WO2009152503A2 - Procédés pour la croissance épitaxiale de matières à faible teneur en défauts - Google Patents

Procédés pour la croissance épitaxiale de matières à faible teneur en défauts Download PDF

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Publication number
WO2009152503A2
WO2009152503A2 PCT/US2009/047373 US2009047373W WO2009152503A2 WO 2009152503 A2 WO2009152503 A2 WO 2009152503A2 US 2009047373 W US2009047373 W US 2009047373W WO 2009152503 A2 WO2009152503 A2 WO 2009152503A2
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sic
substrate
plane
terraces
iba
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PCT/US2009/047373
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WO2009152503A3 (fr
Inventor
James Edgar
Michael Dudley
Martin Kuball
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James Edgar
Michael Dudley
Martin Kuball
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Publication of WO2009152503A2 publication Critical patent/WO2009152503A2/fr
Publication of WO2009152503A3 publication Critical patent/WO2009152503A3/fr
Priority to US12/966,753 priority Critical patent/US8823014B2/en

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides

Definitions

  • the invention relates generally to methods of fabricating material structures on a substrate, including for example homostructures and/or heterostructures. More specifically, the invention relates to the field of providing a substrate for epitaxial growth of films for device fabrication.
  • FIG. IA shows a perspective view of a semiconductor wafer 10 with devices 20 fabricated in an epitaxial layer (only representative devices 20 are labeled in FIG. IA, for clarity of illustration).
  • FIG. IB shows a cross-sectional view of a portion A in FIG. IA.
  • Wafer 10 includes a substrate 12 and epitaxial layer 14.
  • FIG. 1C shows a cross- sectional view of a portion B in FIG. IB.
  • Substrate 12 is seen as composed of crystalline units 11, while epitaxial layer 14 is seen as composed of crystalline units 13 that stack with the crystal matrix of substrate 12 (only representative crystalline units 11 and 13 are labeled in FIG. 1C, for clarity of illustration).
  • the combination of an epitaxial layer on a substrate is sometimes referred to as a "material structure" herein.
  • the crystalline units may be single atoms or repeating molecular units, and that the number of layers and type of stacking shown are for illustration only (for example, a material structure may be a homostructure or a hetero structure as these terms are known in the art).
  • Actual substrates, epitaxial layer materials, thicknesses and growth parameters will vary according to design of a final, fabricated product.
  • FIG. 2 shows a unit cell 32 of a crystalline structure with a variety of planes thereof illustrated and designated in terms of basic Miller indices, which are a standard form of notation in crystallography to designate particular planes of a crystal.
  • Each of three indices x, y and z indicate a direction that is normal to the designated plane, relative to the Cartesian coordinate system x, y, z as shown.
  • plane 34 is an (001) plane
  • plane 36 is a (100) plane
  • plane 38 is an (010) plane
  • plane 40 is a (101) plane
  • planes 42 are (111) planes
  • planes 44 are (1 -1 1) planes.
  • Unit cell 32 is shown as having simple cubic symmetry (e.g., a lattice constant that is the same in each of the x, y, and z directions). It is convenient, however, when discussing materials having hexagonal structure to utilize a related, four-index Bravais-Miller notation.
  • SiC Silicon Carbide
  • ⁇ -SiC silicon Carbide
  • ⁇ -SiC silicon Carbide
  • SiC polytypes Another form of notation often applied to SiC polytypes indicates the specific crystalline type and number of layers in a repeating structure of the crystal
  • the crystalline types are designated as H (hexagonal), C (cubic) or R (rhombohedral)
  • Three of the most common polytypes are the 3C-SiC, 4H-SiC and 6H-SiC polytypes
  • a 15R-SiC polytype is also relatively common, but has traditionally been viewed as an unusable byproduct of 4H-SiC or 6H-SiC crystal production Not only has 15R-SiC historically been viewed as useless, significant efforts have been made to prevent its formation during processing
  • Beta cells are known examples of semiconductor devices that may be fabricated utilizing epitaxial layers Beta cells are capable of the direct conversion of nuclear into electrical energy
  • the beta cell receives beta particles emitted by some source of radioactive energy, the beta particles excite electron-hole pairs that are separated by an elect ⁇ c field across the semiconductoi junction This creates cu ⁇ ent that can be used as a source of electrical power
  • beta cells may last a considerable amount of time (e.g., corresponding to a half-life of the radioactive source, often decades or more) making them ideal for situations where a long-term power source is needed or battery changing is impractical, such as in heart pacemakers, satellites, and other electrical systems.
  • IBA Icosahedral boron arsenide Bi 2 As 2
  • IBA is a wide band gap semiconductor (3.47eV) with the extraordinary ability to "self-heal" radiation damage, making it an attractive choice. See, e.g., U.S. Patent No. 6,749,919 issued to Aselage et al.
  • IBA is a member of the icosahedral borides family, which also includes boron carbide, alpha-boron, and icosahedral boron phosphide.
