WO2009102112A1 - A manufacturing and heating jacket for pipeline gas refined of semiconductor fabrication - Google Patents
A manufacturing and heating jacket for pipeline gas refined of semiconductor fabrication Download PDFInfo
- Publication number
- WO2009102112A1 WO2009102112A1 PCT/KR2008/007070 KR2008007070W WO2009102112A1 WO 2009102112 A1 WO2009102112 A1 WO 2009102112A1 KR 2008007070 W KR2008007070 W KR 2008007070W WO 2009102112 A1 WO2009102112 A1 WO 2009102112A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- gas
- heating wire
- heat generator
- fep
- thickness
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
- H05B3/26—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base
- H05B3/267—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base the insulating base being an organic material, e.g. plastic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
- B32B15/082—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin comprising vinyl resins; comprising acrylic resins
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B27/08—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/32—Layered products comprising a layer of synthetic resin comprising polyolefins
- B32B27/322—Layered products comprising a layer of synthetic resin comprising polyolefins comprising halogenated polyolefins, e.g. PTFE
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2250/00—Layers arrangement
- B32B2250/40—Symmetrical or sandwich layers, e.g. ABA, ABCBA, ABCCBA
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2260/00—Layered product comprising an impregnated, embedded, or bonded layer wherein the layer comprises an impregnation, embedding, or binder material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/20—Properties of the layers or laminate having particular electrical or magnetic properties, e.g. piezoelectric
- B32B2307/202—Conductive
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
- B32B2457/14—Semiconductor wafers
Definitions
- the present invention relates to a planar heat generator for refining a transferring gas of a gas pipe and attached to a gas purifier of a semiconductor equipment and capable of refining the transferring gas in a high cleaning state and a manufacturing method thereof, and more particularly to a planar heat generator for refining a gas of a gas pipe of a semiconductor equipment and a manufacturing method thereof in that after a FEP (Fluorinated Ethylene Propylene Copolymer) film and a conductive metal sheet of a predetermined thickness is successively laminated on a Teflon sheet of the planar heat generator attached and formed on an outer surface of the gas pipe for transferring the gas, the conductive metal sheet is compressed through the hot-press process at a pressure of 15-30kg/cm and 280-360 0 C for 1-2 minutes and a photoresist pattern is formed at the conductive metal sheet and an unnecessary thin film except for the pattern is etched to form a heating wire pattern and then, another Teflon sheet or
- a gas pipe for semiconductor equipment serves to supply a raw gas of super high purity, which is essentially used in a semiconductor fabrication process, to the desiring working place without deteriorating the purity thereof. Accordingly, a ceramic heater etc. is attached to a gas purifier and the gas pipe is heated, thereby supplying the cleaning gas of super high purity thereto.
- an object of the present invention is to provide a planar heat generator for refining a gas of a gas pipe of a semiconductor equipment and a manufacturing method thereof in that a thin planar heat generator of about lmm in thickness can be manufactured, the planar heat generator can be easily attached to the gas pipe, and an unnecessary thin film except for a photoresist pattern is etched to form a heating wire pattern after the photoresist pattern is formed at a conductive metal sheet, whereby easily manufacturing the planar heat generator through a simple process, protecting the heating wire pattern in safety through the Teflon sheets formed at upper and lower portions of the heating wire pattern and impregnated with a glass fiber therein, performing an insulating operation, and refining the transferring gas in a high cleaning state.
- the present invention provides a method for manufacturing a planar heat generator for refining a gas of a gas pipe and attached to a gas purifier of a semiconductor equipment comprising steps of: successively laminating a first FEP (Fluorinated Ethylene Propylene Copolymer) film and a conductive metal sheet of 30-100 ⁇ m in thickness on a first Teflon sheet of the planar heat generator attached and formed on an outer surface of the gas pipe for transferring the gas; compressing the laminated conductive metal sheet at a pressure of 15-30kg/cm and 280-360 0 C for 1-2 minutes through a hot-press process; forming a photoresist pattern at the conductive metal sheet; forming a heating wire pattern by etching an unnecessary thin film except for the photoresist pattern; laminating again a second FEP (Fluorinated Ethylene Propylene Copolymer) film on an upper portion of the heating wire pattern; and compressing a second Te
- FEP Fluorin
- the present invention provides a planar heat generator for refining a gas of a gas pipe and attached to a gas purifier of a semiconductor equipment comprising: a first Teflon sheet of 100-500 ⁇ m in thickness; a first FEP (Fluorinated Ethylene Propylene Copolymer) film laminated on the first Teflon sheet; a heating wire pattern formed on the first FEP (Fluorinated Ethylene Propylene Copolymer) film by etching a conductive metal sheet of 30-100 ⁇ m in thickness thereon; a second FEP (Fluorinated Ethylene Propylene Copolymer) film laminated on the heating wire pattern; and a second Teflon sheet or a glass fiber impregnated Teflon sheet of 100-500 ⁇ m in thickness laminated on the second FEP (Fluorinated Ethylene Propylene Copolymer) film through a hot-press process.
