WO2009096954A1 - Système et procédé pour sources d'espèces de plasma par micro-ondes - Google Patents

Système et procédé pour sources d'espèces de plasma par micro-ondes Download PDF

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Publication number
WO2009096954A1
WO2009096954A1 PCT/US2008/052383 US2008052383W WO2009096954A1 WO 2009096954 A1 WO2009096954 A1 WO 2009096954A1 US 2008052383 W US2008052383 W US 2008052383W WO 2009096954 A1 WO2009096954 A1 WO 2009096954A1
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WO
WIPO (PCT)
Prior art keywords
plasma
plasma species
antenna
substrate
extraction grid
Prior art date
Application number
PCT/US2008/052383
Other languages
English (en)
Inventor
Michael W. Stowell
Original Assignee
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Priority to PCT/US2008/052383 priority Critical patent/WO2009096954A1/fr
Publication of WO2009096954A1 publication Critical patent/WO2009096954A1/fr
Priority to US12/833,571 priority patent/US20110097517A1/en
Priority to US12/833,524 priority patent/US20110076422A1/en
Priority to US12/833,473 priority patent/US20110076420A1/en
Priority to PCT/US2010/041585 priority patent/WO2011006109A2/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

Definitions

  • TITLE SYSTEM AND METHOD FOR MICROWAVE PLASMA SPECIES SOURCE
  • the present invention relates to a system and method for producing electrons, ions and radicalized atoms and molecules for surface treatment and film chemistry, and film structure, formation and alteration.
  • PECVD Plasma enhanced chemical vapor deposition
  • Typical PECVD processes can be controlled by varying process parameters such as gas pressure, power, power pulsing frequency, power duty cycle, pulse shape, and several other parameters.
  • process parameters such as gas pressure, power, power pulsing frequency, power duty cycle, pulse shape, and several other parameters.
  • process parameters such as gas pressure, power, power pulsing frequency, power duty cycle, pulse shape, and several other parameters.
  • the industry is continually searching for new ways to improve the PECVD process and to gain more control over the process.
  • the PECVD industry seeks to utilize PECVD over a wider range of process parameters.
  • PECVD can only be used in a limited set of conditions.
  • alternative deposition processes must be used. These alternative deposition processes, such as electron cyclotron resonance (ECR) and sputtering, are not always optimal for many applications. Accordingly, the industry has been searching for ways to extend the application of PECVD into areas traditionally reserved for these alternative deposition methods.
  • ECR electron cyclotron resonance
  • PECVD microwave plasma sources have generally been a limited or unsuitable source for ions or other plasma species.
  • Ions sources have many beneficial uses related to PECVD processes. For example, ion sources are often used to pretreat surfaces, such as polymer substrates, in preparation for deposition of thin films. Ion sources are also used to change the chemistry and structure of thin films during plasma deposition processes. Additionally, ion sources can be used to remove charge buildup from films or to clean surfaces. Although alternative ion sources can be combined with microwave plasma sources in PECVD, the PECVD process itself has been insufficient as its own ion source.
  • Ion sources are available from a variety of vendors and are known in the art. But these ion sources typically suffer from several drawbacks. One drawback is that linear ion sources are overly expensive and complicated for many uses. In fact, many applications that would benefit from ion sources forego their use because of the high costs. Another drawback is that current ion sources tend to produce ions with too much energy. Most ion sources produce ions with over 120 eV of energy. In many applications, ions with this much energy can damage the surface being treated or damage the film being deposited.
  • the present invention can provide a system and method for treating a surface of a substrate.
  • the present invention can include a system for treating a surface of a substrate, the system comprising a process chamber, a substrate support positioned inside the process chamber, the substrate support configured to support a substrate, an antenna located inside the process chamber, a containment shield, the containment shield partially surrounding the antenna, an aperture in the containment shield, and a plasma species extraction grid positioned at least partially over the aperture.
