WO2009154130A1 - Method for manufacturing plasma display panel and film forming apparatus - Google Patents
Method for manufacturing plasma display panel and film forming apparatus Download PDFInfo
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- WO2009154130A1 WO2009154130A1 PCT/JP2009/060680 JP2009060680W WO2009154130A1 WO 2009154130 A1 WO2009154130 A1 WO 2009154130A1 JP 2009060680 W JP2009060680 W JP 2009060680W WO 2009154130 A1 WO2009154130 A1 WO 2009154130A1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/081—Oxides of aluminium, magnesium or beryllium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/20—Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
Abstract
Description
現在、PDPはガラス基板上に維持電極及び走査電極を形成した前面板と、ガラス基板上にアドレス電極を形成した背面板が貼り合わされている三電極面放電型が主流となっている。 Conventionally, a plasma display panel (PDP) has been widely used in the field of display devices, and recently, a high-quality and low-cost PDP with a large screen is required.
Currently, the PDP is mainly a three-electrode surface discharge type in which a front plate having a sustain electrode and a scan electrode formed on a glass substrate and a back plate having an address electrode formed on the glass substrate are bonded together.
一般に、維持電極及び走査電極上には、誘電体膜を形成し、さらにその上に誘電体の保護と二次電子を放出させることを目的としてMgO、SrO等の金属酸化膜が形成されている。 A discharge gas is enclosed between the front plate and the back plate. When a voltage is applied between the scan electrode and the address electrode to generate a discharge, the enclosed discharge gas is turned into plasma and ultraviolet rays are emitted. If the phosphor is arranged at a position where the emitted ultraviolet rays are irradiated, the phosphor is excited by the ultraviolet rays and visible light is emitted.
In general, a dielectric film is formed on the sustain electrode and the scan electrode, and a metal oxide film such as MgO or SrO is formed thereon for the purpose of protecting the dielectric and emitting secondary electrons. .
第43回PDP技術討論会予稿集、2006年7月5日、p32~p52
Proc. 43rd PDP Technical Discussion Meeting, July 5, 2006, p32-p52
(1)結晶配向性が(111)であり、XRD(X Ray Diffraction、X線回折)でのピーク強度が1500cps(counts per second)以上であること。
(2)充填率(膜密度)が82%以上であること(屈折率が約1.6以上であること)。 It is said that the protective film containing MgO is more likely to emit secondary electrons as the peak intensity of (111) orientation is higher, and that the higher the refractive index, the denser and the higher the sputtering resistance. In general, the following characteristics are required.
(1) The crystal orientation is (111), and the peak intensity in XRD (X Ray Diffraction, X-ray diffraction) is 1500 cps (counts per second) or more.
(2) The filling rate (film density) is 82% or more (the refractive index is about 1.6 or more).
つまり、上記の特性を向上させるための成膜条件は相反する。従って、現状より更に特性の優れたPDP用保護膜を作成する際には、何れかの特性を重視した成膜条件にするか、ないしは双方の特性の中間的な保護膜を作成せざるを得ない。 It is desirable that all of the above characteristics (1) and (2) are satisfied, the peak intensity is high, and the filling rate is high. However, the film density tends to decrease under the film forming conditions for improving the crystal orientation. Under the film forming conditions for increasing the film density, the crystal orientation tends to decrease.
That is, the film forming conditions for improving the above characteristics are contradictory. Therefore, when creating a protective film for PDP having more excellent characteristics than the current situation, it is necessary to make a film forming condition that emphasizes one of the characteristics, or to create an intermediate protective film having both characteristics. Absent.
電子ビームを照射する際に酸素又は水が存在すると、解離金属は酸素及び水と反応して再び金属酸化物となる(Mg+O2→2MgO、Mg+H2O→MgO+H2)。 If water is introduced when evaporating the metal oxide, water is decomposed by the electron beam and hydrogen as a reducing agent is generated. Therefore, the reduction reaction of the metal oxide (MgO + H 2 → Mg + H 2 O) is performed at a lower temperature. The amount of reduction increases even if the electron beam power is the same.
If oxygen or water is present when the electron beam is irradiated, the dissociated metal reacts with oxygen and water to become a metal oxide again (Mg + O 2 → 2MgO, Mg + H 2 O → MgO + H 2 ).
