WO2009016192A3 - Anordnung mit zumindest einem halbleiterbauelement, insbesondere einem leistungshalbleiterbauelement zur leistungssteuerung hoher ströme - Google Patents
Anordnung mit zumindest einem halbleiterbauelement, insbesondere einem leistungshalbleiterbauelement zur leistungssteuerung hoher ströme Download PDFInfo
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- WO2009016192A3 WO2009016192A3 PCT/EP2008/059968 EP2008059968W WO2009016192A3 WO 2009016192 A3 WO2009016192 A3 WO 2009016192A3 EP 2008059968 W EP2008059968 W EP 2008059968W WO 2009016192 A3 WO2009016192 A3 WO 2009016192A3
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- semiconductor component
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- high currents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L24/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
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- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
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Abstract
Es wird eine Anordnung mit zumindest einem Halbleiterbauelement (8; 101-1, 101-2, 101-3), insbesondere einem Leistungshalbleiterbauelement zur Leistungssteuerung hoher Ströme beschrieben, bei der das zumindest eine Halbleiterbauelement (8; 101-1, 101-2, 101-3) je wenigstens zwei getrennt voneinander angeordnete elektrische Anschlussflächen aufweist und auf einem gemeinsamen Trägerkörper (1) elektrisch isoliert von diesem angeordnet ist. Des Weiteren sind auf dem Trägerkörper (1) neben dem zumindest einen Halbleiterbauelement (8; 101-1, 101-2, 101-3) und von dem zumindest einen Halbleiterbauelement (8; 101-1, 101-2, 101-3) elektrisch isoliert eine erste und eine zweite Stromschiene (12, 13) befestigt. Eine elektrische Anschlussfläche des zumindest einen Halbleiterbauelements (8; 101-1, 101-2, 101-3) ist elektrisch mit der ersten Stromschiene (12, 13) verbunden und eine andere elektrische Anschlussfläche dieses Halbleiterbauelements (8; 101- 1, 101-2, 101-3) ist elektrisch mit der zweiten Stromschiene (12, 13) verbunden. Die erste und/oder die zweite Stromschiene (12, 13) weist Abschnitte auf, die an gegenüberliegenden Seiten des Halbleiterbauelements (8; 101-1, 101-2, 101-3) angeordnet sind, wobei die mit der betreffenden Stromschiene (12, 13) elektrisch verbundene Anschlussfläche von beiden Abschnitten mit einem Strom beaufschlagt wird.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2008801096625A CN101809741B (zh) | 2007-08-01 | 2008-07-30 | 用于大电流的功率控制的具有至少一个半导体器件、尤其是功率半导体器件的装置 |
ES08786603T ES2392206T3 (es) | 2007-08-01 | 2008-07-30 | Configuración con al menos un componente semiconductor, en particular un componente semiconductor de potencia para el control de la potencia de corrientes de alta intensidad |
EP20080786603 EP2174350B1 (de) | 2007-08-01 | 2008-07-30 | Anordnung mit zumindest einem halbleiterbauelement, insbesondere einem leistungshalbleiterbauelement zur leistungssteuerung hoher ströme |
PL08786603T PL2174350T3 (pl) | 2007-08-01 | 2008-07-30 | Układ z co najmniej jednym elementem półprzewodnikowym, zwłaszcza elementem półprzewodnikowym mocy do sterowania mocą prądów wielkich |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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DE102007036048.9 | 2007-08-01 | ||
DE200710036048 DE102007036048A1 (de) | 2007-08-01 | 2007-08-01 | Anordnung mit zumindest einem Halbleiterbauelement, insbesondere einem Leistungshalbleiterbauelement zur Leistungssteuerung hoher Ströme |
Publications (2)
Publication Number | Publication Date |
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WO2009016192A2 WO2009016192A2 (de) | 2009-02-05 |
WO2009016192A3 true WO2009016192A3 (de) | 2009-07-09 |
Family
ID=40175762
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/EP2008/059968 WO2009016192A2 (de) | 2007-08-01 | 2008-07-30 | Anordnung mit zumindest einem halbleiterbauelement, insbesondere einem leistungshalbleiterbauelement zur leistungssteuerung hoher ströme |
Country Status (6)
Country | Link |
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EP (2) | EP2174350B1 (de) |
CN (1) | CN101809741B (de) |
DE (1) | DE102007036048A1 (de) |
ES (1) | ES2392206T3 (de) |
PL (1) | PL2174350T3 (de) |
