WO2009006152A2 - Method and apparatus for a voltage/current probe test arrangements - Google Patents
Method and apparatus for a voltage/current probe test arrangements Download PDFInfo
- Publication number
- WO2009006152A2 WO2009006152A2 PCT/US2008/068156 US2008068156W WO2009006152A2 WO 2009006152 A2 WO2009006152 A2 WO 2009006152A2 US 2008068156 W US2008068156 W US 2008068156W WO 2009006152 A2 WO2009006152 A2 WO 2009006152A2
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- WO
- WIPO (PCT)
- Prior art keywords
- generator
- voltage
- impedance circuit
- diagnostic tool
- arrangement
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R35/00—Testing or calibrating of apparatus covered by the other groups of this subclass
- G01R35/005—Calibrating; Standards or reference devices, e.g. voltage or resistance standards, "golden" references
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/0046—Arrangements for measuring currents or voltages or for indicating presence or sign thereof characterised by a specific application or detail not covered by any other subgroup of G01R19/00
- G01R19/0061—Measuring currents of particle-beams, currents from electron multipliers, photocurrents, ion currents; Measuring in plasmas
Definitions
- Radio frequency (RFl elecUical measurements may be utilized m a diagnostic tool for monitor and or control of plasma electrical properties to maintain tight coutiol of p ⁇ ocess parameters during plasma processing.
- RF electrical measurements e.g. voltage (V ) and ' O ⁇ current (1).
- V voltage
- ' O ⁇ current (1) may be collected by a probe, c g., TCP Kiyo V " " or TCP Kiyo 45 VI " p ⁇ obe available from Lam Research Corp. of fremont, California, for plasma diagnostic
- the plasma diagnostic data from the probe maj allow for determination of plasma potential, floating potential, election density, and/or election energv distribution function.
- accurate ⁇ alues for the plasma parameters may be difficult to determine because of the complexities m ⁇ oh ed in calibration and/ ⁇ r control ⁇ f high RF voltage and-'or current probe(s).
- a high RF and or eu ⁇ eut test system with a high RF power generate! is needed.
- a typical commercially available high power RF generator may deliver up to 500 volts at an accuracy of about 10 percent in a 50 Ohms system
- the RF voltages being measured diuing plasma processing may exceed 6,000 volts peak with a minimum accuracy requirement of ab ⁇ t 1 5 percent Uaceable back to a National Institute of Standards and Technology (KlSTl standard.
- KlSTl standard National Institute of Standards and Technology
- ⁇ Para 4 Referring to tig, 1, a simplified schematic of a prior art RF delivery path 100 for the voltage test a ⁇ angeraent is shown
- the RF powet is supplied by a single air cooled 300 Watt generatoT 102, i e maximum output at 50 Ohms impedance operating at about 13.50
- the RF power output from generator 102 is claimed by coaxial cables to a coaxial switch network 122 jPara 5j
- coaxial switch network 122 may be configured with a first switch (SW 1 ) 104 ami a second switch (SW2) 106.
- ⁇ 20 decibel (db) coaxial attenuator 110 is placed in the RF delivery path to enhance low power functionality by controlling SVVl 104 and S VV2 ! 06, .Attenuator 110 is employed to t educe power output ftom high RF powet generator 102 to pro ⁇ ide stability in the lower voltage test range
- SWl 104 and SW2 106 may be switched to select attenuate! HO ⁇ j or the higher voltage ⁇ vfige ⁇ f about 2,000 to beyond 6,000 peak, SWl 104 and SW2 I Oo may be switched to the high Ri- delivery path 108.
- the attenuator is switched in oi switched out, the power is routed to a V-load network 1 12.
