WO2009082999A2 - Puce laser à semi-conducteur à émission par la tranche comprenant une bande de contact structurée - Google Patents

Puce laser à semi-conducteur à émission par la tranche comprenant une bande de contact structurée Download PDF

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Publication number
WO2009082999A2
WO2009082999A2 PCT/DE2008/002131 DE2008002131W WO2009082999A2 WO 2009082999 A2 WO2009082999 A2 WO 2009082999A2 DE 2008002131 W DE2008002131 W DE 2008002131W WO 2009082999 A2 WO2009082999 A2 WO 2009082999A2
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WIPO (PCT)
Prior art keywords
semiconductor laser
laser chip
contact strip
carrier injection
edge
Prior art date
Application number
PCT/DE2008/002131
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German (de)
English (en)
Other versions
WO2009082999A3 (fr
Inventor
Harald Koenig
Christian Lauer
Peter Brick
Wolfgang Schmid
Robin Fehse
Uwe Strauss
Original Assignee
Osram Opto Semiconductors Gmbh
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Publication of WO2009082999A2 publication Critical patent/WO2009082999A2/fr
Publication of WO2009082999A3 publication Critical patent/WO2009082999A3/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/20—Lasers with a special output beam profile or cross-section, e.g. non-Gaussian
    • H01S2301/206—Top hat profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/162—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions made by diffusion or disordening of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2036—Broad area lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3095—Tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures

Definitions

  • An edge-emitting semiconductor laser chip is specified.
  • An object to be solved is to specify an edge-emitting semiconductor laser chip in which the emitted laser radiation has a reduced beam divergence, in particular in the slow-axis direction.
  • the edge-emitting semiconductor laser chip comprises an active zone.
  • the active zone of the semiconductor laser chip is suitable for generating electromagnetic radiation. That is, during operation of the edge-emitting semiconductor laser chip, electromagnetic radiation is generated and amplified in the active zone, which leaves the semiconductor laser chip at least partially through a coupling-out facet.
  • the active region comprises one or more quantum well structures which provide optical amplification upon injection of electrical current through stimulated recombination.
  • quantum well structure comprises in particular any structure, in the case of the charge carriers by inclusion ("confinement") can experience a quantization of their energy states.
  • quantum well structure does not specify the dimensionality of the quantization. It thus includes quantum wells, quantum wires and quantum dots and any combination of these structures.
  • the edge emitting semiconductor laser chip further comprises a contact strip.
  • Electric current in the form of charge carriers which is subsequently used to generate electromagnetic radiation in the active zone, is injected into the active zone via the contact strip. That is, the semiconductor laser chip is electrically contacted by means of the contact strip.
  • the contact strip may be located on the upper side and / or the lower side of the edge emitting semiconductor laser chip.
  • the contact strip is structured. That is, the contact strip is not homogeneous, for example formed as a metal layer of uniform width and / or thickness, but the contact strip has structures.
  • other means for structured charge carrier injection such as, for example, quantum well
  • the means for structured charge carrier injection for example the contact strip, is structured in such a way that a charge carrier injection into the active zone decreases towards a side of the semiconductor laser chip where the output semiconductor facet of the semiconductor laser chip is located.
  • the contact strip extends, for example, on the upper side of the semiconductor laser chip in the emission direction of the laser radiation generated by the edge-emitting semiconductor laser chip during operation. That is, the main extension direction of the contact strip is, for example, parallel to the emission direction.
  • the contact strip extends approximately from the side facing away from the Auskoppelfacette side of the edge emitting semiconductor laser chip to the side of the semiconductor laser chip, on which the Auskoppelfacette of the semiconductor laser chip is located.
  • the contact strip is structured in such a way that in areas of the contact strip in the vicinity of the coupling-off facet less current is injected into the active zone than in regions of the contact strip which are far away from the coupling-out facet.
  • the patterned charge carrier injection into the active zone therefore decreases toward the side of the semiconductor laser chip where the output semiconductor chip of the semiconductor laser chip is located.