  • IBA may be epitaxially grown on a substrate for use in beta cells, and the lattice constant of IBA is a close enough match to that of SiC (that is, the IBA lattice constants match appropriate multiples of the SiC lattice constant, as discussed below) to consider SiC as an appropriate substrate for IBA growth.
  • IBA In addition to possible uses as beta cells, IBA also shows promise for use in other applications where it is desirable to obtain an electrical signal from neutrons emitted from radioactive sources such as a neutron detector. Neutron detectors are useful as an indicator of the presence of radioactive materials, e.g., for security or regulatory compliance purposes. Another potential application of IBA is in thermoelectric converters.
  • a method of epitaxial growth of a material on a crystalline substrate includes selecting a substrate having a crystal plane that includes a plurality of terraces with step risers that join adjacent terraces. Each terrace of the plurality or terraces presents a lattice constant that substantially matches a lattice constant of the material, and each step riser presents a step height and offset that is consistent with portions of the material nucleating on adjacent terraces being in substantial crystalline match at the step riser.
  • the method also includes preparing a substrate by exposing the crystal plane; and epitaxially growing the material on the substrate such that the portions of the material nucleating on adjacent terraces merge into a single crystal lattice without defects at the step risers.
  • a material structure includes a substrate having a crystal plane that includes a first terrace and a second terrace, a step riser between the first and second terraces.
  • Each of the first and second terraces presents a lattice constant that substantially matches a lattice constant of the material, and each step riser presents a step height and offset consistent with portions of the material nucleating on adjacent terraces being in substantial crystalline match at the step riser.
  • the material structure also includes an epitaxially grown material on the substrate that forms portions of the material as a single crystal lattice upon each terrace, that join as a single crystal over the step risers, without defects associated with the step risers.
  • a material structure includes an icosahedral boride material deposited on an m-plane substrate selected from the group of substrates consisting of 15R-SiC, 45R-SiC, 60R-SiC, 25H-SiC, 48R-SiC, 21H-SiC, and 78R-SiC.
  • a method of making a material structure includes employing epitaxial layers of materials, reducing in-plane twinning and translational variants using a substrate selected from a group consisting of: 15R-SiC, 45R-SiC, 60R-SiC, 25H-SiC, 48R-SiC, 21H-SiC, and 78R-SiC; and preparing the substrate with m-plane orientation surfaces.
  • FIG. IA shows a wafer with semiconductor devices fabricated thereon.
  • FIG. IB is a detailed cross-sectional view of a portion of the wafer of FIG. IA.
  • FIG. IB is a further detailed cross-sectional view of a portion of the wafer of FIG. IA.
  • FIG. 2 shows a unit cell of a crystalline structure with planes thereof designated in terms of basic Miller indices.
  • FIG. 3 illustrates the coordinate system of Bravais-Miller notation.
  • FIG. 4 shows a plot of Raman spectra recorded from IBA grown on m-plane 15R- and 6H-SiC, in accord with an embodiment.
  • FIG. 5 shows HRTEM images showing a sharp IBA/15R-SiC interface and the (353) surface orientation of IBA, in accord with an embodiment.
  • FIG. 6 is a cross-sectional crystal schematic of the 15R-SiC structure, in accord with an embodiment.
  • FIG. 7 shows a plan view of IBA in a non-twinned, (353) orientation nucleated on m-plane 15R-SiC terraces, in accord with an embodiment.
  • FIG. 8 shows a perspective view of IBA in a non-twinned, (353) orientation nucleated on m-plane 15R-SiC terraces, in accord with an embodiment.
  • FIG. 9 shows a plan view of IBA in a twinned, (353) orientation adjacent to m-plane 15R-SiC terraces.
  • FIG. 10 shows a perspective view of IBA in a twinned, (353) orientation adjacent to m-plane 15R-SiC terraces.
  • FIG. 11 shows polytype stacking-layer variations of SiC that may be useful as substrates for epitaxial growth, in accord with embodiments.
  • Embodiments of the present invention provide improved semiconductor material structures and devices, as well as the method for making those material structures and devices.
  • IBA growth on m-plane (1 -1 0 0) 15R-SiC is but an example of selecting a substrate that presents a plurality of terraces with step risers therebetween, each of which substantially matches lattice constants of a film grown thereon such that independently nucleated portions of the film naturally grow together without twinning defects.
  • substantially crystalline match is utilized herein to mean that crystalline portions that initially nucleate and grow independently of one another are identical in orientation, and close enough to matching juxtaposition with one another, that they grow together into a unified single crystal without forming defects where they join.
  • IBA is based on twelve-boron-atom icosahedra, which reside at the corners of an ⁇ -rhombohedral unit cell, and two-atom As-As chains lying along the rhombohedral axis.
  • IBA has been heteroepitaxially grown on substrates with compatible structural parameters. For example, until recently, this has been attempted on substrates with higher symmetry than IBA, such as Si and 6H-SiC.
  • substrates with higher symmetry than IBA such as Si and 6H-SiC.
  • growth of a lower symmetry epilayer on a higher symmetry substrate often produces structural variants, a phenomenon known as degenerate epitaxy.