- a position indicator i ! 8 is coupled to SWl 104 and SW 2 ⁇ 06, Position indicator ⁇ 18 serves to monitor whether attenuator ⁇ 10 has beers selected to pre ⁇ e ⁇ t hot switching
- hot switching refers to switching when there is output power coming out from the generator Hot switching is not desirable during high RF power operations
- I Para 9j In general, commercially available high power RF generator 102 operates at about 50 Ohms with. 3(K) watts of power. When operating a 50 Ohms system, enormous amounts of power, is needed to attain the desired high RF voltages, e g 10 kilowatts foi 1000 peak, to 360 kilowatts for 6,000 peak In order foi standard off-the-shelf RF generators to work, the RF generator may be integrated into a high impedance circuit to generate the highe? necessary for calibration of the piobes. V ⁇ !oad network 1 ⁇ 2 is an example of a high Impedance circuit that is tuned to deiher the required range
- FIg 2 shoves a simplified schematic of a prior art ⁇ oitage ioad network arrangement 200 In the example of Hg. 2.
- RF power is supplied by a 50 Ohms Rh generator 202.
- the RF power signal is passed through a high impedance matched V-load network eiiciut 212 to generate high voltages necessary for plasma applications.
- I Para 11 j V-load netw orL circuit 2 ! 2 is configui ed with a first ⁇ aiiable capacitor ⁇ ( ' 1 ) 204, a second variable capacitor (C2) 206. a third variable capacitor (C3) 208, and an inductor 210.
- the V-load network 212 is tuned to resonate at about 13.5c> Mil/ In this resonant system, the impedance needs to he matched between generator 202 and an output 216 Othenuse gene ⁇ ator 202 ma> mil in an unstable condition and possiblv shut dow n
- the input impedance from RF geneiator 202 of ⁇ O Ohms output 2 !6 from ⁇ ' ⁇ load network eucuit 212 is tuned to match the impedance of a probe 218 and a ⁇ -ref 214 flie V- ref output signal 214 is sent to an Rh ⁇ ohmeter ( RF ⁇ VD 215 Hence, in a matched netw oi k, the high impedance allows ⁇ etv high voltages to be sustained at output node 216 However, in order to cahbiate piobe 2 ! H the high ⁇ oltage output needs to bettei accmacs than the capability of off-the-s
- the povvci signal output ftom generatoi ⁇ 02 is routed thiough a switched network >22 to a ⁇ ' -load nemoik 312 From ⁇ ' -load netwoik 312, the signal, V-ref output 314, is measured
- the V-ief-output signal 314 is sent to an RF ⁇ oltmetei (RF ⁇ M) > 1 1 ⁇
- the signal fiora RFV M 315 is sent as data to a general-purpose interface bus (GPlB) 318 and is read b ⁇ computer 316 f Para 14]
- afoiememioued closed-loop RI control a ⁇ angeoient data from GPIB 318 is compaied with sotHa ⁇ e-de fined set point 324 Foi example, if a ⁇ oltage at the V ⁇ load network ?
- a software-defined set point 324 of 200 ⁇ olts peak ma> be set in a closed-loop control, foi example, the ⁇ o Stage ⁇ alue fiom the data coming back over GPlB 318 ⁇ iav be compared to geneiate the contiol Mgnal, DAQ ⁇ 20.
- going back to RF gene ⁇ ator 302 ⁇ lie process may be ite ⁇ ated through a conttol loop algomhm to achie ⁇ e a ⁇ - ⁇ of oiupiu withm the desned accuiacv, e g , i 5 peicem, of softwaie- defined set point 324
- the invention relates, in an embodiment, to a diagnostic tool for performing electrical measurements to calibrate a plasma processing chamber probe.
- the diagnostic tool includes an RF generator.
- the diagnostic tool also includes a first impedance circuit.
- the first impedance circuit is a voltage-load network, configured to deliver RF outputs from the RF generator for voltage measurements when RF power fioni the RF generator h delhered to the first impedance circuit, wherein the RF ⁇ oltage outputs are in the range of about 200 ⁇ ohs peak to about 6, 100 ⁇ olts peak.
- the diagnostic tool further includes a second impedance circuit.
- the second impedance circuit is a current-load netw ork.
- the diagnostic tool yet further includes a coaxial switch network arrangement configured to provide switchahle RF delivery paths to deliver the Rf power from the RF generator to one of the first impedance circuit and the second impedance circuit.
- FIG. 1 illustrates a simplified schematic of a prior art RF delivery path for the voltage test arrangement.
