WO2008129891A1 - Composition for etching and method of etching - Google Patents
Composition for etching and method of etching Download PDFInfo
- Publication number
- WO2008129891A1 WO2008129891A1 PCT/JP2008/051873 JP2008051873W WO2008129891A1 WO 2008129891 A1 WO2008129891 A1 WO 2008129891A1 JP 2008051873 W JP2008051873 W JP 2008051873W WO 2008129891 A1 WO2008129891 A1 WO 2008129891A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- etching
- composition
- ruthenium
- foul
- chlorine
- Prior art date
Links
- 238000005530 etching Methods 0.000 title abstract 5
- 238000000034 method Methods 0.000 title abstract 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 abstract 2
- 229910052707 ruthenium Inorganic materials 0.000 abstract 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 abstract 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 abstract 1
- 239000003513 alkali Substances 0.000 abstract 1
- 229910052801 chlorine Inorganic materials 0.000 abstract 1
- 239000000460 chlorine Substances 0.000 abstract 1
- 229910052731 fluorine Inorganic materials 0.000 abstract 1
- 239000011737 fluorine Substances 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/30—Acidic compositions for etching other metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/32—Alkaline compositions
- C23F1/40—Alkaline compositions for etching other metallic material
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- ing And Chemical Polishing (AREA)
Abstract
A composition for etching which does not foul the apparatus, is inexpensive, contains no strong alkali, and can etch ruthenium; and a method of etching with the composition. The composition for ruthenium etching is characterized by comprising chlorine and water, containing no fluorine, and having a pH lower than 12.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007-105720 | 2007-04-13 | ||
JP2007105720 | 2007-04-13 | ||
JP2007148025A JP2008280605A (en) | 2006-12-21 | 2007-06-04 | Composition for etching and method of etching |
JP2007-148025 | 2007-06-04 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2008129891A1 true WO2008129891A1 (en) | 2008-10-30 |
Family
ID=39875421
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/051873 WO2008129891A1 (en) | 2007-04-13 | 2008-02-05 | Composition for etching and method of etching |
Country Status (1)
Country | Link |
---|---|
WO (1) | WO2008129891A1 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3926663A4 (en) * | 2019-02-13 | 2022-12-21 | Tokuyama Corporation | Semiconductor wafer treatment liquid containing hypochlorite ions and ph buffer |
EP3926662A4 (en) * | 2019-02-13 | 2023-01-11 | Tokuyama Corporation | Onium salt-containing processing solution for semiconductor wafers |
US12024663B2 (en) | 2019-02-13 | 2024-07-02 | Tokuyama Corporation | Onium salt-containing treatment liquid for semiconductor wafers |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000315670A (en) * | 1999-04-30 | 2000-11-14 | Nec Corp | Cleaning method of semiconductor substrate |
JP2001237389A (en) * | 2000-02-24 | 2001-08-31 | Nec Corp | Method of manufacturing semiconductor device |
JP2001240985A (en) * | 1999-12-20 | 2001-09-04 | Hitachi Ltd | Treatment method and treating liquid for solid surface and method for manufacturing electronic device using the same |
JP2002016053A (en) * | 2000-06-28 | 2002-01-18 | Hitachi Ltd | Method of manufacturing semiconductor device |
JP2007009331A (en) * | 2005-06-28 | 2007-01-18 | Lg Philips Lcd Co Ltd | Etching composition, and manufacturing method of array substrate for liquid crystal display device |
-
2008
- 2008-02-05 WO PCT/JP2008/051873 patent/WO2008129891A1/en active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000315670A (en) * | 1999-04-30 | 2000-11-14 | Nec Corp | Cleaning method of semiconductor substrate |
JP2001240985A (en) * | 1999-12-20 | 2001-09-04 | Hitachi Ltd | Treatment method and treating liquid for solid surface and method for manufacturing electronic device using the same |
JP2001237389A (en) * | 2000-02-24 | 2001-08-31 | Nec Corp | Method of manufacturing semiconductor device |
JP2002016053A (en) * | 2000-06-28 | 2002-01-18 | Hitachi Ltd | Method of manufacturing semiconductor device |
JP2007009331A (en) * | 2005-06-28 | 2007-01-18 | Lg Philips Lcd Co Ltd | Etching composition, and manufacturing method of array substrate for liquid crystal display device |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3926663A4 (en) * | 2019-02-13 | 2022-12-21 | Tokuyama Corporation | Semiconductor wafer treatment liquid containing hypochlorite ions and ph buffer |
EP3926662A4 (en) * | 2019-02-13 | 2023-01-11 | Tokuyama Corporation | Onium salt-containing processing solution for semiconductor wafers |
US12024663B2 (en) | 2019-02-13 | 2024-07-02 | Tokuyama Corporation | Onium salt-containing treatment liquid for semiconductor wafers |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2005123982A3 (en) | Method and apparatus for scale and biofilm control | |
HK1123520A1 (en) | Membrane distillation process and membrane distillation device | |
WO2004071996A3 (en) | Carbon sequestration in aqueous environments | |
WO2008137782A3 (en) | Compositions including magnesium ion, calcium ion, and silicate or carbonate and methods employing them to reduce corrosion and etch | |
WO2009031642A1 (en) | Pharmaceutical composition | |
TW200702928A (en) | Composition for underlayer film of resist and process for producing the same | |
WO2008138601A3 (en) | Disinfectant based on aqueous, hypochlorous acid (hocl)-containing solutions, method for the production thereof, and use thereof | |
EP1921095A4 (en) | Method for producing polyvinyl acetal resin | |
WO2006091770A3 (en) | Rosuvastatin and salts thereof free of rosuvastatin alkylether and a process for the preparation thereof | |
UA102178C2 (en) | Fungicidal composition | |
WO2007022519A3 (en) | Steerable heart implants for congestive heart failure | |
WO2007100531A3 (en) | Chlorine dioxide based cleaner/sanitizer | |
WO2006100312A3 (en) | Process for producing a chlorhydrin from a multihydroxylated aliphatic hydrocarbon and/or ester thereof in the presence of metal salts | |
TW200736369A (en) | Highly selective doped oxide etchant | |
ZA200501649B (en) | Process for making a fluoroelastomer. | |
WO2008112073A3 (en) | Color changing soap | |
WO2007011845A3 (en) | Use of a bacillus meti gene to improve methionine production in microorganisms | |
WO2008051826A3 (en) | Purines as pkc-theta inhibitors | |
WO2004027840A3 (en) | Process for etching silicon wafers | |
WO2006130786A3 (en) | Water treatment system and process | |
WO2002080671A1 (en) | Bactericide for use in water treatment, method for water treatment and apparatus for water treatment | |
WO2007077587A3 (en) | Membrane electrolytic reactors system with four chambers | |
EP1852190A3 (en) | Foam device | |
AU2003238253A1 (en) | Acid etching mixture having reduced water content | |
MX2009011238A (en) | Method for making a gas from an aqueous fluid, product of the method, and apparatus therefor. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 08710805 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1020097014802 Country of ref document: KR |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 08710805 Country of ref document: EP Kind code of ref document: A1 |