WO2008132445A2 - Solar cell - Google Patents
Solar cell Download PDFInfo
- Publication number
- WO2008132445A2 WO2008132445A2 PCT/GB2008/001436 GB2008001436W WO2008132445A2 WO 2008132445 A2 WO2008132445 A2 WO 2008132445A2 GB 2008001436 W GB2008001436 W GB 2008001436W WO 2008132445 A2 WO2008132445 A2 WO 2008132445A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- previous
- thermovoltaic
- electromagnetic radiation
- current
- photovoltaic
- Prior art date
Links
- 230000005855 radiation Effects 0.000 claims abstract description 29
- 230000005670 electromagnetic radiation Effects 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 9
- 210000004027 cell Anatomy 0.000 claims description 29
- 239000010410 layer Substances 0.000 claims description 29
- 239000000463 material Substances 0.000 claims description 24
- 239000004065 semiconductor Substances 0.000 claims description 17
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical class [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 14
- 239000006096 absorbing agent Substances 0.000 claims description 6
- 229910002804 graphite Inorganic materials 0.000 claims description 6
- 239000010439 graphite Substances 0.000 claims description 6
- 239000011241 protective layer Substances 0.000 claims description 6
- 239000011368 organic material Substances 0.000 claims description 5
- 230000004907 flux Effects 0.000 claims description 4
- 229910010272 inorganic material Inorganic materials 0.000 claims description 4
- 239000011147 inorganic material Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 229910003327 LiNbO3 Inorganic materials 0.000 claims description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 3
- 239000002134 carbon nanofiber Substances 0.000 claims description 3
- 239000002041 carbon nanotube Substances 0.000 claims description 3
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 3
- 238000009826 distribution Methods 0.000 claims description 3
- 239000010408 film Substances 0.000 claims description 3
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 claims description 3
- 229910021389 graphene Inorganic materials 0.000 claims description 3
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical class C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- -1 HOPG Chemical compound 0.000 claims description 2
- 239000006117 anti-reflective coating Substances 0.000 claims description 2
- 239000000919 ceramic Substances 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 2
- 239000002070 nanowire Substances 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 2
- 239000002096 quantum dot Substances 0.000 claims description 2
- 238000003860 storage Methods 0.000 claims description 2
- 230000000007 visual effect Effects 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 claims description 2
- 229910002370 SrTiO3 Inorganic materials 0.000 claims 1
- 239000012212 insulator Substances 0.000 claims 1
- 238000001228 spectrum Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 230000008901 benefit Effects 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000000975 dye Substances 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- 238000002211 ultraviolet spectrum Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 150000004696 coordination complex Chemical class 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- 150000004694 iodide salts Chemical class 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000005676 thermoelectric effect Effects 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
- 208000016261 weight loss Diseases 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/052—Cooling means directly associated or integrated with the PV cell, e.g. integrated Peltier elements for active cooling or heat sinks directly associated with the PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/052—Cooling means directly associated or integrated with the PV cell, e.g. integrated Peltier elements for active cooling or heat sinks directly associated with the PV cells
- H01L31/0521—Cooling means directly associated or integrated with the PV cell, e.g. integrated Peltier elements for active cooling or heat sinks directly associated with the PV cells using a gaseous or a liquid coolant, e.g. air flow ventilation, water circulation
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S10/00—PV power plants; Combinations of PV energy systems with other systems for the generation of electric power
- H02S10/10—PV power plants; Combinations of PV energy systems with other systems for the generation of electric power including a supplementary source of electric power, e.g. hybrid diesel-PV energy systems
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/13—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the heat-exchanging means at the junction
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Definitions
- the present invention relates to a solar cell for generating electricity.
- Solar cells are used to convert solar radiation into electrical energy.
- the solar spectrum can be approximated to a satisfactory degree by a black-body spectrum with a corresponding temperature of about 6500 K as shown in figure 1.
- Absorption and scattering by the ozone and water vapour in the Earth's atmosphere leads to substantial decreases in the ultra violet (UV) and infrared (IR) parts of the spectrum reaching sea level .
- UV ultra violet
- IR infrared
- PV cells are typically at best 20% to 25% efficient (with respect to the total amount of available energy) but this may decrease as the operating temperature of the PV cell increases.
