WO2009035411A1 - Support d'enregistrement magnétique avec couche de nucléation synthétique et procédé de fabrication - Google Patents
Support d'enregistrement magnétique avec couche de nucléation synthétique et procédé de fabrication Download PDFInfo
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- WO2009035411A1 WO2009035411A1 PCT/SG2007/000309 SG2007000309W WO2009035411A1 WO 2009035411 A1 WO2009035411 A1 WO 2009035411A1 SG 2007000309 W SG2007000309 W SG 2007000309W WO 2009035411 A1 WO2009035411 A1 WO 2009035411A1
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- 230000005291 magnetic effect Effects 0.000 title claims abstract description 156
- 230000006911 nucleation Effects 0.000 title claims abstract description 131
- 238000010899 nucleation Methods 0.000 title claims abstract description 131
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 5
- 238000000034 method Methods 0.000 title claims description 21
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 23
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000010410 layer Substances 0.000 claims description 258
- 238000009826 distribution Methods 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 20
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 238000000151 deposition Methods 0.000 claims description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 10
- 229910052804 chromium Inorganic materials 0.000 claims description 10
- 239000001301 oxygen Substances 0.000 claims description 10
- 229910052760 oxygen Inorganic materials 0.000 claims description 10
- 150000001721 carbon Chemical class 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 9
- 229910052697 platinum Inorganic materials 0.000 claims description 9
- 239000000956 alloy Substances 0.000 claims description 8
- 229910045601 alloy Inorganic materials 0.000 claims description 8
- 229910052707 ruthenium Inorganic materials 0.000 claims description 8
- 229910052715 tantalum Inorganic materials 0.000 claims description 8
- 229910052719 titanium Inorganic materials 0.000 claims description 8
- 239000007789 gas Substances 0.000 claims description 7
- 229910052702 rhenium Inorganic materials 0.000 claims description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- 229910052763 palladium Inorganic materials 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 230000001939 inductive effect Effects 0.000 claims description 5
- 229910052742 iron Inorganic materials 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 229910052758 niobium Inorganic materials 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 239000011241 protective layer Substances 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 229910052726 zirconium Inorganic materials 0.000 claims description 5
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical group [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- 229910052741 iridium Inorganic materials 0.000 claims description 4
- 229910052762 osmium Inorganic materials 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 229910052748 manganese Inorganic materials 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 229910015136 FeMn Inorganic materials 0.000 claims description 2
- 229910019041 PtMn Inorganic materials 0.000 claims description 2
- 229910052772 Samarium Inorganic materials 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- 239000002885 antiferromagnetic material Substances 0.000 claims description 2
- 230000007797 corrosion Effects 0.000 claims description 2
- 238000005260 corrosion Methods 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 6
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims 2
- 229910001873 dinitrogen Inorganic materials 0.000 claims 2
- 229910001882 dioxygen Inorganic materials 0.000 claims 2
- 229910052725 zinc Inorganic materials 0.000 claims 2
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 229910017052 cobalt Inorganic materials 0.000 claims 1
- 239000010941 cobalt Substances 0.000 claims 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 description 10
- 230000008021 deposition Effects 0.000 description 9
- 238000013459 approach Methods 0.000 description 5
- 229910019222 CoCrPt Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000003917 TEM image Methods 0.000 description 4
- -1 SiO2 Chemical class 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 229910021296 Co3Pt Inorganic materials 0.000 description 2
- 229910018979 CoPt Inorganic materials 0.000 description 2
- 229910005335 FePt Inorganic materials 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/74—Record carriers characterised by the form, e.g. sheet shaped to wrap around a drum
- G11B5/82—Disk carriers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
- G11B5/66—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers
- G11B5/674—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers having differing macroscopic or microscopic structures, e.g. differing crystalline lattices, varying atomic structures or differing roughnesses
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
- G11B5/66—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers
- G11B5/676—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers having magnetic layers separated by a nonmagnetic layer, e.g. antiferromagnetic layer, Cu layer or coupling layer
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/72—Protective coatings, e.g. anti-static or antifriction
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
- G11B5/736—Non-magnetic layer under a soft magnetic layer, e.g. between a substrate and a soft magnetic underlayer [SUL] or a keeper layer
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
- G11B5/7368—Non-polymeric layer under the lowermost magnetic recording layer
- G11B5/7369—Two or more non-magnetic underlayers, e.g. seed layers or barrier layers
- G11B5/737—Physical structure of underlayer, e.g. texture
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
- G11B5/7368—Non-polymeric layer under the lowermost magnetic recording layer
- G11B5/7373—Non-magnetic single underlayer comprising chromium
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
- G11B5/7368—Non-polymeric layer under the lowermost magnetic recording layer
- G11B5/7377—Physical structure of underlayer, e.g. texture
Definitions
- This invention relates generally to magnetic recording media, and more particularly to a magnetic recording medium with a synthetic nucleation layer and a magnetic recording layer.
