WO2008123233A1 - Radiation-sensitive resin composition, active matrix substrate and method for producing the same - Google Patents

Radiation-sensitive resin composition, active matrix substrate and method for producing the same Download PDF

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Publication number
WO2008123233A1
WO2008123233A1 PCT/JP2008/055537 JP2008055537W WO2008123233A1 WO 2008123233 A1 WO2008123233 A1 WO 2008123233A1 JP 2008055537 W JP2008055537 W JP 2008055537W WO 2008123233 A1 WO2008123233 A1 WO 2008123233A1
Authority
WO
WIPO (PCT)
Prior art keywords
radiation
resin composition
active matrix
matrix substrate
sensitive resin
Prior art date
Application number
PCT/JP2008/055537
Other languages
French (fr)
Japanese (ja)
Inventor
Takeyoshi Kato
Makoto Fujimura
Azusa Wada
Yumi Osaku
Original Assignee
Zeon Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zeon Corporation filed Critical Zeon Corporation
Publication of WO2008123233A1 publication Critical patent/WO2008123233A1/en

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Compositions Of Macromolecular Compounds (AREA)

Abstract

Disclosed is an active matrix substrate having high reliability and high luminance. Also disclosed are a radiation-sensitive resin composition for obtaining such an active matrix substrate, and a method for efficiently producing such an active matrix substrate using the radiation-sensitive resin composition. Specifically disclosed is a radiation-sensitive resin composition containing a binder resin (A), a radiation-sensitive compound (B), a heterocyclic compound (C) and an organic solvent (D). The heterocyclic compound (C) contains, as a ring constituting atom, at least one heteroatom selected from the group consisting of an nitrogen atom, a sulfur atom and an oxygen atom, and at least two acidic groups are bonded to the heterocyclic ring. The acidic groups are preferably hydroxy groups, carboxy groups, thiol groups or carboxymethylenethio groups.
PCT/JP2008/055537 2007-03-30 2008-03-25 Radiation-sensitive resin composition, active matrix substrate and method for producing the same WO2008123233A1 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007095148 2007-03-30
JP2007-095148 2007-03-30
JP2007317422 2007-12-07
JP2007-317422 2007-12-07

Publications (1)

Publication Number Publication Date
WO2008123233A1 true WO2008123233A1 (en) 2008-10-16

Family

ID=39830726

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/055537 WO2008123233A1 (en) 2007-03-30 2008-03-25 Radiation-sensitive resin composition, active matrix substrate and method for producing the same

Country Status (2)

Country Link
TW (1) TW200905391A (en)
WO (1) WO2008123233A1 (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010153772A (en) * 2008-11-21 2010-07-08 Ricoh Co Ltd Thin film transistor active substrate, production process for thin film transistor active substrate and electrophoresis display
JP2010199390A (en) * 2009-02-26 2010-09-09 Nippon Zeon Co Ltd Method of manufacturing thin film transistor, thin film transistor, and display device
JP2011075609A (en) * 2009-09-29 2011-04-14 Nippon Zeon Co Ltd Radiation sensitive resin composition and laminated body
JP2011123477A (en) * 2009-11-10 2011-06-23 Sony Chemical & Information Device Corp Photosensitive polyimide resin composition, flexible printed wiring board and method for manufacturing the same
JP2011253035A (en) * 2010-06-02 2011-12-15 Toray Ind Inc Photosensitive siloxane composition, cured film formed from the same, and element having cured film
JP2012032729A (en) * 2010-08-03 2012-02-16 Nof Corp Photosensitive resin composition and usage of the same
JP2019062113A (en) * 2017-09-27 2019-04-18 日立化成株式会社 Manufacturing method of wiring layer
CN116041235A (en) * 2023-01-10 2023-05-02 阜阳欣奕华材料科技有限公司 Thiol-modified fluorene resin oligomer, method for producing same, photosensitive resin composition, color filter, and image display device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011040324A1 (en) * 2009-09-29 2011-04-07 日本ゼオン株式会社 Semiconductor element substrate

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05158240A (en) * 1991-12-06 1993-06-25 Toyo Ink Mfg Co Ltd Photo solder resist composition
JP2001330962A (en) * 2000-05-18 2001-11-30 Toray Ind Inc Photosensitive polymer composition
JP2002220409A (en) * 2001-01-29 2002-08-09 Showa Denko Kk Photopolymerizable composition, dry film and method for producing printed wiring board using them
JP2006241224A (en) * 2005-03-01 2006-09-14 Osaka Gas Co Ltd Alkali-soluble resin
JP2006307155A (en) * 2005-03-30 2006-11-09 Nippon Zeon Co Ltd Radiation-sensitive resin composition and method for preparing the same, laminate and method for producing the same, and active matrix substrate and flat display having the same
JP2007017959A (en) * 2005-06-07 2007-01-25 Asahi Kasei Electronics Co Ltd Positive photosensitive resin composition

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05158240A (en) * 1991-12-06 1993-06-25 Toyo Ink Mfg Co Ltd Photo solder resist composition
JP2001330962A (en) * 2000-05-18 2001-11-30 Toray Ind Inc Photosensitive polymer composition
JP2002220409A (en) * 2001-01-29 2002-08-09 Showa Denko Kk Photopolymerizable composition, dry film and method for producing printed wiring board using them
JP2006241224A (en) * 2005-03-01 2006-09-14 Osaka Gas Co Ltd Alkali-soluble resin
JP2006307155A (en) * 2005-03-30 2006-11-09 Nippon Zeon Co Ltd Radiation-sensitive resin composition and method for preparing the same, laminate and method for producing the same, and active matrix substrate and flat display having the same
JP2007017959A (en) * 2005-06-07 2007-01-25 Asahi Kasei Electronics Co Ltd Positive photosensitive resin composition

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010153772A (en) * 2008-11-21 2010-07-08 Ricoh Co Ltd Thin film transistor active substrate, production process for thin film transistor active substrate and electrophoresis display
JP2010199390A (en) * 2009-02-26 2010-09-09 Nippon Zeon Co Ltd Method of manufacturing thin film transistor, thin film transistor, and display device
JP2011075609A (en) * 2009-09-29 2011-04-14 Nippon Zeon Co Ltd Radiation sensitive resin composition and laminated body
JP2011123477A (en) * 2009-11-10 2011-06-23 Sony Chemical & Information Device Corp Photosensitive polyimide resin composition, flexible printed wiring board and method for manufacturing the same
JP2011253035A (en) * 2010-06-02 2011-12-15 Toray Ind Inc Photosensitive siloxane composition, cured film formed from the same, and element having cured film
JP2012032729A (en) * 2010-08-03 2012-02-16 Nof Corp Photosensitive resin composition and usage of the same
JP2019062113A (en) * 2017-09-27 2019-04-18 日立化成株式会社 Manufacturing method of wiring layer
JP2022164707A (en) * 2017-09-27 2022-10-27 昭和電工マテリアルズ株式会社 Manufacturing method of wiring layer
CN116041235A (en) * 2023-01-10 2023-05-02 阜阳欣奕华材料科技有限公司 Thiol-modified fluorene resin oligomer, method for producing same, photosensitive resin composition, color filter, and image display device
CN116041235B (en) * 2023-01-10 2024-05-14 阜阳欣奕华材料科技有限公司 Thiol-modified fluorene resin oligomer, method for producing same, photosensitive resin composition, color filter, and image display device

Also Published As

Publication number Publication date
TW200905391A (en) 2009-02-01

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