WO2009119172A1

WO2009119172A1 - Surface emitting laser

Info

Publication number: WO2009119172A1
Application number: PCT/JP2009/052335
Authority: WO
Inventors: 健一郎屋敷; 正芳辻; 隆由阿南; 尚文鈴木; 大畠山; 公良深津; 武志赤川
Original assignee: 日本電気株式会社
Priority date: 2008-03-28
Filing date: 2009-02-12
Publication date: 2009-10-01

Abstract

Disclosed is a surface emitting layer comprising a first reflector (102), a second reflector (109) in which a plurality of high-refractive-index layers (124) and a plurality of low-refractive-index layers (123) are alternately arranged, and an active layer (104) and a current-narrowing structure formed between the first reflector (102) and the second reflector (109). The surface emitting layer is characterized in that a light-emitting region (122a) and a peripheral region (122b) around the light-emitting region are made of different materials in at least one layer among the high-refractive-index layers (124) and the low-refractive-index layers (123), and the material constituting the light-emitting region (122a) is smaller in refractive index change due to temperature change than the material constituting the peripheral region (122b).

Description

Surface emitting laser

The present invention relates to a surface emitting laser.

As one of signal light sources in an optical communication network, a surface emitting laser (VCSEL: VerticalVerCavity Surface Emitting Laser) is used. In order to ensure a stable transmission distance, it is necessary to realize a surface emitting laser that emits a laser beam having a wavelength with a loss that is small when transmitting through an optical fiber and having a constant intensity.

Generally, an optical semiconductor element has temperature dependence, and operates stably by using a cooling element such as a Peltier element. However, in order to reduce cost and power consumption, it is necessary to non-temperature-control the element characteristics so as to stably operate without a cooling element.

In Patent Document 1, there is a problem with long-wavelength surface emitting lasers in which the optical gain decreases due to temperature rise and the slope efficiency decreases. In order to solve this, a method has been proposed in which the light output is compensated by changing the reflectance of a distributed Bragg reflector (DBR) with temperature. A material containing Tl is used for the high refractive index layer constituting the upper semiconductor multilayer reflective layer 7 of FIG. 1 of Patent Document 1, and the refractive index difference between the high refractive index layer and the low refractive index layer is reduced as the temperature rises. ing. Thereby, the reflectance of the upper reflecting mirror is reduced as the temperature rises. Therefore, even if the optical gain decreases, it can be compensated by increasing the light output from the upper reflecting mirror.

On the other hand, with an increase in the amount of information transmitted, it is important to increase the speed of the light source for optical communication. The frequency response band of the semiconductor laser, which is a modulation index, can be decomposed into a CR component and a component unique to the semiconductor laser. Since the CR component has negligible temperature dependency, attention should be paid to the semiconductor intrinsic component for the temperature dependency. The semiconductor intrinsic component is a frequency response determined by the interaction between light and electrons. As shown by the equation (2) in Non-Patent Document 1, it is expressed by two indexes of the relaxation oscillation frequency f _R and the damping constant γ, and an increase in f _R is required for speeding up the element. As described in Non-Patent Document 1, the increase in f _R which is effective to reduce the mode volume of the resonator direction using a large take dielectric DBR refractive index difference.

The method of Patent Document 1 is considered to be an effective method for eliminating the need for signal adjustment to an optical element when transmitting a long wavelength band element at a low speed over a long distance. However, since the multilayer reflective layer is made of a semiconductor, the refractive index difference between the high refractive index layer and the low refractive index layer cannot be obtained, and this is not a sufficient method for applying to higher speed optical communication. It was.

In Non-Patent Document 1, SiO2 and Si are used as materials for the dielectric DBR. The temperature dependence of the refractive indexes n (Si) and n (SiO2) of both has a relationship of dn (Si) / dT> dn (SiO2) / dT> 0, and the refractive index difference increases with increasing temperature. As the difference in refractive index widens, the reflectance increases and the light output decreases.