本発明者等が更に検討を行った結果、金属酸化物を解離させるためには、真空槽内に水を導入し、かつ、成膜速度が40nm/秒以上になるように、電子ビームを照射すればよいことが分かった。 Rather than forming a protective film with vapor of metal oxide that has evaporated without dissociating, the present inventors have mixed oxide into the protective film once the metal oxide has been dissociated and then oxidized. It has been found that the (111) crystal orientation of the protective film and the film density are higher when the film is formed.
As a result of further studies by the present inventors, in order to dissociate the metal oxide, water was introduced into the vacuum chamber and the electron beam was irradiated so that the film formation rate was 40 nm / second or more. I knew that I should do it.
本発明は、表面に電極が配置された第一のパネルを、真空槽内部の蒸発源と対面する成膜位置に配置し、前記真空槽内に酸素を導入しながら、前記蒸発源に配置された金属酸化物を加熱して、前記金属酸化物の蒸気を発生させ、前記第一のパネルの前記電極上に金属酸化物の薄膜からなる保護膜を形成した後、前記第一のパネルを第二のパネルとを貼り合せ、前記保護膜がプラズマに曝されるプラズマディスプレイパネルを製造するプラズマディスプレイパネルの製造方法であって、前記真空槽内に、単位時間当たりの導入体積が、前記酸素の単位時間当たりの導入体積と同じか、それよりも多くなるように、水を導入しながら、前記保護膜の成膜速度が40nm/秒以上になるように、前記金属酸化物を蒸発させるプラズマディスプレイパネルの製造方法である。
本発明はプラズマディスプレイパネルの製造方法であって、前記金属酸化物に電子線を照射して蒸発させるプラズマディスプレイパネルの製造方法である。
本発明はプラズマディスプレイパネルの製造方法であって、前記真空槽の全圧を、1×10-1Paを超える圧力にして、前記金属酸化物の蒸気を発生させるプラズマディスプレイパネルの製造方法である。
本発明はプラズマディスプレイパネルの製造方法であって、前記金属酸化物はMgOであるプラズマディスプレイパネルの製造方法である。
本発明はプラズマディスプレイパネルの製造方法であって、前記金属酸化物はMgOを含有し、SrOとCaOのいずれか一方又は両方が添加されたプラズマディスプレイパネルの製造方法である。
本発明はプラズマディスプレイパネルの製造方法であって、前記金属酸化物を蒸発させる際、前記真空槽内に放出される光の発光強度を測定し、前記発光強度の測定値が、予め設定された値になるように、前記金属酸化物を蒸発させる加熱装置の出力を変えるプラズマディスプレイパネルの製造方法である。
本発明はプラズマディスプレイパネルの製造方法であって、前記金属酸化物を蒸発させる際、前記真空槽内に放出される光の発光強度を測定し、前記発光強度の測定値が、予め設定された値になるように、前記電子線の照射面積を変えるプラズマディスプレイパネルの製造方法である。
本発明は、真空槽と、前記真空槽内に配置された蒸発源と、前記蒸発源に配置された蒸着材料を加熱する加熱装置と、前記真空槽内に水を導入する水導入口と、前記真空槽内に酸素を導入する酸素導入口とを有する保護膜の成膜装置であって、前記真空槽内部に発生する光の発光強度を測定する測定装置と、前記測定装置と前記加熱装置に接続された制御装置とを有し、前記制御装置は、前記測定装置から伝達される発光強度に基づき、前記加熱装置の出力を変更可能に構成された成膜装置である。
本発明は成膜装置であって、前記加熱装置は電子銃であり、前記制御装置は前記電子銃から放出される電子線の照射面積を変える成膜装置である。
本発明は成膜装置であって、前記真空槽内部の搬送経路に沿って成膜対象物を搬送する搬送装置を有し、前記成膜対象物は前記搬送経路を移動する間に前記蒸発源と対面するようにされ、前記水導入口は、前記酸素導入口よりも前記蒸発源に近く、かつ、前記搬送経路よりも遠い位置にある成膜装置である。
本発明は成膜装置であって、前記真空槽内部の前記蒸発源と対面する位置で基板を保持する基板ホルダを有し、前記水導入口は、前記酸素導入口よりも前記蒸発源に近く、かつ、前記基板ホルダに保持された前記基板に遠い位置にある成膜装置である。 The present invention based on such knowledge, while introducing oxygen into the vacuum chamber, heats the metal oxide disposed in the evaporation source to generate the vapor of the metal oxide, the electrode on the surface The arranged first panel was transported through a transport path in the vacuum chamber, passed through a film forming position facing the evaporation source, and a protective film made of a metal oxide thin film was formed on the electrode. Thereafter, the first panel is bonded to the second panel, and the plasma display panel is manufactured by manufacturing the plasma display panel in which the protective film is exposed to plasma. Of the protective film when the first panel is stationary at the deposition position while introducing water so that the introduction volume of oxygen is equal to or greater than the introduction volume of oxygen per unit time. Deposition rate is 40n / While evaporating the metal oxide so that the second or higher, a method of manufacturing a plasma display panel for carrying the said first panel.
