WO2009057075A2 - Optoelectronic device with light directing arrangement and method of forming the arrangement - Google Patents

Optoelectronic device with light directing arrangement and method of forming the arrangement Download PDF

Info

Publication number
WO2009057075A2
WO2009057075A2 PCT/IB2008/054534 IB2008054534W WO2009057075A2 WO 2009057075 A2 WO2009057075 A2 WO 2009057075A2 IB 2008054534 W IB2008054534 W IB 2008054534W WO 2009057075 A2 WO2009057075 A2 WO 2009057075A2
Authority
WO
WIPO (PCT)
Prior art keywords
light
layers
passage
light reflecting
reflecting material
Prior art date
Application number
PCT/IB2008/054534
Other languages
French (fr)
Other versions
WO2009057075A3 (en
Inventor
Monuko Du Plessis
Ray Frederick Greyvenstein
Alfons Willi Bogalecki
Original Assignee
Insiava (Pty) Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Insiava (Pty) Ltd filed Critical Insiava (Pty) Ltd
Priority to JP2010531626A priority Critical patent/JP5550558B2/en
Priority to EP08846163.7A priority patent/EP2218113B1/en
Priority to US12/740,597 priority patent/US8729582B2/en
Priority to CN2008801235261A priority patent/CN101911320B/en
Publication of WO2009057075A2 publication Critical patent/WO2009057075A2/en
Publication of WO2009057075A3 publication Critical patent/WO2009057075A3/en
Priority to ZA2010/02944A priority patent/ZA201002944B/en
Priority to US14/278,181 priority patent/US8969112B2/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G02B6/4214—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical element having redirecting reflective means, e.g. mirrors, prisms for deflecting the radiation from horizontal to down- or upward direction toward a device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02325—Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • H01L31/1812—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System including only AIVBIV alloys, e.g. SiGe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/34—Materials of the light emitting region containing only elements of group IV of the periodic system
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • This invention relates to optoelectronic devices and more particularly to devices comprising an arrangement to direct light.
  • the invention also relates to a method of forming a light directing arrangement for an optoelectronic device.
  • One known type of light emitting device comprises a junction in a body of silicon and which junction is configured to be driven into avalanche or field emission breakdown mode thereby to emit light.
  • a problem associated with these devices is that the critical angle of internal reflection at the siHcon-oxide-air interface is determined by the refractive indexes of the materials. For silicon and air, the critical angle is only about 15.3° and taking into account the solid angles of emission, it means that only about 1.8% of the light generated by the device will leave the surface. A large proportion of this light leaves the surface of the body substantially parallel to the surface and therefore it is difficult to effectively couple this light into an input of a spaced optical fibre.
  • the speed with which semiconductor pn junction diode optical detectors operate is a function of the built-in junction capacitance.
  • the built-in pn junction capacitance may be reduced, and the detecting diode device may operate at a higher switching frequency.
  • the sensitive area of the detector is also reduced, resulting in a smaller optical signal being detected, which is not desirable.
  • an optoelectronic device comprising a body having a surface and a region of an indirect bandgap semiconductor material, a photon active region on one side of the surface, and a light directing arrangement adjacent an opposite side of the surface.
  • the photon active region may be at least one of a light emitting region and a light detecting region.
  • the indirect bandgap material may be one of Si, Ge and SiGe, but is not limited thereto, in one preferred embodiment, the material may be
  • the photon active region may comprise a pn-junction formed in the silicon material and the tight directing arrangement may circumscribe a light transmitting zone on the surface.
  • other forms of photon active regions may be used, such as silicon nano- crystals embedded in a passivation layer, for example a layer of silicon dioxide, on a region or body of indirect bandgap material.
  • the light directing arrangement may be formed integrally on the surface, for example by using a standard CMOS process.
  • the optoelectronic device may be a light emitting device wherein the pn junction, in use, is a light emitting source for transmitting light through the light transmitting zone towards the light directing arrangement.
  • the optoelectronic device may be a ph ⁇ tod ⁇ tector device wherein the pn junction, in use, is a photod ⁇ t ⁇ ctor for receiving light from the light directing arrangement through the light transmitting zone.
  • the light directing arrangement may comprise a structure of alternate layers of a light reflecting material and an insulating material forming a light reflecting sidewalt defining a passage for light, which passage is in light communication relationship with the zone and wherein a transverse cross sectional area of the passage increases in a direction away from the zone.
  • the light reflecting material may be selected from a group comprising aluminium, copper, gold and polysilicon.
  • the sidewall may comprise exposed edges of the layers of a light reflecting material linked by annular regions of a light reflecting material cladding adjacent edges of the layers of the insulating material.
  • the cladding light reflecting material may be the same as the material of the light reflecting layers.
  • At least some of the exposed edges and the annular regions may slope with an acute angle relative to a main axis of the passage. Preferably all the annular regions and the exposed edges slope relative to the main axis. In a preferred embodiment, the angle decreases in a direction away from the zone.
  • a method of forming a light directing arrangement for an optoelectronic device comprising a body having a surface and a region of an indirect bandgap semiconductor material and a photon active region on one side of a surface, the method comprising the steps of forming at least one layer of a light reflecting material on an opposite side of the surface, to circumscribe a light transmitting zone on the surface and to define a passage for light.
  • the method may comprise the step of forming more than one superimposed layers of a light reflecting material to define the passage and spacing adjacent layers from one another by intermediate layers of an insulating material.
  • the method may comprise the step of cladding edges of the intermediate layers adjacent the passage with a light reflecting material.
  • the method may comprise the steps of providing at least some of the cladded edges and edges of the layers of a light reflecting material adjacent the passage with a slope at an acute angle relative to a main axis of the passage.
  • the arrangement may be formed by utilising conventional CMOS technology and depositing on the surface, a first of the layers of the light reflecting material, separating the first layer of a light reflecting material from a second of the layers of a light reflecting material by one of said intermediate layers, utilising a via definition to form a via between the first and second layers and to clad an edge of the intermediate layer adjacent the passage, and forming a slope for the via and edges of the layers of a light reflecting material respectively.