  • the semiconductor laser chip comprises an active zone in which electromagnetic radiation is generated during operation of the semiconductor laser chip. Furthermore, the edge-emitting semiconductor laser chip comprises at least one means for structured charge carrier injection into the active zone, in particular at least one structured contact strip, wherein the means is structured in such a way that a charge carrier injection into the active zone decreases toward a side of the semiconductor laser chip, at which a coupling-out facet of the Semiconductor laser chips is located.
  • the contact strip is structured into regions of high and regions of low charge carrier injection. That is, the contact strip has areas from which little current is injected into the active zone.
  • the contact strip has areas from which a higher current is injected into the active zone. For example, the active zone is energized from these areas in such a way as if the contact strip were not structured. These areas are the areas of high charge carrier injection and thus high current density.
  • the contact strip is structured in a region of high and low-carrier injection regions in a direction along the longitudinal center axis of the contact strip.
  • the contact strip extends from the side of the semiconductor laser chip which faces away from the coupling-out facet to the side of the semiconductor laser chip where the coupling-out facet is located.
  • the longitudinal central axis is an imaginary line which extends in the contact strip in the center thereof and also extends from the side of the semiconductor laser chip, which faces away from the Auskoppelfacette, to the side of the semiconductor laser chip on which the Auskoppelfacette of the semiconductor laser chip is located.
  • the longitudinal center axis is parallel to the emission direction of the laser radiation generated by the semiconductor laser chip.
  • the longitudinal center axis may have an axis of symmetry form the contact strip. If the contact strip is now traversed along the longitudinal central axis, the contact strip is structured into regions of high and regions of low charge carrier injection.
  • the areas may, for example, each have a rectangular or differently shaped base area. The areas may be formed in this way, for example, by strips which have the same width as the contact strip.
  • the area fraction of the regions of high carrier injection decreases with decreasing distance towards the side of the semiconductor laser chip at which a coupling-out facet of the semiconductor laser chip is located. In this way, the charge carrier injection into the active region decreases toward the side of the semiconductor laser chip where the output coupling facet of the semiconductor laser chip is located.
  • the area ratio of the areas of high Storminj ection refers to the total area of the contact strip.
  • the contact strip is in a direction transverse to the longitudinal center axis of the contact strip in FIG
  • Areas of high and low-carrier injection areas are structured. That is, one passes over the contact strip in a direction transverse to the direction of the longitudinal center axis, that is, for example, perpendicular to the longitudinal central axis, so passes over areas higher and lower
  • the area fraction of the regions of high charge carrier injection increases with increasing distance from the longitudinal central axis. This means that in the middle of the contact strip little or no electric current is injected into the active zone in this way. In the outer regions of the contact strip, however, more current is injected into the active zone than in the middle of the contact strip.
  • a section of the contact strip structured in the direction transverse to the longitudinal central axis is preferably located in the vicinity of the side of the contact strip
  • the contact strip can then, for example, be unstructured, so that a high current is injected into the active zone there. That is, the current density in the active zone is high there.
  • the area fraction of the areas of high charge carrier injection decreases with decreasing distance to the longitudinal center axis and with decreasing distance to the side of the semiconductor laser chip from where there is a Auskoppelfacette the semiconductor laser chip.
  • This can be achieved, for example, in that the areas of high charge carrier injection are formed by strips which extend along the longitudinal central axis of the contact strip and taper in the direction of the coupling-out facet.
  • the contact strip is in one Direction transverse to the longitudinal center axis of the contact strip and in a direction parallel to the longitudinal center axis of the contact strip in areas of high and low charge carrier injection areas structured. This can be achieved, for example, by structuring the contact strip into regions of high and low charge carrier injection which extend longitudinally and transversely to the longitudinal central axis of the contact strip.
  • the contact strip in the regions of high charge carrier injection consists of a first material and in regions of low charge carrier injection of a second material.