- Perpendicular magnetic recording media have been developed to provide higher recording density in data storage devices such as disk drives.
- a typical perpendicular magnetic recording medium includes a substrate and a magnetic recording layer formed over the substrate.
- a factor that determines the recording density of the perpendicular magnetic recording media is the size of the magnetic grains in the magnetic recording layer. Reduction of grain size can pack more grains in a bit, which may increase the storage density and the signal-noise ratio at a given density. Therefore, a key objective in the design of perpendicular magnetic recording media is to tailor the grain size.
- the intermediate layer which consists of two or more elements, is sputtered in the presence of oxygen, for example, with a RuCr alloy target.
- oxygen for example
- oxide regions for example Cr oxide
- the magnetic recording layer grows on these intermediate layers with smaller grain sizes, it also develops a smaller grain size.
- a magnetic recording medium comprises a base structure, a nucleation layer over the base structure, wherein the nucleation layer is primarily carbon by atomic weight, and a magnetic recording layer over the nucleation layer, wherein the nucleation layer provides nucleation sites that determine a grain size and a grain size distribution of magnetic grains in the magnetic recording layer.
- the nucleation layer is carbon based and provides nucleation sites that determine a grain size and a grain size distribution of magnetic grains in the magnetic recording layer.
- the nucleation layer can contact the magnetic recording layer, or alternatively, the nucleation layer can be spaced from the magnetic recording layer and an intermediate layer such as ruthenium can contact and be sandwiched between the nucleation layer and the magnetic recording layer.
- the nucleation layer may be hydrogenated carbon or nitrogenated carbon.
- the grain size may have a mean of less than 6 nm, and the grain size distribution has a standard deviation of less than 15%.
- the magnetic recording media may be a disk that provides perpendicular magnetic recording for a disk drive.
- a method of making a magnetic recording medium comprises providing a base structure, depositing a nucleation layer that is primarily carbon by atomic weight formed over the base structure, and sputtering a magnetic recording layer over the nucleation layer, wherein the nucleation layer provides nucleation sites that determine a grain size and a grain size distribution of magnetic grains in the magnetic recording layer.
- a magnetic recording medium comprises a substrate, a soft magnetic underlayer over the substrate, a seedlayer, a first or lower intermediate layer over the soft magnetic underlayer and a nucleation layer over the first intermediate layer
- the nucleation layer may consist essentially of hydrogenated carbon or nitrogenated carbon and is primarily carbon by atomic weight
- a second or upper intermediate layer over the nucleation layer and a magnetic recording layer over the second intermediate layer
- the nucleation layer provides nucleation sites that determine a grain size and a grain size distribution of the second intermediate layer which determines the size and distribution of magnetic grains in the magnetic recording layer
- the magnetic recording layer provides perpendicular magnetic recording for a disk drive.
- FIG. 1 illustrates the structure of a magnetic recording medium in accordance with an embodiment of the invention
- FIG. 2 illustrates the structure of a magnetic recording medium in accordance with an embodiment of the invention
- FIGS. 3A-3D illustrates the case of random nucleation sites and the formation of grains in FIGS. 3A-3B, and the case of uniformly spaced nucleation sites and the formation of grains in FIGS. 3C-3D in accordance with an embodiment of the invention
- FIGS. 4A-4C illustrates the formation of a nucleation layer and the formation of clusters in accordance with an embodiment of the invention
- FIGS. 5A-5C are TEM images showing grain structure formed in an upper intermediate layer in accordance an embodiment of the invention.
