WO2008151009A1 - Dispositifs d'éclairage robustes sur le plan environnemental et procédés de fabrication de ceux-ci - Google Patents

Dispositifs d'éclairage robustes sur le plan environnemental et procédés de fabrication de ceux-ci Download PDF

Info

Publication number
WO2008151009A1
WO2008151009A1 PCT/US2008/065308 US2008065308W WO2008151009A1 WO 2008151009 A1 WO2008151009 A1 WO 2008151009A1 US 2008065308 W US2008065308 W US 2008065308W WO 2008151009 A1 WO2008151009 A1 WO 2008151009A1
Authority
WO
WIPO (PCT)
Prior art keywords
light emitting
emitting chip
set forth
overmolding
vinyl
Prior art date
Application number
PCT/US2008/065308
Other languages
English (en)
Inventor
Jeffrey Marc Nall
Srinath K. Aanegola
Koushik Saha
Xin Wang
Kevin Carpenter
Original Assignee
Lumination Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lumination Llc filed Critical Lumination Llc
Publication of WO2008151009A1 publication Critical patent/WO2008151009A1/fr

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations
    • H01L33/56Materials, e.g. epoxy or silicone resin
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations
    • H01L33/54Encapsulations having a particular shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/501Wavelength conversion elements characterised by the materials, e.g. binder