  • the slope for the via and the slopes for the layers of a light reflecting material may be arranged to provide the passage with a profile in the form of a parabola, an angle of the slope for the via and the slopes for the edges of the layers of a light reflecting material may be constant, and distances between a main axis of the passage and the slopes may be selected such as to minimize a difference between said angle and a tangent of the parabola at a corresponding location on the parabola.
  • the slope for the via and the slope of the layers of a light reflecting material may also be arranged to provide the passage with a profile in the form of a parabola, but an angle of the slope for the via and respective angles for the edges of the layers of a light reflecting material may vary, so as to approach a tangent of the parabola at a corresponding location on the parabola.
  • figure 1 is a diagrammatic representation of a prior art light emitting device comprising a light source in the form of a pn-junction in a body of silicon
  • figure 2 is a diagrammatic sectional view through a first embodiment of an optoelectronic device according to the invention in the form of a light emitting device comprising an emitted light directing arrangement
  • figure 3 is a diagram illustrating the relationship between certain dimensions and angles of one embodiment of the arrangement
  • figure 4 is a diagrammatic view illustrating a plurality of light reflecting layers forming part of a emitted light directing structure
  • figure 5 is a more detailed sectional view of the structure
  • figure 6(a) and (b) are views illustrating the formation of sloped surfaces on a sidewall of a passage for light defined by the structure
  • figure 7 is a more detailed sectional view of the structure
  • figure 8 is a diagrammatic illustration of another embodiment of the structure
  • figure 9 is a diagrammatic representation of a prior art photodet ⁇ ctor
  • figure 10 is a diagrammatic sectional view through a second embodiment of an optoelectronic device according to the invention in the form of a photodetector comprising an impinging light directing arrangement.
  • the emitted light directing arrangement serves to focus the light along a passage 24, away from the surface, so that the light may more effectively be coupled into the input 18 of optical fibre 19.
  • a passivation layer on the region 14 is not necessarily shown. It will be appreciated by those skilled in the art that a passivation layer may be provided and that the aforementioned surface would then be a surface of the layer remote from the region 14.
  • the emitted light directing arrangement is integrally formed on the aforementioned opposite side of the surface as will hereinafter be described in more detail.
  • the arrangement 22 comprises a structure 26 of alternate layers 28.1 to 28.4 of a light reflecting material and layers 30.1 to 30.4 of an insulating material.
  • the light reflecting material may be selected from a group comprising aluminium, copper, gold and polysilicon.
  • the insulating material may be an oxide.
  • the structure 26 comprises a substantially cup shaped sidewall 32 circumscribing a light transmitting zone 34 on the surface 16.
  • the 32 defines the passage 24 having a main axis 36 extending through the zone 34 and perpendicular to the surface.
  • the passage 24 is in light communication relationship with the zone.
  • the metal conductor layers may be used to approximate the structure curvature.
  • the reflector structure will be as shown in figure 4.
  • the average heights y,, y 2 , y 3 and y 4 of the metal layer 28.1 to 28.4 above the surface 16 are fixed by the processing sequence.
  • emission angle ⁇ see figure 3 ⁇
  • the corresponding value of lateral dimension X n can be calculated for the given y n .
  • interconnect vias 40 which conventionally facilitate connections between adjacent metal layers, are used.
  • the metal layers 28.1 to 28.4 fully cover and fill the vias 40.
  • an additional layer is used as reflective layer, namely a polysilicon layer 42.
  • the metal layer 28.1 makes contact to the polysilicon layer 42 through a metal making contact 54.
  • CMOS layout rules may be violated.
  • a rule to violate is the mask definition of the metal etch after via formation and metal deposition. Referring to figure 6(a), this may be done by causing the metal mask 50 not fully to cover the via definition 40, but only partially to cover the via in a region thereof away from the passage. This can be done, since no electrical function will be performed by the specific partially covered via, but only a mechanical/optical function.
  • the remaining metal will have a non-vertical slope 52 at an angle ⁇ relative to the vertical or the axis 36 and will thus cause reflection of impinging light towards the vertical.
  • the angle ⁇ may decrease in a direction away from the surface 16.
  • figure 7 the structure 22 resulting from the procedure hereinbefore described is shown. It is expected that In this case, much of the available optical signal will be directed substantially towards the vertical, but perhaps not in a narrow beam.
  • this structure may give better performance if the exit angle is small.
  • FIG 8 another embodiment of the structure 22 is shown.
  • Some standard semiconductor processing technologies dictate fixed metal and via heights and a constant angle for the slopes on the inside edges of the layers forming the sidewall 32, which leaves as only design freedom, the horizontal distance x from the axis 36 to the inside edge of the layers.
  • Figure 8 shows that the sloped inside edge of polysilicon layer 52, contact 54, metal layers 28.1 to 28.4 and via interconnect layers 40 can be aligned to the parabola P, so that they reflect rays from the light source 12 at the parabola's focus vertically upwards parallel to the parabola's axis of symmetry 36 passing through the focus.
  • the inside edges of the layers may be provided with increasing slopes, in other words with decreasing angles ⁇ ⁇ see figure 6(b)), so that the angles of the edges approach a tangent of the parabola at a corresponding location on the parabola.
  • the edges of the layers may be formed substantially to coincide with the tangent of the parabola at the relevant point.
  • the passage 24 may be filled with a translucent, preferably transparent material, such as silicon dioxide.
  • Figure 9 shows a prior art or conventional photodetector 60, collecting light being emitted from an optical fibre 64.
  • a relatively large pn junction area 62 is needed to collect a majority of the optical signal.
  • the speed with which semiconductor pn junction diode optical detectors operate is a function of the built-in junction capacitance.
  • the built-in pn junction capacitance can be reduced, and the detecting diode device can operate at a higher switching frequency.
  • the sensitive area of the detector is also reduced, resulting in a smaller optical signal being detected, which is not satisfactory.
  • a light directing arrangement as hereinbefore described in the form of a collector 66 for impinging light is provided for the photodetector 70.
  • the optical sensitive area 63 can still be fairly large, but the detector pn junction 62 can be made small. This means that substantially the same amount of optical energy can be detected at a larger operating frequency.
  • the integrated CMOS technology collector 66 concentrates substantially the same optical signal power onto a much smaller pn junction diode detector 62, resulting in a higher frequency of operation due to the smaller detector capacitance.