  • the first material is selected such that its electrical contact resistance to the semiconductor material of the edge-emitting semiconductor laser chip, to which the contact strip is applied, is selected smaller than the contact resistance of the second material. In this way, a structuring of the contact strip in areas of higher and lower
  • the first and second materials contain or consist of first and second metals.
  • both the high and the low charge carrier regions have approximately the same thermal conductivity, since they each consist of or contain metals. Consequently, the thermal conductivity does not vary spatially and thus the heat removal from the semiconductor laser chip via the contact strip hardly or not at all.
  • the contact strip third, fourth, and so forth may have further regions formed of third, fourth, and so forth further materials are.
  • the height of the charge carrier injection from these areas may then be between the height of the charge carrier injection from the areas with the first metal and the height of the charge carrier injection with the areas of the second metal. That means the
  • Contact strip then has areas of high, areas of lower and areas where the charge carrier injection is between these two extremes. In this way, a further, more accurate and finer structuring and thus an even more accurate setting of
  • Carrier injection into the active zone allows.
  • contact strips which are structured in the manner described here, are located both on the upper side and the underside of the edge-emitting semiconductor laser chip.
  • edge-emitting semiconductor laser chip described here will be explained in more detail below on the basis of exemplary embodiments and the associated figures.
  • FIG. 1 shows plotted measured values of the beam divergence in angular degrees versus the output power W of an edge-emitting semiconductor laser chip.
  • Figure 2 shows a schematic plan view of the
  • FIG. 3A shows a schematic perspective view of a simulated temperature distribution in an edge-emitting semiconductor laser chip.
  • FIG. 3B shows an edge-emitting semiconductor laser chip described here in a schematic sectional representation.
  • FIGS. 4 to 8 show schematic plan views of exemplary embodiments of edge-emitting semiconductor laser chips described here with different configurations of the contact strip.
  • FIGS. 9A and 9B show a further possibility for
  • the adjustment effort of the micro-optics is reduced drastically if the beam divergence, at least in the already narrower horizontal direction - the so-called slow axis direction - would be smaller and the beam for efficient fiber coupling only in the vertical direction - that is in the direction perpendicular to the plane if, for example, the upper side 1a of the semiconductor laser chip is located - it must be highly transformed.
  • FIG. 1 shows plotted measured values of the beam divergence in angular degrees versus the output power of an edge-emitting semiconductor laser chip.
  • the beam divergence was determined at 95% power inclusion.
  • the beam divergence was in the horizontal direction (slow axis direction), that is, in a plane parallel to the
  • FIG. 2 shows a schematic plan view of the coupling of laser radiation 10, which is generated by an edge emitting semiconductor laser chip 1, into a fiber optic 103.
  • FIG. 2 shows an edge emitting semiconductor laser chip 1, which is designed as a laser bar with five individual emitters.
  • the edge-emitting semiconductor laser chip has five contact strips 2 on its upper side 1a.
  • a further optical element 102 which is for example a converging lens, the laser radiation is brought together and coupled into the fiber optics 103.
  • FIG. 3A shows, in a schematic perspective illustration, a simulated temperature distribution in an edge-emitting semiconductor laser chip 1, which is designed as a laser bar with 24 individual emitters. For reasons of symmetry, only half the bar with twelve emitters is shown in the illustration.
  • the left edge in FIG. 3A corresponds to the center of the laser bar.
  • the dark spots in FIG. 3A symbolize regions 30 of high temperature T9.
  • the reference symbols Tl to T9 mark temperature ranges, wherein Tl indicates the region of least temperature and T9 the region of highest temperature.
  • the high power dissipation density in high-performance edge-emitting semiconductor laser chips generates a temperature gradient in the semiconductor laser chip.
  • the individual emitter of the edge-emitting semiconductor laser chip 1 is formed Inhomogeneous temperature distribution in the resonator of the edge emitting semiconductor laser chip 1 from.
  • local maxima of the temperature T9-the regions of high temperature 30 - are determined in the middle of the coupling-out facet 3 of each individual emitter. This is also the case for edge-emitting semiconductor laser chips with more or fewer emitters than for the laser in FIG. 3A or even for lasers with only a single emitter.