- FIG. 6 is a graph showing grain size and grain size distribution curves of a second intermediate layer according to embodiments of the invention, compared to those of a conventional magnetic recording medium.
- FIGS. 7A-7B are graphs showing the change of C-axis orientation ( ⁇ 50 ), coercivity (H 0 ) and nucleation field(-H ⁇ ) upon insertion of a carbon-based nucleation layer in accordance with an embodiment of the invention.
- Grain size and grain size distribution in polycrystalline thin films are determined by the number and the arrangement of nucleation sites.
- the number of nucleation sites is increased to decrease the resulting grain size, and the nucleation sites are arranged uniformly to ensure that the grain size distribution is narrower. This also is to prevent varying distribution of the size of grains that is observed in the conventional methods of deposition where nucleation and film growth take place simultaneously which has the implication that leads to an increased mean grain size.
- the number of nucleation sites and the arrangement of the nucleation sites are controlled in the formation of the nucleation layer. In this manner, the grain size can be tailored for the specific application.
- the dedicated synthetic nucleation layer is formed. When suitable materials are used as synthetic nucleation layer, the nucleation sites could be uniformly and densely distributed. This will lead to a reduction in the grain size and grain size distribution.
- a perpendicular magnetic recording medium 10 includes a base structure 12, lower intermediate layer 14 disposed on the base structure 12, a synthetic nucleation layer 20 disposed between the lower intermediate layer 14, and an upper intermediate layer 16, and a magnetic recording layer 22 disposed on the upper intermediate layer 16.
- Base structure 12 includes a substrate 32, and an adhesion layer 34, a soft magnetic layer 36 and a seed layer or a growth inducing layer 38 sequentially formed on a substrate 32.
- the lower intermediate layer 14 is deposited at a pressure of about 0.1-1 Pa. By depositing at such a pressure, lower intermediate layer 14 possesses a relatively narrow dispersion of crystallographic orientation of the grains.
- a synthetic nucleation layer 20 is deposited on the lower intermediate layer 14.
- an upper intermediate layer 16 is formed on the synthetic nucleation layer 20, at a pressure higher than the pressure used to deposit lower intermediate layer 14.
- the lower intermediate layer 14 helps to improve the crystallographic texture, and the upper intermediate layer 16, acting as a template for separating the densely packed grains, helps to obtain segregated grain structure in the recording layer to improve signal to noise ratio from the magnetic recording layer 22.
- the synthetic nucleation layer 20 is responsible for producing fine grains in upper intermediate layer 16, which controls the grain size in the recording layer 22.
- the synthetic nucleation layer is deposited for a nominal thickness ranging from a quarter to two monolayers of material.
- Several materials or elements may be candidates for the nucleation layer, such as for example any one or combinations of C, Ta, W, Ru, Pt, Pd, Nb, Mo, Re, Os, Ir and the like.
- Additional element and/or elements may be included in the nucleation layer.
- additional elements may be gasses such as hydrogen, nitrogen, oxygen, and the like, or metals such as Cr, Ti, Zr, Ag, Au, In, Cu, Al, Mn, Mg and the like.
- the nucleation layer may be a hydrogenated carbon based layer.
- the nucleation layer may be a nitrogenated carbon based layer.
- magnetic grains in layer 22 grow following the structure of grains in layer 16. From this process, magnetic recording layer having reduced grain size is successfully obtained. It should be appreciated, that since excessive oxygen, or other gases are not added during the formation of the magnetic layer, the magnetic recording layer is formed with less presence of these substances. As such, generation of superparamagnetic grains in the magnetic recording layer is successfully avoided by the solutions provided according to embodiments of the present invention.
- a perpendicular magnetic recording medium 30 includes a base structure 12, lower intermediate layer 14 disposed on the base structure 12, a synthetic nucleation layer 20 disposed between the lower intermediate layer 14, and a magnetic recording layer 22.
- Base structure 12 includes a substrate 32, and an adhesion layer 34, a soft magnetic layer 36 and a seed layer 38 sequentially formed on a substrate 32.