- FIG 2 illustrates a simplified schematic of a piior art voltage load network arrangement
- FIG 3 illustrates a simplified schematic of a prior ait RF control airangement
- FIG. 4 illustrates in accordance with an embodiment of the present invention, a simplified schematic of an RF dcihery path foi the (Vl) test arrangement
- FIG. 5 illustrates in accordance w ith an embodiment of the inxention. shows a simplified schematic of a current load network arrangement.
- FIG. 6 illustrates in accordance w ith an embodiment of the inxention. shows a simplified schematic of an Rt- ⁇ oltage-control sijmai-flow ariangement.
- ⁇ Para 251 FlG 7 illustrates in accordance with an embodiment of the invention, a flow diagram of a eomiol loop algorithm in block diagram foini for sustaining stable RF voltages
- FKi S illustrates in accoi dance with art embodiment of the invention, a simplified schematic of a system interlock for a voltage-current (Vl) test fixture.
- FIG 0 illustrates in accordance w ith an embodiment of the simplified schematic of a probe signal routing arrangement
- ⁇ Para 29 Various embodiments are described herein below, including methods and techniques, ⁇ t should be kept in mmd that the invention might also cover articles of manufacture that includes a computer readable medium on which computer-readable instructions for can) ing out embodiments of the inventive technique are stored
- the computer readable medium may include, for example, semiconductor, magnetic, opto- i ⁇ agnetic.
- the im ention may also apparatuses for practicing embodiments of the ention
- Such apparatus may include circuits, dedicated and/or programmable, to cam- out tasLs pertaining to embodiments of the ⁇ n ⁇ ention
- Examples of such apparatus include a general-purpose computer and or a dedicated computing de ⁇ ice when appropriately programmed and may include a combination of a computer computing de ⁇ ice and dedicated programmable circuits adapted for the v arious tasks pertaining to embodiments of the iiix ention.
- ⁇ Para 3Oj in accordance with embodiments of the ention, there ate provided methods and arrangements for a diagnostic tool to perform electrical measurements of high potential RF ⁇ oltages and currents to calibrate probes for plasma applications
- Fmbodiments of the im ention include integrating a commercially RF generator with a high impedance circuit to produce high peak which may be used to calibrate ⁇ oitage and or current probes RF electrical measuiements attained from the calibrated probes may be utilized for monito ⁇ and/or control of plasma electrical ptoperties to maintain tight control of process parameters during plasma processing
- a diagnostic tool e g., a ⁇ oltage-current test arrangement
- a coaxial switch network may be configured with a coaxial switch network to route high Rt- power output from a commercially ax ailabie 50 Ohms generator to an 1-load or V- load network
- coaxial switch network maj be configured with a coaxial attenuator to reduce power output from high Rf power generatoi to ide stable measurements at lower in an embodiment, the selection of low or high RF power may be controlled through a set of first ⁇ r second switches.
- RF power may be selectively routed to either an 1-load network or a V-load network through a third ⁇ ith an embodiment of the invention, the signal conditions and s ⁇ itch positions are sensed and controlled by a softw are algorithm in a computer.
- high potential RF may be monitoied and controlled to ensure proper delivery of high power RF signals to the selected network in a safe manner.
- a current-load network is employed to ide a high impedance circuit in a matched network to enable eomme ⁇ ally a ⁇ ailable generator to deliver high potential RF ⁇ oltages.
- the current-load network is configured as a tuned resonant system to match with the impedance of the RF generator and output signals Hence in a matched network i ⁇ load network w ith high impedance may aliens ⁇ ei ⁇ high cu ⁇ ents to be sustained and definered tioni a commercially available 50 Ohms RF generator
- an RF ⁇ oltage contiol arrangement may be employed to command an Rh generator to output RF powei to match a predetermined software defined set point
- a closed-loop softwaie contio! algorithm may be employed to tteiate until the output from either the ⁇ -Ioad netwoik oi the V- load netwoiL is matched to the software-defined set point with about 1 5 peieent accuracy.