Abstract

An optoelectronic device (20) comprises a body ( 14) of an indirect bandgap semiconductor material having a surface (16) and a photon active region (12) on one side of the surface. A fight directing arrangement (22) is formed integrally with the body on an opposite side of the surface.

Description

Optoelectronic device with fight directing arrangement and method of forming the arrangement INTRODUCTION AND BACKGROUND
This invention relates to optoelectronic devices and more particularly to devices comprising an arrangement to direct light. The invention also relates to a method of forming a light directing arrangement for an optoelectronic device.
One known type of light emitting device comprises a junction in a body of silicon and which junction is configured to be driven into avalanche or field emission breakdown mode thereby to emit light. A problem associated with these devices is that the critical angle of internal reflection at the siHcon-oxide-air interface is determined by the refractive indexes of the materials. For silicon and air, the critical angle is only about 15.3° and taking into account the solid angles of emission, it means that only about 1.8% of the light generated by the device will leave the surface. A large proportion of this light leaves the surface of the body substantially parallel to the surface and therefore it is difficult to effectively couple this light into an input of a spaced optical fibre. It is also known that the speed with which semiconductor pn junction diode optical detectors operate, is a function of the built-in junction capacitance. By reducing the size of the detecting pn junction, the built-in pn junction capacitance may be reduced, and the detecting diode device may operate at a higher switching frequency. However, at the same time, the sensitive area of the detector is also reduced, resulting in a smaller optical signal being detected, which is not desirable.
OBJECT OF THE INVENTION
Accordingly, it is an object of the present invention to provide an optoelectronic device and method of forming a light directing arrangement for the device with which the applicant believes the aforementioned disadvantages may at least be alleviated.
SUMMARY OF THE INVENTION
According to the invention there is provided an optoelectronic device comprising a body having a surface and a region of an indirect bandgap semiconductor material, a photon active region on one side of the surface, and a light directing arrangement adjacent an opposite side of the surface. The photon active region may be at least one of a light emitting region and a light detecting region.
The indirect bandgap material may be one of Si, Ge and SiGe, but is not limited thereto, in one preferred embodiment, the material may be
Si, the photon active region may comprise a pn-junction formed in the silicon material and the tight directing arrangement may circumscribe a light transmitting zone on the surface. In other embodiments, other forms of photon active regions may be used, such as silicon nano- crystals embedded in a passivation layer, for example a layer of silicon dioxide, on a region or body of indirect bandgap material.
The light directing arrangement may be formed integrally on the surface, for example by using a standard CMOS process.
In some embodiments, the optoelectronic device may be a light emitting device wherein the pn junction, in use, is a light emitting source for transmitting light through the light transmitting zone towards the light directing arrangement.
In other embodiments the optoelectronic device may be a phσtodθtector device wherein the pn junction, in use, is a photodθtβctor for receiving light from the light directing arrangement through the light transmitting zone.
The light directing arrangement may comprise a structure of alternate layers of a light reflecting material and an insulating material forming a light reflecting sidewalt defining a passage for light, which passage is in light communication relationship with the zone and wherein a transverse cross sectional area of the passage increases in a direction away from the zone.
The light reflecting material may be selected from a group comprising aluminium, copper, gold and polysilicon.
The sidewall may comprise exposed edges of the layers of a light reflecting material linked by annular regions of a light reflecting material cladding adjacent edges of the layers of the insulating material. The cladding light reflecting material may be the same as the material of the light reflecting layers.
At least some of the exposed edges and the annular regions may slope with an acute angle relative to a main axis of the passage. Preferably all the annular regions and the exposed edges slope relative to the main axis. In a preferred embodiment, the angle decreases in a direction away from the zone.
According to another aspect of the invention, there is provided a method of forming a light directing arrangement for an optoelectronic device comprising a body having a surface and a region of an indirect bandgap semiconductor material and a photon active region on one side of a surface, the method comprising the steps of forming at least one layer of a light reflecting material on an opposite side of the surface, to circumscribe a light transmitting zone on the surface and to define a passage for light.
The method may comprise the step of forming more than one superimposed layers of a light reflecting material to define the passage and spacing adjacent layers from one another by intermediate layers of an insulating material.
The method may comprise the step of cladding edges of the intermediate layers adjacent the passage with a light reflecting material. The method may comprise the steps of providing at least some of the cladded edges and edges of the layers of a light reflecting material adjacent the passage with a slope at an acute angle relative to a main axis of the passage.