- the planar heat generator for refining the gas of the gas pipe of the semiconductor equipment and the manufacturing method thereof there are effects in that the thin planar heat generator of about lmm in thickness can be manufactured, the planar heat generator can be easily attached to the gas pipe, and the unnecessary thin film except for the photoresist pattern is etched to form the heating wire pattern after the photoresist pattern is formed at the conductive metal sheet, whereby easily manufacturing the planar heat generator through a simple process, protecting the heating wire pattern in safety through the Teflon sheets formed at the upper and lower portions of the heating wire pattern and impregnated with the glass fiber therein, performing the insulating operation, and refining the transferring gas in a high cleaning state.
- FIG. 1 is a schematic sectional view illustrating a laminating structure of a planar heat generator for refining a transferring gas attached to a gas purifier of a semiconductor equipment according to the present invention. Best Mode for Carrying out the Invention
- FIG. 1 is a schematic sectional view illustrating a laminating structure of a planar heat generator for refining a transferring gas of a gas pipe and attached to a gas purifier of a semiconductor equipment according to the present invention.
- the planar heat generator for refining the transferring gas of the gas pipe and attached to the gas purifier of the semiconductor equipment includes a first Teflon sheet 10 of 100-500 ⁇ m in thickness, a first FEP (Fluorinated Ethylene Propylene Copolymer) film 20 laminated on the first Teflon sheet 10, a heating wire pattern 30 formed on the first FEP (Fluorinated Ethylene Propylene Copolymer) film 20 by etching a conductive metal sheet of 30-100 ⁇ m in thickness thereon, a second FEP (Fluorinated Ethylene Propylene Copolymer) film 20 laminated on the heating wire pattern 30, and a second Teflon sheet 40 or a glass fiber impregnated Teflon sheet of 100-500 ⁇ m in thickness laminated on the second FEP (Fluorinated Ethylene Propylene Copolymer) film 20 through a pressing process.
- a first Teflon sheet 10 of 100-500 ⁇ m
- planar heat generator is attached and formed on an outer surface of a gas pipe for transferring the gas.
- the first FEP (Fluorinated Ethylene Propylene Copolymer) film 20 of a thin film type and the conductive metal sheet of 30-100 ⁇ m in thickness are laminated on the first Teflon sheet 10 of 100-500 ⁇ m in thickness in regular sequence.
- the first Teflon sheet 10 is impregnated with the glass fiber therein, so that it can improve a R- value, incombustibility, a humidity resistance, and a durability.
- the thickness of the first Teflon sheet 10 is below lOO ⁇ m, it can easily be exfoliated during hot-press process thereof. Meanwhile, in case that the thickness of the first Teflon sheet 10 is above 500 ⁇ m, since the heat of about 25O 0 C is not properly transferred to the gas pipe through the heating wire pattern 30, there is a problem in that it cannot properly heat the transferring gas located inside the gas pipe. Accordingly, it is preferred that the first Teflon sheet 10 is 100-500 ⁇ m in thickness.
- the first FEP (Fluorinated Ethylene Propylene Copolymer) film 20 laminated on the first Teflon sheet 10 of 100-500 ⁇ m has a superior humidity resistance. Also, it serves to protect the first Teflon sheet 10 at 250-300 0 C.
- the heating wire pattern 30 is not properly formed owing to thin or thick thickness thereof during etching process thereof.