  • FIGURE 1 is an illustration of an existing PECVD system
  • FIGURE 2 is a representation of a waveform of a power pulse into a microwave antenna and the resulting total plasma light emission consistent with existing technology
  • FIGURE 3 is a representation of a waveform of a power pulse into a microwave antenna and the resulting total plasma light emission consistent with the present invention
  • FIGURE 4 illustrates a system for producing plasma radicals for surface treatment, thin film deposition, and/or film chemistry or structure alteration, constructed in accordance with one embodiment of the present invention
  • FIGURE 5 is an illustration a containment shield constructed in accordance with one embodiment of the present invention.
  • FIGURE 6 illustrates a system for producing plasma radicals for surface treatment, thin film deposition, and/or film chemistry or structure alteration, constructed in accordance with one embodiment of the present invention
  • FIGURE 7 illustrates a cross section of a profile of a containment shield constructed in accordance with an embodiment of the present invention
  • FIGURE 8 illustrates a cross section of a PECVD array constructed in accordance with one embodiment of the present invention
  • FIGURE 9 illustrates a cross section of a PECVD array constructed in accordance with one embodiment of the present invention.
  • FIGURE 10 is an illustration of a microwave waveguide with cascaded antenna
  • FIGURE 11 illustrates a microwave waveguide with impedance transition constructed in accordance with one embodiment of the present invention.
  • FIGURE 12 illustrates antenna configured in accordance with one embodiment of the present invention.
  • FIGURE 1 illustrates a cut away of a typical PECVD system 100 for large-scale deposition and etch processes.
  • This system includes a vacuum chamber 105 of which only two walls are illustrated.
  • the vacuum chamber houses a discharge tube 110.
  • the discharge tube 110 is formed of an antenna 115 that is configured to carry a microwave signal, or other signals, into the vacuum chamber 105. This microwave power radiates COOLEY GODWARD KRONISH LLP
  • ATTORNEY DOCKET NO.: APPL-024/00WO/304068-2070 outward from the antenna 115 and ignites and fractionalizes the surrounding support gas that is introduced through the support gas tube 120.
  • This ignited gas is a plasma and is generally adjacent to the discharge tube 110. Radical species generated by the plasma and electromagnetic radiation disassociate the feedstock gas(es) 130 introduced through the feedstock gas tube 125 thereby breaking up the feedstock gas to form new molecules.
  • Certain molecules formed during the disassociation process are deposited on the substrate 135.
  • the other molecules formed by the fractionalization and disassociation processes are waste and are removed through an exhaust port (not shown) — although these molecules tend to occasionally deposit themselves on the substrate.
  • Nonconductive and conductive films deposited utilizing plasma enhanced chemical vapor sources have been achieved with many types of power sources and system configurations. Most of these sources utilize microwaves, HF, VHF energy to generate the plasma and excited plasma species. It has been discovered that it is the average power applied to and discharged from the antenna that is the major contributing factor to the density of radicalized plasma species produced.
  • Film properties requirements are achieved by varying the process conditions during deposition, including the power levels, pulsing frequency and duty cycle of the source. To achieve required film properties the structure and structural content of the deposited film must be controlled. The film properties can be controlled by varying the radical species content, (among other important process parameters), and as stated above, the radical density is controlled primarily by the average and peak power levels into the plasma discharge. COOLEY GODWARD KRONISH LLP
  • the films organic content must be finely controlled, or possibly the contents must be in the form of a gradient across the entire film thickness.
  • fractionalization of the supporting gas is caused by electrons generated by the power applied to the antenna in the discharge tube. Some fractionalization is also caused by ions and other plasma radicals.
  • the effectiveness of electrons in fractionalizing a supporting gas is directly linked to electron density. In areas of higher electron density, fractionalization rates are higher for the same supporting gas pressures.
  • the required power level can unduly heat the substrate beyond its physical limits, and possibly render the films and substrate unusable. This primarily occurs in polymer material based substrates due to the low melting point of the material.
  • FIGURE 2 Shown in FIGURE 2 is a representation of a typical waveform of a power pulse 200 into a microwave antenna and the resulting total plasma light emission 210.
  • the vertical scale for the power pulse 200 and plasma light emission 210 are not the same, and are depicted here for illustration only.
  • the loss of energy is roughly 20% of the total power. A significant portion of this energy loss is due to the energy required for ignition of the plasma discharge.