The arrangement may be formed by utilising conventional CMOS technology and depositing on the surface, a first of the layers of the light reflecting material, separating the first layer of a light reflecting material from a second of the layers of a light reflecting material by one of said intermediate layers, utilising a via definition to form a via between the first and second layers and to clad an edge of the intermediate layer adjacent the passage, and forming a slope for the via and edges of the layers of a light reflecting material respectively.
In one form of the method the slope for the via and the slopes for the layers of a light reflecting material may be arranged to provide the passage with a profile in the form of a parabola, an angle of the slope for the via and the slopes for the edges of the layers of a light reflecting material may be constant, and distances between a main axis of the passage and the slopes may be selected such as to minimize a difference between said angle and a tangent of the parabola at a corresponding location on the parabola. Jn another form of the method, the slope for the via and the slope of the layers of a light reflecting material may also be arranged to provide the passage with a profile in the form of a parabola, but an angle of the slope for the via and respective angles for the edges of the layers of a light reflecting material may vary, so as to approach a tangent of the parabola at a corresponding location on the parabola.
BRIEF DESCRIPTION OF THE ACCOMPANYING DIAGRAMS The invention will now further be described, by way of example only, with reference to the accompanying diagrams wherein: figure 1 is a diagrammatic representation of a prior art light emitting device comprising a light source in the form of a pn-junction in a body of silicon; figure 2 is a diagrammatic sectional view through a first embodiment of an optoelectronic device according to the invention in the form of a light emitting device comprising an emitted light directing arrangement; figure 3 is a diagram illustrating the relationship between certain dimensions and angles of one embodiment of the arrangement; 3
figure 4 is a diagrammatic view illustrating a plurality of light reflecting layers forming part of a emitted light directing structure; figure 5 is a more detailed sectional view of the structure; figure 6(a) and (b) are views illustrating the formation of sloped surfaces on a sidewall of a passage for light defined by the structure; figure 7 is a more detailed sectional view of the structure; figure 8 is a diagrammatic illustration of another embodiment of the structure; figure 9 is a diagrammatic representation of a prior art photodetβctor; and figure 10 is a diagrammatic sectional view through a second embodiment of an optoelectronic device according to the invention in the form of a photodetector comprising an impinging light directing arrangement.
DESCRIPTION OF A PREFERRED EMBODIMENT OF THE INVENTION By way of background, a light radiation pattern of a known silicon light emitting device 10 is shown in figure 1. As stated in the introduction of this specification, the critical angle β of internal reflection at the silicon-oxide-air interface is only about 15.3° . As a result, only about 1.8% of the light generated at a junction 12 in the body of silicon 14 leaves the surface 16 of the body. A large proportion of that light leaves the surface in a direction substantially parallel to the surface 16 and therefore it is difficult to couple that light into an input 18 of a spaced optical fibre 19.
Referring to figure 2, an optoelectronic device according to the invention in the form of a light emitting device 20 comprises a body having a surface 16 and a region 14 of an indirect bandgap material such as Si, Ge and SiGe, a light emitting source 12 on one side of the surface and an emitted light directing arrangement 22 adjacent an opposite side of the surface 16. The emitted light directing arrangement serves to focus the light along a passage 24, away from the surface, so that the light may more effectively be coupled into the input 18 of optical fibre 19.
In the embodiments shown in this specification, a passivation layer on the region 14 is not necessarily shown. It will be appreciated by those skilled in the art that a passivation layer may be provided and that the aforementioned surface would then be a surface of the layer remote from the region 14. The emitted light directing arrangement is integrally formed on the aforementioned opposite side of the surface as will hereinafter be described in more detail. The arrangement 22 comprises a structure 26 of alternate layers 28.1 to 28.4 of a light reflecting material and layers 30.1 to 30.4 of an insulating material. The light reflecting material may be selected from a group comprising aluminium, copper, gold and polysilicon. The insulating material may be an oxide.
The structure 26 comprises a substantially cup shaped sidewall 32 circumscribing a light transmitting zone 34 on the surface 16. The wall
32 defines the passage 24 having a main axis 36 extending through the zone 34 and perpendicular to the surface. The passage 24 is in light communication relationship with the zone.
From figure 3 it is derived that at a reflection point R on the sidewall
32, the relationship between the angles is
Λ e θ 90 + θ γ = 45 + — - = degrees
with the tangent of the structure at the point R given by
Slope ~
Figure imgf000011_0001
Using the above equations, the physical shape of the structure 26 at points on the wall 32 may be computed.
In a standard CMOS technology, the metal conductor layers (normally aluminium) may be used to approximate the structure curvature. In the case where four metal layers 28.1 to 28.4 are present, the reflector structure will be as shown in figure 4. In the CMOS technology, the average heights y,, y2, y3 and y4 of the metal layer 28.1 to 28.4 above the surface 16 are fixed by the processing sequence. For each value of emission angle θ (see figure 3}, the corresponding value of lateral dimension Xn can be calculated for the given yn. The top metal layer 28.4 determines the maximum emission angle to be reflected, depending on the application, and from this value of Xn {n = 4 in the example of figure 4) the other lateral dimensions X1 to X3 can be determined.
