WO2009022573A1 - Method for thin film formation - Google Patents

Method for thin film formation Download PDF

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Publication number
WO2009022573A1
WO2009022573A1 PCT/JP2008/064007 JP2008064007W WO2009022573A1 WO 2009022573 A1 WO2009022573 A1 WO 2009022573A1 JP 2008064007 W JP2008064007 W JP 2008064007W WO 2009022573 A1 WO2009022573 A1 WO 2009022573A1
Authority
WO
WIPO (PCT)
Prior art keywords
thin film
substrate
film formation
formation
targets
Prior art date
Application number
PCT/JP2008/064007
Other languages
French (fr)
Japanese (ja)
Inventor
Yasuhiko Akamatsu
Yuichi Oishi
Makoto Arai
Junya Kiyota
Satoru Ishibashi
Original Assignee
Ulvac, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac, Inc. filed Critical Ulvac, Inc.
Priority to CN2008801028384A priority Critical patent/CN101778962B/en
Publication of WO2009022573A1 publication Critical patent/WO2009022573A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3444—Associated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Physical Vapour Deposition (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

This invention provides a method for thin film formation, which, in the formation of an oxide film by reactive sputtering, even when the thin film formation is carried out by a CVD process in the subsequent step, can prevent a lowering in oxygen concentration around the interface of the film and a substrate to avoid a lowering in adhesive strength between the substrate and the oxide film. While introducing a sputter gas and a reactive gas into a sputter chamber (11a) in a vacuum atmosphere, electric power is applied to targets (41a) to (41h) arranged so as to face a substrate (S) to be treated within the sputter chamber (11a), and the targets are sputtered by ions in a plasma atmosphere to form a predetermined thin film on the surface of the substrate by reactive sputtering. In this case, a region having a high reactive gas component concentration is formed in a period where the thin film is formed to a predetermined thickness.
PCT/JP2008/064007 2007-08-10 2008-08-05 Method for thin film formation WO2009022573A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2008801028384A CN101778962B (en) 2007-08-10 2008-08-05 Method for thin film formation

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-208789 2007-08-10
JP2007208789A JP5186152B2 (en) 2007-08-10 2007-08-10 Thin film formation method

Publications (1)

Publication Number Publication Date
WO2009022573A1 true WO2009022573A1 (en) 2009-02-19

Family

ID=40350627

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/064007 WO2009022573A1 (en) 2007-08-10 2008-08-05 Method for thin film formation

Country Status (5)

Country Link
JP (1) JP5186152B2 (en)
KR (1) KR101209019B1 (en)
CN (1) CN101778962B (en)
TW (1) TWI433950B (en)
WO (1) WO2009022573A1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5339965B2 (en) 2009-03-02 2013-11-13 株式会社アルバック AC power supply for sputtering equipment
JP5604056B2 (en) * 2009-05-15 2014-10-08 関東化学株式会社 Etching solution for copper-containing laminated film
US20140083841A1 (en) * 2011-05-13 2014-03-27 Sharp Kabushiki Kaisha Thin film-forming method
CN102978570B (en) * 2012-11-26 2014-10-08 蔡莳铨 Metal evaporation film and intermediate for preparing metal evaporation film and related preparation method of metal evaporation film
CN104064454A (en) 2014-06-11 2014-09-24 京东方科技集团股份有限公司 Thin film and array substrate preparation method and array substrate
KR101673224B1 (en) * 2014-11-17 2016-11-16 전영권 Solar cells and manufacturing method for the same
JP7007457B2 (en) * 2018-03-16 2022-01-24 株式会社アルバック Film formation method

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63114965A (en) * 1986-11-01 1988-05-19 Tosoh Corp Production of laminated film
JP2003268542A (en) * 2002-03-18 2003-09-25 Ulvac Japan Ltd Film deposition system and film deposition method
JP2007092112A (en) * 2005-09-28 2007-04-12 Dowa Holdings Co Ltd Nitrogen-containing chromium film, production method therefor and machine member

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001192822A (en) 2000-01-07 2001-07-17 Nippon Sheet Glass Co Ltd Film deposition method, and article obtained by the same
JP4780972B2 (en) * 2004-03-11 2011-09-28 株式会社アルバック Sputtering equipment
JP2006302975A (en) * 2005-04-15 2006-11-02 Toshiba Corp Semiconductor device and manufacturing method thereof
CN1966758A (en) * 2005-11-18 2007-05-23 电子科技大学 Process for preparing vanadium oxide film
JP5291907B2 (en) * 2007-08-31 2013-09-18 株式会社アルバック Sputtering equipment

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63114965A (en) * 1986-11-01 1988-05-19 Tosoh Corp Production of laminated film
JP2003268542A (en) * 2002-03-18 2003-09-25 Ulvac Japan Ltd Film deposition system and film deposition method
JP2007092112A (en) * 2005-09-28 2007-04-12 Dowa Holdings Co Ltd Nitrogen-containing chromium film, production method therefor and machine member

Also Published As

Publication number Publication date
KR101209019B1 (en) 2012-12-10
JP5186152B2 (en) 2013-04-17
TW200912022A (en) 2009-03-16
CN101778962B (en) 2012-11-28
TWI433950B (en) 2014-04-11
JP2009041082A (en) 2009-02-26
KR20100041821A (en) 2010-04-22
CN101778962A (en) 2010-07-14

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