  • FIGURE 2 shows the significant loss of power spent igniting and stabilizing the discharge.
  • a background minimal level of plasma ionization could be sustained through modulation of the microwave power source, phasing of pulsed sources, or by the addition of external sources such as AC or RF glow discharge. These methods are exemplary only and not meant to limit the present invention. Modulation of the microwave power source, for example, could include pulsing the power source up from an initial power amplitude, to the full pulse amplitude, and then returning to an initial power amplitude. In one embodiment, the initial power amplitude would be a low power level that is sufficient to sustain a background minimal level of plasma ionization. Those skilled in the art will realize alternative methods and systems consistent with the present invention.
  • FIGURE 3 depicts a power pulse 200 and plasma light emission 310 consistent with the present invention.
  • the vertical scale for the power pulse 200 and plasma light emission 310 are not the same, and are depicted here for illustration only. It should also be recognized, however, that the peak levels of plasma light emission 310 using the background energy have been tested at around four times the peak levels of plasma light emission 210 when a background energy is not used. Utilizing a small amount of background energy keeps the plasma sustained so that when the power pulse 200 is applied, the energy into the plasma discharge is of a greater amount. Since less energy is used to excite the plasma, more energy is allowed to excite radical species. COOLEY GODWARD KRONISH LLP
  • this background minimal level of plasma ionization could be sustained by applying power to the support gas tube 120 or feedstock gas tube 125.
  • the power applied to either tube could be an RF or AC glow discharge.
  • a bias could be applied to the substrate 135 itself for the purpose of pre-ionization.
  • Fractionalization efficiency can also be greatly enhanced by utilizing a containment shield near the discharge tube.
  • the benefits of containment shield utilization is discussed in commonly owned and assigned attorney docket number (APPL-012/00US), entitled SYSTEM AND METHOD FOR CONTAINMENT SHIELDING DURING PECVD DEPOSITION PROCESSES, which is incorporated herein by reference.
  • a cross section of an exemplary design of a containment shield 400 that could be utilized in a PECVD process is shown in FIGURE 4.
  • the containment shield 400 is generally formed of a dielectric material, such as quartz, and provides a volume around the discharge tube 110 into which the supporting gas can be pumped.
  • the exact volume of the containment shield 400 and the distance between the discharge tube 110 and the inner surface of the containment shield 400 can be varied based upon the desired film chemistry, the overall construction of the PECVD system and the desired gas pressures. COOLEY GODWARD KRONISH LLP
  • the containment shield 400 acts to contain electrons and other radicalized plasma species that would otherwise escape. By containing electrons, the electron density around the discharge tube 110 can be increased at distances further from the discharge tube 110. And by increasing electron density, the plasma can be extended further with the same process parameters — meaning that the fractionalization rate can be increased without changing other process parameters.
  • the containment shield 400 also helps prevent radicals and ions from escaping. This can help the fractionalization efficiency and prevents generated radicals and ions from being wasted. And by preserving these particles, the PECVD system can be operated over a wider range of operational parameters and operated more efficiently.
  • Containment shields also advantageously provide better control over supporting gas pressures around the discharge tube 110.
  • containment shields help provide a more uniform supporting gas pressure than was possible without a containment shield. This more uniform pressure allows the fractionalization rate to be better controlled and thus increased.
  • containment shields provide the ability to have a different pressure within a containment shield than in the remaining portions of the process chamber. This is advantageous because a higher pressure can be maintained within a containment shield COOLEY GODWARD KRONISH LLP
  • the result of this variable pressure allows more radicals to be produced at an overall lower process chamber pressure.
  • This type of control allows PECVD processes to be run at significantly lower process chamber pressures than previously possible.
  • FIGURE 4 Further illustrated in FIGURE 4 are the process chamber 105, the substrate 135, the substrate support 410, the discharge tube 110, the antenna 115, the containment shield 400, a microwave reflector 430, and a supporting gas tube 120.
  • the supporting gas tube 120 is located inside the containment shield 400 in this depiction.