- a second Teflon sheet 40 or a glass fiber impregnated Teflon sheet of 100-500 ⁇ m in thickness is compressed through the hot-press process at a pressure of 15-30kg/cm and 280-360 0 C for 1-2 minutes, so that it can protect the heating wire pattern 30 in safety and perform the insulating operation, thereby refining the transferring gas in a high cleaning state.
- the present invention relates to a planar heat generator for refining a transferring gas of a gas pipe attached to a gas purifier of a semiconductor equipment and capable of refining the transferring gas in a high cleaning state and a manufacturing method thereof. Also, a thin planar heat generator of about lmm in thickness can be manufactured and the planar heat generator can be easily attached to the gas pipe.
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Resistance Heating (AREA)
- Surface Heating Bodies (AREA)
Abstract
Disclosed is a planar heat generator for refining a gas of a gas pipe of a semiconductor equipment and a manufacturing method thereof in that a thin planar heat generator of about lmm in thickness can be manufactured, the planar heat generator can be easily attached to the gas pipe, and an unnecessary thin film except for a photoresist pattern is etched to form a heating wire pattern after the photoresist pattern is formed at a conductive metal sheet, whereby easily manufacturing the planar heat generator through a simple process, protecting the heating wire pattern in safety through the Teflon sheets formed at upper and lower portions of the heating wire pattern and impregnated with a glass fiber therein, performing an insulating operation, and refining the transferring gas in a high cleaning state.
Description
Description
A MANUFACTURING AND HEATING JACKET FOR PIPELINE GAS REFINED OF SEMICONDUCTOR FABRICATION
Technical Field
[1] The present invention relates to a planar heat generator for refining a transferring gas of a gas pipe and attached to a gas purifier of a semiconductor equipment and capable of refining the transferring gas in a high cleaning state and a manufacturing method thereof, and more particularly to a planar heat generator for refining a gas of a gas pipe of a semiconductor equipment and a manufacturing method thereof in that after a FEP (Fluorinated Ethylene Propylene Copolymer) film and a conductive metal sheet of a predetermined thickness is successively laminated on a Teflon sheet of the planar heat generator attached and formed on an outer surface of the gas pipe for transferring the gas, the conductive metal sheet is compressed through the hot-press process at a pressure of 15-30kg/cm and 280-3600C for 1-2 minutes and a photoresist pattern is formed at the conductive metal sheet and an unnecessary thin film except for the pattern is etched to form a heating wire pattern and then, another Teflon sheet or a glass fiber impregnated Teflon sheet of a predetermined thickness is compressed on an upper portion of the heating wire pattern through the hot-press process by interposing another FEP (Fluorinated Ethylene Propylene Copolymer) film between them, so that it can easily manufacture a thin planar heat generator of about lmm in thickness, whereby easily attaching it to the gas pipe, protecting the heating wire pattern in safety through the Teflon sheets formed at upper and lower portions of the heating wire pattern and impregnated with a glass fiber therein, performing an insulating operation, and refining the transferring gas in a high cleaning state. Background Art
[2] Generally, a gas pipe for semiconductor equipment serves to supply a raw gas of super high purity, which is essentially used in a semiconductor fabrication process, to the desiring working place without deteriorating the purity thereof. Accordingly, a ceramic heater etc. is attached to a gas purifier and the gas pipe is heated, thereby supplying the cleaning gas of super high purity thereto.
