WO2009026232A1 - Appareil pour effectuer une endoscopie confocale - Google Patents
Appareil pour effectuer une endoscopie confocale Download PDFInfo
- Publication number
- WO2009026232A1 WO2009026232A1 PCT/US2008/073486 US2008073486W WO2009026232A1 WO 2009026232 A1 WO2009026232 A1 WO 2009026232A1 US 2008073486 W US2008073486 W US 2008073486W WO 2009026232 A1 WO2009026232 A1 WO 2009026232A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- silicon wafer
- microscanner
- soi
- mirror
- micro mirror
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
- G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
- G02B26/0841—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD the reflecting element being moved or deformed by electrostatic means
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00555—Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity
- B81C1/00603—Aligning features and geometries on both sides of a substrate, e.g. when double side etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/03—Microengines and actuators
- B81B2201/033—Comb drives
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/04—Optical MEMS
- B81B2201/047—Optical MEMS not provided for in B81B2201/042 - B81B2201/045
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/01—Suspended structures, i.e. structures allowing a movement
- B81B2203/0136—Comb structures
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
- B81C2201/019—Bonding or gluing multiple substrate layers
Definitions
- the present invention relates to microscanners in general, and, in particular, to a microscanner for performing confocal endoscopy.
- Microscanners are essential components for the miniaturization of optical diagnostic equipments such as endoscopes.
- silicon-based microscanners have been integrated into confocal and other instruments for providing images.
- the reflectivity of silicon mirrors having imaging wavelengths of 600-1550 run is only about 30%. Such low reflectivity places limitations on minimal pinhole size and adversely affects depth resolution of confocal imaging equipments.
- a two-axis self-aligned vertical comb-drive microscanner is fabricated from a bonded silicon- on-insulator (SOI) silicon wafer.
- SOI silicon- on-insulator
- a SOI silicon wafer can provide about 90% reflectivity at 633 nm.
- a 2.5 ⁇ m misalignment tolerance can be achieved for the critical backside alignment step.
- confocal images with 1 ⁇ m resolution can be achieved using a microscanner having SOI silicon wafer mirrors.
- Figure 1 is an isomeric view of a microscanner, in accordance with a preferred embodiment of the present invention.
- Figures 2a-2h graphically illustrates a method for making the microscanner from Figure 1, in accordance with a preferred embodiment of the present invention.
- a microscanner 10 includes a micro mirror 11 controlled by a first bank of comb drive actuators 12a and a second bank of comb drive actuators 12b.
- Comb drive actuators 12a provide rotations of micro mirror 11 about an x-axis
- comb drive actuators 12b provide rotations of micro mirror 11 about a y-axis.
- the decoupled two-axis rotation can be achieved by mounting micro mirror 11 via a set of torsion rods in a frame with gimbals in an orthogonal direction.
- microscanner 10 having a micro mirror, in accordance with a preferred embodiment of the present invention.
- the fabrication of microscanner 10 begins with the protection of the surface of a silicon-on-insulator (SOI) silicon wafer by thermal oxidation.
- SOI silicon-on-insulator
- a silicon dioxide layer 24 can be formed on a 30 ⁇ m SOI silicon wafer 20, which includes a silicon layer 21, an oxide layer 22 and a substrate layer 23, via wet oxidation at 1,100 °C, as shown in Figure 2a.
- alignment marks 25 are dry etched into the backside of SOI silicon wafer 20, as depicted in Figure 2b.
- Silicon dioxide layer 24 is then removed from the frontside of SOI silicon wafer 20 via buffer oxide etch, and coarse features 26 of mirror frame and outer stator combs, which are aligned to alignment marks 25 on the backside of SOI silicon wafer 20, are subsequently etched into silicon layer 21 via a Deep Reactive Ion Etching (DRIE) process.
- DRIE Deep Reactive Ion Etching
- a silicon wafer 30 having a -4800 A thick thermal oxide 31 is then fusion bonded on top of SOI silicon wafer 20, as depicted in Figure 2d.
- the above-mentioned initial protection of SOI silicon wafer 20 by silicon dioxide layer 24 is important for achieving a high yield in the fusion bonding process.
- silicon wafer 30 is ground to a thickness of approximately 20 ⁇ m and polished in order to yield a smooth surface to serve as an optical interface.
- a micro mirror will be fabricated on a layer 32 of silicon wafer 30.
- Low-temperature oxide (LTO) layers 33a, 33b of approximately 1 ⁇ m are deposited on silicon wafer 30 and SOI silicon wafer 20, respectively, via low-pressure chemical vapor deposition, as depicted in Figure 2d.
- LTO Low-temperature oxide
- DRIE is utilized to expose front alignment marks, oxide with bond pads and exact microscanner features, as shown in Figure 2e.
- DRIE is again utilized to etch silicon layer 21. as depicted in Figure 2f.
- the exact features of the stator and rotor combs of the microscanner are then defined by etching through oxide layer 22, as shown in Figure 2g.
- the device wafer is bonded to a handle wafer by photoresist, and backside DRIE of the outline of the microscanner is performed using the alignment marks previously etched into the backside of the device wafer.
