Classifications

• • C—CHEMISTRY; METALLURGY
  • C01—INORGANIC CHEMISTRY
  • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
  • C01B6/00—Hydrides of metals including fully or partially hydrided metals, alloys or intermetallic compounds ; Compounds containing at least one metal-hydrogen bond, e.g. (GeH3)2S, SiH GeH; Monoborane or diborane; Addition complexes thereof
  • C01B6/06—Hydrides of aluminium, gallium, indium, thallium, germanium, tin, lead, arsenic, antimony, bismuth or polonium; Monoborane; Diborane; Addition complexes thereof
  • C01B6/10—Monoborane; Diborane; Addition complexes thereof
• • C—CHEMISTRY; METALLURGY
  • C01—INORGANIC CHEMISTRY
  • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
  • C01B35/00—Boron; Compounds thereof
  • C01B35/02—Boron; Borides
  • C01B35/026—Higher boron hydrides, i.e. containing at least three boron atoms
• • C—CHEMISTRY; METALLURGY
  • C01—INORGANIC CHEMISTRY
  • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
  • C01B35/00—Boron; Compounds thereof
  • C01B35/02—Boron; Borides
  • C01B35/023—Boron

Definitions

• the invention provides methods for synthesizing Bi 8 H 22 as a mixture of syn and anti isomers, commonly marketed as ClusterBoron.
• the invention further provides isotopically enriched Bi 8 H 22 prepared by the aforementioned methods.
• the invention relates the preparation of natural abundance Bi 8 H 22 , 10 B-enriched Bi 8 H 22 and "B-enriched Bi 8 H 22 .
• boron hydride compounds have become important feed stocks for boron doped P-type impurity regions in semiconductor manufacture. More particularly, high molecular weight boron hydride compounds, e.g., boron hydride compounds comprising at least a five (5) boron atom cluster, are preferred boron atom feed stocks for molecular boron implantation.
• Scaling is driven by continuous advances in lithographic process methods, allowing the definition of smaller and smaller features in the semiconductor substrate which contains the integrated circuits.
• a generally accepted scaling theory has been developed to guide chip manufacturers in the appropriate resize of all aspects of the semiconductor device design at the same time, i.e., at each technology or scaling node.
• the greatest impact of scaling on ion implantation processes is the scaling of junction depths, which requires increasingly shallow junctions as the device dimensions are decreased. This requirement for increasingly shallow junctions as integrated circuit technology scales translates into the following requirement: ion implantation energies must be reduced with each scaling step.
• the extremely shallow junctions called for by modern, sub-0.13 micron devices are termed "Ultra-Shallow Junctions" or USJs.
• boron doped P-type junctions have been hampered by difficulty in controlling the ion-implantation process using boron.
• Boron clusters or cages e.g., boranes have been investigated as a feed stock for delivering molecular boron species to a semiconductor substrate with reduced penetration. See PCT/US03/20197.
• boron hydride compounds that is boron compounds having between 5 and about 100 boron atoms are preferred for use in molecular ion implantation methods for delivering boron atoms to a semiconductor substrate.
• two or more structurally related boron hydride compounds having the same number of boron atoms but different numbers of hydrogen atoms have been isolated for various sized boron clusters.
• pentaborane(9) and pentaborane(l 1) have chemical formulas Of B 5 H 9 and B 5 H] i respectively.
• Such compounds are frequently calssified as closo (B n H n ), nido(B n H n+2 ), arachno (B n H n+4 ), hypho (B n H n+6 ), conjuncto (B n H n+8 ), and the like.
• different boron hydride species including isomers and compounds containing various amounts of hydrogen, are frequently known for boron hydrides having n boron atoms. Jemmis, et al.
• the invention is particularly useful for facile synthesis and purification of large quantities Of B 18 H 22 .
• the present invention also relates to isotopically-enriched Bi 8 H 22 .
• enriched means the modification of the boron isotopes natural abundance.
• natural abundance of the 10 B isotope ranges from 19.10 % to 20.31 % and natural abundance of the 11 B isotope ranges from 80.90 % to 79.69 %.
• a typical Bi 8 H 22 molecular ion beam contains a wide range of ion masses due to a varying number of hydrogen losses from the molecular ion as well as the varying mass due to the two naturally occurring isotopes.
• mass selection is possible in an implanter device used in semiconductor manufacture, use of isotopically enriched boron in Bi 8 H 22 can greatly reduce the spread of masses, thereby providing an increased beam current of the desired implantation species.
• 11 B and 10 B isotopically-enriched Bj 8 H 22 is also of great interest.
• the invention provides methods of synthesizing octadecaborane (B 18 H 22 ), the method comprising (a) contacting the salt of borane anion B 20 HiS 2" with an acid to produce H 2 B 20 Hi 8 »xH 2 O; and then preferably (b)removing water from the reaction vessel in the presence of a Bi 8 H 22 solubilizing solvent that remains essentially chemically inert in the system.