  • the lower symmetry epilayer may nucleate in different areas in different orientations (for example, as mirror images of one another) such that where the separately-nucleated crystals grow together, double positioning boundary defects ('"DPBs " ) or "twinning" defects form.
  • DPBs have a detrimental effect on device performance in that they form electrical leakage paths that have severely hindered progress of this new material to date.
  • An enumeration of these variants can be obtained by analysis of the 2D point groups of the substrate surface and the epilayer surface. For the case of IBA grown on Si with (100), (110) and (111) orientation and (0001) 6H-SiC, rotational and translational variants are both predicted and observed.
  • 15R-SiC as well as its related polytypes have traditionally been viewed as unusable byproducts of 4H-SiC or 6H-SiC crystal production. Not only has 15R-SiC historically been viewed as useless, significant efforts have been made to prevent its formation during processing. Thus, the utilities disclosed herein are contrary to most conventional expectations.
  • IBA was deposited using chemical vapor deposition (CVD) onto m-plane 15R-SiC at 1200 0 C and 500 Torr of reactor pressure for 1 hour, using 1% B 2 H 6 in H 2 and 2% AsH 3 in H 2 as sources.
  • the epitaxial IBA film had a nominal thickness of 3 ⁇ m.
  • a commercial m-plane 6H-SiC substrate was used, which contained 15R- SiC inclusions of about 300-500 ⁇ m diameter.
  • the film/substrate orientations were determined by synchrotron white beam x-ray topography (SWBXT).
  • FIG 4 shows a plot 50 of Raman spectra 60 and 70, recorded from IBA grown on m-plane 15R- and 6H-SiC respectively, which confirm this improvement
  • Labeled withm plot 50 are Raman shift regions corresponding to As-As stretching, rotation of boron icosahedra, and inter- and intra-icosahedral modes, also, though there are no 6H-SiC substrate modes m the spectral range shown, one 15R-SiC mode exists Raman lmewidth is narrower at a given intensity for the IBA film grown on 15R-SiC, and in particular Raman intensity is significantly stronger than that of the IBA film grown on 6H-SiC, despite both films having
  • FIG 5 shows a HRTEM image 75 recorded along the [1 0 -1] zone axis (parallel to [1 1 -2 0] in the hexagonal system) showing an IB A/15R-SiC interface and the (353) surface orientation of IBA T-shaped symbols 77 mark the location of mterfacial dislocations with extra half-planes in the 15R-SiC substrate
  • the 15R-SiC substrate shows a relatively clean interface and no twins in the grown IBA film, in contrast to results from m-plane 6H-SiC
  • FIG 6 is a cross-sectional crystal schematic 80 along [1 0 -1] of the 15R-SiC structure.
  • An uppermost black line 82 traverses an on-axis, facet configuration of close-packed (474) atomic terraces 90, and coupled (212) and (1 1 '8' 1 1) step risers 92 and 94 respectively (not all terraces 90 or risers 92 or 94 are labeled within FIG. 6, for clarity of illustration).
  • a middle black line 84 indicates the theoretical (i.e., unfaceted) m-plane itself, and a lower black line 86 indicates the surface comprising only (474) and (212) facets - which results in a 3° misorientation from m-plane.
  • FIG. 6 also shows regions that may be thought of as lamellar nano-domains of 3C-SiC structure bounded by the (474) facets are shown as regions 88, and shaded domain boundaries parallel to the (111) plane ((0001) in hexagonal system) as cross hatched regions 89.
  • the substrate surface was exclusively composed of (474) and (212) facets, the asymmetry in the widths of such facets would result in a -3° offset from m-plane orientation (e.g., see FIG. 3, line 86).
  • the periodic appearance of (11 -8-1 1) facets would compensate for this asymmetry and produce an "on-axis" surface, as shown in FIG. 3 (upper line).
  • This latter surface can be considered as quasi-vicinal with the (474) facets forming terraces 90 and the other facets as step risers 92 and 94.
  • the stacking sequence below each terrace 90 is identical so as to expose a series of equal thickness, lamellar nano-domains of 3C (cubic) structure leading to identical nucleation possibilities.
  • FIG. 7 shows a plan view 100
  • FIG. 8 shows a perspective view 110, of IBA in a non-twinned, (353) orientation nucleated on m-plane 15R-SiC terraces 90 (which are also shown in FIG. 6).
  • Si and As atoms in views 100 and 110 are labeled, while C atoms are shown as large dots.
  • IBA icosahedra in a non-twinned orientation are also shown. Triangular configurations of B atoms at the bottoms of IBA icosahedra bond to similarly oriented triangular configurations of Si atoms exposed on the (474) 15R-SiC terraces 90, at locations 102.
  • each of the (474) terraces and associated (212) step riser form a spacing of twice the lattice constant of the IBA in a transverse direction of the terrace, that is, a direction leading across each terrace to the adjacent step risers (across the page in FIG. 7 and FIG. 8, not in and out of the page).
  • the step risers present a step height and offset that are consistent with the non-twinned IBA that nucleates on one riser being in substantial crystalline match with the non-twinned IBA that nucleates on an adjacent riser. That is, portions of IBA that nucleate on adjacent terraces will be of identical type, orientation and relative spacing such that the IBA merges into a single crystal lattice without any defect associated with the step riser therebetween.
  • FIG. 9 shows a plan view 120
