WO2009131674A3 - Bolometric sensor with high tcr and tunable low resistivity - Google Patents
Bolometric sensor with high tcr and tunable low resistivity Download PDFInfo
- Publication number
- WO2009131674A3 WO2009131674A3 PCT/US2009/002484 US2009002484W WO2009131674A3 WO 2009131674 A3 WO2009131674 A3 WO 2009131674A3 US 2009002484 W US2009002484 W US 2009002484W WO 2009131674 A3 WO2009131674 A3 WO 2009131674A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- phase
- operating
- resistivity
- tcr
- nhbs
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/06—Arrangements for eliminating effects of disturbing radiation; Arrangements for compensating changes in sensitivity
- G01J5/061—Arrangements for eliminating effects of disturbing radiation; Arrangements for compensating changes in sensitivity by controlling the temperature of the apparatus or parts thereof, e.g. using cooling means or thermostats
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/06—Arrangements for eliminating effects of disturbing radiation; Arrangements for compensating changes in sensitivity
- G01J5/064—Ambient temperature sensor; Housing temperature sensor; Constructional details thereof
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
- G01J5/0803—Arrangements for time-dependent attenuation of radiation signals
- G01J5/0804—Shutters
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J2005/0077—Imaging
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Radiation Pyrometers (AREA)
- Thermistors And Varistors (AREA)
Abstract
The present invention provides a novel way of operating sensing elements or bolometers in the resistive hysteresis region of a phase-transitioning VO2 (or doped VO2) films. The invention is based on a novel principle that minor hysteresis loops inside the major loop become single-valued or non-hysteretic for sufficiently small temperature excursions. This single valued R(T) branches being characterized by essentially the same temperature coefficient of resistivity (TCR) as the semiconducting phase at room temperature. These non-hysteretic branches (NHB) can be located close to the metallic-phase end of the major loop, thus providing for tunable resistivity orders of magnitude lower than that of a pure semiconducting phase. Operating the Focal Plan Array in one of these NHBs allows for having high TCR and low resistivity simultaneously. Means for measuring of the sensor R(T) characteristic is provided together with the means of achieving and controlling the correct sensor positioning at the operating temperature inside one of these NHBs.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/924,930 US8158941B2 (en) | 2009-04-21 | 2010-10-08 | Bolometric sensor with high TCR and tunable low resistivity |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12508008P | 2008-04-21 | 2008-04-21 | |
US61/125,080 | 2008-04-21 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/924,930 Continuation US8158941B2 (en) | 2009-04-21 | 2010-10-08 | Bolometric sensor with high TCR and tunable low resistivity |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2009131674A2 WO2009131674A2 (en) | 2009-10-29 |
WO2009131674A3 true WO2009131674A3 (en) | 2011-02-17 |
Family
ID=41217333
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2009/002484 WO2009131674A2 (en) | 2008-04-21 | 2009-04-21 | Bolometric sensor with high tcr and tunable low resistivity |
Country Status (1)
Country | Link |
---|---|
WO (1) | WO2009131674A2 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8871363B2 (en) * | 2009-09-03 | 2014-10-28 | National Institute Of Advanced Industrial Science And Technology | Resistor film for bolometer |
FR3061549B1 (en) * | 2016-12-30 | 2020-10-02 | Commissariat Energie Atomique | ELECTROMAGNETIC RADIATION DETECTOR AND ESPECIALLY INFRARED RADIATION DETECTOR AND PROCESS FOR ITS REALIZATION |
US20240003751A1 (en) * | 2022-07-01 | 2024-01-04 | International Business Machines Corporation | Adjustable transition edge thermometer |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6346703B1 (en) * | 1999-03-27 | 2002-02-12 | Lg Electronics Inc. | Resistive bolometer sensor |
