WO2010015352A3 - Heat dissipation module having a semiconductor element and production method for such a heat dissipation module - Google Patents

Heat dissipation module having a semiconductor element and production method for such a heat dissipation module Download PDF

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Publication number
WO2010015352A3
WO2010015352A3 PCT/EP2009/005501 EP2009005501W WO2010015352A3 WO 2010015352 A3 WO2010015352 A3 WO 2010015352A3 EP 2009005501 W EP2009005501 W EP 2009005501W WO 2010015352 A3 WO2010015352 A3 WO 2010015352A3
Authority
WO
WIPO (PCT)
Prior art keywords
section
heat dissipation
semiconductor element
dissipation module
contact surface
Prior art date
Application number
PCT/EP2009/005501
Other languages
German (de)
French (fr)
Other versions
WO2010015352A2 (en
Inventor
Dirk Lorenzen
Matthias Schröder
Original Assignee
Jenoptik Laserdiode Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jenoptik Laserdiode Gmbh filed Critical Jenoptik Laserdiode Gmbh
Publication of WO2010015352A2 publication Critical patent/WO2010015352A2/en
Publication of WO2010015352A3 publication Critical patent/WO2010015352A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/02365—Fixing laser chips on mounts by clamping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4018—Lasers electrically in series

Abstract

The invention relates to a heat dissipation module having a semiconductor element (2) comprising a first side and an opposing second side (13, 12), to a first electrically conductive heat dissipating body (3) which has a first contact surface (6) with a first section (8) and an adjacent second section (9), to a second electrically conductive heat dissipation body (4) which has a second contact surface (7) that faces the first contact surface (6) and has a third section (10) and adjacent thereto a fourth section (11), the semiconductor element (2) being arranged between the two heat dissipating bodies (3, 4), the first side (13) being joined to the first section (8) and the second side (12) to the third section (10) such that the first side (12) of the semiconductor element (2) is contacted thermally and electrically with the first section (8) of the first contact surface (6) and the second side (12) of the semiconductor element (2) is contacted thermally and electrically with the third section (10) of the second contact surface (7), and the second section (9) being thermally, but not electrically connected to the fourth section (11) by an interposed electric insulating layer (16), characterized in that a current conduction element (5) is arranged between the electric insulating layer (16) and the fourth section (11) of the second contact surface (7), said element being in thermal contact with the insulating layer (16) and in thermal and electric contact with the fourth section (11), wherein the current conduction element (15) comprises an end section (17) extending at least beyond one of the two contact surfaces (6, 7).
PCT/EP2009/005501 2008-08-05 2009-07-29 Heat dissipation module having a semiconductor element and production method for such a heat dissipation module WO2010015352A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102008036439A DE102008036439A1 (en) 2008-08-05 2008-08-05 Heat dissipation module with a semiconductor element and manufacturing method for such a heat dissipation module
DE102008036439.8 2008-08-05

Publications (2)

Publication Number Publication Date
WO2010015352A2 WO2010015352A2 (en) 2010-02-11
WO2010015352A3 true WO2010015352A3 (en) 2010-08-26

Family

ID=41501148

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2009/005501 WO2010015352A2 (en) 2008-08-05 2009-07-29 Heat dissipation module having a semiconductor element and production method for such a heat dissipation module

Country Status (2)

Country Link
DE (1) DE102008036439A1 (en)
WO (1) WO2010015352A2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2827467C (en) * 2011-05-10 2014-09-09 Obzerv Technologies Inc. Low inductance laser diode bar mount
DE102012025494B4 (en) * 2012-12-21 2019-12-19 Jenoptik Optical Systems Gmbh Diode laser module and method for producing a diode laser module
DE102013102328A1 (en) * 2013-03-08 2014-09-11 Osram Opto Semiconductors Gmbh Semiconductor laser array
CN109219908B (en) * 2016-01-04 2021-10-01 汽车交通安全联合公司 Heater on radiator
DE102018121857B4 (en) 2018-09-07 2023-05-11 Jenoptik Optical Systems Gmbh Device for operating a light-emitting semiconductor component
RU2757055C1 (en) * 2021-04-06 2021-10-11 Федеральное государственное бюджетное учреждение науки Физический институт им. П.Н. Лебедева Российской академии наук (ФИАН) Two-dimensional array of laser diodes and method for its assembly

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5105429A (en) * 1990-07-06 1992-04-14 The United States Of America As Represented By The Department Of Energy Modular package for cooling a laser diode array
US5325384A (en) * 1992-01-09 1994-06-28 Crystallume Structure and method for mounting laser diode arrays
US20020181523A1 (en) * 2001-05-29 2002-12-05 Pinneo George G. Low cost high integrity diode laser array
EP1286441A2 (en) * 2001-08-21 2003-02-26 Fanuc Ltd. Two-dimensional laser diode array

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4627062A (en) * 1983-10-26 1986-12-02 Mcdonnell Douglas Corporation AC driven laser diode array, power supply, transformer, and method therefor
DE10004999A1 (en) * 2000-02-04 2001-09-27 Fraunhofer Ges Forschung Device for guiding light beam with rotation symmetrical beam profile, has transparent flat substrate that is flexible relative to surface normal with lateral input and output coupling regions
KR20030073208A (en) * 2002-03-09 2003-09-19 주식회사 엘지이아이 Semiconductor laser diode array packaged on heat sink
DE10361899B4 (en) * 2003-12-22 2008-10-30 Jenoptik Laserdiode Gmbh Expansion-matched heat-spreading multi-layer substrate
US20080056314A1 (en) * 2006-08-31 2008-03-06 Northrop Grumman Corporation High-power laser-diode package system

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5105429A (en) * 1990-07-06 1992-04-14 The United States Of America As Represented By The Department Of Energy Modular package for cooling a laser diode array
US5325384A (en) * 1992-01-09 1994-06-28 Crystallume Structure and method for mounting laser diode arrays
US20020181523A1 (en) * 2001-05-29 2002-12-05 Pinneo George G. Low cost high integrity diode laser array
EP1286441A2 (en) * 2001-08-21 2003-02-26 Fanuc Ltd. Two-dimensional laser diode array

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
LORENZEN D ET AL: "Passively cooled diode lasers in the CW power range of 120-200W", PROCEEDINGS OF THE SPIE,, vol. 6876, no. 68760Q, 1 February 2008 (2008-02-01), pages 68760Q - 1, XP002587145 *

Also Published As

Publication number Publication date
DE102008036439A1 (en) 2010-02-11
WO2010015352A2 (en) 2010-02-11

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