- the synthetic nucleation layer 20 is directly responsible for producing fine grains in the recording layer 22.
- the perpendicular magnetic recording medium 10 includes a base structure 12, which may consist of amorphous or crystalline or a combination of soft magnetic underlayers 36.
- the layer 14 disposed on the base structure 12 could be magnetic or non-magnetic layer with an hcp(00.2) or fcc(111 ) texture or a derivative of these.
- a synthetic nucleation layer 20 is disposed on the lower intermediate layer 14, and a magnetic recording layer 22 could be disposed directly on synthetic nucleation layer 20 or on another intermediate layer 16 which is disposed on nucleation layer 20.
- Base structure 12 includes a substrate 32, and an adhesion layer 34, a soft magnetic layer 36 and a seed layer 38 sequentially formed on a substrate 32.
- the lower intermediate layer 14 helps to improve the crystallographic texture
- upper intermediate layer 16 acting as a template for separating the densely packed grains, helps to obtain segregated grain structure in the recording layer to improve signal to noise ratio from the magnetic recording layer 22. If the lower intermediate layer 14 is made of a magnetic or metamagnetic layer, it also helps to direct the flux from the writing head, which helps in improving the writability.
- the soft magnetic layer 36 i.e. soft underlayers
- the soft underlayers may be a combination of one or several layers which may or may not necessarily be crystalline.
- the soft underlayers may be made of a material from one or more elements such as for example Fe, Co, Ni, B, Ta, Zr, Nb, Si, Ti, Ru 1 Cu, Pt, Pd, Cr, and the like.
- the soft underlayers may also be a combination of one or several layers which may or may not necessarily be antiferromagnetically coupled synthetically.
- the soft underlayers may be pinned by antiferromagnetic material such as for example IrMn, FeMn, NiO, IrMnCr, PtMn, and the like.
- the growth inducing layer may consist of one or a mixture of for example Ta, Cu, CrTi, Ag, Au, and the like.
- the lower intermediate layer may be formed from one or a mixture of elements such as for example Cr, Co, Fe, Ni, Cu, Ru, Pd, Pt, and the like.
- the upper intermediate layer may be of a material such as for example Ru, Cr, Co, Cu, Re, Os, alloys thereof, and the like.
- the upper intermediate layer may be sputtered in the presence of a reactive gas such as oxygen, nitrogen, hydrogen and the like.
- the lower intermediate layer may be formed under lower pressure parameters to obtain more narrowly-dispersed grains than in forming the upper intermediate layer to obtain smaller-sized grains.
- the recording layer 22 is an alloy of two or more elements such as for example Co, Cr, Pt, B, Ta, Pd, Sm, Fe, Ni and the like.
- the recording layer may have an oxide based grain boundary to separate the grains from each other.
- the oxide based grain boundary may be obtained from one or more elements such as for example Si, Cr, Ta, Ti, Al, Mg and the like.
- the recording layer may be coated with a protective layer or a cover layer 42 such as for example carbon, nitrogenated carbon, hydrogenated carbon, silicon nitride and the like to improve resistance to corrosion.
- the recording layer 22 and the protective layer 42 may be coated with a lubricant material 44 such as PFPE to improve wear resistance.
- the magnetic recording media may be buffed or undergo other post-sputter treatments in order to achieve a smooth surface.
- base structure 12 shown in FIG. 1-2 may comprise of different configurations.
- base structure may comprise a substrate 32.
- the base structure or may not include an adhesion layer 34 and/or growth inducing layer 38.
- FIGS. 3A-3D shows two cases of nucleation and growth mechanisms in thin film deposition processes.
- nucleation sites 52 are formed randomly on the substrate 56.
- FIG. 3B when further deposition occurs, the grains 54 formed on nucleation sites 52 are of random sizes.
- FIG. 3C illustrates the case of more uniformly and densely arranged 82 nucleation sites 52 according to an embodiment of this invention.
- the grains 54 formed on nucleation sites 52 are of uniform and smaller sizes 84 than in FIG. 3B.
- FIGS. 4A-4C shows a schematic illustration of the predicted mechanism of nucleation site formation.