- a control PCB interlock iela> may be employed to enable or disable high RF power generator under predetermined conditions such as a w ater leak, exposed V-i ⁇ ad or t-load Rr or lack of cooling water supply flowing to 1-load
- the P( 1 B interlock relay may pievem a user from being exposed to high RF voltage if any of the predetermined conditions are met.
- a control PCB probe signal routing may be employed to allow the signals to be routed through either an 1-load or V -load to measure the cnrrent or ⁇ oitage ⁇ alues from the two different probes.
- f Para 36 The fcatu ⁇ et> and antages of the imention ma> be better understood with refeience to the figures and discussions that follow Fig. 4 shows, in acco ⁇ da ⁇ e with an embodiment of the present imention, a simplified schematic of an RF delhery path for the (Vl) test airangemeru 4(X)
- the RF power is supplied by a single air-cooled 600 Watt generator 402, i.e. maximum output at 50 Ohms impedance, operating at about ! * 56 MH/.
- the RF power output from generator 402 may be routed by coaxial cables to a coaxial sw itch network 422
- coaxial sw itch network 422 may be configured with a first switch (SWI ) 404 a second sw tteh (S ⁇ 2> 406 and a th ⁇ d switch (S ⁇ 3> 407
- a 20 decibel (UB) coaxial attenuatoi 410 is placed in the RS ⁇ del ⁇ ery path to enhance low powei functionality b> controlling SWi and-'or SW 2 Attenuator 4iO may be employed to reduce power output from high RF power generatoi 402 to stability in the lower voltage test points
- SWl 404 and/or SW2 406 may be switched to select attenuator 410
- SW3 407 may be employed to allow for routing the power to either a V-ioad network 412 or an t-load netwo ⁇ k.424 m accordance with an embodiment of the invention
- a position indicator 4! 8 may be coupled to SWl 404, SW2 406 .md-'ot SW3 407 Position indicator 4! 8 serves to monitor whether attenuator 410 has been selected to hot switching and oi whether V-lnad network 412 or I-load $ ⁇ itching is not desirable
- the signals coming from position indicators 418 may be routed through control PCB 414
- the signal conditions are read back a data acquisition (D ⁇ Q) input/output (I/O) 420 into a computer 4 ⁇ t>
- the software algorithm in computer 416 interprets the signal conditions to determine whether to proceed or halt the test depending on whethei the switches aie selected correctly
- V -load network 4 ! 2 is configured in a matched network with a high impedance circuit to enable commercially a ⁇ ailable KJr generator 402 to deliver high Ri j ⁇ oltage outputs
- a ⁇ ailable KJr generator 402 to deliver high Ri j ⁇ oltage outputs
- v ⁇ ith l-load nerw ork 424 in addition to V -load network 4 ! 2 and the appiopriate s ⁇ itch, SW3 40?
- the ⁇ -load network 424 may be employed to mciease the capability of the diagnostic tool by enabling current (!) measurements in high RF power applications
- ⁇ Para 43J Fig. 5. shows a simplified schematic of a current load network arrangement 500.
- RF p ⁇ wei is supplied by a 50 Ohms RF generator 502
- An RF power signal may be passed through a high impedance matched I-load network circuit 522 to generate high currents, for example from about 2 amperes to about 50 amperes, necessary for plasma applications, eg , ptobe calibration.
- l-load network circuit 522 may be configured ⁇ ith a first ⁇ ariable capacitor (Cl ) 504, a second variable capacitor (C2) 506, a third ⁇ at tabic capacitor (C3) 508, a first inductor (Ll) 510, and a second inductor (L2) 512.