• the invention provides synthesizing Bi 8 H 22 by methods comprising the steps of: (a) contacting the borane anion B 20 Hi 8 2" in solvent with an acidic ion-exchange resin to produce a solution of H 2 B 20 Hi g*xH 2 O;
• Preferred methods of the invention are suitable to prepare isotopically pure Bi 8 H 22 and mixtures of structural isomers of Bi 8 H 22 . That is, the method of the invention, provide Bj 8 H 22 capable of generating a suitable molecular ion beam for ion implantation and high purity Bj 8 H 22 for use in other applications.
• a solution OfB 20 Hi 8 2" salt of the B 2 oHi 8 2" anion is contacted with an acid ion-exchange resin and the resulting solution is of H 2 B 20 Hi 8 *xH 2 O is concentrated by removal of the majority of solvent.
• any acidic ion-exchange resin capable of exchanging cations of a borane anion with protons are suitable for use in the methods of synthesizing Bi 8 H 22 provided by the invention.
• Preferred acidic ion-exchange resins include cross-linked, solvent-insoluble resins having a plurality of acidic functional groups capable of exchanging a proton for the cation of the borane salt.
• Certain preferred acidic ion-exchange resins include aromatic or partially aromatic polymers comprising a plurality of sulfonic acid residues and more preferably include such aromatic or partially aromatic polymers which are cross-linked. .
• B J 8 H 22 is produced by contacting the concentrate with a chemically inert solvent with simultaneous water removal from the system.
• a chemically inert solvent with simultaneous water removal from the system.
• conditions conducive to removal of water and other solvents of crystallization from the hydrated hydronium ion salt, H 2 B 20 Hi 8 ⁇ xH 2 O (where x is a positive real number) are also suitable to induce partial hydronium ion degradation.
• preferred degradation conditions include the use of Dean Stark trap, moisture traps, moisture scavengers or contacting the hydrated hydronium salt with one or more drying agents.
• Drying agents may include, but are not limited to molecular sieves, phosphorus pentoxide, alumina, silica, silicates and the like, or a combination thereof.
• Reaction solvents should not cause degradation to Bi 8 H 22 or any starting materials or intermediates produced during the course of the reaction. These may include, but are not limited to aromatic and arene solvents, alkane solvents, ethers, sulfones, esters, and the like.
• Reaction temperatures to promote water removal from the system range from 0 0 C to about 250 °C.
• the invention provides synthesizing Bj 8 H 22 by methods comprising the steps of:
• Preferred methods of the invention are suitable to provide B] 8 H 22 capable of generating a suitable molecular ion beam for ion implantation and high purity Bi 8 H 22 for us in other applications.
• the methods of synthesis which provide Bi 8 H 22 in high isolated yield (>50%) and with few synthetic procedures, are suitable for use in preparing isotopically enriched Bi 8 H 22 , e.g., the isotopic concentration of 10 B or 1 IB is greater than natural abundance.
• Preparation of isotopically enriched, 10 B or 11 B, Bj 8 H 22 is practical using the invention synthesis methods due to the limited number of synthetic steps, mass efficiency, and high overall synthetic yield (>65 % from B 20 Hi 8 2" ).
• Figure 2 shows use of a reaction set-up according to a preferred process of the invention.
• Figure 1 shows a specifically preferred process of the invention.
• water may be removed from the reaction mixture by a variety of methods including e.g. through the use of moisture traps, moisture scavengers, or more drying agents such as molecular sieves, phosphorus pentoxide, alumina, silica, silicates and the like, or a combination thereof.
• a Dean-Stark trap can be preferred such as illustrated in Figure 2.
• the isotopic concentration of 10 B atoms suitably may be greater than the natural abundance, e.g.
• the isotopic concentration of B atoms suitably may be greater than the natural abundance, e.g. wherein at least about 90% of the boron atoms present in the product Bj 8 H 22 are 11 B, or wherein at least about 95% of the boron atoms present in the product B) 8 H 22 are ' 1 B, or wherein at least about 99% of the boron atoms present in the product Bi 8 H 22 are 1 1 B.

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• Chemical & Material Sciences (AREA)
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• Inorganic Chemistry (AREA)
• Catalysts (AREA)
• Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)

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• 2008
  • 2008-11-03 JP JP2010532074A patent/JP5710976B2/ja not_active Expired - Fee Related
  • 2008-11-03 EP EP08844999.6A patent/EP2205524B1/de not_active Not-in-force
  • 2008-11-03 KR KR1020157025455A patent/KR20150108947A/ko not_active Application Discontinuation
  • 2008-11-03 WO PCT/US2008/012473 patent/WO2009058408A1/en active Application Filing
  • 2008-11-03 CN CN200880114573.XA patent/CN101848855B/zh not_active Expired - Fee Related
  • 2008-11-03 KR KR1020107010911A patent/KR101586868B1/ko active IP Right Grant
• 2011
  • 2011-01-18 US US13/008,724 patent/US8753600B2/en not_active Expired - Fee Related

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