WO2008132508A3 - Bipolar transistor drivers - Google Patents

Bipolar transistor drivers Download PDF

Info

Publication number
WO2008132508A3
WO2008132508A3 PCT/GB2008/050299 GB2008050299W WO2008132508A3 WO 2008132508 A3 WO2008132508 A3 WO 2008132508A3 GB 2008050299 W GB2008050299 W GB 2008050299W WO 2008132508 A3 WO2008132508 A3 WO 2008132508A3
Authority
WO
WIPO (PCT)
Prior art keywords
transistor
base
current
bjt
saturation
Prior art date
Application number
PCT/GB2008/050299
Other languages
French (fr)
Other versions
WO2008132508A2 (en
Inventor
Paul Ryan
Russell Jacques
Original Assignee
Cambridge Semiconductor Ltd
Paul Ryan
Russell Jacques
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cambridge Semiconductor Ltd, Paul Ryan, Russell Jacques filed Critical Cambridge Semiconductor Ltd
Publication of WO2008132508A2 publication Critical patent/WO2008132508A2/en
Publication of WO2008132508A3 publication Critical patent/WO2008132508A3/en

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/0406—Modifications for accelerating switching in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/042—Modifications for accelerating switching by feedback from the output circuit to the control circuit
    • H03K17/04213—Modifications for accelerating switching by feedback from the output circuit to the control circuit in bipolar transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/042—Modifications for accelerating switching by feedback from the output circuit to the control circuit
    • H03K17/0422—Anti-saturation measures
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0828—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/168—Modifications for eliminating interference voltages or currents in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6877—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the control circuit comprising active elements different from those used in the output circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/689—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit
    • H03K17/691—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit using transformer coupling
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0036—Means reducing energy consumption

Abstract

We describe a methods of controlling the drive to a BJT or IGBT transistor to control the saturation of said transistor to achieve fast turn-off. An embodiment of the method comprises determining a quantity of charge in the transistor for a combination of collector current and a time for which said collector current flows, and delivering a pulse of current or voltage to a control terminal of said BJT or IGBT transistor such that a total quantity of charge delivered to a base of said BJT or to an internal base of said IGBT in said pulse of base or gate current or voltage is sufficient to maintain said collector current for said time and to sustain said transistor in saturation or quasi - saturation up to or after the end of said base current or gate voltage pulse until the end of said time.
PCT/GB2008/050299 2007-04-27 2008-04-25 Bipolar transistor drivers WO2008132508A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0708200A GB2448759A (en) 2007-04-27 2007-04-27 Turn-off control for a bipolar transistor
GB0708200.1 2007-04-27

Publications (2)

Publication Number Publication Date
WO2008132508A2 WO2008132508A2 (en) 2008-11-06
WO2008132508A3 true WO2008132508A3 (en) 2008-12-24

Family

ID=38170819

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/GB2008/050299 WO2008132508A2 (en) 2007-04-27 2008-04-25 Bipolar transistor drivers

Country Status (2)

Country Link
GB (1) GB2448759A (en)
WO (1) WO2008132508A2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9621050B2 (en) 2013-05-31 2017-04-11 Power Integrations, Inc. Storage time control
EP3072026B1 (en) * 2013-11-22 2019-07-31 NXP USA, Inc. Method and apparatus for controlling an igbt device
US9525333B1 (en) 2015-06-05 2016-12-20 Power Integrations Limited BJT driver with dynamic adjustment of storage time versus input line voltage variations
GB2563686A (en) * 2017-06-23 2018-12-26 Nidec Control Techniques Ltd Method and apparatus for monitoring a semiconductor switch
DE102019206688A1 (en) * 2019-05-09 2020-11-12 Robert Bosch Gmbh Protection device and control circuit for a semiconductor switch and method for controlling a semiconductor switch
GB2602142A (en) * 2020-12-20 2022-06-22 Search For The Next Ltd Circuits including high power transistors

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1983000590A1 (en) * 1981-08-06 1983-02-17 Gould Inc High speed transistor switching circuit
FR2552602A1 (en) * 1983-09-27 1985-03-29 Telefunken Electronic Gmbh Power transistor control circuit for engine electronic ignition
US4749876A (en) * 1986-12-22 1988-06-07 Eaton Corporation Universal power transistor base drive control unit
EP0373240A1 (en) * 1988-12-13 1990-06-20 Siemens Aktiengesellschaft Self regulating driver circuit with saturation level regulation for the base current of a power transistor

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2852943C3 (en) * 1978-12-07 1981-09-10 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Arrangement with a delayed semiconductor switch
US4751403A (en) * 1984-06-15 1988-06-14 Hitachi, Ltd. Transistor driving circuit and circuit controlling method
WO2000046924A1 (en) * 1999-02-05 2000-08-10 Koninklijke Philips Electronics N.V. Driving a switching transistor
DE602004013718D1 (en) * 2004-03-31 2008-06-26 St Microelectronics Srl Emitter circuit control circuit for controlling the storage time

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1983000590A1 (en) * 1981-08-06 1983-02-17 Gould Inc High speed transistor switching circuit
FR2552602A1 (en) * 1983-09-27 1985-03-29 Telefunken Electronic Gmbh Power transistor control circuit for engine electronic ignition
US4749876A (en) * 1986-12-22 1988-06-07 Eaton Corporation Universal power transistor base drive control unit
EP0373240A1 (en) * 1988-12-13 1990-06-20 Siemens Aktiengesellschaft Self regulating driver circuit with saturation level regulation for the base current of a power transistor

Also Published As

Publication number Publication date
GB0708200D0 (en) 2007-06-06
GB2448759A (en) 2008-10-29
WO2008132508A2 (en) 2008-11-06

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