  • the containment shield 400 includes an aperture 420 nearest the substrate 135. It is through this aperture 420 that the radicals escape and collide with the feedstock gas.
  • the size of this aperture 420 can be varied either manually or electronically to control the number of radicals escaping from the containment shield 400. It can also be a fixed-size aperture.
  • the pressure within the containment shield 400 can be higher than the pressure outside the containment shield 400.
  • the general PECVD process can be operated at a lower pressure while the plasma enhancement process and the radical production process can be operated at a much higher pressure.
  • pressure is a key factor in the fractionalization efficiency of the support gas. Up to a certain point, higher pressure enables higher fractionalization efficiencies. Thus, the higher pressure allowed inside a containment shield enhances the fractionalization efficiencies.
  • containment shields The efficiency of containment shields depends, at least partly, on the shields' effectiveness in properly channeling and preventing the escape of the electrons, ions and radicals. For this reason, the containment shield is generally formed from a dielectric material like quartz. The expense, fragility, and limitations on machinability of dielectric materials such as quartz, however, presents certain restrictions on containment shields.
  • FIGURE 5 illustrates a containment shield 500 in accordance with one embodiment of the present invention.
  • FIGURE 5 depicts a tube 510 that has been pre- coated with a dielectric coating 520 and placed around a discharge tube 110 so that the volume of gas within the tube 510 can be more fully ionized to achieve greater fractionalization.
  • the discharge tube 110 is a linear discharge tube with a single antenna 115.
  • the containment shield 500 consists of a quartz tube which is wrapped with a conductor (not shown). Instead of a conductor which is pre-coated with a dielectric coating, now a dielectric base material wrapped or coated with a conducting layer is used.
  • the tube 510 could be coated with alumina in order to form the dielectric coating 520.
  • Other dielectric materials could be COOLEY GODWARD KRONISH LLP
  • the embodiment in FIGURE 5 also shows slots 530 with variable slot apertures 540.
  • the variability of the slots 530 can be used to control process parameters such as the density of UV radiation, internal and external pressure differential, and flow into or out of the tube.
  • the slots 530 could also be of a fixed size.
  • the configuration of the shielding could be varied in many ways, including: size, shape, material, number of shields, number of slots, the addition of an outer metal shield to reflect lost electromagnetic radiation back into the plasma pipe volume, etc.
  • the tube 510 could be constructed out of metal. While metal itself will not produce the desired containment effects, by pre-coating the metal with a dielectric material an effective containment shield 500 can be produced.
  • a dielectric body such as a quartz tube
  • a conducting layer such as metal
  • utilizing containment shields and pre-coating any base materials with a dielectric coating will greatly reduce any pre-start time for the PECVD system.
  • a PECVD system has to be pre-started in order to allow for a layer of deposition to form on the surfaces surrounding the discharge tube. This allows the plasma density to stabilize before beginning the deposition process.
  • the current invention allows for plasma densities to be immediately stabilized and therefore reduces pre-start time.
  • the exemplary containment shield 500 from FIGURE 5 may also be used as a source of power for sustaining a minimal background level of ionization.
  • a power source could be applied to the conductive portion of the containment shield 500 in order to sustain a minimal background level of plasma ionization and increase the ionization efficiency.
  • a conductive material (not shown) could be added to the tube 510 and then both the tube 510 and the conductive material (not shown) could be pre-coated with a dielectric coating 520.
  • FIGURE 6 illustrates another embodiment of a containment shield 600 consistent with the present invention.
  • a cross sectional view of a containment shield 600 that could be used in a PECVD process is shown.
  • a discharge COOLEY GODWARD KRONISH LLP is shown.
  • ATTORNEY DOCKET NO.: APPL-024/00WO/304068-2070 tube 110 and support gas tube 120 are shown partially surrounded by a containment shield 600.
  • This containment shield 600 is formed using a dielectric coating 520 on a base material 610 such as metal.
  • the containment shield 600 is shown with a circular profile, where aperture 420 in the containment shield is nearest the substrate 135. It should be recognized by those skilled in the art that any profile could be used, and that the circular profile shown here is exemplary only. Alternative profiles could be used to control certain process parameters. For example, a profile that increases the resonance time of the support gas could be used to further increase ionization efficiency.