According to the present invention, a first panel having an electrode disposed on a surface thereof is disposed at a film forming position facing an evaporation source inside a vacuum chamber, and oxygen is introduced into the vacuum chamber while being disposed at the evaporation source. The metal oxide is heated to generate a vapor of the metal oxide, and a protective film made of a thin film of metal oxide is formed on the electrode of the first panel. A plasma display panel manufacturing method for manufacturing a plasma display panel in which a protective panel is exposed to plasma, wherein the volume of introduction per unit time of the oxygen is A plasma display that evaporates the metal oxide while introducing water so that the deposition rate of the protective film is 40 nm / second or more while introducing water so as to be equal to or larger than the introduced volume per unit time. Pa It is a manufacturing method of Le.
The present invention relates to a method for manufacturing a plasma display panel, wherein the metal oxide is irradiated with an electron beam to evaporate.
The present invention is a method for manufacturing a plasma display panel, wherein the total pressure of the vacuum chamber is set to a pressure exceeding 1 × 10 −1 Pa to generate the vapor of the metal oxide. .
The present invention is a method for manufacturing a plasma display panel, wherein the metal oxide is MgO.
The present invention is a method for manufacturing a plasma display panel, wherein the metal oxide contains MgO, and one or both of SrO and CaO are added.
The present invention is a method for manufacturing a plasma display panel, wherein when the metal oxide is evaporated, the emission intensity of light emitted into the vacuum chamber is measured, and the measured value of the emission intensity is preset. This is a method for manufacturing a plasma display panel in which the output of the heating device for evaporating the metal oxide is changed so as to have a value.
The present invention is a method for manufacturing a plasma display panel, wherein when the metal oxide is evaporated, the emission intensity of light emitted into the vacuum chamber is measured, and the measured value of the emission intensity is preset. This is a method of manufacturing a plasma display panel in which the irradiation area of the electron beam is changed so as to have a value.
The present invention includes a vacuum chamber, an evaporation source disposed in the vacuum chamber, a heating device for heating a vapor deposition material disposed in the evaporation source, a water inlet for introducing water into the vacuum chamber, An apparatus for forming a protective film having an oxygen inlet for introducing oxygen into the vacuum chamber, the measuring device for measuring the emission intensity of light generated inside the vacuum chamber, the measuring device, and the heating device The control device is a film forming device configured to change the output of the heating device based on the emission intensity transmitted from the measurement device.
The present invention is a film forming apparatus, wherein the heating device is an electron gun, and the control device is a film forming apparatus that changes an irradiation area of an electron beam emitted from the electron gun.
The present invention is a film forming apparatus, and includes a transfer device that transfers a film formation target along a transfer path inside the vacuum chamber, and the evaporation source is moved while moving along the transfer path. The water introduction port is a film forming apparatus that is closer to the evaporation source than the oxygen introduction port and farther from the transfer path.
The present invention is a film forming apparatus, comprising a substrate holder that holds a substrate at a position facing the evaporation source inside the vacuum chamber, wherein the water introduction port is closer to the evaporation source than the oxygen introduction port In addition, the film forming apparatus is located far from the substrate held by the substrate holder.
水と酸素の導入量は、真空槽内の分圧で規定してもよいが、水は電子線で分解されるから、水の分圧を正確に測定することは困難である。従って、本発明では、分圧の代わりに、水と酸素の導入量を、単位時間当たりの導入体積(sccm)で規定する。 In order to reliably oxidize the dissociated metal, the amount of water introduced is the same as or larger than that of oxygen.
The amount of water and oxygen introduced may be defined by the partial pressure in the vacuum chamber, but since water is decomposed by an electron beam, it is difficult to accurately measure the partial pressure of water. Therefore, in the present invention, instead of the partial pressure, the introduction amount of water and oxygen is defined by the introduction volume (sccm) per unit time.