Definitions

  • Light emitting diodes are rapidly gaining market share, especially for outdoor lighting applications where their improved robustness against environmental damage and longer operating lifetimes are distinct advantages compared with incandescent and fluorescent light sources.
  • Some rigorous environments in which light emitting diodes have found application include outdoor backlit signage, exterior architecture lighting, illuminated outdoor advertisements, traffic signals, and so forth.
  • the light emitting diode includes a semiconductor light emitting diode chip comprising a layered structure including group Ill-nitride layers that emits in the blue, violet or ultraviolet, optically coupled with a phosphor or phosphor blend that downconverts some or all of the blue, violet, or ultraviolet emission.
  • a white emitting phosphor blend is used, and the light emitting diode is designed so that most or all of the chip emission is converted to white by the phosphor blend.
  • the phosphor or phosphor blend emits yellow, red, or other relatively longer wavelength light that blends with blue or violet chip emission to produce white light.
  • Other materials besides group Ill-nitrides can be used to fabricate the light emitting chip, and some light emitting diodes output the chip radiation directly without downconversion by a phosphor.
  • the light emitting diode chip is encapsulated by a transparent encapsulant, and the phosphor or phosphor blend is disposed on the chip, dispersed in the encapsulant, disposed on top of the encapsulant, or otherwise arranged to receive and downconvert the chip emission.
  • the encapsulant provides environmental protection, provides a substrate or matrix for supporting the phosphor or phosphor blend, and optionally acts as a refractive or diffractive optical element, for example by being formed into a lens.
  • Epoxy is a known transparent encapsulant material suitable for use in light emitting diodes.
  • typical epoxies have been found to degrade in the presence of the operating light emitting diode chip.
  • the degradation manifests as a "browning" or other discoloration of the epoxy, which acts as a light absorber and substantially reduces light output efficiency.
  • This degradation is particularly problematic when the chip emits in the violet or ultraviolet range, although epoxy degradation due to longer wavelength emission and/or heating caused by the operating chip is also of concern.
  • silicone which shows greater robustness to exposure to an operating light emitting diode chip, and generally does not "brown" or otherwise discolor over time in such an environment.
  • silicone does not provide an effective hermetic sealing of the encapsulated light emitting diode chip. This lack of hermetic sealing can lead to environmental exposure of the chip, lead frame, or other components.
  • light emitting diodes employing silicone encapsulation have lower yield during manufacturing due to higher impact on the chip of processes such as reflow soldering, and are expected to have higher failure rates when used outdoors or in other rigorous environments.
  • the limited sealing ability of silicone is particularly problematic in surface mount light emitting diodes in which the chip is mounted to a circuit board directly or via the intermediary of a small slug or other submount. In such devices, sealing the gap or interface between the circuit board and the chip is especially problematic.
  • a transparent silicone encapsulant is used, and a conformal spray coating is applied over the silicone.
  • the spray coating can provide additional sealing, but is prone to lower yields and reliability problems due to non-uniformities sometimes observed in spray coatings.
  • Such spray coatings sometimes have small voids, holes, thin regions, or so forth that compromise the intended hermetic sealing.
  • Epoxy spray coatings are expected to be less prone to degradation due to the separation from the chip — however, degradation of the epoxy spray coating is nonetheless sometimes observed. Silicone spray coatings suffer from the same deficiencies as the silicone encapsulant itself, and accordingly typically provide less than ideal hermetic sealing.
  • a separate enclosure or cover is provided.
  • Aanegola et al. U.S. Publ. Appl. 2005/0239227 Al, discloses a surface mount light emitting diode disposed on a circuit board and encapsulated by silicone, over which is placed a dome-shaped cover of glass or another transparent material.
  • the dome-shaped cover is hermetically sealed with the circuit board.
  • a phosphor or phosphor blend may be disposed on the dome-shaped cover, in the silicone, or over the chip.
  • dome-shaped cover over the silicone encapsulant and sealing of the cover to the circuit board adds manufacturing complexity.
  • Thermal expansion or contraction due to large outdoor temperature changes can produce overpressure or underpressure in the sealed volume defined by the circuit board and the dome-shaped cover.
  • Other enclosure or covering approaches such as covering by a separate lensing element, enclosure in a sealed traffic light housing, or so forth similarly add manufacturing complexity and raise the possibility of temperature-related overpressures or underpressures.
  • the enclosure or cover also does not provide protection against damage during reflow soldering or other manufacturing processes that may precede addition of the cover or enclosure.
  • a lighting device comprises: a light emitting chip; and a light transmissive vinyl or acrylic layer sealing an assembly including at least the light emitting chip.
  • the lighting device further includes an encapsulant disposed over the light emitting chip, the assembly sealed by the light transmissive vinyl or acrylic layer further including the encapsulant.
  • a method of fabricating a lighting device comprises: encapsulating a light emitting chip with a silicone encapsulant; and sealing an assembly including at least the silicone encapsulant and the light emitting chip using a light transmissive vinyl or acrylic layer.
  • a method of fabricating a lighting device comprises: encapsulating a light emitting chip with a silicone encapsulant; and sealing an assembly including at least the silicone encapsulant and the light emitting chip by disposing a light transmissive plastic layer as a unit over the assembly.
  • the invention may take form in various components and arrangements of components, and in various process operations and arrangements of process operations.