  • FIG. 10 shows a perspective view 130, of IBA in a twinned, (353) orientation, adjacent to and as if nucleated on m-plane 15R-SiC terraces 90 (which are also shown in FIG. 6).
  • Si and As atoms in views 100 and 110 are labeled, while C atoms are shown as large dots.
  • IBA icosahedra in a twinned orientation are also shown. As is the case for the non- twinned IBA shown in FIGS.
  • the large dimension of the in-plane repeat unit of the (111) IBA (e.g., twice that of the close-packed SiC planes) requires that a facet width be large enough to accommodate nuclei of IBA which are at least two icosahedra wide (e.g., see FIGS. 7 and 8), so preferential nucleation on the broader (474) 15R-SiC terraces 90 is expected. Additional stabilization for nucleation on the (474) 15R-SiC terraces 90 in the non-twinned orientation is provided by the fact that the IBA is able to simultaneously bond to one (474) 15R-SiC terrace 90 and an adjacent (212) 15R- SiC step riser 92, as shown in FIGS. 7 and 8.
  • epitaxial growth proceeds via step flow whereby portions of IBA nucleated on one facet overgrow portions nucleated on the facet below, with the two portions being in substantial crystalline match, the step riser therebetween presenting a step height and offset consistent with the portions merging into a single IBA crystal. This is possible since the spacing of the (111) IBA planes is within 15% of the height difference between adjacent (474) 15R-SiC facets.
  • m-plane 15R-sihcon carbide substrates has been shown to eliminate random variations in the m-plane o ⁇ entation of epitaxial films This is an improvement over the conventional substrates, including c-plane (0001) 4H-SiC and c-plane 6H-SiC, upon which films can nucleate with two or more m-plane orientations
  • the coalescence of regions that nucleate with different orientations on these conventional substrates produces the boundaries between regions of different o ⁇ entations and the structures of the different regions do not match, resulting m crystalline defects and corresponding elect ⁇ cal defects such as leakage paths and trap levels
  • the m-plane 15R-SiC substrate forms an ordered step and terrace structure that makes it energetically favorable for separately nucleating portions of the epitaxial film to adopt only one crystal o ⁇ entation Consequently, regions that originate from different nucleation points have the same orientation, and are able to coalesce without creating defects.
  • the reduction in defects leads to better
  • the substrate should present (a) terraces of a few (e.g., two to ten) times a lattice constant of the material being grown, and (b) step risers between the terraces that present a step height and offset consistent with a substantial crystalline match between portions of material grown on adjacent ten-aces, such that such portions grow together naturally into a single crystal lattice.
  • An upper limit of terrace width is related to a size at which multiple crystals of the grown material begin to form, presenting the possibility of degenerate epitaxy and thus defeating the tendency for multiple sites to nucleate in the same orientation.
  • a maximum terrace width being ten times a lattice constant is seen as a general rule of thumb, but individual substrate materials and grown materials may require narrower terraces or may allow wider terraces, respectively, without nucleating material in the wrong orientation.
  • the step height and offset presented by each step riser should be consistent with a substantial crystalline match between portions of material grown on adjacent terraces (for example, such step height and offset might be within about 15% of a height and offset required for a perfect match of the grown material).
  • step riser surfaces may energetically favor nucleation of the grown material in a specific orientation, such as the (212) 15R-SiC presents C atoms for bonding to IBA in the non-twinned orientation as opposed to the twinned orientation.
  • mate ⁇ als exist which could be suitable for comprising the substrate of material systems disclosed herein
  • other polytypes could be used which have the same local structure as 15R- SiC, including 45R-SiC, 60R-SiC, 25H-SiC, 48R-SiC, 21H-SiC, 78R-SiC, 48R-SiC, 21H-SiC, and 78R-SiC
  • FIG 11 shows polytype stackmg-layer variations of SiC that may be useful as substrates for epitaxial growth, in addition to 15R-SiC, it is understood that other substrate materials that exhibit polytypism may present similar opportunities for substantially matching a mate ⁇ al grown thereon Such materials include but are not limited to zinc sulfide, lead iodide, titanium sulfide and cadmium iodide
  • a partial and non-hmitmg list of possible applications for embodiments herein include uses such as (i) icosahedral boron arsenide or boron phosphide neutron detectors, (n) icosahedral boron arsenide or boron phosphide beta or alpha cells for the direct conversion of nuclear energy to electrical energy, (in) 3C- sihcon carbide transistors and diodes, for high power, high frequency, and high temperature operation, in energy pioduction and transmission, transportation (electric vehicles), and communications industries, (iv) 3C-SiC/l 5R-SiC heterojunction diodes and transistors for high power, high frequency, and high temperature operation, m energy production and transmission, transportation (electric vehicles), and communications industries, (v) silicon carbide metal oxide semiconductor field effect transistors (MOSFETS) based on alternative epitaxial dielectrics such as magnesium oxide, (vi) all silicon carbide devices with applications for high power, high frequency, and high temperature