- l-load network 522 may be tuned to resonate at about 13 56 MHz In aforementioned resonant sy stem, the impedance may need to be matched between generator 502 and output 516 otherwise generator 502 may run in an unstable condition and possibly shut down With flic input impedance from RF generator 502 of 50 Ohms, an output 516 from I-load network circuit 522 may be tuned to match a p ⁇ obe 5 ! S. C3 508 and V-ref 5 ! 4 impedance. The V-ref 5 ! 4 output signal is sent to an RF
- the impedance ⁇ 7 ⁇ of the defined load may be determined by measuring the at C 3 508 Knowing the impedance, the current may be calculated foi a given voltage set point through the current path from output 516 through probe 518 to V-ref 514 The current may be calculated through the simple ielationship of the ⁇ oltage fioin Y-ref 514 di ⁇ l ⁇ e ⁇ by the impedance (Z),
- the impedance of the defined ioad may be matched by adjusting ⁇ ariable capacitois CJ (504) and C2 (506) of i-load neiwoik 522 fhe tuned network may be matched to resonate ⁇ ith RF generator 502 impedance at 50 Ohms.
- a matched netwoik allows "very high cu ⁇ cnLs. e g , from about 2 amperes to about 50 ampcies. to be sustained at output node 516 for plasma applications, e g., current (1 ⁇ probe calibration
- a software algorithm in a computer 616 may send a command to a data acquisition boaid (DAQ) 620 to output an analog .signal to drhe a set poun 626 to a high powei RF generator 602.
- DAQ data acquisition boaid
- Set point 626 tells generator ft02 how much power to output.
- the power signal output from generator 602 may be routed through a switched network 622 to either a Y- load network 612 or an I-load netwoik 624 depending on the desired application
- a switched network 622 may be routed to either a Y- load network 612 or an I-load netwoik 624 depending on the desired application
- the pow cr signal may be routed to Y- load network 612 From ⁇ ' -load netw ⁇ rk 612, the signal, V-ref output 614, is measured.
- the Y-ref output signal 614 may be sent to an RFYM J 615.
- the signal from RFYM l 615 may be sent as data to a general -purpose interface bus !GPIB) 618 and may be read b> computer 616
- the power signal may be routed to I -load network 624 in accordance with an embodiment of the intention
- the signal, V-ief output 614. is measured, fhe Y-ref output signal 614 may be sent to an RFYM2 617.
- fhe signal from RFYM2 617 may be sent as data to GPIB 618 and may be read by computer 616.
- ⁇ Para 5Oj In the closed-loop Rl j ⁇ oltage control arrangement data from GPlB ( ⁇ H may be compared with software-defined set point 626. For example, if a voltage at the V- load network 6!
- a software-defined set point 624 of 2(X) peak may be set " through the closed-ioop control, the ⁇ oltage ⁇ al ⁇ e from the data coining back o ⁇ er CiPIB 018 may be compared to generate the control signal OAQ 620, going back to R> generator 602.
- Hie process may be iterated through a control loop algorithm to achieve a V- ref output 614 within the desired accuracy, e g.. i 5 percent, of software-defined set point 624.
- the closed-loop control may be iterated for I-load network 624 to a V-ref output 614 u ithm the desired accuracy .
- the aforementioned method establishes an accurate, single paiametei. i c, voltage, closed-loop coutioi.
- Fig, 7 shows, in accordance with an embodiment of the imention, a flow diaj ⁇ am of a control loop algorithm 700 in block diagram form for sustaining stable RF
- an initial set point 702 is sent to an RF generator 704 and a set point buffer 708
- Set point 708 may be a memory or registei location in a computei ⁇ not shown I.
- RF set point 710 may be subtracted from V-ref measurement 706 m step C 12 ⁇ in accordance with an embodiment.
- the result from step (712) may be multiplied by a gain faetoi 716.
- the iesult from step 714 may be subtracted from set point loaded into butVei 708
- the iesult from step (718) may be sent to set point buffer 70S and RF generator 7 04
- Control loop algorithm " 700 is able to preside accurate voltage control w ithin i 5 percent traceable back ⁇ NlST standards. Since RF current ⁇ allies may be calculated fiom known impedance and accurate ⁇ oltage ⁇ allies, RF current ⁇ alues r ⁇ av also be controlled to about 1.5 percent traceable back to MST standards in accordance ⁇ ith an embodiment
- Fig 8 shows, in accoi dance ⁇ ith an embodiment of the imention, a simplified schematic of a system interlock 800 for a voltage-current (V l) test fixture Sn the implementation of Fig 8, control PCB 802 may be configured with a first set of connectors 804, second set of connectots 806, an inte ⁇ lock relay 807, a ⁇ l ⁇ st interlock telay switch 808, a second interlock relay switch SiO, a voltage clamp circuit 8 l2, a darlmgton circuit 8 ! i . a 24 volt external power supply 814. and an output from the persona! computer (PO data acquisition card (D ⁇ Q) 816 in an embodiment
- Control PCB 802 is configured to ide a method of enabling and or disabling high RF power genera to ⁇ 822 under predetermined conditions for safe operations in accordance with an embodiment of the invention.