Referring to figure 5, to increase the reflection area, and to prevent light from entering the oxide interfaces 30.1 to 30.4 between the metal layers 28.1 to 28.4, interconnect vias 40, which conventionally facilitate connections between adjacent metal layers, are used. In the structure 26 shown in figure 5, all layout rules are followed, that is, the metal layers 28.1 to 28.4 fully cover and fill the vias 40. In figure 5 an additional layer is used as reflective layer, namely a polysilicon layer 42. The metal layer 28.1 makes contact to the polysilicon layer 42 through a metal making contact 54.
To obtain an improved focussing action, the edges of the metal layers
28.1 to 28.4 adjacent the passage 24 and of the metal 40 filling the vias to clad the adjacent edges of isolation layers 30.1 to 30.4, may be given a slope.
In order to achieve a non-vertical slope of the reflecting surface, the
CMOS layout rules may be violated. A rule to violate is the mask definition of the metal etch after via formation and metal deposition. Referring to figure 6(a), this may be done by causing the metal mask 50 not fully to cover the via definition 40, but only partially to cover the via in a region thereof away from the passage. This can be done, since no electrical function will be performed by the specific partially covered via, but only a mechanical/optical function.
Referring to figure 6{b), after the etching of the metal, the remaining metal will have a non-vertical slope 52 at an angle ε relative to the vertical or the axis 36 and will thus cause reflection of impinging light towards the vertical. It will be appreciated that the procedure described and illustrated with reference to figures 6(a) an (b) could be used for all metal layers 28.1 to 28.4, as well as the metal making contact 54 to the polysilicon layer. The angle ε may decrease in a direction away from the surface 16.
In figure 7 the structure 22 resulting from the procedure hereinbefore described is shown. It is expected that In this case, much of the available optical signal will be directed substantially towards the vertical, but perhaps not in a narrow beam.
It will be appreciated that due to the relatively steep slope 52 of the metal edges, this structure may give better performance if the exit angle is small.
In figure 8, another embodiment of the structure 22 is shown. The structure defines a passage 24 with a profile substantially in the form of a parabola P and the light source 12 is at a focal point. Setting the focal point at the origin of the Cartesian coordinate system (0; 0), renders for the parabola y = ax2 - 1 /4a. Some standard semiconductor processing technologies dictate fixed metal and via heights and a constant angle for the slopes on the inside edges of the layers forming the sidewall 32, which leaves as only design freedom, the horizontal distance x from the axis 36 to the inside edge of the layers.
Figure 8 shows that the sloped inside edge of polysilicon layer 52, contact 54, metal layers 28.1 to 28.4 and via interconnect layers 40 can be aligned to the parabola P, so that they reflect rays from the light source 12 at the parabola's focus vertically upwards parallel to the parabola's axis of symmetry 36 passing through the focus.
Varying the parabola variable a and the distances xp, xc, xm1 , xv1 , xm2, xv2, xm3, xv3 and xm4 from the parabola's axis of symmetry 36, allows finding optimum distances such that a difference between the constant angle on the inside edge and a tangent of the parabola at a corresponding location on the parabola is minimized.
The above procedure is accomplishable while still keeping each metal edge further from the parabola's axis of symmetry 36 than the layer right underneath it (i.e. xp < xc < xmi < xv1 < xm2 < xv2 < xm3 < xv3 < xm4). The steeper the metaf edges are, the larger the parabola variable a, and the narrower the parabola and resultantly exiting light beam will be.
In other embodiments, it may be possible to provide the inside edges of the layers with increasing slopes, in other words with decreasing angles ε {see figure 6(b)), so that the angles of the edges approach a tangent of the parabola at a corresponding location on the parabola. In such a case, the edges of the layers may be formed substantially to coincide with the tangent of the parabola at the relevant point.
The passage 24 may be filled with a translucent, preferably transparent material, such as silicon dioxide.
Figure 9 shows a prior art or conventional photodetector 60, collecting light being emitted from an optical fibre 64. A relatively large pn junction area 62 is needed to collect a majority of the optical signal. As stated in the introduction of this specification, it is known that the speed with which semiconductor pn junction diode optical detectors operate, is a function of the built-in junction capacitance. By reducing the size of the detecting pn junction 62, the built-in pn junction capacitance can be reduced, and the detecting diode device can operate at a higher switching frequency. However, at the same time, the sensitive area of the detector is also reduced, resulting in a smaller optical signal being detected, which is not satisfactory.
Referring to figure 10, a light directing arrangement as hereinbefore described in the form of a collector 66 for impinging light is provided for the photodetector 70. Using the collector 66, the optical sensitive area 63 can still be fairly large, but the detector pn junction 62 can be made small. This means that substantially the same amount of optical energy can be detected at a larger operating frequency. More particularly, the integrated CMOS technology collector 66 concentrates substantially the same optical signal power onto a much smaller pn junction diode detector 62, resulting in a higher frequency of operation due to the smaller detector capacitance.

