WO2008139897A1 - Semiconductor device manufacturing method and semiconductor device - Google Patents

Semiconductor device manufacturing method and semiconductor device Download PDF

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Publication number
WO2008139897A1
WO2008139897A1 PCT/JP2008/058098 JP2008058098W WO2008139897A1 WO 2008139897 A1 WO2008139897 A1 WO 2008139897A1 JP 2008058098 W JP2008058098 W JP 2008058098W WO 2008139897 A1 WO2008139897 A1 WO 2008139897A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor device
manufacturing
silicon substrate
arranging
trench
Prior art date
Application number
PCT/JP2008/058098
Other languages
French (fr)
Japanese (ja)
Inventor
Masaru Takaishi
Original Assignee
Rohm Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co., Ltd. filed Critical Rohm Co., Ltd.
Priority to JP2009514084A priority Critical patent/JP5443978B2/en
Publication of WO2008139897A1 publication Critical patent/WO2008139897A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/66719—With a step of forming an insulating sidewall spacer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/66727—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the source electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

Provided is a semiconductor device manufacturing method wherein complication of manufacturing process is suppressed. The method for manufacturing a semiconductor device (1) is provided with a step of forming trenches (2a, 2b) on a silicon substrate (2) so that the width (W1) of the trench (2a) is larger than the width (W2) of the trench (2b); a step of arranging electrodes (3, 4); a step of arranging an oxide film (14 (14a)); a step of removing the oxide film (14 (14a)) so that at least a part of the upper surfaces of the silicon substrate (2) and the electrode (3) are exposed and that the upper surface of the electrode (4) is not exposed; and a step of arranging a wiring layer (6) on the upper surface side of the silicon substrate (2).
PCT/JP2008/058098 2007-04-27 2008-04-25 Semiconductor device manufacturing method and semiconductor device WO2008139897A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009514084A JP5443978B2 (en) 2007-04-27 2008-04-25 Semiconductor device manufacturing method and semiconductor device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007118928 2007-04-27
JP2007-118928 2007-04-27

Publications (1)

Publication Number Publication Date
WO2008139897A1 true WO2008139897A1 (en) 2008-11-20

Family

ID=40002113

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/058098 WO2008139897A1 (en) 2007-04-27 2008-04-25 Semiconductor device manufacturing method and semiconductor device

Country Status (3)

Country Link
JP (1) JP5443978B2 (en)
TW (1) TW200910429A (en)
WO (1) WO2008139897A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104900703A (en) * 2015-05-12 2015-09-09 上海格瑞宝电子有限公司 Trench MOSFET terminal structure, trench MOSFET device and manufacture method thereof
EP4246595A4 (en) * 2020-11-12 2024-05-29 Chongqing Alpha and Omega Semiconductor Limited Trench power device and manufacturing method therefor

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002373988A (en) * 2001-06-14 2002-12-26 Rohm Co Ltd Semiconductor device and manufacturing method therefor
JP2004179277A (en) * 2002-11-26 2004-06-24 New Japan Radio Co Ltd Method of manufacturing semiconductor device
JP2004207476A (en) * 2002-12-25 2004-07-22 Mitsubishi Electric Corp Power semiconductor device, and method for manufacturing the same
JP2004311547A (en) * 2003-04-03 2004-11-04 Seiko Instruments Inc Method of manufacturing vertical mos transistor
JP2005191487A (en) * 2003-12-26 2005-07-14 Seiko Instruments Inc Semiconductor device and manufacturing method for the same
JP2006100404A (en) * 2004-09-28 2006-04-13 Nec Electronics Corp Semiconductor device and its manufacturing method
JP2006100317A (en) * 2004-09-28 2006-04-13 Nec Electronics Corp Semiconductor device

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002373988A (en) * 2001-06-14 2002-12-26 Rohm Co Ltd Semiconductor device and manufacturing method therefor
JP2004179277A (en) * 2002-11-26 2004-06-24 New Japan Radio Co Ltd Method of manufacturing semiconductor device
JP2004207476A (en) * 2002-12-25 2004-07-22 Mitsubishi Electric Corp Power semiconductor device, and method for manufacturing the same
JP2004311547A (en) * 2003-04-03 2004-11-04 Seiko Instruments Inc Method of manufacturing vertical mos transistor
JP2005191487A (en) * 2003-12-26 2005-07-14 Seiko Instruments Inc Semiconductor device and manufacturing method for the same
JP2006100404A (en) * 2004-09-28 2006-04-13 Nec Electronics Corp Semiconductor device and its manufacturing method
JP2006100317A (en) * 2004-09-28 2006-04-13 Nec Electronics Corp Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104900703A (en) * 2015-05-12 2015-09-09 上海格瑞宝电子有限公司 Trench MOSFET terminal structure, trench MOSFET device and manufacture method thereof
EP4246595A4 (en) * 2020-11-12 2024-05-29 Chongqing Alpha and Omega Semiconductor Limited Trench power device and manufacturing method therefor

Also Published As

Publication number Publication date
TW200910429A (en) 2009-03-01
JP5443978B2 (en) 2014-03-19
JPWO2008139897A1 (en) 2010-07-29

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