  • the drawings are only for purposes of illustrating preferred embodiments and are not to be construed as limiting the invention. Unless otherwise indicated, the drawings are not to scale.
  • FIGURE 1 diagrammatically illustrates a portion of a lighting device in the process of being fabricated, including a surface mount light emitting diode package disposed on an overmolded substrate and a light transmissive plastic sheet positioned above the light emitting diode package for installation.
  • FIGURE 2 diagrammatically illustrates the portion of the lighting package of FIGURE 1 after hermetic sealing of the light emitting diode package and a surrounding portion of the overmolded substrate.
  • FIGURE 3 diagrammatically illustrates a portion of a lighting device in the process of being fabricated, including a surface mount light emitting diode package disposed on an overmolded substrate and a light transmissive plastic sheet positioned above the light emitting diode package for installation.
  • FIGURE 4 diagrammatically illustrates the portion of the lighting package of FIGURE 3 after hermetic sealing of the light emitting diode package.
  • FIGURE 5 diagrammatically illustrates a portion of a lighting device in the process of being fabricated, including a surface mount light emitting diode package disposed on a substrate and a light transmissive plastic sheet disposed over the surface mounted light emitting diode package. Portions of isolation pin of an overmold die are shown in phantom extending to contact the light transmissive plastic sheet.
  • FIGURE 6 diagrammatically illustrates the portion of the lighting package of FIGURE 5 after overmolding.
  • the portions of the isolation pin of the overmold die used to isolate the light emitting diode package are again shown in phantom.
  • a surface mount light emitting diode package 10 is mounted to a surface 12 of a substrate 14 configured to convey operative electrical power to the light emitting chip.
  • the substrate 14 in some embodiment is a printed circuit board.
  • the light emitting diode package 10 includes a lead frame or submount 16 configured to support a light emitting diode chip 18.
  • a silicone encapsulant 20 is disposed over the light emitting diode chip 18. Forming the encapsulant 20 of a material other than silicone is also contemplated.
  • the light emitting diode chip 18 may include a group Ill-nitride layer structure defining a light emitting diode junction.
  • the light emitting diode chip 18 may be configured to emit light with a peak wavelength in the blue, violet, or ultraviolet region — for example, group Ill-nitride and silicon carbide based light emitting diodes suitably emit light with a peak wavelength in the blue, violet, or ultraviolet region.
  • a phosphor or phosphor blend is disposed in, under, or over the silicone encapsulant 20, the phosphor or phosphor blend being configured to downconvert at least a substantial portion of light generated by the light emitting chip.
  • the light emitting diode chip 18 may be configured to emit light with a peak wavelength in the blue, violet, or ultraviolet region, and the phosphor or phosphor blend may include primary color phosphor components that cooperatively downconvert most or all of the emitted light to white or approximately white light.
  • the light emitting diode chip 18 may be configured to emit light with a peak wavelength in the blue region, and the phosphor or phosphor blend may include yellow, orange, or other components that downconvert a portion, but not all, of the emitted light such that the combination of unconverted direct blue light and downconverted longer wavelength light approximates white light.
  • the light emitting diode chip 18 is contemplated to be an organic light emitting diode chip. While only a single light emitting diode chip 18 is shown in the illustrated light emitting diode package 10, it is contemplated to have a surface mount light emitting diode package or other light emitting diode package in which two, three, or more light emitting diode chips are commonly encapsulated by an encompassing silicone encapsulant.
  • a single light emitting diode package may include red-emitting, blue-emitting, and green-emitting light emitting chips selectively energizable to generate various colors or combinations of colors.
  • the lighting device may include one, two, three, four, five, ten, twenty, fifty, or substantially any number of light emitting diode packages, which may all be the same, or all different, or various combinations of the same and different light emitting diode packages.
  • An overmolding 22 is disposed over at least a portion of the surface 12 of the substrate 14, but not over the light emitting package 10.
  • the overmolding 22 substantially encases the substrate 14 except for openings for the light emitting diode package 10, and for any other additional light emitting diode packages (not shown). In other embodiments, a lesser portion of the substrate is overmolded. In yet other embodiments, the overmolding 22 is optionally formed by potting or another substrate sealing process (or partial substrate sealing process). In some embodiments in which the overmolding 22 is included, the overmolding 22 is formed by injection overmolding. In some embodiments, the overmolding 22 is made of a polyvinyl chloride (PVC) material, although other potting or overmolding materials can be used.
  • PVC polyvinyl chloride
  • the silicone encapsulant 20 of the light emitting diode package 10 advantageously provides mechanical sealing of the light emitting diode chip 18, and also provides some protection from water and other contaminants.
  • the silicone encapsulant 20 suitably serves as a host material for a phosphor or phosphor blend, if included in the light emitting diode package 10, or suitably serves as a spacer to separate the phosphor or phosphor blend from the light emitting diode package 10.
  • the silicone encapsulant 20 does not provide a wholly satisfactory hermetic sealing of the encapsulated light emitting diode chip 18. Accordingly, there may be some environmental exposure of the light emitting diode chip 18, portions of the lead frame or submount 16, or other components.
  • the optional overmolding 22 provides substantial sealing of the substrate 14 (or of overmolded portions of the substrate 14), but the light emitting diode package 10 of FIGURES 1 and 2 is not covered by the overmolding.
  • the overmolding 22 is substantially opaque respective to light output by the light emitting diode package 10, which precludes overmolding the light emitting diode package 10.
