WO2009006152A2 - Method and apparatus for a voltage/current probe test arrangements - Google Patents

Method and apparatus for a voltage/current probe test arrangements Download PDF

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Publication number
WO2009006152A2
WO2009006152A2 PCT/US2008/068156 US2008068156W WO2009006152A2 WO 2009006152 A2 WO2009006152 A2 WO 2009006152A2 US 2008068156 W US2008068156 W US 2008068156W WO 2009006152 A2 WO2009006152 A2 WO 2009006152A2
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WIPO (PCT)
Prior art keywords
generator
voltage
impedance circuit
diagnostic tool
arrangement
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PCT/US2008/068156
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French (fr)
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WO2009006152A3 (en
Inventor
Gary M. Lemson
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Lam Research Corp
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Lam Research Corp
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Priority to CN2008801055131A priority Critical patent/CN101796624B/en
Priority to JP2010515069A priority patent/JP5432134B2/en
Priority to KR1020107001880A priority patent/KR101423364B1/en
Publication of WO2009006152A2 publication Critical patent/WO2009006152A2/en
Publication of WO2009006152A3 publication Critical patent/WO2009006152A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R35/00Testing or calibrating of apparatus covered by the other groups of this subclass
    • G01R35/005Calibrating; Standards or reference devices, e.g. voltage or resistance standards, "golden" references
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32917Plasma diagnostics
    • H01J37/32935Monitoring and controlling tubes by information coming from the object and/or discharge
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/0046Arrangements for measuring currents or voltages or for indicating presence or sign thereof characterised by a specific application or detail not covered by any other subgroup of G01R19/00
    • G01R19/0061Measuring currents of particle-beams, currents from electron multipliers, photocurrents, ion currents; Measuring in plasmas

Definitions

  • Radio frequency (RFl elecUical measurements may be utilized m a diagnostic tool for monitor and or control of plasma electrical properties to maintain tight coutiol of p ⁇ ocess parameters during plasma processing.
  • RF electrical measurements e.g. voltage (V ) and ' O ⁇ current (1).
  • V voltage
  • ' O ⁇ current (1) may be collected by a probe, c g., TCP Kiyo V " " or TCP Kiyo 45 VI " p ⁇ obe available from Lam Research Corp. of fremont, California, for plasma diagnostic
  • the plasma diagnostic data from the probe maj allow for determination of plasma potential, floating potential, election density, and/or election energv distribution function.
  • accurate ⁇ alues for the plasma parameters may be difficult to determine because of the complexities m ⁇ oh ed in calibration and/ ⁇ r control ⁇ f high RF voltage and-'or current probe(s).
  • a high RF and or eu ⁇ eut test system with a high RF power generate! is needed.
  • a typical commercially available high power RF generator may deliver up to 500 volts at an accuracy of about 10 percent in a 50 Ohms system
  • the RF voltages being measured diuing plasma processing may exceed 6,000 volts peak with a minimum accuracy requirement of ab ⁇ t 1 5 percent Uaceable back to a National Institute of Standards and Technology (KlSTl standard.
  • KlSTl standard National Institute of Standards and Technology
  • ⁇ Para 4 Referring to tig, 1, a simplified schematic of a prior art RF delivery path 100 for the voltage test a ⁇ angeraent is shown
  • the RF powet is supplied by a single air cooled 300 Watt generatoT 102, i e maximum output at 50 Ohms impedance operating at about 13.50
  • the RF power output from generator 102 is claimed by coaxial cables to a coaxial switch network 122 jPara 5j
  • coaxial switch network 122 may be configured with a first switch (SW 1 ) 104 ami a second switch (SW2) 106.
  • ⁇ 20 decibel (db) coaxial attenuator 110 is placed in the RF delivery path to enhance low power functionality by controlling SVVl 104 and S VV2 ! 06, .Attenuator 110 is employed to t educe power output ftom high RF powet generator 102 to pro ⁇ ide stability in the lower voltage test range
  • SWl 104 and SW2 106 may be switched to select attenuate! HO ⁇ j or the higher voltage ⁇ vfige ⁇ f about 2,000 to beyond 6,000 peak, SWl 104 and SW2 I Oo may be switched to the high Ri- delivery path 108.
  • the attenuator is switched in oi switched out, the power is routed to a V-load network 1 12.
  • a position indicator i ! 8 is coupled to SWl 104 and SW 2 ⁇ 06, Position indicator ⁇ 18 serves to monitor whether attenuator ⁇ 10 has beers selected to pre ⁇ e ⁇ t hot switching
  • hot switching refers to switching when there is output power coming out from the generator Hot switching is not desirable during high RF power operations
  • I Para 9j In general, commercially available high power RF generator 102 operates at about 50 Ohms with. 3(K) watts of power. When operating a 50 Ohms system, enormous amounts of power, is needed to attain the desired high RF voltages, e g 10 kilowatts foi 1000 peak, to 360 kilowatts for 6,000 peak In order foi standard off-the-shelf RF generators to work, the RF generator may be integrated into a high impedance circuit to generate the highe? necessary for calibration of the piobes. V ⁇ !oad network 1 ⁇ 2 is an example of a high Impedance circuit that is tuned to deiher the required range
  • FIg 2 shoves a simplified schematic of a prior art ⁇ oitage ioad network arrangement 200 In the example of Hg. 2.
  • RF power is supplied by a 50 Ohms Rh generator 202.
  • the RF power signal is passed through a high impedance matched V-load network eiiciut 212 to generate high voltages necessary for plasma applications.
  • I Para 11 j V-load netw orL circuit 2 ! 2 is configui ed with a first ⁇ aiiable capacitor ⁇ ( ' 1 ) 204, a second variable capacitor (C2) 206. a third variable capacitor (C3) 208, and an inductor 210.
  • the V-load network 212 is tuned to resonate at about 13.5c> Mil/ In this resonant system, the impedance needs to he matched between generator 202 and an output 216 Othenuse gene ⁇ ator 202 ma> mil in an unstable condition and possiblv shut dow n
  • the input impedance from RF geneiator 202 of ⁇ O Ohms output 2 !6 from ⁇ ' ⁇ load network eucuit 212 is tuned to match the impedance of a probe 218 and a ⁇ -ref 214 flie V- ref output signal 214 is sent to an Rh ⁇ ohmeter ( RF ⁇ VD 215 Hence, in a matched netw oi k, the high impedance allows ⁇ etv high voltages to be sustained at output node 216 However, in order to cahbiate piobe 2 ! H the high ⁇ oltage output needs to bettei accmacs than the capability of off-the-s
  • the povvci signal output ftom generatoi ⁇ 02 is routed thiough a switched network >22 to a ⁇ ' -load nemoik 312 From ⁇ ' -load netwoik 312, the signal, V-ref output 314, is measured
  • the V-ief-output signal 314 is sent to an RF ⁇ oltmetei (RF ⁇ M) > 1 1 ⁇
  • the signal fiora RFV M 315 is sent as data to a general-purpose interface bus (GPlB) 318 and is read b ⁇ computer 316 f Para 14]
  • afoiememioued closed-loop RI control a ⁇ angeoient data from GPIB 318 is compaied with sotHa ⁇ e-de fined set point 324 Foi example, if a ⁇ oltage at the V ⁇ load network ?
  • a software-defined set point 324 of 200 ⁇ olts peak ma> be set in a closed-loop control, foi example, the ⁇ o Stage ⁇ alue fiom the data coming back over GPlB 318 ⁇ iav be compared to geneiate the contiol Mgnal, DAQ ⁇ 20.
  • going back to RF gene ⁇ ator 302 ⁇ lie process may be ite ⁇ ated through a conttol loop algomhm to achie ⁇ e a ⁇ - ⁇ of oiupiu withm the desned accuiacv, e g , i 5 peicem, of softwaie- defined set point 324
  • the invention relates, in an embodiment, to a diagnostic tool for performing electrical measurements to calibrate a plasma processing chamber probe.
  • the diagnostic tool includes an RF generator.
  • the diagnostic tool also includes a first impedance circuit.
  • the first impedance circuit is a voltage-load network, configured to deliver RF outputs from the RF generator for voltage measurements when RF power fioni the RF generator h delhered to the first impedance circuit, wherein the RF ⁇ oltage outputs are in the range of about 200 ⁇ ohs peak to about 6, 100 ⁇ olts peak.
  • the diagnostic tool further includes a second impedance circuit.
  • the second impedance circuit is a current-load netw ork.
