WO2009000608A3 - Method for producing filmlike semiconductor materials and/or electronic elements by primary forming and/or coating - Google Patents

Method for producing filmlike semiconductor materials and/or electronic elements by primary forming and/or coating Download PDF

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Publication number
WO2009000608A3
WO2009000608A3 PCT/EP2008/056693 EP2008056693W WO2009000608A3 WO 2009000608 A3 WO2009000608 A3 WO 2009000608A3 EP 2008056693 W EP2008056693 W EP 2008056693W WO 2009000608 A3 WO2009000608 A3 WO 2009000608A3
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor material
substrate
primary forming
filmlike
coating
Prior art date
Application number
PCT/EP2008/056693
Other languages
German (de)
French (fr)
Other versions
WO2009000608A2 (en
Inventor
Martin Trocha
Georg-J Schmitz
Dieter Franke
Thomas Baehr
Ruediger Tiefers
Stephan Rex
Markus Apel
Original Assignee
Evonik Degussa Gmbh
Martin Trocha
Georg-J Schmitz
Dieter Franke
Thomas Baehr
Ruediger Tiefers
Stephan Rex
Markus Apel
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Evonik Degussa Gmbh, Martin Trocha, Georg-J Schmitz, Dieter Franke, Thomas Baehr, Ruediger Tiefers, Stephan Rex, Markus Apel filed Critical Evonik Degussa Gmbh
Priority to EP08760281A priority Critical patent/EP2160755A2/en
Publication of WO2009000608A2 publication Critical patent/WO2009000608A2/en
Publication of WO2009000608A3 publication Critical patent/WO2009000608A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02601—Nanoparticles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/0245—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Electromagnetism (AREA)
  • Nanotechnology (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)

Abstract

The present invention relates to a production method for filmlike semiconductor materials and/or electronic elements by primary forming and/or coating. A characteristic feature of the method is the application of a size composed of nanoscale, system-inherent substances on the surface of the substrate to be coated or on the surface of the mould used in the primary forming method. Said size enables a filmlike semiconductor material to be released more simply from the substrate after the primary forming or coating process, reduces reactions with the substrate or mould material and hence contamination of the semiconductor material and reduces the heat transfer from the semiconductor material into the substrate with possibly advantageous effects on the microstructure of the semiconductor material, in particular its average grain size. In an advantageous configuration of the invention, the size is used not just with regard to better releasability from the substrate and reduced contamination of the semiconductor material but can furthermore be used in a targeted manner for producing a dopant pattern in the semiconductor material. For this purpose, at least two sizes having different dopant contents are applied to the substrate in a defined pattern. These dopant patterns are transferred during the primary forming and/or coating process by diffusion into the semiconductor material.
PCT/EP2008/056693 2007-06-26 2008-05-30 Method for producing filmlike semiconductor materials and/or electronic elements by primary forming and/or coating WO2009000608A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP08760281A EP2160755A2 (en) 2007-06-26 2008-05-30 Method for producing filmlike semiconductor materials and/or electronic elements by primary forming and/or coating

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102007029576.8 2007-06-26
DE102007029576A DE102007029576A1 (en) 2007-06-26 2007-06-26 Process for the production of film-like semiconductor materials and / or electronic elements by prototyping and / or coating

Publications (2)

Publication Number Publication Date
WO2009000608A2 WO2009000608A2 (en) 2008-12-31
WO2009000608A3 true WO2009000608A3 (en) 2009-02-19

Family

ID=39798099

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2008/056693 WO2009000608A2 (en) 2007-06-26 2008-05-30 Method for producing filmlike semiconductor materials and/or electronic elements by primary forming and/or coating

Country Status (4)

Country Link
EP (1) EP2160755A2 (en)
CN (1) CN101335194A (en)
DE (1) DE102007029576A1 (en)
WO (1) WO2009000608A2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008049303B4 (en) * 2008-09-29 2012-05-24 Qimonda Ag Process for producing a silicon wafer and silicon wafers for solar cells
DE102015226516B4 (en) * 2015-12-22 2018-02-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung eingetragener Verein Method for doping semiconductor substrates by means of a co-diffusion process

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030183160A1 (en) * 2002-03-26 2003-10-02 Hitachi Cable, Ltd. Method for producing nitride semiconductor crystal, and nitride semiconductor wafer and nitride semiconductor device
WO2006063893A1 (en) * 2004-12-15 2006-06-22 Degussa Gmbh Method for the production of semiconducting or photovoltaically active films
US20060154451A1 (en) * 2005-01-07 2006-07-13 Samsung Corning Co., Ltd. Epitaxial growth method
WO2006101225A1 (en) * 2005-03-22 2006-09-28 Sumitomo Chemical Company, Limited Free-standing substrate, manufacturing method thereof and semiconductor light-emitting device
US20070108466A1 (en) * 2005-08-31 2007-05-17 University Of Florida Research Foundation, Inc. Group III-nitrides on Si substrates using a nanostructured interlayer

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4003770A (en) 1975-03-24 1977-01-18 Monsanto Research Corporation Plasma spraying process for preparing polycrystalline solar cells
DE2927086C2 (en) 1979-07-04 1987-02-05 Siemens AG, 1000 Berlin und 8000 München Process for producing plate- or ribbon-shaped silicon crystal bodies with column structure for solar cells

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030183160A1 (en) * 2002-03-26 2003-10-02 Hitachi Cable, Ltd. Method for producing nitride semiconductor crystal, and nitride semiconductor wafer and nitride semiconductor device
WO2006063893A1 (en) * 2004-12-15 2006-06-22 Degussa Gmbh Method for the production of semiconducting or photovoltaically active films
US20060154451A1 (en) * 2005-01-07 2006-07-13 Samsung Corning Co., Ltd. Epitaxial growth method
WO2006101225A1 (en) * 2005-03-22 2006-09-28 Sumitomo Chemical Company, Limited Free-standing substrate, manufacturing method thereof and semiconductor light-emitting device
DE112006000654T5 (en) * 2005-03-22 2008-04-03 Sumitomo Chemical Co., Ltd. Unsupported substrate, method of making the same and semiconductor luminescent device
US20070108466A1 (en) * 2005-08-31 2007-05-17 University Of Florida Research Foundation, Inc. Group III-nitrides on Si substrates using a nanostructured interlayer

Also Published As

Publication number Publication date
DE102007029576A1 (en) 2009-01-08
WO2009000608A2 (en) 2008-12-31
CN101335194A (en) 2008-12-31
EP2160755A2 (en) 2010-03-10

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