exemplary embodiment of a luminous means 10.
  • the lighting means 10 has two devices Ia, Ib, each comprising two stacks 3.
  • the individual radiation emitting devices Ia, Ib are formed in a U-shape.
  • a stack 3 of a device Ia, Ib is located in a long leg of a U.
  • the devices Ia, Ib are surrounded by a sheath 17, which consists of a radiation emitted by the devices 1 radiation diffusing glass and which may be coated with a conversion agent.
  • the devices Ia, Ib are attached to a base 18.
  • the base 18 is an electrical control of the stack 3 and the devices Ia, Ib.
  • the base 18 is designed as a plug connection.
  • the base 18 may include an electrical circuit that is suitable for the lighting means 10 with a mains voltage of 115 V or 230 V 50 Hz alternating current to operate.
  • the base 18 can be provided with an Edison thread, similar to incandescent lamps.
  • the luminous means 10 may correspond to the external appearance of an energy-saving lamp, an incandescent lamp or a fluorescent tube and have a base 18 which has suitably designed plug-in or screw connections for electrical contacting and mechanical fastening of the luminous means.
  • the two semiconductor chips 2 are attached to the end faces 12 of the optical waveguide material 5.
  • the optical waveguide material 5 is in this case transparent and shaped like a cylinder.
  • On the main surfaces 20 of the semiconductor chips 2 facing away from the optical waveguide material 5 are the coatings 13, which have a reflective effect with respect to the radiation emitted by the semiconductor chips 2.
  • Two heat sinks 21 are furthermore located on the sides of the coatings 13 facing away from the semiconductor chips 2.
  • the heat sinks 21 can both serve for cooling and electrical contacting of the semiconductor chips 2, and also constitute a plug-in connection, by means of which the device 1 is connected to the device 1, not to the device 1 belonging and not shown in Figure 11 connections can be attached.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Optics & Photonics (AREA)
  • Led Device Packages (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)

Abstract

L'invention concerne un dispositif émettant un rayonnement. Dans au moins une forme de réalisation du dispositif émettant un rayonnement (1), celui-ci comprend au moins deux puces semi-conductrices optoélectroniques (2), les puces semi-conductrices (2) étant superposées en un empilement (3). Un rayonnement principal du dispositif (1) a lieu latéralement par rapport à un axe longitudinal (A) de l'empilement (3). Une distance (D) entre deux puces semi-conductrices (2) dans le sens de l'axe longitudinal (A) est d'au moins 1 mm.
PCT/DE2009/001116 2008-09-24 2009-08-06 Dispositif émettant un rayonnement WO2010034274A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102008048650.7 2008-09-24
DE102008048650A DE102008048650A1 (de) 2008-09-24 2008-09-24 Strahlung emittierende Vorrichtung

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WO2010034274A1 true WO2010034274A1 (fr) 2010-04-01

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Families Citing this family (2)

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Publication number Priority date Publication date Assignee Title
DE102009015016A1 (de) * 2009-03-26 2010-09-30 Robert Bosch Gmbh Sensoreinrichtung und Primärteil eines Elektromotors
DE102010046790A1 (de) * 2010-09-28 2012-03-29 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement und Verfahren zu dessen Herstellung

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Publication number Priority date Publication date Assignee Title
WO2002061328A1 (fr) * 2001-01-31 2002-08-08 Ilight Technologies, Inc. Dispositif d'eclairage pour simulation d'eclairage au neon
US20030102810A1 (en) * 2001-11-30 2003-06-05 Mule Lighting, Inc. Retrofit light emitting diode tube
WO2004097291A1 (fr) * 2003-05-01 2004-11-11 Allan Krogh Jensen Source lumineuse del tubulaire
US20050180135A1 (en) * 2004-02-18 2005-08-18 Gelcore Llc Lighting apparatus for creating a substantially homogenous lit appearance
JP2006293125A (ja) * 2005-04-13 2006-10-26 Seiko Epson Corp 照明装置及びプロジェクタ
EP1727202A2 (fr) * 2005-05-27 2006-11-29 Noctron Holding S.A. Système de diodes électroluminescentes

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US8835937B2 (en) 2004-02-20 2014-09-16 Osram Opto Semiconductors Gmbh Optoelectronic component, device comprising a plurality of optoelectronic components, and method for the production of an optoelectronic component
DE102007004304A1 (de) 2007-01-29 2008-07-31 Osram Opto Semiconductors Gmbh Dünnfilm-Leuchtdioden-Chip und Verfahren zur Herstellung eines Dünnfilm-Leuchtdioden-Chips

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Publication number Priority date Publication date Assignee Title
WO2002061328A1 (fr) * 2001-01-31 2002-08-08 Ilight Technologies, Inc. Dispositif d'eclairage pour simulation d'eclairage au neon
US20030102810A1 (en) * 2001-11-30 2003-06-05 Mule Lighting, Inc. Retrofit light emitting diode tube
WO2004097291A1 (fr) * 2003-05-01 2004-11-11 Allan Krogh Jensen Source lumineuse del tubulaire
US20050180135A1 (en) * 2004-02-18 2005-08-18 Gelcore Llc Lighting apparatus for creating a substantially homogenous lit appearance
JP2006293125A (ja) * 2005-04-13 2006-10-26 Seiko Epson Corp 照明装置及びプロジェクタ
EP1727202A2 (fr) * 2005-05-27 2006-11-29 Noctron Holding S.A. Système de diodes électroluminescentes

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