  • the overmolding 22 is translucent or transmissive for light output by the light emitting diode package 10, it may be advantageous to avoid overmolding the light emitting diode package 10 to avoid light attenuation, light scattering, light diffraction, or other optical effects that may be deemed undesirable.
  • a plastic sheet 30 is disposed over an assembly including at least the silicone encapsulant 20 and the light emitting chip 18, and optionally over additional components such as a portion of the surface 12 of the substrate 14 and a surrounding portion of the overmolding 22.
  • the plastic sheet 30 is suitably made of an ultraviolet-resistant material in the case in which the light emitting chip 18 emits some, mostly, or all ultraviolet light.
  • Some suitable ultraviolet-resistant materials include vinyl and acrylic.
  • Other contemplated plastic materials suitable for the plastic sheet 30 include polycarbonate or polyethylene.
  • the plastic sheet 30 should have a thickness sufficient to provide environmental protection, but is advantageously thin to reduce light absorption.
  • a 2-4 mil sheet (i.e., sheet thickness of less than or about one-tenth of a millimeter) of vinyl or acrylic is expected to absorb less than or about six percent of light generated by the assembly, while providing suitable environmental protection.
  • the use of thicker plastic sheets is also contemplated.
  • the plastic sheet 30 is a portion of 3MTM ScotchcalTM translucent vinyl (available from 3M, St. Paul, MN, USA) which includes a suitable acrylic adhesive 32. Other adhesives, such as various "superglues" can also be used.
  • the adhesive 32 is also substantially light transmissive.
  • the plastic sheet 30 is provided as a unit, i.e. as a standalone sheet of vinyl or acrylic with the adhesive 32 on a side adjacent to the assembly, as shown in FIGURE 1.
  • the plastic sheet 30 is disposed over the assembly which includes, as seen in FIGURE 2, the light emitting chip 18 disposed in the lead frame or submount 16 and encapsulated in silicone 20, and surrounding portions of the surface 12 of the substrate 14 with overmolding 22.
  • a plastic sheet 40 that is smaller in area and again coated on one side with adhesive 42 is suitably used.
  • the plastic sheet 40 is disposed over the assembly which includes, as seen in FIGURE 4, the light emitting chip 18 disposed in the lead frame or submount 16 and encapsulated in silicone 20.
  • the smaller plastic sheet 40 does not cover any surrounding portions of the surface 12 of the substrate 14 with overmolding 22.
  • the plastic sheet 30, 40 is sufficiently flexible to substantially conformally cover the silicone encapsulant 20 and, in the case of the embodiment of FIGURES 1 and 2, the plastic sheet 30 is sufficiently flexible to substantially conformally cover the surrounding overmolding 22 including the illustrated depressed surrounding region of overmolding 22.
  • the plastic sheet 30 does not "fill in” the gaps between the surface mount light emitting diode package 10 and the surrounding overmolding 22.
  • the plastic sheet 30 in conjunction with the adhesive 32 forms a hermetic seal with the surrounding overmolding 22, and the overmolding 22 in turn forms a hermetic seal with the surface 12 of the substrate 14. Accordingly, the surface mounted light emitting diode package 10 is hermetically sealed by the combination of the plastic sheet 30 and adhesive 32 and the overmolding 22.
  • the plastic sheet 30, 40 of vinyl, acrylic, polycarbonate, polyethylene, or another environmentally resistant plastic is disposed as a unit.
  • the plastic sheet is provided as a free-standing sheet portion that is adhered to the silicone 20 and optionally to surrounding components such as the lead frame or submount 16 or the surrounding overmolding 22.
  • This approach has certain advantages. It enables use of existing sources of thin vinyl or acrylic sheeting with adhesive having thicknesses of less than or about one-tenth of a millimeter such as 3MTM ScotchcalTM translucent vinyl sheeting.
  • Such commercial vinyl or acrylic sheeting tends to be substantially free (at least on the size scale of the light emitting diode package 10) of microvoids, pinholes, or other structural defects that if present may compromise the integrity of the environmental sealing.
  • spray coating or other layer deposition or other piecemeal deposition techniques are typically more prone to exhibiting pinholes, microvoids, or other structural defects.
  • commercially available vinyl or acrylic sheeting is known for macroscopic use in signage, e.g. to cover the face of an outdoor sign, and accordingly is available with various optical finishes or features such as light diffusing finishes, color filtering, prismatic light spreading effects, and so forth.
  • the illustrated sheets 30, 40 have adhesive 32, 42 pre-applied to the sheet.
  • This arrangement has certain advantages, and some commercial vinyl or acrylic sheeting such as 3MTM ScotchcalTM translucent vinyl sheeting come with such adhesive provided.
  • the adhesive can be on the plastic sheet, or can be applied preferentially in areas on the surface 12 of the substrate 14, or on the overmolding 22, or on the exposed surface of the silicone encapsulant 20, or so forth.
  • the applied plastic sheet 30, 40 can be of varying size. Vinyl, acrylic, or other plastic materials in thin sheet form are typically readily die-cut into the desired shape and size for disposal over the light emitting diode package 10.
  • the disposing of the vinyl, acrylic, or other plastic layer as a unit is preferred, it is also contemplated to dispose a vinyl, acrylic, or other ultraviolet- resistant layer in place of the sheets 30, 40 using spray coating or another deposition technique such that the layer is not disposed over the assembly as a unit.
  • a phosphor or phosphor blend may be disposed in, under, or over the silicone encapsulant 20, the phosphor or phosphor blend being configured to downconvert at least a substantial portion of light generated by the light emitting chip.
  • the manufacturing sequence includes performing the overmolding first, followed by disposing the sheet 30 over the assembly such that the adhesive 32 bonds the sheet 30 to the silicone encapsulant 20 and to the surrounding overmolding 22, as well as optionally to exposed portions of the lead frame or submount 16.
  • the sheet 40 does not extend over any portion of the overmolding 22.