- V- ioad interlock switch 818 and, or art I-ioad interlock switch 820 may be employed Both V- ioad interlock switch 818 and, or I -load interlock switch 820 may be located under the hardware fPara 56
- a w ater cooling supply 824 may be employed to cool a high RF powered I- load system 830 by opening a water 826 and actuating a flow switch 828.
- I-l ⁇ ad system 830 may be water cooled, a system for detection of v. ater leaks and water flow raaj be employed
- the power from RF generator 822 may be disabled unless predetermined conditions for the safety interlock system are satisfied In the implementation of Fig. 8, the predetermined conditions may require the hardware intei locks to be engaged, there are no leaks detected, arsd water-cooling is enabled foi control PCB 802 to allow high RF power from generator 822 to be activated,
- I Para 57 j Consider the situation wherein, for example, the water level switches, e g., a first water level switch 834 and a second water le ⁇ el switch 836, aie part of the signal enable path to the interlock relay for leak detection
- a signal which may be denved from PC D ⁇ Q 816, may be sent out from control PCB 802
- the enable signal may be routed tluough dariington circuit 81 1 , -which is a relay driver, and connector 8Ot" to first water le ⁇ el switch 834 and second water !e ⁇ el switch 836 back to PCB interlock relay 802 tluough connectot 806 If the two w ater switches 834 and 836 are closed, the signal may be enabled bv clamp cneuit 812 to allow for control of the switches 80S and 810 within inte ⁇ lock relay 807.
- RF generator 822 may send high Rl power to the s> stem if the I-load interlock 820 and V-i ⁇ ad interlock 818 are both closed Hence, control PCB 802 only allows high Rl powet flow if a!! the predetermined conditions, i.e.. no watei leaks, water valve is opened, flow switch is closed, and hardware interlocks aie closed, are met Thus, a user may be protected from being exposed to hazards associated w ith operating high RF pow er equipment,
- ⁇ Para 6Oj Fig 9 show s, in accordance with an embodiment of the invention, a simplified schematic of a probe signal routing arrangement 900.
- a control PCB 902 is configured with a first connector ⁇ 04, a second connector ⁇ 06, a third coMiectoi 908, a piobe contact detectoi 9K), a first smgle-pole double-throw (SPDT) relay 912.
- SPDT first smgle-pole double-throw
- a second SPDT relay 916 a first voltage clamp circuit 914, a second voltage clamp circuit 91 S, a UI !T jseiect 919, a computer input/output ( !/ ⁇ ) ⁇ 920, and a 24 volts pow ei supply 922.
- V-probe may only be calibrated for ⁇ oltages.
- the voltage-current test arrangement of the invention ts configured with both a V-load network 924 and an ⁇ -load network 928 in accordance with an embodiment of the imentton.
- Voltage-current test arrangement may be employed to calibrate Vl-probe for both voltages and or currents Hence, the signal from Vl-probe 926 and/or V oi V! probe 930 needs to be routed to the appropriate channel via contioi PCB 902 m accordance with an embodiment.
- a user may want to measure a signal l ⁇ o ⁇ i V-load 928 Jbi cither a V-pr ⁇ bc 928 or a Vl-probe 930 Either probe, i.e , V ⁇ pr ⁇ be or Vl-probe, may be measured since both probes voltage measurement capability.
- ⁇ -ig. 9, ⁇ 16, and or a coaxial switch SW3 938 are in the default positions foi V-load measurement 92S.