  • the diagnostic tool yet further includes a coaxial switch network arrangement configured to provide switchahle RF delivery paths to deliver the Rf power from the RF generator to one of the first impedance circuit and the second impedance circuit.
  • FIG. 1 illustrates a simplified schematic of a prior art RF delivery path for the voltage test arrangement.
  • FIG 2 illustrates a simplified schematic of a piior art voltage load network arrangement
  • FIG 3 illustrates a simplified schematic of a prior ait RF control airangement
  • FIG. 4 illustrates in accordance with an embodiment of the present invention, a simplified schematic of an RF dcihery path foi the (Vl) test arrangement
  • FIG. 5 illustrates in accordance w ith an embodiment of the inxention. shows a simplified schematic of a current load network arrangement.
  • FIG. 6 illustrates in accordance w ith an embodiment of the inxention. shows a simplified schematic of an Rt- ⁇ oltage-control sijmai-flow ariangement.
  • ⁇ Para 251 FlG 7 illustrates in accordance with an embodiment of the invention, a flow diagram of a eomiol loop algorithm in block diagram foini for sustaining stable RF voltages
  • FKi S illustrates in accoi dance with art embodiment of the invention, a simplified schematic of a system interlock for a voltage-current (Vl) test fixture.
  • FIG 0 illustrates in accordance w ith an embodiment of the simplified schematic of a probe signal routing arrangement
  • ⁇ Para 29 Various embodiments are described herein below, including methods and techniques, ⁇ t should be kept in mmd that the invention might also cover articles of manufacture that includes a computer readable medium on which computer-readable instructions for can) ing out embodiments of the inventive technique are stored
  • the computer readable medium may include, for example, semiconductor, magnetic, opto- i ⁇ agnetic.
  • the im ention may also apparatuses for practicing embodiments of the ention
  • Such apparatus may include circuits, dedicated and/or programmable, to cam- out tasLs pertaining to embodiments of the ⁇ n ⁇ ention
  • Examples of such apparatus include a general-purpose computer and or a dedicated computing de ⁇ ice when appropriately programmed and may include a combination of a computer computing de ⁇ ice and dedicated programmable circuits adapted for the v arious tasks pertaining to embodiments of the iiix ention.
  • ⁇ Para 3Oj in accordance with embodiments of the ention, there ate provided methods and arrangements for a diagnostic tool to perform electrical measurements of high potential RF ⁇ oltages and currents to calibrate probes for plasma applications
  • Fmbodiments of the im ention include integrating a commercially RF generator with a high impedance circuit to produce high peak which may be used to calibrate ⁇ oitage and or current probes RF electrical measuiements attained from the calibrated probes may be utilized for monito ⁇ and/or control of plasma electrical ptoperties to maintain tight control of process parameters during plasma processing
  • a diagnostic tool e g., a ⁇ oltage-current test arrangement
  • a coaxial switch network may be configured with a coaxial switch network to route high Rt- power output from a commercially ax ailabie 50 Ohms generator to an 1-load or V- load network
  • coaxial switch network maj be configured with a coaxial attenuator to reduce power output from high Rf power generatoi to ide stable measurements at lower in an embodiment, the selection of low or high RF power may be controlled through a set of first ⁇ r second switches.
  • RF power may be selectively routed to either an 1-load network or a V-load network through a third ⁇ ith an embodiment of the invention, the signal conditions and s ⁇ itch positions are sensed and controlled by a softw are algorithm in a computer.
  • high potential RF may be monitoied and controlled to ensure proper delivery of high power RF signals to the selected network in a safe manner.
  • a current-load network is employed to ide a high impedance circuit in a matched network to enable eomme ⁇ ally a ⁇ ailable generator to deliver high potential RF ⁇ oltages.
  • the current-load network is configured as a tuned resonant system to match with the impedance of the RF generator and output signals Hence in a matched network i ⁇ load network w ith high impedance may aliens ⁇ ei ⁇ high cu ⁇ ents to be sustained and definered tioni a commercially available 50 Ohms RF generator
  • an RF ⁇ oltage contiol arrangement may be employed to command an Rh generator to output RF powei to match a predetermined software defined set point
  • a closed-loop softwaie contio! algorithm may be employed to tteiate until the output from either the ⁇ -Ioad netwoik oi the V- load netwoiL is matched to the software-defined set point with about 1 5 peieent accuracy.
  • a control PCB interlock iela> may be employed to enable or disable high RF power generator under predetermined conditions such as a w ater leak, exposed V-i ⁇ ad or t-load Rr or lack of cooling water supply flowing to 1-load
  • the P( 1 B interlock relay may pievem a user from being exposed to high RF voltage if any of the predetermined conditions are met.
  • a control PCB probe signal routing may be employed to allow the signals to be routed through either an 1-load or V -load to measure the cnrrent or ⁇ oitage ⁇ alues from the two different probes.
  • f Para 36 The fcatu ⁇ et> and antages of the imention ma> be better understood with refeience to the figures and discussions that follow Fig. 4 shows, in acco ⁇ da ⁇ e with an embodiment of the present imention, a simplified schematic of an RF delhery path for the (Vl) test airangemeru 4(X)
  • the RF power is supplied by a single air-cooled 600 Watt generator 402, i.e. maximum output at 50 Ohms impedance, operating at about ! * 56 MH/.
  • the RF power output from generator 402 may be routed by coaxial cables to a coaxial sw itch network 422
  • coaxial sw itch network 422 may be configured with a first switch (SWI ) 404 a second sw tteh (S ⁇ 2> 406 and a th ⁇ d switch (S ⁇ 3> 407
  • a 20 decibel (UB) coaxial attenuatoi 410 is placed in the RS ⁇ del ⁇ ery path to enhance low powei functionality b> controlling SWi and-'or SW 2 Attenuator 4iO may be employed to reduce power output from high RF power generatoi 402 to stability in the lower voltage test points
  • SWl 404 and/or SW2 406 may be switched to select attenuator 410
  • SW3 407 may be employed to allow for routing the power to either a V-ioad network 412 or an t-load netwo ⁇ k.424 m accordance with an embodiment of the invention
  • a position indicator 4! 8 may be coupled to SWl 404, SW2 406 .md-'ot SW3 407 Position indicator 4! 8 serves to monitor whether attenuator 410 has been selected to hot switching and oi whether V-lnad network 412 or I-load $ ⁇ itching is not desirable
  • the signals coming from position indicators 418 may be routed through control PCB 414
  • the signal conditions are read back a data acquisition (D ⁇ Q) input/output (I/O) 420 into a computer 4 ⁇ t>
  • the software algorithm in computer 416 interprets the signal conditions to determine whether to proceed or halt the test depending on whethei the switches aie selected correctly
  • V -load network 4 ! 2 is configured in a matched network with a high impedance circuit to enable commercially a ⁇ ailable KJr generator 402 to deliver high Ri j ⁇ oltage outputs
  • a ⁇ ailable KJr generator 402 to deliver high Ri j ⁇ oltage outputs
  • v ⁇ ith l-load nerw ork 424 in addition to V -load network 4 ! 2 and the appiopriate s ⁇ itch, SW3 40?
  • the ⁇ -load network 424 may be employed to mciease the capability of the diagnostic tool by enabling current (!) measurements in high RF power applications
  • ⁇ Para 43J Fig. 5. shows a simplified schematic of a current load network arrangement 500.
  • RF p ⁇ wei is supplied by a 50 Ohms RF generator 502
  • An RF power signal may be passed through a high impedance matched I-load network circuit 522 to generate high currents, for example from about 2 amperes to about 50 amperes, necessary for plasma applications, eg , ptobe calibration.
  • l-load network circuit 522 may be configured ⁇ ith a first ⁇ ariable capacitor (Cl ) 504, a second variable capacitor (C2) 506, a third ⁇ at tabic capacitor (C3) 508, a first inductor (Ll) 510, and a second inductor (L2) 512.
  • l-load network 522 may be tuned to resonate at about 13 56 MHz In aforementioned resonant sy stem, the impedance may need to be matched between generator 502 and output 516 otherwise generator 502 may run in an unstable condition and possibly shut down With flic input impedance from RF generator 502 of 50 Ohms, an output 516 from I-load network circuit 522 may be tuned to match a p ⁇ obe 5 ! S. C3 508 and V-ref 5 ! 4 impedance. The V-ref 5 ! 4 output signal is sent to an RF
  • the impedance ⁇ 7 ⁇ of the defined load may be determined by measuring the at C 3 508 Knowing the impedance, the current may be calculated foi a given voltage set point through the current path from output 516 through probe 518 to V-ref 514 The current may be calculated through the simple ielationship of the ⁇ oltage fioin Y-ref 514 di ⁇ l ⁇ e ⁇ by the impedance (Z),
  • the impedance of the defined ioad may be matched by adjusting ⁇ ariable capacitois CJ (504) and C2 (506) of i-load neiwoik 522 fhe tuned network may be matched to resonate ⁇ ith RF generator 502 impedance at 50 Ohms.