- PV elements typically utilise the visible and near-UV spectrum dependent on the particular material used in their construction. However, this part of the spectrum comprises only about 43% of the energy present in the entire solar spectrum shown in figure 1. Roughly 49% of the solar spectrum is made up from the near infrared (NIR) region for which PV elements are not generally optimised. The effect of NIR and IR radiation on a PV element that cannot use these wavelengths is usually to simply heat it up, which further reduces electrical conversion efficiency as PV elements are more efficient at cooler temperatures.
- Thermovoltaic (TV) elements also known as thermoelectric or Seebeck elements) use a temperature gradient to generate a current. Solar radiation may be used to develop this temperature gradient. However, TV elements are not very efficient when low temperature gradients are used.
- PV element i.e. cool enough to maintain a useable efficiency
- an apparatus for converting electromagnetic radiation into an electrical current comprises a photovoltaic element and a thermovoltaic element arranged to absorb a portion of the incident radiation before the incident radiation reaches the photovoltaic element.
- the PV element utilises predominantly the visible and near-UV band of the incident radiation and the TV element utilises predominantly the IR and NIR region with the added benefit that because the IR and NIR wavelengths may be effectively filtered from the incident radiation before reaching the PV element, the PV element may be kept cooler (and therefore run more efficiently) than if it were exposed directly to the full wavelength range.
- the TV element hot junction side can be kept at a much higher temperature without affecting the efficiency of the PV element. This also improves thermal management of the apparatus.
- thermovoltaic element may be separated from the photovoltaic element. This further keeps the PV element cooler.
- thermovoltaic element may comprise a hot junction.
- thermovoltaic element may further comprise a cold junction.
- thermovoltaic element may further comprise a heat sink for cooling the cold junction.
- the heat sink or heat radiator enables a higher temperature gradient by keeping the cold junction closer to ambient temperature .
- thermovoltaic element may further comprise an infrared absorber. This further increases the temperature of the TV element and further filters out IR and
- the infrared absorber may be selected from the group consisting of CuY 1 - X Ca x O 2 , Al x O, LiNbO 3 ,
- thermovoltaic element may be substantially transparent in the visual and/or UV wavelength regions. This allows more of the shorter wavelengths (or higher energies) to reach the PV element.
- thermovoltaic element may further comprise one or more substantially transparent electrodes.
- the electrodes may be transparent at least in the visible and/or UV wavelength range so that they do not block useful radiation from reaching the PV element.
- the one or more substantially transparent electrodes may be indium tin oxide (ITO) .
- ITO is a suitable transparent conductor but other transparent conductors may be used within the TV or PV elements to provide electrical contacts.
- Transparent electrodes may be applied across the face of layers in the solar cell rather than around the periphery leading to a simpler construction.
- the solar cell may further comprise a thermal insulating layer between the thermovoltaic element and the photovoltaic element.
- the thermal insulating layer may be a vacuum or an airgap.
- the photovoltaic element may further comprise a heat sink. This heat sink or heat radiator may be used to further cool the PV element.
- the solar cell may further comprise a protective layer. This protective layer may be used to protect the solar cell from environmental damage or other physical damage.
- the protective layer may be a transparent or semi-transparent material such as glass or a plastics material and may also be coloured or otherwise filter out particular wavelengths.
- the solar cell may further comprise an insulating layer between the protective layer and the thermovoltaic layer.
- the first current may be arranged in parallel or in series with the second current.
- a higher output current may be achieved and in series a higher voltage may be achieved.
- the thermovoltaic element comprises a p-n junction.
- the PV element may also comprise one or more p-n junctions .
- thermovoltaic element may comprise an array of quantum dots, nanowires and/or quantum wells. These structures may combine the required semiconductor properties and IR absorption.
- the apparatus may be a solar cell.
- the photovoltaic element may comprise one or more materials selected from the group consisting of: single-crystalline silicon, poly-crystalline silicon, thin film silicon, amorphous silicon, gallium arsenide, ceramic- based semiconductors, polymeric materials, polymeric hybrid materials, organic material, carbon nanotubes, graphite, Highly ordered pyrolytic graphite, HOPG, graphene and carbon nanofibers and inorganic material.
- the complete apparatus may be made flexible as well making it suitable for many "building integrated photovoltaic" (BIPV) applications.
- the portion of the incident radiation absorbed by the thermovoltaic element has a longer wavelength than a substantial part of the incident radiation not absorbed. At least some of the higher wavelengths may be filtered out by the TV element.
