WO2008149937A1 - デバイスウエハ用の研磨パッド及び研磨方法 - Google Patents

デバイスウエハ用の研磨パッド及び研磨方法 Download PDF

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Publication number
WO2008149937A1
WO2008149937A1 PCT/JP2008/060374 JP2008060374W WO2008149937A1 WO 2008149937 A1 WO2008149937 A1 WO 2008149937A1 JP 2008060374 W JP2008060374 W JP 2008060374W WO 2008149937 A1 WO2008149937 A1 WO 2008149937A1
Authority
WO
WIPO (PCT)
Prior art keywords
device wafer
electrolytic solution
solution storage
pad
sqrt
Prior art date
Application number
PCT/JP2008/060374
Other languages
English (en)
French (fr)
Inventor
Daisuke Abe
Shigeru Tominaga
Seiichi Kondo
Original Assignee
Roki Techno Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Roki Techno Co., Ltd. filed Critical Roki Techno Co., Ltd.
Priority to JP2009517897A priority Critical patent/JPWO2008149937A1/ja
Publication of WO2008149937A1 publication Critical patent/WO2008149937A1/ja

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
    • B23H5/00—Combined machining
    • B23H5/06—Electrochemical machining combined with mechanical working, e.g. grinding or honing
    • B23H5/08—Electrolytic grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H01L21/32125—Planarisation by chemical mechanical polishing [CMP] by simultaneously passing an electrical current, i.e. electrochemical mechanical polishing, e.g. ECMP

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

　デバイスウエハの導電体層のウエハ面内均一性を改善し、長期間安定した電気化学的機械的研磨ができるデバイスウエハ用の研磨パッドを提供する。 　内径側から外径側までの全ての電解液収容部Ｆを、電解液収容部Ｆの開口部の径方向の長さをｗ（ｍｍ）、電解液収容部Ｆの最大設置半径をＲ（ｍｍ）とした場合に、４５／ＳＱＲＴ（Ｒ）＜ｗ＜７３／ＳＱＲＴ（Ｒ）の関係式を満足するように、研磨パッド６０に配置する。
PCT/JP2008/060374 2007-06-05 2008-06-05 デバイスウエハ用の研磨パッド及び研磨方法 WO2008149937A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009517897A JPWO2008149937A1 (ja) 2007-06-05 2008-06-05 デバイスウエハ用の研磨パッド及び研磨方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007149808 2007-06-05
JP2007-149808 2007-06-05

Publications (1)

Publication Number Publication Date
WO2008149937A1 true WO2008149937A1 (ja) 2008-12-11

Family

ID=40093748

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/060374 WO2008149937A1 (ja) 2007-06-05 2008-06-05 デバイスウエハ用の研磨パッド及び研磨方法

Country Status (2)

Country Link
JP (1) JPWO2008149937A1 (ja)
WO (1) WO2008149937A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016001705A (ja) * 2014-06-12 2016-01-07 信越半導体株式会社 ウェーハの研磨方法
CN110497306A (zh) * 2019-08-20 2019-11-26 沈小牛 一种半导体材料加工用化学抛光机

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006062047A (ja) * 2004-08-27 2006-03-09 Ebara Corp 研磨装置および研磨方法
WO2007061064A1 (ja) * 2005-11-28 2007-05-31 Roki Techno Co., Ltd. デバイスウエハ用の研磨パッド

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006062047A (ja) * 2004-08-27 2006-03-09 Ebara Corp 研磨装置および研磨方法
WO2007061064A1 (ja) * 2005-11-28 2007-05-31 Roki Techno Co., Ltd. デバイスウエハ用の研磨パッド

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016001705A (ja) * 2014-06-12 2016-01-07 信越半導体株式会社 ウェーハの研磨方法
CN110497306A (zh) * 2019-08-20 2019-11-26 沈小牛 一种半导体材料加工用化学抛光机

Also Published As

Publication number Publication date
JPWO2008149937A1 (ja) 2010-08-26

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