  • a matched netwoik allows "very high cu ⁇ cnLs. e g , from about 2 amperes to about 50 ampcies. to be sustained at output node 516 for plasma applications, e g., current (1 ⁇ probe calibration
  • a software algorithm in a computer 616 may send a command to a data acquisition boaid (DAQ) 620 to output an analog .signal to drhe a set poun 626 to a high powei RF generator 602.
  • DAQ data acquisition boaid
  • Set point 626 tells generator ft02 how much power to output.
  • the power signal output from generator 602 may be routed through a switched network 622 to either a Y- load network 612 or an I-load netwoik 624 depending on the desired application
  • a switched network 622 may be routed to either a Y- load network 612 or an I-load netwoik 624 depending on the desired application
  • the pow cr signal may be routed to Y- load network 612 From ⁇ ' -load netw ⁇ rk 612, the signal, V-ref output 614, is measured.
  • the Y-ref output signal 614 may be sent to an RFYM J 615.
  • the signal from RFYM l 615 may be sent as data to a general -purpose interface bus !GPIB) 618 and may be read b> computer 616
  • the power signal may be routed to I -load network 624 in accordance with an embodiment of the intention
  • the signal, V-ief output 614. is measured, fhe Y-ref output signal 614 may be sent to an RFYM2 617.
  • fhe signal from RFYM2 617 may be sent as data to GPIB 618 and may be read by computer 616.
  • ⁇ Para 5Oj In the closed-loop Rl j ⁇ oltage control arrangement data from GPlB ( ⁇ H may be compared with software-defined set point 626. For example, if a voltage at the V- load network 6!
  • a software-defined set point 624 of 2(X) peak may be set " through the closed-ioop control, the ⁇ oltage ⁇ al ⁇ e from the data coining back o ⁇ er CiPIB 018 may be compared to generate the control signal OAQ 620, going back to R> generator 602.
  • Hie process may be iterated through a control loop algorithm to achieve a V- ref output 614 within the desired accuracy, e g.. i 5 percent, of software-defined set point 624.
  • the closed-loop control may be iterated for I-load network 624 to a V-ref output 614 u ithm the desired accuracy .
  • the aforementioned method establishes an accurate, single paiametei. i c, voltage, closed-loop coutioi.
  • Fig, 7 shows, in accordance with an embodiment of the imention, a flow diaj ⁇ am of a control loop algorithm 700 in block diagram form for sustaining stable RF
  • an initial set point 702 is sent to an RF generator 704 and a set point buffer 708
  • Set point 708 may be a memory or registei location in a computei ⁇ not shown I.
  • RF set point 710 may be subtracted from V-ref measurement 706 m step C 12 ⁇ in accordance with an embodiment.
  • the result from step (712) may be multiplied by a gain faetoi 716.
  • the iesult from step 714 may be subtracted from set point loaded into butVei 708
  • the iesult from step (718) may be sent to set point buffer 70S and RF generator 7 04
  • Control loop algorithm " 700 is able to preside accurate voltage control w ithin i 5 percent traceable back ⁇ NlST standards. Since RF current ⁇ allies may be calculated fiom known impedance and accurate ⁇ oltage ⁇ allies, RF current ⁇ alues r ⁇ av also be controlled to about 1.5 percent traceable back to MST standards in accordance ⁇ ith an embodiment
  • Fig 8 shows, in accoi dance ⁇ ith an embodiment of the imention, a simplified schematic of a system interlock 800 for a voltage-current (V l) test fixture Sn the implementation of Fig 8, control PCB 802 may be configured with a first set of connectors 804, second set of connectots 806, an inte ⁇ lock relay 807, a ⁇ l ⁇ st interlock telay switch 808, a second interlock relay switch SiO, a voltage clamp circuit 8 l2, a darlmgton circuit 8 ! i . a 24 volt external power supply 814. and an output from the persona! computer (PO data acquisition card (D ⁇ Q) 816 in an embodiment
  • Control PCB 802 is configured to ide a method of enabling and or disabling high RF power genera to ⁇ 822 under predetermined conditions for safe operations in accordance with an embodiment of the invention.
  • V- ioad interlock switch 818 and, or art I-ioad interlock switch 820 may be employed Both V- ioad interlock switch 818 and, or I -load interlock switch 820 may be located under the hardware fPara 56
  • a w ater cooling supply 824 may be employed to cool a high RF powered I- load system 830 by opening a water 826 and actuating a flow switch 828.
  • I-l ⁇ ad system 830 may be water cooled, a system for detection of v. ater leaks and water flow raaj be employed
  • the power from RF generator 822 may be disabled unless predetermined conditions for the safety interlock system are satisfied In the implementation of Fig. 8, the predetermined conditions may require the hardware intei locks to be engaged, there are no leaks detected, arsd water-cooling is enabled foi control PCB 802 to allow high RF power from generator 822 to be activated,
  • I Para 57 j Consider the situation wherein, for example, the water level switches, e g., a first water level switch 834 and a second water le ⁇ el switch 836, aie part of the signal enable path to the interlock relay for leak detection
  • a signal which may be denved from PC D ⁇ Q 816, may be sent out from control PCB 802
  • the enable signal may be routed tluough dariington circuit 81 1 , -which is a relay driver, and connector 8Ot" to first water le ⁇ el switch 834 and second water !e ⁇ el switch 836 back to PCB interlock relay 802 tluough connectot 806 If the two w ater switches 834 and 836 are closed, the signal may be enabled bv clamp cneuit 812 to allow for control of the switches 80S and 810 within inte ⁇ lock relay 807.
  • RF generator 822 may send high Rl power to the s> stem if the I-load interlock 820 and V-i ⁇ ad interlock 818 are both closed Hence, control PCB 802 only allows high Rl powet flow if a!! the predetermined conditions, i.e.. no watei leaks, water valve is opened, flow switch is closed, and hardware interlocks aie closed, are met Thus, a user may be protected from being exposed to hazards associated w ith operating high RF pow er equipment,
  • ⁇ Para 6Oj Fig 9 show s, in accordance with an embodiment of the invention, a simplified schematic of a probe signal routing arrangement 900.
  • a control PCB 902 is configured with a first connector ⁇ 04, a second connector ⁇ 06, a third coMiectoi 908, a piobe contact detectoi 9K), a first smgle-pole double-throw (SPDT) relay 912.
  • SPDT first smgle-pole double-throw
  • a second SPDT relay 916 a first voltage clamp circuit 914, a second voltage clamp circuit 91 S, a UI !T jseiect 919, a computer input/output ( !/ ⁇ ) ⁇ 920, and a 24 volts pow ei supply 922.
  • V-probe may only be calibrated for ⁇ oltages.
  • the voltage-current test arrangement of the invention ts configured with both a V-load network 924 and an ⁇ -load network 928 in accordance with an embodiment of the imentton.
  • Voltage-current test arrangement may be employed to calibrate Vl-probe for both voltages and or currents Hence, the signal from Vl-probe 926 and/or V oi V! probe 930 needs to be routed to the appropriate channel via contioi PCB 902 m accordance with an embodiment.
  • a user may want to measure a signal l ⁇ o ⁇ i V-load 928 Jbi cither a V-pr ⁇ bc 928 or a Vl-probe 930 Either probe, i.e , V ⁇ pr ⁇ be or Vl-probe, may be measured since both probes voltage measurement capability.
  • ⁇ -ig. 9, ⁇ 16, and or a coaxial switch SW3 938 are in the default positions foi V-load measurement 92S.
  • SPDT relay allows for processing of multiple signals other relay, e g , double-pole double-throw (DPDT) may also be employed ⁇ Para 63 j
  • a UUTjseiect enable signal 919 which may be derived from computer I/O 920, may be roofed to first SPDT relay 912 with first voltage clamp circuit 9 !4 and second SPDT relay 916 with second voltage clamp circuit 918.
  • SPDT relays 9! 2 and 916 are in the default positions for V -load measurement Voltage clamp circuits 914 and 918 are configured to protect darlington driver 921 from highréage spike damages.