US20030168599A1 (en) * | 2000-07-25 | 2003-09-11 | Kevin Liddiard | Active or self-biasing micro-bolometer infrared detector |
US20070029484A1 (en) * | 1999-10-07 | 2007-02-08 | Infrared Solutions, Inc. | Microbolometer focal plane array with temperature compensated bias |
US20080237467A1 (en) * | 2007-03-27 | 2008-10-02 | Nec Corporation | Bolometer-type thz-wave detector |
-
2009
- 2009-04-21 WO PCT/US2009/002484 patent/WO2009131674A2/en active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6346703B1 (en) * | 1999-03-27 | 2002-02-12 | Lg Electronics Inc. | Resistive bolometer sensor |
US20070029484A1 (en) * | 1999-10-07 | 2007-02-08 | Infrared Solutions, Inc. | Microbolometer focal plane array with temperature compensated bias |
US20030168599A1 (en) * | 2000-07-25 | 2003-09-11 | Kevin Liddiard | Active or self-biasing micro-bolometer infrared detector |
US20080237467A1 (en) * | 2007-03-27 | 2008-10-02 | Nec Corporation | Bolometer-type thz-wave detector |
Also Published As
Publication number | Publication date |
---|---|
WO2009131674A2 (en) | 2009-10-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Wang et al. | Nanostructured vanadium oxide thin film with high TCR at room temperature for microbolometer | |
Saunders et al. | Uncertainty budgets for calibration of radiation thermometers below the silver point | |
ATE509258T1 (en) | BOLOMETRIC DETECTOR FOR ELECTROMAGNETIC RADIATION IN THE SPECtral RANGE FROM INFRARED TO TERAHERTZ AND DETECTOR ARRANGEMENT WITH SUCH DETECTORS. | |
WO2005112140A3 (en) | Thin film ceramic thermocouples | |
Émond et al. | Low resistivity WxV1− xO2-based multilayer structure with high temperature coefficient of resistance for microbolometer applications | |
WO2009131674A3 (en) | Bolometric sensor with high tcr and tunable low resistivity | |
WO2009041241A1 (en) | Sensor threshold value circuit | |
Hou et al. | Enhanced performances of CMOS-MEMS thermopile infrared detectors using novel thin film stacks | |
Lee et al. | Wide-temperature (up to 100° C) operation of thermostable vanadium oxide based microbolometers with Ti/MgF2 infrared absorbing layer for long wavelength infrared (LWIR) detection | |
Luchechko et al. | Dual‐Channel Solar‐Blind UV Photodetector Based on β‐Ga2O3 | |
CN101532886A (en) | Temperature sensing module | |
Khan et al. | High Sensitivity Long-Wave Infrared Detector Design Based on Integrated Plasmonic Absorber and VO₂ Nanobeam | |
WO2011129689A4 (en) | Calibration device for thermometers | |
MD3436C2 (en) | Bolometer | |
OuYang et al. | Fabrication and characterization of back-incident optically immersed bolometer based on Mn–Co–Ni–O thin films for infrared detection | |
KR101274026B1 (en) | Bolometric infrared sensor improving resistive run-to-run variation and method for manufacturing the same | |
US10488263B2 (en) | Thin film structure for micro-bolometer and method for fabricating the same | |
Hai et al. | Uncooled silicon germanium oxide (Si [sub] x [/sub] Ge [sub] y [/sub] O [sub] 1-xy [/sub]) thin films for infrared detection | |
CN208765847U (en) | A kind of optical detector enhancing light absorption | |
Lu et al. | Nb5N6 thin film on silicon and silicon oxide: A good material for terahertz detection | |
US10371571B2 (en) | Thin film structure for micro-bolometer and method for fabricating the same | |
Kim et al. | Properties of reactively sputtered nickel oxide films as a microbolometer sensing material | |
Denoual et al. | Capacitively coupled electrical substitution for resistive bolometer enhancement | |
Kim et al. | The bolometric characteristic of thermally oxidized thin nickel film for an uncooled infrared image sensor | |
Akther et al. | Influence of oxygen vacancies on magnetoresistance properties of bulk La 0. 6 7 Ca 0. 3 3 MnO 3-δ |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 09735326 Country of ref document: EP Kind code of ref document: A2 |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 09735326 Country of ref document: EP Kind code of ref document: A2 |