Non-Patent Document 2 reports a DBR using a benzocyclobutene (BCB) and a semiconductor as an example of a dielectric DBR using materials having different temperature dependence of the refractive index. However, since the refractive index of BCB has a negative temperature dependency and the refractive index of a semiconductor has a positive temperature dependency, the refractive index difference has a relationship that increases as the temperature rises. Non-patent document 3 will be described later.
Japanese Patent Laid-Open No. 2004-214311 K. Yashiki and five others, "1.1-μm-Range High-Speed Tunnel Junction Vertical-Cavity Surface-Emitting Lasers", IEEE photonics technology letter, 2007, p. 1883-1885 Yoshikazu Han, et al., "Room-temperature operation of 1.54 μm DBR laser with BCB / semiconductor reflector", Proceedings of the 60th Annual Meeting of the Japan Society of Applied Physics 3a-ZE-41, 1999, p. 980 G. R. Hadley, et al., "Comprehensive numerical modeling of vertical cavity surface emitting lasers", IEEE Journal of Quantum Electronics, 1996, p. 607-616

In view of the above, an object of the present invention is to provide a surface emitting laser that has a stable transmission distance over a wide temperature range and is capable of high-speed modulation without a temperature adjustment mechanism.

The surface emitting laser according to the present invention is
A first reflector;
A second reflecting mirror in which a plurality of high refractive index layers and a plurality of low refractive index layers are alternately laminated;
An active layer and a current confinement structure formed between the first and second reflectors,
In at least one of the plurality of high refractive index layers and the plurality of low refractive index layers, materials constituting the light emitting region and the light emitting peripheral region are different,
The material constituting the light emitting region has a smaller change rate of the refractive index with respect to the temperature than the material constituting the light emitting peripheral region.
Further, the method of manufacturing the surface emitting laser according to the present invention is as follows.
Forming a first reflecting mirror;
Forming a second reflecting mirror in which a plurality of high refractive index layers and a plurality of low refractive index layers are alternately laminated;
Forming an active layer and a current confinement structure positioned between the first and second reflecting mirrors,
In at least one of the plurality of high refractive index layers and the plurality of low refractive index layers, materials constituting the light emitting region and the light emitting peripheral region are different,
The material constituting the light emitting region has a smaller change rate of the refractive index with respect to the temperature than the material constituting the light emitting peripheral region.

According to the present invention, it is possible to provide a surface emitting laser having a stable transmission distance over a wide temperature range and capable of high-speed modulation without a temperature adjustment mechanism.

It is sectional drawing of the surface emitting laser element which concerns on embodiment of this invention. It is sectional drawing which shows the manufacturing method of the surface emitting laser element which concerns on embodiment of this invention. It is sectional drawing which shows the manufacturing method of the surface emitting laser element which concerns on embodiment of this invention. It is sectional drawing which shows the manufacturing method of the surface emitting laser element which concerns on embodiment of this invention. It is sectional drawing which shows the manufacturing method of the surface emitting laser element which concerns on embodiment of this invention. 6 is a graph showing the temperature dependence of the non-refractive difference of the effective refractive index inside and outside the light emitting aperture of the surface emitting laser according to Example 1. 3 is a graph showing temperature dependence of optical input power of the surface emitting laser according to Example 1.

Explanation of symbols

101 Semiconductor substrate 102 First reflector 103 First n-type spacer layer 104 Active layer 105 P-type spacer layer 106 High-concentration p-type layer 107 High-concentration n-type layer 108 Second n-type spacer layer 109 Second reflection Mirror 110 p-side electrode 111 n-side electrode 112 resonator length 113 first refractive index region 114 second refractive index region 121 resonator region 122 refractive index control layer 122a light emitting region layer 122b light emitting peripheral region layer 123 low refractive index layer 124 High refractive index layer

First, the principle of the present invention will be described. According to the relational expression (24) shown in Non-Patent Document 4, the transverse mode characteristic of the surface emitting laser can be described using the in-plane distribution of the effective refractive index as a parameter. When the resonant wavelength and effective refractive index of the light emitting aperture internal resonator are λo and neff, respectively, and the resonant wavelength and effective refractive index outside the aperture are λ1 and n1, respectively, and Δλ = λo−λ1 and Δneff = neff−n1 (1) is established.
Δneff / neff = Δλ / λo (1)
From this relational expression, if the difference in resonance wavelength between the inner region (inner region) and the outer region (outer region) of the light emitting aperture changes with temperature, the difference in refractive index changes. Along with this, the optical confinement changes and the radiation angle can be changed. If the radiation angle changes with temperature, the coupling efficiency with the optical waveguide also changes with temperature. Since the slope efficiency of the optical element decreases with increasing temperature, if the radiation angle decreases with increasing temperature, the coupling efficiency with the optical waveguide is improved, and the light intensity entering the optical waveguide can be compensated.