このプラズマディスプレイパネル1は、第一、第二のパネル10、20を有している。
第一のパネル10は第一のガラス基板11を有しており、第一のガラス基板11の表面には、維持電極15と走査電極16がそれぞれ配置されている(図1では1本ずつ図示)。
The
The
誘電体膜12の表面には保護膜14が全面にわたって配置されている。従って、各維持電極15上と各走査電極16上には保護膜14が位置する。 The sustain
A
選択した走査電極16とアドレス電極25の間に電圧を印加すると、それらの電極が交差する発光セルで書き込み放電(アドレス放電)が起こり、その発光セルに壁電荷が蓄積する。 Next, a process for lighting the
When a voltage is applied between the selected
保護膜14はMgOやSrO等、プラズマでエッチングされ難い材料で構成されている。しかも、本発明により成膜された保護膜14は、後述するように充填率が高いから、よりエッチングされ難く、誘電体膜12、維持電極15、走査電極16は保護膜14により保護され、プラズマディスプレイパネル1は従来に比べて寿命が長い。 The
The
図2の符号3は成膜装置の一例であり真空槽32を有している。真空槽32は成膜室34と材料室35とを有しており、材料室35は成膜室34の下方に配置され、成膜室34に接続されている。成膜室34には仕込室31と、取出室33がゲートバルブ39を介して接続されている。 Next, the film forming apparatus of the present invention used for manufacturing the
蒸発源36は坩堝(容器)を有しており、坩堝内には蒸着材料が配置される。ここでは蒸着材料は金属酸化物である。 The
The
制限板38の、蒸発源36の真上位置には開口(放出口)37が形成されており、放出口37を通った蒸気が成膜室34内に放出される。 A
An opening (discharge port) 37 is formed at a position of the
水導入口55と酸素導入口56は不図示のガス供給系に接続されており、水導入口55と酸素導入口56からは、H2Oガス(水蒸気、気体の水)と、酸素ガスとが材料室35内に導入される。 A
The
水導入口55は酸素導入口56よりも搬送経路51から遠い。即ち、成膜対象物が最も水導入口55に接近した時の、成膜対象物と水導入口55との間の距離は、成膜対象物が最も酸素導入口56に接近した時の、成膜対象物と酸素導入口56との間の距離よりも長い。 The
The
解離金属が酸化する時には光(紫外線)を放出する。材料室35の側壁には、その光を透過する窓部44(例えば石英窓)が設けられている。材料室35の外部には分光モニタ43が配置されている。窓部44を透過した光は、分光モニタ43の受光部に入射し、分光モニタ43は入射光の発光強度を測定する。 Therefore, the vapor exposed to the H 2 O gas is also exposed to oxygen gas before reaching the film formation target, and the dissociated metal is oxidized to become a metal oxide before reaching the film formation target.
When the dissociated metal oxidizes, it emits light (ultraviolet rays). On the side wall of the
先ず、予備試験により、実際に保護膜を成膜する時と同じ条件(金属酸化物の種類、成膜圧力、加熱温度、搬送速度等)で保護膜を成膜し、成膜位置で成膜対象物が静止した場合の単位時間当たりの膜厚成長量(静的成膜速度)と、金属酸化物が蒸発する時の特定波長の発光強度との関係を求める。 A process of forming a protective film using the
First, in the preliminary test, the protective film is formed under the same conditions (metal oxide type, film forming pressure, heating temperature, transport speed, etc.) as when the protective film was actually formed, and formed at the film forming position. The relationship between the film thickness growth amount per unit time (static deposition rate) when the object is stationary and the emission intensity of a specific wavelength when the metal oxide evaporates is obtained.
仕込室31と取出室33と真空槽32を真空排気系52a~52cで真空排気し、所定圧力の真空雰囲気を形成する。第一のガラス基板11に電極(維持電極15と走査電極16)と、誘電体膜12とが形成された状態の第一のパネル10を成膜対象物とし、保持手段47に保持させ、仕込室31に搬入する。 The static film formation rate is determined in the range of 40 nm / second or more, and the determined static film formation rate and the relationship obtained in the preliminary test are set in the
The
蒸発源36に粒状の金属酸化物を配置しておく。水(水蒸気)と酸素の導入量は不図示の流量制御装置(マスフローコントローラ)により制御可能であり、水の単位時間当たりの導入体積が、酸素の単位時間当たりの導入体積よりも多くなるように、水と酸素を導入しながら電子線42を照射して、金属酸化物の蒸気を発生させる。 Heating means 59 is disposed inside the
A granular metal oxide is disposed in the
搬出された第一のパネル10と、上述した第二のパネル20とを貼り合せ、第一、第二のパネル10、20の間に封入ガスを配置すれば、図1のプラズマディスプレイパネル1が得られる。 The
If the carried out
金属酸化物の混合物を用いる場合、混合物のうち、いずれか1種以上の金属酸化物について、解離金属の酸化時の発光強度を測定することで、電子銃を制御して膜特性の安定化をはかることが可能である。 The metal oxide used in the present invention is MgO alone or a mixture of MgO and another metal oxide (either SrO or CaO or both).
