WO2010005167A3 - 비파괴 센서용 단일 박막의 제조방법 - Google Patents

비파괴 센서용 단일 박막의 제조방법 Download PDF

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Publication number
WO2010005167A3
WO2010005167A3 PCT/KR2009/002287 KR2009002287W WO2010005167A3 WO 2010005167 A3 WO2010005167 A3 WO 2010005167A3 KR 2009002287 W KR2009002287 W KR 2009002287W WO 2010005167 A3 WO2010005167 A3 WO 2010005167A3
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WO
WIPO (PCT)
Prior art keywords
thin film
manufacturing
pattern
plating
main
Prior art date
Application number
PCT/KR2009/002287
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English (en)
French (fr)
Other versions
WO2010005167A2 (ko
Inventor
김종호
나용배
이재훈
신동문
Original Assignee
(주)노바마그네틱스
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
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Application filed by (주)노바마그네틱스 filed Critical (주)노바마그네틱스
Publication of WO2010005167A2 publication Critical patent/WO2010005167A2/ko
Publication of WO2010005167A3 publication Critical patent/WO2010005167A3/ko

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
    • G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
    • G01R15/18—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using inductive devices, e.g. transformers
    • G01R15/183—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using inductive devices, e.g. transformers using transformers with a magnetic core
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R3/00—Apparatus or processes specially adapted for the manufacture or maintenance of measuring instruments, e.g. of probe tips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by physical means, e.g. sputtering, evaporation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
    • G11B5/3109—Details

Abstract

본 발명인 비파괴 센서용 단일 박막의 제조방법은 비파괴 박막 센서 단일막의 제조시 전기도금방법을 이용하여 웨이퍼 기판 내 메인패턴의 도금의 증착 두께가 불균일하게 되는 현상을 해결할 수 있고, 메인패턴 부분과 그 외의 더미패턴 부분에 대해서 일정한 간격을 유지하면서 메인패턴과 더미패턴을 동시에 증착시켜서 메인패턴의 박막 두께의 안정화와 균일도를 향상시킬 수 있어 웨이퍼의 전체의 수율을 개선시킬 수 있으며, 자성 소자의 제작시에 전기도금방법을 사용함으로써, 메인 물질 이외에도 다양한 첨가제를 사용할 수 있어 소자의 특성과 입자크기를 제어할 수 있고, 더미 패턴용 마스크를 제작하여 안정적인 제조 공정을 확보함으로써, 공정시간의 단축과 소모되는 자재를 절약할 수 있으며, 얼라이너용 마스크를 만들어서 도금이 되는 모양을 조절함은 물론 다양한 도금 두께를 적용하여 각각의 균일도를 확인한 후 실제의 제조 공정 기술을 적용할 수 있고, 더미패턴을 형성하는데 전기도금방법을 사용함으로써, 현재 진행되는 패턴의 도금 자체를 안정화시킬 수 있음은 물론 전체적인 수율이 상승하여 제조 단가를 낮출 수 있는 것이다.
PCT/KR2009/002287 2008-07-10 2009-04-30 비파괴 센서용 단일 박막의 제조방법 WO2010005167A2 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2008-0066791 2008-07-10
KR1020080066791A KR20100006607A (ko) 2008-07-10 2008-07-10 비파괴 센서용 단일 박막의 제조방법

Publications (2)

Publication Number Publication Date
WO2010005167A2 WO2010005167A2 (ko) 2010-01-14
WO2010005167A3 true WO2010005167A3 (ko) 2010-03-04

Family

ID=41507530

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2009/002287 WO2010005167A2 (ko) 2008-07-10 2009-04-30 비파괴 센서용 단일 박막의 제조방법

Country Status (2)

Country Link
KR (1) KR20100006607A (ko)
WO (1) WO2010005167A2 (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101762657B1 (ko) 2011-01-31 2017-07-31 삼성전자주식회사 도전 패턴 구조물 및 이의 형성 방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010093678A (ko) * 2000-03-28 2001-10-29 니시무로 타이죠 와전류 손실 측정 센서, 막 두께 측정 장치, 막 두께 측정방법 및 기록 매체
KR20060009387A (ko) * 2003-06-13 2006-01-31 가부시키가이샤 에바라 세이사꾸쇼 측정장치
KR100584186B1 (ko) * 1999-12-22 2006-05-29 제너럴 일렉트릭 캄파니 에디 전류 프로브

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100584186B1 (ko) * 1999-12-22 2006-05-29 제너럴 일렉트릭 캄파니 에디 전류 프로브
KR20010093678A (ko) * 2000-03-28 2001-10-29 니시무로 타이죠 와전류 손실 측정 센서, 막 두께 측정 장치, 막 두께 측정방법 및 기록 매체
KR20060009387A (ko) * 2003-06-13 2006-01-31 가부시키가이샤 에바라 세이사꾸쇼 측정장치

Also Published As

Publication number Publication date
KR20100006607A (ko) 2010-01-21
WO2010005167A2 (ko) 2010-01-14

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