WO2008120308A1 - Amplification circuit - Google Patents

Amplification circuit Download PDF

Info

Publication number
WO2008120308A1
WO2008120308A1 PCT/JP2007/056625 JP2007056625W WO2008120308A1 WO 2008120308 A1 WO2008120308 A1 WO 2008120308A1 JP 2007056625 W JP2007056625 W JP 2007056625W WO 2008120308 A1 WO2008120308 A1 WO 2008120308A1
Authority
WO
WIPO (PCT)
Prior art keywords
amplification circuit
field effect
effect transistor
drain
impedance circuit
Prior art date
Application number
PCT/JP2007/056625
Other languages
French (fr)
Japanese (ja)
Inventor
Hiroshi Yamazaki
Original Assignee
Fujitsu Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Limited filed Critical Fujitsu Limited
Priority to PCT/JP2007/056625 priority Critical patent/WO2008120308A1/en
Publication of WO2008120308A1 publication Critical patent/WO2008120308A1/en

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

An amplification circuit comprising a first field effect transistor (101) which is gate-grounded, a load impedance circuit (Zd) which is connected to a drain of the first field effect transistor, and a feedback impedance circuit (Zf) which is connected between the drain and a source of the first field effect transistor.
PCT/JP2007/056625 2007-03-28 2007-03-28 Amplification circuit WO2008120308A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/056625 WO2008120308A1 (en) 2007-03-28 2007-03-28 Amplification circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/056625 WO2008120308A1 (en) 2007-03-28 2007-03-28 Amplification circuit

Publications (1)

Publication Number Publication Date
WO2008120308A1 true WO2008120308A1 (en) 2008-10-09

Family

ID=39807901

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/056625 WO2008120308A1 (en) 2007-03-28 2007-03-28 Amplification circuit

Country Status (1)

Country Link
WO (1) WO2008120308A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014513902A (en) * 2011-05-13 2014-06-05 クゥアルコム・インコーポレイテッド Positive feedback common gate low noise amplifier

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06252668A (en) * 1993-02-22 1994-09-09 Teratetsuku:Kk Microwave circuit
JP2000059154A (en) * 1998-08-05 2000-02-25 Nf Corp High-dielectric-strength amplifying device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06252668A (en) * 1993-02-22 1994-09-09 Teratetsuku:Kk Microwave circuit
JP2000059154A (en) * 1998-08-05 2000-02-25 Nf Corp High-dielectric-strength amplifying device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014513902A (en) * 2011-05-13 2014-06-05 クゥアルコム・インコーポレイテッド Positive feedback common gate low noise amplifier

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