  • the dielectric coating 520 that is pre-coated on the base material 610 will heat during the microwave pulsing.
  • the benefits of allowing the dielectric coating 520 to heat have been previously discussed. The heating, however, could potentially cause problems keeping the dielectric coating 520 affixed to the base material 610.
  • a temperature control system (not shown) can be used to help control the temperature of the base material 610.
  • the base material 610 could be heated near the dielectric coating 520 and cooled further away. Cooling may be used to keep the base material 610 from affecting exterior portions of the system and to prevent warping.
  • the benefits of a high temperature dielectric coating 520 can be retained without losing adhesion of the dielectric coating 520 itself.
  • FIGURE 6 Further illustrated in FIGURE 6 is a plasma species extraction grid 620 placed over the aperture 420 in the containment shield 600.
  • This plasma species extraction grid COOLEY GODWARD KRONISH LLP
  • a DC, RF, or AC potential may be applied to the plasma species extraction grid 620 in order to accelerate and control the direction of ions or other plasma species out of the containment shield 600.
  • the potential applied to this plasma species extraction grid 620 could also be used for sustaining a background minimal level of plasma ionization between power pulses.
  • a support gas is introduced through the support gas tube 120 in FIGURE 6. Excitation of the support gas is accomplished by subjecting the gas to microwave power from the antenna 115. Free electrons gain energy from the imposed microwave field and collide with neutral gas atoms, thereby ionizing those atoms including fractionalizing the supporting gas to form a plasma.
  • This plasma contains partially ionized gas that consists of large concentrations of excited atomic, molecular, ionic, and free radical species. These particles impact the substrate 135, and depending upon the process employed, clean the substrate 135, modify the surface, or remove excess electrical charge. It is the interaction of these excited species with solid surfaces placed in or near the plasma that results in the chemical and physical modification of the material surface.
  • the ions In most microwave based processes, however, the ions never gain enough energy to reach the substrate 135.
  • the ions, or other plasma species can be accelerated and directed so that they impact the substrate 135.
  • the COOLEY GODWARD KRONISH LLP In one embodiment, the COOLEY GODWARD KRONISH LLP
  • ATTORNEY DOCKET NO.: APPL-024/00WO/304068-2070 microwave power plasma source could be used as an ion source.
  • Such an ion source could produce high ion densities with various electron voltages, depending on the potential applied to the plasma species extraction grid 620.
  • the plasma species extraction grid 620 could be constructed from many materials consistent with the present invention, using etch resistant materials such as Tungsten will help prevent any sputtering effects from the plasma species extraction grid 620 itself. Moreover, by allowing the plasma species extraction grid 620 to heat up, deposition on the plasma species extraction grid 620 itself, and any subsequent flaking, can also be prevented.
  • etch resistant materials such as Tungsten
  • the plasma species extraction grid 620 can be added to many microwave power source systems in accordance with the present invention.
  • the description of the plasma species extraction grid 620 with the current embodiment is by example, and not intended to limit the present invention.
  • the plasma species extraction grid 620 could be added over the apertures 540 from FIGURE 5.
  • a plasma species extraction grid 620 is shown placed over the aperture 420 of the containment shield 400.
  • a plasma 630 forms around the discharge tube 110.
  • the shape of the containment shield 400 and the size of the aperture 420 can assist in directing any escaping ions or other plasma species down toward the substrate.
  • the plasma species extraction grid 620 can also be used to further control, accelerate, and to energize ions or other plasma species. These extracted plasma species 640 are shown being directed towards the substrate 135.
  • FIGURE 7 illustrates a containment shield 700 with an alternative profile consistent with the present invention.
  • the shape of the containment shield 700 can be varied to control surface treatment properties.
  • the shape of the containment shield can be optimized from one application to another for specific energetic species and radical/metastable conditions, to achieve specific deposited or etched material properties.
  • the containment shield 700 is constructed with more of a triangular profile.
  • the exemplary profile creates an increased baffle for the support gas supplied from the support gas tube 120.