WO (1) | WO2009016192A2 (de) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102014201631B4 (de) * | 2014-01-30 | 2022-02-03 | Robert Bosch Gmbh | Anordnung zum Kontaktieren elektrischer Komponenten |
CN110495087B (zh) * | 2017-04-19 | 2021-03-23 | 三菱电机株式会社 | 半导体模块以及电力变换装置 |
EP3392908B1 (de) * | 2017-04-20 | 2019-07-24 | Infineon Technologies AG | Leistungshalbleiteranordnung mit einem stapel von eine verbesserte geometrie aufweisenden anschlussplatten zur gemeinsamen elektrischen kontaktierungen mehrerer, gleichartiger leistungshalbleiter-schaltelemente |
DE102017217352A1 (de) * | 2017-09-28 | 2019-03-28 | Danfoss Silicon Power Gmbh | Stromschiene und leistungsmodul |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0427143A2 (de) * | 1989-11-07 | 1991-05-15 | IXYS Semiconductor GmbH | Leistungshalbleitermodul |
US5313091A (en) * | 1992-09-28 | 1994-05-17 | Sundstrand Corporation | Package for a high power electrical component |
US5504378A (en) * | 1994-06-10 | 1996-04-02 | Westinghouse Electric Corp. | Direct cooled switching module for electric vehicle propulsion system |
US5637922A (en) * | 1994-02-07 | 1997-06-10 | General Electric Company | Wireless radio frequency power semiconductor devices using high density interconnect |
EP0828341A2 (de) * | 1996-09-06 | 1998-03-11 | Hitachi, Ltd. | Leistungshalbleiteranordnung in modularer Bauart |
WO2003030247A2 (de) * | 2001-09-28 | 2003-04-10 | Siemens Aktiengesellschaft | Verfahren zum kontaktieren elektrischer kontaktflächen eines substrats und vorrichtung aus einem substrat mit elektrischen kontaktflächen |
WO2003032390A2 (de) * | 2001-09-28 | 2003-04-17 | Siemens Aktiengesellschaft | Anordnung mit leistungshalbleiterbauelementen zur leistungssteuerung hoher ströme und anwendung der anordnung |
EP1643625A1 (de) * | 2004-10-04 | 2006-04-05 | Hitachi, Ltd. | Wechselrichtermodul |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0661289A (ja) * | 1992-08-07 | 1994-03-04 | Mitsubishi Electric Corp | 半導体パッケージ及びこれを用いた半導体モジュール |
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2007
- 2007-08-01 DE DE200710036048 patent/DE102007036048A1/de not_active Withdrawn
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2008
- 2008-07-30 EP EP20080786603 patent/EP2174350B1/de not_active Not-in-force
- 2008-07-30 PL PL08786603T patent/PL2174350T3/pl unknown
- 2008-07-30 WO PCT/EP2008/059968 patent/WO2009016192A2/de active Application Filing
- 2008-07-30 ES ES08786603T patent/ES2392206T3/es active Active
- 2008-07-30 EP EP20100015490 patent/EP2290688A3/de not_active Withdrawn
- 2008-07-30 CN CN2008801096625A patent/CN101809741B/zh not_active Expired - Fee Related
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0427143A2 (de) * | 1989-11-07 | 1991-05-15 | IXYS Semiconductor GmbH | Leistungshalbleitermodul |
US5313091A (en) * | 1992-09-28 | 1994-05-17 | Sundstrand Corporation | Package for a high power electrical component |
US5637922A (en) * | 1994-02-07 | 1997-06-10 | General Electric Company | Wireless radio frequency power semiconductor devices using high density interconnect |
US5504378A (en) * | 1994-06-10 | 1996-04-02 | Westinghouse Electric Corp. | Direct cooled switching module for electric vehicle propulsion system |
EP0828341A2 (de) * | 1996-09-06 | 1998-03-11 | Hitachi, Ltd. | Leistungshalbleiteranordnung in modularer Bauart |
WO2003030247A2 (de) * | 2001-09-28 | 2003-04-10 | Siemens Aktiengesellschaft | Verfahren zum kontaktieren elektrischer kontaktflächen eines substrats und vorrichtung aus einem substrat mit elektrischen kontaktflächen |
WO2003032390A2 (de) * | 2001-09-28 | 2003-04-17 | Siemens Aktiengesellschaft | Anordnung mit leistungshalbleiterbauelementen zur leistungssteuerung hoher ströme und anwendung der anordnung |
EP1643625A1 (de) * | 2004-10-04 | 2006-04-05 | Hitachi, Ltd. | Wechselrichtermodul |
Also Published As
Publication number | Publication date |
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PL2174350T3 (pl) | 2013-01-31 |
ES2392206T3 (es) | 2012-12-05 |
EP2174350B1 (de) | 2012-08-29 |
EP2290688A2 (de) | 2011-03-02 |
CN101809741B (zh) | 2013-05-22 |
EP2290688A3 (de) | 2011-10-26 |
EP2174350A2 (de) | 2010-04-14 |
CN101809741A (zh) | 2010-08-18 |
WO2009016192A2 (de) | 2009-02-05 |
DE102007036048A1 (de) | 2009-02-05 |
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