- thermovoltaic element generating a first current such that a portion of the electromagnetic radiation is absorbed by the thermovoltaic element; and directing the remainder of the flux of electromagnetic radiation on to a photovoltaic element generating a second current.
- the portion of the electromagnetic radiation absorbed by the thermovoltaic element has a longer wavelength than a substantial part of the electromagnetic radiation not absorbed. The portion that is not absorbed may then be absorbed by the photovoltaic element to generated the second current.
- the photovoltaic element may be maintained at a lower temperature than the thermovoltaic element .
- Various techniques to maintain this temperature difference may be used including for instance, insulation and direct cooling.
- the electromagnetic radiation may be solar radiation.
- other sources of electromagnetic radiation may be utilised.
- an electrical distribution system comprising the apparatus described above together with any one or more of: temperature sensor or sensors, a thermal control system and an electrical storage system.
- FIG. 1 shows a graph of an approximated solar spectrum
- FIG. 2 shows a schematic diagram of a cross section through a solar cell according an embodiment of the present invention, given by way of example only.
- FIG. 2 shows a solar cell 10 according to one embodiment.
- the solar cell 10 is formed as a stacked arrangement and shall now be described layerwise starting with the first layer that is encountered by incident solar radiation falling on the solar cell 10 from above (as shown in figure 2), in use.
- a transparent protective cover 30 is formed over the surface of the solar cell 10.
- the next layer is a vacuum layer 40, which provides thermal insulation between the transparent protective cover 30 and the electrically active components beneath. Vacuum seals (not shown in figure 2) are used to maintain the vacuum.
- Under the vacuum layer 40 is a thermovoltaic (TV) element comprising a p-type semiconductor layer 50, an n- type semiconductor layer 60 and a single crystalline substrate 70.
- TV thermovoltaic
- the TV element is preferably transparent to the visible, near-UV and/or UV portion of the solar spectrum.
- the interface between the p-type and n-type semiconductor layers acts as a hot junction 55 of the TV element.
- the interface between the n-type semiconductor layer 60 and the single crystalline substrate 70 acts as a cold junction 65 of the TV element.
- the p- type semiconductor layer 50 may be dyed with an IR absorber such as for instance: organic dyes, this may include but not limited to Solvent Soluble Near Infrared Dyes, Water Soluble Near
- This IR absorber may coat the p-type (or n-type) semiconductor layer 50 or be incorporated throughout it.
- Each element of the TV layer may preferably be manufactured from a semiconductor material that is substantially transparent at least to visible or near-UV radiation. Suitable transparent materials include n-ZnO, p- CuAlO, CuYi- X Ca x O 2 , YZn 1 - X Al x O, LiNbO 3 , Ga 2 O 3 , CuInTe 2 or CuInGaSe 2 but others may be used.
- the single crystalline substrate 70 is kept cold by a heat sink 80 (or heat radiator) .
- the heat sink 80 extends sideways beyond the solar cell 10 stack and may be bonded to the single crystalline substrate 70 by In solder 90, or any other method that provides high thermal conductivity of the joint.
- a second vacuum layer 100 provides additional optional thermal insulation between the TV element and a photovoltaic (PV) element below.
- PV photovoltaic
- vacuum seals may be used to maintain the vacuum.
- the PV element may be of any suitable type and may preferably be efficient when exposed to the visible, near-UV and/or UV wavelengths of incident solar radiation.
- Semiconductor p-type layer 110 and n-type layer 120 form the PV element and operate in a way known in the art of PV cells.
- the lower layer 120 of the PV element may optionally be kept cool by a further heat sink 130 or heat radiator.
- the heat sink 103 may extend across the entire back surface of the solar cell 10 as this layer does not need to be transparent.
- the PV element may be bonded to heat sink 130 in any suitable way such as, for instance, by In soldering or bonded with high thermal conductivity resin. From the point of view of electrical efficiency the two elements (TV and PV) represent two different voltage/current sources. They can thus have different source parameters, namely open-loop voltages, short-circuit currents and internal resistances among others.
- Several solar cells 10 may be connected together in a battery arrangement in order to increase the source voltage and/or current .
- the solar cell 10 may be used to generate electricity where an efficient source of power is required.
