WO2009035044A1 - Photosensitive composition and method for pattern formation using the photosensitive composition - Google Patents

Photosensitive composition and method for pattern formation using the photosensitive composition Download PDF

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Publication number
WO2009035044A1
WO2009035044A1 PCT/JP2008/066443 JP2008066443W WO2009035044A1 WO 2009035044 A1 WO2009035044 A1 WO 2009035044A1 JP 2008066443 W JP2008066443 W JP 2008066443W WO 2009035044 A1 WO2009035044 A1 WO 2009035044A1
Authority
WO
WIPO (PCT)
Prior art keywords
photosensitive composition
pattern formation
acid
composition
pattern
Prior art date
Application number
PCT/JP2008/066443
Other languages
French (fr)
Japanese (ja)
Inventor
Sou Kamimura
Shuji Hirano
Original Assignee
Fujifilm Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corporation filed Critical Fujifilm Corporation
Publication of WO2009035044A1 publication Critical patent/WO2009035044A1/en

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
    • C08F212/22—Oxygen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
    • C08F212/22—Oxygen
    • C08F212/24—Phenols or alcohols
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D125/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring; Coating compositions based on derivatives of such polymers
    • C09D125/18—Homopolymers or copolymers of aromatic monomers containing elements other than carbon and hydrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2/00—Processes of polymerisation
    • C08F2/04—Polymerisation in solution
    • C08F2/06—Organic solvent

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Organic Chemistry (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Emergency Medicine (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)

Abstract

This invention provides a photosensitive composition for use in a production process for semiconductors such as ICs, the production of circuit boards, for example, for liquid crystals and thermal heads, and other photofabrication processes, which composition has been improved in four points of sensitivity, resolution, line edge roughness, and falling-down of pattern, and a method for pattern formation using the photosensitive composition. The photosensitive composition is characterized by comprising (A) a polymer which comprises repeating units having two types of specific acetal structures and is decomposed upon the action of an acid to increase the solubility in an alkali developing solution, and (B) a compound which generates an acid upon an actinic radiation or a radiation.
PCT/JP2008/066443 2007-09-14 2008-09-11 Photosensitive composition and method for pattern formation using the photosensitive composition WO2009035044A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-239571 2007-09-14
JP2007239571A JP2009069630A (en) 2007-09-14 2007-09-14 Photosensitive composition and pattern forming method using the same

Publications (1)

Publication Number Publication Date
WO2009035044A1 true WO2009035044A1 (en) 2009-03-19

Family

ID=40452051

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/066443 WO2009035044A1 (en) 2007-09-14 2008-09-11 Photosensitive composition and method for pattern formation using the photosensitive composition

Country Status (2)

Country Link
JP (1) JP2009069630A (en)
WO (1) WO2009035044A1 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2449429A1 (en) * 2009-07-03 2012-05-09 FUJIFILM Corporation Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using the same
WO2013133396A1 (en) * 2012-03-05 2013-09-12 Fujifilm Corporation Actinic ray-sensitive or radiation-sensitive resin composition, and, actinic ray-sensitive or radiation-sensitive film and pattern forming method, each using the composition
TWI465845B (en) * 2011-06-14 2014-12-21 Fujifilm Corp Actinic-ray-or radiation-sensitive resin composition, actinic-ray-or radiation-sensitive film therefrom and method of forming pattern

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200135372A (en) * 2018-03-19 2020-12-02 주식회사 다이셀 Photoresist resin, photoresist resin manufacturing method, photoresist resin composition and pattern formation method

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000194127A (en) * 1998-10-19 2000-07-14 Shin Etsu Chem Co Ltd Resist material and pattern forming method
JP2001337457A (en) * 2000-03-22 2001-12-07 Shin Etsu Chem Co Ltd Chemical amplification type positive resist material and method for forming pattern
JP2005099558A (en) * 2003-09-26 2005-04-14 Fuji Photo Film Co Ltd Positive photoresist composition for electron beam, x-ray or euv ray, and pattern forming method using same
JP2006091663A (en) * 2004-09-27 2006-04-06 Fuji Photo Film Co Ltd Positive resist composition and method for forming pattern by using the same
JP2006251550A (en) * 2005-03-11 2006-09-21 Fuji Photo Film Co Ltd Positive resist composition and pattern forming method using it

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000194127A (en) * 1998-10-19 2000-07-14 Shin Etsu Chem Co Ltd Resist material and pattern forming method
JP2001337457A (en) * 2000-03-22 2001-12-07 Shin Etsu Chem Co Ltd Chemical amplification type positive resist material and method for forming pattern
JP2005099558A (en) * 2003-09-26 2005-04-14 Fuji Photo Film Co Ltd Positive photoresist composition for electron beam, x-ray or euv ray, and pattern forming method using same
JP2006091663A (en) * 2004-09-27 2006-04-06 Fuji Photo Film Co Ltd Positive resist composition and method for forming pattern by using the same
JP2006251550A (en) * 2005-03-11 2006-09-21 Fuji Photo Film Co Ltd Positive resist composition and pattern forming method using it

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2449429A1 (en) * 2009-07-03 2012-05-09 FUJIFILM Corporation Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using the same
EP2449429A4 (en) * 2009-07-03 2012-12-26 Fujifilm Corp Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using the same
US8877423B2 (en) 2009-07-03 2014-11-04 Fujifilm Corporation Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using the same
TWI465845B (en) * 2011-06-14 2014-12-21 Fujifilm Corp Actinic-ray-or radiation-sensitive resin composition, actinic-ray-or radiation-sensitive film therefrom and method of forming pattern
WO2013133396A1 (en) * 2012-03-05 2013-09-12 Fujifilm Corporation Actinic ray-sensitive or radiation-sensitive resin composition, and, actinic ray-sensitive or radiation-sensitive film and pattern forming method, each using the composition

Also Published As

Publication number Publication date
JP2009069630A (en) 2009-04-02

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