  • the high voltage spike may be directed to the -*-5V power supply derived from computer LO 920 to prevent spike damages.
  • contact detector 910 may be configured in the V -load signal path to sense over-voltage contact position in either the V- ⁇ robe or VI-probe.
  • V-probe and/or VI-probe are two probes being tested and calibrated for plasma applications. Each probe may have uniquely discreet signals being tested.
  • Vpk Pos is a peak positive voltage available on both V-probe and/or Vi-probe.
  • VpkJNeg is a peak negative voltage only available on V-probe.
  • the V- probe has two voltage detection outputs. One output is employed to detect the positive form of the waveform and the other output is employed to detect the negative form of the waveform.
  • lpk Pos is a positive current peak only available on VI-probe.
  • the UUT select enable signal 919 is also responsible for routing -KM V power 922 from control PCB 902 through first connector 906 to V or Vl probe 930 in an embodiment.
  • +24 V power 922 is routed from control PCB 902 through second connector 908 to third switch (S W3 ) 938.
  • Coaxial switch SW3 938 in the default position, is configured Io route RF power from a coaxial switch SW2 940 to V-load network 928.
  • RF buffered outputs from V or VJ probe 930 is routed to RFVM 936.
  • digital output signal UUT select 919 also determines the enable to test a VI-probe 926 for the i-load network 924.
  • SPDT relays 912 and 916 switch to the alternate positions to route +24 V DC power 922 over to VI-probe 926 through connector 904.
  • the enable signal routes +24 V DC power 922 over to coaxial switch SW3 938 through connector 908 SW3 938 is selected to the alternate position to route RF power from S ⁇ V2 940 fo I-load 924 RF buffered outputs from VI probe 926 are routed to R FVM
  • embodiments of the invention pro ⁇ ide methods and arrangements tor measuring RF current in addition to voltage values to calibrate ⁇ oitage and or voltage-current probes
  • the probes may be calibrated to measure and control ⁇ oitage and current within 1.5 percent traceable to N ⁇ S 1 " standards.
  • high accuracy RF measurements during plasma processing ma> tianslate to better process control, which niay allow the end user to make w afer or electronic components with finei features

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  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
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Abstract

A diagnostic tool for performing electrical measurements to calibrate a plasma processing chamber probe is provided. The diagnostic tool includes an RF generator. The diagnostic tool also includes a first impedance circuit. The first impedance circuit is a voltage-load network, configured to deliver RF voltage outputs from the RF generator for voltage measurements when RF power from the RF generator is delivered to the first impedance circuit. The diagnostic tool further includes a second impedance circuit. The second impedance circuit is a current-load network, configured to deliver RF current outputs from the RF generator for current measurements when the RF power from the RF generator is delivered to the second impedance circuit. The diagnostic tool further includes a coaxial switch network arrangement configured to provide switchable RF delivery paths to deliver the RF power from the RF generator to one of the first impedance circuit and the second impedance circuit.

Description

METHOD AND APPARATUS FOR A VOLTAGE/CURRENT PROBE
TEST ARRANGEMENTS
BACKGROUND OF TiIF INVENTION
{Para Ij Advances in plasma processing
Figure imgf000002_0001
facilitated gtowth in the sermconducUn industry. During plasma processing, diagnostic tools may be employed to ensure high yield of devices being processed Radio frequency (RFl elecUical measurements may be utilized m a diagnostic tool for monitor and or control of plasma electrical properties to maintain tight coutiol of pϊocess parameters during plasma processing.
{Para 2j During plasma processing, RF electrical measurements, e.g. voltage (V ) and'Oϊ current (1). may be collected by a probe, c g., TCP Kiyo V "" or TCP Kiyo 45 VI " pϊobe available from Lam Research Corp. of fremont, California, for plasma diagnostic The plasma diagnostic data from the probe maj allow for determination of plasma potential, floating potential, election density, and/or election energv distribution function. However, accurate \ alues for the plasma parameters may be difficult to determine because of the complexities m\ oh ed in calibration and/υr control υf high RF voltage and-'or current probe(s).
I Para 3] In order to calibrate a probe to measure high RF voltage and or current, a high RF and or euπeut test system with a high RF power generate! is needed. A typical commercially available high power RF generator may deliver up to 500 volts at an accuracy of about 10 percent in a 50 Ohms system However, the RF voltages being measured diuing plasma processing may exceed 6,000 volts peak with a minimum accuracy requirement of abυυt 1 5 percent Uaceable back to a National Institute of Standards and Technology (KlSTl standard. Thus, commercially available high powei RF generators may not have the high RF power or the accuracy requirements for data collection employed by a probe for plasma diagnostic.
{Para 4] Referring to tig, 1, a simplified schematic of a prior art RF delivery path 100 for the voltage test aπangeraent is shown The RF powet is supplied by a single air cooled 300 Watt generatoT 102, i e maximum output at 50 Ohms impedance operating at about 13.50 The RF power output from generator 102 is touted by coaxial cables to a coaxial switch network 122 jPara 5j As shown in Fig. 1, coaxial switch network 122 may be configured with a first switch (SW 1 ) 104 ami a second switch (SW2) 106. Λ 20 decibel (db) coaxial attenuator 110 is placed in the RF delivery path to enhance low power functionality by controlling SVVl 104 and S VV2 ! 06, .Attenuator 110 is employed to t educe power output ftom high RF powet generator 102 to pro\ ide stability in the lower voltage test range
I Para 6j For example, in the lower voltage range of about 200 to about 1 ,000 volts peak, SWl 104 and SW2 106 may be switched to select attenuate! HO ϊjor the higher voltage πvfige υf about 2,000 to beyond 6,000
Figure imgf000003_0001
peak, SWl 104 and SW2 I Oo may be switched to the high Ri- delivery path 108. In eitheT case
Figure imgf000003_0002
the attenuator is switched in oi switched out, the power is routed to a V-load network 1 12.
I Para 7] In the example of Fig 1 , a position indicator i ! 8 is coupled to SWl 104 and SW 2 Ϊ06, Position indicator ϊ 18 serves to monitor whether attenuator ϊ 10 has beers selected to pre\ eπt hot switching As the term is employed herein, hot switching refers to switching when there is output power coming out from the generator Hot switching is not desirable during high RF power operations
I Para Sj The signals coming from position indicator 1 18 are touted through control punted cπcuit boaid I PCB) ! 14 lhe signal conditions are iead back
Figure imgf000003_0003
a data acquisition (D AQ) inputs outputs (R)) 120 into a computer i 16. Then the softw are algorithm in computer 116 interprets the signal conditions to determine whether to proceed or halt the test depending on \\ hetfaer the switches are selected correctly.
I Para 9j In general, commercially available high power RF generator 102 operates at about 50 Ohms with. 3(K) watts of power. When operating a 50 Ohms system, enormous amounts of power, is needed to attain the desired high RF voltages, e g 10 kilowatts foi 1000 peak, to 360 kilowatts for 6,000
Figure imgf000003_0004
peak In order foi standard off-the-shelf RF generators to work, the RF generator may be integrated into a high impedance circuit to generate the highe?
Figure imgf000003_0005
necessary for calibration of the piobes. V~!oad network 1 Ϊ 2 is an example of a high Impedance circuit that is tuned to deiher the required
Figure imgf000003_0006
range
{Para 10] FIg 2 shoves a simplified schematic of a prior art \oitage ioad network arrangement 200 In the example of Hg. 2. RF power is supplied by a 50 Ohms Rh generator 202. The RF power signal is passed through a high impedance matched V-load network eiiciut 212 to generate high voltages necessary for plasma applications.