Claims

1. An optoelectronic device comprising a body having a surface and a region of an indirect bandgap semiconductor material, a photon active region on one side of the surface, and a light directing arrangement adjacent an opposite side of the surface.
2. An optoelectronic device as claimed in claim 1 wherein the indirect bandgap semiconductor material is silicon, wherein the photon active region comprises a pn junction formed in the region of an indirect bandgap material and wherein the light directing arrangement circumscribes a light transmitting zone on the surface.
3. An optoelectronic device as claimed in claim 1 or claim 2 wherein the light directing arrangement is formed integrally on the surface.
4. An optoelectronic device as claimed in any one of claims 2 and 3 wherein the pn junction, in use, is a Hght emitting source for transmitting light through the light transmitting zone towards the light directing arrangement.
5. An optoelectronic device as claimed in any one of claims 2 and 3 wherein the pn junction, in use, is a photodetector for receiving light from the light directing arrangement through the light transmitting zone.
6. An optoelectronic device as claimed in any one of claims 2 to 5 wherein the light directing arrangement comprises a structure of alternate layers of a light reflecting material and an insulating material forming a light reflecting sidewall defining a passage for light, which passage is in light communication relationship with the zone and wherein a transverse cross sectional area of the passage increases in a direction away from the zone.
7. An optoelectronic device as claimed in claim 6 wherein the light reflecting material is selected from a group comprising aluminium, copper, gold and polysilicon.
8. An optoelectronic device as claimed in any one of claims 6 and 7 wherein the sidewall comprises exposed edges of the layers of a light reflecting material linked by annular regions of a light reflecting material cladding adjacent edges of the insulating material.
9. An optoelectronic device as claimed in claim 8 wherein at least some of the exposed edges and the annular regions slope with an acute angle relative to a main axis of the passage.
10. An optoelectronic device as claimed in claim 9 wherein the angle decreases in a direction away from the zone.
1 1. A method of forming a light directing arrangement for an optoelectronic device comprising a body having a surface and a region of an indirect bandgap semiconductor material and a photon active region on one side of the surface, the method comprising the steps of forming at least one layer of a light reflecting material on an opposite side of the surface, to circumscribe a light transmitting zone on the surface and to define a passage for light.
12. A method as claimed in claim 1 1 comprising the step of forming more than one superimposed layers of a light reflecting material to define the passage and spacing adjacent layers from one another by intermediate layers of an insulating material.
13. A method as claimed in claim 12 comprising the step of cladding edges of the intermediate layers adjacent the passage with a light reflecting material.
14. A method as claimed in claim 13 comprising the step of providing at least some of the cladded edges and edges of the layers of a light reflecting materia! adjacent the passage with a slope at an acute angle relative to a main axis of the passage.
15. A method as claimed in claim 12 wherein the arrangement is formed by utilising conventional CMOS technology and depositing on the surface, a first of the layers of the light reflecting material, separating the first layer of a light reflecting material from a second of the layers of a light reflecting material by one of said intermediate layers, utilising a via definition to form a via between the first and second layers and to clad an edge of the intermediate layer adjacent the passage, and forming a slope for the via and edges of the layers of a light reflecting material respectively.
16. A method as claimed in claim 15 wherein the slope for the via and the slopes for the layers of a light reflecting material are arranged to provide the passage with a profile in the form of a parabola, wherein an angle of the slope for the via and the slopes for the edges of the layers of a light reflecting material is constant, and wherein distances between a main axis of the passage and the slopes are selected such as to minimize a difference between said angle and a tangent of the parabola at a corresponding location on the parabola.
17. A method as claimed in claim 15 wherein the slope for the via and the slope of the layers of a light reflecting material are arranged to provide the passage with a profile in the form of a parabola, wherein an angle of the slope for the via and respective angles for the edges of the layers of a light reflecting material vary, so as to approach a tangent of the parabola at a corresponding location on the parabola.
PCT/IB2008/054534 2007-11-01 2008-10-31 Optoelectronic device with light directing arrangement and method of forming the arrangement WO2009057075A2 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2010531626A JP5550558B2 (en) 2007-11-01 2008-10-31 Optoelectronic device having a light guiding mechanism and method for forming the mechanism
EP08846163.7A EP2218113B1 (en) 2007-11-01 2008-10-31 Optoelectronic device with light directing arrangement and method of forming the arrangement
US12/740,597 US8729582B2 (en) 2007-11-01 2008-10-31 Optoelectronic device with light directing arrangement and method of forming the arrangement
CN2008801235261A CN101911320B (en) 2007-11-01 2008-10-31 Optoelectronic device with light directing arrangement and method of forming the arrangement
ZA2010/02944A ZA201002944B (en) 2007-11-01 2010-04-28 Optoelectronic device with light directing arrangement and method of forming the arrangement
US14/278,181 US8969112B2 (en) 2007-11-01 2014-05-15 Optoelectronic device with light directing arrangement and method of forming the arrangement

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
ZA200709436 2007-11-01
ZA2007/09436 2007-11-01

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US12/740,597 A-371-Of-International US8729582B2 (en) 2007-11-01 2008-10-31 Optoelectronic device with light directing arrangement and method of forming the arrangement
US14/278,181 Division US8969112B2 (en) 2007-11-01 2014-05-15 Optoelectronic device with light directing arrangement and method of forming the arrangement

Publications (2)

Publication Number Publication Date
WO2009057075A2 true WO2009057075A2 (en) 2009-05-07
WO2009057075A3 WO2009057075A3 (en) 2010-03-18

Family

ID=40591580

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2008/054534 WO2009057075A2 (en) 2007-11-01 2008-10-31 Optoelectronic device with light directing arrangement and method of forming the arrangement

Country Status (7)

Country Link
US (2) US8729582B2 (en)
EP (1) EP2218113B1 (en)
JP (1) JP5550558B2 (en)
CN (1) CN101911320B (en)
TW (1) TWI467789B (en)
WO (1) WO2009057075A2 (en)
ZA (1) ZA201002944B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015527745A (en) * 2012-08-23 2015-09-17 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ Photoelectric device

