WO2009041076A1 - 電気二重層キャパシタ用電極及びその製造方法 - Google Patents

電気二重層キャパシタ用電極及びその製造方法 Download PDF

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Publication number
WO2009041076A1
WO2009041076A1 PCT/JP2008/002721 JP2008002721W WO2009041076A1 WO 2009041076 A1 WO2009041076 A1 WO 2009041076A1 JP 2008002721 W JP2008002721 W JP 2008002721W WO 2009041076 A1 WO2009041076 A1 WO 2009041076A1
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WO
WIPO (PCT)
Prior art keywords
electrode
double layer
electric double
etched foil
carbon nanotube
Prior art date
Application number
PCT/JP2008/002721
Other languages
English (en)
French (fr)
Inventor
Kenji Machida
Shunzo Suematsu
Kenji Tamamitsu
Original Assignee
Nippon Chemi-Con Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2008086002A external-priority patent/JP5458505B2/ja
Application filed by Nippon Chemi-Con Corporation filed Critical Nippon Chemi-Con Corporation
Priority to EP08834321.5A priority Critical patent/EP2207189B1/en
Priority to US12/679,470 priority patent/US8427811B2/en
Publication of WO2009041076A1 publication Critical patent/WO2009041076A1/ja
Priority to US13/692,788 priority patent/US8824120B2/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/22—Electrodes
    • H01G11/26—Electrodes characterised by their structure, e.g. multi-layered, porosity or surface features
    • H01G11/28—Electrodes characterised by their structure, e.g. multi-layered, porosity or surface features arranged or disposed on a current collector; Layers or phases between electrodes and current collectors, e.g. adhesives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/22—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/22—Electrodes
    • H01G11/30—Electrodes characterised by their material
    • H01G11/32—Carbon-based
    • H01G11/36—Nanostructures, e.g. nanofibres, nanotubes or fullerenes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/66—Current collectors
    • H01G11/70—Current collectors characterised by their structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/74—Terminals, e.g. extensions of current collectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/84—Processes for the manufacture of hybrid or EDL capacitors, or components thereof
    • H01G11/86—Processes for the manufacture of hybrid or EDL capacitors, or components thereof specially adapted for electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/13—Energy storage using capacitors

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electric Double-Layer Capacitors Or The Like (AREA)

Abstract

容量特性に優れた電気二重層キャパシタ用電極及びその製造方法を得る。 カーボンナノチューブを抄紙成型したシート２を、集電体を構成するエッチング箔１の表面に形成された凹凸部１ａを介してエッチング箔１と一体化して、電気二重層キャパシタ用電極を作成する。あるいは、基板３上の触媒粒子を核として成長させたカーボンナノチューブ４を、エッチング箔１の表面に形成された凹凸部１ａを介してエッチング箔１と一体化して、電気二重層キャパシタ用電極を作成する。これらの電極を製造するには、前記カーボンナノチューブのシート２あるいはカーボンナノチューブを成長させた基板３を、エッチング箔１表面の凹凸部１ａに重ね合わせ、これらを０．０１～１００ｔ／ｃｍ2の圧力で加圧してカーボンナノチューブとエッチング箔とを一体化する。
PCT/JP2008/002721 2007-09-28 2008-09-29 電気二重層キャパシタ用電極及びその製造方法 WO2009041076A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP08834321.5A EP2207189B1 (en) 2007-09-28 2008-09-29 Electrode for electric double layer capacitor and method for producing the same
US12/679,470 US8427811B2 (en) 2007-09-28 2008-09-29 Electrode for electric double layer capacitor and method for producing the same
US13/692,788 US8824120B2 (en) 2007-09-28 2012-12-03 Electrode for electric double layer capacitor and method for producing the same

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007256173 2007-09-28
JP2007-256173 2007-09-28
JP2008-086002 2008-03-28
JP2008086002A JP5458505B2 (ja) 2007-03-30 2008-03-28 電気二重層キャパシタ用電極及びその製造方法

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US12/679,470 A-371-Of-International US8427811B2 (en) 2007-09-28 2008-09-29 Electrode for electric double layer capacitor and method for producing the same
US13/692,788 Division US8824120B2 (en) 2007-09-28 2012-12-03 Electrode for electric double layer capacitor and method for producing the same

Publications (1)

Publication Number Publication Date
WO2009041076A1 true WO2009041076A1 (ja) 2009-04-02

Family

ID=42238557

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/002721 WO2009041076A1 (ja) 2007-09-28 2008-09-29 電気二重層キャパシタ用電極及びその製造方法

Country Status (3)

Country Link
US (2) US8427811B2 (ja)
EP (1) EP2207189B1 (ja)
WO (1) WO2009041076A1 (ja)