- the layer shown in FIGS. 4A-4C is of the lower intermediate layer 14 shown in FIG. 1-2.
- the material that would form the synthetic nucleation layer 20 is deposited. If there is no movement of atoms from the material of the nucleation layer 20, the material of the nucleation layer 20 would be scattered around lower intermediate layer 14, as shown in FIG. 4A showing the lower intermediate layer immediately after deposition 60.
- the material of the nucleation layer 20 moves around and forms clusters 58 within a short time after deposition 62.
- the clusters 58 of atoms from the material of the nucleation layer 20 act as the synthetic nucleation sites 52, as shown in FIG. 3C.
- intermediate layer grains 54 in the range of 5-6 nm with a grain boundary 54 are formed as shown 64 in FIG. 4C.
- a comparison is shown in FIGS.
- TEM images 68,69 (FIG. 5B and 5C) of upper intermediate layers of magnetic recording medium residing on a nucleation layer 20 as discussed and shown in FIG. 1-3 in accordance with an embodiment of the invention, with a TEM image 66 (FIG. 5A) of an upper intermediate layer of a magnetic recording medium where the a nucleation layer is absent from the magnetic recording medium.
- the magnetic recording medium from which the TEM image 66 of intermediate layer is shown in FIG. 5A is not in accordance with an embodiment of the invention, and is provided only for illustrating the significance of the nucleation layer 20.
- FIG. 5B and 5C are of two different types -I and II.
- type I and type Il is in the reactive gas used in the sputter deposition of the carbon layer, being for example hydrogen and nitrogen, respectively. It can be noticed that the insertion of nucleation layer of both types I and Il helps to achieve segregation of grains in the intermediate layer.
- FIG. 6 is a graph 70 showing grain size and grain size distribution curves 74, 76, 78 of the upper intermediate layer 16 according to embodiments of the present invention, compared to one curve 72 of the upper intermediate layer 16 of a conventional magnetic recording medium without nucleation layer.
- the magnetic recording media from which the grain size curves of intermediate layer of curve 72 as shown in FIG. 6 is not in accordance with an embodiment of the invention, and is provided only for illustrating the significance of the nucleation layer 20.
- Curve 74 is for 0.24nm nucleation layer
- curve 76 is for 0.18nm nucleation layer
- curve 78 is for O.O ⁇ nm nucleation layer in accordance with embodiments of the invention. It can be noticed that, with the introduction of nucleation layer, the mean grain size is reduced by about 1 nm to below 6 nm and the grain size distribution also narrows. The distribution is also reduced to about 13 % in the case of upper intermediate layer 16 deposited on nucleation layer 20, as compared to about 15% for upper intermediate layer 16 deposited without nucleation layer. These results clearly indicate the effectiveness of inserting a nucleation layer to reduce the grain size and distribution required for high-density recording media. It will be appreciated that this technique can be used in several applications that require small and uniform grains.
- FIGS. 7A-7B are graphs showing the change of C-axis orientation ( ⁇ 50 ), coercivity (Hc) and nucleation field (-Hn) upon insertion of a synthetic nucleation layer in accordance with an embodiment of the invention.
- ⁇ 50 C-axis orientation
- Hc coercivity
- -Hn nucleation field
- FIG. 7 A shows the dispersion in the perpendicular orientation of the Co-grains as measured from the full width at half maximum ( ⁇ 50 ) of rocking curves using X-Ray Diffraction (XRD).
- ⁇ 50 increases by about 0.6°, which indicates a slight deterioration in the texture.
- type I nucleation layer the increase, is about 0.4°.
- this increase is not significant in affecting the performance of the media and may be overcome by using other methods that help improve the orientation. Indeed, measurements recorded indicated that the media with nucleation layer possess a signal to noise ratio significantly larger by about 1.5 dB than the media without the nucleation layers, which points towards the potential effectiveness of the proposed technique.
- FIG. 7B shows the change in the coercivity (H c ) and nucleation field (-H n ) upon inserting the type Il nucleation layer.
- Empirical data obtained with the embodiments of the invention have shown that grain sizes below 5.5 nm with a standard deviation of 13% were obtained and signal to noise ratio improvement of about 1.5 dB has been observed.