  • the manufacturing sequence can involve adhering the sheet 40 to the light emitting diode package 10 either before or after the overmolding 22 is applied.
  • the sheet 40 can be adhered to the light emitting diode package 10 either before or after the light emitting diode package 10 is mounted to the surface 12 of the substrate 14.
  • the conformable plastic sheet 30, 40 of previous embodiments is replaced by a substantially rigid vinyl, clear acrylic, or other light-transmissive plastic cap 50 shaped and sized to receive the surface mounted light emitting diode package 10 and seal against the surface 12 of the substrate 14.
  • the substantially rigid plastic cap 50 defines a light transmissive plastic layer that is disposed as a unit over an assembly including at least the silicone encapsulant 20 and the light emitting chip 18 to hermetically seal the assembly.
  • an adhesive may be disposed between the plastic cap 50 and the surface mounted light emitting diode package 10, or between the plastic cap 50 and the surface 12 of the substrate 14, or both between the plastic cap 50 and the surface mounted light emitting diode package 10 and between the plastic cap 50 and the surface 12 of the substrate 14.
  • the illustrated plastic cap 50 has a flat top extending over the surface mounted light emitting diode package 10, which advantageously tends to introduce little or no diffraction or refraction of the light. However, it is also contemplated to use a dome-shaped or otherwise-shaped cap.
  • the structure shown in FIGURE 5 is the complete structure.
  • the structure of FIGURE 5 is an intermediate stage of manufacturing, which is followed by overmolding.
  • the overmolding 22 is disposed over at least a portion of the surface 12 of the substrate 14 and over a periphery of the vinyl or acrylic cap 50.
  • the periphery of the plastic cap 50 suitably defines a gasket against which an annular isolation pin 52 (shown in phantom in FIGURE 6) presses during the injection overmolding, potting, or other overmolding process.
  • the annular isolation pin 52 defines a cavity that receives the light emitting diode package 10 during injection overmolding.
  • the annular pin 52 surrounds the light emitting diode package 10, and the periphery of the plastic cap 50 defines a gasket against which the bottom of the annular isolation pin 52 presses to seal off the interior volume of the annular pin 52.
  • the injected overmolding 22 covers the surface 12 of the substrate 14 up to the exterior of the annular pin 52, but does not inject further into the sealed interior volume of the annular pin 52. Accordingly, the overmolding 22 does not cover the light emitting diode package 10, but does extend over an outer periphery of the plastic cap 50 to form a hermetic seal therewith.
  • the periphery of the plastic cap 50 distorts, is cut, or partially melts during the overmolding process to enhance sealing characteristics of the plastic cap 50.
  • the annular pin 52 is removed but the plastic cap 50 remains hermetically sealed with the surrounding overmolding 22. This configuration reduces a likelihood of water or other environmental contaminants ingressing through the opening for the light emitting diode package 10 to penetrate underneath the overmolding 22 (that is, between the overmolding 22 and the surface 12 of the substrate 14).
  • annular gasket that is placed over the periphery of the plastic cap 50.
  • an annular rubber gasket can be placed over the periphery of the plastic cap 50 to mate with the bottom of the annular isolation pin 52 during overmolding.
  • This arrangement advantageously allows the separate annular gasket to be made of rubber or another material selected for good sealing properties respective to the pin 52.
  • the annular gasket is secured with the periphery of the plastic cap 50 before placement over the light emitting diode package 10.
  • the securing can employ an adhesive, or the plastic cap 50 can be assembled with the separate annular gasket without adhesive, for example using ultra-sonic welding.
  • the gasket is installed first, followed by overmolding, followed by bonding of the plastic cap 50 to the portion of the gasket remaining exposed after the overmolding. Such bonding can be by ultrasonic welding, for example.
  • annular means that the annular pin 52 has a central opening in which the light emitting diode package 10 is disposed, or similarly the separate annular gasket if provided has a central opening.
  • annular is not limited to circular cross-sections or circular gaskets, but encompasses other cross-sectional configurations or gasket configurations such as square, rectangular, circular, elliptical, or otherwise-shaped inner perimeters, and square, rectangular, circular, elliptical, or otherwise-shaped outer perimeters. It is contemplated for the inner and outer cross-section perimeters to be differently shaped, such as having a square inner perimeter and a round outer perimeter.
  • FIGURE 6 employs the illustrated substantially rigid plastic cap 50 to form a gasket for sealing off the interior of the isolation pin 52 during overmolding.
  • a flexible or conformal plastic sheet can also be used.
  • the extended plastic sheet 30 of FIGURE 1 could be applied before overmolding such that it adheres directly to the surface 12 of the substrate 14. Then, the substrate is placed into the overmolding die such that the isolation pin 52 seals against a periphery of the vinyl or acrylic sheet 30, in the same way that the substantially rigid plastic cap 50 does in the example of FIGURES 5 and 6.
  • the overmolding then covers and hermetically seals with the periphery of the sheet 30, to form a structure similar to that of FIGURE 6 but with the substantially rigid cap 50 replaced by a conformal sheet extending over the light emitting diode package 10 but under the overmolding 22.
  • a phosphor or phosphor blend can be incorporated on or in the encapsulant, or on or in the vinyl, acrylic, or other plastic sealing layer.
  • Various optical components or features such as microlenses, roughened surfaces, or so forth can be incorporated.
  • the light emitting chip may comprise a plurality of light emitting chips, as for example in a red-green-blue configuration including independently operable red, green, and blue light emitting chips.
  • the lead frame or submount 16 can incorporate various features such as electrical vias, electrostatic discharge (ESD) protection components or circuitry mounted on or integrated monolithically with the lead frame or submount, or so forth.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

