WO2008120743A1 - Resist composition, resist protective film composition, and method for forming resist pattern - Google Patents
Resist composition, resist protective film composition, and method for forming resist pattern Download PDFInfo
- Publication number
- WO2008120743A1 WO2008120743A1 PCT/JP2008/056170 JP2008056170W WO2008120743A1 WO 2008120743 A1 WO2008120743 A1 WO 2008120743A1 JP 2008056170 W JP2008056170 W JP 2008056170W WO 2008120743 A1 WO2008120743 A1 WO 2008120743A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- resist
- composition
- protective film
- forming
- hydrogen atom
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F36/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, at least one having two or more carbon-to-carbon double bonds
- C08F36/02—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, at least one having two or more carbon-to-carbon double bonds the radical having only two carbon-to-carbon double bonds
- C08F36/20—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, at least one having two or more carbon-to-carbon double bonds the radical having only two carbon-to-carbon double bonds unconjugated
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Disclosed is a resist composition. Specifically disclosed is a resist composition containing a polymer (PA) having a repeating unit (A) which is formed by polymerizing a compound represented by the following formula: CF2=CFCF2C(XA)(C(O)OZA)(CH2)naCRA=CHRA. (In the formula, XA represents a hydrogen atom, a cyano group or a group represented by the following formula: -C(O)OZA; ZA represents a hydrogen atom or a monovalent organic group having 1-20 carbon atoms; na represents 0, 1 or 2; and RA represents a hydrogen atom or a monovalent organic group having 1-20 carbon atoms, and two RA's may be the same as or different from each other.)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007093222 | 2007-03-30 | ||
JP2007-093222 | 2007-03-30 | ||
JP2007-261186 | 2007-10-04 | ||
JP2007261186A JP2010139518A (en) | 2007-03-30 | 2007-10-04 | Resist polymer |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2008120743A1 true WO2008120743A1 (en) | 2008-10-09 |
Family
ID=39808323
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/056170 WO2008120743A1 (en) | 2007-03-30 | 2008-03-28 | Resist composition, resist protective film composition, and method for forming resist pattern |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP2010139518A (en) |
TW (1) | TW200910003A (en) |
WO (1) | WO2008120743A1 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5439154B2 (en) * | 2009-12-15 | 2014-03-12 | 東京応化工業株式会社 | Positive resist composition and resist pattern forming method |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000511192A (en) * | 1996-05-28 | 2000-08-29 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | Partially fluorinated polymer |
JP2005060664A (en) * | 2003-07-31 | 2005-03-10 | Asahi Glass Co Ltd | Fluorine containing compound, fluorine containing polymer and production process for the same, and resist composition containing the same |
JP2005298707A (en) * | 2004-04-14 | 2005-10-27 | Asahi Glass Co Ltd | Fluoropolymer and resist composition |
JP2007056134A (en) * | 2005-08-24 | 2007-03-08 | Asahi Glass Co Ltd | Resist-protecting film |
-
2007
- 2007-10-04 JP JP2007261186A patent/JP2010139518A/en active Pending
-
2008
- 2008-03-28 TW TW97111618A patent/TW200910003A/en unknown
- 2008-03-28 WO PCT/JP2008/056170 patent/WO2008120743A1/en active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000511192A (en) * | 1996-05-28 | 2000-08-29 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | Partially fluorinated polymer |
JP2005060664A (en) * | 2003-07-31 | 2005-03-10 | Asahi Glass Co Ltd | Fluorine containing compound, fluorine containing polymer and production process for the same, and resist composition containing the same |
JP2005298707A (en) * | 2004-04-14 | 2005-10-27 | Asahi Glass Co Ltd | Fluoropolymer and resist composition |
JP2007056134A (en) * | 2005-08-24 | 2007-03-08 | Asahi Glass Co Ltd | Resist-protecting film |
Non-Patent Citations (1)
Title |
---|
SASAKI T. ET AL.: "A new monocyclic fluoropolymer for 157-nm photoresists", JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY, vol. 17, no. 4, 2004, pages 639 - 644, XP008117910, DOI: doi:10.2494/photopolymer.17.639 * |
Also Published As
Publication number | Publication date |
---|---|
JP2010139518A (en) | 2010-06-24 |
TW200910003A (en) | 2009-03-01 |
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