I Para 11 j V-load netw orL circuit 2 ! 2 is configui ed with a first \ aiiable capacitor {( ' 1 ) 204, a second variable capacitor (C2) 206. a third variable capacitor (C3) 208, and an inductor 210. The V-load network 212 is tuned to resonate at about 13.5c> Mil/ In this resonant system, the impedance needs to he matched between generator 202 and an output 216 Othenuse geneτator 202 ma> mil in an unstable condition and possiblv shut dow n With the input impedance from RF geneiator 202 of ^O Ohms output 2 !6 from \'~load network eucuit 212 is tuned to match the impedance of a probe 218 and a \ -ref 214 flie V- ref output signal 214 is sent to an Rh \ ohmeter ( RF \ VD 215 Hence, in a matched netw oi k, the high impedance allows \etv high voltages to be sustained at output node 216 However, in order to cahbiate piobe 2 ! H the high \ oltage output needs to
Figure imgf000004_0001
bettei accmacs than the capability of off-the-shelf meat>piement$ Foi example, plasma
Figure imgf000004_0002
lequne the measurement
Figure imgf000004_0003
being measuied
{Para 12] Refeuing to Hg 3, a simplified schematic of a pπoi ait RF
Figure imgf000004_0004
conitol anarsgernent 300 is show n In the example of Fig 3, a soϊtv. aie algorithm in a computer 316 ma Y send a command to a data acquisition boaid (DAQ) 320 to output an analog signal to a soft* aie-de fined set point 324 to a high powei RF generatot 302 Hence, set point 324 ma> instruct genciatoi ^02 how much powei to output
I Para 13] The povvci signal output ftom generatoi ^02 is routed thiough a switched network >22 to a λ'-load nemoik 312 From λ'-load netwoik 312, the signal, V-ref output 314, is measured The V-ief-output signal 314 is sent to an RF \ oltmetei (RF\ M) > 11^ The signal fiora RFV M 315 is sent as data to a general-purpose interface bus (GPlB) 318 and is read b\ computer 316 f Para 14] In afoiememioued closed-loop RI
Figure imgf000004_0005
control aπangeoient, data from GPIB 318 is compaied with sotHaιe-de fined set point 324 Foi example, if a \ oltage at the V~load network ? 12 of 200 volts peak is desired, a software-defined set point 324 of 200 \ olts peak ma> be set in a closed-loop control, foi example, the \ o Stage \ alue fiom the data coming back over GPlB 318 πiav be compared to geneiate the contiol Mgnal, DAQ ^20. going back to RF geneτator 302 ϊ lie process may be iteτated through a conttol loop algomhm to achie\e a \ -ιof oiupiu withm the desned accuiacv, e g , i 5 peicem, of softwaie- defined set point 324
{Para 15| Unfoitunatelv, tlie aforementioned puoi atts suffei fτoι« a few deficiencies in the case of commercial!)* available RT geneiatoi. the
Figure imgf000004_0006
are in the ranges of up to about *>00 \ olts peak. The ^00 \ olts peak range is not high enough foi the plasma applications In addition, the \ oltage measurement accuracy of about S O percent from commercially available RF generators mas be inadequate In the case where commeicially
Figure imgf000004_0007
RF geneiator has been integrated into a V-load network, the voltage range and accuracy are within acceptable limits for plasma application. However, the high RF voltage test system does not RF current measurement capabilities. Therefore, only voltage probe may be calibrated by the prior art high RF voltage test system.
SUMMARY OF INVENTION
{Para 16] The invention relates, in an embodiment, to a diagnostic tool for performing electrical measurements to calibrate a plasma processing chamber probe. The diagnostic tool includes an RF generator. The diagnostic tool also includes a first impedance circuit. The first impedance circuit is a voltage-load network, configured to deliver RF
Figure imgf000005_0001
outputs from the RF generator for voltage measurements when RF power fioni the RF generator h delhered to the first impedance circuit, wherein the RF \ oltage outputs are in the range of about 200 \ ohs peak to about 6, 100 \ olts peak. The diagnostic tool further includes a second impedance circuit. The second impedance circuit is a current-load netw ork. configured to deli\ er RF current outputs from the RF generator for current measurements when the RF power from the RF generator is delivered to the second impedance circuit, wherein the RF current outputs are in the range of about 2 amperes to about 50 amperes. The diagnostic tool yet further includes a coaxial switch network arrangement configured to provide switchahle RF delivery paths to deliver the Rf power from the RF generator to one of the first impedance circuit and the second impedance circuit.
I Para 17] The above summary relates to only one of the many embodiments of the im ention disclosed herein and is not intended to limit the scope of the invention, which is set forth in the claims herein These and other features of the present invention will be described in more detail below in the detailed description of the [mention, and in conjunction with the following figures.
BRIEF DESCRIPTION OF THE DRAWINGS
{Para J8] The present invention is illustrated by way of example, and not by way of limitation, in the figures of the accompanying drawings and in which like reference numerals refer to similar elements and in which: f Para 19[ FlG. i illustrates a simplified schematic of a prior art RF delivery path for the voltage test arrangement. {Para 2Oj FIG 2 illustrates a simplified schematic of a piior art voltage load network arrangement
{Para 21] FIG 3 illustrates a simplified schematic of a prior ait RF
Figure imgf000006_0001
control airangement
{Para 22] FIG. 4 illustrates in accordance with an embodiment of the present invention, a simplified schematic of an RF dcihery path foi the
Figure imgf000006_0002
(Vl) test arrangement
{Para 23] FIG. 5 illustrates in accordance w ith an embodiment of the inxention. shows a simplified schematic of a current load network arrangement.
I Para 24j FIG. 6 illustrates in accordance w ith an embodiment of the inxention. shows a simplified schematic of an Rt- \oltage-control sijmai-flow ariangement.
{Para 251 FlG 7 illustrates in accordance with an embodiment of the invention, a flow diagram of a eomiol loop algorithm in block diagram foini for sustaining stable RF voltages
{Para 26] FKi S illustrates in accoi dance with art embodiment of the invention, a simplified schematic of a system interlock for a voltage-current (Vl) test fixture.
{Para 27] FIG 0 illustrates in accordance w ith an embodiment of the
Figure imgf000006_0003
simplified schematic of a probe signal routing arrangement
DE TAILED DHSCKIP fIOK OK KMBODIMKNTS
{Para 28] The present imention will now be described in detail with reference to a few embodiments thereof as illustrated in the accompanying drawings in the following description, numerous specific details arc set forth in order to provide a thorough understanding of the present imention. It will be apparent.
Figure imgf000006_0004
to one skilled in the art, that the present m\ention may be piacticed without some or all of these specific details. In othei instances, well known process steps and or structures have not been described in detail in order to not unnecessarily obscure the present invention
{Para 29] Various embodiments are described herein below, including methods and techniques, ϊt should be kept in mmd that the invention might also cover articles of manufacture that includes a computer readable medium on which computer-readable instructions for can) ing out embodiments of the inventive technique are stored The computer readable medium may include, for example, semiconductor, magnetic, opto- iπagnetic. optical, oi other forms of computer readable medium foi storing computer readable code Further, the im ention may also apparatuses for practicing embodiments of the ention Such apparatus may include circuits, dedicated and/or programmable, to cam- out tasLs pertaining to embodiments of the ιn\ ention Examples of such apparatus include a general-purpose computer and or a dedicated computing de\ ice when appropriately programmed and may include a combination of a computer computing de\ ice and dedicated programmable circuits adapted for the v arious tasks pertaining to embodiments of the iiix ention.
{Para 3Oj in accordance with embodiments of the
Figure imgf000007_0001
ention, there ate provided methods and arrangements for a diagnostic tool to perform electrical measurements of high potential RF \ oltages and currents to calibrate probes for plasma applications Fmbodiments of the im ention include integrating a commercially
Figure imgf000007_0002
RF generator with a high impedance circuit to produce high peak
Figure imgf000007_0003
which may be used to calibrate \oitage and or current probes RF electrical measuiements attained from the calibrated probes may be utilized for monitoϊ and/or control of plasma electrical ptoperties to maintain tight control of process parameters during plasma processing
{Para 31 J In one or more embodiments of the indention, a diagnostic tool e g., a \ oltage-current test arrangement, may be configured with a coaxial switch network to route high Rt- power output from a commercially ax ailabie 50 Ohms generator to an 1-load or V- load network In an embodiment, coaxial switch network maj be configured with a coaxial attenuator to reduce power output from high Rf power generatoi to
Figure imgf000007_0004
ide stable measurements at lower
Figure imgf000007_0005
in an embodiment, the selection of low or high RF power may be controlled through a set of first υr second switches. In another embodiment, RF power may be selectively routed to either an 1-load network or a V-load network through a third
Figure imgf000007_0006
\\ ith an embodiment of the invention, the signal conditions and s\\ itch positions are sensed and controlled by a softw are algorithm in a computer. Thus, high potential RF may be monitoied and controlled to ensure proper delivery of high power RF signals to the selected network in a safe manner.
