WO2009044644A1 - Magnetoresistive effect element, and magnetic random access memory, and its initialization method - Google Patents

Magnetoresistive effect element, and magnetic random access memory, and its initialization method Download PDF

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Publication number
WO2009044644A1
WO2009044644A1 PCT/JP2008/067091 JP2008067091W WO2009044644A1 WO 2009044644 A1 WO2009044644 A1 WO 2009044644A1 JP 2008067091 W JP2008067091 W JP 2008067091W WO 2009044644 A1 WO2009044644 A1 WO 2009044644A1
Authority
WO
WIPO (PCT)
Prior art keywords
random access
access memory
ferromagnetic layer
effect element
magnetoresistive effect
Prior art date
Application number
PCT/JP2008/067091
Other languages
French (fr)
Japanese (ja)
Inventor
Shunsuke Fukami
Original Assignee
Nec Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corporation filed Critical Nec Corporation
Priority to JP2009536017A priority Critical patent/JP5397224B2/en
Publication of WO2009044644A1 publication Critical patent/WO2009044644A1/en

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)

Abstract

A magnetoresistive effect element and a magnetic random access memory comprise a first ferromagnetic layer, an insulating layer provided contiguously thereto, a second ferromagnetic layer provided on the side opposite to the first ferromagnetic layer contiguously to the insulating layer, and at least two third ferromagnetic layers provided near the both ends of the first ferromagnetic layer in the longitudinal direction in contact therewith magnetically. The first through third ferromagnetic layers have magnetic anisotropy in the direction substantially perpendicular to the film surface. The magnetoresistive effect element and the magnetic random access memory are initialized by making the external magnetic field fall down after applying a sufficiently large external magnetic field in the film surface direction thereby introducing a magnetic domain wall in the first ferromagnetic layer. A magnetic random access memory in which the current value required for writing is reduced significantly as compared with 1 mA while maintaining sufficient thermal stability and resistance against disturbance magnetic field, and the memory state can be initialized by an easy process can thereby be provided.
PCT/JP2008/067091 2007-10-04 2008-09-22 Magnetoresistive effect element, and magnetic random access memory, and its initialization method WO2009044644A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009536017A JP5397224B2 (en) 2007-10-04 2008-09-22 Magnetoresistive element, magnetic random access memory, and initialization method thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007260590 2007-10-04
JP2007-260590 2007-10-04

Publications (1)

Publication Number Publication Date
WO2009044644A1 true WO2009044644A1 (en) 2009-04-09

Family

ID=40526072

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/067091 WO2009044644A1 (en) 2007-10-04 2008-09-22 Magnetoresistive effect element, and magnetic random access memory, and its initialization method

Country Status (2)

Country Link
JP (1) JP5397224B2 (en)
WO (1) WO2009044644A1 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011044693A (en) * 2009-08-19 2011-03-03 Samsung Electronics Co Ltd Track provided with magnetic layer and magnetic element provided with the track
JP2011119537A (en) * 2009-12-04 2011-06-16 Nec Corp Memory cell, and magnetic random access memory
JP2013069906A (en) * 2011-09-22 2013-04-18 Renesas Electronics Corp Magnetic memory
CN109643690A (en) * 2017-04-14 2019-04-16 Tdk株式会社 Magnetic wall intends memory element using pattern, magnetic wall utilizes type analog memory, non-volatile logic circuit and magnetic neural component
CN109786544A (en) * 2017-11-14 2019-05-21 Tdk株式会社 Spin(-)orbit torque type magnetizes rotating element, spin(-)orbit torque type magneto-resistance effect element and magnetic memory
CN110268515A (en) * 2018-01-12 2019-09-20 Tdk株式会社 Magnetic wall movement type magnetic recording element and magnetic recording array

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7419729B2 (en) * 2019-10-01 2024-01-23 Tdk株式会社 Domain wall displacement element and magnetic recording array

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005191032A (en) * 2003-12-24 2005-07-14 Toshiba Corp Magnetic storage device and method of writing magnetic information
JP2006073930A (en) * 2004-09-06 2006-03-16 Canon Inc Varying method of magnetizing state of magnetoresistance effect element using magnetic wall movement, magnetic memory device using the method, and solid magnetic memory
JP2007103663A (en) * 2005-10-04 2007-04-19 Toshiba Corp Magnetic element, recording regenerating element, logical operation element and logical computer

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2005069368A1 (en) * 2004-01-15 2007-12-27 独立行政法人科学技術振興機構 Current injection domain wall motion element
WO2007020823A1 (en) * 2005-08-15 2007-02-22 Nec Corporation Magnetic memory cell, magnetic random access memory and method for reading/writing data in magnetic random access memory

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005191032A (en) * 2003-12-24 2005-07-14 Toshiba Corp Magnetic storage device and method of writing magnetic information
JP2006073930A (en) * 2004-09-06 2006-03-16 Canon Inc Varying method of magnetizing state of magnetoresistance effect element using magnetic wall movement, magnetic memory device using the method, and solid magnetic memory
JP2007103663A (en) * 2005-10-04 2007-04-19 Toshiba Corp Magnetic element, recording regenerating element, logical operation element and logical computer

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011044693A (en) * 2009-08-19 2011-03-03 Samsung Electronics Co Ltd Track provided with magnetic layer and magnetic element provided with the track
JP2011119537A (en) * 2009-12-04 2011-06-16 Nec Corp Memory cell, and magnetic random access memory
JP2013069906A (en) * 2011-09-22 2013-04-18 Renesas Electronics Corp Magnetic memory
CN109643690A (en) * 2017-04-14 2019-04-16 Tdk株式会社 Magnetic wall intends memory element using pattern, magnetic wall utilizes type analog memory, non-volatile logic circuit and magnetic neural component
CN109643690B (en) * 2017-04-14 2023-08-29 Tdk株式会社 Magnetic wall-using analog memory element, magnetic wall-using analog memory, nonvolatile logic circuit, and magnetic neural element
CN109786544A (en) * 2017-11-14 2019-05-21 Tdk株式会社 Spin(-)orbit torque type magnetizes rotating element, spin(-)orbit torque type magneto-resistance effect element and magnetic memory
CN109786544B (en) * 2017-11-14 2024-04-30 Tdk株式会社 Spin-orbit torque type magnetization rotating element, magnetoresistance effect element, and magnetic memory
CN110268515A (en) * 2018-01-12 2019-09-20 Tdk株式会社 Magnetic wall movement type magnetic recording element and magnetic recording array
CN110268515B (en) * 2018-01-12 2023-10-17 Tdk株式会社 Magnetic wall moving type magnetic recording element and magnetic recording array

Also Published As

Publication number Publication date
JPWO2009044644A1 (en) 2011-02-03
JP5397224B2 (en) 2014-01-22

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