  • the increased baffle lengthens the resonance time for the support gas.
  • the resonance time is greater because of the increased time it takes for at least some of the gas to pass from the support gas tube 120 out through the aperture 420 in the containment shield 700 and down toward the substrate 135.
  • the increased resonance time allows for increased ionization efficiency and greater fractionalization of the support gas.
  • Various profiles can be constructed depending on the specific application.
  • the present invention allows greater flexibility in constructing such profiles.
  • Base materials with greater machinability and lower cost than dielectric materials, can be used to form profiles of any shape. Consistent with one embodiment of the present invention, these COOLEY GODWARD KRONISH LLP
  • ATTORNEY DOCKET NO.: APPL-024/00WO/304068-2070 profiles can then be pre-coated with a dielectric coating to form a containment shield.
  • a dielectric coating to form a containment shield.
  • FIGURE 8 there is an illustration of an exemplary embodiment of a containment shield 800 for a static array of discharge tubes 110.
  • FIGURE 8 shows a cross-sectional view of a containment shield 800 that could be used in a PECVD process consistent with the present invention.
  • a static array of discharge tubes 110 and support gas tubes 120 are shown partially surrounded by a containment shield 800.
  • the containment shield 800 which is formed using a dielectric coating 520 on a base material 610 such as metal, is placed such that the apertures 420 will guide gas from the support gas tubes 120 out through apertures 420 down toward the substrate 135.
  • the containment shield 800 has slightly oval profiles. As previously discussed, other profiles could be used consistent with the present invention.
  • the present embodiment also uses a consistent profile along the static array of discharge tubes 110. This is exemplary only. Those skilled in the art will realize many variations and modifications consistent with the present invention. Moreover, it will be realized by those skilled in the art, that a plasma species extraction grid 620 can be placed over the apertures 420 in order to gain the benefits of plasma species directionalization and acceleration that are described herein.
  • the containment shield 800 can also act to either block energy transfer between antenna 115 or to allow energy transfer between the antenna 115.
  • the benefits of an energy blocking base material 610 were COOLEY GODWARD KRONISH LLP
  • Nothing in the present invention should be read to limit the type of material that could be used as the base material 610.
  • FIGURE 9 there is an illustration of another embodiment consistent with the present invention.
  • a static array of discharge tubes 110 and support gas tubes 120 are shown partially surrounded by a containment shield 900.
  • the containment shield 900 is formed using dielectric dividers 910 placed between the discharge tubes 110.
  • dielectric dividers 910 positioned between the discharge tubes 110, energy transfer is allowed between the antenna 115.
  • This energy transfer can be used to produce the pre-ionization effects required to sustain a plasma around each discharge tube 110 while an antenna 115 is in an off phase of its power cycle.
  • adjacent antenna 110 could be controlled by a timing control that phases the pulsed sources. This phasing could be implemented so that a minimal background level of plasma ionization is sustained due to the energy transferred from the adjacent antenna 115.
  • the dielectric dividers 910 are then connected to a base material 610 such as metal.
  • the base material 610 is pre-coated with a dielectric coating 520 on, at least, any surfaces that are exposed to, and help partially enclose, the discharge tube 110.
  • FIGURE 9 also shows baffles formed using a dielectric coating 520 that is pre-coated on a baffle material 920 such as metal. The baffle has been added to help increase the resonance time of the gas from the support gas tube 120. Other shapes and designs could be used to control other process parameters. COOLEY GODWARD KRONISH LLP
  • the baffle material 920 could be constructed out of a microwave reflecting material like metal, such that some of the energy emitted by the antenna 115 will be reflected back towards the plasma around the discharge tube 110.
  • a microwave reflecting material like metal
  • the baffle in this embodiment may be removed.
  • the shape and/or orientation of the dielectric divider 910 could be changed so as to create a baffle.
  • each contains a static array of discharge tubes 110.
  • an antenna 115 may be a linear antenna, split antenna, non- linear antenna, etc.
  • the use of a dielectric coating 520 in order to create a containment shield can help to reduce the size of the containment shield and thus reduce spacing required between antenna 115 in a static array. With reduced spacing between antenna 115, more uniform film properties can be achieved.