When a mixture of metal oxides is used, the electron gun is controlled to stabilize film characteristics by measuring the emission intensity during oxidation of the dissociated metal for any one or more metal oxides in the mixture. It is possible to measure.
蒸着材料は金属酸化物に限定されず、上述した金属酸化物を主成分とし、Caと、Alと、Siと、Mnと、Euと、Tiとからなる群より選択される少なくとも1種類の添加剤を添加することもできる。 In the case of using a mixture of metal oxides, it is very difficult to monitor a plurality of substances by a conventional method (for example, a crystal oscillation type film formation controller, CRTM), but by monitoring the intensity of a specific wavelength, It is possible to control the characteristics of the protective film made of a plurality of types of metal oxides using the mixture.
The vapor deposition material is not limited to the metal oxide, but includes at least one kind selected from the group consisting of the above-described metal oxide, Ca, Al, Si, Mn, Eu, and Ti. An agent can also be added.
以上は、制御装置45が電子線42の照射面積を変えて発光強度を設定値にする場合について説明したが、本発明はこれに限定されず、電子銃41のパワー密度(W/cm2)を変えて発光強度を設定値にしてもよい。 If the film thickness distribution of the
The above has described the case where the
蒸発源36は静止させてもよいが、蒸発源36を搬送経路51の真下位置で、搬送経路51と平行な平面内で回転させてもよい。 In FIG. 2, the
Although the
基板ホルダを回転させ、成膜対象物を蒸発源36と対面する平面内で回転させれば、保護膜14の膜厚分布が均一になる。 When the distance between the
When the substrate holder is rotated and the film formation target is rotated in a plane facing the
水の導入量は酸素の導入量よりも多量であれば特に限定されないが、200sccm以上が望ましい。 Moreover, even if a large amount of water was introduced into the vacuum chamber, if the film formation rate was the same as before (less than 40 nm / second), the peak intensity of the (111) crystal orientation was small and did not reach the practical level. In the present invention, it is essential to introduce water into the vacuum chamber and to set the film formation rate to 40 nm / second or more (more desirably 140 nm / second or more).
The amount of water introduced is not particularly limited as long as it is larger than the amount of oxygen introduced, but it is preferably 200 sccm or more.
上記成膜装置3を用い、材料室35に酸素の導入量より多くなるよう水を導入しながら形成した保護膜の(111)強度と充填率の関係を図3のE1~E4に示す。代表的な成膜条件を下記表1に示し、材料室35に導入した水(H2Oガス)の分析結果を下記表2に示す。 <Crystal orientation and film density>
E1 to E4 in FIG. 3 show the relationship between the (111) strength and the filling rate of the protective film formed by introducing water so that the amount of oxygen introduced into the
実施例と比較例の保護膜について、(111)配向の回折強度と、屈折率を測定し、屈折率から充填率(膜密度)を求めた。屈折率はエリプソメータで測定した。屈折率をn、充填率(膜密度)をp、空間の屈折率をnv、バルクの屈折率をnsとすると、屈折率nは下記数式(1)で表される。 C1 to C3 in FIG. 3 show the relationship between the (111) strength and the filling rate of the protective film formed by introducing only oxygen without introducing H 2 O.
About the protective film of an Example and a comparative example, the diffraction intensity and refractive index of (111) orientation were measured, and the filling factor (film | membrane density) was calculated | required from the refractive index. The refractive index was measured with an ellipsometer. When the refractive index is n, the filling rate (film density) is p, the spatial refractive index is nv, and the bulk refractive index is ns, the refractive index n is expressed by the following formula (1).
空間の屈折率nvは通常は空気で1であり、バルクの屈折率はMgO単結晶の場合は1.73であるから、MgOの充填率pは、屈折率から下記数式(2)で求められる。
数式(2)…p=(n-1)/0.73
図3から分かるように、(111)ピーク強度3000CPSのMgO膜の充填率は、比較例では88.7%であったのに対し、実施例のMgO膜では90.7%になり約2ポイント改善された。 Formula (1) ... n = (1-p) nv + pns
Since the refractive index nv of the space is usually 1 in air and the refractive index of the bulk is 1.73 in the case of MgO single crystal, the filling rate p of MgO can be obtained from the refractive index by the following formula (2). .
