WO2009011364A1 - 電子線、x線またはeuv光を用いたリソグラフィー法に用いられるレジスト組成物 - Google Patents
電子線、x線またはeuv光を用いたリソグラフィー法に用いられるレジスト組成物 Download PDFInfo
- Publication number
- WO2009011364A1 WO2009011364A1 PCT/JP2008/062847 JP2008062847W WO2009011364A1 WO 2009011364 A1 WO2009011364 A1 WO 2009011364A1 JP 2008062847 W JP2008062847 W JP 2008062847W WO 2009011364 A1 WO2009011364 A1 WO 2009011364A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- group
- ray
- electron beam
- resist composition
- composition used
- Prior art date
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Materials For Photolithography (AREA)
Abstract
電子線、X線またはEUV光を用いたリソグラフィー法に用いられるレジスト組成物を提供する。
主鎖に結合したフッ素原子または含フッ素アルキル基を有し、側鎖に芳香族環構造を有する繰り返し単位(F)を含む酸の作用によりアルカリ溶解性が増大する含フッ素重合体(PF)と、酸発生剤とを含む、電子線、X線またはEUV光を用いたリソグラフィー法に用いられるレジスト組成物。たとえば、前記繰り返し単位(F)は、下記繰り返し単位(FV1)、(FV2)、(FV3)および(FV4)からなる群から選ばれる少なくとも1種の繰り返し単位(FVn)である(XF1は-Fまたは-CF3を、r1およびr2はそれぞれ独立に0~2の整数(r1とr2の和は1~3の整数である。)を、YFはアルキル基、アルコキシアルキル基、アルキルカルボニル基およびアルコキシカルボニルアルキル基からなる群から選ばれる、フッ素原子を有していてもよい炭素数1~20の基、WFはアルキル基、アルコキシアルキル基およびアルコキシカルボニルアルキル基からなる群から選ばれる、フッ素原子を有していてもよい炭素数1~20の基、を示す。)。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009523660A JPWO2009011364A1 (ja) | 2007-07-18 | 2008-07-16 | 電子線、x線またはeuv光を用いたリソグラフィー法に用いられるレジスト組成物 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007187462 | 2007-07-18 | ||
JP2007-187462 | 2007-07-18 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2009011364A1 true WO2009011364A1 (ja) | 2009-01-22 |
Family
ID=40259696
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/062847 WO2009011364A1 (ja) | 2007-07-18 | 2008-07-16 | 電子線、x線またはeuv光を用いたリソグラフィー法に用いられるレジスト組成物 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPWO2009011364A1 (ja) |
TW (1) | TW200921279A (ja) |
WO (1) | WO2009011364A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9182662B2 (en) | 2012-02-15 | 2015-11-10 | Rohm And Haas Electronic Materials Llc | Photosensitive copolymer, photoresist comprising the copolymer, and articles formed therefrom |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05502034A (ja) * | 1990-04-26 | 1993-04-15 | ヘキスト・アクチェンゲゼルシャフト | α―フルオロスチレン類の製造方法 |
JP2002311588A (ja) * | 2001-04-11 | 2002-10-23 | Matsushita Electric Ind Co Ltd | パターン形成材料及びパターン形成方法 |
JP2003344994A (ja) * | 2002-05-28 | 2003-12-03 | Fuji Photo Film Co Ltd | 感光性樹脂組成物 |
JP2004012898A (ja) * | 2002-06-07 | 2004-01-15 | Fuji Photo Film Co Ltd | 感光性樹脂組成物 |
JP2004029136A (ja) * | 2002-06-21 | 2004-01-29 | Fuji Photo Film Co Ltd | 感光性樹脂組成物 |
JP2004318115A (ja) * | 2003-03-31 | 2004-11-11 | Fuji Photo Film Co Ltd | ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
-
2008
- 2008-07-16 WO PCT/JP2008/062847 patent/WO2009011364A1/ja active Application Filing
- 2008-07-16 JP JP2009523660A patent/JPWO2009011364A1/ja active Pending
- 2008-07-18 TW TW97127339A patent/TW200921279A/zh unknown
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05502034A (ja) * | 1990-04-26 | 1993-04-15 | ヘキスト・アクチェンゲゼルシャフト | α―フルオロスチレン類の製造方法 |
JP2002311588A (ja) * | 2001-04-11 | 2002-10-23 | Matsushita Electric Ind Co Ltd | パターン形成材料及びパターン形成方法 |
JP2003344994A (ja) * | 2002-05-28 | 2003-12-03 | Fuji Photo Film Co Ltd | 感光性樹脂組成物 |
JP2004012898A (ja) * | 2002-06-07 | 2004-01-15 | Fuji Photo Film Co Ltd | 感光性樹脂組成物 |
JP2004029136A (ja) * | 2002-06-21 | 2004-01-29 | Fuji Photo Film Co Ltd | 感光性樹脂組成物 |
JP2004318115A (ja) * | 2003-03-31 | 2004-11-11 | Fuji Photo Film Co Ltd | ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9182662B2 (en) | 2012-02-15 | 2015-11-10 | Rohm And Haas Electronic Materials Llc | Photosensitive copolymer, photoresist comprising the copolymer, and articles formed therefrom |
Also Published As
Publication number | Publication date |
---|---|
TW200921279A (en) | 2009-05-16 |
JPWO2009011364A1 (ja) | 2010-09-24 |
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