Hereinafter, embodiments to which the present invention is applied will be described in detail with reference to the drawings. However, the present invention is not limited to the following embodiment. In addition, for clarity of explanation, the following description and drawings are simplified as appropriate.

FIG. 1 is a cross-sectional view of a surface emitting laser element according to an embodiment of the present invention. This surface-emitting laser includes a first reflecting mirror 102 made of a multilayer reflecting film, a second reflecting mirror 109 made of a multilayer reflecting film, and an active layer 104 formed between both reflecting mirrors on an n-type semiconductor substrate 101. The resonator region 121 includes the p-side electrode 110 and the n-side electrode 111.

Here, the resonator region 121 forms a first n-type spacer layer 103, an active layer 104, a p-type spacer layer 105, a high-concentration p-type layer 106 that forms a tunnel junction having a current confinement structure, and a tunnel junction. The high-concentration n-type layer 107 and the second n-type spacer layer 108 are included.

The multilayer reflective film of the second reflecting mirror 109 is composed of a low refractive index layer 123 and a high refractive index layer 124. In addition, in at least one of the plurality of high refractive index layers 124 and low refractive index layers 123 formed in plurality, the materials constituting the light emitting region and the light emitting peripheral region are different. This layer is called a refractive index control layer 122. In the present embodiment, the low refractive index layer 123 closest to the active layer is the refractive index control layer 122.

In the refractive index control layer 122, the refractive indexes of the light emitting region layer 122a and the light emitting peripheral region layer 122b on the tunnel junction having a current confinement structure are denoted by na and nb, respectively. Then, when those temperature dependencies are dna / dT and dnb / dT, the following equation (2) is established.
dna / dT <dnb / dT (2)
The film thickness of the refractive index control layer 122 is the sum of the thickness d1 that affects the resonance wavelength when the temperature is fixed and the thickness d2 that does not affect the resonance wavelength when the temperature is fixed. Here, d2 = mλ / 2 (m is an integer of 0 or more). The temperature dependency can be increased by increasing d2. d1 is based on λ / 4, but may be different from λ / 4 in order to adjust the resonance wavelength in the light emitting region and the light emitting peripheral region. Each layer other than the refractive index control layer 122 constituting the second reflecting mirror 109 is formed with a λ / 4 thickness. In order to obtain the effect of the present invention, m is preferably 1 to 3. When m is 4 or more, the increase of the mode volume becomes remarkable and the modulation band is deteriorated.

Here, a region having a tunnel junction that becomes a current injection region to the active layer 104 serving as a light emitting portion is referred to as a first refractive index region 113, and a region around the light emitting portion is referred to as a second refractive index region 114. The effective refractive indexes of the first refractive index region 113 and the second refractive index region 114 are neff1 and neff2, respectively, and the resonance wavelengths are λ1 and λ2. At the lowest temperature To in the operating temperature range, the effective refractive indices are neff1o and neff2o, and the resonance wavelengths are λ1o and λ2o, respectively.
At this time, the following equations (3) and (4) hold.
λ1o> λ2o (3)
neff1o> neff2o (4)

The following equations (5) and (6) are established for the temperature.
neff1 = neff1o + (T−To) × dneff1 / dT (5)
neff2 = neff2o + (T−To) × dneff2 / dT (6)

Here, dneff1 / dT and dneff2 / dT are the temperature dependence of the effective refractive index, and the following equation (7) is established.
dneff1 / dT <dneff2 / dT (7)
dneff1 / dT and dneff2 / dT are determined by the temperature dependence values dna / dT and dnb / dT of the light emitting region layer 122a and the light emitting peripheral region layer 122b, and the thickness of the refractive index control layer 122. The temperature dependence of the effective refractive index also depends on the positional relationship between the standing wave intensity distribution and the refractive index control layer 122. If the refractive index control layer 122 is disposed at a position where the standing wave intensity is strong, the temperature dependence of the effective refractive index. The difference between can be increased. The reference refractive index difference neff1−neff2o is determined by the resonator structure sandwiched between the first reflecting mirror and the second reflecting mirror including the current confinement structure and the structure of the reflecting mirror.

Here, the current confinement structure that becomes the light emitting aperture is a buried tunnel junction structure. However, as an alternative, a pnp buried structure or an oxidized constriction structure may be adopted. When the oxide constriction structure is employed, the oxide confinement structure is preferably disposed between the substrate-side first reflecting mirror and the active layer. This is because the intensity of the standing wave generated inside the surface emitting laser becomes weaker as the distance from the active layer increases.