{Para 321 In one or more embodiments of the invention, a current-load network is employed to ide a high impedance circuit in a matched network to enable eommeταally a\ ailable generator to deliver high potential RF \ oltages. In an embodiment the current-load network is configured as a tuned resonant system to match with the impedance of the RF generator and output signals Hence in a matched network i~load network w ith high impedance may aliens \ei\ high cuπents to be sustained and deinered tioni a commercially available 50 Ohms RF generator
I Para 33] In an embodiment, an RF \oltage contiol arrangement may be employed to command an Rh generator to output RF powei to match a predetermined software defined set point In an embodiment, a closed-loop softwaie contio! algorithm may be employed to tteiate until the output
Figure imgf000008_0001
from either the Ϊ-Ioad netwoik oi the V- load netwoiL is matched to the software-defined set point with about 1 5 peieent accuracy. Accurate euirein ami or voltage measurements aie critical for the calibration of V-probe and oi Vϊ-probe to enhance process control during plasma processing
{Para 34] In an embodiment, a control PCB interlock iela> may be employed to enable or disable high RF power generator under predetermined conditions such as a w ater leak, exposed V-iøad or t-load Rr
Figure imgf000008_0002
or lack of cooling water supply flowing to 1-load Thus, the P(1B interlock relay may pievem a user from being exposed to high RF voltage if any of the predetermined conditions are met.
{Para 35] In an embodiment, a control PCB probe signal routing may be employed to allow the signals to be routed through either an 1-load or V -load to measure the cnrrent or \ oitage \ alues from the two different probes. f Para 36] The fcatuτet> and
Figure imgf000008_0003
antages of the imention ma> be better understood with refeience to the figures and discussions that follow Fig. 4 shows, in accoτdaτκe with an embodiment of the present imention, a simplified schematic of an RF delhery path for the
Figure imgf000008_0004
(Vl) test airangemeru 4(X)
{Para 37] The RF power is supplied by a single air-cooled 600 Watt generator 402, i.e. maximum output at 50 Ohms impedance, operating at about ! * 56 MH/. The RF power output from generator 402 may be routed by coaxial cables to a coaxial sw itch network 422
{Para 38| In the implementation of Fig, 4, coaxial sw itch network 422 may be configured with a first switch (SWI ) 404 a second sw tteh (S\¥2> 406 and a thήd switch (S\¥3> 407 A 20 decibel (UB) coaxial attenuatoi 410 is placed in the RS< delήery path to enhance low powei functionality b> controlling SWi and-'or SW 2 Attenuator 4iO may be employed to reduce power output from high RF power generatoi 402 to
Figure imgf000008_0005
stability in the lower voltage test points
{Para 39] For example, in the lower \ oitage range of about 200 to 1 ,000 \ olts peak, SWl 404 and/or SW2 406 may be switched to select attenuator 410 For the higher voltage range of about 2 000 to beyond 6 000 peak SWi 404 and or SW2 406 mas be
Figure imgf000009_0001
itched to the high RF delix cry path 408 In either case whether the attenuator is s\\ itched in or switched out. the power is routed to SW3 40? in an embodiment Third switch (SW3) 407 may be employed to allow for routing the power to either a V-ioad network 412 or an t-load netwoιk.424 m accordance with an embodiment of the invention
{Para 40] In the implementation of Hg. 4, a position indicator 4! 8 may be coupled to SWl 404, SW2 406 .md-'ot SW3 407 Position indicator 4! 8 serves to monitor whether attenuator 410 has been selected to
Figure imgf000009_0002
hot switching and oi whether V-lnad network 412 or I-load
Figure imgf000009_0003
$\\ itching is not desirable
{ Para 41 j The signals coming from position indicators 418 may be routed through control PCB 414 The signal conditions are read back
Figure imgf000009_0004
a data acquisition (DΛQ) input/output (I/O) 420 into a computer 4 \ t> Then the software algorithm in computer 416 interprets the signal conditions to determine whether to proceed or halt the test depending on whethei the switches aie selected correctly
{Para 42 j The aforementioned V -load network 4 ! 2 is configured in a matched network with a high impedance circuit to enable commercially a\ ailable KJr generator 402 to deliver high Rij \ oltage outputs In contrast to prior art Rl delhery path, in the implementation of Fig 4, is configured v\ ith l-load nerw ork 424 in addition to V -load network 4 ! 2 and the appiopriate s\\ itch, SW3 40? The ϊ-load network 424 may be employed to mciease the capability of the diagnostic tool by enabling current (!) measurements in high RF power applications
{Para 43J Fig. 5. in accordance with an embodiment of the invention, shows a simplified schematic of a current load network arrangement 500. In the example of Fig 5, RF pυwei is supplied by a 50 Ohms RF generator 502 An RF power signal may be passed through a high impedance matched I-load network circuit 522 to generate high currents, for example from about 2 amperes to about 50 amperes, necessary for plasma applications, eg , ptobe calibration.
{Para 44| l-load network circuit 522 may be configured \\ ith a first \ ariable capacitor (Cl ) 504, a second variable capacitor (C2) 506, a third \ at tabic capacitor (C3) 508, a first inductor (Ll) 510, and a second inductor (L2) 512. l-load network 522 may be tuned to resonate at about 13 56 MHz In aforementioned resonant sy stem, the impedance may need to be matched between generator 502 and output 516 otherwise generator 502 may run in an unstable condition and possibly shut down With flic input impedance from RF generator 502 of 50 Ohms, an output 516 from I-load network circuit 522 may be tuned to match a pτobe 5 ! S. C3 508 and V-ref 5 ! 4 impedance. The V-ref 5 ! 4 output signal is sent to an RF
Figure imgf000010_0001
{Para 45] Since the V-ref 514, probe 5! 8, and (3 508 are the defined load, the impedance {7} of the defined load may be determined by measuring the
Figure imgf000010_0002
at C 3 508 Knowing the impedance, the current may be calculated foi a given voltage set point through the current path from output 516 through probe 518 to V-ref 514 The current may be calculated through the simple ielationship of the \ oltage fioin Y-ref 514 di\ lάeά by the impedance (Z),
{Para 46] The impedance of the defined ioad may be matched by adjusting \ ariable capacitois CJ (504) and C2 (506) of i-load neiwoik 522 fhe tuned network may be matched to resonate \\ ith RF generator 502 impedance at 50 Ohms. Hence, when resonated, a matched netwoik allows "very high cuπcnLs. e g , from about 2 amperes to about 50 ampcies. to be sustained at output node 516 for plasma applications, e g., current (1} probe calibration
{Para 47] Fig 6, in accordance w ith an embodiment of the in\ eπtion. shows a simplified schematic of an R> voltage-control signal-flow arrangement 5(X) In the implementation of Fig 6, a software algorithm in a computer 616 may send a command to a data acquisition boaid (DAQ) 620 to output an analog .signal to drhe a set poun 626 to a high powei RF generator 602. Set point 626 tells generator ft02 how much power to output.
{Para 48] In an embodiment, the power signal output from generator 602 may be routed through a switched network 622 to either a Y- load network 612 or an I-load netwoik 624 depending on the desired application Consider the situation wherein, for example, the pow cr signal may be routed to Y- load network 612 From λ'-load netw υrk 612, the signal, V-ref output 614, is measured. The Y-ref output signal 614 may be sent to an RFYM J 615. The signal from RFYM l 615 may be sent as data to a general -purpose interface bus !GPIB) 618 and may be read b> computer 616
{Para 49| In another example, the power signal may be routed to I -load network 624 in accordance with an embodiment of the intention From I-load network 624, the signal, V-ief output 614. is measured, fhe Y-ref output signal 614 may be sent to an RFYM2 617. fhe signal from RFYM2 617 may be sent as data to GPIB 618 and may be read by computer 616. {Para 5Oj In the closed-loop Rlj \ oltage control arrangement data from GPlB (ή H may be compared with software-defined set point 626. For example, if a voltage at the V- load network 6! 2 of 200 \ olts peak is desired, a software-defined set point 624 of 2(X)
Figure imgf000011_0001
peak may be set "through the closed-ioop control, the \ oltage \ alυe from the data coining back o\ er CiPIB 018 may be compared to generate the control signal OAQ 620, going back to R> generator 602. Hie process may be iterated through a control loop algorithm to achieve a V- ref output 614 within the desired accuracy, e g.. i 5 percent, of software-defined set point 624. Analogously, the closed-loop control may be iterated for I-load network 624 to
Figure imgf000011_0002
a V-ref output 614 u ithm the desired accuracy . e.g , 1 5 percent of software-defined set point 624 in accordance with an embodiment of the indention In an embodiment, the aforementioned method establishes an accurate, single paiametei. i c, voltage, closed-loop coutioi.