  • an antenna 115 may be cascaded multiple times as shown in FIGURE 10 and power split between each of the cascaded antenna 1060. However, given the power limitations for currently used generators, this configuration will not produce effective power densities for larger systems.
  • FIGURE 10 shows a microwave waveguide 1020, impedance transition 1030, elbow 1070, and movable plunger 1080 consistent with existing technology. As can be seen in FIGURE 10, the length of the waveguide 1020 and
  • ATTORNEY DOCKET NO.: APPL-024/00WO/304068-2070 impedance transition 1030 keeps the microwave generator 1010 away from the antenna stub 1040 and antenna 1050. Beyond the increased power losses due to the greater distance between the microwave generator 1010 and the antenna stub 1040, the size of the waveguide 1020 and impedance transition 1030 has made it unwieldy and difficult to construct and house PECVD systems. With existing technology, the manufacture of PECVD systems has been limited by the availability of individual waveguide parts. Integrating the waveguide 1020 and the impedance transition 1030 can decrease the size of the waveguide for both usability and power efficiency.
  • FIGURES 11 and 12 illustrate an integrated microwave waveguide with impedance transition 1100 consistent with the present invention.
  • the microwave generator 1010 can be placed closer to the antenna stub 1040 and antenna 1050 to increase power density.
  • the waveguide block 1120 is depicted in FIGURES 11 and 12 as a single piece of material, inside of which is the integrated waveguide with impedance transition 1110, that depiction is in no way intended to limit the present invention.
  • the waveguide block 1120 could comprise two pieces of material where the integrated waveguide with impedance transition 1110 is connected at the antenna stub 1040.
  • the integrated waveguide with impedance transition 1110 can be machined into a waveguide block 1120 comprised of COOLEY GODWARD KRONISH LLP
  • the microwave signal can be transitioned throughout the waveguide section, fully integrating the waveguide 1020 and impedance transition 1030.
  • the integrated waveguide with impedance transition 1110 essentially eliminates any separate waveguide section. This allows a waveguide block, with an integrated microwave waveguide to be built much smaller than waveguides that have to use separate waveguide sections 1020, elbows 1070 and impedance transition sections 1030.
  • two conduits can be machined into the waveguide block 1120 to form waveguide sections. These conduits would form channels from the surface of, and into, the waveguide block 1120. These channels could then be connected with impedance transition sections to form the integrated waveguide with impedance transition 1110. In this embodiment, the waveguide section and transition section are partially integrated in order to form the integrated waveguide with impedance transition 1110.
  • FIGURES 11 and 12 Also illustrated in FIGURES 11 and 12 is a movable plunger 1080 disposed on a side of the integrated waveguide 1100 opposite the microwave generator 1010 consistent with the present invention.
  • the movable plunger 1080 can be moved in order to tune the waveguide.
  • the movable plunger 1080 can be displaced up or down to move a microwave node to the antenna stub 1040.
  • the power density is increased further.
  • a single cascade power split antenna 1210 could be used with the present invention.
  • the antenna stubs 1040 in the present invention can be located much closer than antenna stubs 1040 in FIGURE 10. Since the antenna stubs 1040 are located closer together, the antenna 1050 does not have to be power split as many times in order to get to the desired spacing.
  • the present invention makes it possible to achieve effect power densities not previously possible.
  • the present invention provides, among other things, a system and method for producing electrons, ions and radicalized atoms and molecules for surface treatment and film chemistry, and film structure, formation and alteration.
  • Those skilled in the art can readily recognize that numerous variations and substitutions may be made in the invention, its use and its configuration to achieve substantially the same results as achieved by the embodiments described herein. Accordingly, there is no intention to limit the invention to the disclosed exemplary forms. Many variations, modifications and alternative constructions fall within the scope and spirit of the disclosed invention as expressed in the claims.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

L'invention concerne un système et un procédé de traitement d'une surface d'un substrat. Un mode de réalisation inclut un système de traitement d'une surface d'un substrat, le système incluant une chambre de traitement, un support de substrat positionné à l'intérieur de la chambre de traitement, le support de substrat étant configuré pour supporter un substrat, une antenne placée à l'intérieur de la chambre de traitement, une enceinte de confinement, l'enceinte de confinement entourant partiellement l'antenne, une ouverture dans l'enceinte de confinement et une grille d'extraction d'espèces de plasma positionnée au moins partiellement par-dessus l'ouverture.