Formula (2) ... p = (n-1) /0.73
As can be seen from FIG. 3, the filling rate of the MgO film having the (111) peak intensity of 3000 CPS was 88.7% in the comparative example, whereas it was 90.7% in the MgO film of the example, which was about 2 points. Improved.
水の導入量を変え、(111)配向ピークの半値幅を測定した。半値幅と水導入量との関係を図4に示す。図4の横軸は水導入量(sccm)、縦軸は半値幅を示しており、半値幅が小さい程結晶性が良いことを示す。本発明によれば、従来よりも、半値幅が40%位改善されており、本発明により成膜された保護膜は結晶性が良いことが確認された。
以上のことから、MgOの蒸発速度を増加させて静的成膜速度を速くし、水を導入しながら成膜を行えば、従来に比べて保護膜の結晶性が大幅に改善されることが分かる。 <Relationship between water introduction amount and (111) half width>
The half-width of the (111) orientation peak was measured by changing the amount of water introduced. The relationship between the full width at half maximum and the amount of water introduced is shown in FIG. The horizontal axis in FIG. 4 indicates the amount of water introduced (sccm), and the vertical axis indicates the half width. The smaller the half width, the better the crystallinity. According to the present invention, the full width at half maximum was improved by about 40% as compared with the prior art, and it was confirmed that the protective film formed by the present invention has good crystallinity.
From the above, increasing the evaporation rate of MgO to increase the static film formation rate, and performing film formation while introducing water can significantly improve the crystallinity of the protective film compared to the conventional case. I understand.
電子銃のパワー密度を変えずに、照射面積を広くしてMgOを蒸発させて保護膜を成膜した。MgOを蒸発させる時の波長285.2nmの発光強度を大塚電子(株)社製の分光モニターで測定した。成膜された保護膜の(111)ピーク強度を求めた。発光強度とピーク強度の関係を図5に示す。
図5から分かるように、発光強度が大きくなる程、(111)ピーク強度が高くなり、保護膜の膜質が改善されたことが分かる。 <Relationship between emission intensity and (111) peak intensity>
Without changing the power density of the electron gun, the irradiation area was widened to evaporate MgO to form a protective film. The emission intensity at a wavelength of 285.2 nm when MgO was evaporated was measured with a spectroscopic monitor manufactured by Otsuka Electronics Co., Ltd. The (111) peak intensity of the formed protective film was determined. FIG. 5 shows the relationship between the emission intensity and the peak intensity.
As can be seen from FIG. 5, as the emission intensity increases, the (111) peak intensity increases and the film quality of the protective film is improved.
上記表1の成膜条件で保護膜を成膜した時の、放出光の波長と発光強度とを測定した。その測定結果を図6に示す。比較例として、水の導入量をゼロとした以外は、上記表1の成膜条件で保護膜を成膜した時の放出光の波長と発光強度を測定した。その結果を図7に示す。 <Emission spectrum>
The wavelength and emission intensity of the emitted light when the protective film was formed under the film forming conditions shown in Table 1 above were measured. The measurement results are shown in FIG. As a comparative example, the wavelength and emission intensity of emitted light were measured when a protective film was formed under the film forming conditions shown in Table 1 except that the amount of water introduced was zero. The result is shown in FIG.
水を導入した場合の保護膜と、水を導入しなかった場合の保護膜の電子顕微鏡写真を図9、10に示す。図9、10の黒く見える部分はMgO柱状結晶とMgO柱状結晶の間の隙間である。この柱状結晶の隙間が小さい程、不純ガスの吸着量が減り、またエッチングされ難いことを示す。
図9、10を比較すると、図9の方が柱状結晶の隙間が少なく、水を導入した方が不純ガスを吸着し難く、かつ、エッチングされ難い保護膜が形成されることが分かる。 <Comparison of protective film characteristics with and without water introduction>
FIGS. 9 and 10 show electron micrographs of the protective film when water is introduced and the protective film when water is not introduced. The portions that appear black in FIGS. 9 and 10 are gaps between the MgO columnar crystals and the MgO columnar crystals. As the gap between the columnar crystals is smaller, the amount of impure gas adsorbed is reduced and etching is difficult.
9 and 10, it can be seen that FIG. 9 has fewer gaps between the columnar crystals, and that a protective film that is less likely to adsorb impure gas and less etched is formed when water is introduced.