I Para 51 j Fig, 7 shows, in accordance with an embodiment of the imention, a flow diajπam of a control loop algorithm 700 in block diagram form for sustaining stable RF In the implementation of Fig 7, an initial set point 702 is sent to an RF generator 704 and a set point buffer 708 Set point 708 may be a memory or registei location in a computei {not shown I.
{Para 52 [ Upon acquiring V-ref measurement 7Oo from the \ oltage load, the softw are defined RF set point 710 may be subtracted from V-ref measurement 706 m step C 12} in accordance with an embodiment. In the next step (714), the result from step (712) may be multiplied by a gain faetoi 716. Then in step (718), the iesult from step 714 may be subtracted from set point loaded into butVei 708 The iesult from step (718) may be sent to set point buffer 70S and RF generator 704
{Para 53) The process may be iterated in a ciυsed-loop control until the desired set point is reached, i.e ,
Figure imgf000011_0003
defined RF set point 710 Control loop algorithm "700 is able to preside accurate voltage control w ithin i 5 percent traceable back ω NlST standards. Since RF current \ allies may be calculated fiom known impedance and accurate \ oltage \ allies, RF current \ alues røav also be controlled to about 1.5 percent traceable back to MST standards in accordance \\ ith an embodiment
{Para 54] Fig 8 shows, in accoi dance \\ ith an embodiment of the imention, a simplified schematic of a system interlock 800 for a voltage-current (V l) test fixture Sn the implementation of Fig 8, control PCB 802 may be configured with a first set of connectors 804, second set of connectots 806, an inteϊlock relay 807, a ϊlτst interlock telay switch 808, a second interlock relay switch SiO, a voltage clamp circuit 8 l2, a darlmgton circuit 8 ! i . a 24 volt external power supply 814. and an output from the persona! computer (PO data acquisition card (DΛQ) 816 in an embodiment Control PCB 802 is configured to
Figure imgf000012_0001
ide a method of enabling and or disabling high RF power genera toτ 822 under predetermined conditions for safe operations in accordance with an embodiment of the invention.
I Para 55] As the term is employed herein, safe operations are conditions in which it is safe for the equipment to operate ami or safe foi the operator to operate the equipment In the Implementation of FIg, 8, both high Rt power operations and/or water-cooling may be employed in an embodiment, Fo ensure opeiators aie not exposed to high RF power, a V- ioad interlock switch 818 and, or art I-ioad interlock switch 820 may be employed Both V- ioad interlock switch 818 and, or I -load interlock switch 820 may be located under the hardware fPara 56| In addition to the hardw are interlocks, a w ater cooling supply 824 may be employed to cool a high RF powered I- load system 830 by opening a water
Figure imgf000012_0002
826 and actuating a flow switch 828. Since I-løad system 830 may be water cooled, a system for detection of v. ater leaks and water flow raaj be employed The power from RF generator 822 may be disabled unless predetermined conditions for the safety interlock system are satisfied In the implementation of Fig. 8, the predetermined conditions may require the hardware intei locks to be engaged, there are no leaks detected, arsd water-cooling is enabled foi control PCB 802 to allow high RF power from generator 822 to be activated,
I Para 57 j Consider the situation wherein, for example, the water level switches, e g., a first water level switch 834 and a second water le\el switch 836, aie part of the signal enable path to the interlock relay for leak detection A signal, which may be denved from PC DΛQ 816, may be sent out from control PCB 802 The enable signal may be routed tluough dariington circuit 81 1 , -which is a relay driver, and connector 8Ot" to first water le\ el switch 834 and second water !e\el switch 836 back to PCB interlock relay 802 tluough connectot 806 If the two w ater
Figure imgf000012_0003
switches 834 and 836 are closed, the signal may be enabled bv clamp cneuit 812 to allow for control of the switches 80S and 810 within inteϊlock relay 807. jPara 58] Upon enabling interlock relay 807, 24 volts power may be routed through closed switch 810 and connectoi SOo tυ water val\ e S2o Then watei val\ e 820 is opened to allow cooling water supply 824 to flow closing flow switch 82S When wateϊ
Figure imgf000013_0001
826 is opened, cooling water supply 824 rna> flow through to provide water-cooling to 1-load s\ stem 830
{Para 59 j When flow switch circuit 828 Ls closed, RF generator 822 may send high Rl power to the s> stem if the I-load interlock 820 and V-iυad interlock 818 are both closed Hence, control PCB 802 only allows high Rl powet flow if a!! the predetermined conditions, i.e.. no watei leaks, water valve is opened, flow switch is closed, and hardware interlocks aie closed, are met Thus, a user may be protected from being exposed to hazards associated w ith operating high RF pow er equipment,
{Para 6Oj Fig 9 show s, in accordance with an embodiment of the invention, a simplified schematic of a probe signal routing arrangement 900. In the implementation of Fig. 9, a control PCB 902 is configured with a first connector ^04, a second connector ^06, a third coMiectoi 908, a piobe contact detectoi 9K), a first smgle-pole double-throw (SPDT) relay 912. a second SPDT relay 916, a first voltage clamp circuit 914, a second voltage clamp circuit 91 S, a UI !T jseiect 919, a computer input/output ( !/< )} 920, and a 24 volts pow ei supply 922.
{Para 61] Consider the situation wherein, for example, calibration of a probe is needed to be pet formed In the prior art, the
Figure imgf000013_0002
test arrangement has only a V~load network Hence, a V-probe may only be calibrated for \oltages. In contrast, the voltage-current test arrangement of the invention ts configured with both a V-load network 924 and an ϊ-load network 928 in accordance with an embodiment of the imentton. Voltage-current test arrangement may be employed to calibrate Vl-probe for both voltages and or currents Hence, the signal from Vl-probe 926 and/or V oi V! probe 930 needs to be routed to the appropriate channel via contioi PCB 902 m accordance with an embodiment.
{Para 62] For example, a user may want to measure a
Figure imgf000013_0003
signal lϊoπi V-load 928 Jbi cither a V-prøbc 928 or a Vl-probe 930 Either probe, i.e , V~prøbe or Vl-probe, may be measured since both probes
Figure imgf000013_0004
voltage measurement capability. As shown in the implementation of ϊ-ig. 9,
Figure imgf000013_0005
^ 16, and or a coaxial switch SW3 938 are in the default positions foi V-load measurement 92S. In geneial, SPDT relay allows for processing of multiple signals other relay, e g , double-pole double-throw (DPDT) may also be employed {Para 63 j In an example, a UUTjseiect enable signal 919, which may be derived from computer I/O 920, may be roofed to first SPDT relay 912 with first voltage clamp circuit 9 !4 and second SPDT relay 916 with second voltage clamp circuit 918. In the implementation of Fig, 9, SPDT relays 9! 2 and 916 are in the default positions for V -load measurement Voltage clamp circuits 914 and 918 are configured to protect darlington driver 921 from high voitage spike damages. The high voltage spike may be directed to the -*-5V power supply derived from computer LO 920 to prevent spike damages. In addition, contact detector 910 may be configured in the V -load signal path to sense over-voltage contact position in either the V-ρrobe or VI-probe.
{Para 64] In general, V-probe and/or VI-probe are two probes being tested and calibrated for plasma applications. Each probe may have uniquely discreet signals being tested. For example, Vpk Pos is a peak positive voltage available on both V-probe and/or Vi-probe. However, VpkJNeg is a peak negative voltage only available on V-probe. The V- probe has two voltage detection outputs. One output is employed to detect the positive form of the waveform and the other output is employed to detect the negative form of the waveform. Similarly, lpk Pos is a positive current peak only available on VI-probe.
I Para 65J Referring to Fig. 9, the UUT select enable signal 919 is also responsible for routing -KM V power 922 from control PCB 902 through first connector 906 to V or Vl probe 930 in an embodiment. Similarly, +24 V power 922 is routed from control PCB 902 through second connector 908 to third switch (S W3 ) 938. Coaxial switch SW3 938, in the default position, is configured Io route RF power from a coaxial switch SW2 940 to V-load network 928. RF buffered outputs from V or VJ probe 930 is routed to RFVM 936.