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5676273B2 (en) * 2008-01-21 2015-02-25 インシアヴァ （ピーテーワイ） リミテッド Semiconductor light-emitting device using punch-through effect
CA2713070C (en) * 2008-02-01 2016-07-26 Insiava (Pty) Limited Semiconductor light emitting device comprising heterojunction
US8237832B2 (en) * 2008-05-30 2012-08-07 Omnivision Technologies, Inc. Image sensor with focusing interconnections
CN102292834A (en) 2008-12-15 2011-12-21 因西亚瓦(控股)有限公司 Silicon light emitting device utilising reach-through effects
JP6008742B2 (en) 2010-01-22 2016-10-19 インシアヴァ （ピーテーワイ） リミテッド Silicon light emitting device and method of manufacturing the device
US9515227B2 (en) 2011-09-16 2016-12-06 Insiava (Pty) Limited Near infrared light source in bulk silicon
EP3045896B1 (en) 2015-01-16 2023-06-07 Personal Genomics, Inc. Optical sensor with light-guiding feature
KR102385941B1 (en) * 2015-06-15 2022-04-13 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 Light Emitting Device Package
KR20210023459A (en) * 2019-08-23 2021-03-04 에스케이하이닉스 주식회사 Image sensing device

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2326525A (en) * 1997-05-20 1998-12-23 Hewlett Packard Co Concentrators for light sensor arrays
US20030063204A1 (en) * 2001-08-31 2003-04-03 Canon Kabushiki Kaisha Image pickup apparatus
EP1473780A2 (en) * 2003-04-28 2004-11-03 STMicroelectronics, Inc. Microlens integration
US20050274871A1 (en) * 2004-06-10 2005-12-15 Jin Li Method and apparatus for collecting photons in a solid state imaging sensor
US20060001055A1 (en) * 2004-02-23 2006-01-05 Kazuhiko Ueno Led and fabrication method of same
US20060115230A1 (en) * 2002-12-13 2006-06-01 Tetsuya Komoguchi Solid-state imaging device and production method therefor
US20070145394A1 (en) * 2005-12-22 2007-06-28 Tatsuo Shimizu Semiconductor light-emitting material and light emitting device
US20070200054A1 (en) * 2006-02-24 2007-08-30 Tower Semiconductor Ltd. Via wave guide with curved light concentrator for image sensing devices
US20080079106A1 (en) * 2006-10-02 2008-04-03 Matsushita Electric Industrial Co., Ltd. Solid-state imaging device

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5994720A (en) 1996-03-04 1999-11-30 University Of Pretoria Indirect bandgap semiconductor optoelectronic device
US6111271A (en) 1996-03-28 2000-08-29 University Of Pretoria Optoelectronic device with separately controllable carrier injection means
JPH11345999A (en) * 1998-06-01 1999-12-14 Matsushita Electron Corp Photoelectric conversion device
EP1181724A1 (en) * 1998-11-20 2002-02-27 California Institute Of Technology Wavelength-insensitive radiation coupling for multi-quantum well sensor based on intersubband absorption
JP3827909B2 (en) * 2000-03-21 2006-09-27 シャープ株式会社 Solid-state imaging device and manufacturing method thereof
JP2002043632A (en) * 2000-07-21 2002-02-08 Citizen Electronics Co Ltd Light emitting diode
JP4120543B2 (en) * 2002-12-25 2008-07-16 ソニー株式会社 Solid-state imaging device and manufacturing method thereof
JP3803339B2 (en) * 2003-01-10 2006-08-02 松下電器産業株式会社 Semiconductor laser device
US6861686B2 (en) * 2003-01-16 2005-03-01 Samsung Electronics Co., Ltd. Structure of a CMOS image sensor and method for fabricating the same
JP4548702B2 (en) * 2003-10-02 2010-09-22 キヤノン株式会社 Imaging apparatus and imaging system
US7119319B2 (en) * 2004-04-08 2006-10-10 Canon Kabushiki Kaisha Solid-state image sensing element and its design support method, and image sensing device
JP4910079B2 (en) * 2004-05-07 2012-04-04 光照 木村 Terahertz wave generating diode and terahertz wave radiation device using the same
KR100689885B1 (en) * 2004-05-17 2007-03-09 삼성전자주식회사 The CMOS image sensor for improving the photo sensitivity and and method thereof
JP2006005091A (en) * 2004-06-16 2006-01-05 Ngk Spark Plug Co Ltd Package for light emitting element
US7193289B2 (en) * 2004-11-30 2007-03-20 International Business Machines Corporation Damascene copper wiring image sensor
JP2006179767A (en) * 2004-12-24 2006-07-06 Sharp Corp Remote control light receiving unit and electronic device using the same
US7683407B2 (en) * 2005-08-01 2010-03-23 Aptina Imaging Corporation Structure and method for building a light tunnel for use with imaging devices
CN101399305B (en) * 2007-09-29 2012-11-21 展晶科技(深圳)有限公司 Encapsulation construction and manufacturing method for photoelectric element
US8362679B2 (en) 2007-10-08 2013-01-29 Insiava (Pty) Limited Silicon light emitting device with carrier injection
JP5676273B2 (en) 2008-01-21 2015-02-25 インシアヴァ （ピーテーワイ） リミテッド Semiconductor light-emitting device using punch-through effect
CA2713070C (en) 2008-02-01 2016-07-26 Insiava (Pty) Limited Semiconductor light emitting device comprising heterojunction
CN102292834A (en) 2008-12-15 2011-12-21 因西亚瓦(控股)有限公司 Silicon light emitting device utilising reach-through effects
WO2010086798A1 (en) 2009-01-27 2010-08-05 Insiava (Pty) Limited Microchip-based moems and waveguide device
JP6008742B2 (en) 2010-01-22 2016-10-19 インシアヴァ （ピーテーワイ） リミテッド Silicon light emitting device and method of manufacturing the device