- SPDT relay allows for processing of multiple signals other relay, e g , double-pole double-throw (DPDT) may also be employed ⁇ Para 63 j
- a UUTjseiect enable signal 919 which may be derived from computer I/O 920, may be roofed to first SPDT relay 912 with first voltage clamp circuit 9 !4 and second SPDT relay 916 with second voltage clamp circuit 918.
- SPDT relays 9! 2 and 916 are in the default positions for V -load measurement Voltage clamp circuits 914 and 918 are configured to protect darlington driver 921 from highréage spike damages.
- the high voltage spike may be directed to the -*-5V power supply derived from computer LO 920 to prevent spike damages.
- contact detector 910 may be configured in the V -load signal path to sense over-voltage contact position in either the V- ⁇ robe or VI-probe.
- V-probe and/or VI-probe are two probes being tested and calibrated for plasma applications. Each probe may have uniquely discreet signals being tested.
- Vpk Pos is a peak positive voltage available on both V-probe and/or Vi-probe.
- VpkJNeg is a peak negative voltage only available on V-probe.
- the V- probe has two voltage detection outputs. One output is employed to detect the positive form of the waveform and the other output is employed to detect the negative form of the waveform.
- lpk Pos is a positive current peak only available on VI-probe.
- the UUT select enable signal 919 is also responsible for routing -KM V power 922 from control PCB 902 through first connector 906 to V or Vl probe 930 in an embodiment.
- +24 V power 922 is routed from control PCB 902 through second connector 908 to third switch (S W3 ) 938.
- Coaxial switch SW3 938 in the default position, is configured Io route RF power from a coaxial switch SW2 940 to V-load network 928.
- RF buffered outputs from V or VJ probe 930 is routed to RFVM 936.
- digital output signal UUT select 919 also determines the enable to test a VI-probe 926 for the i-load network 924.
- SPDT relays 912 and 916 switch to the alternate positions to route +24 V DC power 922 over to VI-probe 926 through connector 904.
- the enable signal routes +24 V DC power 922 over to coaxial switch SW3 938 through connector 908 SW3 938 is selected to the alternate position to route RF power from S ⁇ V2 940 fo I-load 924 RF buffered outputs from VI probe 926 are routed to R FVM
- embodiments of the invention pro ⁇ ide methods and arrangements tor measuring RF current in addition to voltage values to calibrate ⁇ oitage and or voltage-current probes
- the probes may be calibrated to measure and control ⁇ oitage and current within 1.5 percent traceable to N ⁇ S 1 " standards.
- high accuracy RF measurements during plasma processing ma> tianslate to better process control, which niay allow the end user to make w afer or electronic components with finei features
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Abstract
Description
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Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008801055131A CN101796624B (en) | 2007-06-28 | 2008-06-25 | Method and apparatus for voltage/current probe test setup |
| JP2010515069A JP5432134B2 (en) | 2007-06-28 | 2008-06-25 | Diagnostic tool for probe calibration and probe calibration method |
| KR1020107001880A KR101423364B1 (en) | 2007-06-28 | 2008-06-25 | Method and apparatus for a voltage/current probe test arrangements |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/770,636 | 2007-06-28 | ||
| US11/770,636 US7649363B2 (en) | 2007-06-28 | 2007-06-28 | Method and apparatus for a voltage/current probe test arrangements |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| WO2009006152A2 true WO2009006152A2 (en) | 2009-01-08 |
| WO2009006152A3 WO2009006152A3 (en) | 2009-03-19 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/US2008/068156 Ceased WO2009006152A2 (en) | 2007-06-28 | 2008-06-25 | Method and apparatus for a voltage/current probe test arrangements |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7649363B2 (en) |