- the device is soaked in acetone for approximately 12 hours to release device wafer from the handle wafer. Dry oxide etch is performed on the frontside and backside to remove exposed oxide from the mirror surfaces.
- micro mirrors are fabricated with dimensions of 500 ⁇ m x 700 ⁇ m in order to facilitate illumination at 45° incidence by a 500 ⁇ m diameter laser beam, which allows for uncomplicated optical paths and easy integration into an imaging system.
- the present invention provides a microscanner for performing single-fiber confocal endoscopy. While the invention has been particularly shown and described with reference to a preferred embodiment, it will be understood by those skilled in the art that various :hanges in form and detail may be made therein without departing from the spirit and scope Df the invention.
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Geometry (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Mechanical Light Control Or Optical Switches (AREA)
- Micromachines (AREA)
Abstract
L'invention concerne un procédé de fabrication d'un microscanner ayant un micromiroir. Initialement, un microscanner d'entraînement de peigne vertical auto-aligné à deux axes est fabriqué à partir d'une tranche de silicium de silicium-sur-isolant-silicium (SOI) liée. En déposant un film fin d'aluminium sur la surface, une tranche de silicium SOI peut assurer environ 90 % de réflectivité à 633 nm. Une tolérance de désalignement de 2,5 µm peut être atteinte pour l'étape d'alignement arrière critique. Par suite, des images confocales avec un réseau de 1 µm peuvent être acquises en utilisant un microscanner ayant des miroirs de tranche en silicium SOI.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US96541707P | 2007-08-20 | 2007-08-20 | |
US60/965,417 | 2007-08-20 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2009026232A1 true WO2009026232A1 (fr) | 2009-02-26 |
Family
ID=40378570
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2008/073486 WO2009026232A1 (fr) | 2007-08-20 | 2008-08-18 | Appareil pour effectuer une endoscopie confocale |
Country Status (1)
Country | Link |
---|---|
WO (1) | WO2009026232A1 (fr) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010137009A1 (fr) * | 2009-05-24 | 2010-12-02 | Btendo Ltd | Appareil moems comprenant un dispositif d'entraînement à peigne et son procédé de fabrication |
CN103086316A (zh) * | 2011-10-28 | 2013-05-08 | 中国科学院上海微系统与信息技术研究所 | Mems垂直梳齿微镜面驱动器的制作方法 |
WO2021134688A1 (fr) * | 2019-12-31 | 2021-07-08 | 瑞声声学科技(深圳)有限公司 | Procédé de production de pilote mems |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5511428A (en) * | 1994-06-10 | 1996-04-30 | Massachusetts Institute Of Technology | Backside contact of sensor microstructures |
US20010021058A1 (en) * | 1997-08-27 | 2001-09-13 | The Microoptical Corporation | Method of fabrication of a torsional micro-mechanical mirror system |
US20010048784A1 (en) * | 2000-03-24 | 2001-12-06 | Behrang Behin | Two-dimensional gimbaled scanning actuator with vertical electrostatic comb-drive for actuation and/or sensing |
US7177063B2 (en) * | 2003-08-12 | 2007-02-13 | Terraop Ltd. | Bouncing mode operated scanning micro-mirror |
-
2008
- 2008-08-18 WO PCT/US2008/073486 patent/WO2009026232A1/fr active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5511428A (en) * | 1994-06-10 | 1996-04-30 | Massachusetts Institute Of Technology | Backside contact of sensor microstructures |
US20010021058A1 (en) * | 1997-08-27 | 2001-09-13 | The Microoptical Corporation | Method of fabrication of a torsional micro-mechanical mirror system |
US20010048784A1 (en) * | 2000-03-24 | 2001-12-06 | Behrang Behin | Two-dimensional gimbaled scanning actuator with vertical electrostatic comb-drive for actuation and/or sensing |
US7177063B2 (en) * | 2003-08-12 | 2007-02-13 | Terraop Ltd. | Bouncing mode operated scanning micro-mirror |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010137009A1 (fr) * | 2009-05-24 | 2010-12-02 | Btendo Ltd | Appareil moems comprenant un dispositif d'entraînement à peigne et son procédé de fabrication |
US8305670B2 (en) | 2009-05-24 | 2012-11-06 | Stmicroelectronics International N.V. | MOEMS apparatus and a method for manufacturing same |
US8693074B2 (en) | 2009-05-24 | 2014-04-08 | Stmicroelectronics International N.V. | MOEMS apparatus and a method for manufacturing same |
US9459447B2 (en) | 2009-05-24 | 2016-10-04 | Stmicroelectronics International N.V. | MOEMS apparatus and a method for manufacturing same |
CN103086316A (zh) * | 2011-10-28 | 2013-05-08 | 中国科学院上海微系统与信息技术研究所 | Mems垂直梳齿微镜面驱动器的制作方法 |
WO2021134688A1 (fr) * | 2019-12-31 | 2021-07-08 | 瑞声声学科技(深圳)有限公司 | Procédé de production de pilote mems |
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