WO2008155832A1 - Semiconductor device, and its manufacturing method - Google Patents

Semiconductor device, and its manufacturing method Download PDF

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Publication number
WO2008155832A1
WO2008155832A1 PCT/JP2007/062398 JP2007062398W WO2008155832A1 WO 2008155832 A1 WO2008155832 A1 WO 2008155832A1 JP 2007062398 W JP2007062398 W JP 2007062398W WO 2008155832 A1 WO2008155832 A1 WO 2008155832A1
Authority
WO
WIPO (PCT)
Prior art keywords
insulating film
over
forming
storage elements
semiconductor device
Prior art date
Application number
PCT/JP2007/062398
Other languages
French (fr)
Japanese (ja)
Inventor
Taiji Ema
Original Assignee
Fujitsu Microelectronics Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Microelectronics Limited filed Critical Fujitsu Microelectronics Limited
Priority to PCT/JP2007/062398 priority Critical patent/WO2008155832A1/en
Priority to TW096122478A priority patent/TW200901442A/en
Publication of WO2008155832A1 publication Critical patent/WO2008155832A1/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices

Abstract

Provided is a semiconductor device manufacturing method comprising a first step of forming a first wiring line (28a) over a semiconductor substrate (10), a second step of forming storage elements (30) over the first wiring line, a third step of so forming a first insulating film (42) over the semiconductor substrate as to bury the storage elements, a fourth step of forming such a second insulating film (44) over the first insulating film and the storage elements as has etching characteristics different from those of the first insulating film, a fifth step of etching the second insulating film by using the first insulating film as an etching stopper, thereby to form such grooves (46) in the second insulating film as to expose the upper portions of the storage elements, and a sixth step of burying second wiring lines (32a) in the grooves.
PCT/JP2007/062398 2007-06-20 2007-06-20 Semiconductor device, and its manufacturing method WO2008155832A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
PCT/JP2007/062398 WO2008155832A1 (en) 2007-06-20 2007-06-20 Semiconductor device, and its manufacturing method
TW096122478A TW200901442A (en) 2007-06-20 2007-06-22 Semiconductor device and method for manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/062398 WO2008155832A1 (en) 2007-06-20 2007-06-20 Semiconductor device, and its manufacturing method

Publications (1)

Publication Number Publication Date
WO2008155832A1 true WO2008155832A1 (en) 2008-12-24

Family

ID=40155998

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/062398 WO2008155832A1 (en) 2007-06-20 2007-06-20 Semiconductor device, and its manufacturing method

Country Status (2)

Country Link
TW (1) TW200901442A (en)
WO (1) WO2008155832A1 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009123900A (en) * 2007-11-14 2009-06-04 Toshiba Corp Non-volatile semiconductor storage device
WO2012073503A1 (en) * 2010-12-03 2012-06-07 パナソニック株式会社 Non-volatile storage element, non-volatile storage device, and method for manufacturing same
WO2020179199A1 (en) * 2019-03-04 2020-09-10 パナソニックセミコンダクターソリューションズ株式会社 Non-volatile memory device and production method thereof
US11411181B2 (en) 2020-03-30 2022-08-09 Taiwan Semiconductor Manufacturing Co., Ltd. Phase-change memory device and method

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005523575A (en) * 2002-04-18 2005-08-04 インフィネオン テクノロジーズ アクチエンゲゼルシャフト Combination of materials of tunnel junction cap layer, tunnel junction hard mask, and tunnel junction stack seed film in MRAM processing
JP2005524238A (en) * 2002-04-30 2005-08-11 マイクロン テクノロジー インコーポレイテッド Manufacturing method of MRAM element
JP2007042804A (en) * 2005-08-02 2007-02-15 Renesas Technology Corp Semiconductor device and manufacturing method thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005523575A (en) * 2002-04-18 2005-08-04 インフィネオン テクノロジーズ アクチエンゲゼルシャフト Combination of materials of tunnel junction cap layer, tunnel junction hard mask, and tunnel junction stack seed film in MRAM processing
JP2005524238A (en) * 2002-04-30 2005-08-11 マイクロン テクノロジー インコーポレイテッド Manufacturing method of MRAM element
JP2007042804A (en) * 2005-08-02 2007-02-15 Renesas Technology Corp Semiconductor device and manufacturing method thereof

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009123900A (en) * 2007-11-14 2009-06-04 Toshiba Corp Non-volatile semiconductor storage device
US8575589B2 (en) 2007-11-14 2013-11-05 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device and method of manufacturing the same
WO2012073503A1 (en) * 2010-12-03 2012-06-07 パナソニック株式会社 Non-volatile storage element, non-volatile storage device, and method for manufacturing same
CN103168359A (en) * 2010-12-03 2013-06-19 松下电器产业株式会社 Non-volatile storage element, non-volatile storage device, and method for manufacturing same
JPWO2012073503A1 (en) * 2010-12-03 2014-05-19 パナソニック株式会社 Nonvolatile memory element, nonvolatile memory device and manufacturing method thereof
US9214628B2 (en) 2010-12-03 2015-12-15 Panasonic Intellectual Property Management Co., Ltd. Nonvolatile memory element, nonvolatile memory device, and manufacturing method for the same
WO2020179199A1 (en) * 2019-03-04 2020-09-10 パナソニックセミコンダクターソリューションズ株式会社 Non-volatile memory device and production method thereof
US11411181B2 (en) 2020-03-30 2022-08-09 Taiwan Semiconductor Manufacturing Co., Ltd. Phase-change memory device and method

Also Published As

Publication number Publication date
TW200901442A (en) 2009-01-01

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