WO2009066563A1 - スイッチ回路 - Google Patents

スイッチ回路 Download PDF

Info

Publication number
WO2009066563A1
WO2009066563A1 PCT/JP2008/070053 JP2008070053W WO2009066563A1 WO 2009066563 A1 WO2009066563 A1 WO 2009066563A1 JP 2008070053 W JP2008070053 W JP 2008070053W WO 2009066563 A1 WO2009066563 A1 WO 2009066563A1
Authority
WO
WIPO (PCT)
Prior art keywords
fet
current
gate
drain
source
Prior art date
Application number
PCT/JP2008/070053
Other languages
English (en)
French (fr)
Inventor
Yuji Takahashi
Original Assignee
Nec Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corporation filed Critical Nec Corporation
Publication of WO2009066563A1 publication Critical patent/WO2009066563A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6877—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the control circuit comprising active elements different from those used in the output circuit

Landscapes

  • Amplifiers (AREA)

Abstract

　高周波信号の通過経路となるＦＥＴ、該ＦＥＴのドレインとソース間に電位差が生じるように異なるバイアス電圧を印加するためのバイアス回路を備えたスイッチ部と、スイッチ部が備えるＦＥＴの特性を検出するための、定常動作するモニタ用ＦＥＴと、モニタ用ＦＥＴのゲート・ソース間電流及びゲート・ドレイン間電流を検出する電流検出器と、ゲート・ソース間電流とゲート・ドレイン間電流の比較結果を出力する増幅器と、増幅器の出力信号にしたがってスイッチ部が備えるバイアス回路にバイアス電圧を供給する電位生成回路とを有する。
PCT/JP2008/070053 2007-11-22 2008-11-04 スイッチ回路 WO2009066563A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-303169 2007-11-22
JP2007303169 2007-11-22

Publications (1)

Publication Number Publication Date
WO2009066563A1 true WO2009066563A1 (ja) 2009-05-28

Family

ID=40667388

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/070053 WO2009066563A1 (ja) 2007-11-22 2008-11-04 スイッチ回路

Country Status (1)

Country Link
WO (1) WO2009066563A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013094535A1 (ja) * 2011-12-20 2013-06-27 株式会社村田製作所 高周波モジュール

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11239048A (ja) * 1998-02-20 1999-08-31 Sony Corp アンテナスイッチ回路
JP2004048411A (ja) * 2002-07-12 2004-02-12 Nec Corp 高周波スイッチ
JP2006303775A (ja) * 2005-04-19 2006-11-02 Renesas Technology Corp 半導体回路装置および高周波電力増幅モジュール

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11239048A (ja) * 1998-02-20 1999-08-31 Sony Corp アンテナスイッチ回路
JP2004048411A (ja) * 2002-07-12 2004-02-12 Nec Corp 高周波スイッチ
JP2006303775A (ja) * 2005-04-19 2006-11-02 Renesas Technology Corp 半導体回路装置および高周波電力増幅モジュール

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013094535A1 (ja) * 2011-12-20 2013-06-27 株式会社村田製作所 高周波モジュール
JP5652558B2 (ja) * 2011-12-20 2015-01-14 株式会社村田製作所 高周波モジュール
US9413415B2 (en) 2011-12-20 2016-08-09 Murata Manufacturing Co., Ltd. High frequency module
US10009059B2 (en) 2011-12-20 2018-06-26 Murata Manufacturing Co., Ltd. High frequency module

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