数式(3)…Rs(Å/秒)=Rd(Å・m/秒)×2.12 The coefficient for converting the static deposition rate varies depending on the deposition apparatus to be used, but in this case, it is 2.12. If the static deposition rate is Rs and the dynamic deposition rate is Rd, the static deposition rate is static. The film formation rate Rs is expressed by the following mathematical formula (3).
Formula (3): Rs (s / sec) = Rd (Å · m / sec) × 2.12
Claims (12)
- 真空槽内に酸素を導入しながら、蒸発源に配置された金属酸化物を加熱して、前記金属酸化物の蒸気を発生させ、
表面に電極が配置された第一のパネルを、前記真空槽内の搬送経路を搬送して、前記蒸発源と対面する成膜位置を通過させ、前記電極上に金属酸化物の薄膜からなる保護膜を形成した後、
前記第一のパネルを第二のパネルと貼り合せ、前記保護膜がプラズマに曝されるプラズマディスプレイパネルを製造するプラズマディスプレイパネルの製造方法であって、
前記真空槽内に、単位時間当たりの導入体積が、前記酸素の単位時間当たりの導入体積と同じかそれよりも多くなるように、水を導入しながら、
前記第一のパネルが当該成膜位置で静止した場合の前記保護膜の成膜速度が、40nm/秒以上になるように前記金属酸化物を蒸発させながら、前記第一のパネルを搬送するプラズマディスプレイパネルの製造方法。 While introducing oxygen into the vacuum chamber, the metal oxide disposed in the evaporation source is heated to generate the vapor of the metal oxide,
A first panel having an electrode disposed on its surface is transported through a transport path in the vacuum chamber, passed through a film formation position facing the evaporation source, and protected from a metal oxide thin film on the electrode. After forming the film
A method for manufacturing a plasma display panel, wherein the first panel is bonded to a second panel, and the protective film is manufactured to be exposed to plasma.
While introducing water into the vacuum chamber so that the introduction volume per unit time is equal to or more than the introduction volume per unit time of the oxygen,
Plasma transporting the first panel while evaporating the metal oxide so that the deposition rate of the protective film is 40 nm / second or more when the first panel is stationary at the deposition position. Display panel manufacturing method. - 表面に電極が配置された第一のパネルを、真空槽内部の蒸発源と対面する成膜位置に配置し、
前記真空槽内に酸素を導入しながら、前記蒸発源に配置された金属酸化物を加熱して、前記金属酸化物の蒸気を発生させ、前記第一のパネルの前記電極上に金属酸化物の薄膜からなる保護膜を形成した後、
前記第一のパネルを第二のパネルとを貼り合せ、前記保護膜がプラズマに曝されるプラズマディスプレイパネルを製造するプラズマディスプレイパネルの製造方法であって、
前記真空槽内に、単位時間当たりの導入体積が、前記酸素の単位時間当たりの導入体積と同じか、それよりも多くなるように、水を導入しながら、
前記保護膜の成膜速度が40nm/秒以上になるように、前記金属酸化物を蒸発させるプラズマディスプレイパネルの製造方法。 The first panel with electrodes on the surface is placed at the deposition position facing the evaporation source inside the vacuum chamber,
While introducing oxygen into the vacuum chamber, the metal oxide disposed in the evaporation source is heated to generate the vapor of the metal oxide, and the metal oxide is deposited on the electrode of the first panel. After forming a protective film consisting of a thin film,
A method of manufacturing a plasma display panel for manufacturing a plasma display panel in which the first panel is bonded to a second panel, and the protective film is exposed to plasma,
While introducing water into the vacuum chamber so that the introduction volume per unit time is the same as or larger than the introduction volume per unit time of the oxygen,
A method of manufacturing a plasma display panel, wherein the metal oxide is evaporated so that a film forming rate of the protective film is 40 nm / second or more. - 前記金属酸化物に電子線を照射して蒸発させる請求項1又は請求項2のいずれか1項記載のプラズマディスプレイパネルの製造方法。 The method for manufacturing a plasma display panel according to claim 1, wherein the metal oxide is evaporated by irradiating the metal oxide with an electron beam.
- 前記真空槽の全圧を、1×10-1Paを超える圧力にして、前記金属酸化物の蒸気を発生させる請求項1乃至請求項3のいずれか1項記載のプラズマディスプレイパネルの製造方法。 4. The method for manufacturing a plasma display panel according to claim 1, wherein the vapor pressure of the metal oxide is generated at a total pressure of the vacuum chamber exceeding 1 × 10 −1 Pa. 5.