[3] However, in the conventional heater for purifying the gas, since a heating wire is molded by a ceramic and then, the molded heating wire is fixed inside a metal case during manufacturing of a jacket type heater, the volume and weight thereof become larger, thereby it has a difficulty in forming the ceramic heater at the outer surface of the gas purifier and can increase the manufacturing cost thereof. Disclosure of Invention
Technical Problem
[4] Accordingly, the present invention has been made to solve the above-mentioned problems occurring in the prior art, and an object of the present invention is to provide a planar heat generator for refining a gas of a gas pipe of a semiconductor equipment and a manufacturing method thereof in that a thin planar heat generator of about lmm in thickness can be manufactured, the planar heat generator can be easily attached to the gas pipe, and an unnecessary thin film except for a photoresist pattern is etched to form a heating wire pattern after the photoresist pattern is formed at a conductive metal sheet, whereby easily manufacturing the planar heat generator through a simple process, protecting the heating wire pattern in safety through the Teflon sheets formed at upper and lower portions of the heating wire pattern and impregnated with a glass fiber therein, performing an insulating operation, and refining the transferring gas in a high cleaning state. Technical Solution
[5] To accomplish the objects, the present invention provides a method for manufacturing a planar heat generator for refining a gas of a gas pipe and attached to a gas purifier of a semiconductor equipment comprising steps of: successively laminating a first FEP (Fluorinated Ethylene Propylene Copolymer) film and a conductive metal sheet of 30-100μm in thickness on a first Teflon sheet of the planar heat generator attached and formed on an outer surface of the gas pipe for transferring the gas; compressing the laminated conductive metal sheet at a pressure of 15-30kg/cm and 280-3600C for 1-2 minutes through a hot-press process; forming a photoresist pattern at the conductive metal sheet; forming a heating wire pattern by etching an unnecessary thin film except for the photoresist pattern; laminating again a second FEP (Fluorinated Ethylene Propylene Copolymer) film on an upper portion of the heating wire pattern; and compressing a second Teflon sheet or a glass fiber impregnated Teflon sheet of 100-500μm in thickness at a pressure of 15-30kg/cm and 280-3600C for 1-2 minutes through the hot-press process.
[6] To accomplish the objects, the present invention provides a planar heat generator for refining a gas of a gas pipe and attached to a gas purifier of a semiconductor equipment comprising: a first Teflon sheet of 100-500μm in thickness; a first FEP (Fluorinated Ethylene Propylene Copolymer) film laminated on the first Teflon sheet; a heating wire pattern formed on the first FEP (Fluorinated Ethylene Propylene Copolymer) film by etching a conductive metal sheet of 30-100μm in thickness thereon; a second FEP (Fluorinated Ethylene Propylene Copolymer) film laminated on the heating wire pattern; and a second Teflon sheet or a glass fiber impregnated Teflon sheet of 100-500μm in thickness laminated on the second FEP (Fluorinated Ethylene Propylene
Copolymer) film through a hot-press process.
Advantageous Effects
[7] In the planar heat generator for refining the gas of the gas pipe of the semiconductor equipment and the manufacturing method thereof, there are effects in that the thin planar heat generator of about lmm in thickness can be manufactured, the planar heat generator can be easily attached to the gas pipe, and the unnecessary thin film except for the photoresist pattern is etched to form the heating wire pattern after the photoresist pattern is formed at the conductive metal sheet, whereby easily manufacturing the planar heat generator through a simple process, protecting the heating wire pattern in safety through the Teflon sheets formed at the upper and lower portions of the heating wire pattern and impregnated with the glass fiber therein, performing the insulating operation, and refining the transferring gas in a high cleaning state. Brief Description of Drawings
[8] The above as well as the other objects, features and advantages of the present invention will be more apparent from the following detailed description taken in conjunction with the accompanying drawings, in which:
[9] FIG. 1 is a schematic sectional view illustrating a laminating structure of a planar heat generator for refining a transferring gas attached to a gas purifier of a semiconductor equipment according to the present invention. Best Mode for Carrying out the Invention
[10] A preferred embodiment of the invention will be described in detail below with reference to the accompanying drawings.
[11] FIG. 1 is a schematic sectional view illustrating a laminating structure of a planar heat generator for refining a transferring gas of a gas pipe and attached to a gas purifier of a semiconductor equipment according to the present invention.
[12] As shown in FIG. 1, the planar heat generator for refining the transferring gas of the gas pipe and attached to the gas purifier of the semiconductor equipment according to the present invention includes a first Teflon sheet 10 of 100-500μm in thickness, a first FEP (Fluorinated Ethylene Propylene Copolymer) film 20 laminated on the first Teflon sheet 10, a heating wire pattern 30 formed on the first FEP (Fluorinated Ethylene Propylene Copolymer) film 20 by etching a conductive metal sheet of 30-100μm in thickness thereon, a second FEP (Fluorinated Ethylene Propylene Copolymer) film 20 laminated on the heating wire pattern 30, and a second Teflon sheet 40 or a glass fiber impregnated Teflon sheet of 100-500μm in thickness laminated on the second FEP (Fluorinated Ethylene Propylene Copolymer) film 20 through a pressing process.
[13] A method for manufacturing the planar heat generator for refining the transferring gas attached to the gas purifier of the semiconductor equipment according to the
present invention will be described in detail below.