As the refractive index control layer 122 of the low refractive index material, BCB, methyl methacrylate resin (PMMA: polymethylmethacrylate), etc. can be considered in the light emitting region layer 122a. Further, in the light emitting peripheral region layer 122b, SiO ₂ , SiN _x , MgO, CaF ₂ , MgF ₂ , and Al ₂ O ₃ can be considered. As the other refractive index control layer 122, a semiconductor layer containing Tl or Bi in the light emitting region layer 122a and a semiconductor layer not containing Tl or Bi in the light emitting peripheral region layer 122b can be considered. As the high refractive index layer 124 containing Bi or Tl, GaInAsBi, TlGaInAsP, or the like can be considered. As the low refractive index layer 123 containing Bi or Tl, AlInAsBi, TlAlInAsP, or the like can be considered. Further, the in-plane temperature dependence may be changed by the concentration gradient of Bi or Tl.

Next, the manufacturing method of the first embodiment will be described with reference to FIGS. 2A to 2D. First, as shown in FIG. 2A, on the n-type semiconductor substrate 101, a semiconductor layer from the first reflecting mirror 102 to the high-concentration n-type layer 107 forming a tunnel junction is grown by MOVPE (Metal Organic Vapor Phase Epitaxy). . Then, after resist patterning by photolithography, a tunnel junction is processed by etching. The reference refractive index difference neff1−neff2o is adjusted in this step.

Next, as shown in FIG. 2B, a second n-type spacer layer 108 is buried and grown. As shown in FIG. 2C, in the second refractive index region 114, the light emitting peripheral region layer 122b having a large temperature dependency of the refractive index is formed in the refractive index control layer 122, and the first refractive index is obtained using a photolithography technique. The region 113 is removed by etching. Thereafter, a light emitting region layer 122a having a small refractive index temperature dependency is formed in the refractive index control layer 122, and is formed so as to remain only on the first refractive index region 113.

Thereafter, another layer of the second reflecting mirror 109 is formed on the entire surface, and the second n-type spacer layer 108 is exposed by dry etching the second reflecting mirror 109 as shown in FIG. 2D. The second reflecting mirror 109 is made of a semiconductor or a dielectric. Then, the p-side electrode 110 and the n-side electrode 111 are formed, and electrode alloying is performed. Thus, the surface emitting laser element according to the embodiment is completed. The reference refractive index difference neff1−neff2o is adjusted by the tunnel junction etching process and the embedding process thereafter. Furthermore, it is possible to adjust the refractive index control layer by shifting the thickness of the refractive index control layer from λ / 4 + mλ / 2 by a small amount at the upper part of the tunnel junction and its periphery.

The second reflecting mirror 109 is formed by sputtering such as RF sputtering or reactive sputtering, electron beam evaporation, CVD (Chemical Vapor Deposition), ion beam assisted deposition, MOVPE, molecular beam epitaxy. A method such as a method (MBE: Molecular Beam Etaxy) may be used. In addition, when it is difficult to etch the material forming the second reflective film 109, a lift-off process may be used. In the case of using the lift-off process, electron beam evaporation, ion beam assisted deposition, MBE, or the like is used for film formation.

In the second reflecting mirror 109, the material constituting the high refractive index layer 124 that is not the refractive index control layer 122 includes Si, Sb ₂ S ₃ , ZnSe, CdS, ZnS, TiO ₂ , GaAs, AlGaAs having a small Al composition, Examples thereof include AlGaAs (Sb) having a small Al composition and AlGalnAsP having a small Al composition. In the second reflecting mirror 109, the material constituting the low refractive index layer 123 that is not the refractive index control layer 122 is AlGaAs, AlGaAs (Sb), AlGalnAsP, SiO ₂ , SiN _x , MgO, CaF ₂ , MgF _2. Al ₂ O ₃ can be mentioned.

The active layer 104 includes an InGaAs quantum well, an AlGaAs quantum well, an InGaAlP quantum well, a GalnNAs (Sb) quantum well, a GalnNAs quantum well, a GaAs (Sb) quantum well, a (Ga) lnAs quantum dot, and the like. Various semiconductor materials can be used. Furthermore, the present embodiment can be applied to surface emitting laser elements having wavelengths of 780 nm, 850 nm, 980 nm, 1100 nm, 1200 nm, 1300 nm, 1480 nm, 1550 nm, and 1650 nm.