PCT/US2008/052383 2008-01-30 2008-01-30 Système et procédé pour sources d'espèces de plasma par micro-ondes WO2009096954A1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
PCT/US2008/052383 WO2009096954A1 (fr) 2008-01-30 2008-01-30 Système et procédé pour sources d'espèces de plasma par micro-ondes
US12/833,571 US20110097517A1 (en) 2008-01-30 2010-07-09 Dynamic vertical microwave deposition of dielectric layers
US12/833,524 US20110076422A1 (en) 2008-01-30 2010-07-09 Curved microwave plasma line source for coating of three-dimensional substrates
US12/833,473 US20110076420A1 (en) 2008-01-30 2010-07-09 High efficiency low energy microwave ion/electron source
PCT/US2010/041585 WO2011006109A2 (fr) 2008-01-30 2010-07-09 Source d'ions/électrons micro-ondes basse énergie à haut rendement

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2008/052383 WO2009096954A1 (fr) 2008-01-30 2008-01-30 Système et procédé pour sources d'espèces de plasma par micro-ondes

Related Child Applications (3)

Application Number Title Priority Date Filing Date
US12/833,524 Continuation-In-Part US20110076422A1 (en) 2008-01-30 2010-07-09 Curved microwave plasma line source for coating of three-dimensional substrates
US12/833,473 Continuation-In-Part US20110076420A1 (en) 2008-01-30 2010-07-09 High efficiency low energy microwave ion/electron source
US12/833,571 Continuation-In-Part US20110097517A1 (en) 2008-01-30 2010-07-09 Dynamic vertical microwave deposition of dielectric layers

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WO2009096954A1 true WO2009096954A1 (fr) 2009-08-06

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011069908A1 (fr) 2009-12-09 2011-06-16 Roth & Rau Ag Source de plasma ecr présentant une protection de revêtement, et utilisation de la protection de revêtement
WO2015007653A1 (fr) 2013-07-18 2015-01-22 W & L Coating Systems Gmbh Dispositif de revêtement plasmachimique

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6445123B1 (en) * 1998-07-02 2002-09-03 Micron Technology, Inc. Composite self-aligned extraction grid and in-plane focusing ring, and method of manufacture
US20060019477A1 (en) * 2004-07-20 2006-01-26 Hiroji Hanawa Plasma immersion ion implantation reactor having an ion shower grid
US20070221294A1 (en) * 2006-03-27 2007-09-27 Tokyo Electron Limited Plasma processing apparatus and plasma processing method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6445123B1 (en) * 1998-07-02 2002-09-03 Micron Technology, Inc. Composite self-aligned extraction grid and in-plane focusing ring, and method of manufacture
US20060019477A1 (en) * 2004-07-20 2006-01-26 Hiroji Hanawa Plasma immersion ion implantation reactor having an ion shower grid
US20070221294A1 (en) * 2006-03-27 2007-09-27 Tokyo Electron Limited Plasma processing apparatus and plasma processing method

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011069908A1 (fr) 2009-12-09 2011-06-16 Roth & Rau Ag Source de plasma ecr présentant une protection de revêtement, et utilisation de la protection de revêtement
WO2015007653A1 (fr) 2013-07-18 2015-01-22 W & L Coating Systems Gmbh Dispositif de revêtement plasmachimique
DE102013107659A1 (de) 2013-07-18 2015-01-22 W & L Coating Systems Gmbh Plasmachemische Beschichtungsvorrichtung
DE102013107659B4 (de) * 2013-07-18 2015-03-12 W & L Coating Systems Gmbh Plasmachemische Beschichtungsvorrichtung
US10186401B2 (en) 2013-07-18 2019-01-22 W & L Coating Systems Gmbh Plasma-chemical coating apparatus

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