  • the refractive index of the semiconductor material of which the semiconductor laser chip 1 is formed is temperature-dependent, a thermal converging lens is formed in each emitter which distorts the phase front of the laser light propagating in the resonator.
  • the far field of the laser expands in a horizontal (slow axis) direction compared to the undistorted case.
  • the beam divergence increases due to the phase front distortion becoming more intense with the power loss (compare also FIG. 1).
  • the maximum temperature reached and thus the strength of the thermal lens increases with the electrical power dissipation generated in the semiconductor laser chip 1.
  • Higher efficiency lasers produce less power dissipation in the semiconductor laser chip with the same optical output power, and generally exhibit lower horizontal beam divergences.
  • FIG. 3B shows an edge-emitting semiconductor laser chip 1 described here in a schematic sectional illustration.
  • the edge-emitting semiconductor laser chip can be manufactured in different material systems. For example, it is a semiconductor laser chip, which on one of the based on the following semiconductor materials: GaP, GaAsP, GaAs, GaAlAs, AlGaInAs, InGaAsP, GaN, InGaN, AlGaInAsSb. In addition, other semiconductor materials from the III -V or II-VI semiconductor systems are conceivable.
  • the semiconductor chip is preferably based, for example, on the AlGaInAs material system.
  • the edge-emitting semiconductor laser chip can be manufactured in different material systems. For example, it is a semiconductor laser chip, which on one of the based on the following semiconductor materials: GaP, GaAsP, GaAs, GaAlAs, AlGaInAs, InGaAsP, GaN, InGaN, AlGaInAs
  • Semiconductor laser chip 1 is, for example, a diode laser bar having a multiplicity of emitters, for example having four to six emitters, which has a resonator length of greater than or equal to 100 ⁇ m, for example between 3 and 6 mm.
  • the width of the laser radiation emitted by the individual emitters is preferably between 50 ⁇ m and 150 ⁇ m.
  • the edge-emitting semiconductor laser chip 1 can, for example, generate laser radiation with a central wavelength of 915 nm or 976 nm. However, depending on the semiconductor material used, the generation of short-wave or longer-wave laser light is also possible.
  • the semiconductor laser chip 1 comprises a substrate 11, which may, for example, be a growth substrate and which may form a p-contact layer. Furthermore, the edge-emitting semiconductor laser chip 1 comprises an active zone 14, which is provided for generating electromagnetic radiation. The active region 14 is embedded in waveguiding layers 13 which have a higher bandgap and a lower refractive index than the active region 14. A coating layer 12, which has a higher band gap and a lower refractive index than the
  • Wave guiding layers 13 has. On the side facing away from the substrate 11 of the semiconductor laser chip 1 is located on the coating layer 12 is a final contact layer 15. On the contact layer 15 are contact strips 2, via which electrical current can be injected into the active zone 14. The width of the contact strips 2 is preferably between 10 .mu.m and several 100 .mu.m.
  • FIG. 4 shows a contact strip 2 of an edge-emitting semiconductor laser chip 1 described here in a schematic plan view.
  • the contact strip 2 may be located on the upper side 1a and / or on the lower side 1b of the semiconductor laser chip 1.
  • the contact strip 2 is structured in such a way that a charge carrier injection into the active zone 14 decreases toward a side of the semiconductor laser chip 1 where the output coupling facet 3 of the semiconductor laser chip 1 is located.
  • a structured charge carrier injection on the top and / or bottom of the semiconductor laser chip 1 leads via the thus likewise structured distribution of the ohmic power dissipation density in the semiconductor laser chip 1 to a targeted influencing of the thermal lens in the resonator of the semiconductor laser chip 1.
  • the resonator is characterized by the Auskoppelfacette 3 and that of the Auskoppelfacette 3 opposite side of the semiconductor laser chip 1 is formed.
  • the contact strip 2 is divided into regions of low charge carrier injection 22 and high charge carrier injection 21. Through the areas lower
  • Carrier injection 22 hardly or no current is impressed into the active zone 14. On the other hand, in the areas of high charge carrier injection 21, current is impressed similarly into the active zone 14 as in the unstructured case.