- Space vehicle and satellite applications particularly benefit from the combined high efficiency nature of the device and its high power to weight or size ratio. In space applications a requirement of maintaining sealed vacuum chambers may also be removed leading to further weight reductions. Other vehicle or portable device applications may also benefit from this device.
- the TV and PV elements may be of any suitable type.
- the TV element layers do not necessarily have to be semiconductors.
- Metals, oxides, conductive polymers, organic materials and/or other conductors may be used.
- the hot junction should preferably be at the top (as shown in figure 2) , i.e. towards the incident solar radiation, and the cold junction at the bottom. Placing the cold junction between the hot junction and PV element has a benefit of reducing the effect of radiation heating the PV element, which may unnecessarily occur if the hot junction is facing or adjacent the PV element .
- the TV and PV elements may abut without any insulation or separation.
- the TV element may instead be formed from a single oxide layer. Areas of different type (p for n-type substrate and n for p-type substrate) may be formed by, but not exclusively, with the help of diffusion, ion beam implantation.
- a TV element may be located on the backside of the solar cell .
- the TV element may comprise one or more thermoelectric devices, such as thermoelectric modules for example.
- thermoelectric devices such as thermoelectric modules for example.
- suitable thermoelectric devices may comprise thermoelectric materials such as filled skutterdites, chlathrate structured compounds, fine grain sized thermoelectric materials, and film shaped thermoelectric materials, ZnO, Carbon nanotube composites, for example.
- the thermoelectric devices may comprise single stage devices, or multistage cascade structures, for example.
- the thermoelectric devices may also comprise thin-film thermoelectric materials, or may be thermoelectric devices comprising organic or polymer thermoelectric materials.
- the PV element may comprise one or more photovoltaic devices. Any suitable type of photovoltaic device may be used, and suitable photovoltaic devices may comprise materials such as conventional crystalline silicon, thin film silicon, amorphous silicon, gallium arsenide and other semiconductor materials. Suitable photovoltaic devices also include single junction or multi-junction solar cells, and dye-doped solar cells based on titanium dioxide using any carbon based materials such as, but not restricted, to carbon nanotubes, graphite, Highly ordered pyrolytic graphite (HOPG), graphene and carbon nanofibers. Suitable photovoltaic devices also include photovoltaic materials such as ceramic-based semiconductors, polymeric or polymeric hybrid materials.
- the photovoltaic devices may also include optics such as concentrator lenses and mirrors, antireflective coatings, textured cell surfaces, metamaterials and back reflectors.
- optics such as concentrator lenses and mirrors, antireflective coatings, textured cell surfaces, metamaterials and back reflectors.
- the PV and TV elements may be manufactured by a variety of methods including vacuum deposition, screen printing and spaying onto a substrate, for example.
- the PV and/or TV elements may be formed from inorganic (e.g. Si, Ge or AlGas) or organic (e.g. polyaniline, tetrathiotetracene (TTT) iodides) materials.
- inorganic e.g. Si, Ge or AlGas
- organic e.g. polyaniline, tetrathiotetracene (TTT) iodides
- the PV and TV elements may be formed as separate or a single layer.
- the origin of electromagnetic radiation is not restricted to the sun but other emitters of electromagnetic radiation such as thermal emitters and atomic batteries, for example.
- the wavelength of the electromagnetic radiation is not limited to the visible spectrum but may for instance extend into the ultraviolet or infrared spectrum.