[14] Here, the planar heat generator is attached and formed on an outer surface of a gas pipe for transferring the gas.
[15] Firstly, the first FEP (Fluorinated Ethylene Propylene Copolymer) film 20 of a thin film type and the conductive metal sheet of 30-100μm in thickness are laminated on the first Teflon sheet 10 of 100-500μm in thickness in regular sequence.
[16] Here, the first Teflon sheet 10 is impregnated with the glass fiber therein, so that it can improve a R- value, incombustibility, a humidity resistance, and a durability.
[17] Also, where the thickness of the first Teflon sheet 10 is below lOOμm, it can easily be exfoliated during hot-press process thereof. Meanwhile, in case that the thickness of the first Teflon sheet 10 is above 500μm, since the heat of about 25O0C is not properly transferred to the gas pipe through the heating wire pattern 30, there is a problem in that it cannot properly heat the transferring gas located inside the gas pipe. Accordingly, it is preferred that the first Teflon sheet 10 is 100-500μm in thickness.
[18] The first FEP (Fluorinated Ethylene Propylene Copolymer) film 20 laminated on the first Teflon sheet 10 of 100-500μm has a superior humidity resistance. Also, it serves to protect the first Teflon sheet 10 at 250-3000C.
[19] Continuously, after the conductive metal sheet of 30-100μm in thickness is laminated on the first Teflon sheet 10 by interposing the first FEP (Fluorinated Ethylene Propylene Copolymer) film 20 between them, the conductive metal sheet is compressed through the hot-press process at a pressure of 15-30kg/cm and 280-3600C for 1-2 minutes and then, a photoresist pattern is formed at the conductive metal sheet and an unnecessary thin film except for the pattern is etched to form the heating wire pattern 30.
[20] Here, where the thickness of the conductive metal sheet is below 30μm or above lOOμm, the heating wire pattern 30 is not properly formed owing to thin or thick thickness thereof during etching process thereof.
[21] Also, when the conductive metal sheet is compressed through the hot-press process at 280-3600C (above the heating temperature of 250°) for 1-2 minutes, in case that the process time thereof is below 1 minute, since the conductive metal sheet is not properly compressed on the first Teflon sheet 10 and the first FEP (Fluorinated Eth ylene Propylene Copolymer) film 20, it can bring about an exfoliation phenomenon thereof. Moreover, in case that the process time thereof is above 2 minutes, since the conductive metal sheet is impregnated inside the first Teflon sheet 10 and the first FEP (Fluorinated Ethylene Propylene Copolymer) film 20, the etching process cannot be properly performed.
[22] In the meantime, the second FEP (Fluorinated Ethylene Propylene Copolymer) film
20 is again laminated on the upper portion of the heating wire pattern 30 and a second
Teflon sheet 40 or a glass fiber impregnated Teflon sheet of 100-500μm in thickness is compressed through the hot-press process at a pressure of 15-30kg/cm and 280-3600C for 1-2 minutes, so that it can protect the heating wire pattern 30 in safety and perform the insulating operation, thereby refining the transferring gas in a high cleaning state.
[23] While this invention has been described in connection with what are presently considered to be the most practical and preferred embodiments, it is to be understood that the invention is not limited to the disclosed embodiments and the drawings, but, on the contrary, it is intended to cover various modifications and variations within the spirit and scope of the appended claims. Industrial Applicability
[24] The present invention relates to a planar heat generator for refining a transferring gas of a gas pipe attached to a gas purifier of a semiconductor equipment and capable of refining the transferring gas in a high cleaning state and a manufacturing method thereof. Also, a thin planar heat generator of about lmm in thickness can be manufactured and the planar heat generator can be easily attached to the gas pipe.
