WO2009101474A3 - Semiconductor device and method for manufacturing the same - Google Patents

Semiconductor device and method for manufacturing the same Download PDF

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Publication number
WO2009101474A3
WO2009101474A3 PCT/IB2008/003915 IB2008003915W WO2009101474A3 WO 2009101474 A3 WO2009101474 A3 WO 2009101474A3 IB 2008003915 W IB2008003915 W IB 2008003915W WO 2009101474 A3 WO2009101474 A3 WO 2009101474A3
Authority
WO
Grant status
Application
Patent type
Prior art keywords
manufacturing
method
semiconductor device
film
same
Prior art date
Application number
PCT/IB2008/003915
Other languages
French (fr)
Other versions
WO2009101474A2 (en )
Inventor
Yasuo Kobayashi
Takehisa Saito
Original Assignee
Tokyo Electron Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

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Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers
    • H01L21/314Inorganic layers
    • H01L21/3146Carbon layers, e.g. diamond-like layers
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers
    • H01L21/314Inorganic layers
    • H01L21/3148Silicon Carbide layers
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76829Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H01L21/76832Multiple layers

Abstract

A method for manufacturing a semiconductor device pertaining to the present invention includes the steps of forming a first film containing fluorine added carbon on a semiconductor substrate, forming a second film containing a carbon-carbon bond on the first film, and forming a third film on the second film.
PCT/IB2008/003915 2007-11-27 2008-11-26 Semiconductor device and method for manufacturing the same WO2009101474A3 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US453907 true 2007-11-27 2007-11-27
US61/004,539 2007-11-27

Publications (2)

Publication Number Publication Date
WO2009101474A2 true WO2009101474A2 (en) 2009-08-20
WO2009101474A3 true true WO2009101474A3 (en) 2009-10-08

Family

ID=40957320

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2008/003915 WO2009101474A3 (en) 2007-11-27 2008-11-26 Semiconductor device and method for manufacturing the same

Country Status (1)

Country Link
WO (1) WO2009101474A3 (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000021124A1 (en) * 1998-10-05 2000-04-13 Tokyo Electron Limited Semiconductor device and method for manufacturing the same
WO2001080309A2 (en) * 2000-04-03 2001-10-25 Sharp Kabushiki Kaisha A method to enhance the adhesion of silicon nitride to low-k fluorinated amorphous carbon using a silicon carbide adhesion promoter layer
WO2005069367A1 (en) * 2004-01-13 2005-07-28 Tokyo Electron Limited Method for manufacturing semiconductor device and film-forming system
JP2009117519A (en) * 2007-11-05 2009-05-28 Fujitsu Ltd Interlayer insulating film structure of semiconductor device and manufacturing method thereof, and semiconductor device and manufacturing method thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000021124A1 (en) * 1998-10-05 2000-04-13 Tokyo Electron Limited Semiconductor device and method for manufacturing the same
WO2001080309A2 (en) * 2000-04-03 2001-10-25 Sharp Kabushiki Kaisha A method to enhance the adhesion of silicon nitride to low-k fluorinated amorphous carbon using a silicon carbide adhesion promoter layer
WO2005069367A1 (en) * 2004-01-13 2005-07-28 Tokyo Electron Limited Method for manufacturing semiconductor device and film-forming system
JP2009117519A (en) * 2007-11-05 2009-05-28 Fujitsu Ltd Interlayer insulating film structure of semiconductor device and manufacturing method thereof, and semiconductor device and manufacturing method thereof

Also Published As

Publication number Publication date Type
WO2009101474A2 (en) 2009-08-20 application

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