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP08737091A EP2150990A2 (de) | 2007-04-25 | 2008-04-23 | Solarzelle |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0708030.2 | 2007-04-25 | ||
GBGB0708030.2A GB0708030D0 (en) | 2007-04-25 | 2007-04-25 | Solar cell |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2008132445A2 true WO2008132445A2 (en) | 2008-11-06 |
WO2008132445A3 WO2008132445A3 (en) | 2009-05-07 |
Family
ID=38170681
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/GB2008/001436 WO2008132445A2 (en) | 2007-04-25 | 2008-04-23 | Solar cell |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP2150990A2 (de) |
GB (1) | GB0708030D0 (de) |
WO (1) | WO2008132445A2 (de) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7858876B2 (en) | 2007-03-13 | 2010-12-28 | Wisconsin Alumni Research Foundation | Graphite-based photovoltaic cells |
CN102180437A (zh) * | 2010-12-07 | 2011-09-14 | 中国科学技术大学 | 基于石墨烯的红外机敏透明薄膜器件的制备方法及其器件 |
FR2958453A1 (fr) * | 2010-04-02 | 2011-10-07 | Commissariat Energie Atomique | Dispositif de generation de courant a base d'energie solaire a rendement optimise. |
US20110290295A1 (en) * | 2010-05-28 | 2011-12-01 | Guardian Industries Corp. | Thermoelectric/solar cell hybrid coupled via vacuum insulated glazing unit, and method of making the same |
WO2012134807A2 (en) | 2011-03-29 | 2012-10-04 | California Institute Of Technology | Graphene-based multi-junctions flexible solar cell |
DE102012107100A1 (de) * | 2012-08-02 | 2014-02-06 | Dynamic Solar Systems Inc. | Verbesserte Schichtsolarzelle |
RU2515214C2 (ru) * | 2009-08-11 | 2014-05-10 | Айвьютек Ко., Лтд | Электронное устройство |
CN103026503B (zh) * | 2010-05-28 | 2016-11-30 | 葛迪恩实业公司 | 通过真空绝热玻璃单元耦合的热电/太阳能电池混合动力及其方法 |
EP2634817A4 (de) * | 2010-10-29 | 2017-06-07 | Stanley Electric Co., Ltd. | Stromerzeugungsvorrichtung, wärmeerzeugungsverfahren und solarstromerzeugungsverfahren |
WO2019096343A1 (de) | 2017-11-20 | 2019-05-23 | Bpe E.K. | Foto-thermogenerator |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4500741A (en) * | 1982-06-04 | 1985-02-19 | Futaba Denshi Kogyo K.K. | Energy conversion element |
US4710588A (en) * | 1986-10-06 | 1987-12-01 | Hughes Aircraft Company | Combined photovoltaic-thermoelectric solar cell and solar cell array |
US5936193A (en) * | 1997-05-09 | 1999-08-10 | Parise; Ronald J. | Nighttime solar cell |
-
2007
- 2007-04-25 GB GBGB0708030.2A patent/GB0708030D0/en not_active Ceased
-
2008
- 2008-04-23 WO PCT/GB2008/001436 patent/WO2008132445A2/en active Application Filing
- 2008-04-23 EP EP08737091A patent/EP2150990A2/de not_active Withdrawn
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4500741A (en) * | 1982-06-04 | 1985-02-19 | Futaba Denshi Kogyo K.K. | Energy conversion element |
US4710588A (en) * | 1986-10-06 | 1987-12-01 | Hughes Aircraft Company | Combined photovoltaic-thermoelectric solar cell and solar cell array |
US5936193A (en) * | 1997-05-09 | 1999-08-10 | Parise; Ronald J. | Nighttime solar cell |
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7858876B2 (en) | 2007-03-13 | 2010-12-28 | Wisconsin Alumni Research Foundation | Graphite-based photovoltaic cells |
RU2515214C2 (ru) * | 2009-08-11 | 2014-05-10 | Айвьютек Ко., Лтд | Электронное устройство |
FR2958453A1 (fr) * | 2010-04-02 | 2011-10-07 | Commissariat Energie Atomique | Dispositif de generation de courant a base d'energie solaire a rendement optimise. |
US20110290295A1 (en) * | 2010-05-28 | 2011-12-01 | Guardian Industries Corp. | Thermoelectric/solar cell hybrid coupled via vacuum insulated glazing unit, and method of making the same |
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CN103477448B (zh) * | 2011-03-29 | 2016-11-09 | 加州理工学院 | 基于石墨烯的多结柔性太阳能电池 |
CN103477448A (zh) * | 2011-03-29 | 2013-12-25 | 加州理工学院 | 基于石墨烯的多结柔性太阳能电池 |
WO2012134807A2 (en) | 2011-03-29 | 2012-10-04 | California Institute Of Technology | Graphene-based multi-junctions flexible solar cell |
DE102012107100A1 (de) * | 2012-08-02 | 2014-02-06 | Dynamic Solar Systems Inc. | Verbesserte Schichtsolarzelle |
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DE102017127267A1 (de) * | 2017-11-20 | 2019-05-23 | Bpe E.K. | Foto-Thermogenerator |
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GB0708030D0 (en) | 2007-06-06 |
EP2150990A2 (de) | 2010-02-10 |
WO2008132445A3 (en) | 2009-05-07 |
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