WO2009066768A1 - Composition for surface antireflection films and pattern-making method - Google Patents

Composition for surface antireflection films and pattern-making method Download PDF

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Publication number
WO2009066768A1
WO2009066768A1 PCT/JP2008/071238 JP2008071238W WO2009066768A1 WO 2009066768 A1 WO2009066768 A1 WO 2009066768A1 JP 2008071238 W JP2008071238 W JP 2008071238W WO 2009066768 A1 WO2009066768 A1 WO 2009066768A1
Authority
WO
WIPO (PCT)
Prior art keywords
surface antireflection
composition
antireflection films
amines
coating
Prior art date
Application number
PCT/JP2008/071238
Other languages
French (fr)
Japanese (ja)
Inventor
Yusuke Takano
Go Noya
Yasushi Akiyama
Tsuneyuki Ohtaguro
Akihiro Koiso
Original Assignee
Az Electronic Materials(Japan)K.K
Dic Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Az Electronic Materials(Japan)K.K, Dic Corporation filed Critical Az Electronic Materials(Japan)K.K
Priority to JP2009505668A priority Critical patent/JPWO2009066768A1/en
Publication of WO2009066768A1 publication Critical patent/WO2009066768A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0276—Photolithographic processes using an anti-reflective coating
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G65/00—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule
    • C08G65/002—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from unsaturated compounds
    • C08G65/005—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from unsaturated compounds containing halogens
    • C08G65/007—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from unsaturated compounds containing halogens containing fluorine
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D171/00—Coating compositions based on polyethers obtained by reactions forming an ether link in the main chain; Coating compositions based on derivatives of such polymers
    • C09D171/02—Polyalkylene oxides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2650/00—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule
    • C08G2650/28—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule characterised by the polymer type
    • C08G2650/46—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule characterised by the polymer type containing halogen
    • C08G2650/48—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule characterised by the polymer type containing halogen containing fluorine, e.g. perfluropolyethers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/16—Nitrogen-containing compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00

Abstract

A composition for surface antireflection films, which has favorable coating properties for various resist materials, enables in a reduced dropping amount the formation of an excellent surface antireflection film suffering no problem in PED, standing wave effect or multiple reflection effect and causes no coating failure even on an uneven substrate, comprising: (A) a fluorine-containing compound represented by the following general formula (I); (B) at least one member selected from among amino alcohols, hydrocarbon group-containing amines, aromatic amines, ammonium hydroxides, polyalkylene amines, nitrogen-containing heterocyclic compounds and amine derivatives having the hydroxyl group thereof; and (C) a water-soluble polymer. By dropping a definite amount of this composition for surface antireflection films to a photoresist film of various types such as a chemically amplified resist and then coating by, for example, the spin coat method, a surface antireflection film is formed; wherein Rf represents a straight-chain or branched alkyl group having been partially or entirely fluorinated; and m represents an integer of from 0 to 10.
PCT/JP2008/071238 2007-11-22 2008-11-21 Composition for surface antireflection films and pattern-making method WO2009066768A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009505668A JPWO2009066768A1 (en) 2007-11-22 2008-11-21 Composition for surface antireflection film and pattern forming method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-302347 2007-11-22
JP2007302347 2007-11-22

Publications (1)

Publication Number Publication Date
WO2009066768A1 true WO2009066768A1 (en) 2009-05-28

Family

ID=40667590

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/071238 WO2009066768A1 (en) 2007-11-22 2008-11-21 Composition for surface antireflection films and pattern-making method

Country Status (3)

Country Link
JP (1) JPWO2009066768A1 (en)
TW (1) TW200928594A (en)
WO (1) WO2009066768A1 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009145658A (en) * 2007-12-14 2009-07-02 Az Electronic Materials Kk Surface antireflection film forming composition and pattern forming method using the same
JP2016089055A (en) * 2014-11-06 2016-05-23 三菱レイヨン株式会社 Purification method and production method of polymer for semiconductor lithography, production method of resist composition, and manufacturing method of patterned substrate
CN114035405A (en) * 2022-01-07 2022-02-11 甘肃华隆芯材料科技有限公司 Composition for preparing top anti-reflection film for photoresist, top anti-reflection film for photoresist and fluorine-containing composition

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110128904A (en) * 2019-05-10 2019-08-16 甘肃华隆芯材料科技有限公司 A kind of upper surface antireflection coating composition for photoetching
CN110045443A (en) * 2019-05-10 2019-07-23 甘肃华隆芯材料科技有限公司 A kind of composition for upper surface antireflection film
CN115873176B (en) * 2021-09-28 2023-09-26 上海新阳半导体材料股份有限公司 Bottom anti-reflection coating for DUV lithography and preparation method and application thereof

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07181685A (en) * 1993-12-21 1995-07-21 Shin Etsu Chem Co Ltd Antireflection material and pattern forming method
JPH0844066A (en) * 1994-08-01 1996-02-16 Mitsubishi Chem Corp Surface antireflection coating composition
JPH08305032A (en) * 1995-05-01 1996-11-22 Hoechst Ind Kk Composition for antireflection coating
WO2001035167A1 (en) * 1999-11-10 2001-05-17 Clariant International Ltd. Composition for antireflection coating
JP2003345026A (en) * 2002-05-24 2003-12-03 Tokyo Ohka Kogyo Co Ltd Coating liquid composition for formation of antireflection film, photoresist laminate by using the same, and method for forming photoresist pattern

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH096008A (en) * 1995-06-15 1997-01-10 Shin Etsu Chem Co Ltd Water-soluble pattern forming material
JP3384534B2 (en) * 1996-04-15 2003-03-10 信越化学工業株式会社 Anti-reflective coating material
JPH09325500A (en) * 1996-06-07 1997-12-16 Mitsubishi Chem Corp Applying composition for preventing surface reflection and formation of pattern

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07181685A (en) * 1993-12-21 1995-07-21 Shin Etsu Chem Co Ltd Antireflection material and pattern forming method
JPH0844066A (en) * 1994-08-01 1996-02-16 Mitsubishi Chem Corp Surface antireflection coating composition
JPH08305032A (en) * 1995-05-01 1996-11-22 Hoechst Ind Kk Composition for antireflection coating
WO2001035167A1 (en) * 1999-11-10 2001-05-17 Clariant International Ltd. Composition for antireflection coating
JP2003345026A (en) * 2002-05-24 2003-12-03 Tokyo Ohka Kogyo Co Ltd Coating liquid composition for formation of antireflection film, photoresist laminate by using the same, and method for forming photoresist pattern

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009145658A (en) * 2007-12-14 2009-07-02 Az Electronic Materials Kk Surface antireflection film forming composition and pattern forming method using the same
JP2016089055A (en) * 2014-11-06 2016-05-23 三菱レイヨン株式会社 Purification method and production method of polymer for semiconductor lithography, production method of resist composition, and manufacturing method of patterned substrate
CN114035405A (en) * 2022-01-07 2022-02-11 甘肃华隆芯材料科技有限公司 Composition for preparing top anti-reflection film for photoresist, top anti-reflection film for photoresist and fluorine-containing composition
WO2023131085A1 (en) * 2022-01-07 2023-07-13 甘肃华隆芯材料科技有限公司 Composition for preparing top anti-reflective film, top anti-reflective film, and fluorine-containing composition

Also Published As

Publication number Publication date
JPWO2009066768A1 (en) 2011-04-07
TW200928594A (en) 2009-07-01

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