  • the structuring of the charge carrier injection can be done as follows:
  • a correspondingly structured passivation layer is applied to the semiconductor laser chip 1, such that the passivation layer is removed only in the regions of high charge carrier injection 21, so that there contact between the material of the contact strip.
  • a metal - and the semiconductor material of the semiconductor laser chip 1 consists.
  • the contact strip 2 is structured in areas of high and low carrier injection.
  • a p-doped semiconductor layer can be applied over an n-doped contact layer 15, whereby after structured removal of the p-doped layer, the same effect occurs.
  • Another possibility for structuring the charge carrier injection is that by quantum well Intermixing the charge carrier recombination in the active zone 14 and thus the generation of heat loss in the active zone 14 is prevented at these locations. Structured implementation of quantum well intermixing allows for higher and lower ranges
  • Another possibility for structuring the contact strip and thus the charge carrier injection is to locally form the contact strip 2 made of different metals or other materials which have different electrical contact resistances at the interface between these materials and the contact layer 15 of the semiconductor laser chip. This also leads to a structured charge carrier injection and a division of the contact strip 2 into regions of high charge carrier injection 21 and regions of low charge carrier injection 22. This method simultaneously avoids a variation of the thermal conductivity of the contact strip 2 and consequently a variation of the
  • the contact layer 15 is formed from p-doped GaAs. In areas of high Storminj etation the contact strip is then formed from Cr / Pt / Au, where Cr is the crucial metal for the low contact resistance. In areas of low Storminj ection, for example, aluminum is used.
  • the charge carrier injection near the output coupling facet 3 varies in the longitudinal direction, parallel to the longitudinal axis 23 of FIG Contact strip 2. In this way, the temperature rise is reduced at the Auskoppelfacette 3 and compensated for the temperature distribution in the semiconductor laser chip 1.
  • FIG. 5 shows the contact strip 2 of an edge-emitting semiconductor laser described here.
  • the charge carrier injection varies in a lateral direction, that is to say in the direction transverse to the longitudinal axis 23.
  • the structuring preferably takes place only in the vicinity of the coupling-out facet 3. Over the remaining length of the contact strip 2, no structuring takes place.
  • the structuring consists of regions of high charge carrier injection 21 and strip-like regions of low charge carrier injection 22, wherein in the middle of the contact strip 2 particularly little current is injected and the area fraction of the regions of high charge carrier injection 21 is particularly small there.
  • FIG. 6 shows the contact strip 2 of an edge emitting semiconductor laser chip 1 described here.
  • the current density is in the active one
  • Zone 14 by structuring the contact strip 2 in the longitudinal and lateral directions near the Auskoppelfacette 3 given a softer transition from the unstructured to the structured area. In this case, the areas of higher rejuvenate
  • FIG. 7 shows the contact strip. 2 of an edge-emitting semiconductor laser chip 1 described here.
  • FIG. 9 a halftone structuring of the contact strip 2 is described.
  • the rectangles in FIG. 9 include regions of low charge carrier injection 22, that is, on average, the injected current density decreases toward the output coupling facet 3 and toward the central axis 23.
  • the structuring is given by one of the structuring measures described above. That is, for example, a passivation layer may be present in the low injection regions 22.
  • FIGS. 9A and 9B show a further possibility for structuring the charge carrier injection on the basis of a schematic sectional representation through a part of the semiconductor laser chip 1.
  • the structuring of the contact strip 2 takes place via a tunnel contact.
  • a very highly doped pn junction in particular in the reverse direction, forms a tunnel junction.
  • This tunnel contact can be ohmic with appropriate design, that is he then has a linear current-voltage characteristic.
  • FIG. 9A it is shown that a highly p-doped tunnel layer IIa impinges on the p-contact layer 11 of FIG Semiconductor laser chips 1 is applied.
  • the highly p-doped tunnel contact layer IIa follows a highly n-doped tunnel contact layer IIb.