Cited By (3)

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WO2012061534A2 (en) * 2010-11-02 2012-05-10 The Regents Of The University Of California Energy storage method and system using defect-engineered nanostructures
US8198623B2 (en) 2009-11-04 2012-06-12 Sumitomo Electric Industries, Ltd. Photodiode array, method for manufacturing photodiode array, epitaxial wafer, and method for manufacturing epitaxial wafer
KR20170133409A (ko) * 2015-03-31 2017-12-05 린텍 가부시키가이샤 적층체

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CN102171870A (zh) * 2008-08-15 2011-08-31 麻省理工学院 碳基纳米结构的层-层组装及其在储能和产能装置中的应用
US8350360B1 (en) 2009-08-28 2013-01-08 Lockheed Martin Corporation Four-terminal carbon nanotube capacitors
US8405189B1 (en) * 2010-02-08 2013-03-26 Lockheed Martin Corporation Carbon nanotube (CNT) capacitors and devices integrated with CNT capacitors
CN102796991B (zh) * 2011-05-27 2014-08-20 清华大学 石墨烯碳纳米管复合膜结构的制备方法
KR20130026789A (ko) * 2011-09-06 2013-03-14 삼성전기주식회사 금속 집전체, 이의 제조방법, 및 이를 구비한 전기 화학 커패시터
CN103988270B (zh) 2011-12-14 2018-01-02 英特尔公司 克服叠层电容器中的偏差
CN103178027B (zh) * 2011-12-21 2016-03-09 清华大学 散热结构及应用该散热结构的电子设备
DE102013213273A1 (de) * 2013-02-22 2014-08-28 Bayer Materialscience Aktiengesellschaft Kohlenstoffnanoröhren-haltige Dispersion und ihre Verwendung in der Herstellung von Elektroden
DE102013007204A1 (de) * 2013-04-25 2014-06-12 Daimler Ag Verfahren zur Herstellung einer Membranelektrodenanordnung
US9618403B2 (en) * 2013-10-02 2017-04-11 Florida State University Research Foundation, Inc. Strain sensors and methods of manufacture and use
IL230509A (en) * 2014-01-16 2016-02-29 Elbit Systems Land & C4I Ltd Super-capacitor configuration with peptide-coated graphene electrodes
RU2572840C2 (ru) * 2014-05-22 2016-01-20 Мсд Текнолоджис Частная Компания С Ограниченной Ответственностью Металлическая фольга с проводящим слоем и способ ее изготовления
WO2015183762A1 (en) 2014-05-24 2015-12-03 Georgia Tech Research Corporation Chip-scale embedded carbon nanotube electrochemical double layer supercapacitor
WO2016019143A1 (en) 2014-07-30 2016-02-04 General Nano Llc Carbon nanotube sheet structure and method for its making
US11021369B2 (en) 2016-02-04 2021-06-01 General Nano Llc Carbon nanotube sheet structure and method for its making
US11639051B2 (en) * 2016-12-08 2023-05-02 Goodrich Corporation Pressurized reduction of CNT resistivity
RU190386U1 (ru) * 2019-02-21 2019-07-01 Общество с ограниченной ответственностью «Углерод ЧГ» Активный электрод для суперконденсатора
JPWO2021006327A1 (ja) * 2019-07-10 2021-01-14
NO20221045A1 (en) * 2022-09-30 2024-04-01 Nanocaps As Fabricating an electrode for a lithium-ion capacitor

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8198623B2 (en) 2009-11-04 2012-06-12 Sumitomo Electric Industries, Ltd. Photodiode array, method for manufacturing photodiode array, epitaxial wafer, and method for manufacturing epitaxial wafer
US8309380B2 (en) 2009-11-04 2012-11-13 Sumitomo Electric Industries, Ltd. Photodiode array, method for manufacturing photodiode array, epitaxial wafer, and method for manufacturing epitaxial wafer
WO2012061534A2 (en) * 2010-11-02 2012-05-10 The Regents Of The University Of California Energy storage method and system using defect-engineered nanostructures
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KR20170133409A (ko) * 2015-03-31 2017-12-05 린텍 가부시키가이샤 적층체
KR102467106B1 (ko) * 2015-03-31 2022-11-14 린텍 가부시키가이샤 적층체

Also Published As

Publication number Publication date
US8427811B2 (en) 2013-04-23
US8824120B2 (en) 2014-09-02
US20130180091A1 (en) 2013-07-18
EP2207189B1 (en) 2015-06-17
US20100259867A1 (en) 2010-10-14
EP2207189A1 (en) 2010-07-14
EP2207189A4 (en) 2012-07-11

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