L'invention concerne un dispositif d'éclairage illustratif qui comprend une puce électroluminescente ; un agent d'encapsulation en silicone disposé sur la puce électroluminescente ; et une couche acrylique ou de vinyle transmettant la lumière scellant un ensemble comprenant au moins l'agent d'encapsulation en silicone et la puce électroluminescente. Un procédé illustratif de fabrication d'un dispositif d'éclairage comprend les étapes consistant à encapsuler une puce électroluminescente avec un agent d'encapsulation en silicone ; et sceller un ensemble comprenant au moins l'agent d'encapsulation en silicone et la puce électroluminescente en utilisant une couche acrylique ou de vinyle transmettant la lumière. Un procédé illustratif de fabrication d'un dispositif d'éclairage comprend les étapes consistant à encapsuler une puce électroluminescente avec un agent d'encapsulation en silicone ; et sceller un ensemble comprenant au moins l'agent d'encapsulation en silicone et la puce électroluminescente en disposant une couche plastique transmettant la lumière comme unité sur l'ensemble.
PCT/US2008/065308 2007-05-31 2008-05-30 Dispositifs d'éclairage robustes sur le plan environnemental et procédés de fabrication de ceux-ci WO2008151009A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US93239407P 2007-05-31 2007-05-31
US60/932,394 2007-05-31
US12/129,925 US7915061B2 (en) 2007-05-31 2008-05-30 Environmentally robust lighting devices and methods of manufacturing same
US12/129,925 2008-05-30