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Abstract

L'invention porte sur un procédé pour la croissance épitaxiale d'une matière sur un substrat cristallin comprenant la sélection d'un substrat ayant un plan cristallin qui comprend une pluralité de terrasses avec des contremarches qui relient des terrasses adjacentes. Chaque terrasse de la pluralité de terrasses présente une constante de réseau cristallin qui correspond pratiquement à une constante de réseau cristallin de la matière et chaque contremarche présente une hauteur de marche et un décalage qui sont cohérents avec le fait que des parties de la matière subissant une nucléation sur des terrasses adjacentes correspondent pratiquement du point de vue cristallin à la contremarche. Le procédé comprend également la préparation d'un substrat par exposition du plan cristallin ; et croissance épitaxiale de la matière sur le substrat de façon à ce que les parties de la matière subissant une nucléation sur des terrasses adjacentes se rejoignent en un réseau cristallin unique sans défauts au niveau des contremarches.
PCT/US2009/047373 2008-06-13 2009-06-15 Procédés pour la croissance épitaxiale de matières à faible teneur en défauts WO2009152503A2 (fr)

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WO2019152782A1 (fr) * 2018-02-05 2019-08-08 The Regents Of The University Of California Arséniure de bore à conductivité thermique élevée pour des applications de gestion thermique, électronique, optoélectronique et photonique
US11948858B2 (en) 2018-02-05 2024-04-02 The Regents Of The University Of California High thermal conductivity boron arsenide for thermal management, electronics, optoelectronics, and photonics applications

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