Claims
Claims
[1] A method for manufacturing a planar heat generator for refining a gas of a gas pipe and attached to a gas purifier of a semiconductor equipment comprising steps of: successively laminating a first FEP (Fluorinated Ethylene Propylene Copolymer) film and a conductive metal sheet of 30-100μm in thickness on a first Teflon sheet of a heat generator attached and formed on an outer surface of the gas pipe for transferring the gas; compressing the laminated conductive metal sheet at a pressure of 15-30kg/cm and 280-3600C for 1-2 minutes through a hot-press process; forming a photoresist pattern at the conductive metal sheet; forming a heating wire pattern by etching an unnecessary thin film except for the photoresist pattern; laminating again a second FEP (Fluorinated Ethylene Propylene Copolymer) film on an upper portion of the heating wire pattern; and compressing a second Teflon sheet of 100-500μm in thickness at a pressure of
15-30kg/cm and 280-3600C for 1-2 minutes through the hot-press process. [2] A method as claimed in claim 1, wherein the Teflon sheets is impregnated with a glass fiber therein. [3] A planar heat generator for refining a gas of a gas pipe and attached to a gas purifier of a semiconductor equipment comprising: a first Teflon sheet of 100-500μm in thickness; a first FEP (Fluorinated Ethylene Propylene Copolymer) film laminated on the first Teflon sheet; a heating wire pattern formed on the first FEP (Fluorinated Ethylene Propylene
Copolymer) film by etching a conductive metal sheet of 30-100μm in thickness thereon; a second FEP (Fluorinated Ethylene Propylene Copolymer) film laminated on the heating wire pattern; and a second Teflon sheet or a glass fiber impregnated Teflon sheet of 100-500μm in thickness laminated on the second FEP (Fluorinated Ethylene Propylene
Copolymer) film through a hot-press process.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2008-0014180 | 2008-02-15 | ||
| KR1020080014180A KR100972679B1 (en) | 2008-02-15 | 2008-02-15 | A manufacturing and heating jacket for pipeline gas refined of semiconductor fabrication |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2009102112A1 true WO2009102112A1 (en) | 2009-08-20 |
Family
ID=40957130
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/KR2008/007070 WO2009102112A1 (en) | 2008-02-15 | 2008-11-28 | A manufacturing and heating jacket for pipeline gas refined of semiconductor fabrication |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR100972679B1 (en) |
| WO (1) | WO2009102112A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110794649A (en) * | 2019-11-12 | 2020-02-14 | 上海交通大学 | Glass fiber-based enhanced photoresist structure and manufacturing method thereof |
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| KR20050031904A (en) * | 2003-09-30 | 2005-04-06 | 니찌아스 카부시키카이샤 | Heat insulating structure of piping and heat insulating tool kit |
| KR20050084503A (en) * | 2002-12-27 | 2005-08-26 | 마이코루 프로다쿠쓰 가부시키가이샤 | Exothermic composition and exothermic element |
| KR20070024806A (en) * | 2005-08-30 | 2007-03-08 | 삼성전자주식회사 | Heating jacket |
| KR20070121773A (en) * | 2005-04-19 | 2007-12-27 | 데이진 가부시키가이샤 | Carbon fiber composite sheet, use of the same as heat transferring article, and sheet for pitch-based carbon fiber mat for use therein |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100749886B1 (en) * | 2006-02-03 | 2007-08-21 | (주) 나노텍 | Heating element using Carbon Nano tube |
| KR100758136B1 (en) * | 2006-11-07 | 2007-09-12 | 두원공과대학산학협력단 | Flat type heater and method for manufacturing thereof |
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2008
- 2008-02-15 KR KR1020080014180A patent/KR100972679B1/en active IP Right Grant
- 2008-11-28 WO PCT/KR2008/007070 patent/WO2009102112A1/en active Application Filing
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20050084503A (en) * | 2002-12-27 | 2005-08-26 | 마이코루 프로다쿠쓰 가부시키가이샤 | Exothermic composition and exothermic element |
| KR20050031904A (en) * | 2003-09-30 | 2005-04-06 | 니찌아스 카부시키카이샤 | Heat insulating structure of piping and heat insulating tool kit |
| KR20070121773A (en) * | 2005-04-19 | 2007-12-27 | 데이진 가부시키가이샤 | Carbon fiber composite sheet, use of the same as heat transferring article, and sheet for pitch-based carbon fiber mat for use therein |
| KR20070024806A (en) * | 2005-08-30 | 2007-03-08 | 삼성전자주식회사 | Heating jacket |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110794649A (en) * | 2019-11-12 | 2020-02-14 | 上海交通大学 | Glass fiber-based enhanced photoresist structure and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| KR100972679B1 (en) | 2010-07-27 |
| KR20090088727A (en) | 2009-08-20 |
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