WO2008152878A1 - Crystal silicone element - Google Patents

Crystal silicone element Download PDF

Info

Publication number
WO2008152878A1
WO2008152878A1 PCT/JP2008/058961 JP2008058961W WO2008152878A1 WO 2008152878 A1 WO2008152878 A1 WO 2008152878A1 JP 2008058961 W JP2008058961 W JP 2008058961W WO 2008152878 A1 WO2008152878 A1 WO 2008152878A1
Authority
WO
WIPO (PCT)
Prior art keywords
silicone
crystal
silicones
single crystal
thin film
Prior art date
Application number
PCT/JP2008/058961
Other languages
French (fr)
Japanese (ja)
Inventor
Hideo Honma
Original Assignee
Hitachi Maxell, Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Maxell, Ltd. filed Critical Hitachi Maxell, Ltd.
Publication of WO2008152878A1 publication Critical patent/WO2008152878A1/en

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • H05B33/145—Arrangements of the electroluminescent material

Abstract

A crystal silicone element is provided with a single crystal silicone substrate (10) having a pair of surfaces, a plurality of crystal silicones (15) formed on one main surface of the single crystal silicone substrate (10), a silicone thin film (18) formed on the crystal silicones (15), a metal electrode (20) positioned on the other surface-side of the single crystal silicone substrate (10), a transparent electrode (19) which forms a pair of electrodes with the metal electrode (20) and is positioned on the silicone thin film (18) and silicone oxide films (16) surrounding sides of the crystal silicones (15). Thus, light having a desired wavelength can highly efficiently be drawn out.
PCT/JP2008/058961 2007-06-11 2008-05-15 Crystal silicone element WO2008152878A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007154344A JP2008306135A (en) 2007-06-11 2007-06-11 Crystal silicon element
JP2007-154344 2007-06-11

Publications (1)

Publication Number Publication Date
WO2008152878A1 true WO2008152878A1 (en) 2008-12-18

Family

ID=40129491

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/058961 WO2008152878A1 (en) 2007-06-11 2008-05-15 Crystal silicone element

Country Status (2)

Country Link
JP (1) JP2008306135A (en)
WO (1) WO2008152878A1 (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0555627A (en) * 1991-08-27 1993-03-05 Nippondenso Co Ltd Injection light emitting element
JPH06283754A (en) * 1993-03-25 1994-10-07 Nippon Steel Corp Light emitting element
JPH11135830A (en) * 1997-08-29 1999-05-21 Toshiba Corp Semiconductor device
JP2007027448A (en) * 2005-07-19 2007-02-01 Matsushita Electric Works Ltd Semiconductor light emitting device, lighting device using same, and method of manufacturing same
WO2007018076A1 (en) * 2005-08-05 2007-02-15 Hitachi Maxell, Ltd. Crystal silicon element and method for fabricating same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0555627A (en) * 1991-08-27 1993-03-05 Nippondenso Co Ltd Injection light emitting element
JPH06283754A (en) * 1993-03-25 1994-10-07 Nippon Steel Corp Light emitting element
JPH11135830A (en) * 1997-08-29 1999-05-21 Toshiba Corp Semiconductor device
JP2007027448A (en) * 2005-07-19 2007-02-01 Matsushita Electric Works Ltd Semiconductor light emitting device, lighting device using same, and method of manufacturing same
WO2007018076A1 (en) * 2005-08-05 2007-02-15 Hitachi Maxell, Ltd. Crystal silicon element and method for fabricating same

Also Published As

Publication number Publication date
JP2008306135A (en) 2008-12-18

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