- the embodiments of the invention can help to solve a major problem for high-density recording media and can also be applicable in several other fields requiring stringent grain size control.
- embodiments of the invention may be applied to different magnetic recording media.
- the invention may be embodied in magnetic recording media materials such as CoCrPt, CoPt, FePt, CoPt 3 , Co 3 Pt, SmCo 5 and the like.
- magnetic recording media materials such as CoCrPt, CoPt, FePt, CoPt 3 , Co 3 Pt, SmCo 5 and the like.
- Applied in different magnetic material media it will be appreciated that different grain diameters may be achieved.
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- Crystallography & Structural Chemistry (AREA)
- Magnetic Record Carriers (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
Abstract
L'invention concerne un support d'enregistrement magnétique et un procédé de fabrication d'un support d'enregistrement magnétique. Le support d'enregistrement magnétique comprend une couche de nucléation formée sur une structure de base et une couche d'enregistrement magnétique formée sur la couche de nucléation. La couche de nucléation à base de carbone forme des sites de nucléation pour la couche magnétique pour obtenir des grains cristallins régulièrement distribués et dimensionnés.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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PCT/SG2007/000309 WO2009035411A1 (fr) | 2007-09-12 | 2007-09-12 | Support d'enregistrement magnétique avec couche de nucléation synthétique et procédé de fabrication |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/SG2007/000309 WO2009035411A1 (fr) | 2007-09-12 | 2007-09-12 | Support d'enregistrement magnétique avec couche de nucléation synthétique et procédé de fabrication |
Publications (1)
Publication Number | Publication Date |
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WO2009035411A1 true WO2009035411A1 (fr) | 2009-03-19 |
Family
ID=40452262
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/SG2007/000309 WO2009035411A1 (fr) | 2007-09-12 | 2007-09-12 | Support d'enregistrement magnétique avec couche de nucléation synthétique et procédé de fabrication |
Country Status (1)
Country | Link |
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WO (1) | WO2009035411A1 (fr) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9412404B2 (en) | 2009-12-15 | 2016-08-09 | HGST Netherlands B.V. | Onset layer for perpendicular magnetic recording media |
US9966096B2 (en) | 2014-11-18 | 2018-05-08 | Western Digital Technologies, Inc. | Self-assembled nanoparticles with polymeric and/or oligomeric ligands |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5846648A (en) * | 1994-01-28 | 1998-12-08 | Komag, Inc. | Magnetic alloy having a structured nucleation layer and method for manufacturing same |
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2007
- 2007-09-12 WO PCT/SG2007/000309 patent/WO2009035411A1/fr active Application Filing
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5846648A (en) * | 1994-01-28 | 1998-12-08 | Komag, Inc. | Magnetic alloy having a structured nucleation layer and method for manufacturing same |
Non-Patent Citations (3)
Title |
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ONOUE T. ET AL.: "CoCrPtTa and Co/Pd perpendicular magnetic recording media with amorphous underlayers", IEEE TRANSACTIONS ON MAGNETICS, vol. 37, no. 4, July 2001 (2001-07-01), pages 1594, XP011033686 * |
ONOUE T. ET AL.: "CoCrPtTa single layer perpendicular magnetic recording media with carbon underlayer", JOURNAL OF APPLIED PHYSICS, vol. 88, no. 11, 1 December 2000 (2000-12-01), pages 6645 - 6651, XP012051028, DOI: doi:10.1063/1.1323532 * |
TONEY M.F. ET. AL.: "X-ray diffraction studies of materials for magnetic recording technology", IBM ALMADEN RESEARCH CENTER&IBM STORAGE TECHNOLOGY DIVISION,NSLS ACTIVITY REPORT 2001, pages 2-7 TO 2-9 * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9412404B2 (en) | 2009-12-15 | 2016-08-09 | HGST Netherlands B.V. | Onset layer for perpendicular magnetic recording media |
US9966096B2 (en) | 2014-11-18 | 2018-05-08 | Western Digital Technologies, Inc. | Self-assembled nanoparticles with polymeric and/or oligomeric ligands |
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