In addition to the AIGaAs semiconductor multilayer mirror on the GaAs substrate, the AIGaAs (Sb) semiconductor multilayer mirror and the AlGalnAsP semiconductor multilayer reflector on the lnP substrate are also used as the first reflector 102. It can be applied to the invention. As the semiconductor substrate 101, a GaAs substrate, an lnP substrate, a GalnAs ternary substrate, or the like can be used.

In addition, instead of forming the first reflecting mirror 102 on the semiconductor substrate 101, a layer higher than the first n-type spacer layer 103 is formed first, and the semiconductor substrate 101 is removed by etching. It is also possible to form the first reflecting mirror 102 at a certain place.

In addition, although an n-type semiconductor substrate is used as the semiconductor substrate 101, a semi-insulating semiconductor substrate or a p-type semiconductor substrate may be used. When a semi-insulating semiconductor substrate or a p-type semiconductor substrate is used, both the p-side and n-side electrodes may be taken out from the surface side of the semiconductor substrate 101. Here, a back-emitting surface-emitting laser structure is shown, but the present invention can also be applied to a surface-emitting surface-emitting laser.

Next, a specific example 1 of the surface emitting laser according to the present invention will be described with reference to FIG. 1 and FIGS. 2A to 2D. The oscillation wavelength λ is 1.55 μm. As shown in FIG. 1, an Si-doped (concentration 8 × 10 ¹⁷ cm ⁻³ ) InAlAs low refractive index layer having an optical thickness of λ / 4 and an optical thickness of λ / 4 are formed on an n-type InP semiconductor substrate 101. A first reflecting mirror 102 having a multilayer structure of 34.5 sets, in which a Si-doped (concentration 8 × 10 ¹⁷ cm ⁻³ ) In _0.53 Ga _0.37 Al _0.1 As high refractive index layer is formed, is formed. Has been.

On top of this, a first n-type spacer layer 103 made of Si-doped (concentration 8 × 10 ¹⁷ cm ⁻³ ) InAlAs, five quantum wells (InGaAlAs 1.6% compressive strain well layer / InGaAlAs 0.4% tensile strain barrier) Active layer 104 composed of a layer), p-type spacer layer 105 made of C-doped (concentration 8 × 10 ¹⁷ cm ⁻³ ) InAlAs, Zn-doped (concentration 1 × 10 ²⁰ cm ⁻³ ) InGaAlAs forming a tunnel junction A high-concentration p-type layer 106, a Si-doped (concentration 2 × 10 ¹⁹ cm ⁻³ ) InGaAs high-concentration n-type layer 107 forming a tunnel junction, and a second Si-doped InP (concentration 1 × 10 ¹⁷ cm ⁻³ ). The n-type spacer layer 108 and the second reflecting mirror 109 having a multilayer structure are formed.

The thickness of each of the high-concentration p-type layer 106 and the high-concentration n-type layer 107 constituting the tunnel junction is 16 nm. The unevenness at the interface between the resonator region 121 and the second reflecting mirror 109 is 5 nm, and the first refractive index region 113 is higher than the second refractive index region 114.

The second reflecting mirror 109 includes four sets of multilayer structures, each of which includes a high refractive index layer 124 and a low refractive index layer 123. All the high refractive index layers 124 are made of Si having an optical film thickness λ / 4. Of the low refractive index layer 123, the layer closest to the active layer 104 is a refractive index control layer 122 composed of a light emitting region layer 122a made of BCB having an optical thickness of 3λ / 4 and a light emitting peripheral region layer 122b made of SiO _2. It is. The other three low refractive index layers 123 are made of SiO _{2 with} an optical film thickness λ / 4. The length from the bottom surface of the first n-type spacer layer 103 to the top surface of the second n-type spacer layer 108 via the tunnel junction is an optical film thickness of 1.5λ. The active layer 104 is disposed at the antinode position of the standing wave, and the tunnel junction is disposed at the node of the standing wave.

Furthermore, a p-side electrode 110 made of Au / Ge / Ni is formed on the second n-type spacer layer 108. An n-side electrode 111 made of Au / Ge / Ni is formed on the back surface of the n-type GaAs semiconductor substrate 101.

Next, with reference to FIGS. 2A to 2D, a method for manufacturing the surface emitting laser element according to the first embodiment will be described. First, as shown in FIG. 2A, a semiconductor layer from the first reflecting mirror 102 to the high-concentration n-type layer 107 that forms a tunnel junction is grown on the n-type semiconductor substrate 101 by MOVPE. Then, after resist patterning by photolithography, tunnel junctions were processed by etching. The etching depth at the time of tunnel junction processing is 20 nm.

