WO2008133183A1 - Capacitance type acceleration sensor - Google Patents

Capacitance type acceleration sensor Download PDF

Info

Publication number
WO2008133183A1
WO2008133183A1 PCT/JP2008/057519 JP2008057519W WO2008133183A1 WO 2008133183 A1 WO2008133183 A1 WO 2008133183A1 JP 2008057519 W JP2008057519 W JP 2008057519W WO 2008133183 A1 WO2008133183 A1 WO 2008133183A1
Authority
WO
WIPO (PCT)
Prior art keywords
pair
glass substrate
weight section
acceleration sensor
capacitance type
Prior art date
Application number
PCT/JP2008/057519
Other languages
French (fr)
Japanese (ja)
Inventor
Manabu Tamura
Tsuyoshi Sugawara
Chisato Iwasaki
Original Assignee
Alps Electric Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alps Electric Co., Ltd. filed Critical Alps Electric Co., Ltd.
Publication of WO2008133183A1 publication Critical patent/WO2008133183A1/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/18—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration in two or more dimensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
    • G01P2015/0825—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass
    • G01P2015/0831—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass the mass being of the paddle type having the pivot axis between the longitudinal ends of the mass, e.g. see-saw configuration

Abstract

A capacitance type acceleration sensor that is excellent in the linearity of sensitivity and has a simple structure. A pair of fixed electrodes (12) is formed on one main surface of a glass substrate (11). The fixed electrodes (12) of the pair are arranged at positions facing a movable electrode. A silicon substrate (13) is joined to the one main surface of the glass substrate (11), and the silicon substrate (13) has a weight section (13a), which is the movable electrode, and a pair of beam sections (13b) for supporting opposite ends of the weight section (13a). The beam sections (13b) are arranged at positions that are near the bottom surface of the weight section (13a) and are away from the center or an end of the weight section (13a). Further, the pair of fixed electrodes (12) is located, in a plan view, at a position symmetrical with respect to the beam sections (13b). A glass substrate (14) is joined to the silicon substrate (13) on the side opposite to the glass substrate (11).
PCT/JP2008/057519 2007-04-20 2008-04-17 Capacitance type acceleration sensor WO2008133183A1 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007-111311 2007-04-20
JP2007111311 2007-04-20
JP2007-230698 2007-09-05
JP2007230698 2007-09-05

Publications (1)

Publication Number Publication Date
WO2008133183A1 true WO2008133183A1 (en) 2008-11-06

Family

ID=39925639

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/057519 WO2008133183A1 (en) 2007-04-20 2008-04-17 Capacitance type acceleration sensor

Country Status (1)

Country Link
WO (1) WO2008133183A1 (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010055716A1 (en) * 2008-11-13 2010-05-20 三菱電機株式会社 Acceleration sensor
EP2479579A1 (en) * 2011-01-24 2012-07-25 Freescale Semiconductor, Inc. Are Mems sensor with dual proof masses
JP2014510932A (en) * 2011-04-13 2014-05-01 ノースロップ グラマン ガイダンス アンド エレクトロニクス カンパニー インコーポレイテッド Accelerometer system and method
JP2014174165A (en) * 2013-03-05 2014-09-22 Analog Devices Inc Tilt mode accelerometer with improved offset and noise performance
WO2014156119A1 (en) * 2013-03-27 2014-10-02 株式会社デンソー Physical quantity sensor
JP2014190806A (en) * 2013-03-27 2014-10-06 Denso Corp Capacitive physical quantity sensor
JP2014190808A (en) * 2013-03-27 2014-10-06 Denso Corp Acceleration sensor
JP2014209082A (en) * 2013-03-27 2014-11-06 株式会社デンソー Acceleration sensor
CN104459200A (en) * 2013-09-18 2015-03-25 上海矽睿科技有限公司 Three-axis accelerometer
US9470709B2 (en) 2013-01-28 2016-10-18 Analog Devices, Inc. Teeter totter accelerometer with unbalanced mass
US10073113B2 (en) 2014-12-22 2018-09-11 Analog Devices, Inc. Silicon-based MEMS devices including wells embedded with high density metal
US10078098B2 (en) 2015-06-23 2018-09-18 Analog Devices, Inc. Z axis accelerometer design with offset compensation

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09189716A (en) * 1995-11-07 1997-07-22 Temic Telefunken Microelectron Gmbh Microminiature mechanical acceleration sensor
JP2005529336A (en) * 2002-06-11 2005-09-29 コンティ テミック マイクロエレクトロニック ゲゼルシャフト ミット ベシュレンクテル ハフツング Multi-axis monolithic acceleration sensor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09189716A (en) * 1995-11-07 1997-07-22 Temic Telefunken Microelectron Gmbh Microminiature mechanical acceleration sensor
JP2005529336A (en) * 2002-06-11 2005-09-29 コンティ テミック マイクロエレクトロニック ゲゼルシャフト ミット ベシュレンクテル ハフツング Multi-axis monolithic acceleration sensor

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010055716A1 (en) * 2008-11-13 2010-05-20 三菱電機株式会社 Acceleration sensor
EP2479579A1 (en) * 2011-01-24 2012-07-25 Freescale Semiconductor, Inc. Are Mems sensor with dual proof masses
CN102608354A (en) * 2011-01-24 2012-07-25 飞思卡尔半导体公司 MEMS sensor with dual proof masses
JP2012154919A (en) * 2011-01-24 2012-08-16 Freescale Semiconductor Inc Mems sensor having dual proof mass
US8539836B2 (en) 2011-01-24 2013-09-24 Freescale Semiconductor, Inc. MEMS sensor with dual proof masses
JP2014510932A (en) * 2011-04-13 2014-05-01 ノースロップ グラマン ガイダンス アンド エレクトロニクス カンパニー インコーポレイテッド Accelerometer system and method
US9470709B2 (en) 2013-01-28 2016-10-18 Analog Devices, Inc. Teeter totter accelerometer with unbalanced mass
US9297825B2 (en) 2013-03-05 2016-03-29 Analog Devices, Inc. Tilt mode accelerometer with improved offset and noise performance
JP2014174165A (en) * 2013-03-05 2014-09-22 Analog Devices Inc Tilt mode accelerometer with improved offset and noise performance
JP2014190806A (en) * 2013-03-27 2014-10-06 Denso Corp Capacitive physical quantity sensor
JP2014190808A (en) * 2013-03-27 2014-10-06 Denso Corp Acceleration sensor
JP2014209082A (en) * 2013-03-27 2014-11-06 株式会社デンソー Acceleration sensor
WO2014156119A1 (en) * 2013-03-27 2014-10-02 株式会社デンソー Physical quantity sensor
CN104459200A (en) * 2013-09-18 2015-03-25 上海矽睿科技有限公司 Three-axis accelerometer
US10073113B2 (en) 2014-12-22 2018-09-11 Analog Devices, Inc. Silicon-based MEMS devices including wells embedded with high density metal
US10078098B2 (en) 2015-06-23 2018-09-18 Analog Devices, Inc. Z axis accelerometer design with offset compensation

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