WO2009136767A3 - A ferroelectric material and a ferroelectric layer formation method using the same - Google Patents

A ferroelectric material and a ferroelectric layer formation method using the same Download PDF

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Publication number
WO2009136767A3
WO2009136767A3 PCT/KR2009/002445 KR2009002445W WO2009136767A3 WO 2009136767 A3 WO2009136767 A3 WO 2009136767A3 KR 2009002445 W KR2009002445 W KR 2009002445W WO 2009136767 A3 WO2009136767 A3 WO 2009136767A3
Authority
WO
WIPO (PCT)
Prior art keywords
ferroelectric
ferroelectric material
present
formation method
same
Prior art date
Application number
PCT/KR2009/002445
Other languages
French (fr)
Korean (ko)
Other versions
WO2009136767A2 (en
Inventor
박병은
Original Assignee
서울시립대학교산학협력단
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 서울시립대학교산학협력단 filed Critical 서울시립대학교산학협력단
Publication of WO2009136767A2 publication Critical patent/WO2009136767A2/en
Publication of WO2009136767A3 publication Critical patent/WO2009136767A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
    • H01B3/10—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances metallic oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
    • H01B3/12—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances ceramics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8548—Lead based oxides
    • H10N30/8554—Lead zirconium titanate based
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8561—Bismuth based oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/516—Insulating materials associated therewith with at least one ferroelectric layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors

Abstract

The present invention relates to a ferroelectric material used as a component of an electronic and electrical material and a ferroelectric layer formation method using the same. In one embodiment of the present invention, a metallic material, Fe, is mixed with an existing ferroelectric material to form a novel ferroelectric material. The ferroelectric material of the present invention has a very high value of remanent polarization, compared with existing ferroelectric materials. Accordingly, the ferroelectric material according to the present invention can advantageously be employed as a material for a semiconductor memory or piezoelectric element, etc.
PCT/KR2009/002445 2008-05-08 2009-05-08 A ferroelectric material and a ferroelectric layer formation method using the same WO2009136767A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2008-0042854 2008-05-08
KR20080042854 2008-05-08

Publications (2)

Publication Number Publication Date
WO2009136767A2 WO2009136767A2 (en) 2009-11-12
WO2009136767A3 true WO2009136767A3 (en) 2010-03-04

Family

ID=41265184

Family Applications (2)

Application Number Title Priority Date Filing Date
PCT/KR2009/002449 WO2009136771A2 (en) 2008-05-08 2009-05-08 Ferroelectric material and a ferroelectric layer formation method using the same
PCT/KR2009/002445 WO2009136767A2 (en) 2008-05-08 2009-05-08 A ferroelectric material and a ferroelectric layer formation method using the same

Family Applications Before (1)

Application Number Title Priority Date Filing Date
PCT/KR2009/002449 WO2009136771A2 (en) 2008-05-08 2009-05-08 Ferroelectric material and a ferroelectric layer formation method using the same

Country Status (2)

Country Link
KR (1) KR20090117665A (en)
WO (2) WO2009136771A2 (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0657412A (en) * 1992-03-30 1994-03-01 Anelva Corp Production of pzt thin film and sputtering device
US20010053740A1 (en) * 2000-06-05 2001-12-20 Chang-Jung Kim Bismuth lanthanum titanate (BLT), BLT thin film, and electronic device including the BLT thin film
JP2004079691A (en) * 2002-08-14 2004-03-11 Sumitomo Metal Mining Co Ltd Blt ferrodielectric thin film capacitor and method of manufacturing the same
US20060223931A1 (en) * 2005-04-01 2006-10-05 Samsung Electro-Mechanics Co., Ltd. High-dielectric constant metal-ceramic-polymer composite material and method for producing embedded capacitor using the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0657412A (en) * 1992-03-30 1994-03-01 Anelva Corp Production of pzt thin film and sputtering device
US20010053740A1 (en) * 2000-06-05 2001-12-20 Chang-Jung Kim Bismuth lanthanum titanate (BLT), BLT thin film, and electronic device including the BLT thin film
JP2004079691A (en) * 2002-08-14 2004-03-11 Sumitomo Metal Mining Co Ltd Blt ferrodielectric thin film capacitor and method of manufacturing the same
US20060223931A1 (en) * 2005-04-01 2006-10-05 Samsung Electro-Mechanics Co., Ltd. High-dielectric constant metal-ceramic-polymer composite material and method for producing embedded capacitor using the same

Also Published As

Publication number Publication date
KR20090117665A (en) 2009-11-12
WO2009136771A3 (en) 2010-03-04
WO2009136771A2 (en) 2009-11-12
WO2009136767A2 (en) 2009-11-12

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