{Para 661 Hence, in order to measure and/or calibrate RF voltages on V-probe or VI- probe 930. signals and ' 24 V power are routed through control PCB 902 relays 912 and 916. The relays 912 and 916 and coaxial switch SW3 938 are in the default position to route the signals and RF power to the probe 930. Over-voltage contact actuation is tested on the V- load and is sensed as a +5V pole-up contact detector 910. Digital output signal UUT select 919 from computer I/O 920 determines which probe is to be tested,
I Para 67] Jn another example, digital output signal UUT select 919 also determines the enable to test a VI-probe 926 for the i-load network 924. SPDT relays 912 and 916 switch to the alternate positions to route +24 V DC power 922 over to VI-probe 926 through connector 904. Similarly, the enable signal routes +24 V DC power 922 over to coaxial switch SW3 938 through connector 908 SW3 938 is selected to the alternate position to route RF power from S\V2 940 fo I-load 924 RF buffered outputs from VI probe 926 are routed to R FVM
934
{Para 68| Hence, in order to measure and or calibiate Rlj cm rents on Yl-ptobe 926, signals and = 24 V power ate routed through control PCB 902 relays 912 and 916. The relays 912 and 916 and coaxial switch SW 3 938 aie in the alternate position to route the signals and RF power to Yl-probe 926 The euirein (1 ) reading may be pro\ ided back to control PCB 9(32 through the connector 904, so the signal may be processed through computer I C.) 920
{Para 69 [ Λs may be appreciated from the foregoing, embodiments of the invention pro\ ide methods and arrangements tor measuring RF current in addition to voltage values to calibrate \ oitage and or voltage-current probes In addition, the probes may be calibrated to measure and control \ oitage and current within 1.5 percent traceable to NϊS 1" standards. Hence, high accuracy RF measurements during plasma processing ma> tianslate to better process control, which niay allow the end user to make w afer or electronic components with finei features
{Para 7Oj While this imention has been described in terms of several preferred embodiments, there are alterations, permutations, and equivalents, which fall within the scope of this inv ention Also, the title, summary, and abstract are provided herein for com enience and should not be used to construe the scope of the claims herein It should also be noted that there are many alternat e ways of implementing the methods and appaiaiuses of the pieseut im ention. Although
Figure imgf000015_0001
examples are pro\ ided herein, it is intended that these examples be illustrative and not limiting \\ ith respect to the invention Further, in this application, a set of "n" items refers zero or more items in the set It is therefore intended that the following appended claims be interpreted as including all such alterations, permutations, and equiv alents as fall within the true spiπt and scope of the present invention

Claims

CLAIMS What is claimed is i A diagnostic tool for performing electrical measurements to calibrate a plasma processing chamber piobe. comprising- an RF generator; a first impedance circuit, said first impedance Circuit is a voltage- load network, configured to delher RS< \ oltage outputs from said RF generator for \oltage measurements when RF power from said RF generatoi is deliveied to said first impedance circuit, wherein said RF outputs are in the range of about 200
Figure imgf000016_0001
to about 6.100
Figure imgf000016_0002
a second impedance circuit, said second impedance circuit is a current-load network, configured to deiher RF current outputs from said RF generator for current measurements when said RF power from said RF generator is delh ered to said second impedance circuit wherein said RF current outputs are in the iange of about 2 amperes to about 50 amperes, and a coaxial switch network arrangement configured to provide swϊtchable RF delivery paths to deliver said RF power from said RF generator to one of said fust impedance ciicuit and .said second impedance ciicuit 2. The diagnostic tool of claim 1 further comprising. an RF voltage conttol arrangement, said RF
Figure imgf000016_0003
control airangement configured to command said RF generator to output said RF power to match a predetermined software defined set point; a control PCB probe signal routing anangement. said control PCB probe signal touting airangement configured to allow electrical signals to be routed through one of said fust impedance circuit and said second impedance circuit to measure electrical values from said probe, and a system interlock, said system interlock includes a control PCB interlock relay arrangement configured to prevent said diagnostic tool from delivering said Rh power from said RF generator if at least one of predetermined conditions is met.
3 The diagnostic tool of claim 1 , wherein said RF genera tot is a 50 Ohm generator
4 The diagnostic tool of claim 1 , wherein said
Figure imgf000016_0004
network is tuned to match an impedance of said RF generator
5. The diagnostic tool of claim 1 Λ\ herein said current-load network is tuned to match an impedance of said RF generator,
{> The diagnostic tool of claim 1 , wherein said cuuent-load netwotk is tuned to resonate at about 13.56 MHz
7. The diagnostic tool of claim 1 , wherein said coaxial switch network arrangement includes an attenuator.
8. The diagnostic tool of claim 2, wherein said RF voltage control a rangement includes a data acquisition hoard.
9 The diagnostic tool of claim 2, wherein said RF voltage control arrangement is a closed-loop RF voltage contϊol arrangement.
10. The diagnostic tool of claim 2, wherein said control PCB probe signal routing arrangement includes a plurality of single-pole double-throw relays, i 1 . The diagnostic tool of claim 2, wherein said control PCB probe signal routing arrangement includes a plurality of double-pole double-throw relays.
12. The diagnostic tool of claim 2, wherein said control PCB interlock relay arrangement includes an interlock relay.
S3. The diagnostic tool of claim 2, wherein said control PCB interlock relay arrangement includes a voltage clamp ciicuit and a darlington circuit
14. The diagnostic tool of claim 2. wherein said system interlock includes a
Figure imgf000017_0001
interlock switch and a cuπent-load interlock switch.
15. The diagnostic tool of claim 2, wherein said s\stem interlock includes a pluralit\ of leak detection switches.
16. The diagnostic tool of claim 2, wherein said system interlock includes a flow switch and a water \ ah c
17. A method for performing electrical measurements to calibrate a plasma processing chamber probe, comprising; prov id ing an RF generator that is configured to output a Rh* power signal, providing a first impedance circuit, said first impedance circuit is a voltage-load network being configured to deliver Rh voltage outputs from said RF generator for voltage measurements when Rh power from said RF generator is delivered to said first impedance circuit, wherein said RF voltage outputs, are in the range of about 200 volts- to about 6,100 volts. providing a second impedance circuit, said second impedance circuit is a cuπent-load network that is configured to deliver RF current outputs- from said RF generator for current measurements when said RF power from said Rt generator is delivered to said second impedance circuit, wherein said Ri- current outputs are in the range of about 2 amperes to about 50 amperes; and id ing a coaxial switch netwoik arrangement that is conllguied to implement s\v itc liable RF delivers paths to delύ er said RF power from said RS< generatot to one of said first impedance circuit and said second impedance circuit I S. The method of claim 1 ? fuithei comprising. configuring an RF voltage control arrangement, said RF xoltage control arrangement to command said Rl generator to output said Rl pcm er to match a predetermined software defined set point; configuring a contiol PCS piobe signal routing arrangement, said control PCB probe signal routing arrangement to allow electrical signals to be routed through one of said first impedance circuit and said second impedance circuit to measure electiical values from a probe; and configuring a system interlock, said system interlock includes a control PCB interlock relay arrangement to prevent said method from delivering said RF power from said RF generator if at least one of predetermined conditions is met.
19. The method of claim 17, wherein ^aid RF genera toi is a 50 Ohm generator
20. The method of claim 17. w herein .said
Figure imgf000018_0001
rsetw oi k is tuned to match an impedance of said RF generator
2! The method of claim I?, wherein said current-load network Ls tuned to match an impedance of said RF geneiatoi
22. The method of claim 17 whetein said current-load netwcnk is tuned to resonate at about Li 56 VlIl/
23. fhe method of claim 1 ?, wherein said coaxial switch network arrangement includes an attenuator.
24. The method of claim I S5 wheiein said Rij x ohage control amnmement includes a data acquisition board.
25. fhe method of claim 18, wherein said RF \o!tage control arrangement is a closed-loop RF \ oltage control arrangement
26. The method of claim 1 S, wherein ^aid contiol PCB piobe Mgnal routing arrangement includes a plutaliry of single-pole double-throw relays
27. The method of claim 18, wheiein said control PCB probe signal routing airangement includes a plurality of double-pole double-throw relays.
28. The method of claim 18, wherein said control PCB interlock relay arrangement includes an intetlock teiay
29. The method of claim 1 S, wherein ^aid control PCB interlock relay arrangement includes a voltage clamp circuit and a darUngton circuit.
30. The method of claim i 8. wherein said system interlock includes a voltage-load interlock switch and a current-load interlock switch.
3 i . The method of claim 18, wherein said system interlock includes a plurality of leak detection switches.
32. The method of claim 18.. wherein said system interlock includes a flow switch and a \\ ater valve.
PCT/US2008/068156 2007-06-28 2008-06-25 Method and apparatus for a voltage/current probe test arrangements Ceased WO2009006152A2 (en)

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