Publications (1)

Publication Number Publication Date
WO2008151009A1 true WO2008151009A1 (fr) 2008-12-11

Family

ID=40087115

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2008/065308 WO2008151009A1 (fr) 2007-05-31 2008-05-30 Dispositifs d'éclairage robustes sur le plan environnemental et procédés de fabrication de ceux-ci

Country Status (2)

Country Link
US (1) US7915061B2 (fr)
WO (1) WO2008151009A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8525397B2 (en) 2009-09-11 2013-09-03 Koninklijke Philips N.V. OLED devices with protection cover

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101577300A (zh) * 2008-05-08 2009-11-11 先进开发光电股份有限公司 发光二极管及其封装方法
US8697458B2 (en) 2009-04-22 2014-04-15 Shat-R-Shield, Inc. Silicone coated light-emitting diode
EP2422369A4 (fr) * 2009-04-22 2014-12-24 Shat R Shield Inc Diode émettant de la lumière, revêtue de silicone
US8575646B1 (en) * 2009-06-11 2013-11-05 Applied Lighting Solutions, LLC Creating an LED package with optical elements by using controlled wetting
US8835199B2 (en) * 2010-07-28 2014-09-16 GE Lighting Solutions, LLC Phosphor suspended in silicone, molded/formed and used in a remote phosphor configuration
US8974077B2 (en) 2012-07-30 2015-03-10 Ultravision Technologies, Llc Heat sink for LED light source
KR102019499B1 (ko) * 2012-11-05 2019-09-06 엘지이노텍 주식회사 발광 소자 및 이를 구비한 조명 시스템
US10217387B2 (en) 2013-03-15 2019-02-26 General Led Opco, Llc LED light engine for signage
US9626884B2 (en) 2013-03-15 2017-04-18 General Led, Inc. LED light engine for signage
US9464780B2 (en) 2013-03-15 2016-10-11 General Led, Inc. LED light engine for signage
US9195281B2 (en) 2013-12-31 2015-11-24 Ultravision Technologies, Llc System and method for a modular multi-panel display
US10443820B2 (en) 2014-12-09 2019-10-15 Current Lighting Solutions, Llc Plastic LED fixture housing with outer frame

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040241894A1 (en) * 2000-07-21 2004-12-02 Yoshifumi Nagai Light emitting device, display apparatus with an array of light emitting devices, and display apparatus method of manufacture
US20060006793A1 (en) * 2004-07-12 2006-01-12 Baroky Tajul A Deep ultraviolet used to produce white light
US20060060867A1 (en) * 2004-09-09 2006-03-23 Toyoda Gosei Co., Ltd. Light emitting device
US20060099449A1 (en) * 2004-11-09 2006-05-11 Kabushiki Kaisha Toshiba Light-emitting device