- 前記金属酸化物はMgOである請求項1乃至請求項4のいずれか1項記載のプラズマディスプレイパネルの製造方法。 The method for manufacturing a plasma display panel according to any one of claims 1 to 4, wherein the metal oxide is MgO.
- 前記金属酸化物はMgOを含有し、SrOとCaOのいずれか一方又は両方が添加された請求項1乃至請求項4のいずれか1項記載のプラズマディスプレイパネルの製造方法。 The method for manufacturing a plasma display panel according to any one of claims 1 to 4, wherein the metal oxide contains MgO, and one or both of SrO and CaO are added.
- 前記金属酸化物を蒸発させる際、前記真空槽内に放出される光の発光強度を測定し、
前記発光強度の測定値が、予め設定された値になるように、前記金属酸化物を蒸発させる加熱装置の出力を変える請求項1乃至請求項6のいずれか1項記載のプラズマディスプレイパネルの製造方法。 When evaporating the metal oxide, measure the emission intensity of light emitted into the vacuum chamber,
The plasma display panel manufacturing method according to any one of claims 1 to 6, wherein an output of a heating device for evaporating the metal oxide is changed so that a measured value of the light emission intensity becomes a preset value. Method. - 前記金属酸化物を蒸発させる際、前記真空槽内に放出される光の発光強度を測定し、
前記発光強度の測定値が、予め設定された値になるように、前記電子線の照射面積を変える請求項3乃至請求項7のいずれか1項記載のプラズマディスプレイパネルの製造方法。 When evaporating the metal oxide, measure the emission intensity of light emitted into the vacuum chamber,
The method for manufacturing a plasma display panel according to claim 3, wherein the irradiation area of the electron beam is changed so that the measured value of the emission intensity becomes a preset value. - 真空槽と、前記真空槽内に配置された蒸発源と、前記蒸発源に配置された蒸着材料を加熱する加熱装置と、前記真空槽内に水を導入する水導入口と、前記真空槽内に酸素を導入する酸素導入口とを有する保護膜の成膜装置であって、
前記真空槽内部に発生する光の発光強度を測定する測定装置と、
前記測定装置と前記加熱装置に接続された制御装置とを有し、
前記制御装置は、前記測定装置から伝達される発光強度に基づき、前記加熱装置の出力を変更可能に構成された成膜装置。 A vacuum chamber; an evaporation source disposed in the vacuum chamber; a heating device for heating the vapor deposition material disposed in the evaporation source; a water inlet for introducing water into the vacuum chamber; A protective film forming apparatus having an oxygen inlet for introducing oxygen into
A measuring device for measuring the emission intensity of light generated inside the vacuum chamber;
Having a measuring device and a control device connected to the heating device;
The control device is a film forming device configured to change an output of the heating device based on a light emission intensity transmitted from the measuring device. - 前記加熱装置は電子銃であり、前記制御装置は前記電子銃から放出される電子線の照射面積を変える請求項9記載の成膜装置。 10. The film forming apparatus according to claim 9, wherein the heating device is an electron gun, and the control device changes an irradiation area of an electron beam emitted from the electron gun.
- 前記真空槽内部の搬送経路に沿って成膜対象物を搬送する搬送装置を有し、
前記成膜対象物は前記搬送経路を移動する間に前記蒸発源と対面するようにされ、
前記水導入口は、前記酸素導入口よりも前記蒸発源に近く、かつ、前記搬送経路よりも遠い位置にある請求項9又は請求項10のいずれか1項記載の成膜装置。 A transport device that transports a film formation target along a transport path inside the vacuum chamber;
The film-forming object is made to face the evaporation source while moving along the transfer path,
11. The film forming apparatus according to claim 9, wherein the water inlet is closer to the evaporation source than the oxygen inlet and is further away from the transfer path. - 前記真空槽内部の前記蒸発源と対面する位置で基板を保持する基板ホルダを有し、
前記水導入口は、前記酸素導入口よりも前記蒸発源に近く、かつ、前記基板ホルダに保持された前記基板に遠い位置にある請求項9又は請求項10のいずれか1項記載の成膜装置。 A substrate holder for holding the substrate at a position facing the evaporation source inside the vacuum chamber;
11. The film formation according to claim 9, wherein the water inlet is closer to the evaporation source than the oxygen inlet and is farther from the substrate held by the substrate holder. apparatus.
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