| JP (1) | JP5432134B2 (en) |
| KR (1) | KR101423364B1 (en) |
| CN (1) | CN101796624B (en) |
| TW (1) | TWI418832B (en) |
| WO (1) | WO2009006152A2 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI560462B (en) * | 2014-10-29 | 2016-12-01 | Chroma Ate Inc | Detect hot switch method for a semiconductor integrated circuit tester |
| US10340127B2 (en) | 2013-01-31 | 2019-07-02 | Lam Research Corporation | Using modeling to determine wafer bias associated with a plasma system |
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| US5654679A (en) * | 1996-06-13 | 1997-08-05 | Rf Power Products, Inc. | Apparatus for matching a variable load impedance with an RF power generator impedance |
| US6653852B1 (en) * | 2000-03-31 | 2003-11-25 | Lam Research Corporation | Wafer integrated plasma probe assembly array |
| AU2002236599A1 (en) * | 2001-01-08 | 2002-07-16 | Tokyo Electron Limited | Capacity coupled rf voltage probe |
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| US7086347B2 (en) * | 2002-05-06 | 2006-08-08 | Lam Research Corporation | Apparatus and methods for minimizing arcing in a plasma processing chamber |
| KR100708313B1 (en) | 2002-10-31 | 2007-04-17 | 세메스 주식회사 | Plasma processing apparatus and plasma processing method |
| US7169625B2 (en) * | 2003-07-25 | 2007-01-30 | Applied Materials, Inc. | Method for automatic determination of semiconductor plasma chamber matching and source of fault by comprehensive plasma monitoring |
| US6983215B2 (en) * | 2003-12-02 | 2006-01-03 | Mks Instruments, Inc. | RF metrology characterization for field installation and serviceability for the plasma processing industry |
| US7076347B2 (en) * | 2004-01-23 | 2006-07-11 | General Motors Corporation | Brake booster vacuum sensor diagnostic |
| US7326872B2 (en) * | 2004-04-28 | 2008-02-05 | Applied Materials, Inc. | Multi-frequency dynamic dummy load and method for testing plasma reactor multi-frequency impedance match networks |
| JP5116667B2 (en) * | 2005-06-10 | 2013-01-09 | バード テクノロジーズ グループ インク. | System and method for analyzing power flow in a semiconductor plasma generation system |
| CN101297480B (en) * | 2005-10-31 | 2012-08-08 | Mks仪器股份有限公司 | Radio frequency power delivery system and method |
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2007
- 2007-06-28 US US11/770,636 patent/US7649363B2/en not_active Expired - Fee Related
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2008
- 2008-06-25 JP JP2010515069A patent/JP5432134B2/en not_active Expired - Fee Related
- 2008-06-25 CN CN2008801055131A patent/CN101796624B/en active Active
- 2008-06-25 WO PCT/US2008/068156 patent/WO2009006152A2/en not_active Ceased
- 2008-06-25 KR KR1020107001880A patent/KR101423364B1/en not_active Expired - Fee Related
- 2008-06-26 TW TW097123839A patent/TWI418832B/en not_active IP Right Cessation
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10340127B2 (en) | 2013-01-31 | 2019-07-02 | Lam Research Corporation | Using modeling to determine wafer bias associated with a plasma system |
| TWI560462B (en) * | 2014-10-29 | 2016-12-01 | Chroma Ate Inc | Detect hot switch method for a semiconductor integrated circuit tester |
| EP3991198A4 (en) * | 2019-06-28 | 2023-06-28 | Comet Technologies USA, Inc | An arc suppression device for plasma processing equipment |
| US11972928B2 (en) | 2019-06-28 | 2024-04-30 | COMET Technologies USA, Inc. | Method and system for plasma processing arc suppression |
| TWI899187B (en) * | 2020-03-19 | 2025-10-01 | 美商蘭姆研究公司 | Substrate processing system |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2010532083A (en) | 2010-09-30 |
| CN101796624B (en) | 2012-02-22 |
| KR20100040888A (en) | 2010-04-21 |
| TW200933183A (en) | 2009-08-01 |
| US7649363B2 (en) | 2010-01-19 |
| JP5432134B2 (en) | 2014-03-05 |
| US20090066342A1 (en) | 2009-03-12 |
| KR101423364B1 (en) | 2014-07-24 |
| TWI418832B (en) | 2013-12-11 |
| WO2009006152A3 (en) | 2009-03-19 |
| CN101796624A (en) | 2010-08-04 |
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