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4667481A (en) * 1984-09-11 1987-05-26 Hitachi Plant Engineering & Construction Co., Ltd. Method of and apparatus for emitting light in ice
US5890794A (en) * 1996-04-03 1999-04-06 Abtahi; Homayoon Lighting units
DE19918370B4 (de) * 1999-04-22 2006-06-08 Osram Opto Semiconductors Gmbh LED-Weißlichtquelle mit Linse
JP2001306002A (ja) * 2000-04-26 2001-11-02 First:Kk 帯状発光体
DE10020465A1 (de) * 2000-04-26 2001-11-08 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement mit Lumineszenzkonversionselement
JP3948650B2 (ja) * 2001-10-09 2007-07-25 アバゴ・テクノロジーズ・イーシービーユー・アイピー(シンガポール)プライベート・リミテッド 発光ダイオード及びその製造方法
TW558775B (en) * 2002-06-27 2003-10-21 Solidlite Corp Package of compound type LED
US7224000B2 (en) * 2002-08-30 2007-05-29 Lumination, Llc Light emitting diode component
US6903380B2 (en) * 2003-04-11 2005-06-07 Weldon Technologies, Inc. High power light emitting diode
US6911731B2 (en) * 2003-05-14 2005-06-28 Jiahn-Chang Wu Solderless connection in LED module
JP2005223112A (ja) * 2004-02-05 2005-08-18 Citizen Electronics Co Ltd 表面実装型発光ダイオード
US7326583B2 (en) * 2004-03-31 2008-02-05 Cree, Inc. Methods for packaging of a semiconductor light emitting device
US7517728B2 (en) * 2004-03-31 2009-04-14 Cree, Inc. Semiconductor light emitting devices including a luminescent conversion element
KR100674827B1 (ko) * 2004-07-28 2007-01-25 삼성전기주식회사 백라이트 유니트용 led 패키지
JP4756841B2 (ja) * 2004-09-29 2011-08-24 スタンレー電気株式会社 半導体発光装置の製造方法
US8816369B2 (en) * 2004-10-29 2014-08-26 Led Engin, Inc. LED packages with mushroom shaped lenses and methods of manufacturing LED light-emitting devices
KR100819883B1 (ko) * 2006-02-17 2008-04-07 삼성전자주식회사 발광소자 패키지 및 그 제조방법
US7804147B2 (en) * 2006-07-31 2010-09-28 Cree, Inc. Light emitting diode package element with internal meniscus for bubble free lens placement
TWI418054B (zh) * 2006-08-08 2013-12-01 Lg Electronics Inc 發光裝置封裝與製造此封裝之方法
KR100828900B1 (ko) * 2006-09-04 2008-05-09 엘지이노텍 주식회사 발광 다이오드 패키지 및 그 제조방법
US7485480B2 (en) * 2006-09-21 2009-02-03 Harvatek Corporation Method of manufacturing high power light-emitting device package and structure thereof
KR100947400B1 (ko) * 2007-12-21 2010-03-12 삼성전기주식회사 Led 패키지의 몰딩부재를 형성하기 위한 몰드 및 이를 이용한 led 패키지의 제조방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040241894A1 (en) * 2000-07-21 2004-12-02 Yoshifumi Nagai Light emitting device, display apparatus with an array of light emitting devices, and display apparatus method of manufacture
US20060006793A1 (en) * 2004-07-12 2006-01-12 Baroky Tajul A Deep ultraviolet used to produce white light
US20060060867A1 (en) * 2004-09-09 2006-03-23 Toyoda Gosei Co., Ltd. Light emitting device
US20060099449A1 (en) * 2004-11-09 2006-05-11 Kabushiki Kaisha Toshiba Light-emitting device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8525397B2 (en) 2009-09-11 2013-09-03 Koninklijke Philips N.V. OLED devices with protection cover

Also Published As

Publication number Publication date
US20080296607A1 (en) 2008-12-04
US7915061B2 (en) 2011-03-29

Similar Documents

Publication Publication Date Title
US7915061B2 (en) Environmentally robust lighting devices and methods of manufacturing same
US6881980B1 (en) Package structure of light emitting diode
US7355284B2 (en) Semiconductor light emitting devices including flexible film having therein an optical element
US7633055B2 (en) Sealed light emitting diode assemblies including annular gaskets and methods of making same
KR101511816B1 (ko) 적어도 두 개의 발광 반도체 소자를 포함한 장치 및 그러한 장치의 제조 방법
KR20060049072A (ko) 발광 다이오드 램프
JP2002261333A (ja) 発光装置
US8212272B2 (en) Light-emitting diode
JP2005019110A (ja) 埋込灯
KR101575366B1 (ko) 발광소자 패키지
JPWO2018003027A1 (ja) 表示装置および表示装置の製造方法
JP2006221067A (ja) 表示デバイス
KR101647512B1 (ko) 발광소자 패키지 및 그 제조방법
US11251346B2 (en) Light emitting diode package structure
KR20150049669A (ko) 발광 장치
TW201316565A (zh) 具膠牆的發光二極體封裝方法
KR20050090928A (ko) 색 필름 및 이를 이용한 발광 다이오드 모듈
CN213845309U (zh) 一种发光二极管封装结构
TWM544123U (zh) 發光二極體封裝結構
TWI619269B (zh) 發光二極體封裝結構
KR102355110B1 (ko) 발광 소자 패키지 및 발광 소자 패키지 모듈
KR20200118733A (ko) 조명 모듈 및 이를 구비한 조명장치
TW201314640A (zh) 發光二極體顯示板及其封裝方法
KR20080061562A (ko) 발광 다이오드 램프 및 그것을 제조하는 방법
KR20050090707A (ko) 칩형 발광다이오드

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08769891

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08769891

Country of ref document: EP

Kind code of ref document: A1