Next, as shown in FIG. 2B, buried growth is performed with a second n-type spacer layer 108 of 365 nm. The level difference generated in the tunnel junction processing by the control of the growth conditions was flattened to 5 nm. As shown in FIG. 2C, the light emitting peripheral region layer 122 b having a large temperature dependency of the refractive index in the refractive index control layer 122 is formed in the second refractive index region 114. Then, the top of the first refractive index region 113 is removed by etching using a photolithography technique. Thereafter, a light emitting region layer 122a having a small refractive index temperature dependency is formed in the refractive index control layer 122, and is formed so as to remain only on the first refractive index region 113.

Thereafter, the remaining multilayer reflective film of the second reflecting mirror 109 is formed on the entire surface, and the second n-type spacer layer 108 is exposed by dry etching the second reflecting mirror 109 as shown in FIG. 2D. Then, the p-side electrode 110 and the n-side electrode 111 are formed, and electrode alloying is performed. Thus, the surface emitting laser element according to Example 1 is completed.

FIG. 3 is a graph in which the temperature dependence of the relative refractive index difference of the effective refractive index is calculated. The light emitting region layer 122a of the refractive index control layer 122 is composed of 3λ / 4 thick BCB (refractive index 1.53). The temperature dependence dna / dT of the refractive index na of the BCB material is dna / dT = −1.5 × 10 ⁻⁴ / ° C., and the absolute value is close to the refractive index change of the semiconductor and has a negative temperature dependence. The relative refractive index difference is reduced by 30% or more at 25 ° C to 75 ° C. A smaller relative refractive index difference means that light confinement is weakened.

FIG. 4 is a graph showing the temperature dependence of the coupling efficiency to the optical waveguide, the slope efficiency of the chip output, and the fiber input power of the surface emitting laser element according to Example 1. Although the slope efficiency decreased with increasing temperature, the fiber input power changed to be almost constant with temperature because the radiation angle decreased and the coupling efficiency increased with increasing temperature. As the optical output is stabilized, the transmission distance can be secured stably. Further, by using the dielectric DBR having a large refractive index difference, a relaxation oscillation frequency exceeding 8 GHz can be obtained in a wide temperature range, and an optical communication module with low cost and low power consumption applicable to high-speed operation can be realized.

This application claims priority based on Japanese Patent Application No. 2008-085601 filed on Mar. 28, 2008, the entire disclosure of which is incorporated herein.

The present invention can be applied to a surface emitting laser for which a low cost is required for an ultra high speed computer.

Claims

A first reflector;
A second reflecting mirror in which a plurality of high refractive index layers and a plurality of low refractive index layers are alternately laminated;
An active layer and a current confinement structure formed between the first and second reflectors,
In at least one of the plurality of high refractive index layers and the plurality of low refractive index layers, materials constituting the light emitting region and the light emitting peripheral region are different,
A surface-emitting laser characterized in that a material constituting the light-emitting region has a smaller change rate of refractive index with respect to temperature than a material constituting the light-emitting peripheral region.
2. The surface emitting laser according to claim 1, wherein a refractive index of a material constituting the light emitting region has a negative temperature dependency.
3. The surface emitting laser according to claim 1, wherein the material constituting the light emitting region and the light emitting peripheral region is different in the high refractive index layer and / or the low refractive index layer closest to the active layer. .
The optical film thickness of the layers of different materials constituting the light emitting region and the light emitting peripheral region has a thickness d1 that affects the resonance wavelength difference when the temperature is fixed, and a thickness that does not affect the resonance wavelength when the temperature is fixed. The surface emitting laser according to any one of claims 1 to 3, which is a sum of d2 and d2 = mλ / 2 (m is an integer of 0 or more).
5. The surface emitting laser according to claim 1, wherein the material constituting the light emitting region is PMMA or BCB.
Forming a first reflecting mirror;
Forming a second reflecting mirror in which a plurality of high refractive index layers and a plurality of low refractive index layers are alternately laminated;
Forming an active layer and a current confinement structure positioned between the first and second reflecting mirrors,
In at least one of the plurality of high refractive index layers and the plurality of low refractive index layers, materials constituting the light emitting region and the light emitting peripheral region are different,
A method of manufacturing a surface-emitting laser, wherein the material constituting the light-emitting region has a smaller change rate with respect to temperature than the material constituting the light-emitting peripheral region.