WO2009016092A3 - Electrode de composant optoelectronique organique, comprenant au moins une couche d'un oxyde transparent revêtue d'une couche metallique, et composant optoelectronique organique correspondant - Google Patents

Electrode de composant optoelectronique organique, comprenant au moins une couche d'un oxyde transparent revêtue d'une couche metallique, et composant optoelectronique organique correspondant Download PDF

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Publication number
WO2009016092A3
WO2009016092A3 PCT/EP2008/059719 EP2008059719W WO2009016092A3 WO 2009016092 A3 WO2009016092 A3 WO 2009016092A3 EP 2008059719 W EP2008059719 W EP 2008059719W WO 2009016092 A3 WO2009016092 A3 WO 2009016092A3
Authority
WO
WIPO (PCT)
Prior art keywords
optoelectronic component
layer
organic optoelectronic
oxide coated
transparent oxide
Prior art date
Application number
PCT/EP2008/059719
Other languages
English (en)
Other versions
WO2009016092A2 (fr
Inventor
Jean-Christian Bernede
Original Assignee
Univ Nantes
Jean-Christian Bernede
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Nantes, Jean-Christian Bernede filed Critical Univ Nantes
Publication of WO2009016092A2 publication Critical patent/WO2009016092A2/fr
Publication of WO2009016092A3 publication Critical patent/WO2009016092A3/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H01L31/022475—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of indium tin oxide [ITO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H01L31/022483—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
    • H10K85/146—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE poly N-vinylcarbazol; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/321—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
    • H10K85/324—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising aluminium, e.g. Alq3
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
  • Laminated Bodies (AREA)
  • Non-Insulated Conductors (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

L'invention a pour objet une électrode de composant optoélectronique de type organique, comprenant au moins une couche d'au moins un oxyde transparent conducteur portée par un substrat, caractérisée en ce que ledit oxyde transparent conducteur est revêtu d'une couche d'au moins un matériau métallique, ladite couche présentant une épaisseur comprise entre 0,5 nm et 1,5 nm.
PCT/EP2008/059719 2007-07-27 2008-07-24 Electrode de composant optoelectronique organique, comprenant au moins une couche d'un oxyde transparent revêtue d'une couche metallique, et composant optoelectronique organique correspondant WO2009016092A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0705502A FR2919428B1 (fr) 2007-07-27 2007-07-27 Electrode de composant optoelectronique,comprenant au moins une couche d'un oxyde transparent revetue d'une couche metallique,et composant optoelectronique correspondant.
FR07/05502 2007-07-27

Publications (2)

Publication Number Publication Date
WO2009016092A2 WO2009016092A2 (fr) 2009-02-05
WO2009016092A3 true WO2009016092A3 (fr) 2009-04-23

Family

ID=39272484

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2008/059719 WO2009016092A2 (fr) 2007-07-27 2008-07-24 Electrode de composant optoelectronique organique, comprenant au moins une couche d'un oxyde transparent revêtue d'une couche metallique, et composant optoelectronique organique correspondant

Country Status (2)

Country Link
FR (1) FR2919428B1 (fr)
WO (1) WO2009016092A2 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2256839B1 (fr) 2009-05-28 2019-03-27 IMEC vzw Cellules photovoltaïques à une seule jonction ou multijonctions et procédé pour leur fabrication
ES2364309B1 (es) 2010-02-19 2012-08-13 Institut De Ciencies Fotoniques, Fundacio Privada Electrodo transparente basado en la combinación de óxidos, metales y óxidos conductores transparentes.

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4584427A (en) * 1984-10-22 1986-04-22 Atlantic Richfield Company Thin film solar cell with free tin on tin oxide transparent conductor
JPS61203667A (ja) * 1985-03-06 1986-09-09 Fujitsu Ltd アモルフアスシリコン型フオトダイオ−ド
JPH10308285A (ja) * 1997-05-01 1998-11-17 Asahi Glass Co Ltd 有機エレクトロルミネッセンス素子の電極構造及び有機エレクトロルミネッセンス素子
DE102005027961A1 (de) * 2005-06-16 2007-01-04 Siemens Ag Semitransparente Multilayer-Elektrode
US20070028959A1 (en) * 2005-08-02 2007-02-08 Samsung Sdi Co., Ltd Electrode for photoelectric conversion device containing metal element and dye-sensitized solar cell using the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4584427A (en) * 1984-10-22 1986-04-22 Atlantic Richfield Company Thin film solar cell with free tin on tin oxide transparent conductor
JPS61203667A (ja) * 1985-03-06 1986-09-09 Fujitsu Ltd アモルフアスシリコン型フオトダイオ−ド
JPH10308285A (ja) * 1997-05-01 1998-11-17 Asahi Glass Co Ltd 有機エレクトロルミネッセンス素子の電極構造及び有機エレクトロルミネッセンス素子
DE102005027961A1 (de) * 2005-06-16 2007-01-04 Siemens Ag Semitransparente Multilayer-Elektrode
US20070028959A1 (en) * 2005-08-02 2007-02-08 Samsung Sdi Co., Ltd Electrode for photoelectric conversion device containing metal element and dye-sensitized solar cell using the same

Also Published As

Publication number Publication date
WO2009016092A2 (fr) 2009-02-05
FR2919428A1 (fr) 2009-01-30
FR2919428B1 (fr) 2010-01-01

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