  • the tunnel contact layers are preferably at least where later should be a contact strip 2, applied over the entire surface of the p-contact layer 11 and locally removed after their epitaxy.
  • n-side of the semiconductor laser chip 1 This is described in connection with FIG. 9B.
  • n-contact layer 15 a highly n-doped tunnel layer 15a and applied to this a highly p-doped tunnel layer 15b.
  • metal-to-p-doped area contact and metal-to-n-doped metal contact where the tunneling layers were left, a low current density results in the active zone, whereas where the tunneling layers were removed and contact between the metal and the n-doped contact layer 15, a high current density.
  • high current density in the region of the tunnel layers and low current density where a metal was made to n-contact with poor contact of metal to the n-doped region and good contact of metal to the p-doped region, high current density in the region of the tunnel layers and low current density where a metal was made to n-contact.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

L'invention concerne une puce laser à semi-conducteur à émission par la tranche comprenant une zone active (14) dans laquelle un rayonnement électromagnétique est généré pendant le fonctionnement de la puce laser à semi-conducteur (1), ainsi qu'au moins une bande de contact structurée (2) qui est structurée de sorte qu'une injection de porteurs de charge dans la zone active (14) diminue en allant vers le côté de la puce laser à semi-conducteur (1) où se trouve une facette de sortie (3) de la puce laser à semi-conducteur (1).
PCT/DE2008/002131 2007-12-27 2008-12-18 Puce laser à semi-conducteur à émission par la tranche comprenant une bande de contact structurée WO2009082999A2 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE102007062788 2007-12-27
DE102007062788.4 2007-12-27
DE102008014092.9 2008-03-13
DE102008014092A DE102008014092A1 (de) 2007-12-27 2008-03-13 Kantenemittierender Halbleiterlaserchip mit einem strukturierten Kontaktstreifen

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WO2009082999A2 true WO2009082999A2 (fr) 2009-07-09
WO2009082999A3 WO2009082999A3 (fr) 2009-12-03

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8831061B2 (en) 2008-11-21 2014-09-09 Osram Opto Semiconductors Gmbh Edge emitting semiconductor laser chip
US8976829B2 (en) 2010-05-14 2015-03-10 Osram Opto Semiconductors Gmbh Edge-emitting semiconductor laser
US10833476B2 (en) * 2016-12-22 2020-11-10 Osram Oled Gmbh Surface-mountable semiconductor laser, arrangement with such a semiconductor laser and operating method for same
CN113574750A (zh) * 2018-12-31 2021-10-29 恩耐公司 用于差分电流注入的方法、系统、设备

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011055891B9 (de) * 2011-11-30 2017-09-14 Osram Opto Semiconductors Gmbh Halbleiterlaserdiode
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DE102015119146A1 (de) * 2015-11-06 2017-05-11 Osram Opto Semiconductors Gmbh Halbleiterlaser und Verfahren zum Herstellen eines Halbleiterlasers sowie Wafer
DE102016106949B4 (de) 2016-04-14 2020-07-02 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaser
DE102016125857B4 (de) 2016-12-29 2022-05-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterlaserdiode
DE102017103789B4 (de) 2017-02-23 2024-02-22 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Laserdiode
JP7369136B2 (ja) 2018-03-26 2023-10-25 ローレンス・リバモア・ナショナル・セキュリティ・エルエルシー 設計された電流密度プロファイル・ダイオードレーザ

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4441187A (en) * 1980-07-31 1984-04-03 Bouley Jean Claude A semiconductor laser light source