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2326525A (en) * 1997-05-20 1998-12-23 Hewlett Packard Co Concentrators for light sensor arrays
US20030063204A1 (en) * 2001-08-31 2003-04-03 Canon Kabushiki Kaisha Image pickup apparatus
US20060115230A1 (en) * 2002-12-13 2006-06-01 Tetsuya Komoguchi Solid-state imaging device and production method therefor
EP1473780A2 (en) * 2003-04-28 2004-11-03 STMicroelectronics, Inc. Microlens integration
US20060001055A1 (en) * 2004-02-23 2006-01-05 Kazuhiko Ueno Led and fabrication method of same
US20050274871A1 (en) * 2004-06-10 2005-12-15 Jin Li Method and apparatus for collecting photons in a solid state imaging sensor
US20070145394A1 (en) * 2005-12-22 2007-06-28 Tatsuo Shimizu Semiconductor light-emitting material and light emitting device
US20070200054A1 (en) * 2006-02-24 2007-08-30 Tower Semiconductor Ltd. Via wave guide with curved light concentrator for image sensing devices
US20080079106A1 (en) * 2006-10-02 2008-04-03 Matsushita Electric Industrial Co., Ltd. Solid-state imaging device

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
DU PLESSIS M ET AL: "Low-voltage light emitting devices in silicon IC technology" PROCEEDINGS OF THE IEEE INTERNATIONAL SYMPOSIUM ON INDUSTRIAL ELECTRONICS (IEEE CAT. NO.05TH8778), vol. 3, 2005, pages 1145-1149, XP002563006 IEEE PISCATAWAY, NJ, USA ISBN: 0-7803-8738-4 *
SNYMAN L W ET AL: "Optical sources, integrated optical detectors, and optical waveguides in standard silicon CMOS integrated circuitry" PROCEEDINGS OF THE SPIE - THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING SPIE-INT. SOC. OPT. ENG USA, vol. 3953, 2000, pages 20-36, XP002563005 ISSN: 0277-786X *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015527745A (en) * 2012-08-23 2015-09-17 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ Photoelectric device
US9606231B2 (en) 2012-08-23 2017-03-28 Osram Opto Semiconductors Gmbh Optoelectronic apparatus

Also Published As

Publication number Publication date
WO2009057075A3 (en) 2010-03-18
EP2218113A2 (en) 2010-08-18
TW200943569A (en) 2009-10-16
JP2011503842A (en) 2011-01-27
US8969112B2 (en) 2015-03-03
CN101911320A (en) 2010-12-08
EP2218113B1 (en) 2016-04-27
ZA201002944B (en) 2010-12-29
US8729582B2 (en) 2014-05-20
US20140248728A1 (en) 2014-09-04
JP5550558B2 (en) 2014-07-16
TWI467789B (en) 2015-01-01
CN101911320B (en) 2012-11-21
US20110042701A1 (en) 2011-02-24

Similar Documents

Publication Publication Date Title
US8729582B2 (en) Optoelectronic device with light directing arrangement and method of forming the arrangement
CN109841641B (en) Semiconductor device and method for forming image sensor integrated chip
TWI533443B (en) Lateral light shield in backside illuminated imaging sensors
US9219177B2 (en) Photo detector and integrated circuit
US10847664B2 (en) Optical package and method of producing an optical package
JP2011503842A5 (en)
CN109863509A (en) Photoelectric sensor and preparation method thereof
TW201338146A (en) Prevention of light leakage in backside illuminated imaging sensors
KR102129706B1 (en) Micro-optics and optoelectronics module including the same
CN218975451U (en) Optical sensing module
KR102199101B1 (en) Image sensor package for finger-print and electronic device capable of detecting finger-print
US10263128B2 (en) Photodetector converting ultraviolet light into visible light
US8729581B2 (en) Light guide for LED source
JP7414776B2 (en) Photodetectors, photodetection systems, lidar devices, and mobile objects
TWM637704U (en) Optical sensing module
JP6941403B1 (en) Semiconductor light receiving element
US11336851B2 (en) Image sensing device
CN213182775U (en) Fingerprint discernment sensing mechanism and electronic equipment under screen
RU15941U1 (en) OPTICAL ATTACHMENT FOR SEMICONDUCTOR SOURCE / RECEIVER OF LIGHT OF WIRELESS COMMUNICATION SYSTEMS
KR101762430B1 (en) Backside illumination-typed silicon photomultiplier and method of fabricating the same
JP2023135258A (en) Light detector, light detection system, lidar device, and mobile body
JP2022107240A (en) Photodetector, photodetection system, lidar device, mobile body, and vehicle
CN116256724A (en) Detection unit, detection array motherboard, detector and laser radar
KR20190005984A (en) Collimating on-die optical system

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200880123526.1

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08846163

Country of ref document: EP

Kind code of ref document: A2

DPE1 Request for preliminary examination filed after expiration of 19th month from priority date (pct application filed from 20040101)
WWE Wipo information: entry into national phase

Ref document number: 2010531626

Country of ref document: JP

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 2008846163

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 12740597

Country of ref document: US