WO2009131674A3 - Bolometric sensor with high tcr and tunable low resistivity - Google Patents
Bolometric sensor with high tcr and tunable low resistivity Download PDFInfo
- Publication number
- WO2009131674A3 WO2009131674A3 PCT/US2009/002484 US2009002484W WO2009131674A3 WO 2009131674 A3 WO2009131674 A3 WO 2009131674A3 US 2009002484 W US2009002484 W US 2009002484W WO 2009131674 A3 WO2009131674 A3 WO 2009131674A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- phase
- operating
- resistivity
- tcr
- nhbs
- Prior art date
Links
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/06—Arrangements for eliminating effects of disturbing radiation; Arrangements for compensating changes in sensitivity
- G01J5/061—Arrangements for eliminating effects of disturbing radiation; Arrangements for compensating changes in sensitivity by controlling the temperature of the apparatus or parts thereof, e.g. using cooling means or thermostats
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/06—Arrangements for eliminating effects of disturbing radiation; Arrangements for compensating changes in sensitivity
- G01J5/064—Ambient temperature sensor; Housing temperature sensor; Constructional details thereof
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
- G01J5/0803—Arrangements for time-dependent attenuation of radiation signals
- G01J5/0804—Shutters
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J2005/0077—Imaging
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Thermistors And Varistors (AREA)
- Radiation Pyrometers (AREA)
Abstract
The present invention provides a novel way of operating sensing elements or bolometers in the resistive hysteresis region of a phase-transitioning VO2 (or doped VO2) films. The invention is based on a novel principle that minor hysteresis loops inside the major loop become single-valued or non-hysteretic for sufficiently small temperature excursions. This single valued R(T) branches being characterized by essentially the same temperature coefficient of resistivity (TCR) as the semiconducting phase at room temperature. These non-hysteretic branches (NHB) can be located close to the metallic-phase end of the major loop, thus providing for tunable resistivity orders of magnitude lower than that of a pure semiconducting phase. Operating the Focal Plan Array in one of these NHBs allows for having high TCR and low resistivity simultaneously. Means for measuring of the sensor R(T) characteristic is provided together with the means of achieving and controlling the correct sensor positioning at the operating temperature inside one of these NHBs.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/924,930 US8158941B2 (en) | 2009-04-21 | 2010-10-08 | Bolometric sensor with high TCR and tunable low resistivity |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12508008P | 2008-04-21 | 2008-04-21 | |
US61/125,080 | 2008-04-21 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/924,930 Continuation US8158941B2 (en) | 2009-04-21 | 2010-10-08 | Bolometric sensor with high TCR and tunable low resistivity |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2009131674A2 WO2009131674A2 (en) | 2009-10-29 |
WO2009131674A3 true WO2009131674A3 (en) | 2011-02-17 |
Family
ID=41217333
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2009/002484 WO2009131674A2 (en) | 2008-04-21 | 2009-04-21 | Bolometric sensor with high tcr and tunable low resistivity |
Country Status (1)
Country | Link |
---|---|
WO (1) | WO2009131674A2 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8871363B2 (en) * | 2009-09-03 | 2014-10-28 | National Institute Of Advanced Industrial Science And Technology | Resistor film for bolometer |
FR3061549B1 (en) * | 2016-12-30 | 2020-10-02 | Commissariat Energie Atomique | ELECTROMAGNETIC RADIATION DETECTOR AND ESPECIALLY INFRARED RADIATION DETECTOR AND PROCESS FOR ITS REALIZATION |
US20240003751A1 (en) * | 2022-07-01 | 2024-01-04 | International Business Machines Corporation | Adjustable transition edge thermometer |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6346703B1 (en) * | 1999-03-27 | 2002-02-12 | Lg Electronics Inc. | Resistive bolometer sensor |
US20030168599A1 (en) * | 2000-07-25 | 2003-09-11 | Kevin Liddiard | Active or self-biasing micro-bolometer infrared detector |
US20070029484A1 (en) * | 1999-10-07 | 2007-02-08 | Infrared Solutions, Inc. | Microbolometer focal plane array with temperature compensated bias |
US20080237467A1 (en) * | 2007-03-27 | 2008-10-02 | Nec Corporation | Bolometer-type thz-wave detector |
-
2009
- 2009-04-21 WO PCT/US2009/002484 patent/WO2009131674A2/en active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6346703B1 (en) * | 1999-03-27 | 2002-02-12 | Lg Electronics Inc. | Resistive bolometer sensor |
US20070029484A1 (en) * | 1999-10-07 | 2007-02-08 | Infrared Solutions, Inc. | Microbolometer focal plane array with temperature compensated bias |
US20030168599A1 (en) * | 2000-07-25 | 2003-09-11 | Kevin Liddiard | Active or self-biasing micro-bolometer infrared detector |
US20080237467A1 (en) * | 2007-03-27 | 2008-10-02 | Nec Corporation | Bolometer-type thz-wave detector |
Also Published As
Publication number | Publication date |
---|---|
WO2009131674A2 (en) | 2009-10-29 |
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