US4831630A (en) * 1983-04-14 1989-05-16 Xerox Corporation Phased-locked window lasers
JPH09321379A (ja) * 1996-05-29 1997-12-12 Shimadzu Corp 半導体レーザ
US5794839A (en) * 1994-08-01 1998-08-18 Nippondenso Co., Ltd. Bonding material and bonding method for electric element
JPH1168225A (ja) * 1997-08-18 1999-03-09 Fuji Xerox Co Ltd 面発光型半導体レーザ
JP2003031894A (ja) * 2001-07-19 2003-01-31 Sony Corp 半導体レーザおよびその製造方法
WO2007000614A1 (fr) * 2005-06-28 2007-01-04 Bookham Technology Plc Dispositif optoélectronique à semi-conducteurs et puissance élevée
US20070165685A1 (en) * 2003-12-22 2007-07-19 Kiminori Mizuuchi Semiconductor laser device and laser projector
EP1903646A2 (fr) * 2006-09-20 2008-03-26 JDS Uniphase Corporation Diode laser à semiconducteur comprenant une structure de fenêtre avancée
US20090067464A1 (en) * 2007-09-05 2009-03-12 Kabushiki Kaisha Toshiba Semiconductor laser device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4791646A (en) * 1985-07-31 1988-12-13 California Institute Of Technology Method for tailoring the two-dimensional spatial gain distribution in optoelectronic devices and its application to tailored gain broad area semiconductor lasers capable of high power operation with very narrow single lobed farfield patterns
JPS6396988A (ja) * 1986-10-14 1988-04-27 Sony Corp 半導体レ−ザ
US5228049A (en) * 1991-08-27 1993-07-13 Xerox Corporation Beam control in integrated diode laser and power amplifier
IES990510A2 (en) * 1998-06-18 2001-01-10 Univ Cork A semi-conductor device and a method for varying current density in an active region of a junction of the semi-conductor device
DE10061701A1 (de) * 2000-12-12 2002-06-27 Osram Opto Semiconductors Gmbh Halbleiterlaser mit lateraler Stromführung und Verfahren zu dessen Herstellung
DE10208463B4 (de) 2002-02-27 2012-04-05 Osram Opto Semiconductors Gmbh Halbleiterlaservorrichtung und Verfahren zu deren Herstellung
DE102004036963A1 (de) * 2004-05-28 2005-12-22 Osram Opto Semiconductors Gmbh Optisch gepumpte oberflächenemittierende Halbleiterlaser-Vorrichtung

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4441187A (en) * 1980-07-31 1984-04-03 Bouley Jean Claude A semiconductor laser light source
US4831630A (en) * 1983-04-14 1989-05-16 Xerox Corporation Phased-locked window lasers
US5794839A (en) * 1994-08-01 1998-08-18 Nippondenso Co., Ltd. Bonding material and bonding method for electric element
JPH09321379A (ja) * 1996-05-29 1997-12-12 Shimadzu Corp 半導体レーザ
JPH1168225A (ja) * 1997-08-18 1999-03-09 Fuji Xerox Co Ltd 面発光型半導体レーザ
JP2003031894A (ja) * 2001-07-19 2003-01-31 Sony Corp 半導体レーザおよびその製造方法
US20070165685A1 (en) * 2003-12-22 2007-07-19 Kiminori Mizuuchi Semiconductor laser device and laser projector
WO2007000614A1 (fr) * 2005-06-28 2007-01-04 Bookham Technology Plc Dispositif optoélectronique à semi-conducteurs et puissance élevée
EP1903646A2 (fr) * 2006-09-20 2008-03-26 JDS Uniphase Corporation Diode laser à semiconducteur comprenant une structure de fenêtre avancée
US20090067464A1 (en) * 2007-09-05 2009-03-12 Kabushiki Kaisha Toshiba Semiconductor laser device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8831061B2 (en) 2008-11-21 2014-09-09 Osram Opto Semiconductors Gmbh Edge emitting semiconductor laser chip
US8976829B2 (en) 2010-05-14 2015-03-10 Osram Opto Semiconductors Gmbh Edge-emitting semiconductor laser
US10833476B2 (en) * 2016-12-22 2020-11-10 Osram Oled Gmbh Surface-mountable semiconductor laser, arrangement with such a semiconductor laser and operating method for same
CN113574750A (zh) * 2018-12-31 2021-10-29 恩耐公司 用于差分电流注入的方法、系统、设备

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